WO2005018005A1 - Semiconductor device including mosfet having band-engineered superlattice - Google Patents
Semiconductor device including mosfet having band-engineered superlattice Download PDFInfo
- Publication number
- WO2005018005A1 WO2005018005A1 PCT/US2004/020641 US2004020641W WO2005018005A1 WO 2005018005 A1 WO2005018005 A1 WO 2005018005A1 US 2004020641 W US2004020641 W US 2004020641W WO 2005018005 A1 WO2005018005 A1 WO 2005018005A1
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- WIPO (PCT)
- Prior art keywords
- semiconductor device
- superlattice
- semiconductor
- base semiconductor
- layer
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1025—Channel region of field-effect devices
- H01L29/1029—Channel region of field-effect devices of field-effect transistors
- H01L29/1033—Channel region of field-effect devices of field-effect transistors with insulated gate, e.g. characterised by the length, the width, the geometric contour or the doping structure
- H01L29/1054—Channel region of field-effect devices of field-effect transistors with insulated gate, e.g. characterised by the length, the width, the geometric contour or the doping structure with a variation of the composition, e.g. channel with strained layer for increasing the mobility
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/8238—Complementary field-effect transistors, e.g. CMOS
- H01L21/823807—Complementary field-effect transistors, e.g. CMOS with a particular manufacturing method of the channel structures, e.g. channel implants, halo or pocket implants, or channel materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/15—Structures with periodic or quasi periodic potential variation, e.g. multiple quantum wells, superlattices
- H01L29/151—Compositional structures
- H01L29/152—Compositional structures with quantum effects only in vertical direction, i.e. layered structures with quantum effects solely resulting from vertical potential variation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/15—Structures with periodic or quasi periodic potential variation, e.g. multiple quantum wells, superlattices
- H01L29/151—Compositional structures
- H01L29/152—Compositional structures with quantum effects only in vertical direction, i.e. layered structures with quantum effects solely resulting from vertical potential variation
- H01L29/155—Comprising only semiconductor materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7833—Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's
Abstract
Description
Claims
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
AU2004300982A AU2004300982B2 (en) | 2003-06-26 | 2004-06-28 | Semiconductor device including MOSFET having band-engineered superlattice |
CN2004800180935A CN1813355B (en) | 2003-06-26 | 2004-06-28 | Semiconductor device including mosfet having band-engineered superlattice |
JP2006515378A JP2007521648A (en) | 2003-06-26 | 2004-06-28 | Semiconductor device having MOSFET with band design superlattice |
CA2530065A CA2530065C (en) | 2003-06-26 | 2004-06-28 | Semiconductor device including mosfet having band-engineered superlattice |
EP04785968A EP1644983B1 (en) | 2003-06-26 | 2004-06-28 | Semiconductor device including mosfet having bandgap-engineered superlattice |
DE602004017472T DE602004017472D1 (en) | 2003-06-26 | 2004-06-28 | SEMICONDUCTOR COMPONENT WITH A MOSFET WITH BANDBAG ADJUSTED OVERGATE |
Applications Claiming Priority (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/603,696 US20040262594A1 (en) | 2003-06-26 | 2003-06-26 | Semiconductor structures having improved conductivity effective mass and methods for fabricating same |
US10/603,621 US20040266116A1 (en) | 2003-06-26 | 2003-06-26 | Methods of fabricating semiconductor structures having improved conductivity effective mass |
US10/603,621 | 2003-06-26 | ||
US10/603,696 | 2003-06-26 | ||
US10/647,069 US6897472B2 (en) | 2003-06-26 | 2003-08-22 | Semiconductor device including MOSFET having band-engineered superlattice |
US10/647,069 | 2003-08-22 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2005018005A1 true WO2005018005A1 (en) | 2005-02-24 |
Family
ID=34119859
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US2004/020641 WO2005018005A1 (en) | 2003-06-26 | 2004-06-28 | Semiconductor device including mosfet having band-engineered superlattice |
Country Status (6)
Country | Link |
---|---|
US (13) | US7279699B2 (en) |
EP (1) | EP1644983B1 (en) |
JP (1) | JP2007521648A (en) |
AU (1) | AU2004300982B2 (en) |
CA (1) | CA2530065C (en) |
WO (1) | WO2005018005A1 (en) |
Cited By (16)
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WO2006107735A2 (en) * | 2005-04-01 | 2006-10-12 | Mears Technologies, Inc. | Method for making a semiconductor device including a superlattice with regions defining a semiconductor junction |
WO2006107897A2 (en) * | 2005-04-01 | 2006-10-12 | Mears Technologies, Inc. | Semiconductor device including a superlattice and adjacent semiconductor layer with doped regions defining a semiconductor junction |
WO2006127291A2 (en) * | 2005-05-25 | 2006-11-30 | Mears Technologies, Inc. | Method for making a semiconductor device including a superlattice having at least one group of substantially undoped layers |
WO2006127225A2 (en) * | 2005-05-25 | 2006-11-30 | Mears Technologies, Inc. | Semiconductor device comprising a superlattice dielectric interface layer |
WO2006127269A2 (en) * | 2005-05-25 | 2006-11-30 | Mears Technologies, Inc. | Semiconductor device including a superlattice having at least one group of substantially undoped layer |
WO2007002043A1 (en) * | 2005-06-20 | 2007-01-04 | Mears Technologies, Inc. | Semiconductor device including shallow trench isolation (sti) regions with a superlattice therebetween and associated methods |
WO2007011628A1 (en) * | 2005-07-15 | 2007-01-25 | Mears Technologies, Inc. | Semiconductor device including a strained superlattice and overlying stress layer and related methods |
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US7514328B2 (en) | 2003-06-26 | 2009-04-07 | Mears Technologies, Inc. | Method for making a semiconductor device including shallow trench isolation (STI) regions with a superlattice therebetween |
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US20050032247A1 (en) | 2005-02-10 |
US20050087737A1 (en) | 2005-04-28 |
US7288457B2 (en) | 2007-10-30 |
US20050029510A1 (en) | 2005-02-10 |
US7435988B2 (en) | 2008-10-14 |
US20050184286A1 (en) | 2005-08-25 |
US20050110003A1 (en) | 2005-05-26 |
US20050173697A1 (en) | 2005-08-11 |
CA2530065A1 (en) | 2005-02-24 |
CA2530065C (en) | 2011-12-20 |
US7279699B2 (en) | 2007-10-09 |
AU2004300982B2 (en) | 2007-10-25 |
US20050173696A1 (en) | 2005-08-11 |
US7109052B2 (en) | 2006-09-19 |
EP1644983A1 (en) | 2006-04-12 |
US20050032260A1 (en) | 2005-02-10 |
US7446334B2 (en) | 2008-11-04 |
JP2007521648A (en) | 2007-08-02 |
AU2004300982A1 (en) | 2005-02-24 |
US20050029511A1 (en) | 2005-02-10 |
US20050029509A1 (en) | 2005-02-10 |
US20050090048A1 (en) | 2005-04-28 |
US7436026B2 (en) | 2008-10-14 |
US7265002B2 (en) | 2007-09-04 |
EP1644983B1 (en) | 2008-10-29 |
US20050118767A1 (en) | 2005-06-02 |
US7303948B2 (en) | 2007-12-04 |
US20050031247A1 (en) | 2005-02-10 |
US7279701B2 (en) | 2007-10-09 |
US7018900B2 (en) | 2006-03-28 |
US7432524B2 (en) | 2008-10-07 |
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