WO2004102610A3 - Generation of uniformly-distributed plasma - Google Patents

Generation of uniformly-distributed plasma Download PDF

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Publication number
WO2004102610A3
WO2004102610A3 PCT/US2004/013053 US2004013053W WO2004102610A3 WO 2004102610 A3 WO2004102610 A3 WO 2004102610A3 US 2004013053 W US2004013053 W US 2004013053W WO 2004102610 A3 WO2004102610 A3 WO 2004102610A3
Authority
WO
WIPO (PCT)
Prior art keywords
gap
volume
plasma
anode
uniformly
Prior art date
Application number
PCT/US2004/013053
Other languages
French (fr)
Other versions
WO2004102610A2 (en
Inventor
Roman Chistyakov
Original Assignee
Zond Inc
Roman Chistyakov
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=33415550&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=WO2004102610(A3) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Zond Inc, Roman Chistyakov filed Critical Zond Inc
Priority to EP04750797A priority Critical patent/EP1625603A2/en
Publication of WO2004102610A2 publication Critical patent/WO2004102610A2/en
Publication of WO2004102610A3 publication Critical patent/WO2004102610A3/en

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/34Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3402Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
    • H01J37/3405Magnetron sputtering
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34Sputtering
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34Sputtering
    • C23C14/35Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32431Constructional details of the reactor
    • H01J37/3244Gas supply means

Abstract

Methods and apparatus for generating uniformly-distributed plasma are described. A plasma generator according to the invention includes a cathode assembly (204) that is positioned adjacent to an anode (216) and forming a gap (220) there between. A gas source (228) supplies a volume of feed gas and/or a volume of excited atoms to the gap between the cathode assembly and the anode. A power supply (202) generates an electric field across the gap between the cathode assembly and the anode. The electric field ionizes the volume of feed gas and/or the volume of excited atoms that is supplied to the gap, thereby creating a plasma in the gap.
PCT/US2004/013053 2003-05-06 2004-04-27 Generation of uniformly-distributed plasma WO2004102610A2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
EP04750797A EP1625603A2 (en) 2003-05-06 2004-04-27 Generation of uniformly-distributed plasma

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/249,774 US6903511B2 (en) 2003-05-06 2003-05-06 Generation of uniformly-distributed plasma
US10/249,774 2003-05-06

Publications (2)

Publication Number Publication Date
WO2004102610A2 WO2004102610A2 (en) 2004-11-25
WO2004102610A3 true WO2004102610A3 (en) 2005-11-17

Family

ID=33415550

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2004/013053 WO2004102610A2 (en) 2003-05-06 2004-04-27 Generation of uniformly-distributed plasma

Country Status (3)

Country Link
US (2) US6903511B2 (en)
EP (1) EP1625603A2 (en)
WO (1) WO2004102610A2 (en)

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