WO2005022134A1 - 電界効果トランジスタ及び単一電子トランジスタ並びにそれを用いたセンサ - Google Patents
電界効果トランジスタ及び単一電子トランジスタ並びにそれを用いたセンサ Download PDFInfo
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- WO2005022134A1 WO2005022134A1 PCT/JP2004/012402 JP2004012402W WO2005022134A1 WO 2005022134 A1 WO2005022134 A1 WO 2005022134A1 JP 2004012402 W JP2004012402 W JP 2004012402W WO 2005022134 A1 WO2005022134 A1 WO 2005022134A1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
- G01N27/26—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating electrochemical variables; by using electrolysis or electrophoresis
- G01N27/403—Cells and electrode assemblies
- G01N27/414—Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS
- G01N27/4145—Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS specially adapted for biomolecules, e.g. gate electrode with immobilised receptors
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- B—PERFORMING OPERATIONS; TRANSPORTING
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- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
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- G01N27/403—Cells and electrode assemblies
- G01N27/414—Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS
- G01N27/4146—Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS involving nanosized elements, e.g. nanotubes, nanowires
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
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- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42364—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the insulating layer, e.g. thickness or uniformity
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
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- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/7613—Single electron transistors; Coulomb blockade devices
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
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Abstract
Description
Claims
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
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US10/570,279 US8502277B2 (en) | 2003-08-29 | 2004-08-27 | Field-effect transistor, single-electron transistor and sensor using the same |
EP04772358A EP1666873A4 (en) | 2003-08-29 | 2004-08-27 | FIELD EFFECT TRANSISTOR, SINGLE ELECTRONIC TRANSISTOR, AND SENSOR THEREFOR |
US13/556,314 US8772099B2 (en) | 2003-08-29 | 2012-07-24 | Method of use of a field-effect transistor, single-electron transistor and sensor |
US13/556,316 US8766326B2 (en) | 2003-08-29 | 2012-07-24 | Field-effect transistor, single-electron transistor and sensor |
US14/302,842 US9506892B2 (en) | 2003-08-29 | 2014-06-12 | Field-effect transistor, single-electron transistor and sensor using the same |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
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JP2003307798A JP4669213B2 (ja) | 2003-08-29 | 2003-08-29 | 電界効果トランジスタ及び単一電子トランジスタ並びにそれを用いたセンサ |
JP2003-307798 | 2003-08-29 |
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US13/556,316 Continuation US8766326B2 (en) | 2003-08-29 | 2012-07-24 | Field-effect transistor, single-electron transistor and sensor |
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US10/570,279 A-371-Of-International US8502277B2 (en) | 2003-08-29 | 2004-08-27 | Field-effect transistor, single-electron transistor and sensor using the same |
US13/556,316 Division US8766326B2 (en) | 2003-08-29 | 2012-07-24 | Field-effect transistor, single-electron transistor and sensor |
US13/556,314 Continuation US8772099B2 (en) | 2003-08-29 | 2012-07-24 | Method of use of a field-effect transistor, single-electron transistor and sensor |
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WO2005022134A1 true WO2005022134A1 (ja) | 2005-03-10 |
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US (4) | US8502277B2 (ja) |
EP (2) | EP2685251A3 (ja) |
JP (1) | JP4669213B2 (ja) |
KR (1) | KR100746863B1 (ja) |
CN (1) | CN100516854C (ja) |
TW (1) | TWI261114B (ja) |
WO (1) | WO2005022134A1 (ja) |
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WO2006103872A1 (ja) * | 2005-03-28 | 2006-10-05 | National University Corporation Hokkaido University | カーボンナノチューブ電界効果トランジスタ |
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TWI834132B (zh) | 2021-06-22 | 2024-03-01 | 高熹騰 | 具有流體裝置的感測晶片 |
Also Published As
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US20120286243A1 (en) | 2012-11-15 |
US20070063304A1 (en) | 2007-03-22 |
JP4669213B2 (ja) | 2011-04-13 |
TWI261114B (en) | 2006-09-01 |
JP2005079342A (ja) | 2005-03-24 |
KR20060036487A (ko) | 2006-04-28 |
EP1666873A4 (en) | 2011-10-26 |
US8766326B2 (en) | 2014-07-01 |
US20150102283A1 (en) | 2015-04-16 |
US8502277B2 (en) | 2013-08-06 |
EP1666873A1 (en) | 2006-06-07 |
US20120286763A1 (en) | 2012-11-15 |
EP2685251A3 (en) | 2014-03-05 |
CN1842704A (zh) | 2006-10-04 |
TW200519379A (en) | 2005-06-16 |
US9506892B2 (en) | 2016-11-29 |
KR100746863B1 (ko) | 2007-08-07 |
US8772099B2 (en) | 2014-07-08 |
EP2685251A2 (en) | 2014-01-15 |
CN100516854C (zh) | 2009-07-22 |
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