WO2005000733A3 - Circuit integre sur puce de hautes performances - Google Patents

Circuit integre sur puce de hautes performances Download PDF

Info

Publication number
WO2005000733A3
WO2005000733A3 PCT/FR2004/001565 FR2004001565W WO2005000733A3 WO 2005000733 A3 WO2005000733 A3 WO 2005000733A3 FR 2004001565 W FR2004001565 W FR 2004001565W WO 2005000733 A3 WO2005000733 A3 WO 2005000733A3
Authority
WO
WIPO (PCT)
Prior art keywords
components
active
integrated circuit
substrate
passive components
Prior art date
Application number
PCT/FR2004/001565
Other languages
English (en)
Other versions
WO2005000733A2 (fr
Inventor
Jean-Pierre Joly
Laurent Ulmer
Guy Parat
Original Assignee
Commissariat Energie Atomique
Jean-Pierre Joly
Laurent Ulmer
Guy Parat
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Commissariat Energie Atomique, Jean-Pierre Joly, Laurent Ulmer, Guy Parat filed Critical Commissariat Energie Atomique
Priority to EP04767421.3A priority Critical patent/EP1636130B1/fr
Priority to US10/561,299 priority patent/US8048766B2/en
Publication of WO2005000733A2 publication Critical patent/WO2005000733A2/fr
Publication of WO2005000733A3 publication Critical patent/WO2005000733A3/fr

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
    • B81C1/00222—Integrating an electronic processing unit with a micromechanical structure
    • B81C1/00253—Processes for integrating an electronic processing unit with a micromechanical structure not provided for in B81C1/0023 - B81C1/00246
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
    • H01L21/2003—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy characterised by the substrate
    • H01L21/2007—Bonding of semiconductor wafers to insulating substrates or to semiconducting substrates using an intermediate insulating layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8221—Three dimensional integrated circuits stacked in different levels
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/50—Multistep manufacturing processes of assemblies consisting of devices, each device being of a type provided for in group H01L27/00 or H01L29/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0688—Integrated circuits having a three-dimensional layout
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/10—Inductors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Semiconductor Integrated Circuits (AREA)

Abstract

La présente invention concerne un procédé de fabrication de puce contenant un circuit intégré comprenant des composants actifs et des composants passifs. Ce procédé comprend les étapes suivantes : on réalise un premier substrat (1) contenant au moins un composant actif (3) parmi lesdits composants actifs, et un second substrat (2) contenant les composants « critiques » (7,8) parmi lesdits composants passifs (c'est à dire des composants passifs dont l'élaboration directement sur le substrat contenant les circuits actifs et les interconnexions métalliques poserait problème), puis l'on scelle les deux substrats (1) et (2) par report de couche. Ces composants actifs (3) peuvent par exemple être des transistors. Ces composants passifs « critiques » peuvent par exemple être des MEMS (8) et/ou des condensateurs (7), notamment des condensateurs dont le matériau diélectrique est une pérovskite. L'invention concerne également une puce (100) fabriquée au moyen d'un procédé selon l'invention.
PCT/FR2004/001565 2003-06-24 2004-06-23 Circuit integre sur puce de hautes performances WO2005000733A2 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
EP04767421.3A EP1636130B1 (fr) 2003-06-24 2004-06-23 Circuit integre sur puce de hautes performances
US10/561,299 US8048766B2 (en) 2003-06-24 2004-06-23 Integrated circuit on high performance chip

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR03/07617 2003-06-24
FR0307617A FR2856844B1 (fr) 2003-06-24 2003-06-24 Circuit integre sur puce de hautes performances

Publications (2)

Publication Number Publication Date
WO2005000733A2 WO2005000733A2 (fr) 2005-01-06
WO2005000733A3 true WO2005000733A3 (fr) 2005-08-25

Family

ID=33515360

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/FR2004/001565 WO2005000733A2 (fr) 2003-06-24 2004-06-23 Circuit integre sur puce de hautes performances

Country Status (4)

Country Link
US (1) US8048766B2 (fr)
EP (1) EP1636130B1 (fr)
FR (1) FR2856844B1 (fr)
WO (1) WO2005000733A2 (fr)

Families Citing this family (60)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2748851B1 (fr) 1996-05-15 1998-08-07 Commissariat Energie Atomique Procede de realisation d'une couche mince de materiau semiconducteur
FR2773261B1 (fr) 1997-12-30 2000-01-28 Commissariat Energie Atomique Procede pour le transfert d'un film mince comportant une etape de creation d'inclusions
FR2848336B1 (fr) 2002-12-09 2005-10-28 Commissariat Energie Atomique Procede de realisation d'une structure contrainte destinee a etre dissociee
US7632738B2 (en) * 2003-06-24 2009-12-15 Sang-Yun Lee Wafer bonding method
FR2861497B1 (fr) 2003-10-28 2006-02-10 Soitec Silicon On Insulator Procede de transfert catastrophique d'une couche fine apres co-implantation
US7307331B2 (en) * 2004-03-31 2007-12-11 Intel Corporation Integrated radio front-end module with embedded circuit elements
US7312505B2 (en) 2004-03-31 2007-12-25 Intel Corporation Semiconductor substrate with interconnections and embedded circuit elements
US7382056B2 (en) 2004-04-29 2008-06-03 Sychip Inc. Integrated passive devices
JP2006196668A (ja) * 2005-01-13 2006-07-27 Toshiba Corp 半導体装置及びその製造方法
US8217473B2 (en) 2005-07-29 2012-07-10 Hewlett-Packard Development Company, L.P. Micro electro-mechanical system packaging and interconnect
FR2891281B1 (fr) * 2005-09-28 2007-12-28 Commissariat Energie Atomique Procede de fabrication d'un element en couches minces.
FI119729B (fi) * 2005-11-23 2009-02-27 Vti Technologies Oy Menetelmä mikroelektromekaanisen komponentin valmistamiseksi ja mikroelektromekaaninen komponentti
FI119728B (fi) 2005-11-23 2009-02-27 Vti Technologies Oy Menetelmä mikroelektromekaanisen komponentin valmistamiseksi ja mikroelektromekaaninen komponentti
JP5011820B2 (ja) * 2006-05-24 2012-08-29 オムロン株式会社 積層デバイス、およびその製造方法
US8043931B1 (en) * 2006-09-18 2011-10-25 Gang Zhang Methods for forming multi-layer silicon structures
US8268347B1 (en) 2006-10-24 2012-09-18 Aradigm Corporation Dual action, inhaled formulations providing both an immediate and sustained release profile
JP4337870B2 (ja) * 2006-12-15 2009-09-30 セイコーエプソン株式会社 Ｍｅｍｓレゾネータ及びｍｅｍｓレゾネータの製造方法
FR2910179B1 (fr) 2006-12-19 2009-03-13 Commissariat Energie Atomique PROCEDE DE FABRICATION DE COUCHES MINCES DE GaN PAR IMPLANTATION ET RECYCLAGE D'UN SUBSTRAT DE DEPART
FR2910705B1 (fr) * 2006-12-20 2009-02-27 E2V Semiconductors Soc Par Act Structure de plots de connexion pour capteur d'image sur substrat aminci
US7732299B2 (en) * 2007-02-12 2010-06-08 Taiwan Semiconductor Manufacturing Company, Ltd. Process for wafer bonding
US8212541B2 (en) 2008-05-08 2012-07-03 Massachusetts Institute Of Technology Power converter with capacitive energy transfer and fast dynamic response
US20110090722A1 (en) * 2008-06-16 2011-04-21 Nxp B.V. Voltage converter
KR100945800B1 (ko) * 2008-12-09 2010-03-05 김영혜 이종 접합 웨이퍼 제조방법
FR2947098A1 (fr) 2009-06-18 2010-12-24 Commissariat Energie Atomique Procede de transfert d'une couche mince sur un substrat cible ayant un coefficient de dilatation thermique different de celui de la couche mince
US20110073967A1 (en) * 2009-08-28 2011-03-31 Analog Devices, Inc. Apparatus and method of forming a mems acoustic transducer with layer transfer processes
US10389235B2 (en) 2011-05-05 2019-08-20 Psemi Corporation Power converter
US8564092B2 (en) * 2011-02-25 2013-10-22 National Semiconductor Corporation Power convertor device and construction methods
EP4318909A3 (fr) 2011-05-05 2024-03-06 PSEMI Corporation Convertisseur continu-continu à étages modulaires
US10680515B2 (en) 2011-05-05 2020-06-09 Psemi Corporation Power converters with modular stages
US9882471B2 (en) 2011-05-05 2018-01-30 Peregrine Semiconductor Corporation DC-DC converter with modular stages
US8743553B2 (en) 2011-10-18 2014-06-03 Arctic Sand Technologies, Inc. Power converters with integrated capacitors
US8723491B2 (en) 2011-12-19 2014-05-13 Arctic Sand Technologies, Inc. Control of power converters with capacitive energy transfer
US9530763B2 (en) 2012-04-04 2016-12-27 Massachusetts Institute Of Technology Monolithic integration of CMOS and non-silicon devices
JP6024400B2 (ja) 2012-11-07 2016-11-16 ソニー株式会社 半導体装置、半導体装置の製造方法、及びアンテナスイッチモジュール
US8693224B1 (en) 2012-11-26 2014-04-08 Arctic Sand Technologies Inc. Pump capacitor configuration for switched capacitor circuits
US9061890B2 (en) * 2013-03-13 2015-06-23 Intel Corporation Methods of forming buried electromechanical structures coupled with device substrates and structures formed thereby
US8619445B1 (en) 2013-03-15 2013-12-31 Arctic Sand Technologies, Inc. Protection of switched capacitor power converter
US8724353B1 (en) 2013-03-15 2014-05-13 Arctic Sand Technologies, Inc. Efficient gate drivers for switched capacitor converters
US9847712B2 (en) 2013-03-15 2017-12-19 Peregrine Semiconductor Corporation Fault control for switched capacitor power converter
US9203299B2 (en) 2013-03-15 2015-12-01 Artic Sand Technologies, Inc. Controller-driven reconfiguration of switched-capacitor power converter
FR3003688B1 (fr) * 2013-03-22 2016-07-01 Commissariat Energie Atomique Procede d'assemblage flip chip comportant le pre-enrobage d'elements d'interconnexion
US9660520B2 (en) 2013-04-09 2017-05-23 Massachusetts Institute Of Technology Method and apparatus to provide power conversion with high power factor
CN104140072B (zh) * 2013-05-09 2016-07-13 苏州敏芯微电子技术股份有限公司 微机电系统与集成电路的集成芯片及其制造方法
US9742266B2 (en) 2013-09-16 2017-08-22 Arctic Sand Technologies, Inc. Charge pump timing control
US9041459B2 (en) 2013-09-16 2015-05-26 Arctic Sand Technologies, Inc. Partial adiabatic conversion
CN105493238A (zh) * 2013-09-25 2016-04-13 英特尔公司 形成埋入式垂直电容器的方法和由此形成的结构
US9825545B2 (en) 2013-10-29 2017-11-21 Massachusetts Institute Of Technology Switched-capacitor split drive transformer power conversion circuit
KR102161260B1 (ko) 2013-11-07 2020-09-29 삼성전자주식회사 관통전극을 갖는 반도체 소자 및 그 제조방법
GB2592543B (en) 2014-03-14 2022-01-26 Arctic Sand Technologies Inc Charge pump stability control
US10128745B2 (en) 2014-03-14 2018-11-13 Psemi Corporation Charge balanced charge pump control
US10693368B2 (en) 2014-03-14 2020-06-23 Psemi Corporation Charge pump stability control
WO2016004427A1 (fr) 2014-07-03 2016-01-07 Massachusetts Institute Of Technology Conversion de correction de facteur de puissance à haute fréquence et à haute densité pour interface de grille d'entrée universelle
US9786613B2 (en) 2014-08-07 2017-10-10 Qualcomm Incorporated EMI shield for high frequency layer transferred devices
US10468381B2 (en) * 2014-09-29 2019-11-05 Apple Inc. Wafer level integration of passive devices
FR3027380A1 (fr) * 2014-10-17 2016-04-22 Commissariat Energie Atomique Dispositif de refroidissement par liquide caloporteur pour composants electroniques
CN107580749A (zh) 2015-03-13 2018-01-12 佩里格林半导体公司 用于促进绝热的电容器间电荷传输的具有电感器的dc‑dc变压器
TWI636533B (zh) 2017-09-15 2018-09-21 Industrial Technology Research Institute 半導體封裝結構
US10686367B1 (en) 2019-03-04 2020-06-16 Psemi Corporation Apparatus and method for efficient shutdown of adiabatic charge pumps
CN116207074A (zh) * 2019-07-29 2023-06-02 群创光电股份有限公司 电子装置
FR3121544B1 (fr) * 2021-03-31 2023-11-24 St Microelectronics Crolles 2 Sas Structure d'isolation thermique et électrique

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1096259A1 (fr) * 1999-11-01 2001-05-02 Samsung Electronics Co., Ltd. Micro-gyroscope encapsulé sous vide très poussé et méthode pour sa fabrication
US6306720B1 (en) * 2000-01-10 2001-10-23 United Microelectronics Corp. Method for forming capacitor of mixed-mode device
US20020000646A1 (en) * 2000-02-02 2002-01-03 Raytheon Company, A Delware Corporation Vacuum package fabrication of integrated circuit components
US6407929B1 (en) * 2000-06-29 2002-06-18 Intel Corporation Electronic package having embedded capacitors and method of fabrication therefor
US20020185469A1 (en) * 1999-08-11 2002-12-12 Applied Materials, Inc. Method of micromachining a multi-part cavity
US20030001221A1 (en) * 2001-02-03 2003-01-02 Frank Fischer Micromechanical component as well as a method for producing a micromechanical component
WO2003021667A2 (fr) * 2001-08-29 2003-03-13 Honeywell International, Inc. Boitier pourvu d'un inducteur et/ou d'un condensateur integres
DE10153319A1 (de) * 2001-10-29 2003-05-15 Austriamicrocsystems Ag Schlos Mikrosensor

Family Cites Families (234)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3915757A (en) 1972-08-09 1975-10-28 Niels N Engel Ion plating method and product therefrom
US3913520A (en) 1972-08-14 1975-10-21 Precision Thin Film Corp High vacuum deposition apparatus
US3993909A (en) 1973-03-16 1976-11-23 U.S. Philips Corporation Substrate holder for etching thin films
FR2245779B1 (fr) * 1973-09-28 1978-02-10 Cit Alcatel
US3901423A (en) 1973-11-26 1975-08-26 Purdue Research Foundation Method for fracturing crystalline materials
US4170662A (en) 1974-11-05 1979-10-09 Eastman Kodak Company Plasma plating
US4121334A (en) 1974-12-17 1978-10-24 P. R. Mallory & Co. Inc. Application of field-assisted bonding to the mass production of silicon type pressure transducers
US3957107A (en) * 1975-02-27 1976-05-18 The United States Of America As Represented By The Secretary Of The Air Force Thermal switch
US4039416A (en) 1975-04-21 1977-08-02 White Gerald W Gasless ion plating
GB1542299A (en) * 1976-03-23 1979-03-14 Warner Lambert Co Blade shields
US4028149A (en) * 1976-06-30 1977-06-07 Ibm Corporation Process for forming monocrystalline silicon carbide on silicon substrates
US4074139A (en) * 1976-12-27 1978-02-14 Rca Corporation Apparatus and method for maskless ion implantation
US4108751A (en) 1977-06-06 1978-08-22 King William J Ion beam implantation-sputtering
US4179324A (en) 1977-11-28 1979-12-18 Spire Corporation Process for fabricating thin film and glass sheet laminate
DE2849184A1 (de) * 1978-11-13 1980-05-22 Bbc Brown Boveri & Cie Verfahren zur herstellung eines scheibenfoermigen silizium-halbleiterbauelementes mit negativer anschraegung
JPS55104057A (en) * 1979-02-02 1980-08-09 Hitachi Ltd Ion implantation device
US4324631A (en) * 1979-07-23 1982-04-13 Spin Physics, Inc. Magnetron sputtering of magnetic materials
CH640886A5 (de) 1979-08-02 1984-01-31 Balzers Hochvakuum Verfahren zum aufbringen harter verschleissfester ueberzuege auf unterlagen.
US4244348A (en) * 1979-09-10 1981-01-13 Atlantic Richfield Company Process for cleaving crystalline materials
FR2475068B1 (fr) * 1980-02-01 1986-05-16 Commissariat Energie Atomique Procede de dopage de semi-conducteurs
FR2506344B2 (fr) 1980-02-01 1986-07-11 Commissariat Energie Atomique Procede de dopage de semi-conducteurs
US4342631A (en) 1980-06-16 1982-08-03 Illinois Tool Works Inc. Gasless ion plating process and apparatus
US4471003A (en) 1980-11-25 1984-09-11 Cann Gordon L Magnetoplasmadynamic apparatus and process for the separation and deposition of materials
FR2501727A1 (fr) 1981-03-13 1982-09-17 Vide Traitement Procede de traitements thermochimiques de metaux par bombardement ionique
US4361600A (en) 1981-11-12 1982-11-30 General Electric Company Method of making integrated circuits
US4412868A (en) 1981-12-23 1983-11-01 General Electric Company Method of making integrated circuits utilizing ion implantation and selective epitaxial growth
US4486247A (en) 1982-06-21 1984-12-04 Westinghouse Electric Corp. Wear resistant steel articles with carbon, oxygen and nitrogen implanted in the surface thereof
FR2529383A1 (fr) * 1982-06-24 1983-12-30 Commissariat Energie Atomique Porte-cible a balayage mecanique utilisable notamment pour l'implantation d'ioris
FR2537768A1 (fr) 1982-12-08 1984-06-15 Commissariat Energie Atomique Procede et dispositif d'obtention de faisceaux de particules de densite spatialement modulee, application a la gravure et a l'implantation ioniques
FR2537777A1 (fr) * 1982-12-10 1984-06-15 Commissariat Energie Atomique Procede et dispositif d'implantation de particules dans un solide
DE3246480A1 (de) 1982-12-15 1984-06-20 Wacker-Chemitronic Gesellschaft für Elektronik-Grundstoffe mbH, 8263 Burghausen Verfahren zur herstellung von halbleiterscheiben mit getternder scheibenrueckseite
US4500563A (en) * 1982-12-15 1985-02-19 Pacific Western Systems, Inc. Independently variably controlled pulsed R.F. plasma chemical vapor processing
US4468309A (en) 1983-04-22 1984-08-28 White Engineering Corporation Method for resisting galling
GB2144343A (en) * 1983-08-02 1985-03-06 Standard Telephones Cables Ltd Optical fibre manufacture
US4567505A (en) * 1983-10-27 1986-01-28 The Board Of Trustees Of The Leland Stanford Junior University Heat sink and method of attaching heat sink to a semiconductor integrated circuit and the like
JPS6088535U (ja) 1983-11-24 1985-06-18 住友電気工業株式会社 半導体ウエハ
FR2558263B1 (fr) 1984-01-12 1986-04-25 Commissariat Energie Atomique Accelerometre directif et son procede de fabrication par microlithographie
GB2155024A (en) 1984-03-03 1985-09-18 Standard Telephones Cables Ltd Surface treatment of plastics materials
FR2563377B1 (fr) 1984-04-19 1987-01-23 Commissariat Energie Atomique Procede de fabrication d'une couche isolante enterree dans un substrat semi-conducteur, par implantation ionique
US4542863A (en) 1984-07-23 1985-09-24 Larson Edwin L Pipe-thread sealing tape reel with tape retarding element
US4566403A (en) * 1985-01-30 1986-01-28 Sovonics Solar Systems Apparatus for microwave glow discharge deposition
US4837172A (en) 1986-07-18 1989-06-06 Matsushita Electric Industrial Co., Ltd. Method for removing impurities existing in semiconductor substrate
US4717683A (en) * 1986-09-23 1988-01-05 Motorola Inc. CMOS process
US4764394A (en) 1987-01-20 1988-08-16 Wisconsin Alumni Research Foundation Method and apparatus for plasma source ion implantation
EP0284818A1 (fr) * 1987-04-03 1988-10-05 BBC Brown Boveri AG Procédé et dispositif pour lier des couches
JPS63254762A (ja) * 1987-04-13 1988-10-21 Nissan Motor Co Ltd Ｃｍｏｓ半導体装置
US4847792A (en) 1987-05-04 1989-07-11 Texas Instruments Incorporated Process and apparatus for detecting aberrations in production process operations
SE458398B (sv) 1987-05-27 1989-03-20 H Biverot Ljusdetekterande och ljusriktningsbestaemmande anordning
FR2616590B1 (fr) 1987-06-15 1990-03-02 Commissariat Energie Atomique Procede de fabrication d'une couche d'isolant enterree dans un substrat semi-conducteur par implantation ionique et structure semi-conductrice comportant cette couche
US4956698A (en) 1987-07-29 1990-09-11 The United States Of America As Represented By The Department Of Commerce Group III-V compound semiconductor device having p-region formed by Be and Group V ions
US4846928A (en) 1987-08-04 1989-07-11 Texas Instruments, Incorporated Process and apparatus for detecting aberrations in production process operations
US4887005A (en) 1987-09-15 1989-12-12 Rough J Kirkwood H Multiple electrode plasma reactor power distribution system
US5015353A (en) * 1987-09-30 1991-05-14 The United States Of America As Represented By The Secretary Of The Navy Method for producing substoichiometric silicon nitride of preselected proportions
US5138422A (en) 1987-10-27 1992-08-11 Nippondenso Co., Ltd. Semiconductor device which includes multiple isolated semiconductor segments on one chip
GB8725497D0 (en) 1987-10-30 1987-12-02 Atomic Energy Authority Uk Isolation of silicon
US5200805A (en) * 1987-12-28 1993-04-06 Hughes Aircraft Company Silicon carbide:metal carbide alloy semiconductor and method of making the same
US4904610A (en) * 1988-01-27 1990-02-27 General Instrument Corporation Wafer level process for fabricating passivated semiconductor devices
DE3803424C2 (de) * 1988-02-05 1995-05-18 Gsf Forschungszentrum Umwelt Verfahren zur quantitativen, tiefendifferentiellen Analyse fester Proben
JP2666945B2 (ja) 1988-02-08 1997-10-22 株式会社東芝 半導体装置の製造方法
US4894709A (en) * 1988-03-09 1990-01-16 Massachusetts Institute Of Technology Forced-convection, liquid-cooled, microchannel heat sinks
US4853250A (en) 1988-05-11 1989-08-01 Universite De Sherbrooke Process of depositing particulate material on a substrate
NL8802028A (nl) 1988-08-16 1990-03-16 Philips Nv Werkwijze voor het vervaardigen van een inrichting.
JP2670623B2 (ja) 1988-09-19 1997-10-29 アネルバ株式会社 マイクロ波プラズマ処理装置
US4952273A (en) 1988-09-21 1990-08-28 Microscience, Inc. Plasma generation in electron cyclotron resonance
US4996077A (en) * 1988-10-07 1991-02-26 Texas Instruments Incorporated Distributed ECR remote plasma processing and apparatus
US4891329A (en) * 1988-11-29 1990-01-02 University Of North Carolina Method of forming a nonsilicon semiconductor on insulator structure
NL8900388A (nl) 1989-02-17 1990-09-17 Philips Nv Werkwijze voor het verbinden van twee voorwerpen.
JPH02302044A (ja) 1989-05-16 1990-12-14 Fujitsu Ltd 半導体装置の製造方法
US4929566A (en) * 1989-07-06 1990-05-29 Harris Corporation Method of making dielectrically isolated integrated circuits using oxygen implantation and expitaxial growth
JPH0355822A (ja) 1989-07-25 1991-03-11 Shin Etsu Handotai Co Ltd 半導体素子形成用基板の製造方法
US4948458A (en) 1989-08-14 1990-08-14 Lam Research Corporation Method and apparatus for producing magnetically-coupled planar plasma
US5036023A (en) 1989-08-16 1991-07-30 At&T Bell Laboratories Rapid thermal processing method of making a semiconductor device
US5013681A (en) * 1989-09-29 1991-05-07 The United States Of America As Represented By The Secretary Of The Navy Method of producing a thin silicon-on-insulator layer
US5310446A (en) * 1990-01-10 1994-05-10 Ricoh Company, Ltd. Method for producing semiconductor film
JPH0650738B2 (ja) 1990-01-11 1994-06-29 株式会社東芝 半導体装置及びその製造方法
US5034343A (en) 1990-03-08 1991-07-23 Harris Corporation Manufacturing ultra-thin wafer using a handle wafer
US5529108A (en) * 1990-05-09 1996-06-25 Lanxide Technology Company, Lp Thin metal matrix composites and production methods
CN1018844B (zh) 1990-06-02 1992-10-28 中国科学院兰州化学物理研究所 防锈干膜润滑剂
US5131968A (en) 1990-07-31 1992-07-21 Motorola, Inc. Gradient chuck method for wafer bonding employing a convex pressure
JPH0719739B2 (ja) 1990-09-10 1995-03-06 信越半導体株式会社 接合ウェーハの製造方法
US5198371A (en) * 1990-09-24 1993-03-30 Biota Corp. Method of making silicon material with enhanced surface mobility by hydrogen ion implantation
US5618739A (en) * 1990-11-15 1997-04-08 Seiko Instruments Inc. Method of making light valve device using semiconductive composite substrate
US5300788A (en) * 1991-01-18 1994-04-05 Kopin Corporation Light emitting diode bars and arrays and method of making same
GB2251546B (en) 1991-01-11 1994-05-11 Philips Electronic Associated An electrical kettle
DE4106288C2 (de) 1991-02-28 2001-05-31 Bosch Gmbh Robert Sensor zur Messung von Drücken oder Beschleunigungen
JP2812405B2 (ja) 1991-03-15 1998-10-22 信越半導体株式会社 半導体基板の製造方法
US5110748A (en) * 1991-03-28 1992-05-05 Honeywell Inc. Method for fabricating high mobility thin film transistors as integrated drivers for active matrix display
US5442205A (en) 1991-04-24 1995-08-15 At&T Corp. Semiconductor heterostructure devices with strained semiconductor layers
US5256581A (en) 1991-08-28 1993-10-26 Motorola, Inc. Silicon film with improved thickness control
FR2681472B1 (fr) 1991-09-18 1993-10-29 Commissariat Energie Atomique Procede de fabrication de films minces de materiau semiconducteur.
US5243049A (en) * 1992-01-22 1993-09-07 Neurogen Corporation Certain pyrroloquinolinones: a new class of GABA brain receptor ligands
JP3416163B2 (ja) * 1992-01-31 2003-06-16 キヤノン株式会社 半導体基板及びその作製方法
JPH05235312A (ja) * 1992-02-19 1993-09-10 Fujitsu Ltd 半導体基板及びその製造方法
US5614019A (en) * 1992-06-08 1997-03-25 Air Products And Chemicals, Inc. Method for the growth of industrial crystals
US5234535A (en) 1992-12-10 1993-08-10 International Business Machines Corporation Method of producing a thin silicon-on-insulator layer
WO1994017558A1 (fr) 1993-01-29 1994-08-04 The Regents Of The University Of California Composant monolithique passif
US5400458A (en) * 1993-03-31 1995-03-28 Minnesota Mining And Manufacturing Company Brush segment for industrial brushes
FR2714524B1 (fr) 1993-12-23 1996-01-26 Commissariat Energie Atomique Procede de realisation d'une structure en relief sur un support en materiau semiconducteur
EP0942161B1 (fr) * 1993-12-28 2003-03-19 Honda Giken Kogyo Kabushiki Kaisha Mécanisme d'admission de carburant gazeux et de détermination et d'indication de la quantité de ce carburant pour moteur à combustion à gaz
DE4400985C1 (de) * 1994-01-14 1995-05-11 Siemens Ag Verfahren zur Herstellung einer dreidimensionalen Schaltungsanordnung
FR2715502B1 (fr) 1994-01-26 1996-04-05 Commissariat Energie Atomique Structure présentant des cavités et procédé de réalisation d'une telle structure.
FR2715503B1 (fr) 1994-01-26 1996-04-05 Commissariat Energie Atomique Substrat pour composants intégrés comportant une couche mince et son procédé de réalisation.
FR2715501B1 (fr) 1994-01-26 1996-04-05 Commissariat Energie Atomique Procédé de dépôt de lames semiconductrices sur un support.
JP3293736B2 (ja) 1996-02-28 2002-06-17 キヤノン株式会社 半導体基板の作製方法および貼り合わせ基体
JP3352340B2 (ja) 1995-10-06 2002-12-03 キヤノン株式会社 半導体基体とその製造方法
US5880010A (en) * 1994-07-12 1999-03-09 Sun Microsystems, Inc. Ultrathin electronics
JPH0851103A (ja) 1994-08-08 1996-02-20 Fuji Electric Co Ltd 薄膜の生成方法
US5524339A (en) 1994-09-19 1996-06-11 Martin Marietta Corporation Method for protecting gallium arsenide mmic air bridge structures
FR2725074B1 (fr) 1994-09-22 1996-12-20 Commissariat Energie Atomique Procede de fabrication d'une structure comportant une couche mince semi-conductrice sur un substrat
US5567654A (en) 1994-09-28 1996-10-22 International Business Machines Corporation Method and workpiece for connecting a thin layer to a monolithic electronic module's surface and associated module packaging
JP3743519B2 (ja) * 1994-10-18 2006-02-08 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ シリコン−酸化物薄層の製造方法
WO1996015550A1 (fr) 1994-11-10 1996-05-23 Lawrence Semiconductor Research Laboratory, Inc. Compositions silicium-germanium-carbone et processus associes
ATE216802T1 (de) 1994-12-12 2002-05-15 Advanced Micro Devices Inc Verfahren zur herstellung vergrabener oxidschichten
JP3381443B2 (ja) 1995-02-02 2003-02-24 ソニー株式会社 基体から半導体層を分離する方法、半導体素子の製造方法およびｓｏｉ基板の製造方法
FR2736934B1 (fr) 1995-07-21 1997-08-22 Commissariat Energie Atomique Procede de fabrication d'une structure avec une couche utile maintenue a distance d'un substrat par des butees, et de desolidarisation d'une telle couche
FR2738671B1 (fr) * 1995-09-13 1997-10-10 Commissariat Energie Atomique Procede de fabrication de films minces a materiau semiconducteur
FR2744285B1 (fr) 1996-01-25 1998-03-06 Commissariat Energie Atomique Procede de transfert d'une couche mince d'un substrat initial sur un substrat final
FR2747506B1 (fr) 1996-04-11 1998-05-15 Commissariat Energie Atomique Procede d'obtention d'un film mince de materiau semiconducteur comprenant notamment des composants electroniques
FR2748850B1 (fr) 1996-05-15 1998-07-24 Commissariat Energie Atomique Procede de realisation d'un film mince de materiau solide et applications de ce procede
FR2748851B1 (fr) 1996-05-15 1998-08-07 Commissariat Energie Atomique Procede de realisation d'une couche mince de materiau semiconducteur
US5863832A (en) * 1996-06-28 1999-01-26 Intel Corporation Capping layer in interconnect system and method for bonding the capping layer onto the interconnect system
US5897331A (en) * 1996-11-08 1999-04-27 Midwest Research Institute High efficiency low cost thin film silicon solar cell design and method for making
US6127199A (en) 1996-11-12 2000-10-03 Seiko Epson Corporation Manufacturing method of active matrix substrate, active matrix substrate and liquid crystal display device
SG65697A1 (en) 1996-11-15 1999-06-22 Canon Kk Process for producing semiconductor article
US6054363A (en) 1996-11-15 2000-04-25 Canon Kabushiki Kaisha Method of manufacturing semiconductor article
DE19648501A1 (de) * 1996-11-22 1998-05-28 Max Planck Gesellschaft Verfahren für die lösbare Verbindung und anschließende Trennung reversibel gebondeter und polierter Scheiben sowie eine Waferstruktur und Wafer
KR100232886B1 (ko) 1996-11-23 1999-12-01 김영환 Soi 웨이퍼 제조방법
DE19648759A1 (de) 1996-11-25 1998-05-28 Max Planck Gesellschaft Verfahren zur Herstellung von Mikrostrukturen sowie Mikrostruktur
FR2756847B1 (fr) * 1996-12-09 1999-01-08 Commissariat Energie Atomique Procede de separation d'au moins deux elements d'une structure en contact entre eux par implantation ionique
SG67458A1 (en) 1996-12-18 1999-09-21 Canon Kk Process for producing semiconductor article
FR2758907B1 (fr) 1997-01-27 1999-05-07 Commissariat Energie Atomique Procede d'obtention d'un film mince, notamment semiconducteur, comportant une zone protegee des ions, et impliquant une etape d'implantation ionique
JP3114643B2 (ja) 1997-02-20 2000-12-04 日本電気株式会社 半導体基板の構造および製造方法
JPH10275752A (ja) * 1997-03-28 1998-10-13 Ube Ind Ltd 張合わせウエハ−及びその製造方法、基板
US6013954A (en) * 1997-03-31 2000-01-11 Nec Corporation Semiconductor wafer having distortion-free alignment regions
US6251754B1 (en) 1997-05-09 2001-06-26 Denso Corporation Semiconductor substrate manufacturing method
US6033974A (en) * 1997-05-12 2000-03-07 Silicon Genesis Corporation Method for controlled cleaving process
US6162705A (en) 1997-05-12 2000-12-19 Silicon Genesis Corporation Controlled cleavage process and resulting device using beta annealing
US5877070A (en) * 1997-05-31 1999-03-02 Max-Planck Society Method for the transfer of thin layers of monocrystalline material to a desirable substrate
US6150239A (en) 1997-05-31 2000-11-21 Max Planck Society Method for the transfer of thin layers monocrystalline material onto a desirable substrate
EP0996967B1 (fr) 1997-06-30 2008-11-19 Max-Planck-Gesellschaft zur Förderung der Wissenschaften e.V. Procédé pour produire des structures en couche sur un substrat à semiconducteur, substrat à semiconducteur et composants à semiconducteur produits à l'aide dudit procédé
US6054369A (en) 1997-06-30 2000-04-25 Intersil Corporation Lifetime control for semiconductor devices
US6097096A (en) * 1997-07-11 2000-08-01 Advanced Micro Devices Metal attachment method and structure for attaching substrates at low temperatures
US6534380B1 (en) * 1997-07-18 2003-03-18 Denso Corporation Semiconductor substrate and method of manufacturing the same
US6316820B1 (en) * 1997-07-25 2001-11-13 Hughes Electronics Corporation Passivation layer and process for semiconductor devices
US6103599A (en) 1997-07-25 2000-08-15 Silicon Genesis Corporation Planarizing technique for multilayered substrates
US6255731B1 (en) 1997-07-30 2001-07-03 Canon Kabushiki Kaisha SOI bonding structure
FR2767416B1 (fr) 1997-08-12 1999-10-01 Commissariat Energie Atomique Procede de fabrication d'un film mince de materiau solide
FR2767604B1 (fr) 1997-08-19 2000-12-01 Commissariat Energie Atomique Procede de traitement pour le collage moleculaire et le decollage de deux structures
US5882987A (en) * 1997-08-26 1999-03-16 International Business Machines Corporation Smart-cut process for the production of thin semiconductor material films
JP3697034B2 (ja) 1997-08-26 2005-09-21 キヤノン株式会社 微小開口を有する突起の製造方法、及びそれらによるプローブまたはマルチプローブ
US5981400A (en) 1997-09-18 1999-11-09 Cornell Research Foundation, Inc. Compliant universal substrate for epitaxial growth
US5920764A (en) 1997-09-30 1999-07-06 International Business Machines Corporation Process for restoring rejected wafers in line for reuse as new
JP2998724B2 (ja) 1997-11-10 2000-01-11 日本電気株式会社 張り合わせｓｏｉ基板の製造方法
FR2771852B1 (fr) 1997-12-02 1999-12-31 Commissariat Energie Atomique Procede de transfert selectif d'une microstructure, formee sur un substrat initial, vers un substrat final
JP4173573B2 (ja) 1997-12-03 2008-10-29 株式会社ナノテム 多孔質砥粒砥石の製造方法
FR2773261B1 (fr) * 1997-12-30 2000-01-28 Commissariat Energie Atomique Procede pour le transfert d'un film mince comportant une etape de creation d'inclusions
JP3501642B2 (ja) * 1997-12-26 2004-03-02 キヤノン株式会社 基板処理方法
US6071795A (en) 1998-01-23 2000-06-06 The Regents Of The University Of California Separation of thin films from transparent substrates by selective optical processing
FR2774510B1 (fr) 1998-02-02 2001-10-26 Soitec Silicon On Insulator Procede de traitement de substrats, notamment semi-conducteurs
FR2774797B1 (fr) 1998-02-11 2000-03-10 Commissariat Energie Atomique Procede de realisation d'un ensemble a plusieurs tetes magnetiques et ensemble a tetes multiples obtenu par ce procede
MY118019A (en) 1998-02-18 2004-08-30 Canon Kk Composite member, its separation method, and preparation method of semiconductor substrate by utilization thereof
JP3809733B2 (ja) 1998-02-25 2006-08-16 セイコーエプソン株式会社 薄膜トランジスタの剥離方法
JPH11307747A (ja) 1998-04-17 1999-11-05 Nec Corp Ｓｏｉ基板およびその製造方法
US6057212A (en) * 1998-05-04 2000-05-02 International Business Machines Corporation Method for making bonded metal back-plane substrates
US5909627A (en) 1998-05-18 1999-06-01 Philips Electronics North America Corporation Process for production of thin layers of semiconductor material
DE19840421C2 (de) 1998-06-22 2000-05-31 Fraunhofer Ges Forschung Verfahren zur Fertigung von dünnen Substratschichten und eine dafür geeignete Substratanordnung
US6054370A (en) * 1998-06-30 2000-04-25 Intel Corporation Method of delaminating a pre-fabricated transistor layer from a substrate for placement on another wafer
US6118181A (en) 1998-07-29 2000-09-12 Agilent Technologies, Inc. System and method for bonding wafers
US6271101B1 (en) 1998-07-29 2001-08-07 Semiconductor Energy Laboratory Co., Ltd. Process for production of SOI substrate and process for production of semiconductor device
FR2781925B1 (fr) * 1998-07-30 2001-11-23 Commissariat Energie Atomique Transfert selectif d'elements d'un support vers un autre support
EP0989593A3 (fr) 1998-09-25 2002-01-02 Canon Kabushiki Kaisha Dispositif et procédé de séparation de substrat, et procédé de fabrication de susbtrat
FR2784795B1 (fr) * 1998-10-16 2000-12-01 Commissariat Energie Atomique Structure comportant une couche mince de materiau composee de zones conductrices et de zones isolantes et procede de fabrication d'une telle structure
FR2784800B1 (fr) * 1998-10-20 2000-12-01 Commissariat Energie Atomique Procede de realisation de composants passifs et actifs sur un meme substrat isolant
CA2293040C (fr) * 1998-12-23 2006-10-24 Kohler Co. Systeme bicombustible pour moteur a combustion interne
US6346458B1 (en) * 1998-12-31 2002-02-12 Robert W. Bower Transposed split of ion cut materials
JP2000219511A (ja) * 1999-01-28 2000-08-08 Nippon Carbide Ind Co Inc シアナミド水溶液
FR2789518B1 (fr) 1999-02-10 2003-06-20 Commissariat Energie Atomique Structure multicouche a contraintes internes controlees et procede de realisation d'une telle structure
GB2347230B (en) * 1999-02-23 2003-04-16 Marconi Electronic Syst Ltd Optical slow-wave modulator
JP3532788B2 (ja) * 1999-04-13 2004-05-31 唯知 須賀 半導体装置及びその製造方法
WO2000063965A1 (fr) 1999-04-21 2000-10-26 Silicon Genesis Corporation Procede de traitement de couche clivee pour la fabrication de substrats
JP2001015721A (ja) 1999-04-30 2001-01-19 Canon Inc 複合部材の分離方法及び薄膜の製造方法
US6310387B1 (en) 1999-05-03 2001-10-30 Silicon Wave, Inc. Integrated circuit inductor with high self-resonance frequency
US6664169B1 (en) 1999-06-08 2003-12-16 Canon Kabushiki Kaisha Process for producing semiconductor member, process for producing solar cell, and anodizing apparatus
US6362082B1 (en) * 1999-06-28 2002-03-26 Intel Corporation Methodology for control of short channel effects in MOS transistors
FR2796491B1 (fr) 1999-07-12 2001-08-31 Commissariat Energie Atomique Procede de decollement de deux elements et dispositif pour sa mise en oeuvre
US6323108B1 (en) 1999-07-27 2001-11-27 The United States Of America As Represented By The Secretary Of The Navy Fabrication ultra-thin bonded semiconductor layers
US6287940B1 (en) * 1999-08-02 2001-09-11 Honeywell International Inc. Dual wafer attachment process
FR2797347B1 (fr) 1999-08-04 2001-11-23 Commissariat Energie Atomique Procede de transfert d'une couche mince comportant une etape de surfragililisation
JP2003506883A (ja) 1999-08-10 2003-02-18 シリコン ジェネシス コーポレイション 低打ち込みドーズ量を用いて多層基板を製造するための劈開プロセス
US6263941B1 (en) * 1999-08-10 2001-07-24 Silicon Genesis Corporation Nozzle for cleaving substrates
DE19958803C1 (de) 1999-12-07 2001-08-30 Fraunhofer Ges Forschung Verfahren und Vorrichtung zum Handhaben von Halbleitersubstraten bei der Prozessierung und/oder Bearbeitung
JP2001196566A (ja) 2000-01-07 2001-07-19 Sony Corp 半導体基板およびその製造方法
US6548375B1 (en) * 2000-03-16 2003-04-15 Hughes Electronics Corporation Method of preparing silicon-on-insulator substrates particularly suited for microwave applications
DE60035179T2 (de) * 2000-04-28 2008-02-21 Stmicroelectronics S.R.L., Agrate Brianza Struktur zur elektrischen Verbindung eines ersten mit einem darüberliegenden zweiten Halbleitermaterial, diese elektrische Verbindung verwendendes Komposit und ihre Herstellung
FR2809867B1 (fr) 2000-05-30 2003-10-24 Commissariat Energie Atomique Substrat fragilise et procede de fabrication d'un tel substrat
JP3440057B2 (ja) * 2000-07-05 2003-08-25 唯知 須賀 半導体装置およびその製造方法
FR2811807B1 (fr) * 2000-07-12 2003-07-04 Commissariat Energie Atomique Procede de decoupage d'un bloc de materiau et de formation d'un film mince
KR100414479B1 (ko) * 2000-08-09 2004-01-07 주식회사 코스타트반도체 반도체 패키징 공정의 이식성 도전패턴을 갖는 테이프 및그 제조방법
US6600173B2 (en) * 2000-08-30 2003-07-29 Cornell Research Foundation, Inc. Low temperature semiconductor layering and three-dimensional electronic circuits using the layering
FR2818010B1 (fr) 2000-12-08 2003-09-05 Commissariat Energie Atomique Procede de realisation d'une couche mince impliquant l'introduction d'especes gazeuses
US7139947B2 (en) 2000-12-22 2006-11-21 Intel Corporation Test access port
FR2819099B1 (fr) 2000-12-28 2003-09-26 Commissariat Energie Atomique Procede de realisation d'une structure empilee
US6774010B2 (en) 2001-01-25 2004-08-10 International Business Machines Corporation Transferable device-containing layer for silicon-on-insulator applications
US6734762B2 (en) 2001-04-09 2004-05-11 Motorola, Inc. MEMS resonators and method for manufacturing MEMS resonators
FR2823373B1 (fr) 2001-04-10 2005-02-04 Soitec Silicon On Insulator Dispositif de coupe de couche d'un substrat, et procede associe
FR2823599B1 (fr) * 2001-04-13 2004-12-17 Commissariat Energie Atomique Substrat demomtable a tenue mecanique controlee et procede de realisation
FR2823596B1 (fr) * 2001-04-13 2004-08-20 Commissariat Energie Atomique Substrat ou structure demontable et procede de realisation
US6759282B2 (en) 2001-06-12 2004-07-06 International Business Machines Corporation Method and structure for buried circuits and devices
FR2828428B1 (fr) 2001-08-07 2003-10-17 Soitec Silicon On Insulator Dispositif de decollement de substrats et procede associe
FR2830983B1 (fr) 2001-10-11 2004-05-14 Commissariat Energie Atomique Procede de fabrication de couches minces contenant des microcomposants
FR2833106B1 (fr) * 2001-12-03 2005-02-25 St Microelectronics Sa Circuit integre comportant un composant auxiliaire, par exemple un composant passif ou un microsysteme electromecanique, dispose au-dessus d'une puce electronique, et procede de fabrication correspondant
US6887769B2 (en) * 2002-02-06 2005-05-03 Intel Corporation Dielectric recess for wafer-to-wafer and die-to-die metal bonding and method of fabricating the same
US6762076B2 (en) * 2002-02-20 2004-07-13 Intel Corporation Process of vertically stacking multiple wafers supporting different active integrated circuit (IC) devices
US6645831B1 (en) 2002-05-07 2003-11-11 Intel Corporation Thermally stable crystalline defect-free germanium bonded to silicon and silicon dioxide
US7535100B2 (en) * 2002-07-12 2009-05-19 The United States Of America As Represented By The Secretary Of The Navy Wafer bonding of thinned electronic materials and circuits to high performance substrates
JP4199504B2 (ja) 2002-09-24 2008-12-17 イーグル工業株式会社 摺動部品及びその製造方法
FR2847075B1 (fr) * 2002-11-07 2005-02-18 Commissariat Energie Atomique Procede de formation d'une zone fragile dans un substrat par co-implantation
FR2848336B1 (fr) 2002-12-09 2005-10-28 Commissariat Energie Atomique Procede de realisation d'une structure contrainte destinee a etre dissociee
FR2850487B1 (fr) * 2002-12-24 2005-12-09 Commissariat Energie Atomique Procede de realisation de substrats mixtes et structure ainsi obtenue
US20040124509A1 (en) * 2002-12-28 2004-07-01 Kim Sarah E. Method and structure for vertically-stacked device contact
US7071077B2 (en) 2003-03-26 2006-07-04 S.O.I.Tec Silicon On Insulator Technologies S.A. Method for preparing a bonding surface of a semiconductor layer of a wafer
FR2855910B1 (fr) * 2003-06-06 2005-07-15 Commissariat Energie Atomique Procede d'obtention d'une couche tres mince par amincissement par auto-portage provoque
FR2857953B1 (fr) 2003-07-21 2006-01-13 Commissariat Energie Atomique Structure empilee, et procede pour la fabriquer
FR2861497B1 (fr) 2003-10-28 2006-02-10 Soitec Silicon On Insulator Procede de transfert catastrophique d'une couche fine apres co-implantation
US7772087B2 (en) 2003-12-19 2010-08-10 Commissariat A L'energie Atomique Method of catastrophic transfer of a thin film after co-implantation
FR2876219B1 (fr) 2004-10-06 2006-11-24 Commissariat Energie Atomique Procede d'elaboration de structures empilees mixtes, a zones isolantes diverses et/ou zones de conduction electrique verticale localisees.
FR2876220B1 (fr) 2004-10-06 2007-09-28 Commissariat Energie Atomique Procede d'elaboration de structures empilees mixtes, a zones isolantes diverses et/ou zones de conduction electrique verticale localisees.
FR2889887B1 (fr) 2005-08-16 2007-11-09 Commissariat Energie Atomique Procede de report d'une couche mince sur un support
FR2891281B1 (fr) 2005-09-28 2007-12-28 Commissariat Energie Atomique Procede de fabrication d'un element en couches minces.
FR2899378B1 (fr) 2006-03-29 2008-06-27 Commissariat Energie Atomique Procede de detachement d'un film mince par fusion de precipites
FR2910179B1 (fr) * 2006-12-19 2009-03-13 Commissariat Energie Atomique PROCEDE DE FABRICATION DE COUCHES MINCES DE GaN PAR IMPLANTATION ET RECYCLAGE D'UN SUBSTRAT DE DEPART
FR2922359B1 (fr) 2007-10-12 2009-12-18 Commissariat Energie Atomique Procede de fabrication d'une structure micro-electronique impliquant un collage moleculaire
FR2925221B1 (fr) 2007-12-17 2010-02-19 Commissariat Energie Atomique Procede de transfert d'une couche mince
FR2947098A1 (fr) 2009-06-18 2010-12-24 Commissariat Energie Atomique Procede de transfert d'une couche mince sur un substrat cible ayant un coefficient de dilatation thermique different de celui de la couche mince

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20020185469A1 (en) * 1999-08-11 2002-12-12 Applied Materials, Inc. Method of micromachining a multi-part cavity
EP1096259A1 (fr) * 1999-11-01 2001-05-02 Samsung Electronics Co., Ltd. Micro-gyroscope encapsulé sous vide très poussé et méthode pour sa fabrication
US6306720B1 (en) * 2000-01-10 2001-10-23 United Microelectronics Corp. Method for forming capacitor of mixed-mode device
US20020000646A1 (en) * 2000-02-02 2002-01-03 Raytheon Company, A Delware Corporation Vacuum package fabrication of integrated circuit components
US6407929B1 (en) * 2000-06-29 2002-06-18 Intel Corporation Electronic package having embedded capacitors and method of fabrication therefor
US20030001221A1 (en) * 2001-02-03 2003-01-02 Frank Fischer Micromechanical component as well as a method for producing a micromechanical component
WO2003021667A2 (fr) * 2001-08-29 2003-03-13 Honeywell International, Inc. Boitier pourvu d'un inducteur et/ou d'un condensateur integres
DE10153319A1 (de) * 2001-10-29 2003-05-15 Austriamicrocsystems Ag Schlos Mikrosensor

Also Published As

Publication number Publication date
WO2005000733A2 (fr) 2005-01-06
EP1636130A2 (fr) 2006-03-22
EP1636130B1 (fr) 2016-05-25
FR2856844B1 (fr) 2006-02-17
US20060252229A1 (en) 2006-11-09
FR2856844A1 (fr) 2004-12-31
US8048766B2 (en) 2011-11-01

Similar Documents

Publication Publication Date Title
WO2005000733A3 (fr) Circuit integre sur puce de hautes performances
KR101075302B1 (ko) 내장된 컴포넌트들 및 스페이서 층을 포함하는 마이크로 전자 기판 및 그 형성 방법
US8030770B1 (en) Substrateless package
WO2004006633A3 (fr) Circuit integre comprenant un transistor a effet de champ et procede de fabrication de celui-ci
TW200723493A (en) Electronic circuit module and manufacturing method thereof
WO2005091366A3 (fr) Module a semi-conducteur avec substrat de couplage et procede de realisation
WO2006055476A3 (fr) Procede d'integration de dispositifs optiques et de dispositifs electroniques sur un circuit integre
WO2000007218A3 (fr) Procede permettant de fabriquer un dispositif a semi-conducteur avec une couche flottant au-dessus d'un substrat
TW200715514A (en) Semiconductor chip, display panel using the same, and methods of manufacturing semiconductor chip and display panel using the same
WO2004059728A3 (fr) Procede de fabrication d'un circuit integre et puce a semi-conducteur associee
WO2007050287A3 (fr) Structure a semi-conducteurs et procede de montage
TW200520042A (en) Semiconductor module containing circuit elements, method for manufacture thereof, and application thereof
WO2005011343A3 (fr) Carte de circuits imprimes a composants incorpores et procede de fabrication de celle-ci
WO2006036965A3 (fr) Reduction du couplage electromagnetique dans les circuits integres
WO2003092045A3 (fr) Procede de production d'un circuit electrique
TW200711544A (en) Flexible circuit substrate and method of manufacturing the same
WO2004003991A3 (fr) Composant electronique encapsule dans un boitier
WO2006036751A3 (fr) Circuit integre et procede de production associe
GB2392560A (en) Manufacture of solid state electronic components
WO2008141898A3 (fr) Procédé de production d'un composant électronique
WO2007043972A8 (fr) Dispositif transportant un circuit intégré ou des composants et son procédé de fabrication
WO2004064152A3 (fr) Composant de construction modulaire a encapsulation
WO2002076717A3 (fr) Fabrication de dispositifs d'identification autoalimentes
WO2004056162A8 (fr) Composant electronique de montage de puces a protuberances et procede de production associe, carte de circuit imprime et procede de production associe, et procede de production d'ensemble
WO2002054839A3 (fr) Cartes imprimees a structure multicouche, et procedes de fabrication

Legal Events

Date Code Title Description
AK Designated states

Kind code of ref document: A2

Designated state(s): AE AG AL AM AT AU AZ BA BB BG BR BW BY BZ CA CH CN CO CR CU CZ DE DK DM DZ EC EE EG ES FI GB GD GE GH GM HR HU ID IL IN IS JP KE KG KP KR KZ LC LK LR LS LT LU LV MA MD MG MK MN MW MX MZ NA NI NO NZ OM PG PH PL PT RO RU SC SD SE SG SK SL SY TJ TM TN TR TT TZ UA UG US UZ VC VN YU ZA ZM ZW

AL Designated countries for regional patents

Kind code of ref document: A2

Designated state(s): BW GH GM KE LS MW MZ NA SD SL SZ TZ UG ZM ZW AM AZ BY KG KZ MD RU TJ TM AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IT LU MC NL PL PT RO SE SI SK TR BF BJ CF CG CI CM GA GN GQ GW ML MR NE SN TD TG

121 Ep: the epo has been informed by wipo that ep was designated in this application
WWE Wipo information: entry into national phase

Ref document number: 2004767421

Country of ref document: EP

WWE Wipo information: entry into national phase

Ref document number: 2006252229

Country of ref document: US

Ref document number: 10561299

Country of ref document: US

WWP Wipo information: published in national office

Ref document number: 2004767421

Country of ref document: EP

WWP Wipo information: published in national office

Ref document number: 10561299

Country of ref document: US