WO2005024900A3 - Bipolar transistor having raised extrinsic base with selectable self-alignment and methods of forming same - Google Patents

Bipolar transistor having raised extrinsic base with selectable self-alignment and methods of forming same Download PDF

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Publication number
WO2005024900A3
WO2005024900A3 PCT/US2004/021345 US2004021345W WO2005024900A3 WO 2005024900 A3 WO2005024900 A3 WO 2005024900A3 US 2004021345 W US2004021345 W US 2004021345W WO 2005024900 A3 WO2005024900 A3 WO 2005024900A3
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WO
WIPO (PCT)
Prior art keywords
extrinsic base
alignment
bipolar transistor
base layer
methods
Prior art date
Application number
PCT/US2004/021345
Other languages
French (fr)
Other versions
WO2005024900A2 (en
Inventor
Marwan H Khater
James S Dunn
David L Harame
Alvin J Joseph
Qizhi Liu
Francois Pagette
Onge Stephen A St
Andreas D Stricker
Original Assignee
Ibm
Marwan H Khater
James S Dunn
David L Harame
Alvin J Joseph
Qizhi Liu
Francois Pagette
Onge Stephen A St
Andreas D Stricker
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ibm, Marwan H Khater, James S Dunn, David L Harame, Alvin J Joseph, Qizhi Liu, Francois Pagette, Onge Stephen A St, Andreas D Stricker filed Critical Ibm
Priority to JP2006524633A priority Critical patent/JP4979380B2/en
Priority to EP04777467A priority patent/EP1658639A4/en
Publication of WO2005024900A2 publication Critical patent/WO2005024900A2/en
Publication of WO2005024900A3 publication Critical patent/WO2005024900A3/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66234—Bipolar junction transistors [BJT]
    • H01L29/66272—Silicon vertical transistors
    • H01L29/66287—Silicon vertical transistors with a single crystalline emitter, collector or base including extrinsic, link or graft base formed on the silicon substrate, e.g. by epitaxy, recrystallisation, after insulating device isolation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/1004—Base region of bipolar transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66234—Bipolar junction transistors [BJT]
    • H01L29/66242—Heterojunction transistors [HBT]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73—Bipolar junction transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73—Bipolar junction transistors
    • H01L29/732—Vertical transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73—Bipolar junction transistors
    • H01L29/737—Hetero-junction transistors
    • H01L29/7371—Vertical transistors
    • H01L29/7378—Vertical transistors comprising lattice mismatched active layers, e.g. SiGe strained layer transistors

Abstract

A bipolar transistor with raised extrinsic base and selectable self-alignment between the extrinsic base and the emitter (106) is disclosed. The fabrication method may include the formation of a predefined thickness of a first extrinsic base layer (102) of polysilicon or silicon on an intrinsic base (108). A dielectric landing pad (128) is then formed by lithography on the first extrinsic base layer (102). Next, a second extrinsic base layer (104) of polysilicon or silicon is formed on top of the dielectric landing pad (128) to finalize the raised extrinsic base total thickness. An emitter (106) opening is formed using lithography and RIE, where the second extrinsic base layer (104) is etched stopping on the dielectric landing pad (128). The degree of self-alignment between the emitter (106) and the raised extrinsic base is achieved by selecting the first extrinsic base layer (102) thickness, the dielectric landing pad (128) width, and the spacer width.
PCT/US2004/021345 2003-08-29 2004-07-01 Bipolar transistor having raised extrinsic base with selectable self-alignment and methods of forming same WO2005024900A2 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2006524633A JP4979380B2 (en) 2003-08-29 2004-07-01 Bipolar transistor having raised extrinsic base with selectable self-alignment and method of forming the same
EP04777467A EP1658639A4 (en) 2003-08-29 2004-07-01 Bipolar transistor having raised extrinsic base with selectable self-alignment and methods of forming same

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/604,988 US7002221B2 (en) 2003-08-29 2003-08-29 Bipolar transistor having raised extrinsic base with selectable self-alignment and methods of forming same
US10/604,988 2003-08-29

Publications (2)

Publication Number Publication Date
WO2005024900A2 WO2005024900A2 (en) 2005-03-17
WO2005024900A3 true WO2005024900A3 (en) 2005-06-09

Family

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Family Applications (1)

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PCT/US2004/021345 WO2005024900A2 (en) 2003-08-29 2004-07-01 Bipolar transistor having raised extrinsic base with selectable self-alignment and methods of forming same

Country Status (6)

Country Link
US (2) US7002221B2 (en)
EP (1) EP1658639A4 (en)
JP (1) JP4979380B2 (en)
KR (1) KR100810019B1 (en)
CN (1) CN100459120C (en)
WO (1) WO2005024900A2 (en)

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US7341920B2 (en) * 2005-07-06 2008-03-11 International Business Machines Corporation Method for forming a bipolar transistor device with self-aligned raised extrinsic base
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US7892910B2 (en) * 2007-02-28 2011-02-22 International Business Machines Corporation Bipolar transistor with raised extrinsic self-aligned base using selective epitaxial growth for BiCMOS integration
US7927958B1 (en) * 2007-05-15 2011-04-19 National Semiconductor Corporation System and method for providing a self aligned bipolar transistor using a silicon nitride ring
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US8492237B2 (en) * 2011-03-08 2013-07-23 International Business Machines Corporation Methods of fabricating a bipolar junction transistor with a self-aligned emitter and base
US8536012B2 (en) 2011-07-06 2013-09-17 International Business Machines Corporation Bipolar junction transistors with a link region connecting the intrinsic and extrinsic bases
CN102931079A (en) * 2011-08-09 2013-02-13 上海华虹Nec电子有限公司 Method for manufacturing germanium-silicon heterojunction bipolar transistor (SiGe-HBT)
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US8921195B2 (en) * 2012-10-26 2014-12-30 International Business Machines Corporation Isolation scheme for bipolar transistors in BiCMOS technology
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Also Published As

Publication number Publication date
JP2007504647A (en) 2007-03-01
US7002221B2 (en) 2006-02-21
CN100459120C (en) 2009-02-04
US20050048735A1 (en) 2005-03-03
US20060081934A1 (en) 2006-04-20
KR100810019B1 (en) 2008-03-07
EP1658639A4 (en) 2009-09-30
JP4979380B2 (en) 2012-07-18
CN1868061A (en) 2006-11-22
US7253096B2 (en) 2007-08-07
EP1658639A2 (en) 2006-05-24
WO2005024900A2 (en) 2005-03-17
KR20060039443A (en) 2006-05-08

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