WO2004092566B1 - Metal seal packaging for organic light emitting diode device - Google Patents
Metal seal packaging for organic light emitting diode deviceInfo
- Publication number
- WO2004092566B1 WO2004092566B1 PCT/US2004/010664 US2004010664W WO2004092566B1 WO 2004092566 B1 WO2004092566 B1 WO 2004092566B1 US 2004010664 W US2004010664 W US 2004010664W WO 2004092566 B1 WO2004092566 B1 WO 2004092566B1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- metal
- light emitting
- emitting diode
- organic light
- diode device
- Prior art date
Links
- 229910052751 metal Inorganic materials 0.000 title claims abstract 36
- 239000002184 metal Substances 0.000 title claims abstract 36
- 238000004806 packaging method and process Methods 0.000 title 1
- 239000000758 substrate Substances 0.000 claims abstract 24
- 229910000679 solder Inorganic materials 0.000 claims abstract 11
- 229910045601 alloy Inorganic materials 0.000 claims abstract 7
- 239000000956 alloy Substances 0.000 claims abstract 7
- 230000008018 melting Effects 0.000 claims abstract 5
- 238000002844 melting Methods 0.000 claims abstract 5
- 239000011521 glass Substances 0.000 claims 40
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims 8
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical group [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims 6
- 229910052757 nitrogen Inorganic materials 0.000 claims 4
- 239000000463 material Substances 0.000 claims 3
- 229910052759 nickel Inorganic materials 0.000 claims 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims 2
- QVQLCTNNEUAWMS-UHFFFAOYSA-N barium oxide Chemical compound [Ba]=O QVQLCTNNEUAWMS-UHFFFAOYSA-N 0.000 claims 2
- CJNBYAVZURUTKZ-UHFFFAOYSA-N hafnium(iv) oxide Chemical compound O=[Hf]=O CJNBYAVZURUTKZ-UHFFFAOYSA-N 0.000 claims 2
- 229910052738 indium Inorganic materials 0.000 claims 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims 2
- 229910001092 metal group alloy Inorganic materials 0.000 claims 2
- IATRAKWUXMZMIY-UHFFFAOYSA-N strontium oxide Chemical compound [O-2].[Sr+2] IATRAKWUXMZMIY-UHFFFAOYSA-N 0.000 claims 2
- 229910052718 tin Inorganic materials 0.000 claims 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims 1
- 229910000831 Steel Inorganic materials 0.000 claims 1
- MCMNRKCIXSYSNV-UHFFFAOYSA-N ZrO2 Inorganic materials O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 claims 1
- KUQWSGZKODCWTK-UHFFFAOYSA-N [Ag].[Ni].[Cr] Chemical compound [Ag].[Ni].[Cr] KUQWSGZKODCWTK-UHFFFAOYSA-N 0.000 claims 1
- PQLZZALLLYUAKL-UHFFFAOYSA-N [Au].[Cr].[Ni] Chemical compound [Au].[Cr].[Ni] PQLZZALLLYUAKL-UHFFFAOYSA-N 0.000 claims 1
- QQMBHAVGDGCSGY-UHFFFAOYSA-N [Ti].[Ni].[Ag] Chemical compound [Ti].[Ni].[Ag] QQMBHAVGDGCSGY-UHFFFAOYSA-N 0.000 claims 1
- PMRMTSSYYVAROU-UHFFFAOYSA-N [Ti].[Ni].[Au] Chemical compound [Ti].[Ni].[Au] PMRMTSSYYVAROU-UHFFFAOYSA-N 0.000 claims 1
- VXAUWWUXCIMFIM-UHFFFAOYSA-M aluminum;oxygen(2-);hydroxide Chemical compound [OH-].[O-2].[Al+3] VXAUWWUXCIMFIM-UHFFFAOYSA-M 0.000 claims 1
- BRPQOXSCLDDYGP-UHFFFAOYSA-N calcium oxide Chemical compound [O-2].[Ca+2] BRPQOXSCLDDYGP-UHFFFAOYSA-N 0.000 claims 1
- 239000000292 calcium oxide Substances 0.000 claims 1
- ODINCKMPIJJUCX-UHFFFAOYSA-N calcium oxide Inorganic materials [Ca]=O ODINCKMPIJJUCX-UHFFFAOYSA-N 0.000 claims 1
- XRBURMNBUVEAKD-UHFFFAOYSA-N chromium copper nickel Chemical compound [Cr].[Ni].[Cu] XRBURMNBUVEAKD-UHFFFAOYSA-N 0.000 claims 1
- 230000005496 eutectics Effects 0.000 claims 1
- 229920002457 flexible plastic Polymers 0.000 claims 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims 1
- 229910052737 gold Inorganic materials 0.000 claims 1
- 239000010931 gold Substances 0.000 claims 1
- 239000004973 liquid crystal related substance Substances 0.000 claims 1
- ORUIBWPALBXDOA-UHFFFAOYSA-L magnesium fluoride Chemical compound [F-].[F-].[Mg+2] ORUIBWPALBXDOA-UHFFFAOYSA-L 0.000 claims 1
- 229910001635 magnesium fluoride Inorganic materials 0.000 claims 1
- 239000000395 magnesium oxide Substances 0.000 claims 1
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 claims 1
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 claims 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims 1
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 claims 1
- 239000000377 silicon dioxide Substances 0.000 claims 1
- 235000012239 silicon dioxide Nutrition 0.000 claims 1
- 229910052709 silver Inorganic materials 0.000 claims 1
- 239000004332 silver Substances 0.000 claims 1
- 239000010935 stainless steel Substances 0.000 claims 1
- 229910001220 stainless steel Inorganic materials 0.000 claims 1
- 239000010959 steel Substances 0.000 claims 1
- 239000004408 titanium dioxide Substances 0.000 claims 1
- 238000004320 controlled atmosphere Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/84—Passivation; Containers; Encapsulations
- H10K50/846—Passivation; Containers; Encapsulations comprising getter material or desiccants
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/84—Passivation; Containers; Encapsulations
- H10K50/842—Containers
- H10K50/8423—Metallic sealing arrangements
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/84—Passivation; Containers; Encapsulations
- H10K50/842—Containers
- H10K50/8426—Peripheral sealing arrangements, e.g. adhesives, sealants
Abstract
A metal sealed organic light emitting diode device (Fig. 7) comprising a lid (79), containing a recessed portion (83) to accommodate large quantity of getter/dessicant (57, 82, 93), a band (45) of metal stack at the perimeter over which is laid a band of low temperature melting solder alloy, pre-tinned subsequently, and a substrate (71) containing organic light emitting diode (46) at the central area with a band (45) of metal stack at the perimeter. The lid (79) and the substrate (71) are placed together in substantial alignment such that the pre-tinned low melting solder band of the lid contacts the metal stack of the substrate and thermally sealed in a controlled atmosphere. Multiples of substrates are sealed with a single lid containing multiplicity of recessed portions (91) with multi-segmented metal stack and pre-tinned solder band (92) to derive a large area device.
Claims
1. A metal sealed Organic Light Emitting Diode device comprising: a flat top glass lid member having two surfaces of which inner surface has a central recessed portion, the said recessed portion providing a reservoir space for getter and dessicant, the said dessicant and getter laid flat on the said recessed portion to be in strong bond with the surface of the said recessed porϋon, a band of metal stack laid flat at the perimeter of the inner surface of said glass lid member so as to be in strong bond with the said inner surface of the glass lid member, a low temperature melting solder metal alloy laid flat on the said metal stack and pre-tinned to be in strong bond with the said metal stack; a bottom glass substrate member having two surfaces of which the inner surface, centrally containing a transparent anode and an active organic light emitting diode device, faces the inner surface of the said glass lid member, the inner surface of the said glass substrate member further containing a band of dielectric layer laid at the perimeter of the inner surface of the said glass substrate member to be in strong bond with the transparent anode and inner surface of the said glass substrate member, a band of metal stack laid over the said dielectric layer forming a strong bond with the dielectric layer; said glass lid member and said glass substrate member placed in contact with their inner surfaces facing each other inside a Nitrogen controlled environment; said band of metal stack of said glass substrate member and pre-tinned band of said solder alloy of said glass lid member contacting their surfaces in substantial alignment; said glass lid member and glass substrate member thermally sealed in substantial alignment through the said solder alloy, enclosing pure Nitrogen.
2. A metal sealed organic light emitting diode device as claimed in claim 1 wherein the surface of the recessed portion of glass lid, contained in the said inner surface of the said top glass lid member, is sand-blasted to increase the surface area over which the dessicant is laid.
3. A metal sealed organic light emitting diode device as claimed in claim 1 where in the lid member is made of metal and the recessed portion of the metal is welded with metallic screen mesh to hold large quantity of dessicant.
4. A metal sealed organic light emitting diode device as claimed in claim 2 and 3 wherein the dessicant is composed of Calcium Oxide or Barium Oxide or Strontium Oxide or Aluminum Oxide or Magnesium Oxide or combinations of all these Oxides.
5. A metal sealed organic light emitting diode device as claimed in claim 1 wherein the said metal stack on the inner surfaces of both the said top glass lid member and said bottom glass substrate member comprises Chromium - Copper - Nickel or Chromium - Nickel - Silver or Chromium - Nickel - Gold or Titanium - Nickel - Silver or Titanium - Nickel - Gold or Silver mixed frit glass.
6. A metal sealed organic light emitting diode device as claimed in claim 5 wherein the thickness of the bottom metal layer in contact with the inner surfaces of said top glass lid member and the said bottom glass substrate is in the range between 500 Angstroms and 5000 Angstroms, the middle layer, in contact with the said bottom layer, between 2000 Angstroms and 7000 Angstroms and the top layer, in contact with the middle layer, between 5000 Angstroms and 150000 Angstroms.
7. A metal sealed organic light emitting diode device as claimed in claim 1 wherein the material of low temperature melting solder alloy is composed 21
of a combination of Indium and Tin or Indium, Tin and Lead in eutectic proportions.
8. A metal sealed organic light emitting diode device as claimed in claim 1 wherein the said dielectric layer is composed of silicon dioxide or titanium dioxide or zirconium dioxide or aluminum dioxide or hafnium dioxide or Magnesium fluoride or combinations of these oxides or fused frit glass.
9. A metal sealed organic light emitting diode device as claimed in claim 8 wherein the said dielectric layer has thickness in the range between 1 micron and 15 micron.
10. A metal sealed organic light emitting diode device as claimed in claim 1 wherein the glass substrate member can be made of flexible plastic material.
11. A metal sealed organic light emitting diode device as claimed in claim 1 wherein the width of the said metal stack, on the inner surfaces of both the said top glass lid member and said bottom glass substrate member, is between 0.1 mm and 2mm and the width of solder alloy is 0. mm and 2 mm.
12. A large area metal sealed flat organic light emitting diode device comprising: a flat top glass lid member having two surfaces of which inner surface has plurality of N centrally recessed portions, the said plurality of N recessed portions providing a reservoir space for getter and dessicant, the said dessicant and getter laid flat on each of the said N recessed portions to be in strong bond with the surface of the said N recessed portions, a band of metal stack laid flat at the perimeter of the inner surface of said glass lid member bordering each of N recessed portions so as to be in strong bond with the said surface of the glass lid member, a low temperature melting solder metal alloy laid flat on the said metal stack and pre-tinned to be in strong bond with the said metal stack; a bottom glass substrate member having two surfaces of which the inner surface, centrally containing a transparent anode and an active organic 22
light emitting diode device, faces the inner surface of the said glass lid member, the inner surface of the said glass substrate member further containing a band of dielectric layer laid at the perimeter of the inner surface of the said glass substrate member to be in strong bond with the transparent anode and inner surface of the said glass substrate member, a band of metal stack laid over the said dielectric layer forming a strong bond with the dielectric layer; said glass lid member and plurality of N glass substrate members placed in contact with their inner surfaces facing each other inside a Nitrogen controlled environment; said band of metal stack of each of the said plurality of N glass substrate members and each pre-tinned band of said solder alloy bordering each of the plurality of N recessed portions of said glass lid member, contacting their surfaces in substantial alignment; said glass lid member and each of the plurality of N glass substrate members thermally sealed in substantial alignment through the said solder alloy, enclosing pure Nitrogen.
13. A large area metal sealed flat organic light emitting diode device as claimed in claim 12 wherein the material of the lid member is Nickel plate steel or Nickel or selectively gold plated Nickel or stainless steel.
14. A large area metal sealed flat organic light emitting diode device as claimed in claim 12 wherein the plurality of said N glass substrates can be reduced to single substrate where N=1.
15. A metal sealed Organic Light Emitting Diode device as claimed in claims 1 through 14 is applied in general purpose lighting, backlighting liquid crystal displays and special information displays.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US46109903P | 2003-04-08 | 2003-04-08 | |
| US60/461,099 | 2003-04-08 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| WO2004092566A2 WO2004092566A2 (en) | 2004-10-28 |
| WO2004092566A3 WO2004092566A3 (en) | 2005-09-22 |
| WO2004092566B1 true WO2004092566B1 (en) | 2005-10-27 |
Family
ID=33299766
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| PCT/US2004/010664 WO2004092566A2 (en) | 2003-04-08 | 2004-04-07 | Metal seal packaging for organic light emitting diode device |
Country Status (2)
| Country | Link |
|---|---|
| US (1) | US7202602B2 (en) |
| WO (1) | WO2004092566A2 (en) |
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| TWI268732B (en) * | 2004-12-16 | 2006-12-11 | Au Optronics Corp | Organic light emitting device |
| US20060278965A1 (en) * | 2005-06-10 | 2006-12-14 | Foust Donald F | Hermetically sealed package and methods of making the same |
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| US20070040501A1 (en) * | 2005-08-18 | 2007-02-22 | Aitken Bruce G | Method for inhibiting oxygen and moisture degradation of a device and the resulting device |
| US7722929B2 (en) | 2005-08-18 | 2010-05-25 | Corning Incorporated | Sealing technique for decreasing the time it takes to hermetically seal a device and the resulting hermetically sealed device |
| US20080206589A1 (en) * | 2007-02-28 | 2008-08-28 | Bruce Gardiner Aitken | Low tempertature sintering using Sn2+ containing inorganic materials to hermetically seal a device |
| TWI271120B (en) * | 2005-12-20 | 2007-01-11 | Au Optronics Corp | Organic electroluminescent device |
| KR100673765B1 (en) | 2006-01-20 | 2007-01-24 | 삼성에스디아이 주식회사 | Organic light-emitting display device and the preparing method of the same |
| US20070172971A1 (en) * | 2006-01-20 | 2007-07-26 | Eastman Kodak Company | Desiccant sealing arrangement for OLED devices |
| US8038495B2 (en) * | 2006-01-20 | 2011-10-18 | Samsung Mobile Display Co., Ltd. | Organic light-emitting display device and manufacturing method of the same |
| KR100635514B1 (en) * | 2006-01-23 | 2006-10-18 | 삼성에스디아이 주식회사 | Organic electroluminescence display device and method for fabricating of the same |
| JP4456092B2 (en) | 2006-01-24 | 2010-04-28 | 三星モバイルディスプレイ株式會社 | Organic electroluminescent display device and manufacturing method thereof |
| JP4624309B2 (en) * | 2006-01-24 | 2011-02-02 | 三星モバイルディスプレイ株式會社 | Organic electroluminescent display device and manufacturing method thereof |
| KR100688795B1 (en) | 2006-01-25 | 2007-03-02 | 삼성에스디아이 주식회사 | Organic light-emitting display device and the preparing method of the same |
| KR100671641B1 (en) * | 2006-01-25 | 2007-01-19 | 삼성에스디아이 주식회사 | Organic light emitting display device and fabricating method the same |
| US8164257B2 (en) | 2006-01-25 | 2012-04-24 | Samsung Mobile Display Co., Ltd. | Organic light emitting display and method of fabricating the same |
| KR100685853B1 (en) * | 2006-01-25 | 2007-02-22 | 삼성에스디아이 주식회사 | Organic electroluminescence device and method for fabricating of the same |
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| KR100732808B1 (en) * | 2006-01-26 | 2007-06-27 | 삼성에스디아이 주식회사 | Preparing method of organic light-emitting display device |
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| PT104282A (en) | 2008-12-05 | 2010-06-07 | Univ Do Porto | DSC SOLAR CELL GLASS SELECTION PROCESS |
| KR20110110246A (en) * | 2008-12-31 | 2011-10-06 | 쓰리엠 이노베이티브 프로퍼티즈 컴파니 | Substrate with planarizing coating and method of making same |
| US7948178B2 (en) * | 2009-03-04 | 2011-05-24 | Global Oled Technology Llc | Hermetic seal |
| WO2011046961A1 (en) * | 2009-10-12 | 2011-04-21 | Bml Productions, Inc. | Subsurface organic light emitting diode display |
| US8246867B2 (en) * | 2009-10-16 | 2012-08-21 | Corning Incorporated | Method for assembling an optoelectronic device |
| KR101127595B1 (en) * | 2010-05-04 | 2012-03-23 | 삼성모바일디스플레이주식회사 | Organic light emitting display device and manufacturing method thereof |
| EP2596527B1 (en) * | 2010-07-22 | 2019-05-15 | Ferro Corporation | Method of hermetically sealing an active layer and corresponding photovoltaic device |
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| CN103560209A (en) * | 2013-10-12 | 2014-02-05 | 深圳市华星光电技术有限公司 | Organic light-emitting diode device and manufacturing method thereof |
| DE102014101518A1 (en) * | 2014-02-07 | 2015-08-13 | Osram Oled Gmbh | Organic optoelectronic component and method for producing an organic optoelectronic component |
| JP6459145B2 (en) * | 2014-05-22 | 2019-01-30 | Ａｇｃ株式会社 | Laminate peeling apparatus, peeling method, and electronic device manufacturing method |
| CN107863453B (en) * | 2017-11-08 | 2020-09-29 | 固安翌光科技有限公司 | OLED device based on end face packaging and preparation method thereof |
| CN109920937B (en) * | 2019-03-20 | 2021-04-13 | 云谷（固安）科技有限公司 | Display panel |
| KR20220000440A (en) * | 2020-06-25 | 2022-01-04 | 삼성디스플레이 주식회사 | Display device and method of fabricating the same |
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| US6573652B1 (en) * | 1999-10-25 | 2003-06-03 | Battelle Memorial Institute | Encapsulated display devices |
| JP4066620B2 (en) * | 2000-07-21 | 2008-03-26 | 日亜化学工業株式会社 | LIGHT EMITTING ELEMENT, DISPLAY DEVICE HAVING LIGHT EMITTING ELEMENT AND METHOD FOR MANUFACTURING DISPLAY DEVICE |
| TWI236862B (en) * | 2002-09-03 | 2005-07-21 | Au Optronics Corp | Package for OLED device |
| US6975067B2 (en) * | 2002-12-19 | 2005-12-13 | 3M Innovative Properties Company | Organic electroluminescent device and encapsulation method |
-
2004
- 2004-04-05 US US10/818,042 patent/US7202602B2/en not_active Expired - Fee Related
- 2004-04-07 WO PCT/US2004/010664 patent/WO2004092566A2/en active Application Filing
Also Published As
| Publication number | Publication date |
|---|---|
| WO2004092566A3 (en) | 2005-09-22 |
| WO2004092566A2 (en) | 2004-10-28 |
| US7202602B2 (en) | 2007-04-10 |
| US20040201348A1 (en) | 2004-10-14 |
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