WO2005029547A2 - Enhancing the width of polycrystalline grains with mask - Google Patents
Enhancing the width of polycrystalline grains with mask Download PDFInfo
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- WO2005029547A2 WO2005029547A2 PCT/US2004/030326 US2004030326W WO2005029547A2 WO 2005029547 A2 WO2005029547 A2 WO 2005029547A2 US 2004030326 W US2004030326 W US 2004030326W WO 2005029547 A2 WO2005029547 A2 WO 2005029547A2
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- 230000002708 enhancing effect Effects 0.000 title abstract description 3
- 238000000034 method Methods 0.000 claims abstract description 32
- 230000000873 masking effect Effects 0.000 claims abstract description 19
- 239000010432 diamond Substances 0.000 claims abstract description 12
- 229910003460 diamond Inorganic materials 0.000 claims abstract description 10
- 239000010409 thin film Substances 0.000 claims description 28
- 239000000155 melt Substances 0.000 claims description 5
- 230000008023 solidification Effects 0.000 abstract description 6
- 238000007711 solidification Methods 0.000 abstract description 6
- 238000002425 crystallisation Methods 0.000 abstract description 5
- 230000008025 crystallization Effects 0.000 abstract description 5
- 230000005855 radiation Effects 0.000 description 11
- 238000013519 translation Methods 0.000 description 10
- 230000014616 translation Effects 0.000 description 10
- 239000010408 film Substances 0.000 description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 230000033001 locomotion Effects 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 239000013078 crystal Substances 0.000 description 3
- 230000001419 dependent effect Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 230000008018 melting Effects 0.000 description 3
- 238000002844 melting Methods 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 230000004075 alteration Effects 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- -1 e.g. Substances 0.000 description 1
- 239000010438 granite Substances 0.000 description 1
- 230000003116 impacting effect Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02664—Aftertreatments
- H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
- H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
- H01L21/02678—Beam shaping, e.g. using a mask
- H01L21/0268—Shape of mask
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
- B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
- B23K26/064—Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms
- B23K26/066—Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms by using masks
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02532—Silicon, silicon germanium, germanium
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02664—Aftertreatments
- H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
- H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
- H01L21/02686—Pulsed laser beam
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02664—Aftertreatments
- H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
- H01L21/02691—Scanning of a beam
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
- H01L27/127—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement
- H01L27/1274—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement using crystallisation of amorphous semiconductor or recrystallisation of crystalline semiconductor
- H01L27/1285—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement using crystallisation of amorphous semiconductor or recrystallisation of crystalline semiconductor using control of the annealing or irradiation parameters, e.g. using different scanning direction or intensity for different transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
- H01L27/1296—Multistep manufacturing methods adapted to increase the uniformity of device parameters
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/04—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10S117/903—Dendrite or web or cage technique
- Y10S117/904—Laser beam
Definitions
- the present invention relates to semiconductor processing techniques, and more particularly, techniques for fabricating semiconductors suitable for use as thin-film transistor (“TFT”) devices.
- TFT thin-film transistor
- SLS sequential lateral solidification
- such system preferably includes an excimer laser 110, an energy density modulator 120 to rapidly change the energy density of a laser beam 111, a beam attenuator and shutter 130, optics 140, 141, 142 and 143, a beam homogenizer 144, a lens and beam steering system 145, 148, a masking system 150, another lens and beam steering system 161, 162, 163, an incident laser pulse 164, a thin film sample on a substrate 170 (e.g., a silicon thin film) a sample translation stage 180, a granite block 190, a support system 191, 192, 193, 194, 195, 196, and a computer 100 which manages X and Y direction translations and microtranslations of the film sample and substrate 170.
- a substrate 170 e.g., a silicon thin film
- the computer 100 directs such translations and/or microtranslations by either a movement of a mask within masking system 150 or by a movement of the sample translation stage 180.
- the sample 170 may be translated with respect to the laser beam 149, either by moving the masking system 150 or the sample translation stage 180, in order to grow crystal regions in the sample 170.
- Fig. 2 depicts the mask used in the continuous motion SLS process as described in
- This mask is divided into a first mask section 20 and a second mask section 22.
- the first mask section 20 can be used for the first pass under the laser.
- the second mask section 22 is used on the second pass.
- the first mask section 20 may have corresponding opaque areas 24 and clear areas 25.
- opaque areas are referred to as areas of the mask that prevent associated regions of a thin film sample irradiated by beams passed through the mask from being completely melted throughout its thickness
- clear areas are areas of the mask that permit associated regions of a thin film sample irradiated by beams passed through the mask to be completely melted throughout its thickness.
- the clear areas can be actual holes in the mask or may be sections of the mask that allow the sample behind it to be completely melted throughout its thickness.
- the second mask section 22 also has corresponding opaque areas 26 and clear areas 27.
- the opaque areas 24, 26 of both sections 20, 22 are areas that prevent radiation from a laser source from passing through to the sample.
- the shape of these clear areas, both in the second mask section 22 and in the first mask section 20, generally have a shape of "straight slits.”
- the array of the clear areas 24 in the first mask section 20 are generally staggered from the array of clear areas 26 in the second mask section 22.
- the clear areas 25, 27 of both sections allows radiation to pass through to melt the sample below the surface of the mask.
- Fig. 3 depicts the radiation pattern passing through the mask of Fig. 2 during processing of the film.
- the first pattern section 30 shows the pattern that results after the first pass of the irradiation by the pulses shaped using the mask.
- the pulse passing through the mask may have a first portion 34 that corresponds to the pattern of the first mask section 20.
- the second pattern section 32 of Fig. 3 with the radiation pattern results after the second pass of processing the sample.
- the pulse passing through the mask may have a second portion 36 that corresponds to the pattern of the second mask section 22.
- the clear areas of the second mask section 22 of the mask in Fig. 2 allow the radiation to pass therethrough, and again melt the thin film throughout its thickness. This results in a second melted region and an unmelted region over the grain boundary 45 (see Fig. 4).
- the first structure section 40 includes the structure 41 that results after the first pass of the sample processing.
- the opaque areas of the first mask section 20 of the mask of Fig. 2 prevent the associated regions 44 from completely melting.
- a grain boundary 45 in the direction of the crystalline structure forms approximately halfway between the associated regions 44.
- the second structure section 42 includes the crystalline structure 48 that results after the second pass of the sample processing.
- the grain boundary 45 from the first pass is not removed, while the individual grains expand in length until they meet one another, because all areas are exposed to the laser during the second pass except the area that corresponds to the grain boundary 45.
- the grain length 46 (parallel to the direction of the crystalline structure) may be controlled by the properties and slit patterns of the mask of Fig. 2.
- the width 47 of the grain (perpendicular to the direction of the crystalline structure), however, is not very easily controlled. Indeed, it may be primarily dependent on the characteristics of the film.
- the aforementioned SLS techniques typically employ a straight slit mask pattern. This allows for the ease of control of the grain length (in the direction of the primary crystallization). In such case, the perpendicular grain spacing may be dependent on the properties of the film, and thus is not very easily manipulated.
- the present invention overcomes the above-mentioned problems by providing a mask having a row of point-type areas (e.g., diamond and/or dot patterned opaque regions) provided thereon.
- point-type areas e.g., diamond and/or dot patterned opaque regions
- Such mask pattern that uses closely spaced circular or diamond-shaped areas is utilized in lieu of the straight slits in at least a portion of the mask in order to produce a microstructure with wider grain areas.
- Using the mask of this configuration according to the present invention advantageously affects a melt interface curvature on the evolution of grain boundaries to favorably increase the perpendicular grain boundary spacing.
- a masking arrangement, system and process are provided for processing a thin film sample, e.g., an amorphous silicon thin film, into a polycrystalline thin film.
- a mask can be utilized which includes a first section having at least one opaque areas arranged in a first pattern, e.g., diamond areas, oval areas, and/or round areas.
- the first section may be configured to receive a beam pulse thereon, and produce a first modified pulse when the beam pulse is passed therethrough.
- the first modified pulse may include at least one first portion having a pattern that corresponds to the first pattern of the first section. When the first portion is irradiated on the sample, at least one first region of the sample is prevented from being completely melted throughout its thickness.
- the mask may also includes a second section associated with the first section, with the second section including a further area arranged in a second pattern.
- the second section may be configured to receive a further beam pulse thereon, and produce a second modified pulse when the further beam pulse is passed therethrough.
- the second modified pulse can include at least one second portion having a pattern that corresponds to the second pattern of the second section. When the second portion is irradiated on the sample, at least one second region of the sample irradiated by the second portion is completely melted throughout its thickness. In addition, when the first region is irradiated by the second modified pulse, the second portion of the second modified pulse completely melts the first region throughout its thickness.
- Fig. 1 is a functional diagram of a conventional system for performing semiconductor processing including sequential lateral solidification of a thin film
- Fig. 2 is a top view of a conventional mask
- Fig. 3 is a schematic top view showing the radiation pattern associated with the mask of Fig.
- Fig. 4 is a schematic top view showing grain spacing in the processed thin film that results from use of the mask of Fig. 2;
- Fig. 5 is a top view of a mask according to an exemplary embodiment according to the present invention;
- Fig. 6 is a top view of an irradiation pattern generated by the mask of Fig. 5;
- Fig. 7 is a top view of a grain spacing produced by the mask of Fig. 5;
- Fig. 8 is a top view of a mask according to an exemplary embodiment according to the present invention;
- Fig. 9 is a top view of a grain spacing produced by the mask of Fig. 8;
- Fig. 10 is a flow diagram illustrating the steps according to the present invention implemented by the system of Fig. 1.
- the systems, methods, and masks according to the present invention are applicable not only to single-shot motion SLS processes and systems, but also to thin films that have been processed with n-shot and 2n-shot SLS techniques.
- the mask which may be used in an exemplary embodiment of the present invention may be divided into a first mask section 50 and a second mask section 52. Alternatively, two separate masks may be used instead of separate sections in one mask.
- the first mask section 50 may be used to process a selected area of the thin film as an initial shot.
- the second mask section 52 may be used as a second shot which immediately follows the first shot.
- the first mask section 50 may have corresponding opaque areas 54 and clear areas 55.
- the second mask section 52 may also have corresponding opaque areas 56 and clear areas 57. While the shape of these opaque areas in the second mask section 52 may be in the shape of traditional "straight slits" as described herein above in Figs. 2-4, the opaque areas in the first mask section 50 are preferably provided in rows of diamonds, circular shaped, and/or oval shaped areas.
- the array of opaque areas 54 in the first mask section may be staggered from the array of opaque areas 56 in the second mask section.
- Fig. 6 depicts the radiation pattern that may be shaped by the mask of Fig. 5 upon passing a beam pulse therethrough.
- the first pattern section 60 includes the pattern that may result upon the first shaped pulse impacting the corresponding portions on the sample.
- a pulse shaped by the mask may have a first portion 64 that corresponds to the pattern of the first mask section 50.
- the opaque mask areas 54 of the first mask section 50 in Fig. 5 may block the radiation from passing through to the thin film sample, and thus result in a first unmelted region 74 in the first pass (see Fig. 7).
- the grains grow outwardly from the unirradiated areas because they seed the melted regions upon the resolidification of the melted areas.
- the width of the resolidified regions is based on the grain growth into two opposite directions. This is because the grains grow outward from the unmelted regions, e.g., in the opposite directions thereof.
- Parallel grain boundaries 75 as shown in Fig.
- the second pattern section 62 of Fig. 6 shows the radiation pattern that may result after the second shot irradiates the corresponding portions of the thin film.
- a pulse passing through the mask may have a second portion 66 that corresponds to the pattern of the second mask section 52.
- the first stmcture section 70 includes a stmcture 71 that may be produced after irradiation thereof by the first beam pulse.
- the opaque areas of the first section of the mask of Fig. 5 prevent the associated regions 74 from completely melting.
- a parallel grain boundary 75 as well as a perpendicular grain boundary 73 may be formed approximately halfway between the associated regions 74.
- the second stmcture section 72 includes a crystalline structure that may be formed after the i ⁇ adiation by the second beam pulse.
- the crystal grained structures in this section 72 may grow radially outward from the associated regions 74.
- the parallel grain boundary 75 as well as the perpendicular grain boundary 73 produced by the irradiation with the first pulse may remain in tact while the sample is exposed to the second beam pulse shaped by the second section 52 of the mask.
- the grain length 76 parallel to the direction of the crystalline stmcture
- the grain width 77 perpendicular to the direction of the crystalline structure
- the grain width 77 formed using the embodiment of the mask according to the present invention may be wider than the grain width 47 formed with a straight slit mask pattern, and can be controlled using the mask pattern.
- a mask that may be used in an exemplary embodiment of the present invention may be divided into a first mask section 80 and a second mask section 82. Alternatively, two separate masks may be used instead of separate sections in one mask.
- the first mask section 80 may be used to process a selected area of the thin film as an initial shot.
- the second mask section 82 may be used as a second shot which immediately follows the first shot.
- the first mask section 80 may have corresponding opaque areas 84 and clear areas 85.
- the second mask section 82 may also have corresponding opaque areas 86 and clear areas 87.
- the shape of the opaque areas may be in both the first and second mask section may be any shape as described herein above in Figs. 2-4.
- the opaque areas in the first mask section 85 are preferably provided in rows of diamonds, circular shaped, dot shaped and/or oval shaped areas.
- the opaque areas of both the first and second mask sections are dots.
- the array of opaque areas 84 in the first mask section maybe staggered from the array of opaque areas 86 in the second mask section.
- Fig. 9 depicts the resulting crystalline stmcture that may develop using the mask of Fig. 8.
- the first stmcture section 90 includes a stmcture 91 that may be produced after irradiation thereof by the first beam pulse.
- the opaque areas of the first section of the mask of Fig. 8 prevent the associated regions 94 from completely melting.
- a parallel grain boundary 95 as well as a perpendicular grain boundary 93 may be formed approximately halfway between the associated regions 94. crostmctures.
- the opaque areas of the second section 86 may be located on the edge of two islands grown from regions produced by the first pulse.
- the opaque areas of the second section 86 may be located on the comer of four islands grown from opaque areas of the first region 84. Referring next to Fig.
- Fig. 8 is a flow diagram illustrating the basic steps implemented in the system of Fig. 1.
- the various electronics of the system shown in Fig. 1 may be initialized 1000 by the computer to initiate the process.
- a thin film sample e.g., a silicon thin film, may then be loaded onto the sample translation stage 1005. It should be noted that such loading may be either manual or robotically implemented under the control of computer 100.
- the sample translation stage may be moved into an initial position 1015, which may include an alignment with respect to reference features on the sample.
- the various optical components of the system may be focused 1020 if necessary.
- the laser may then be stabilized 1025 to a desired energy level and repetition rate, as needed to fully melt the sample in accordance with the particular processing to be carried out. If necessary, the attenuation of the laser pulses may be finely adjusted
- the shutter maybe opened 1035 to expose the sample to a single pulse of irradiation through a masking arrangement including at least one of diamond shaped areas, oval shaped areas, and round shaped areas, and accordingly, to commence the sequential lateral solidification process.
- the sample may be translated in the horizontal direction 1040.
- the shutter is again opened 1045 exposing previously unmelted regions to a single pulse of irradiation.
- the process of sample translation and irradiation 1040, 1045 may be repeated 1060 to grow the polycrystalline region.
Abstract
Description
Claims
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
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US11/373,773 US7638728B2 (en) | 2003-09-16 | 2006-03-10 | Enhancing the width of polycrystalline grains with mask |
US12/644,273 US8063338B2 (en) | 2003-09-16 | 2009-12-22 | Enhancing the width of polycrystalline grains with mask |
US13/273,687 US20120034794A1 (en) | 2003-09-16 | 2011-10-14 | Enhancing the width of polycrystalline grains with mask |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
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US50343703P | 2003-09-16 | 2003-09-16 | |
US60/503,437 | 2003-09-16 |
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US11/373,773 Continuation US7638728B2 (en) | 2003-09-16 | 2006-03-10 | Enhancing the width of polycrystalline grains with mask |
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WO2005029547A2 true WO2005029547A2 (en) | 2005-03-31 |
WO2005029547A3 WO2005029547A3 (en) | 2005-07-14 |
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PCT/US2004/030326 WO2005029547A2 (en) | 2003-09-16 | 2004-09-16 | Enhancing the width of polycrystalline grains with mask |
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US (3) | US7638728B2 (en) |
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007027737A (en) * | 2005-07-12 | 2007-02-01 | Samsung Sdi Co Ltd | Manufacturing method of polycrystalline silicon thin film and manufacturing method of mask pattern used in the same, and of flat plate display device using the same |
Families Citing this family (31)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6555449B1 (en) | 1996-05-28 | 2003-04-29 | Trustees Of Columbia University In The City Of New York | Methods for producing uniform large-grained and grain boundary location manipulated polycrystalline thin film semiconductors using sequential lateral solidfication |
AU2003258289A1 (en) | 2002-08-19 | 2004-03-03 | The Trustees Of Columbia University In The City Of New York | A single-shot semiconductor processing system and method having various irradiation patterns |
JP4873858B2 (en) | 2002-08-19 | 2012-02-08 | ザ トラスティーズ オブ コロンビア ユニヴァーシティ イン ザ シティ オブ ニューヨーク | Method and apparatus for laser crystallization processing of film region of substrate and structure of such film region to minimize edge region |
WO2004075263A2 (en) * | 2003-02-19 | 2004-09-02 | The Trustees Of Columbia University In The City Of New York | System and process for processing a plurality of semiconductor thin films which are crystallized using sequential lateral solidification techniques |
TWI359441B (en) * | 2003-09-16 | 2012-03-01 | Univ Columbia | Processes and systems for laser crystallization pr |
WO2005029546A2 (en) | 2003-09-16 | 2005-03-31 | The Trustees Of Columbia University In The City Of New York | Method and system for providing a continuous motion sequential lateral solidification for reducing or eliminating artifacts, and a mask for facilitating such artifact reduction/elimination |
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Also Published As
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US8063338B2 (en) | 2011-11-22 |
US20120034794A1 (en) | 2012-02-09 |
US20070012664A1 (en) | 2007-01-18 |
WO2005029547A3 (en) | 2005-07-14 |
TWI366859B (en) | 2012-06-21 |
TW200523987A (en) | 2005-07-16 |
US7638728B2 (en) | 2009-12-29 |
US20100099273A1 (en) | 2010-04-22 |
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