WO2004095696A3 - Temperature compensation for silicon mems resonator - Google Patents

Temperature compensation for silicon mems resonator Download PDF

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Publication number
WO2004095696A3
WO2004095696A3 PCT/US2004/009881 US2004009881W WO2004095696A3 WO 2004095696 A3 WO2004095696 A3 WO 2004095696A3 US 2004009881 W US2004009881 W US 2004009881W WO 2004095696 A3 WO2004095696 A3 WO 2004095696A3
Authority
WO
WIPO (PCT)
Prior art keywords
temperature compensation
mems resonator
silicon mems
compressive
tensile strain
Prior art date
Application number
PCT/US2004/009881
Other languages
French (fr)
Other versions
WO2004095696A2 (en
Inventor
Markus Lutz
Aaron Partridge
Original Assignee
Bosch Gmbh Robert
Markus Lutz
Aaron Partridge
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Bosch Gmbh Robert, Markus Lutz, Aaron Partridge filed Critical Bosch Gmbh Robert
Priority to EP20040759781 priority Critical patent/EP1618658B1/en
Priority to CN2004800090144A priority patent/CN1768475B/en
Priority to CA2513976A priority patent/CA2513976C/en
Priority to JP2006509524A priority patent/JP4589920B2/en
Priority to ES04759781.0T priority patent/ES2538154T3/en
Publication of WO2004095696A2 publication Critical patent/WO2004095696A2/en
Publication of WO2004095696A3 publication Critical patent/WO2004095696A3/en

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Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02244—Details of microelectro-mechanical resonators
    • H03H9/02433—Means for compensation or elimination of undesired effects
    • H03H9/02448—Means for compensation or elimination of undesired effects of temperature influence
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B3/00—Devices comprising flexible or deformable elements, e.g. comprising elastic tongues or membranes
    • B81B3/0064—Constitution or structural means for improving or controlling the physical properties of a device
    • B81B3/0067—Mechanical properties
    • B81B3/0072—For controlling internal stress or strain in moving or flexible elements, e.g. stress compensating layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
    • H01P7/00—Resonators of the waveguide type
    • H01P7/10—Dielectric resonators
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02244—Details of microelectro-mechanical resonators
    • H03H9/02259—Driving or detection means
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02244—Details of microelectro-mechanical resonators
    • H03H9/02338—Suspension means
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02244—Details of microelectro-mechanical resonators
    • H03H9/02393—Post-fabrication trimming of parameters, e.g. resonance frequency, Q factor
    • H03H9/02417—Post-fabrication trimming of parameters, e.g. resonance frequency, Q factor involving adjustment of the transducing gap
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/24—Constructional features of resonators of material which is not piezoelectric, electrostrictive, or magnetostrictive
    • H03H9/2405—Constructional features of resonators of material which is not piezoelectric, electrostrictive, or magnetostrictive of microelectro-mechanical resonators
    • H03H9/2447—Beam resonators
    • H03H9/2457—Clamped-free beam resonators
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/24—Constructional features of resonators of material which is not piezoelectric, electrostrictive, or magnetostrictive
    • H03H9/2405—Constructional features of resonators of material which is not piezoelectric, electrostrictive, or magnetostrictive of microelectro-mechanical resonators
    • H03H9/2447—Beam resonators
    • H03H9/2463—Clamped-clamped beam resonators
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/46—Filters
    • H03H9/54—Filters comprising resonators of piezo-electric or electrostrictive material
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2201/00—Specific applications of microelectromechanical systems
    • B81B2201/02—Sensors
    • B81B2201/0271—Resonators; ultrasonic resonators
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2203/00—Basic microelectromechanical structures
    • B81B2203/01—Suspended structures, i.e. structures allowing a movement
    • B81B2203/0118—Cantilevers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02244—Details of microelectro-mechanical resonators
    • H03H2009/02488—Vibration modes
    • H03H2009/02496—Horizontal, i.e. parallel to the substrate plane
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02244—Details of microelectro-mechanical resonators
    • H03H2009/02488—Vibration modes
    • H03H2009/02511—Vertical, i.e. perpendicular to the substrate plane

Abstract

Thermally induced frequency variations in a micromechanical resonator are actively or passively mitigated by application of a compensating stiffness, or a compressive/tensile strain. Various composition materials may be selected according to their thermal expansion coefficient and used to form resonator components on a substrate. When exposed to temperature variations, the relative expansion of these composition materials creates a compensating stiffness, or a compressive/tensile strain.
PCT/US2004/009881 2003-04-16 2004-03-30 Temperature compensation for silicon mems resonator WO2004095696A2 (en)

Priority Applications (5)

Application Number Priority Date Filing Date Title
EP20040759781 EP1618658B1 (en) 2003-04-16 2004-03-30 Temperature compensation for silicon mems resonator
CN2004800090144A CN1768475B (en) 2003-04-16 2004-03-30 MEMS resonator and its manufacture method
CA2513976A CA2513976C (en) 2003-04-16 2004-03-30 Temperature compensation for silicon mems resonator
JP2006509524A JP4589920B2 (en) 2003-04-16 2004-03-30 Temperature compensation for silicon MEMS resonators
ES04759781.0T ES2538154T3 (en) 2003-04-16 2004-03-30 Temperature compensation for silicon MEMS resonator

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/414,793 US6987432B2 (en) 2003-04-16 2003-04-16 Temperature compensation for silicon MEMS resonator
US10/414,793 2003-04-16

Publications (2)

Publication Number Publication Date
WO2004095696A2 WO2004095696A2 (en) 2004-11-04
WO2004095696A3 true WO2004095696A3 (en) 2005-07-07

Family

ID=33158772

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2004/009881 WO2004095696A2 (en) 2003-04-16 2004-03-30 Temperature compensation for silicon mems resonator

Country Status (8)

Country Link
US (4) US6987432B2 (en)
EP (1) EP1618658B1 (en)
JP (1) JP4589920B2 (en)
KR (1) KR100943777B1 (en)
CN (1) CN1768475B (en)
CA (2) CA2805322C (en)
ES (1) ES2538154T3 (en)
WO (1) WO2004095696A2 (en)

Families Citing this family (116)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6987432B2 (en) * 2003-04-16 2006-01-17 Robert Bosch Gmbh Temperature compensation for silicon MEMS resonator
US7221495B2 (en) * 2003-06-24 2007-05-22 Idc Llc Thin film precursor stack for MEMS manufacturing
US8418196B2 (en) * 2003-06-30 2013-04-09 At&T Intellectual Property I, L.P. Interactive content with enhanced network operator control
TW593126B (en) * 2003-09-30 2004-06-21 Prime View Int Co Ltd A structure of a micro electro mechanical system and manufacturing the same
US20060066932A1 (en) * 2004-09-27 2006-03-30 Clarence Chui Method of selective etching using etch stop layer
US7369296B2 (en) * 2004-09-27 2008-05-06 Idc, Llc Device and method for modifying actuation voltage thresholds of a deformable membrane in an interferometric modulator
US7161730B2 (en) * 2004-09-27 2007-01-09 Idc, Llc System and method for providing thermal compensation for an interferometric modulator display
US7417783B2 (en) * 2004-09-27 2008-08-26 Idc, Llc Mirror and mirror layer for optical modulator and method
US20110068834A1 (en) * 2005-01-07 2011-03-24 Trustees Of Boston University Electro-mechanical oscillating devices and associated methods
CN101103515B (en) * 2005-01-07 2010-10-13 波士顿大学托管委员会 Nanomechanical oscillator
JP4710435B2 (en) * 2005-06-29 2011-06-29 ソニー株式会社 Microresonator, bandpass filter, semiconductor device, and communication device
EP1910218A1 (en) * 2005-07-22 2008-04-16 Qualcomm Mems Technologies, Inc. Mems devices having support structures and methods of fabricating the same
KR20080041663A (en) * 2005-07-22 2008-05-13 콸콤 인코포레이티드 Support structure for mems device and methods therefor
JP2009503565A (en) * 2005-07-22 2009-01-29 クアルコム，インコーポレイテッド Support structure for MEMS device and method thereof
EP2495212A3 (en) * 2005-07-22 2012-10-31 QUALCOMM MEMS Technologies, Inc. Mems devices having support structures and methods of fabricating the same
US7630114B2 (en) * 2005-10-28 2009-12-08 Idc, Llc Diffusion barrier layer for MEMS devices
US7847649B2 (en) * 2005-12-23 2010-12-07 Nxp B.V. MEMS resonator, a method of manufacturing thereof, and a MEMS oscillator
US7382515B2 (en) * 2006-01-18 2008-06-03 Qualcomm Mems Technologies, Inc. Silicon-rich silicon nitrides as etch stops in MEMS manufacture
US7711239B2 (en) 2006-04-19 2010-05-04 Qualcomm Mems Technologies, Inc. Microelectromechanical device and method utilizing nanoparticles
US7623287B2 (en) * 2006-04-19 2009-11-24 Qualcomm Mems Technologies, Inc. Non-planar surface structures and process for microelectromechanical systems
US7405863B2 (en) * 2006-06-01 2008-07-29 Qualcomm Mems Technologies, Inc. Patterning of mechanical layer in MEMS to reduce stresses at supports
US7824098B2 (en) * 2006-06-02 2010-11-02 The Board Of Trustees Of The Leland Stanford Junior University Composite mechanical transducers and approaches therefor
US7806586B2 (en) * 2006-06-02 2010-10-05 The Board Of Trustees Of The Leland Stanford Junior University Composite mechanical transducers and approaches therefor
US7563633B2 (en) * 2006-08-25 2009-07-21 Robert Bosch Gmbh Microelectromechanical systems encapsulation process
WO2008036830A2 (en) * 2006-09-20 2008-03-27 Trustees Of Boston University Nano electromechanical integrated-circuit filter
KR100763093B1 (en) * 2006-09-29 2007-10-04 주식회사 하이닉스반도체 Program method of a flash memory device
CH700716B1 (en) 2006-10-09 2010-10-15 Suisse Electronique Microtech Tuning fork resonator type silicon.
US7545552B2 (en) * 2006-10-19 2009-06-09 Qualcomm Mems Technologies, Inc. Sacrificial spacer process and resultant structure for MEMS support structure
US7859365B2 (en) * 2006-12-13 2010-12-28 Georgia Tech Research Corporation Low frequency process-variation-insensitive temperature-stable micromechanical resonators
US7706042B2 (en) 2006-12-20 2010-04-27 Qualcomm Mems Technologies, Inc. MEMS device and interconnects for same
US7639104B1 (en) * 2007-03-09 2009-12-29 Silicon Clocks, Inc. Method for temperature compensation in MEMS resonators with isolated regions of distinct material
US7591201B1 (en) 2007-03-09 2009-09-22 Silicon Clocks, Inc. MEMS structure having a compensated resonating member
US7956517B1 (en) 2007-05-10 2011-06-07 Silicon Laboratories MEMS structure having a stress inverter temperature-compensated resonator member
US7719752B2 (en) * 2007-05-11 2010-05-18 Qualcomm Mems Technologies, Inc. MEMS structures, methods of fabricating MEMS components on separate substrates and assembly of same
US7625825B2 (en) * 2007-06-14 2009-12-01 Qualcomm Mems Technologies, Inc. Method of patterning mechanical layer for MEMS structures
US8068268B2 (en) * 2007-07-03 2011-11-29 Qualcomm Mems Technologies, Inc. MEMS devices having improved uniformity and methods for making them
JP5122888B2 (en) * 2007-08-27 2013-01-16 セイコーインスツル株式会社 OSCILLATOR, METHOD FOR MANUFACTURING OSCILLATOR, AND OSCILLATOR
JP5112819B2 (en) * 2007-10-31 2013-01-09 セイコーインスツル株式会社 Electrostatic vibrator and oscillator
US20090160581A1 (en) * 2007-12-21 2009-06-25 Paul Merritt Hagelin Temperature Stable MEMS Resonator
US8234774B2 (en) 2007-12-21 2012-08-07 Sitime Corporation Method for fabricating a microelectromechanical system (MEMS) resonator
JP5128296B2 (en) * 2008-01-21 2013-01-23 セイコーインスツル株式会社 Electrostatic vibrator and oscillator
EP2245738B1 (en) * 2008-01-24 2015-06-17 Murata Electronics Oy A micromechanical resonator
US7863079B2 (en) 2008-02-05 2011-01-04 Qualcomm Mems Technologies, Inc. Methods of reducing CD loss in a microelectromechanical device
US7990229B2 (en) 2008-04-01 2011-08-02 Sand9, Inc. Methods and devices for compensating a signal using resonators
US8476809B2 (en) 2008-04-29 2013-07-02 Sand 9, Inc. Microelectromechanical systems (MEMS) resonators and related apparatus and methods
US8410868B2 (en) * 2009-06-04 2013-04-02 Sand 9, Inc. Methods and apparatus for temperature control of devices and mechanical resonating structures
US8044737B2 (en) * 2008-04-29 2011-10-25 Sand9, Inc. Timing oscillators and related methods
US8044736B2 (en) * 2008-04-29 2011-10-25 Sand9, Inc. Timing oscillators and related methods
JP4690436B2 (en) * 2008-05-01 2011-06-01 株式会社半導体理工学研究センター MEMS resonator, MEMS oscillation circuit, and MEMS device
JP5561959B2 (en) * 2008-06-25 2014-07-30 セイコーインスツル株式会社 Electrostatic vibrator and electronic equipment
JP5101410B2 (en) * 2008-06-27 2012-12-19 セイコーインスツル株式会社 Resonant frequency variable MEMS vibrator
FR2933824B1 (en) * 2008-07-11 2010-08-13 St Microelectronics Sa RESONATOR WITH VOLUME WAVES
US7999635B1 (en) 2008-07-29 2011-08-16 Silicon Laboratories Inc. Out-of plane MEMS resonator with static out-of-plane deflection
US8111108B2 (en) * 2008-07-29 2012-02-07 Sand9, Inc. Micromechanical resonating devices and related methods
US7918565B2 (en) * 2008-07-31 2011-04-05 Christie Digital Systems Usa, Inc. Expanding chassis for imaging systems
US7889030B2 (en) * 2008-08-07 2011-02-15 Infineon Technologies Ag Passive temperature compensation of silicon MEMS devices
US7944124B1 (en) * 2008-08-29 2011-05-17 Silicon Laboratories Inc. MEMS structure having a stress-inducer temperature-compensated resonator member
US7888843B2 (en) * 2008-09-10 2011-02-15 Georgia Tech Research Corporation Thin-film piezoelectric-on-insulator resonators having perforated resonator bodies therein
JP5407765B2 (en) * 2008-11-20 2014-02-05 富士通株式会社 Oscillator and semiconductor device
US8541850B2 (en) * 2008-12-12 2013-09-24 Texas Instruments Incorporated Method and system for forming resonators over CMOS
US8689426B2 (en) 2008-12-17 2014-04-08 Sand 9, Inc. Method of manufacturing a resonating structure
EP2377244A4 (en) * 2008-12-17 2013-09-18 Sand 9 Inc Multi-port mechanical resonating devices and related methods
WO2010077313A1 (en) 2008-12-17 2010-07-08 Sand9, Inc. Mechanical resonating structures including a temperature compensation structure
WO2010073213A2 (en) 2008-12-23 2010-07-01 Nxp B.V. Circuit for compensating influence of temperature on a resonator
US8040207B2 (en) 2009-01-15 2011-10-18 Infineon Technologies Ag MEMS resonator devices with a plurality of mass elements formed thereon
US7939990B2 (en) * 2009-01-30 2011-05-10 Integrated Device Technology, Inc. Thin-film bulk acoustic resonators having perforated bodies that provide reduced susceptibility to process-induced lateral dimension variations
US9048811B2 (en) 2009-03-31 2015-06-02 Sand 9, Inc. Integration of piezoelectric materials with substrates
US8183944B2 (en) * 2009-04-03 2012-05-22 Invensense, Inc. Method and system for using a MEMS structure as a timing source
FR2946478A1 (en) * 2009-06-08 2010-12-10 St Microelectronics Sa RESONATOR WITH VOLUME WAVES.
EP2443745A1 (en) * 2009-06-19 2012-04-25 Georgia Tech Research Corporation Methods of forming micromechanical resonators having high density trench arrays therein that provide passive temperature compensation
US8106724B1 (en) 2009-07-23 2012-01-31 Integrated Device Technologies, Inc. Thin-film bulk acoustic resonators having perforated resonator body supports that enhance quality factor
EP2302792B1 (en) * 2009-09-22 2012-11-14 Nxp B.V. Resonator
EP2339748B1 (en) * 2009-09-28 2018-12-19 Nxp B.V. Resonator
FI20095988A0 (en) * 2009-09-28 2009-09-28 Valtion Teknillinen Micromechanical resonator and method of manufacture thereof
EP2337221A1 (en) * 2009-12-15 2011-06-22 The Swatch Group Research and Development Ltd. Resonator thermocompensated at least to the first and second orders
US8228127B2 (en) 2009-12-23 2012-07-24 Sand 9, Inc. Oscillators having arbitrary frequencies and related systems and methods
US20110175492A1 (en) * 2010-01-21 2011-07-21 Imec Temperature Compensation Device and Method for MEMS Resonator
EP2362199A1 (en) 2010-02-26 2011-08-31 Imec Temperature measurement system comprising a resonant mems device
US8661899B2 (en) 2010-03-01 2014-03-04 Sand9, Inc. Microelectromechanical gyroscopes and related apparatus and methods
WO2011133682A1 (en) 2010-04-20 2011-10-27 Guiti Zolfagharkhani Microelectromechanical gyroscopes and related apparatus and methods
EP2395661A1 (en) * 2010-06-10 2011-12-14 The Swatch Group Research and Development Ltd. Resonator with temperature compensation of thermal coefficients of first and second order
EP2395660B1 (en) * 2010-06-10 2013-08-14 Nxp B.V. MEMS resonators
US9075077B2 (en) 2010-09-20 2015-07-07 Analog Devices, Inc. Resonant sensing using extensional modes of a plate
JP2012178711A (en) * 2011-02-25 2012-09-13 Sanyo Electric Co Ltd Mems resonator
US8501515B1 (en) 2011-02-25 2013-08-06 Integrated Device Technology Inc. Methods of forming micro-electromechanical resonators using passive compensation techniques
US8700199B2 (en) * 2011-03-21 2014-04-15 International Business Machines Corporation Passive resonator, a system incorporating the passive resonator for real-time intra-process monitoring and control and an associated method
US8659816B2 (en) 2011-04-25 2014-02-25 Qualcomm Mems Technologies, Inc. Mechanical layer and methods of making the same
FI123933B (en) * 2011-05-13 2013-12-31 Teknologian Tutkimuskeskus Vtt A micromechanical device and method for its design
US8471641B2 (en) 2011-06-30 2013-06-25 Silicon Laboratories Inc. Switchable electrode for power handling
US8643140B2 (en) * 2011-07-11 2014-02-04 United Microelectronics Corp. Suspended beam for use in MEMS device
US9431993B1 (en) * 2011-09-26 2016-08-30 Micrel, Incorporated Temperature compensated resonator with a pair of spaced apart internal dielectric layers
US8878633B1 (en) * 2011-09-27 2014-11-04 Micrel, Incorporated Vertical differential resonator
US8610336B1 (en) 2011-09-30 2013-12-17 Integrated Device Technology Inc Microelectromechanical resonators having resistive heating elements therein configured to provide frequency tuning through convective heating of resonator bodies
US9383208B2 (en) 2011-10-13 2016-07-05 Analog Devices, Inc. Electromechanical magnetometer and applications thereof
CH705679B1 (en) * 2011-10-28 2017-01-31 Swatch Group Res & Dev Ltd A circuit for self-regulating the oscillation frequency of an oscillating mechanical system, and a device comprising the same.
US9695036B1 (en) 2012-02-02 2017-07-04 Sitime Corporation Temperature insensitive resonant elements and oscillators and methods of designing and manufacturing same
WO2014006172A1 (en) * 2012-07-05 2014-01-09 Koc Universitesi A tunable nanomechanical oscillator and a production method thereof
TWI522307B (en) 2013-03-25 2016-02-21 財團法人工業技術研究院 Composite micro electro mechanical system device and manufacturing method thereof
TWI538396B (en) * 2013-05-20 2016-06-11 國立清華大學 Microelectromechanical resonator active temperature compensation method and resonator thereof
US9712128B2 (en) 2014-02-09 2017-07-18 Sitime Corporation Microelectromechanical resonator
US9705470B1 (en) 2014-02-09 2017-07-11 Sitime Corporation Temperature-engineered MEMS resonator
JP6587681B2 (en) * 2014-10-03 2019-10-09 テクノロギアン トゥトキムスケスクス ヴェーテーテー オイ Temperature compensated beam resonator
EP3202034B1 (en) * 2014-10-03 2020-05-06 Teknologian Tutkimuskeskus VTT OY Temperature compensated compound resonator
CN105932976B (en) * 2016-05-25 2018-07-27 电子科技大学 A kind of temperature-compensation circuit for crystal oscillator
US10676349B1 (en) 2016-08-12 2020-06-09 Sitime Corporation MEMS resonator
US10800649B2 (en) 2016-11-28 2020-10-13 Analog Devices International Unlimited Company Planar processing of suspended microelectromechanical systems (MEMS) devices
CN106525372B (en) * 2016-12-16 2019-11-22 中国计量科学研究院 A kind of resonant mode high acceleration vibration generating arrangement
IT201700057094A1 (en) 2017-05-25 2018-11-25 St Microelectronics Srl MICRO-ELECTRO-MECHANICAL DEVICE WITH REDUCED SENSITIVITY TO TEMPERATURE AND RELATIVE PROCESS OF MANUFACTURE
US10901021B2 (en) * 2018-02-27 2021-01-26 Applied Materials, Inc. Method for detecting wafer processing parameters with micro resonator array sensors
CN108534942A (en) * 2018-03-28 2018-09-14 西南交通大学 A kind of minute-pressure resistive sensor vibration and temperature interference compensation model and system
US10843920B2 (en) 2019-03-08 2020-11-24 Analog Devices International Unlimited Company Suspended microelectromechanical system (MEMS) devices
CN109883565B (en) * 2019-03-13 2020-10-13 中国电子科技集团公司第四十九研究所 Silicon micro-resonance type temperature sensitive chip based on SOI
CN111498792A (en) * 2020-04-22 2020-08-07 西北工业大学 Rigidity adjusting method of MEMS device
WO2021248029A1 (en) * 2020-06-04 2021-12-09 Quick Tube Medical, Llc Method and apparatus for treating tension pneumothorax using a rapid deployment chest port
CN113358899B (en) * 2021-04-26 2023-08-15 中国科学院空天信息创新研究院 Accelerometer and temperature self-compensation method thereof
WO2023129468A1 (en) * 2021-12-31 2023-07-06 Sitime Corporation Suspension for resonators and mems devices

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5640133A (en) * 1995-06-23 1997-06-17 Cornell Research Foundation, Inc. Capacitance based tunable micromechanical resonators
US6199874B1 (en) * 1993-05-26 2001-03-13 Cornell Research Foundation Inc. Microelectromechanical accelerometer for automotive applications
US6278337B1 (en) * 1997-10-24 2001-08-21 Stmicroelectronics, Inc. Integrated released beam oscillator and associated methods
US6504641B2 (en) * 2000-12-01 2003-01-07 Agere Systems Inc. Driver and method of operating a micro-electromechanical system device
US6604425B1 (en) * 2000-06-09 2003-08-12 Hrl Laboratories, Llc Microelectromechanical correlation device and method
US6635940B1 (en) * 2002-04-23 2003-10-21 Hewlett-Packard Development Company, L.P. Micro-electromechanical actuator and methods of use
US6713938B2 (en) * 1999-01-14 2004-03-30 The Regents Of The University Of Michigan Method and apparatus for filtering signals utilizing a vibrating micromechanical resonator

Family Cites Families (38)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5479921A (en) * 1992-06-17 1996-01-02 Reif; Jeanne B. Endotracheal tube stabilizer
US5491604A (en) 1992-12-11 1996-02-13 The Regents Of The University Of California Q-controlled microresonators and tunable electronic filters using such resonators
DE4317274A1 (en) * 1993-05-25 1994-12-01 Bosch Gmbh Robert Process for the production of surface-micromechanical structures
US5616514A (en) * 1993-06-03 1997-04-01 Robert Bosch Gmbh Method of fabricating a micromechanical sensor
US5922212A (en) * 1995-06-08 1999-07-13 Nippondenso Co., Ltd Semiconductor sensor having suspended thin-film structure and method for fabricating thin-film structure body
US5729075A (en) 1995-06-12 1998-03-17 National Semiconductor Corporation Tuneable microelectromechanical system resonator
JP3361916B2 (en) * 1995-06-28 2003-01-07 シャープ株式会社 Method of forming microstructure
DE19643342A1 (en) * 1996-10-21 1998-04-30 Bosch Gmbh Robert Method and device for measuring a physical quantity
US6557419B1 (en) * 1996-12-31 2003-05-06 Honeywell International Inc. Zero TCF thin film resonator
US5783973A (en) 1997-02-24 1998-07-21 The Charles Stark Draper Laboratory, Inc. Temperature insensitive silicon oscillator and precision voltage reference formed therefrom
US6211598B1 (en) * 1999-09-13 2001-04-03 Jds Uniphase Inc. In-plane MEMS thermal actuator and associated fabrication methods
FI113146B (en) * 1999-10-19 2004-02-27 Setec Oy Authentication Message Processing Method, Telephone System, Authentication Center, Subscriber Unit, and SIM Card
JP4745575B2 (en) * 1999-11-02 2011-08-10 ウーテーアー・エス・アー・マニファクチュール・オロロジェール・スイス Time reference with integrated micromechanical ring transducer
US6396368B1 (en) * 1999-11-10 2002-05-28 Hrl Laboratories, Llc CMOS-compatible MEM switches and method of making
US6355534B1 (en) * 2000-01-26 2002-03-12 Intel Corporation Variable tunable range MEMS capacitor
US6445106B1 (en) * 2000-02-18 2002-09-03 Intel Corporation Micro-electromechanical structure resonator, method of making, and method of using
US6586836B1 (en) * 2000-03-01 2003-07-01 Intel Corporation Process for forming microelectronic packages and intermediate structures formed therewith
DE10013424A1 (en) 2000-03-17 2001-09-20 Bosch Gmbh Robert Filter for electrical signals, has two separated terminals for signal output corresponding to opposite-phase oscillating parts
US6890829B2 (en) * 2000-10-24 2005-05-10 Intel Corporation Fabrication of on-package and on-chip structure using build-up layer process
US20020074897A1 (en) * 2000-12-15 2002-06-20 Qing Ma Micro-electromechanical structure resonator frequency adjustment using radient energy trimming and laser/focused ion beam assisted deposition
US6593672B2 (en) * 2000-12-22 2003-07-15 Intel Corporation MEMS-switched stepped variable capacitor and method of making same
US6600389B2 (en) * 2001-05-30 2003-07-29 Intel Corporation Tapered structures for generating a set of resonators with systematic resonant frequencies
US6747389B2 (en) * 2001-06-11 2004-06-08 Intel Corporation Apparatus for adjusting the resonance frequency of a microelectromechanical (MEMS) resonator using tensile/compressive strain and applications therefor
US6573822B2 (en) * 2001-06-18 2003-06-03 Intel Corporation Tunable inductor using microelectromechanical switches
US7005314B2 (en) * 2001-06-27 2006-02-28 Intel Corporation Sacrificial layer technique to make gaps in MEMS applications
US6570468B2 (en) * 2001-06-29 2003-05-27 Intel Corporation Resonator frequency correction by modifying support structures
US6529093B2 (en) * 2001-07-06 2003-03-04 Intel Corporation Microelectromechanical (MEMS) switch using stepped actuation electrodes
US6958566B2 (en) * 2001-08-16 2005-10-25 The Regents Of The University Of Michigan Mechanical resonator device having phenomena-dependent electrical stiffness
US6531668B1 (en) * 2001-08-30 2003-03-11 Intel Corporation High-speed MEMS switch with high-resonance-frequency beam
US6808954B2 (en) * 2001-09-07 2004-10-26 Intel Corporation Vacuum-cavity MEMS resonator
US6630871B2 (en) * 2001-09-28 2003-10-07 Intel Corporation Center-mass-reduced microbridge structures for ultra-high frequency MEM resonator
US6750078B2 (en) * 2001-11-02 2004-06-15 Intel Corporation MEMS switch having hexsil beam and method of integrating MEMS switch with a chip
US6822535B2 (en) * 2001-12-17 2004-11-23 Intel Corporation Film bulk acoustic resonator structure and method of making
JP3747859B2 (en) * 2002-02-06 2006-02-22 ソニー株式会社 Image processing apparatus and method
US6588836B1 (en) * 2002-05-16 2003-07-08 Albert Chong-Jen Lo Chaise longue
US6800503B2 (en) * 2002-11-20 2004-10-05 International Business Machines Corporation MEMS encapsulated structure and method of making same
US6987432B2 (en) * 2003-04-16 2006-01-17 Robert Bosch Gmbh Temperature compensation for silicon MEMS resonator
US7068125B2 (en) * 2004-03-04 2006-06-27 Robert Bosch Gmbh Temperature controlled MEMS resonator and method for controlling resonator frequency

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6199874B1 (en) * 1993-05-26 2001-03-13 Cornell Research Foundation Inc. Microelectromechanical accelerometer for automotive applications
US5640133A (en) * 1995-06-23 1997-06-17 Cornell Research Foundation, Inc. Capacitance based tunable micromechanical resonators
US6278337B1 (en) * 1997-10-24 2001-08-21 Stmicroelectronics, Inc. Integrated released beam oscillator and associated methods
US6713938B2 (en) * 1999-01-14 2004-03-30 The Regents Of The University Of Michigan Method and apparatus for filtering signals utilizing a vibrating micromechanical resonator
US6604425B1 (en) * 2000-06-09 2003-08-12 Hrl Laboratories, Llc Microelectromechanical correlation device and method
US6504641B2 (en) * 2000-12-01 2003-01-07 Agere Systems Inc. Driver and method of operating a micro-electromechanical system device
US6635940B1 (en) * 2002-04-23 2003-10-21 Hewlett-Packard Development Company, L.P. Micro-electromechanical actuator and methods of use

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