WO2005006424A8 - Method and apparatus for removing a residual organic layer from a substrate using reactive gases - Google Patents

Method and apparatus for removing a residual organic layer from a substrate using reactive gases

Info

Publication number
WO2005006424A8
WO2005006424A8 PCT/US2004/018610 US2004018610W WO2005006424A8 WO 2005006424 A8 WO2005006424 A8 WO 2005006424A8 US 2004018610 W US2004018610 W US 2004018610W WO 2005006424 A8 WO2005006424 A8 WO 2005006424A8
Authority
WO
WIPO (PCT)
Prior art keywords
layer
substrate
organic layer
reactive gases
residual organic
Prior art date
Application number
PCT/US2004/018610
Other languages
French (fr)
Other versions
WO2005006424A1 (en
Inventor
Larios John M De
Original Assignee
Lam Res Corp
Larios John M De
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lam Res Corp, Larios John M De filed Critical Lam Res Corp
Priority to EP04755013A priority Critical patent/EP1639631A1/en
Priority to JP2006517229A priority patent/JP2007521655A/en
Publication of WO2005006424A1 publication Critical patent/WO2005006424A1/en
Publication of WO2005006424A8 publication Critical patent/WO2005006424A8/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31127—Etching organic layers
    • H01L21/31133—Etching organic layers by chemical means
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only
    • G03F7/423—Stripping or agents therefor using liquids only containing mineral acids or salts thereof, containing mineral oxidizing substances, e.g. peroxy compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67075—Apparatus for fluid treatment for etching for wet etching
    • H01L21/6708—Apparatus for fluid treatment for etching for wet etching using mainly spraying means, e.g. nozzles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67075—Apparatus for fluid treatment for etching for wet etching
    • H01L21/67086—Apparatus for fluid treatment for etching for wet etching with the semiconductor substrates being dipped in baths or vessels

Abstract

A system and method for removing a layer from a substrate surface is provided. The method includes providing at least one encapsulating transport, where the encapsulating transport contains at least some reactive gas. At least one encapsulating transport is applied to the layer, and the layer is a chemically reactive layer. The encapsulating transport ruptures on the chemically reactive layer and releases the reactive gas in combination with a reaction inducing agent onto the chemically reactive layer to facilitate removal of the layer from the substrate surface. The at least one encapsulating transport is a bubble or a foam.
PCT/US2004/018610 2003-06-27 2004-06-10 Method and apparatus for removing a residual organic layer from a substrate using reactive gases WO2005006424A1 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
EP04755013A EP1639631A1 (en) 2003-06-27 2004-06-10 Method and apparatus for removing a residual organic layer from a substrate using reactive gases
JP2006517229A JP2007521655A (en) 2003-06-27 2004-06-10 Method and apparatus for removing a residual organic layer from a substrate using a reactive gas

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/608,871 2003-06-27
US10/608,871 US20040261823A1 (en) 2003-06-27 2003-06-27 Method and apparatus for removing a target layer from a substrate using reactive gases

Publications (2)

Publication Number Publication Date
WO2005006424A1 WO2005006424A1 (en) 2005-01-20
WO2005006424A8 true WO2005006424A8 (en) 2005-05-19

Family

ID=33540702

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2004/018610 WO2005006424A1 (en) 2003-06-27 2004-06-10 Method and apparatus for removing a residual organic layer from a substrate using reactive gases

Country Status (7)

Country Link
US (1) US20040261823A1 (en)
EP (1) EP1639631A1 (en)
JP (1) JP2007521655A (en)
KR (1) KR20060030058A (en)
CN (1) CN1813341A (en)
TW (1) TWI293190B (en)
WO (1) WO2005006424A1 (en)

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Also Published As

Publication number Publication date
US20040261823A1 (en) 2004-12-30
JP2007521655A (en) 2007-08-02
WO2005006424A1 (en) 2005-01-20
TW200503097A (en) 2005-01-16
TWI293190B (en) 2008-02-01
KR20060030058A (en) 2006-04-07
EP1639631A1 (en) 2006-03-29
CN1813341A (en) 2006-08-02

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Free format text: IN PCT GAZETTE 03/2005 UNDER (22) REPLACE "11 JUNE 2004 (11.06.2004)" BY "10 JUNE 2004 (10.06.2004)"

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