WO2005001800A2 - Alternative thin film transistors for liquid crystal displays - Google Patents

Alternative thin film transistors for liquid crystal displays Download PDF

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Publication number
WO2005001800A2
WO2005001800A2 PCT/US2004/018037 US2004018037W WO2005001800A2 WO 2005001800 A2 WO2005001800 A2 WO 2005001800A2 US 2004018037 W US2004018037 W US 2004018037W WO 2005001800 A2 WO2005001800 A2 WO 2005001800A2
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WO
WIPO (PCT)
Prior art keywords
thin film
film transistors
gate
film transistor
source
Prior art date
Application number
PCT/US2004/018037
Other languages
French (fr)
Other versions
WO2005001800A3 (en
Inventor
Candice Hellen Brown Elliott
Thomas Lloyd Credelle
Matthew Osbourne Schlegel
Original Assignee
Clairvoyante, Inc.
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Publication of WO2005001800A2 publication Critical patent/WO2005001800A2/en
Publication of WO2005001800A3 publication Critical patent/WO2005001800A3/en

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Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78645—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with multiple gate

Definitions

  • FIG. 1A depicts the "double TFT" arrangement 100 of the '451 patent.
  • Source line 104 connects to the TFT via source electrode 106.
  • Two gate electrodes 1708 are connected to gate line 102.
  • Two drain electrodes 110 connect to the pixel and are formed such that the two gate electrodes 108 affect conduction from the source electrode to the drain electrodes when activated.
  • FIG. 4 depicts a TFT 400 made in the manner taught in the '297 patent.
  • gate line 402 delivers the gate signal to gate electrode 408.
  • Source line 404 sends image data to source electrodes 406.
  • FIG. 1 shows a prior art TFT having a double source/drain structure.
  • FIGS. 2 and 3 show alternative TFTs having a double source/drain structure.
  • FIG. 4 shows a prior art TFT with a double gate structure.
  • FIG. 5 show TFT structures in a reverse orientation and normal orientation, respectively.
  • FIG. 6 show TFT structures in a reverse orientation and normal orientation with an added gate crossover in the normal orientation to balance any parasitic capacitance found in the reverse orientation.
  • FIGS. 7 show TFT structures in a reverse orientation and normal orientation with one fewer gate crossover in the reverse orientation to match any parasitic capacitance in the normal orientation.
  • FIG. 1 shows a prior art TFT having a double source/drain structure.
  • FIGS. 2 and 3 show alternative TFTs having a double source/drain structure.
  • FIG. 4 shows a prior art TFT with a double gate structure.
  • FIG. 5 show TFT structures in a reverse orientation and normal orientation, respectively.
  • FIG. 6 show T
  • FIG. 8 shows one novel pixel element design having a comer removed from the pixel to balance parasitic capacitances.
  • FIG. 9 shows yet another novel pixel element design having multiple corners removed to balance parasitic capacitances.
  • FIG. 10 shows yet another novel pixel structure in which at least one extra line is added to shield the pixel element from parasitic effects.
  • FIGS. 2 and 3 provide different alternative embodiments for the prior art double TFT structure shown in FIG. 1. These structures can provide reduced source to gate capacitance, which can cause crosstalk in certain images. However, the gate to drain crossover can lessen the damage to image quality.
  • One advantage of the embodiment of FIG. 3 is that there is only one crossover 132 that may reduce parasitic capacitance.
  • TFTs are remapped on the panel, it is possible for some TFTs on the panel to be implemented in different comers or quadrants of a pixel area. For example, some TFTs may be constructed in the upper left hand comer of the pixel area, some in the upper right hand comer of the pixel area and so on. If all such TFTs were constructed the same way, then it would be likely that the source-drain orientation would be reversed for left hand corner and right hand comer implementation. Such non-uniformity of construction might introduce uneven parasitic capacitance in the case of a given TFT misalignment. [018] FIG.
  • TFT 504 is constructed within the upper left hand comer of its associated pixel in the usual manner - i.e. without any crossovers to avoid any introduced parasitic capacitance. It is noted that the source (S) and drain (D) electrodes are placed in a left-to-right fashion. TFT 502 is shown constructed in the upper right hand corner of a pixel area in a reverse orientation - i.e. a crossover 514 from source line 506 is constructed so that the source electrode 510 and drain electrode 512 are also in left-to-right fashion.
  • FIG. 6 shows another embodiment of TFTs 602 and 604.
  • FIG. 7 is yet another embodiment of TFTs 702 and 704.
  • the gate electrode crossover 606 in FIG. 6 has been removed in favor of a gate line crossover 706 which may have a lesser impact on individual pixel elements.
  • FIGS. 8 and 9 are embodiments of pixel elements with comers 810 and 910 removed to match the one comer removed containing the TFT structure. These pixel elements as designed here may balance the parasitic capacitances than a normal pixel structure.
  • FIG. 8 and 9 are embodiments of pixel elements with comers 810 and 910 removed to match the one comer removed containing the TFT structure. These pixel elements as designed here may balance the parasitic capacitances than a normal pixel structure.
  • FIG. 10 is another embodiment of a pixel structure that employs at least one extra metal line 1010 that may help to shield the pixel element from the parasitic capacitances between the gate lines and the pixel element. Additionally, if a dot inversion scheme is employed, then the opposing polarities on both lines 1010 will also help to balance any parasitic capacitance between the source lines and the pixel elements.
  • standard LCD fabrication techniques can be implemented to form such structures.
  • the column, gate, and electrode lines can be formed of transparent material such as transparent conductive oxide so as not to degrade the optical qualities of the LCD.

Abstract

Alternative thin film transistors (502 and 504) for liquid crystal displays are disclosed. The alternative transistors (502 and 504) can be used for panels of displays such as liquid crystal displays (LCDs), especially those having alternative pixel arrangements. These transistors (502 and 504) can be oriented on a panel of an LCD using different, non-traditional configurations, while addressing misalignment and parasitic capacitance.

Description

ALTERNATIVE THIN FILM TRANSISTORS FOR LIQUID CRYSTAL DISPLAYS
BACKGROUND
[01] Thin-film transistor (TFT) misalignment and parasitic capacitance can degrade the quality and performance of electronic devices such as liquid crystal displays (LCDs). One known attempt to correct for TFT misalignments and any associated increase in parasitic capacitance is found in US Patent Number 5,191,451 to Katayama et al ("the '451 patent"). FIG. 1A depicts the "double TFT" arrangement 100 of the '451 patent. Source line 104 connects to the TFT via source electrode 106. Two gate electrodes 1708 are connected to gate line 102. Two drain electrodes 110 connect to the pixel and are formed such that the two gate electrodes 108 affect conduction from the source electrode to the drain electrodes when activated. It is noted that there are two crossover regions 112 that are connected to TFT may produce additional parasitic capacitance between the gate and the source. As discussed in the '451 patent, any vertical misalignment of the TFT placement is somewhat corrected by this double TFT arrangement as is discussed therein. [02] Another manner of reducing the ill effects of TFT misalignment is shown in US Patent Number 5,097,297 to Nakazawa ("the '297 patent"). FIG. 4 depicts a TFT 400 made in the manner taught in the '297 patent. As may be seen in FIG. 2, gate line 402 delivers the gate signal to gate electrode 408. Source line 404 sends image data to source electrodes 406. When the gate electrode is activated, the image data is transferred to the pixel via the drain electrode 410. It is noted that this TFT embodiment contains only one gate crossover 412 which aids in reducing parasitic capacitance. [03] Furthermore, prior LCDs use the same orientation to align transistor in the pixel area of the display. However, for alternative pixel arrangements, transistors may need to be located in unconventional locations of a pixel area, while addressing misalignment and parasitic capacitance. BRIEF DESCRIPTION OF THE DRAWINGS [04] The accompanying drawings, which are incorporated in, and constitute a part of this specification illustrate exemplary implementations and embodiments of the invention and, together with the description, serve to explain principles of the invention. [05] FIG. 1 shows a prior art TFT having a double source/drain structure. [06] FIGS. 2 and 3 show alternative TFTs having a double source/drain structure. [07] FIG. 4 shows a prior art TFT with a double gate structure. [08] FIG. 5 show TFT structures in a reverse orientation and normal orientation, respectively. [09] FIG. 6 show TFT structures in a reverse orientation and normal orientation with an added gate crossover in the normal orientation to balance any parasitic capacitance found in the reverse orientation. [010] FIGS. 7 show TFT structures in a reverse orientation and normal orientation with one fewer gate crossover in the reverse orientation to match any parasitic capacitance in the normal orientation. [011] FIG. 8 shows one novel pixel element design having a comer removed from the pixel to balance parasitic capacitances. [012] FIG. 9 shows yet another novel pixel element design having multiple corners removed to balance parasitic capacitances. [013] FIG. 10 shows yet another novel pixel structure in which at least one extra line is added to shield the pixel element from parasitic effects. DETAILED DESCRIPTION [014] Reference will now be made in detail to implementations and embodiments, examples of which are illustrated in the accompanying drawings. Wherever possible, the same reference numbers will be used throughout the drawings to refer to the same or like parts. [015] The following implementations and embodiments disclose alternative thin film transistors for liquid crystal displays are disclosed. The alternative transistors can be used for panels of displays such as liquid crystal displays (LCDs), especially those having alternative pixel arrangements. These transistors can be oriented on a panel of an LCD using different, non-traditional configurations, while addressing misalignment and parasitic capacitance. [016] FIGS. 2 and 3 provide different alternative embodiments for the prior art double TFT structure shown in FIG. 1. These structures can provide reduced source to gate capacitance, which can cause crosstalk in certain images. However, the gate to drain crossover can lessen the damage to image quality. One advantage of the embodiment of FIG. 3 is that there is only one crossover 132 that may reduce parasitic capacitance. [017] Another set of TFT redesigns are shown in FIGS. 5 through 10 to handle the unevenness of parasitic capacitance that might be introduced by the above described TFT remapping. As TFTs are remapped on the panel, it is possible for some TFTs on the panel to be implemented in different comers or quadrants of a pixel area. For example, some TFTs may be constructed in the upper left hand comer of the pixel area, some in the upper right hand comer of the pixel area and so on. If all such TFTs were constructed the same way, then it would be likely that the source-drain orientation would be reversed for left hand corner and right hand comer implementation. Such non-uniformity of construction might introduce uneven parasitic capacitance in the case of a given TFT misalignment. [018] FIG. 5 is one embodiment of a TFT built with a reverse orientation 502 as compared with a TFT built with a typical orientation 1904. For exemplary purposes, TFT 504 is constructed within the upper left hand comer of its associated pixel in the usual manner - i.e. without any crossovers to avoid any introduced parasitic capacitance. It is noted that the source (S) and drain (D) electrodes are placed in a left-to-right fashion. TFT 502 is shown constructed in the upper right hand corner of a pixel area in a reverse orientation - i.e. a crossover 514 from source line 506 is constructed so that the source electrode 510 and drain electrode 512 are also in left-to-right fashion. Thus, if there is a TFT misalignment in the horizontal direction, then TFTs 502 and 504 will receive the same amount of added parasitic capacitance - thus, keeping the panel's defects uniform. It will be appreciated that although TFT 502 and TFT 504 are depicted side-by-side and connected to the same column, this is primarily for explanatory purposes. It is unlikely that two adjoining subpixels would share the same column/data line - thus, TFT 504 and its associated pixel is provided to show the distinction between a normal TFT orientation and TFT 502 in a reverse orientation. [019] FIG. 6 shows another embodiment of TFTs 602 and 604. As can be seen, a new crossover 606 is added to TFT 604 so as to balance the added parasitic capacitance via crossover 604. FIG. 7 is yet another embodiment of TFTs 702 and 704. As maybe seen here, the gate electrode crossover 606 in FIG. 6 has been removed in favor of a gate line crossover 706 which may have a lesser impact on individual pixel elements. [020] FIGS. 8 and 9 are embodiments of pixel elements with comers 810 and 910 removed to match the one comer removed containing the TFT structure. These pixel elements as designed here may balance the parasitic capacitances than a normal pixel structure. [021] FIG. 10 is another embodiment of a pixel structure that employs at least one extra metal line 1010 that may help to shield the pixel element from the parasitic capacitances between the gate lines and the pixel element. Additionally, if a dot inversion scheme is employed, then the opposing polarities on both lines 1010 will also help to balance any parasitic capacitance between the source lines and the pixel elements. [022] Regarding the alternative TFT structures and pixel elements disclosed herein, standard LCD fabrication techniques can be implemented to form such structures. Moreover, the column, gate, and electrode lines can be formed of transparent material such as transparent conductive oxide so as not to degrade the optical qualities of the LCD.

Claims

CLAIMSWhat is claimed is:
1. A device having a double thin film transistor, the device comprising: at least one drain electrode for the double thin film transistor; a gate line having at least two gate electrodes for the double thin film transistor; and a source line having at least one source electrode for the double thin film transistor, wherein a crossover is formed by the drain electrode and a gate line.
2. A thin film transistor comprising: a source comprising a source electrode connected to a source line; a gate comprising at least a first gate electrode and a second gate electrode, said first and second gate electrodes connected to a gate line; a drain connected to said source electrode, said drain comprising at least a first drain electrode and a second drain electrode; wherein there is at most a single crossover between said gate and said source.
3. The thin film transistor of Claim 2 wherein there are at least two crossovers between said gate and said drain.
4. A device comprising a plurality of thin film transistors as recited in Claim 2.
5. A device comprising a plurality of first thin film transistors and a plurality of second thin film transistors, said first and said second thin film transistors comprising a source electrode and a drain electrode; wherein said first thin film transistors are substantially in normal orientation and said second thin film transistors are substantially in reverse orientation; and wherein further said source electrodes and said drain electrodes of both said first thin film transistor and said second thin film transistor are oriented in substantially the same direction.
6. The device of Claim 5 wherein said second thin film transistors comprise a crossover to effect substantially the same source electrode and drain electode orientation as in said first thin film transistors.
7. The device of Claim 5 wherein any misalignment of thin film transistors are substantially the same for said first thin film transistors and said second thin film transistors.
8. The device of Claim 6 wherein said first thin film transistors comprise a crossover to substantially balance any parasitic capacitance affected by said crossover in said second thin film transistor.
9. The device of Claim 5 wherein said device further comprises pixel elements connected to said first thin film transistors and said second thin film transistors; wherein further said pixel elements have at least one comer removed.
10. The device of Claim 9 wherein said comer being removed is shaped substantially like the corner comprising said thin film transistor.
11. A pixel comprising: a thin film transistor, said thin film transistor connected to a gate line and a source line; a pixel element connected to said thin film transistor; and at least one extra metal line interposed between said gate line and said pixel element.
PCT/US2004/018037 2003-06-06 2004-06-04 Alternative thin film transistors for liquid crystal displays WO2005001800A2 (en)

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US10/456,794 US7791679B2 (en) 2003-06-06 2003-06-06 Alternative thin film transistors for liquid crystal displays
US10/456,794 2003-06-06

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WO2005001800A3 WO2005001800A3 (en) 2005-04-28

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KR (1) KR101041089B1 (en)
CN (2) CN101488527B (en)
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US7791679B2 (en) 2010-09-07
US20040246393A1 (en) 2004-12-09

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