WO2004102592B1 - Capacitor constructions, and their methods of forming - Google Patents

Capacitor constructions, and their methods of forming

Info

Publication number
WO2004102592B1
WO2004102592B1 PCT/US2004/013963 US2004013963W WO2004102592B1 WO 2004102592 B1 WO2004102592 B1 WO 2004102592B1 US 2004013963 W US2004013963 W US 2004013963W WO 2004102592 B1 WO2004102592 B1 WO 2004102592B1
Authority
WO
WIPO (PCT)
Prior art keywords
intermediate layer
electrically conductive
conductive material
forming
over
Prior art date
Application number
PCT/US2004/013963
Other languages
French (fr)
Other versions
WO2004102592A2 (en
WO2004102592A3 (en
Inventor
Cem Basceri
F Daniel Gealy
Gurtej S Sandhu
Original Assignee
Micron Technology Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Micron Technology Inc filed Critical Micron Technology Inc
Priority to JP2006514294A priority Critical patent/JP4157966B2/en
Priority to EP04751377A priority patent/EP1623453A2/en
Publication of WO2004102592A2 publication Critical patent/WO2004102592A2/en
Publication of WO2004102592A3 publication Critical patent/WO2004102592A3/en
Publication of WO2004102592B1 publication Critical patent/WO2004102592B1/en

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/40—Capacitors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/40—Capacitors
    • H01L28/55—Capacitors with a dielectric comprising a perovskite structure material
    • H01L28/57—Capacitors with a dielectric comprising a perovskite structure material comprising a barrier layer to prevent diffusion of hydrogen or oxygen
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
    • H10B12/03—Making the capacitor or connections thereto
    • H10B12/033—Making the capacitor or connections thereto the capacitor extending over the transistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
    • H10B12/03—Making the capacitor or connections thereto
    • H10B12/033—Making the capacitor or connections thereto the capacitor extending over the transistor
    • H10B12/0335—Making a connection between the transistor and the capacitor, e.g. plug

Abstract

The invention includes methods in which metal oxide dielectric materials (50) are deposited over barrier layers (48). The barrier layers can comprise compositions of metal and one or more of carbon, boron and nitrogen, and the metal oxide of the dielectric material can comprise the same metal as the barrier layer. The dielectric material/barrier layer constructions can be incorporated into capacitors. The capacitors can be used in, for example, DRAM cells, which in turn can be used in electronic systems.

Claims

AMENDED CLAIMS [received by the International Bureau on 20 December 2004 (20.12.04), original claims 1 to 48, 50 to 58, 60 to 62, 64 to 67, 69 to 74 and 76 to 79 cancelled; original claim 49, 59, 63, 68 and 75(3 pages)] The invention claimed is: 1-48 (cancelled).
49. A method of forming a capacitor construction, comprising: providing a semiconductor substrate; forming a first electrically conductive material over the semiconductor substrate; forming an intermediate layer over the first electrically conductive material; the intermediate layer consisting essentially of aluminum carbide; depositing a dielectric layer directly against the intermediate layer, the dielectric layer predominantly comprising a composition of aluminum and oxygen; and forming a second electrically conductive material over the dielectric layer; the second electrically conductive material being capacitively connected with the first electrically conductive material.
50-58 (cancelled).
59. A method of forming a capacitor construction, comprising: providing a semiconductor substrate; forming a first electrically conductive material over the semiconductor substrate; forming a first intermediate layer over the first electrically conductive material, the first intermediate layer consisting essentially of aluminum carbide; depositing a dielectric layer directly against the first intermediate layer, the dielectric layer predominantly comprising a composition of aluminum and oxygen; forming a second intermediate layer over the dielectric layer, the second intermediate layer consisting essentially of aluminum carbide; and forming a second electrically conductive material over the second intermediate layer; the second electrically conductive material being capacitively connected with the first electrically conductive material.
60-62 (cancelled).
63. A method of forming a capacitor construction, comprising: providing a semiconductor substrate; forming a first electrically conductive material over the semiconductor substrate; forming a first intermediate layer over the first electrically conductive material, the first intermediate layer consisting essentially of a lanthanide metal carbide; depositing a dielectric layer directly against the first intermediate layer, the dielectric layer predominantly comprising a composition of the lanthanide metal and oxygen; forming a second intermediate layer over the dielectric layer, the second intermediate layer consisting essentially of the lanthanide metal carbide; and forming a second electrically conductive material over the second intermediate layer; the second electrically conductive material being capacitively connected with the first electrically conductive material.
64-67 (cancelled).
68. A capacitor construction, comprising: a first electrically conductive material; a first intermediate layer over the first electrically conductive material, the first intermediate layer consisting of aluminum carbide; a dielectric material over and directly against the first intermediate layer, the dielectric material consisting of aluminum oxide; a second intermediate layer over the dielectric material, the second intermediate layer consisting of aluminum carbide; and a second electrically conductive material over the second intermediate layer; the second electrically conductive material being capacitively connected with the first electrically conductive material.
69-74 (cancelled).
75. A capacitor construction, comprising: a first electrically conductive material; a first intermediate layer over the first electrically conductive material, the first intermediate layer consisting essentially of aluminum carbide; a dielectric material over and directly against the first intermediate layer, the dielectric material predominantly comprising a composition of aluminum and oxygen; a second intermediate layer over the dielectric material, the second intermediate layer consisting essentially of aluminum carbide; and a second electrically conductive material over the second intermediate layer; the second electrically conductive material being capacitively connected with the first electrically conductive material.
76-79 (cancelled).
PCT/US2004/013963 2003-05-09 2004-05-04 Capacitor constructions, and their methods of forming WO2004102592A2 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2006514294A JP4157966B2 (en) 2003-05-09 2004-05-04 Capacitor structure, method for manufacturing capacitor structure, and method for manufacturing structure including dielectric material
EP04751377A EP1623453A2 (en) 2003-05-09 2004-05-04 Capacitor constructions, and their methods of forming

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/435,103 US6812110B1 (en) 2003-05-09 2003-05-09 Methods of forming capacitor constructions, and methods of forming constructions comprising dielectric materials
US10/435,103 2003-05-09

Publications (3)

Publication Number Publication Date
WO2004102592A2 WO2004102592A2 (en) 2004-11-25
WO2004102592A3 WO2004102592A3 (en) 2005-01-20
WO2004102592B1 true WO2004102592B1 (en) 2005-03-10

Family

ID=33299562

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2004/013963 WO2004102592A2 (en) 2003-05-09 2004-05-04 Capacitor constructions, and their methods of forming

Country Status (7)

Country Link
US (3) US6812110B1 (en)
EP (1) EP1623453A2 (en)
JP (1) JP4157966B2 (en)
KR (1) KR100678012B1 (en)
CN (1) CN100424818C (en)
TW (1) TWI298926B (en)
WO (1) WO2004102592A2 (en)

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FR2844810B1 (en) * 2002-09-24 2004-11-05 Pechiney Rhenalu REFINED ALUMINUM SHEET OR STRIP FOR ELECTROLYTIC CAPACITORS
KR100604672B1 (en) 2004-06-30 2006-07-31 주식회사 하이닉스반도체 CAPACITOR WITH HfN AND METHOD FOR FABRICATING THE SAME
DE102004056654A1 (en) * 2004-11-24 2005-12-08 Infineon Technologies Ag Capacitative element is formed by producing a substrate, forming a structured cover layer on top with at least one trough, applying etch resistant material and precipitating electrode layers
US7927948B2 (en) 2005-07-20 2011-04-19 Micron Technology, Inc. Devices with nanocrystals and methods of formation
US8110469B2 (en) 2005-08-30 2012-02-07 Micron Technology, Inc. Graded dielectric layers
JP2007081265A (en) * 2005-09-16 2007-03-29 Matsushita Electric Ind Co Ltd Semiconductor device and manufacturing method therefor
US7857193B2 (en) * 2005-11-23 2010-12-28 Babcock & Wilcox Technical Services Y-12, Llc Method of forming and assembly of parts
JP2007157829A (en) * 2005-12-01 2007-06-21 Matsushita Electric Ind Co Ltd Semiconductor device
US7892964B2 (en) * 2007-02-14 2011-02-22 Micron Technology, Inc. Vapor deposition methods for forming a metal-containing layer on a substrate
US7977798B2 (en) 2007-07-26 2011-07-12 Infineon Technologies Ag Integrated circuit having a semiconductor substrate with a barrier layer
US7700469B2 (en) * 2008-02-26 2010-04-20 Micron Technology, Inc. Methods of forming semiconductor constructions
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KR20110064269A (en) * 2009-12-07 2011-06-15 삼성전자주식회사 Semiconductor device and method of fabricating the same, and semiconductor module, electronic circuit board and electronic system including the same
JP6676370B2 (en) * 2015-12-25 2020-04-08 新光電気工業株式会社 Wiring board and method of manufacturing wiring board
US10741442B2 (en) * 2018-05-31 2020-08-11 Taiwan Semiconductor Manufacturing Company, Ltd. Barrier layer formation for conductive feature
US11031542B2 (en) 2019-05-02 2021-06-08 International Business Machines Corporation Contact via with pillar of alternating layers
KR20210085161A (en) 2019-12-30 2021-07-08 삼성전자주식회사 Capacitor structure, method of manufacturing the same, semiconductor device including the capacitor structure and method of manufacturing the same

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Also Published As

Publication number Publication date
EP1623453A2 (en) 2006-02-08
KR20060009003A (en) 2006-01-27
JP4157966B2 (en) 2008-10-01
TWI298926B (en) 2008-07-11
US20040224466A1 (en) 2004-11-11
TW200503157A (en) 2005-01-16
CN100424818C (en) 2008-10-08
KR100678012B1 (en) 2007-02-02
WO2004102592A2 (en) 2004-11-25
US7323737B2 (en) 2008-01-29
US6812110B1 (en) 2004-11-02
CN1820352A (en) 2006-08-16
WO2004102592A3 (en) 2005-01-20
JP2006526291A (en) 2006-11-16
US20070026601A1 (en) 2007-02-01
US7129535B2 (en) 2006-10-31
US20040224467A1 (en) 2004-11-11

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