WO2005015308A3 - Fabrication process for high resolution lithography masks using evaporated or plasma assisted electron sensitive resists with plating image reversal - Google Patents
Fabrication process for high resolution lithography masks using evaporated or plasma assisted electron sensitive resists with plating image reversal Download PDFInfo
- Publication number
- WO2005015308A3 WO2005015308A3 PCT/CA2004/001010 CA2004001010W WO2005015308A3 WO 2005015308 A3 WO2005015308 A3 WO 2005015308A3 CA 2004001010 W CA2004001010 W CA 2004001010W WO 2005015308 A3 WO2005015308 A3 WO 2005015308A3
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- high resolution
- patterns
- evaporated
- fabrication process
- resolution lithography
- Prior art date
Links
- 238000001459 lithography Methods 0.000 title abstract 2
- 238000000034 method Methods 0.000 title abstract 2
- 238000007747 plating Methods 0.000 title abstract 2
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000000463 material Substances 0.000 abstract 2
- 239000011248 coating agent Substances 0.000 abstract 1
- 238000000576 coating method Methods 0.000 abstract 1
- 238000000151 deposition Methods 0.000 abstract 1
- 238000010894 electron beam technology Methods 0.000 abstract 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/20—Masks or mask blanks for imaging by charged particle beam [CPB] radiation, e.g. by electron beam; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
- G03F1/76—Patterning of masks by imaging
- G03F1/78—Patterning of masks by imaging by charged particle beam [CPB], e.g. electron beam patterning of masks
Abstract
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US49336803P | 2003-08-08 | 2003-08-08 | |
US60/493,368 | 2003-08-08 |
Publications (3)
Publication Number | Publication Date |
---|---|
WO2005015308A2 WO2005015308A2 (en) | 2005-02-17 |
WO2005015308A3 true WO2005015308A3 (en) | 2005-07-28 |
WO2005015308B1 WO2005015308B1 (en) | 2005-11-10 |
Family
ID=34135238
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/CA2004/001010 WO2005015308A2 (en) | 2003-08-08 | 2004-07-08 | Fabrication process for high resolution lithography masks using evaporated or plasma assisted electron sensitive resists with plating image reversal |
Country Status (1)
Country | Link |
---|---|
WO (1) | WO2005015308A2 (en) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN100435285C (en) * | 2006-02-09 | 2008-11-19 | 中国科学院微电子研究所 | A method for preparing the nano-electrode with the negative electronic erosion-resisting agent |
US20140014621A1 (en) * | 2012-07-16 | 2014-01-16 | Zhaoning Yu | Analysis of pattern features |
CN103436853B (en) * | 2013-09-04 | 2016-03-16 | 苏州锦元纳米科技有限公司 | Mix fluorine diamond like carbon film, its preparation method and comprise the impression block of this film |
US20160041471A1 (en) * | 2014-08-07 | 2016-02-11 | International Business Machines Corporation | Acidified conductive water for developer residue removal |
WO2019200049A1 (en) * | 2018-04-11 | 2019-10-17 | Wisys Technology Foundation, Inc. | Macromolecular sieves from semiconductor membranes for shape-based separation and sensing |
RU205508U1 (en) * | 2021-03-11 | 2021-07-19 | Акционерное общество "ГРУППА КРЕМНИЙ ЭЛ" | EXPLOSIVE PHOTOLITHOGRAPHY MASK |
Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57176817A (en) * | 1981-04-24 | 1982-10-30 | Citizen Watch Co Ltd | Manufacture of flat type crystal oscillator |
JPH10142438A (en) * | 1996-11-15 | 1998-05-29 | Nippon Telegr & Teleph Corp <Ntt> | Production of high polymer optical waveguide |
US5770096A (en) * | 1995-07-18 | 1998-06-23 | Samsung Aerospace Industries, Ltd. | Pattern formation method |
US5772905A (en) * | 1995-11-15 | 1998-06-30 | Regents Of The University Of Minnesota | Nanoimprint lithography |
US5846676A (en) * | 1995-09-26 | 1998-12-08 | Canon Kabushiki Kaisha | Mask structure and exposure method and apparatus using the same |
US6093520A (en) * | 1994-09-09 | 2000-07-25 | Board Of Supervisors Of Louisiana State University And Agricultural And Mechanical College | High aspect ratio microstructures and methods for manufacturing microstructures |
KR20020031799A (en) * | 2000-10-24 | 2002-05-03 | 박종섭 | Method of forming a fuse and a wire in a semiconductor device |
WO2003079112A1 (en) * | 2002-03-15 | 2003-09-25 | Quantiscript Inc. | Method of producing an etch-resistant polymer structure using electron beam lithography |
-
2004
- 2004-07-08 WO PCT/CA2004/001010 patent/WO2005015308A2/en active Application Filing
Patent Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57176817A (en) * | 1981-04-24 | 1982-10-30 | Citizen Watch Co Ltd | Manufacture of flat type crystal oscillator |
US6093520A (en) * | 1994-09-09 | 2000-07-25 | Board Of Supervisors Of Louisiana State University And Agricultural And Mechanical College | High aspect ratio microstructures and methods for manufacturing microstructures |
US5770096A (en) * | 1995-07-18 | 1998-06-23 | Samsung Aerospace Industries, Ltd. | Pattern formation method |
US5846676A (en) * | 1995-09-26 | 1998-12-08 | Canon Kabushiki Kaisha | Mask structure and exposure method and apparatus using the same |
US5772905A (en) * | 1995-11-15 | 1998-06-30 | Regents Of The University Of Minnesota | Nanoimprint lithography |
JPH10142438A (en) * | 1996-11-15 | 1998-05-29 | Nippon Telegr & Teleph Corp <Ntt> | Production of high polymer optical waveguide |
KR20020031799A (en) * | 2000-10-24 | 2002-05-03 | 박종섭 | Method of forming a fuse and a wire in a semiconductor device |
WO2003079112A1 (en) * | 2002-03-15 | 2003-09-25 | Quantiscript Inc. | Method of producing an etch-resistant polymer structure using electron beam lithography |
Non-Patent Citations (1)
Title |
---|
PATENT ABSTRACTS OF JAPAN vol. 1998, no. 10 31 August 1998 (1998-08-31) * |
Also Published As
Publication number | Publication date |
---|---|
WO2005015308A2 (en) | 2005-02-17 |
WO2005015308B1 (en) | 2005-11-10 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US7008877B2 (en) | Etching of chromium layers on photomasks utilizing high density plasma and low frequency RF bias | |
CN102007566B (en) | A method of manufacturing a gas electron multiplier | |
CN100477080C (en) | Method for manufacturing semiconductor device | |
CN101520600B (en) | Method for preparing transparent nano imprinting template based on X-ray exposure technology | |
TW200712790A (en) | Method of forming metal plate pattern and circuit board | |
TW200727752A (en) | Method of forming metal plate pattern and circuit board | |
TW200710560A (en) | Cluster tool and method for process integration in manufacturing of a photomask | |
US20100126367A1 (en) | Method for etching glass or metal substrates using negative photoresist and method for fabricating cliche using the same | |
US7501348B2 (en) | Method for forming a semiconductor structure having nanometer line-width | |
JP2005521238A (en) | Method for defining the source and drain and the gap between them | |
US6811959B2 (en) | Hardmask/barrier layer for dry etching chrome films and improving post develop resist profiles on photomasks | |
WO2005015308A3 (en) | Fabrication process for high resolution lithography masks using evaporated or plasma assisted electron sensitive resists with plating image reversal | |
WO2002095787A3 (en) | Anti-charging layer for beam lithography and mask fabrication | |
CN108628091B (en) | Mask plate and manufacturing method thereof | |
TWI501024B (en) | Lithography mask and method for fabricating the same | |
WO2003087938A3 (en) | Plasma polymerized electron beam resist | |
KR100720243B1 (en) | Forming method of fine pattern using double exposure process | |
US8338084B2 (en) | Patterning method | |
KR20070071659A (en) | Method for forming fine pattern of semiconductor device | |
US7799512B2 (en) | Method for forming ring pattern | |
KR20040046702A (en) | Method for forming fine pattern of semiconductor device using double exposure | |
JP2006080361A (en) | Method of manufacturing stencil mask | |
CN101969104B (en) | OLED manufacturing process with submicrometer structure | |
KR101250422B1 (en) | High Definition Printing Plate of Liquid Crystal Display and Method for Manufacture using the same | |
TW200612517A (en) | Methods for surface treament and structure formed therefrom |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
AK | Designated states |
Kind code of ref document: A2 Designated state(s): AE AG AL AM AT AU AZ BA BB BG BR BW BY BZ CA CH CN CO CR CU CZ DE DK DM DZ EC EE EG ES FI GB GD GE GH GM HR HU ID IL IN IS JP KE KG KP KR KZ LC LK LR LS LT LU LV MA MD MG MK MN MW MX MZ NA NI NO NZ OM PG PH PL PT RO RU SC SD SE SG SK SL SY TJ TM TN TR TT TZ UA UG US UZ VC VN YU ZA ZM ZW |
|
AL | Designated countries for regional patents |
Kind code of ref document: A2 Designated state(s): GM KE LS MW MZ NA SD SL SZ TZ UG ZM ZW AM AZ BY KG KZ MD RU TJ TM AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IT LU MC NL PL PT RO SE SI SK TR BF BJ CF CG CI CM GA GN GQ GW ML MR NE SN TD TG |
|
121 | Ep: the epo has been informed by wipo that ep was designated in this application | ||
B | Later publication of amended claims |
Effective date: 20050729 |
|
122 | Ep: pct application non-entry in european phase |