WO2005017959A3 - Integrated circuit with test pad structure and method of testing - Google Patents

Integrated circuit with test pad structure and method of testing Download PDF

Info

Publication number
WO2005017959A3
WO2005017959A3 PCT/US2004/022509 US2004022509W WO2005017959A3 WO 2005017959 A3 WO2005017959 A3 WO 2005017959A3 US 2004022509 W US2004022509 W US 2004022509W WO 2005017959 A3 WO2005017959 A3 WO 2005017959A3
Authority
WO
WIPO (PCT)
Prior art keywords
module
bond pads
test
pads
testing
Prior art date
Application number
PCT/US2004/022509
Other languages
French (fr)
Other versions
WO2005017959A2 (en
Inventor
Tu-Anh Tran
Richard K Eguchi
Peter R Harper
Chu-Chung Lee
William M Williams
Lois Yong
Original Assignee
Freescale Semiconductor Inc
Tu-Anh Tran
Richard K Eguchi
Peter R Harper
Chu-Chung Lee
William M Williams
Lois Yong
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Freescale Semiconductor Inc, Tu-Anh Tran, Richard K Eguchi, Peter R Harper, Chu-Chung Lee, William M Williams, Lois Yong filed Critical Freescale Semiconductor Inc
Priority to EP04778153A priority Critical patent/EP1664808A2/en
Priority to KR1020067002403A priority patent/KR101048576B1/en
Priority to JP2006522572A priority patent/JP4837560B2/en
Publication of WO2005017959A2 publication Critical patent/WO2005017959A2/en
Publication of WO2005017959A3 publication Critical patent/WO2005017959A3/en

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G11C29/08—Functional testing, e.g. testing during refresh, power-on self testing [POST] or distributed testing
    • G11C29/12—Built-in arrangements for testing, e.g. built-in self testing [BIST] or interconnection details
    • G11C29/1201—Built-in arrangements for testing, e.g. built-in self testing [BIST] or interconnection details comprising I/O circuitry
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28—Testing of electronic circuits, e.g. by signal tracer
    • G01R31/2851—Testing of integrated circuits [IC]
    • G01R31/2884—Testing of integrated circuits [IC] using dedicated test connectors, test elements or test circuits on the IC under test
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28—Testing of electronic circuits, e.g. by signal tracer
    • G01R31/317—Testing of digital circuits
    • G01R31/31712—Input or output aspects
    • G01R31/31715—Testing of input or output circuits; test of circuitry between the I/C pins and the functional core, e.g. testing of input or output driver, receiver, buffer
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28—Testing of electronic circuits, e.g. by signal tracer
    • G01R31/317—Testing of digital circuits
    • G01R31/3181—Functional testing
    • G01R31/3187—Built-in tests
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G11C29/08—Functional testing, e.g. testing during refresh, power-on self testing [POST] or distributed testing
    • G11C29/48—Arrangements in static stores specially adapted for testing by means external to the store, e.g. using direct memory access [DMA] or using auxiliary access paths
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/0555—Shape
    • H01L2224/05552—Shape in top view
    • H01L2224/05554—Shape in top view being square

Abstract

A semiconductor device (10) has a large number of bond pads (24) on the periphery for wirebonding. The semiconductor device (10) has a module (12) as well as other circuitry, but the module (12) takes significantly longer to test than the other circuitry. A relatively small number of the bond pads (20), the module bond pads (20), are required for the module testing due, at least in part, to the semiconductor device having a built-in self-test (BIST) (16) circuitry. The functionality of these module bond pads (22) is duplicated on the top surface of and in the interior of the semiconductor device (10) with module test pads (22) that are significantly larger than the bond pads (24) on the periphery. Having large pads (22) for testing allows longer probe needles, thus increasing parallel testing capability. Duplicating the functionality is achieved through a test pad interface so that the module bond pads (20) and the module test pads (22) do not have to be shorted together.
PCT/US2004/022509 2003-08-05 2004-07-15 Integrated circuit with test pad structure and method of testing WO2005017959A2 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
EP04778153A EP1664808A2 (en) 2003-08-05 2004-07-15 Integrated circuit with test pad structure and method of testing
KR1020067002403A KR101048576B1 (en) 2003-08-05 2004-07-15 Integrated circuits, test apparatus and methods, and integrated circuit fabrication methods
JP2006522572A JP4837560B2 (en) 2003-08-05 2004-07-15 Integrated circuit having inspection pad structure and manufacturing method thereof

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/634,484 2003-08-05
US10/634,484 US6937047B2 (en) 2003-08-05 2003-08-05 Integrated circuit with test pad structure and method of testing

Publications (2)

Publication Number Publication Date
WO2005017959A2 WO2005017959A2 (en) 2005-02-24
WO2005017959A3 true WO2005017959A3 (en) 2005-09-09

Family

ID=34116043

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2004/022509 WO2005017959A2 (en) 2003-08-05 2004-07-15 Integrated circuit with test pad structure and method of testing

Country Status (7)

Country Link
US (1) US6937047B2 (en)
EP (1) EP1664808A2 (en)
JP (1) JP4837560B2 (en)
KR (1) KR101048576B1 (en)
CN (1) CN100514076C (en)
TW (1) TWI354346B (en)
WO (1) WO2005017959A2 (en)

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JPWO2004102653A1 (en) * 2003-05-15 2006-07-13 新光電気工業株式会社 Semiconductor device and interposer
JP2005209239A (en) * 2004-01-20 2005-08-04 Nec Electronics Corp Semiconductor integrated circuit apparatus
JP4803966B2 (en) * 2004-03-31 2011-10-26 ルネサスエレクトロニクス株式会社 Semiconductor device
DE102006008454B4 (en) * 2005-02-21 2011-12-22 Samsung Electronics Co., Ltd. Pad structure, pad layout structure, semiconductor device, and pad layout method
KR100699838B1 (en) * 2005-04-13 2007-03-27 삼성전자주식회사 A semiconductor device including the ROM interface PAD
US7489151B2 (en) * 2005-10-03 2009-02-10 Pdf Solutions, Inc. Layout for DUT arrays used in semiconductor wafer testing
US7417449B1 (en) * 2005-11-15 2008-08-26 Advanced Micro Devices, Inc. Wafer stage storage structure speed testing
JP4986114B2 (en) * 2006-04-17 2012-07-25 ルネサスエレクトロニクス株式会社 Semiconductor integrated circuit and design method of semiconductor integrated circuit
US20080252330A1 (en) * 2007-04-16 2008-10-16 Verigy Corporation Method and apparatus for singulated die testing
US7566648B2 (en) * 2007-04-22 2009-07-28 Freescale Semiconductor Inc. Method of making solder pad
US7902852B1 (en) * 2007-07-10 2011-03-08 Pdf Solutions, Incorporated High density test structure array to support addressable high accuracy 4-terminal measurements
KR101318946B1 (en) * 2007-08-09 2013-10-17 삼성전자주식회사 Test device, SRAM test device and semiconductor intergrated circuit device
US7977962B2 (en) 2008-07-15 2011-07-12 Micron Technology, Inc. Apparatus and methods for through substrate via test
US8779790B2 (en) * 2009-06-26 2014-07-15 Freescale Semiconductor, Inc. Probing structure for evaluation of slow slew-rate square wave signals in low power circuits
CN102023236A (en) * 2009-09-11 2011-04-20 中芯国际集成电路制造(上海)有限公司 Test structure and test method
KR20120002761A (en) * 2010-07-01 2012-01-09 삼성전자주식회사 Method for arranging pads in a semiconductor apparatus, semiconductor memory apparatus using it, and processing system having it
US11482440B2 (en) * 2010-12-16 2022-10-25 Monolithic 3D Inc. 3D semiconductor device and structure with a built-in test circuit for repairing faulty circuits
KR101198141B1 (en) * 2010-12-21 2012-11-12 에스케이하이닉스 주식회사 Semiconductor memory apparatus
KR101682751B1 (en) * 2011-06-30 2016-12-05 주식회사 아도반테스토 Methods, apparatus, and systems for contacting semiconductor dies that are electrically coupled to test access interface positioned in scribe lines of a wafer
TWI483361B (en) * 2012-03-23 2015-05-01 Chipmos Technologies Inc Chip packaging substrate and chip packaging structure
KR102120817B1 (en) * 2013-10-28 2020-06-10 삼성디스플레이 주식회사 Driving integrated circuit pad unit and flat display panel having the same
US10340203B2 (en) * 2014-02-07 2019-07-02 United Microelectronics Corp. Semiconductor structure with through silicon via and method for fabricating and testing the same
CN104851875B (en) * 2014-02-18 2019-07-23 联华电子股份有限公司 Semiconductor structure with through silicon via and preparation method thereof and test method
US9373539B2 (en) 2014-04-07 2016-06-21 Freescale Semiconductor, Inc. Collapsible probe tower device and method of forming thereof
KR20160056379A (en) 2014-11-10 2016-05-20 삼성전자주식회사 Chip using triple pad configuration and packaging method thereof
KR20170042897A (en) * 2015-10-12 2017-04-20 에스케이하이닉스 주식회사 Semiconductor device
CN105467172B (en) * 2016-01-01 2019-05-21 广州兴森快捷电路科技有限公司 A kind of CAF test board having switching circuit
US10876988B2 (en) * 2016-05-13 2020-12-29 Weir Minerals Australia Ltd. Wear indicating component and method of monitoring wear
DE102016114146A1 (en) * 2016-08-01 2018-02-01 Endress+Hauser Flowtec Ag Test system for checking electronic connections
BR112019006091A2 (en) * 2016-09-28 2019-06-18 Smc Corp position detection switch and method for manufacturing it
CN107167685B (en) * 2017-06-27 2019-09-06 苏州苏纳光电有限公司 The electrical testing method and system of face-down bonding
US10495683B2 (en) * 2018-01-18 2019-12-03 Viavi Solutions Deutschland Gmbh Power supply stress testing
US10658364B2 (en) * 2018-02-28 2020-05-19 Stmicroelectronics S.R.L. Method for converting a floating gate non-volatile memory cell to a read-only memory cell and circuit structure thereof
US10969434B2 (en) * 2019-09-03 2021-04-06 Micron Technology, Inc. Methods and apparatuses to detect test probe contact at external terminals
CN111292661B (en) * 2020-03-30 2023-07-21 京东方科技集团股份有限公司 Array substrate, display panel and display device
TW202349576A (en) * 2020-07-31 2023-12-16 矽創電子股份有限公司 Flow guiding structure of chip
KR20220076177A (en) * 2020-11-30 2022-06-08 삼성전자주식회사 Film for package substrate and semiconductor package comprising the same
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Patent Citations (2)

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US6214630B1 (en) * 1999-12-22 2001-04-10 United Microelectronics Corp. Wafer level integrated circuit structure and method of manufacturing the same

Also Published As

Publication number Publication date
JP2007501522A (en) 2007-01-25
KR101048576B1 (en) 2011-07-12
EP1664808A2 (en) 2006-06-07
CN100514076C (en) 2009-07-15
KR20070007014A (en) 2007-01-12
TWI354346B (en) 2011-12-11
US6937047B2 (en) 2005-08-30
TW200514187A (en) 2005-04-16
JP4837560B2 (en) 2011-12-14
WO2005017959A2 (en) 2005-02-24
US20050030055A1 (en) 2005-02-10
CN1823277A (en) 2006-08-23

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