WO2004093141A3 - Methods for producing light emitting device - Google Patents

Methods for producing light emitting device Download PDF

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Publication number
WO2004093141A3
WO2004093141A3 PCT/US2004/010877 US2004010877W WO2004093141A3 WO 2004093141 A3 WO2004093141 A3 WO 2004093141A3 US 2004010877 W US2004010877 W US 2004010877W WO 2004093141 A3 WO2004093141 A3 WO 2004093141A3
Authority
WO
WIPO (PCT)
Prior art keywords
layer
methods
light emitting
emitting device
producing light
Prior art date
Application number
PCT/US2004/010877
Other languages
French (fr)
Other versions
WO2004093141A2 (en
Inventor
Alexei A Erchak
John W Graff
Michael Gregory Brown
Scott W Duncan
Milan Singh Minsky
Original Assignee
Luminus Devices Inc
Alexei A Erchak
John W Graff
Michael Gregory Brown
Scott W Duncan
Milan Singh Minsky
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US10/724,005 external-priority patent/US7083993B2/en
Priority claimed from US10/723,987 external-priority patent/US7211831B2/en
Priority claimed from US10/724,015 external-priority patent/US7521854B2/en
Priority claimed from US10/724,029 external-priority patent/US7098589B2/en
Priority claimed from US10/724,006 external-priority patent/US7084434B2/en
Priority claimed from US10/724,004 external-priority patent/US6831302B2/en
Priority claimed from US10/724,033 external-priority patent/US7262550B2/en
Priority claimed from US10/735,498 external-priority patent/US7166871B2/en
Application filed by Luminus Devices Inc, Alexei A Erchak, John W Graff, Michael Gregory Brown, Scott W Duncan, Milan Singh Minsky filed Critical Luminus Devices Inc
Publication of WO2004093141A2 publication Critical patent/WO2004093141A2/en
Publication of WO2004093141A3 publication Critical patent/WO2004093141A3/en

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0083Periodic patterns for optical field-shaping in or on the semiconductor body or semiconductor body package, e.g. photonic bandgap structures
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005Processes
    • H01L33/0093Wafer bonding; Removal of the growth substrate
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00Semiconductor device manufacturing: process
    • Y10S438/942Masking
    • Y10S438/948Radiation resist
    • Y10S438/95Multilayer mask including nonradiation sensitive layer
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00Semiconductor device manufacturing: process
    • Y10S438/956Making multiple wavelength emissive device

Abstract

A method includes disposing a planarization layer on a surface of a layer of semiconductor material and disposing a lithography layer on a surface of the planarization layer. The method also includes performing nanolithopaphy to remove at least a portion of the planarization layer, at least a portion of the lithopaphy layer and at least a portion of the layer of semiconductor material, thereby forming a dielectric function in the surface of the layer of semiconductor material that varies spatially according to a predefined pattern.
PCT/US2004/010877 2003-04-15 2004-04-08 Methods for producing light emitting device WO2004093141A2 (en)

Applications Claiming Priority (38)

Application Number Priority Date Filing Date Title
US46288903P 2003-04-15 2003-04-15
US60/462,889 2003-04-15
US47419903P 2003-05-29 2003-05-29
US60/474,199 2003-05-29
US47568203P 2003-06-04 2003-06-04
US60/475,682 2003-06-04
US50367103P 2003-09-17 2003-09-17
US50365403P 2003-09-17 2003-09-17
US50367203P 2003-09-17 2003-09-17
US50365303P 2003-09-17 2003-09-17
US50366103P 2003-09-17 2003-09-17
US60/503,672 2003-09-17
US60/503,654 2003-09-17
US60/503,671 2003-09-17
US60/503,653 2003-09-17
US60/503,661 2003-09-17
US51380703P 2003-10-23 2003-10-23
US60/513,807 2003-10-23
US51476403P 2003-10-27 2003-10-27
US60/514,764 2003-10-27
US10/724,015 2003-11-26
US10/724,029 2003-11-26
US10/724,005 US7083993B2 (en) 2003-04-15 2003-11-26 Methods of making multi-layer light emitting devices
US10/724,004 2003-11-26
US10/723,987 2003-11-26
US10/724,033 2003-11-26
US10/723,987 US7211831B2 (en) 2003-04-15 2003-11-26 Light emitting device with patterned surfaces
US10/724,015 US7521854B2 (en) 2003-04-15 2003-11-26 Patterned light emitting devices and extraction efficiencies related to the same
US10/724,006 2003-11-26
US10/724,029 US7098589B2 (en) 2003-04-15 2003-11-26 Light emitting devices with high light collimation
US10/724,006 US7084434B2 (en) 2003-04-15 2003-11-26 Uniform color phosphor-coated light-emitting diode
US10/724,005 2003-11-26
US10/724,004 US6831302B2 (en) 2003-04-15 2003-11-26 Light emitting devices with improved extraction efficiency
US10/724,033 US7262550B2 (en) 2003-04-15 2003-11-26 Light emitting diode utilizing a physical pattern
US10/735,498 US7166871B2 (en) 2003-04-15 2003-12-12 Light emitting systems
US10/735,498 2003-12-12
US10/794,452 US7074631B2 (en) 2003-04-15 2004-03-05 Light emitting device methods
US10/794,452 2004-03-05

Publications (2)

Publication Number Publication Date
WO2004093141A2 WO2004093141A2 (en) 2004-10-28
WO2004093141A3 true WO2004093141A3 (en) 2005-12-08

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2004/010877 WO2004093141A2 (en) 2003-04-15 2004-04-08 Methods for producing light emitting device

Country Status (3)

Country Link
US (2) US7074631B2 (en)
TW (1) TWI404225B (en)
WO (1) WO2004093141A2 (en)

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US7074631B2 (en) 2006-07-11
TW200524179A (en) 2005-07-16

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