WO2004078410A3 - Agent for increasing selection ratio of polishing rates - Google Patents

Agent for increasing selection ratio of polishing rates Download PDF

Info

Publication number
WO2004078410A3
WO2004078410A3 PCT/JP2004/002680 JP2004002680W WO2004078410A3 WO 2004078410 A3 WO2004078410 A3 WO 2004078410A3 JP 2004002680 W JP2004002680 W JP 2004002680W WO 2004078410 A3 WO2004078410 A3 WO 2004078410A3
Authority
WO
WIPO (PCT)
Prior art keywords
polishing
agent
ratio
rate
selection ratio
Prior art date
Application number
PCT/JP2004/002680
Other languages
French (fr)
Other versions
WO2004078410A2 (en
Inventor
Toshiya Hagihara
Yutaka Wada
Tomohiko Akatsuka
Tatsuya Sasaki
Original Assignee
Kao Corp
Ebara Corp
Toshiya Hagihara
Yutaka Wada
Tomohiko Akatsuka
Tatsuya Sasaki
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kao Corp, Ebara Corp, Toshiya Hagihara, Yutaka Wada, Tomohiko Akatsuka, Tatsuya Sasaki filed Critical Kao Corp
Publication of WO2004078410A2 publication Critical patent/WO2004078410A2/en
Publication of WO2004078410A3 publication Critical patent/WO2004078410A3/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/04—Aqueous dispersions
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B57/00—Devices for feeding, applying, grading or recovering grinding, polishing or lapping agents
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B7/00—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor
    • B24B7/20—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground
    • B24B7/22—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain
    • B24B7/228—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain for grinding thin, brittle parts, e.g. semiconductors, wafers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/31051—Planarisation of the insulating layers
    • H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step

Abstract

An agent for increasing a selection ratio of polishing rates, wherein the agent comprises an organic cationic compound, which increases a ratio of a polishing rate of a silicon nitride film to a polishing rate of a silicon oxide film, wherein the agent is provided as a component of a polishing composition used together with a fixed abrasive polishing tool comprising a polishing member comprising abrasive grains and a resin; a polishing composition which increases a ratio of a polishing rate of a silicon nitride film to a polishing rate of a silicon oxide film, wherein the polishing composition comprises the above agent, and wherein the polishing composition is used together with a fixed abrasive polishing tool comprising a polishing member comprising abrasive grains and a resin; and a process for increasing a ratio of a polishing rate of a silicon nitride film to a polishing rate of a silicon oxide film, comprising the step of applying the polishing composition to a fixed abrasive polishing tool comprising a polishing member comprising abrasive grains and a resin.
PCT/JP2004/002680 2003-03-05 2004-03-03 Agent for increasing selection ratio of polishing rates WO2004078410A2 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2003-58791 2003-03-05
JP2003058791A JP2004273547A (en) 2003-03-05 2003-03-05 Polishing rate selectivity enhancer

Publications (2)

Publication Number Publication Date
WO2004078410A2 WO2004078410A2 (en) 2004-09-16
WO2004078410A3 true WO2004078410A3 (en) 2004-11-04

Family

ID=32958805

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2004/002680 WO2004078410A2 (en) 2003-03-05 2004-03-03 Agent for increasing selection ratio of polishing rates

Country Status (2)

Country Link
JP (1) JP2004273547A (en)
WO (1) WO2004078410A2 (en)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8025808B2 (en) 2003-04-25 2011-09-27 Saint-Gobain Ceramics & Plastics, Inc. Methods for machine ceramics
US7504044B2 (en) * 2004-11-05 2009-03-17 Cabot Microelectronics Corporation Polishing composition and method for high silicon nitride to silicon oxide removal rate ratios
JP2006318952A (en) * 2005-05-10 2006-11-24 Hitachi Chem Co Ltd Cmp abrasive and method of polishing substrate
JP2006339594A (en) * 2005-06-06 2006-12-14 Seimi Chem Co Ltd Abrasive agent for semiconductor
EP2121244B1 (en) 2006-12-20 2013-07-10 Saint-Gobain Ceramics & Plastics, Inc. Methods for machining inorganic, non-metallic workpieces
KR101396853B1 (en) 2007-07-06 2014-05-20 삼성전자주식회사 Slurry Composition for Polishing Silicon Nitride, Method of Polishing a Silicon Nitride Layer Using the Slurry Composition and Method of Manufacturing a Semiconductor Device Using the Slurry Composition
US8017524B2 (en) 2008-05-23 2011-09-13 Cabot Microelectronics Corporation Stable, high rate silicon slurry
WO2016132951A1 (en) * 2015-02-19 2016-08-25 株式会社フジミインコーポレーテッド Polishing composition
WO2016132952A1 (en) * 2015-02-20 2016-08-25 株式会社フジミインコーポレーテッド Polishing composition
JP5843036B1 (en) 2015-06-23 2016-01-13 コニカミノルタ株式会社 Method for preparing recycled abrasive slurry
US11458590B2 (en) 2015-12-09 2022-10-04 Konica Minolta, Inc. Abrasive slurry regeneration method
JP2019059842A (en) * 2017-09-26 2019-04-18 株式会社フジミインコーポレーテッド Polishing composition, method for producing polishing composition, polishing method and method for producing semiconductor substrate
JP7425660B2 (en) 2020-04-07 2024-01-31 花王株式会社 Polishing liquid composition for silicon oxide film

Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5958794A (en) * 1995-09-22 1999-09-28 Minnesota Mining And Manufacturing Company Method of modifying an exposed surface of a semiconductor wafer
EP1050369A2 (en) * 1999-04-29 2000-11-08 Ebara Corporation Method and apparatus for polishing workpieces
WO2001004231A1 (en) * 1999-07-13 2001-01-18 Kao Corporation Polishing liquid composition
EP1077241A2 (en) * 1999-08-17 2001-02-21 L'air Liquide, Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude Composition for use in a chemical-mechanical planarization process
WO2001012740A1 (en) * 1999-08-13 2001-02-22 Cabot Microelectronics Corporation Polishing system and method of its use
EP1106663A1 (en) * 1999-12-08 2001-06-13 Eastman Kodak Company Slurry for chemical mechanical polishing silicon dioxide
US6358850B1 (en) * 1999-12-23 2002-03-19 International Business Machines Corporation Slurry-less chemical-mechanical polishing of oxide materials
US20020081949A1 (en) * 2000-10-23 2002-06-27 Hiroyuki Yoshida Polishing composition
US20020173221A1 (en) * 2001-03-14 2002-11-21 Applied Materials, Inc. Method and apparatus for two-step polishing

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5958794A (en) * 1995-09-22 1999-09-28 Minnesota Mining And Manufacturing Company Method of modifying an exposed surface of a semiconductor wafer
EP1050369A2 (en) * 1999-04-29 2000-11-08 Ebara Corporation Method and apparatus for polishing workpieces
WO2001004231A1 (en) * 1999-07-13 2001-01-18 Kao Corporation Polishing liquid composition
WO2001012740A1 (en) * 1999-08-13 2001-02-22 Cabot Microelectronics Corporation Polishing system and method of its use
EP1077241A2 (en) * 1999-08-17 2001-02-21 L'air Liquide, Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude Composition for use in a chemical-mechanical planarization process
EP1106663A1 (en) * 1999-12-08 2001-06-13 Eastman Kodak Company Slurry for chemical mechanical polishing silicon dioxide
US6358850B1 (en) * 1999-12-23 2002-03-19 International Business Machines Corporation Slurry-less chemical-mechanical polishing of oxide materials
US20020081949A1 (en) * 2000-10-23 2002-06-27 Hiroyuki Yoshida Polishing composition
US20020173221A1 (en) * 2001-03-14 2002-11-21 Applied Materials, Inc. Method and apparatus for two-step polishing

Also Published As

Publication number Publication date
JP2004273547A (en) 2004-09-30
WO2004078410A2 (en) 2004-09-16

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