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Publication numberWO2005008334 A3
Publication typeApplication
Application numberPCT/US2004/021780
Publication date14 Jul 2005
Filing date7 Jul 2004
Priority date7 Jul 2003
Also published asUS7084984, US20050036149, WO2005008334A2
Publication numberPCT/2004/21780, PCT/US/2004/021780, PCT/US/2004/21780, PCT/US/4/021780, PCT/US/4/21780, PCT/US2004/021780, PCT/US2004/21780, PCT/US2004021780, PCT/US200421780, PCT/US4/021780, PCT/US4/21780, PCT/US4021780, PCT/US421780, WO 2005/008334 A3, WO 2005008334 A3, WO 2005008334A3, WO-A3-2005008334, WO2005/008334A3, WO2005008334 A3, WO2005008334A3
InventorsHenry Allen Hill
ApplicantHenry Allen Hill, Zetetic Inst
Export CitationBiBTeX, EndNote, RefMan
External Links: Patentscope, Espacenet
Apparatus and method for high speed scan for detection and measurement of properties of sub-wavelength defects and artifacts in semiconductor and mask metrology
WO 2005008334 A3
Abstract
A method of detecting defects or artifacts on or in an object, wherein the defects or artifacts are characterized by a characteristic dimension, the method involving: generating an input beam for illuminating a spot at a selected location on or in the object, wherein the spot has a size L that is substantially larger than the characteristic dimension; deriving a measurement beam and a reference beam from the input beam; directing the measurement beam onto the object as an incident measurement beam that illuminates the spot at that selected location on or in the object to produce a backscattered measurement beam; interfering the backscattered measurement beam with the reference beam to produce an interference beam, the reference beam being oriented relative to the backscattered measurement beam so as to produce a peak sensitivity for a portion of the backscattered measurement beam that emanates from the object at a predetermined diffraction angle; converting the interference beam for that selected location into an interference signal; and using the interference signal for that selected location to determine whether any defects or artifacts characterized by said characteristic dimension are present anywhere within a region on or in the object defined by the spot at that selected location.
Patent Citations
Cited PatentFiling datePublication dateApplicantTitle
US5923423 *4 Sep 199713 Jul 1999Sentec CorporationHeterodyne scatterometer for detecting and analyzing wafer surface defects
US6018391 *28 Jan 199825 Jan 2000Advantest CorporationMethod and apparatus for inspecting foreign matter by examining frequency differences between probing light beam and reference light beam
US6806959 *21 Nov 200119 Oct 2004Koninklijke Philips Electronics N.V.Measurement of surface defects on a movable surface
Classifications
International ClassificationG03F, G01B9/02
Cooperative ClassificationG01N21/4788, G01N2021/95676, G01N21/9501, G01N2021/4709
European ClassificationG01N21/95A
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