WO2005017951A3 - Quantum dots, nanocomposite materials with quantum dots, optical devices with quantum dots, and related fabrication methods - Google Patents

Quantum dots, nanocomposite materials with quantum dots, optical devices with quantum dots, and related fabrication methods Download PDF

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Publication number
WO2005017951A3
WO2005017951A3 PCT/US2003/024245 US0324245W WO2005017951A3 WO 2005017951 A3 WO2005017951 A3 WO 2005017951A3 US 0324245 W US0324245 W US 0324245W WO 2005017951 A3 WO2005017951 A3 WO 2005017951A3
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WO
WIPO (PCT)
Prior art keywords
quantum dots
optical devices
fabrication methods
quantum
nanocomposite materials
Prior art date
Application number
PCT/US2003/024245
Other languages
French (fr)
Other versions
WO2005017951A2 (en
Inventor
Howard Wing Hoon Lee
Alan Hap Chin
William Matthew Pfenninger
Majid Keshavarz
Original Assignee
Ultradots Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US10/212,001 external-priority patent/US20030066998A1/en
Priority claimed from US10/212,005 external-priority patent/US6710366B1/en
Priority claimed from US10/212,004 external-priority patent/US6794265B2/en
Priority claimed from US10/211,991 external-priority patent/US6819845B2/en
Application filed by Ultradots Inc filed Critical Ultradots Inc
Priority to JP2005507867A priority Critical patent/JP2006513458A/en
Priority to AU2003304433A priority patent/AU2003304433A1/en
Priority to EP03816720A priority patent/EP1547153A4/en
Publication of WO2005017951A2 publication Critical patent/WO2005017951A2/en
Publication of WO2005017951A3 publication Critical patent/WO2005017951A3/en

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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B6/122—Basic optical elements, e.g. light-guiding paths
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B6/122—Basic optical elements, e.g. light-guiding paths
    • G02B6/1225—Basic optical elements, e.g. light-guiding paths comprising photonic band-gap structures or photonic lattices
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/35—Non-linear optics
    • G02F1/3515—All-optical modulation, gating, switching, e.g. control of a light beam by another light beam
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/35—Non-linear optics
    • G02F1/355—Non-linear optics characterised by the materials used
    • G02F1/3556—Semiconductor materials, e.g. quantum wells
    • H—ELECTRICITY
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    • H01L29/122—Single quantum well structures
    • H01L29/127—Quantum box structures
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    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
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    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
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    • H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System
    • H01L29/1602—Diamond
    • G—PHYSICS
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    • G02B2006/12083—Constructional arrangements
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    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B2006/12133—Functions
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    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
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    • G02B2006/12133—Functions
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    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
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    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B2006/12166—Manufacturing methods
    • G02B2006/12195—Tapering
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/015—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on semiconductor elements with at least one potential jump barrier, e.g. PN, PIN junction
    • G02F1/017—Structures with periodic or quasi periodic potential variation, e.g. superlattices, quantum wells
    • G02F1/01791—Quantum boxes or quantum dots
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/21—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  by interference
    • G02F1/217—Multimode interference type
    • G—PHYSICS
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    • G02F1/3517—All-optical modulation, gating, switching, e.g. control of a light beam by another light beam using an interferometer
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
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    • G02F1/3515—All-optical modulation, gating, switching, e.g. control of a light beam by another light beam
    • G02F1/3521—All-optical modulation, gating, switching, e.g. control of a light beam by another light beam using a directional coupler
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    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
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    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F2/00—Demodulating light; Transferring the modulation of modulated light; Frequency-changing of light
    • G02F2/004—Transferring the modulation of modulated light, i.e. transferring the information from one optical carrier of a first wavelength to a second optical carrier of a second wavelength, e.g. all-optical wavelength converter
    • G02F2/006—All-optical wavelength conversion
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F2202/00—Materials and properties
    • G02F2202/32—Photonic crystals
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F2202/00—Materials and properties
    • G02F2202/36—Micro- or nanomaterials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
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    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02373—Group 14 semiconducting materials
    • H01L21/02381—Silicon, silicon germanium, germanium
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
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    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/34—Materials of the light emitting region containing only elements of group IV of the periodic system

Abstract

The invention relates to quantum dots, nanocomposite materials with quantum dots, optical devices with quantum dots, and related fabrication methods. In one embodiment, a quantum dot (104) comprises a core (106) including a semiconductor material Y selected from the group consisting of Si and Ge. The quantum dot also comprises a shell (108) surrounding the core. The quantum dot is substantially defect free such that the quantum dot exhibits photoluminescence with a quantum efficiency that is greater than 10 percent.
PCT/US2003/024245 2002-08-02 2003-08-01 Quantum dots, nanocomposite materials with quantum dots, optical devices with quantum dots, and related fabrication methods WO2005017951A2 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2005507867A JP2006513458A (en) 2002-08-02 2003-08-01 Quantum dots, nanocomposites with quantum dots, optical devices with quantum dots, and related manufacturing methods
AU2003304433A AU2003304433A1 (en) 2002-08-02 2003-08-01 Quantum dots, nanocomposite materials with quantum dots, optical devices with quantum dots, and related fabrication methods
EP03816720A EP1547153A4 (en) 2002-08-02 2003-08-01 Quantum dots, nanocomposite materials with quantum dots, optical devices with quantum dots, and related fabrication methods

Applications Claiming Priority (8)

Application Number Priority Date Filing Date Title
US10/212,001 US20030066998A1 (en) 2001-08-02 2002-08-02 Quantum dots of Group IV semiconductor materials
US10/211,991 2002-08-02
US10/212,005 US6710366B1 (en) 2001-08-02 2002-08-02 Nanocomposite materials with engineered properties
US10/212,005 2002-08-02
US10/212,004 US6794265B2 (en) 2001-08-02 2002-08-02 Methods of forming quantum dots of Group IV semiconductor materials
US10/212,001 2002-08-02
US10/212,004 2002-08-02
US10/211,991 US6819845B2 (en) 2001-08-02 2002-08-02 Optical devices with engineered nonlinear nanocomposite materials

Publications (2)

Publication Number Publication Date
WO2005017951A2 WO2005017951A2 (en) 2005-02-24
WO2005017951A3 true WO2005017951A3 (en) 2005-04-21

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PCT/US2003/024245 WO2005017951A2 (en) 2002-08-02 2003-08-01 Quantum dots, nanocomposite materials with quantum dots, optical devices with quantum dots, and related fabrication methods

Country Status (4)

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EP (1) EP1547153A4 (en)
JP (1) JP2006513458A (en)
AU (1) AU2003304433A1 (en)
WO (1) WO2005017951A2 (en)

Cited By (2)

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US8071359B2 (en) 1997-11-25 2011-12-06 The Regents Of The University Of California Semiconductor nanocrystal probes for biological applications and process for making and using such probes
US9441156B2 (en) 1997-11-13 2016-09-13 Massachusetts Institute Of Technology Highly luminescent color-selective nanocrystalline materials

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EP2902464B1 (en) 2002-03-29 2019-09-18 Massachusetts Institute Of Technology Light emitting device including semiconductor nanocrystals
WO2004042784A2 (en) 2002-08-15 2004-05-21 Massachussetts Institute Of Technology Stabilized semiconductor nanocrystals
US7332211B1 (en) 2002-11-07 2008-02-19 Massachusetts Institute Of Technology Layered materials including nanoparticles
EP2299482A3 (en) 2003-10-06 2014-12-17 Massachusetts Institute Of Technology Non-volatile memory device
US7645397B2 (en) * 2004-01-15 2010-01-12 Nanosys, Inc. Nanocrystal doped matrixes
US20060196375A1 (en) 2004-10-22 2006-09-07 Seth Coe-Sullivan Method and system for transferring a patterned material
US7799422B2 (en) 2004-11-03 2010-09-21 Massachusetts Institute Of Technology Absorbing film
WO2006137924A2 (en) 2004-11-03 2006-12-28 Massachusetts Institute Of Technology Light emitting device
US8891575B2 (en) 2004-11-30 2014-11-18 Massachusetts Institute Of Technology Optical feedback structures and methods of making
CA2621497C (en) 2005-09-16 2016-02-16 The Board Of Trustees Of The Leland Stanford Junior University Microresonator optical switch
JP2007197382A (en) * 2006-01-27 2007-08-09 Konica Minolta Medical & Graphic Inc Semiconductor nanoparticle
US8941299B2 (en) 2006-05-21 2015-01-27 Massachusetts Institute Of Technology Light emitting device including semiconductor nanocrystals
US8643058B2 (en) 2006-07-31 2014-02-04 Massachusetts Institute Of Technology Electro-optical device including nanocrystals
KR100853087B1 (en) * 2007-04-26 2008-08-19 삼성전자주식회사 Nanocrystal, preparation method thereof and electronic devices comprising the same
CA2724951C (en) * 2007-05-31 2021-09-07 The Administrators Of The Tulane Educational Fund Method of forming stable functionalized nanoparticles
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WO2005017951A2 (en) 2005-02-24
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