WO2004107352A3 - Use of voids between elements in semiconductor structures for isolation - Google Patents
Use of voids between elements in semiconductor structures for isolation Download PDFInfo
- Publication number
- WO2004107352A3 WO2004107352A3 PCT/US2004/013986 US2004013986W WO2004107352A3 WO 2004107352 A3 WO2004107352 A3 WO 2004107352A3 US 2004013986 W US2004013986 W US 2004013986W WO 2004107352 A3 WO2004107352 A3 WO 2004107352A3
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- elements
- storage elements
- voids
- isolation
- semiconductor structures
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
- H10B41/30—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/7682—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing the dielectric comprising air gaps
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/5222—Capacitive arrangements or effects of, or between wiring layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Abstract
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006532783A JP2007501531A (en) | 2003-05-21 | 2004-05-03 | Use of voids between elements in semiconductor structures for element isolation. |
EP04751389A EP1625616A2 (en) | 2003-05-21 | 2004-05-03 | Use of voids between elements in semiconductor structures for isolation |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/443,502 | 2003-05-21 | ||
US10/443,502 US7045849B2 (en) | 2003-05-21 | 2003-05-21 | Use of voids between elements in semiconductor structures for isolation |
Publications (2)
Publication Number | Publication Date |
---|---|
WO2004107352A2 WO2004107352A2 (en) | 2004-12-09 |
WO2004107352A3 true WO2004107352A3 (en) | 2005-02-03 |
Family
ID=33450432
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US2004/013986 WO2004107352A2 (en) | 2003-05-21 | 2004-05-03 | Use of voids between elements in semiconductor structures for isolation |
Country Status (7)
Country | Link |
---|---|
US (2) | US7045849B2 (en) |
EP (1) | EP1625616A2 (en) |
JP (1) | JP2007501531A (en) |
KR (1) | KR20060017803A (en) |
CN (1) | CN100428440C (en) |
TW (1) | TWI267943B (en) |
WO (1) | WO2004107352A2 (en) |
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- 2004-05-03 EP EP04751389A patent/EP1625616A2/en not_active Withdrawn
- 2004-05-03 KR KR1020057022214A patent/KR20060017803A/en not_active Application Discontinuation
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WO2004107352A2 (en) | 2004-12-09 |
KR20060017803A (en) | 2006-02-27 |
US7569465B2 (en) | 2009-08-04 |
CN100428440C (en) | 2008-10-22 |
US7045849B2 (en) | 2006-05-16 |
JP2007501531A (en) | 2007-01-25 |
CN1791974A (en) | 2006-06-21 |
US20040232496A1 (en) | 2004-11-25 |
TWI267943B (en) | 2006-12-01 |
US20060001073A1 (en) | 2006-01-05 |
TW200509296A (en) | 2005-03-01 |
EP1625616A2 (en) | 2006-02-15 |
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