WO2005022663A8 - Organisches elektronisches bauteil mit hochaufgelöster struk­turierung und herstellungsverfahren dazu - Google Patents

Organisches elektronisches bauteil mit hochaufgelöster struk­turierung und herstellungsverfahren dazu

Info

Publication number
WO2005022663A8
WO2005022663A8 PCT/DE2004/001816 DE2004001816W WO2005022663A8 WO 2005022663 A8 WO2005022663 A8 WO 2005022663A8 DE 2004001816 W DE2004001816 W DE 2004001816W WO 2005022663 A8 WO2005022663 A8 WO 2005022663A8
Authority
WO
WIPO (PCT)
Prior art keywords
production
electronic component
high resolution
organic electronic
resolution structuring
Prior art date
Application number
PCT/DE2004/001816
Other languages
English (en)
French (fr)
Other versions
WO2005022663A1 (de
Inventor
Walter Fix
Ronan Martin
Andreas Ullmann
Original Assignee
Polyic Gmbh & Co Kg
Walter Fix
Ronan Martin
Andreas Ullmann
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Polyic Gmbh & Co Kg, Walter Fix, Ronan Martin, Andreas Ullmann filed Critical Polyic Gmbh & Co Kg
Priority to AT04762661T priority Critical patent/ATE450057T1/de
Priority to JP2006524214A priority patent/JP2007503712A/ja
Priority to EP04762661A priority patent/EP1658648B1/de
Priority to US10/569,763 priority patent/US7479670B2/en
Priority to DE502004010430T priority patent/DE502004010430D1/de
Publication of WO2005022663A1 publication Critical patent/WO2005022663A1/de
Publication of WO2005022663A8 publication Critical patent/WO2005022663A8/de

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/60—Forming conductive regions or layers, e.g. electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having a potential-jump barrier or a surface barrier
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/468—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics
    • H10K10/471—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics the gate dielectric comprising only organic materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having a potential-jump barrier or a surface barrier
    • H10K10/80—Constructional details
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating
    • H10K71/13—Deposition of organic active material using liquid deposition, e.g. spin coating using printing techniques, e.g. ink-jet printing or screen printing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/18—Deposition of organic active material using non-liquid printing techniques, e.g. thermal transfer printing from a donor sheet

Abstract

Die Erfindung betrifft ein elektronisches Bauteil aus vorwie­gend organischen Materialien mit hochaufgelöster Strukturie­rung, insbesondere einen organischen Feld-Effekt-Transistor (OFET) mit kleinem Source-Drain-Abstand und ein Herstellungs­ verfahren dazu. Das organische elektronische Bauteil hat Ver­tiefungen und/oder modifizierte Bereiche, in denen die Lei­terbahnen/Elektroden, die beispielsweise metallisch sein kön­nen, angeordnet sind und die bei der Herstellung mittels La­ser hergestellt wurden.
PCT/DE2004/001816 2003-08-25 2004-08-14 Organisches elektronisches bauteil mit hochaufgelöster struk­turierung und herstellungsverfahren dazu WO2005022663A1 (de)

Priority Applications (5)

Application Number Priority Date Filing Date Title
AT04762661T ATE450057T1 (de) 2003-08-25 2004-08-14 Herstellungsverfahren für ein organisches elektronisches bauteil mit hochaufgelöster strukturierung
JP2006524214A JP2007503712A (ja) 2003-08-25 2004-08-14 高解像度構造を有する有機電子部品及びその生産方法
EP04762661A EP1658648B1 (de) 2003-08-25 2004-08-14 Herstellungsverfahren für ein organisches elektronisches bauteil mit hochaufgelöster strukturierung
US10/569,763 US7479670B2 (en) 2003-08-25 2004-08-14 Organic electronic component with high resolution structuring, and method of the production thereof
DE502004010430T DE502004010430D1 (de) 2003-08-25 2004-08-14 Isches bauteil mit hochaufgelöster strukturierung

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE10339036A DE10339036A1 (de) 2003-08-25 2003-08-25 Organisches elektronisches Bauteil mit hochaufgelöster Strukturierung und Herstellungsverfahren dazu
DE10339036.7 2003-08-25

Publications (2)

Publication Number Publication Date
WO2005022663A1 WO2005022663A1 (de) 2005-03-10
WO2005022663A8 true WO2005022663A8 (de) 2005-06-02

Family

ID=34223146

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/DE2004/001816 WO2005022663A1 (de) 2003-08-25 2004-08-14 Organisches elektronisches bauteil mit hochaufgelöster struk­turierung und herstellungsverfahren dazu

Country Status (7)

Country Link
US (1) US7479670B2 (de)
EP (1) EP1658648B1 (de)
JP (1) JP2007503712A (de)
CN (1) CN1853289A (de)
AT (1) ATE450057T1 (de)
DE (2) DE10339036A1 (de)
WO (1) WO2005022663A1 (de)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102005031448A1 (de) 2005-07-04 2007-01-11 Polyic Gmbh & Co. Kg Aktivierbare optische Schicht
DE102010042503A1 (de) 2010-10-15 2012-04-19 Siemens Aktiengesellschaft Lasersystem zur Bearbeitung von Oberflächen sowie entsprechendes Verfahren
DE102017116540A1 (de) * 2017-07-21 2019-01-24 Osram Oled Gmbh Organisches elektronisches Bauelement und Verfahren zur Herstellung eines organischen elektronischen Bauelements
AT17082U1 (de) * 2020-04-27 2021-05-15 Zkw Group Gmbh Verfahren zur befestigung eines elektronischen bauteils

Family Cites Families (106)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3512052A (en) 1968-01-11 1970-05-12 Gen Motors Corp Metal-insulator-semiconductor voltage variable capacitor with controlled resistivity dielectric
US3769096A (en) 1971-03-12 1973-10-30 Bell Telephone Labor Inc Pyroelectric devices
JPS543594B2 (de) 1973-10-12 1979-02-24
DE2407110C3 (de) 1974-02-14 1981-04-23 Siemens AG, 1000 Berlin und 8000 München Sensor zum Nachweis einer in einem Gas oder einer Flüssigkeit einthaltenen Substanz
JPS54101176A (en) 1978-01-26 1979-08-09 Shinetsu Polymer Co Contact member for push switch
US4442019A (en) 1978-05-26 1984-04-10 Marks Alvin M Electroordered dipole suspension
US4246298A (en) 1979-03-14 1981-01-20 American Can Company Rapid curing of epoxy resin coating compositions by combination of photoinitiation and controlled heat application
US4340057A (en) 1980-12-24 1982-07-20 S. C. Johnson & Son, Inc. Radiation induced graft polymerization
US4554229A (en) 1984-04-06 1985-11-19 At&T Technologies, Inc. Multilayer hybrid integrated circuit
DE3768112D1 (de) 1986-03-03 1991-04-04 Toshiba Kawasaki Kk Strahlungsdetektor.
GB2215307B (en) 1988-03-04 1991-10-09 Unisys Corp Electronic component transportation container
US5364735A (en) 1988-07-01 1994-11-15 Sony Corporation Multiple layer optical record medium with protective layers and method for producing same
US4937119A (en) 1988-12-15 1990-06-26 Hoechst Celanese Corp. Textured organic optical data storage media and methods of preparation
US5892244A (en) 1989-01-10 1999-04-06 Mitsubishi Denki Kabushiki Kaisha Field effect transistor including πconjugate polymer and liquid crystal display including the field effect transistor
US6331356B1 (en) 1989-05-26 2001-12-18 International Business Machines Corporation Patterns of electrically conducting polymers and their application as electrodes or electrical contacts
FI84862C (fi) 1989-08-11 1992-01-27 Vaisala Oy Kapacitiv fuktighetsgivarkonstruktion och foerfarande foer framstaellning daerav.
US5206525A (en) 1989-12-27 1993-04-27 Nippon Petrochemicals Co., Ltd. Electric element capable of controlling the electric conductivity of π-conjugated macromolecular materials
FR2664430B1 (fr) 1990-07-04 1992-09-18 Centre Nat Rech Scient Transistor a effet de champ en couche mince de structure mis, dont l'isolant et le semiconducteur sont realises en materiaux organiques.
FR2673041A1 (fr) 1991-02-19 1992-08-21 Gemplus Card Int Procede de fabrication de micromodules de circuit integre et micromodule correspondant.
US5408109A (en) 1991-02-27 1995-04-18 The Regents Of The University Of California Visible light emitting diodes fabricated from soluble semiconducting polymers
JPH0580530A (ja) 1991-09-24 1993-04-02 Hitachi Ltd 薄膜パターン製造方法
US5173835A (en) 1991-10-15 1992-12-22 Motorola, Inc. Voltage variable capacitor
US5486851A (en) 1991-10-30 1996-01-23 Fraunhofer-Gesellschaft Zur Forderung Der Angewandten Forschung E.V. Illumination device using a pulsed laser source a Schlieren optical system and a matrix addressable surface light modulator for producing images with undifracted light
JP2709223B2 (ja) 1992-01-30 1998-02-04 三菱電機株式会社 非接触形携帯記憶装置
JP3457348B2 (ja) 1993-01-15 2003-10-14 株式会社東芝 半導体装置の製造方法
FR2701117B1 (fr) 1993-02-04 1995-03-10 Asulab Sa Système de mesures électrochimiques à capteur multizones, et son application au dosage du glucose.
US5567550A (en) 1993-03-25 1996-10-22 Texas Instruments Incorporated Method of making a mask for making integrated circuits
JPH0722669A (ja) 1993-07-01 1995-01-24 Mitsubishi Electric Corp 可塑性機能素子
EP0722563A4 (de) 1993-08-24 1998-03-04 Metrika Lab Inc Neues elektronisches einweg-assaygerät
JP3153682B2 (ja) 1993-08-26 2001-04-09 松下電工株式会社 回路板の製造方法
JP3460863B2 (ja) 1993-09-17 2003-10-27 三菱電機株式会社 半導体装置の製造方法
FR2710413B1 (fr) 1993-09-21 1995-11-03 Asulab Sa Dispositif de mesure pour capteurs amovibles.
US5556706A (en) 1993-10-06 1996-09-17 Matsushita Electric Industrial Co., Ltd. Conductive layered product and method of manufacturing the same
JP4392057B2 (ja) 1994-05-16 2009-12-24 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ 有機半導体物質を有する半導体装置
JP3246189B2 (ja) 1994-06-28 2002-01-15 株式会社日立製作所 半導体表示装置
US5574291A (en) 1994-12-09 1996-11-12 Lucent Technologies Inc. Article comprising a thin film transistor with low conductivity organic layer
US5630986A (en) 1995-01-13 1997-05-20 Bayer Corporation Dispensing instrument for fluid monitoring sensors
JP3068430B2 (ja) 1995-04-25 2000-07-24 富山日本電気株式会社 固体電解コンデンサ及びその製造方法
US5652645A (en) 1995-07-24 1997-07-29 Anvik Corporation High-throughput, high-resolution, projection patterning system for large, flexible, roll-fed, electronic-module substrates
US5625199A (en) 1996-01-16 1997-04-29 Lucent Technologies Inc. Article comprising complementary circuit with inorganic n-channel and organic p-channel thin film transistors
GB2310493B (en) 1996-02-26 2000-08-02 Unilever Plc Determination of the characteristics of fluid
JP3080579B2 (ja) * 1996-03-06 2000-08-28 富士機工電子株式会社 エアリア・グリッド・アレイ・パッケージの製造方法
DE19629656A1 (de) 1996-07-23 1998-01-29 Boehringer Mannheim Gmbh Diagnostischer Testträger mit mehrschichtigem Testfeld und Verfahren zur Bestimmung von Analyt mit dessen Hilfe
US5693956A (en) 1996-07-29 1997-12-02 Motorola Inverted oleds on hard plastic substrate
JPH10189579A (ja) * 1996-12-27 1998-07-21 Toshiba Corp 半導体装置の製造方法
US5946551A (en) 1997-03-25 1999-08-31 Dimitrakopoulos; Christos Dimitrios Fabrication of thin film effect transistor comprising an organic semiconductor and chemical solution deposited metal oxide gate dielectric
US6344662B1 (en) 1997-03-25 2002-02-05 International Business Machines Corporation Thin-film field-effect transistor with organic-inorganic hybrid semiconductor requiring low operating voltages
KR100248392B1 (ko) 1997-05-15 2000-09-01 정선종 유기물전계효과트랜지스터와결합된유기물능동구동전기발광소자및그소자의제작방법
EP0968537B1 (de) 1997-08-22 2012-05-02 Creator Technology B.V. Feld-effekt-transistor, der im wesentlichen aus organischen materialien besteht
DE02079791T1 (de) 1997-09-11 2004-04-15 Precision Dynamics Corp., San Fernando RF-ID Etikett mit einem integriertem Schaltkreis aus organischen Materialen
US6251513B1 (en) 1997-11-08 2001-06-26 Littlefuse, Inc. Polymer composites for overvoltage protection
JP2001510670A (ja) 1997-12-05 2001-07-31 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ 識別トランスポンダ
US5997817A (en) 1997-12-05 1999-12-07 Roche Diagnostics Corporation Electrochemical biosensor test strip
US5998805A (en) 1997-12-11 1999-12-07 Motorola, Inc. Active matrix OED array with improved OED cathode
US6083104A (en) 1998-01-16 2000-07-04 Silverlit Toys (U.S.A.), Inc. Programmable toy with an independent game cartridge
EP1051745B1 (de) 1998-01-28 2007-11-07 Thin Film Electronics ASA Methode zur herstellung zwei- oder dreidimensionaler elektrisch leitender oder halbleitender strukturen, eine löschmethode derselben und ein generator/modulator eines elektrischen feldes zum gebrauch in der herstellungsmethode
US6087196A (en) 1998-01-30 2000-07-11 The Trustees Of Princeton University Fabrication of organic semiconductor devices using ink jet printing
US6045977A (en) 1998-02-19 2000-04-04 Lucent Technologies Inc. Process for patterning conductive polyaniline films
US6033202A (en) 1998-03-27 2000-03-07 Lucent Technologies Inc. Mold for non - photolithographic fabrication of microstructures
DE69918308T2 (de) 1998-04-10 2004-10-21 E Ink Corp Elektronische anzeige basierend auf organischen feldeffekt-transistoren
GB9808061D0 (en) 1998-04-16 1998-06-17 Cambridge Display Tech Ltd Polymer devices
TW410478B (en) 1998-05-29 2000-11-01 Lucent Technologies Inc Thin-film transistor monolithically integrated with an organic light-emitting diode
US5967048A (en) 1998-06-12 1999-10-19 Howard A. Fromson Method and apparatus for the multiple imaging of a continuous web
KR100282393B1 (ko) * 1998-06-17 2001-02-15 구자홍 유기이엘(el)디스플레이소자제조방법
US6215130B1 (en) 1998-08-20 2001-04-10 Lucent Technologies Inc. Thin film transistors
US6330464B1 (en) 1998-08-26 2001-12-11 Sensors For Medicine & Science Optical-based sensing devices
US6384804B1 (en) 1998-11-25 2002-05-07 Lucent Techonologies Inc. Display comprising organic smart pixels
US6506438B2 (en) 1998-12-15 2003-01-14 E Ink Corporation Method for printing of transistor arrays on plastic substrates
US6321571B1 (en) 1998-12-21 2001-11-27 Corning Incorporated Method of making glass structures for flat panel displays
US6114088A (en) 1999-01-15 2000-09-05 3M Innovative Properties Company Thermal transfer element for forming multilayer devices
GB2347013A (en) 1999-02-16 2000-08-23 Sharp Kk Charge-transport structures
AU5646800A (en) 1999-03-02 2000-09-21 Helix Biopharma Corporation Card-based biosensor device
US6180956B1 (en) 1999-03-03 2001-01-30 International Business Machine Corp. Thin film transistors with organic-inorganic hybrid materials as semiconducting channels
US6207472B1 (en) 1999-03-09 2001-03-27 International Business Machines Corporation Low temperature thin film transistor fabrication
US6514801B1 (en) * 1999-03-30 2003-02-04 Seiko Epson Corporation Method for manufacturing thin-film transistor
US6498114B1 (en) 1999-04-09 2002-12-24 E Ink Corporation Method for forming a patterned semiconductor film
US6072716A (en) 1999-04-14 2000-06-06 Massachusetts Institute Of Technology Memory structures and methods of making same
US6383664B2 (en) 1999-05-11 2002-05-07 The Dow Chemical Company Electroluminescent or photocell device having protective packaging
US6593690B1 (en) 1999-09-03 2003-07-15 3M Innovative Properties Company Large area organic electronic devices having conducting polymer buffer layers and methods of making same
EP1085320A1 (de) 1999-09-13 2001-03-21 Interuniversitair Micro-Elektronica Centrum Vzw Vorrichtung auf Basis von organischem Material zur Erfassung eines Probenanalyts
US6517995B1 (en) 1999-09-14 2003-02-11 Massachusetts Institute Of Technology Fabrication of finely featured devices by liquid embossing
US6340822B1 (en) 1999-10-05 2002-01-22 Agere Systems Guardian Corp. Article comprising vertically nano-interconnected circuit devices and method for making the same
WO2001027998A1 (en) 1999-10-11 2001-04-19 Koninklijke Philips Electronics N.V. Integrated circuit
US6335539B1 (en) 1999-11-05 2002-01-01 International Business Machines Corporation Method for improving performance of organic semiconductors in bottom electrode structure
US6284562B1 (en) 1999-11-17 2001-09-04 Agere Systems Guardian Corp. Thin film transistors
US6621098B1 (en) 1999-11-29 2003-09-16 The Penn State Research Foundation Thin-film transistor and methods of manufacturing and incorporating a semiconducting organic material
US6197663B1 (en) 1999-12-07 2001-03-06 Lucent Technologies Inc. Process for fabricating integrated circuit devices having thin film transistors
KR100940110B1 (ko) 1999-12-21 2010-02-02 플라스틱 로직 리미티드 잉크젯으로 제조되는 집적회로 및 전자 디바이스 제조 방법
US6706159B2 (en) 2000-03-02 2004-03-16 Diabetes Diagnostics Combined lancet and electrochemical analyte-testing apparatus
TW497120B (en) 2000-03-06 2002-08-01 Toshiba Corp Transistor, semiconductor device and manufacturing method of semiconductor device
JP3690962B2 (ja) * 2000-04-26 2005-08-31 三井金属鉱業株式会社 キャリア箔付電解銅箔及びそのキャリア箔付電解銅箔の製造方法並びに銅張積層板
US6329226B1 (en) 2000-06-01 2001-12-11 Agere Systems Guardian Corp. Method for fabricating a thin-film transistor
DE10033112C2 (de) 2000-07-07 2002-11-14 Siemens Ag Verfahren zur Herstellung und Strukturierung organischer Feldeffekt-Transistoren (OFET), hiernach gefertigter OFET und seine Verwendung
DE10043204A1 (de) 2000-09-01 2002-04-04 Siemens Ag Organischer Feld-Effekt-Transistor, Verfahren zur Strukturierung eines OFETs und integrierte Schaltung
DE10045192A1 (de) 2000-09-13 2002-04-04 Siemens Ag Organischer Datenspeicher, RFID-Tag mit organischem Datenspeicher, Verwendung eines organischen Datenspeichers
KR20020036916A (ko) 2000-11-11 2002-05-17 주승기 실리콘 박막의 결정화 방법 및 이에 의해 제조된 반도체소자
KR100390522B1 (ko) 2000-12-01 2003-07-07 피티플러스(주) 결정질 실리콘 활성층을 포함하는 박막트랜지스터 제조 방법
DE10061297C2 (de) * 2000-12-08 2003-05-28 Siemens Ag Verfahren zur Sturkturierung eines OFETs
GB2371910A (en) * 2001-01-31 2002-08-07 Seiko Epson Corp Display devices
US6767807B2 (en) * 2001-03-02 2004-07-27 Fuji Photo Film Co., Ltd. Method for producing organic thin film device and transfer material used therein
US20020170897A1 (en) * 2001-05-21 2002-11-21 Hall Frank L. Methods for preparing ball grid array substrates via use of a laser
EP1393389B1 (de) * 2001-05-23 2018-12-05 Flexenable Limited Musterung von anordnungen mittels laser
US6870180B2 (en) 2001-06-08 2005-03-22 Lucent Technologies Inc. Organic polarizable gate transistor apparatus and method
US7351660B2 (en) 2001-09-28 2008-04-01 Hrl Laboratories, Llc Process for producing high performance interconnects
US6649327B2 (en) * 2001-10-25 2003-11-18 The United States Of America As Represented By The Secretary Of The Navy Method of patterning electrically conductive polymers
JP2006505927A (ja) * 2002-11-05 2006-02-16 ポリアイシー ゲーエムベーハー ウント コー、 カーゲー 高分解能の構造を有する有機電子要素およびそれを製造する方法

Also Published As

Publication number Publication date
US20070187671A1 (en) 2007-08-16
EP1658648B1 (de) 2009-11-25
ATE450057T1 (de) 2009-12-15
WO2005022663A1 (de) 2005-03-10
DE10339036A1 (de) 2005-03-31
EP1658648A1 (de) 2006-05-24
DE502004010430D1 (de) 2010-01-07
US7479670B2 (en) 2009-01-20
JP2007503712A (ja) 2007-02-22
CN1853289A (zh) 2006-10-25

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