WO2004069947A1 - Method of polishing a silicon-containing dielectric - Google Patents
Method of polishing a silicon-containing dielectric Download PDFInfo
- Publication number
- WO2004069947A1 WO2004069947A1 PCT/US2004/002908 US2004002908W WO2004069947A1 WO 2004069947 A1 WO2004069947 A1 WO 2004069947A1 US 2004002908 W US2004002908 W US 2004002908W WO 2004069947 A1 WO2004069947 A1 WO 2004069947A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- polishing
- acid
- acids
- combinations
- substrate
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1454—Abrasive powders, suspensions and pastes for polishing
- C09K3/1463—Aqueous liquid suspensions
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C19/00—Surface treatment of glass, not in the form of fibres or filaments, by mechanical means
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/31051—Planarisation of the insulating layers
- H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step
Definitions
- This invention pertains to a method of polishing a silicon-containing dielectric substrate.
- polishing compositions typically contain an abrasive material in an aqueous solution and are applied to a surface by contacting the surface with a polishing pad saturated with the polishing composition.
- Typical abrasive materials include silicon dioxide, cerium oxide, aluminum oxide, zirconium oxide, and tin oxide.
- the polishing slurry is typically used in conjunction with a polishing pad (e.g., polishing cloth or disk).
- a polishing pad e.g., polishing cloth or disk.
- Suitable polishing pads are described in U.S. Patents 6,062,968, 6,117,000, and 6,126,532, which disclose the use of sintered polyurethane polishing pads having an open- celled porous network, and U.S. Patent 5,489,233, which discloses the use of solid polishing pads having a surface texture or pattern.
- the abrasive material may be incorporated into the polishing pad.
- U.S. Patent 5,958,794 discloses a fixed abrasive polishing pad.
- polishing compositions and polishing pads can have less than desirable polishing rates or polishing selectivities, and their use in chemically-mechanically polishing semiconductor surfaces can result in poor surface quality. Because the performance of a semiconductor wafer is directly associated with the planarity of its surface, it is crucial to use a polishing composition and method that results in a high polishing efficiency, selectivity, uniformity, and removal rate and leaves a high quality polish with minimal surface defects.
- the difficulty in creating an effective polishing system for semiconductor wafers stems from the complexity of the semiconductor wafer.
- Semiconductor wafers are typically composed of a substrate, on which a plurality of transistors has been formed. Integrated circuits are chemically and physically connected into a substrate by patterning regions in the substrate and layers on the substrate.
- To produce an operable semiconductor wafer and to maximize the yield, performance, and reliability of the wafer it is desirable to polish select surfaces of the wafer without adversely affecting underlying structures or topography. In fact, various problems in semiconductor fabrication can occur if the process steps are not performed on wafer surfaces that are adequately planarized.
- polishing compositions for polishing dielectric materials require an alkaline pH in order to obtain sufficient removal rates for the dielectric.
- U.S. Patents 4,169,337, 4,462,188, and 4,867,757 disclose polishing compositions for silicon dioxide removal comprising silica abrasives at an alkaline pH.
- WO 00/25984, WO 01/56070, and WO 02/01620 disclose polishing compositions for Shallow Trench Isolation (STI) polishing comprising fumed silica at alkaline pH.
- STI Shallow Trench Isolation
- EP 853 110 Al describes a polishing composition having a pH of 11-13, which purportedly increases selectivity in STI polishing.
- Patent Application Publication 2001/0051433 Al discloses a polishing composition for dielectric chemical-mechanical polishing (CMP) comprising fumed silica and a cesium salt with a pH of 7 or greater.
- CMP dielectric chemical-mechanical polishing
- Such alkaline polishing compositions while effective in the removal of silicon dioxide dielectric materials, provide poor selectivity in substrates comprising both silicon dioxide and silicon nitride layers, as in STI substrates.
- the use of chelating acid additives to improve the selectivity in STI polishing is known in the art. For example, U.S.
- Patents 5,738,800, 6,042,741, 6,132,637, and 6,218,305 disclose the use of acid-containing complexing agents in polishing compositions comprising an abrasive (e.g., ceria or silica).
- U.S. Patent 5,614,444 discloses the use of chemical additives comprising anionic, cationic, or nonionic polar groups and apolar organic components to suppress the removal of a dielectric material.
- EP 1 061 111 Al discloses polishing compositions for STI polishing comprising ceria abrasive and an organic compound comprising a carboxylic acid or sulfonic acid group.
- the invention seeks to provide such a chemical-mechanical polishing system and method.
- the invention provides a method of polishing a substrate comprising (i) contacting a substrate comprising a silicon-containing dielectric layer with a chemical- mechanical polishing system and (ii) abrading at least a portion of the silicon-containing dielectric layer to polish the substrate.
- the chemical-mechanical polishing system comprises (a) an inorganic abrasive, (b) a polishing additive bearing a functional group with a pK a of about 3 to about 9, and (c) a liquid carrier.
- the polishing additive is a compound selected from the group consisting of arylamines, aminoalcohols, aliphatic amines, heterocyclic amines, hydroxamic acids, aminocarboxylic acids, cyclic monocarboxylic acids, unsaturated monocarboxylic acids, substituted phenols, sulfonamides, thiols, salts thereof, and combinations thereof.
- the polishing composition has a pH of about 7 or less and does not contain a significant amount of cross-linked polymer abrasive particles that are electrostatically associated with the inorganic abrasive particles.
- the functional group desirably is selected from amines, carboxylic acids, alcohols, thiols, sulfonamides, imides, hydroxamic acids, barbituric acids, salts thereof, and combinations thereof.
- the invention further provides a chemical-mechanical polishing composition comprising (a) ceria abrasive having an average particle size of about 150 nm or less, (b) a polishing additive bearing a functional group with a pK a of about 3 to about 9, wherein the polishing additive is a compound selected from the group consisting of arylamines, aminoalcohols, aliphatic amines, heterocyclic amines, hydroxamic acids, aminocarboxylic acids, cyclic monocarboxylic acids, unsaturated monocarboxylic acids, substituted phenols, sulfonamides, thiols, salts thereof, and combinations thereof, and (c) a liquid carrier.
- the chemical-mechanical polishing composition has a pH
- the invention is directed to a chemical-mechanical polishing (CMP) system comprising (a) an abrasive, (b) a polishing additive bearing a functional group with a pK a of about 3 to about 9, and (c) a liquid carrier, and a method of polishing a substrate comprising a silicon-containing dielectric layer using the CMP system.
- CMP chemical-mechanical polishing
- the CMP system described herein comprises an inorganic abrasive.
- the inorganic abrasive can be in any suitable form (e.g., abrasive particles) and can be suspended in the liquid carrier or can be fixed onto a polishing surface of a polishing pad.
- the polishing pad can be any suitable polishing pad.
- the polishing additive and any other components suspended in the liquid carrier form a polishing composition of the CMP system.
- the inorganic abrasive can be any suitable inorganic abrasive.
- the inorganic abrasive can be a metal oxide abrasive selected from the group consisting of alumina (e.g., ⁇ -alumina, ⁇ -alumina, ⁇ -alumina, and fumed alumina), silica (e.g., colloidally dispersed condensation-polymerized silica, precipitated silica, and fumed silica), ceria, titania, zirconia, chromia, iron oxide, germania, magnesia, co-formed products thereof, and combinations thereof.
- alumina e.g., ⁇ -alumina, ⁇ -alumina, ⁇ -alumina, and fumed alumina
- silica e.g., colloidally dispersed condensation-polymerized silica, precipitated silica, and fumed silica
- ceria titania, zirconia, chro
- the inorganic abrasive also can be silicon carbide, boron nitride, and the like.
- the metal oxide abrasive optionally can be electrostatically coated with an oppositely-charged polyelectrolyte, for example, polyelectrolyte-coated alumina abrasive such as polystyrenesulfonic acid-coated alumina.
- the CMP system does not contain any significant amount of cross-linked polymer abrasive particles that are electrostatically associated with the inorganic abrasive particles. The introduction of cross-linked polymer abrasives can reduce the overall polishing removal rates.
- the amount of cross-linked polymer abrasive particles present in the CMP system should be sufficiently low so as not to interfere with the polishing properties of the inorganic abrasive.
- the CMP system contains an amount of cross-linked polymer particles that is less than about 10% by weight (e.g., less than about 5% by weight or less than about 1% by weight) of the amount of inorganic particles.
- the CMP system preferably does not contain any cross-linked polymer abrasive particles that are electrostatically associated with the inorganic abrasive particles.
- the inorganic abrasive is a cationic abrasive, more preferably ceria.
- the ceria can be produced by any suitable method.
- Such ceria abrasives are sold by Nanophase Technologies, for ⁇ example, as NanoTek® cerium oxide, and Ferro Corporation.
- Other suitable ceria abrasives include precipitated ceria abrasives formed by hydrothermal processes, such as those sold by Advanced Nano Products and Rhodia.
- the inorganic abrasive can have any suitable primary particle size.
- the abrasive has an average primary particle size of about 200 nm or less (e.g, about 180 nm or less).
- the inorganic abrasive has an average primary particle size of about 160 nm or less (e.g., about 140 nm or less).
- the primary particle size desirably is measured by a laser diffraction technique.
- the CMP composition preferably is resistant to particle agglomeration such that the average agglomerate particle size is about 300 nm or less (e.g., 250 nm or less, or even 200 nm or less).
- the inorganic abrasive comprises (consists of or consists essentially of) ceria.
- the ceria abrasive does not contain any significant amount of cross-linked polymer abrasive particles that are electrostatically associated with the ceria. More preferably, the ceria abrasive does not contain any cross-linked polymer abrasive particles that are electrostatically associated with the ceria.
- the ceria abrasive preferably has an average primary particle size of about 180 nm or less, more preferably about 150 nm or less (or even about 140 nm or less). Typically, the ceria abrasive has an average particle size of about 20 nm or more (e.g., about 50 nm or more).
- the overall width of the particle size distribution preferably is ⁇ about 50% (e.g., ⁇ about 40%, ⁇ about 30%, or even ⁇ about 20%) of the average primary particle size.
- the term colloid refers to the suspension of abrasive particles in the liquid carrier.
- Colloidal stability refers to the maintenance of that suspension through time.
- an abrasive is considered colloidally stable if, when the abrasive is placed into a 100 ml graduated cylinder and allowed to stand unagitated for a time of 2 hours, the difference between the concentration of particles in the bottom 50 ml of the graduated cylinder ([B] in terms of g/ml) and the concentration of particles in the top 50 ml of the graduated cylinder ([T] in terms of g/ml) divided by the initial concentration of particles in the abrasive composition ([C] in terms of g/ml) is less than or equal to 0.5 (i.e., ⁇ [B] - [T] ⁇ /[C] 0.5). More preferably, the value of [B]-[T]/[C] desirably is less than or equal to 0.3, and preferably is less than or equal to 0.1.
- the inorganic abrasive according to either the first or second embodiment typically has a positive zeta potential at the pH of the polishing composition.
- the positive zeta potential of the inorganic abrasive is maintained upon combination with the polishing additive in the polishing composition.
- the zeta potential of an abrasive refers to the difference between the electrical charge of the ions surrounding the abrasive and the electrical charge of the bulk solution (e.g., the liquid carrier and any other components dissolved therein).
- the zeta potential of the inorganic abrasive will vary with pH.
- the zeta potential of ceria at pH of 5 in 40 rnM KC1 is about + 32 mV.
- the polishing additive does not interact strongly with the abrasive so as to cause reversal of the zeta potential, which can lead to agglomeration of the abrasive particles and settling.
- the polishing composition has a low conductivity (e.g., ionic strength), for example a conductivity value of less than about 2000 ⁇ S/cm (e.g., less than about 1500 ⁇ S/cm) at a pH of about 5 and a conductivity value of less than about 500 ⁇ S/cm at a pH of about 4.
- a low conductivity value reflects that only a small amount of base is required to adjust the pH to the desired range.
- the polishing composition When the abrasive is suspended in the liquid carrier, the polishing composition typically comprises about 0.01 wt.% to about 10 wt.% (e.g., about 0.02 wt.% to about 5 wt.%, or about 0.05 wt.% to about 1 wt.%) inorganic abrasive, based on the weight of the liquid carrier and any components dissolved or suspended therein.
- the polishing composition comprises about 0.1 wt.% to about 0.5 wt.% inorganic abrasive.
- the polishing additive is included in the polishing composition to modify the surface properties of the silicon-containing dielectric layer being polished so as to make the surface more receptive to interaction with abrasive particles.
- the pH of the polishing composition plays an important role in determining the interactions between the polishing additives and the surface of the silicon-containing dielectric layer.
- the polishing composition typically has a pH of about 7 or less, preferably about 2 to about 6.5, more preferably about 3 to about 6 (e.g., about 3.5 to about 5.5).
- the polishing additive desirably bears a functional group having a pK a (in water) of about 3 to about 9 (e.g., about 3 to about 8, or about 3 to about 7).
- the polishing additive preferably bears a functional group having a pK a (in water) of about 4 to about 9, more preferably a functional group having a pK a (in water) of about 4 to about 8 (e.g., about 4 to about 1, or about 4 to about 6).
- the functional group of the polishing additive can be any suitable functional group, and typically is selected from amines, carboxylic acids, alcohols, thiols, sulfonamides, imides, hydroxamic acids, barbituric acids, hydrazines, amidoxines, salts thereof, and combinations thereof.
- Polishing additives bearing these functional groups and having a suitable pK a include compounds selected from the group consisting of arylamines, aminoalcohols, aliphatic amines, heterocyclic amines, hydroxamic acids, aminocarboxylic acids, cyclic monocarboxylic acids, unsaturated monocarboxylic acids, substituted phenols, sulfonamides, thiols, and combinations thereof.
- the polishing additive is selected from the group consisting of arylamines, heterocyclic amines, aminocarboxylic acids, and combinations thereof.
- polishing additives may exist in the form of a salt, for example a salt selected from the group consisting of hydrochloride salts, hydrobromide salts, sulfate salts, sulfonate salts, trifluoromethanesulfonate salts, acetate salts, trifluoroacetate salts, picrate salts, perfluorobutyrate salts, sodium salts, potassium salts, ammonium salts, halide salts, or the like.
- a salt selected from the group consisting of hydrochloride salts, hydrobromide salts, sulfate salts, sulfonate salts, trifluoromethanesulfonate salts, acetate salts, trifluoroacetate salts, picrate salts, perfluorobutyrate salts, sodium salts, potassium salts, ammonium salts, halide salts, or the like.
- the arylamine can be any suitable arylamine.
- the arylamine is a primary arylamine.
- the arylamine optionally can be substituted with one or more substituents selected from the group consisting of C ⁇ - 12 al yl. d. 12 alkoxy, C 6 - ⁇ 2 aryl, carboxylic acid, sulfonic acid, phosphonic acid, hydroxyl, thiol, sulfonamide, acetamide, salts thereof, and combinations thereof.
- the arylamine can be aniline, 4- chloroaniline.
- the aminoalcohol can be any suitable aminoalcohol.
- aminoalcohols can be selected from the group consisting of triethanolamine, benzyldiethanolamine, tris(hydroxymethyl)aminomethane, hydroxylamine, tetracycline, salts thereof, and combinations thereof.
- the aminoalcohol is a tertiary aminoalcohol.
- the aliphatic amine can be any suitable aliphatic amine.
- the aliphatic amine is selected from the group consisting of methoxyamine, hydroxylamine, N- methylhydroxylamine, N,O-dimethylhydroxylamine, ⁇ -difluoroethylamine, ethylenediamine, triethylenediamine, diethyl((butylamino)(2- hydroxyphenyl)methyl)phosphonate, iminoethanes, iminobutanes, triallylamine, cyanoamines (e.g., aminoacetonitrile, diethylaminoacetonitrile, 2-amino-2-cyanopropane, isopropylaminopropionitrile, diethylaminopropionitrile, aminopropionitrile, dicyanodiethylamine), 3-(dimethylamino)propionitrile), salts thereof, and combinations thereof.
- cyanoamines e.g., aminoacet
- the aliphatic amine can also be a hydrazine.
- the hydrazine is selected from the group consisting of hydrazine, methylhydrazine, tetramethylhydrazine, N,N- diethylhydrazine, phenylhydrazine, N,N-dimethylhydrazine, trimethylhydrazine, ethylhydrazine, salts thereof (e.g., hydrochloride salts), and combinations thereof.
- the heterocyclic amine can be any suitable heterocyclic amine, including monocyclic, bicyclic, and tricyclic amines.
- the cyclic amine is a 3-, 4-, 5- or 6- membered cyclic structure comprising one or more nitrogen atoms.
- the cyclic amine is a 5- or 6-membered cyclic structure.
- the heterocyclic amine optionally is substituted by one or more substituents selected from the group consisting of H, OH, COOH, SO 3 H, PO 3 H, Br, CI, I, F, NO 2 , hydrazine, a C ⁇ - 8 alkyl (optionally substituted with OH, COOH, Br, CI, I, or NO 2 ), a C 6 - ⁇ 2 aryl (optionally substituted with OH, COOH, Br, I, or NO 2 ), C(O)H, C(O)R (where R is a C ⁇ - 8 alkyl or a C 6 . ⁇ 2 aryl), and a C ⁇ .
- the heterocyclic amine contains at least one unsubstituted heterocyclic nitrogen.
- the heterocyclic amine can be imidazole, 1-methylimidazole, 2-methylimidazole, 2-ethylimidazole, 2-hydroxymethylimidazole, l-methyl-2- hydroxymethylimidazole, benzimidazole, quinoline, isoquinoline, hydroxyquinoline. melamine, pyridine.
- bipyridine 2-methylpyridine, 4-methylpyridine, 2-aminopyridine, 3- aminopyridine, 2,3-pyridinedicarboxylic acid, 2,5-pyridinedicarboxylic acid, 2,6-pyridinedicarboxylic acid, 5-butyl-2-pyridinecarboxylic acid, 4-hydroxy- 2-pyridinecarboxylic acid, 3-hydroxy-2-pyridinecarboxylic acid, 2-pyridinecarboxylic acid, 3-benzoyl-2-pyridinecarboxylic acid, 6-methyl-2-pyridinecarboxylic acid, 3-methyl- 2-pyridinecarboxylic acid, 6-bromo-2-pyridinecarboxylic acid, 6-chloro- 2-pyridinecarboxylic acid, 3,6-dichloro-2-pyridinecarboxylic acid, 4-hydrazino- 3,5,6-trichloro-2-pyridinecarboxylic acid, quinoline, isoquinoline, 2-quinolinecarboxylic acid, 4-methoxy-2-quinolinecarboxylic acid, 8-hydroxy-2-quino
- the heterocylic amine also can be an imide, an aminidine, or a barbituric acid compound.
- suitable imides include those selected from the group consisting of fluorouracil, methylthiouracil, 5,5-diphenylhydantoin, 5,5-dimethyl-2,4-oxazolidinedione, phthalimide, succinimide, 3,3-methylphenylglutarimide, 3,3-dimethylsuccinimide, salts thereof, and combinations thereof.
- Suitable aminidines include those selected from the group consisting of imidazo[2,3-b]thioxazole, hydroxyimidazo[2,3-a]isoindole, salts thereof, and combinations thereof.
- Suitable barbituric acids include those selected from the group consisting of 5,5-methylphenylbarbituric acid, 1,5,5-trimethylbarbituric acid, hexobarbital, 5,5-dimethylbarbituric acid, l,5-dimethyl-5-phenylbarbituric acid, salts thereof, and combinations thereof.
- the hydroxamic acid can be any suitable hydroxamic acid.
- the hydroxamic acid is selected from the group consisting of formohydroxamic acid, acetohydroxamic acid, benzohydroxamic acid, salicylhydroxamic acid, 2- aminobenzohydroxamic acids, 2-chlorobenzohydroxamic acid, 2-fluorobenzohydroxamic acid, 2-nitrobenzohydroxamic acid, 3-nitrobenzohydroxamic acid, 4- aminobenzohydroxamic acid, 4-chlorobenzohydroxamic acid, 4-fluorobenzohydroxamic acid, 4-nitrobenzohydroxamic acid, 4-hydroxybenzohydroxamic acid, salts thereof, and combinations thereof.
- the aminocarboxylic acid can be any suitable aminocarboxylic acid.
- Traditional aminocarboxylic acid compounds such as proline, glycine, phenylglycine, and the like have a pK a of about 2-2.5 for the carboxylic acid moiety and about 9-10 for the amino moiety and are not suitable for use in the context of the invention.
- aminocarboxylic acids selected from the group consisting of glutamic acid, beta-hydroxyglutamic acid, aspartic acid, asparagine, azaserine, histidine, 3-methylhistidine, cytosine, 7- aminocephalosporanic acid, and carnosine contain a functional group having a pK a of in the range of about 3 to about 8.
- the cyclic monocarboxylic acid can be any suitable cyclic monocarboxylic acid.
- Di- and poly-carboxylic acids previously suggested for use in polishing silicon-containing dielectric layers can have a pK a in the desired range, but have a total charge that leads to undesirable agglomeration, adhesion, and/or rapid settling of the inorganic abrasive particles.
- the cyclic carboxylic acid compound comprises a C 4 . 12 cyclic alkyl or C 6 - ⁇ 2 aryl group.
- the cyclic carboxylic acid compound optionally is substituted by one or more substituents selected from H, OH, COOH, Br, CI, I, F, NO 2 , hydrazine, a C ⁇ - 8 alkyl (optionally substituted with OH, COOH, Br, CI, I, or NO ), a C 6 - ⁇ 2 aryl (optionally substituted with OH, COOH, Br, I, or NO 2 ), C(O)H, C(O)R (where R is a C ⁇ - 8 alkyl or a C 6 - ⁇ aryl), and C ⁇ _ 8 alkenyl.
- the cyclic carboxylic acid compound is not a di- or poly-hydroxybenzoic acid.
- Suitable cyclic monocarboxylic acid compounds include those selected from the group consisting of benzoic acid, C ⁇ - ⁇ 2 -alkyl-substituted benzoic acids, C ⁇ _ ⁇ 2 -alkoxy-substituted benzoic acids, naphthalene 2-carboxylic acid, cyclohexane carboxylic acid, cyclohexyl acetic acid, 2-phenylacetic acid, 4-hydroxybenzoic acid, 3-hydroxybenzoic acid, 2-piperidinecarboxylic acid, cyclopropanecarboxylic acids (e.g., cis- and trans-2- methylcyclopropanecarboxylic acid), salts thereof, and combinations thereof.
- Especially preferred polishing additives are 4-hydroxybenzoic acid, cyclohexane carboxylic acid, benzoic acid, salts thereof, and combinations thereof.
- the unsaturated monocarboxylic acid can be any suitable unsaturated monocarboxylic acid (e.g., alkenecarboxylic acid). Typically, the unsaturated monocarboxylic acid is a C . 6 -alk-2-enoic acid.
- the unsaturated monocarboxylic acid is selected from the group consisting of cinnamic acids, propenoic acids (e.g., acrylic acid, 3-chloroprop-2-enecarboxylic acid), butenoic acids (e.g., crotonic acid, 3-chlorobut- 2-enecarboxylic acid, 4-chlorobut-2-enecarboxylic acid), pentenoic acids (e.g., cis- or trans- 2-pentenoic acid, 2-methyl-2-pentenoic acid), hexenoic acids (e.g., 2-hexenoic acid, 3-ethyl- 2-hexenoic acid), salts thereof, and combinations thereof.
- propenoic acids e.g., acrylic acid, 3-chloroprop-2-enecarboxylic acid
- butenoic acids e.g., crotonic acid, 3-chlorobut- 2-enecarboxylic acid, 4-chlorobut-2-enecar
- the substituted phenol can be any suitable substituted phenol.
- the substituted phenol contains a substituent selected from nitro, chloro, bromo, fluoro, cyano, alkoxycarbonyl, alkanoyl, acyl, alkylsulfonyl, and combinations thereof.
- Suitable nitrophenols include those selected from the group consisting of nitrophenol, 2,6-dihalo-4- nitrophenols, 2,6-di-C ⁇ - ⁇ 2 -alkyl-4-nitrophenols, 2,4-dinitrophenol, 2,6-dinitrophenol, 3,4- dinitrophenol, 2-C ⁇ - ⁇ 2 -alkyl-4,6-dinitrophenols, 2-halo-4,6-dinitrophenols, dinitro-o-cresol, trinitrophenols such as picric acid, salts thereof, and combinations thereof.
- the sulfonamide can be any suitable sulfonamide.
- the sulfonamide is selected from the group consisting of N-chlorotolylsulfonamide, dichlorophenamide, mafenide, mmesulide, sulfamethizole, sulfaperin, sulfacetamide, sulfadiazine, sulfadimethoxine, sulfamethazine, sulfapyridine, sulfaquinoxaline, salts thereof, and combinations thereof.
- the thiol can be any suitable thiol.
- the thiol is selected from the group consisting of hydrogen disulfide, cysteamine, cysteinylcysteine, methyl cysteine, thiophenol, j->-Cl-fhiophenol, o-aminothiophenol, ⁇ -mercaptophenylacetic acid, p- nitrobenzenethiol, 2-mercaptoethanesulfonate, N-dimethylcysteamine, dipropylcysteamine, diethylcysteamine, mercaptoethylmorpholine, methylthioglycolate, mercaptoethylamine, N- trimethylcysteine, glutathione, mercaptoethylepiperidine, diethylaminopropanethiol, salts thereof, and combinations thereof.
- the polishing additive when the polishing additive is an arylamine, the polishing additive preferably is selected from the group consisting of aniline, anthranilic acid, metanilic acid, aminophenols, orthanilic acid, salts thereof, and combinations thereof.
- the polishing additive when the polishing additive is a heterocyclic amine compound, the polishing additive preferably is selected from the group consisting of imidazole, quinoline, pyridine, 2-methylpyridine, 2-pyridinecarboxylic acid, pyridinedicarboxylic acids, 2-quinolinecarboxylic acid, morpholine, piperazine, triazoles, pyrrole, pyrrole-2-carboxylic acid, tetrazoles, salts thereof, and combinations thereof.
- the polishing additive when the polishing additive is an aminocarboxylic acid compound, the polishing additive preferably is selected from the group consisting of glutamic acid, aspartic acid, cysteine, histidine, salts thereof, and combinations thereof.
- the polishing additive when the polishing additive is a cyclic mono-carboxylic acid compound, the polishing additive preferably is selected from the group consisting of benzoic acid, cyclohexane carboxylic acid, cyclohexylacetic acid, 2- phenylacetic acid, salts thereof, and combinations thereof.
- the polishing composition typically comprises about 5 wt.% or less (e.g., about 2 wt.%) or less) polishing additive.
- the polishing composition desirably comprises about 0.005 wt.% or more (e.g., about 0.01 wt.% or more) polishing additive.
- the polishing composition comprises about 1 wt.% or less (e.g., about 0.5 wt.% or less) polishing additive.
- a liquid carrier is used to facilitate the application of the abrasive, the polishing additive, and any other components dissolved or suspended therein to the surface of a suitable substrate to be polished (e.g., planarized).
- the liquid carrier is typically an aqueous carrier and can be water alone, can comprise water and a suitable water-miscible solvent, or can be an emulsion. Suitable water-miscible solvents include alcohols such as methanol, ethanol, and the like.
- the liquid carrier comprises a supercritical fluid.
- the aqueous carrier consists of water, more preferably deionized water.
- the liquid carrier optionally further comprises solvents or surfactants to aid in the solubilization of the polishing additive to enhance the amount of the polishing additive at the substrate surface.
- the polishing composition optionally further comprises one or more components such as pH adjusters, regulators, or buffers, and the like, which further aid in the maintaining of the pH of the polishing composition within the desired range.
- pH adjusters, regulators, or buffers can include, for example, sodium hydroxide, potassium hydroxide, ammonium hydroxide, sodium carbonate, potassium carbonate, sulfuric acid, hydrochloric acid, nitric acid, phosphoric acid, citric acid, potassium phosphate, mixtures thereof, and the like.
- the polishing composition optionally further comprises other components, such as biocides, anti-foaming agents, and the like.
- the biocide can be any suitable biocide, for example an isothiazolinone biocide.
- the amount of biocide used in the polishing composition typically is about 1 to about 50 ppm, preferably about 10 to about 20 ppm based on the liquid carrier and any components dissolved or suspended therein.
- the anti- foaming agent can be any suitable anti-foaming agent.
- the anti-foaming agent can be a polydimethylsiloxane polymer.
- the amount of anti-foaming agent present in the polishing composition typically is about 40 to about 140 ppm based on the liquid carrier and any components dissolved or suspended therein.
- the polishing composition optionally further comprises an alcohol.
- the alcohol is methanol, ethanol, or propanol. More preferably, the alcohol is methanol.
- the alcohol is present in the polishing composition in an amount of about 0.01 wt.%) or more based on the liquid carrier and any components dissolved or suspended therein.
- the alcohol also typically is present in the polishing composition in an amount of about 2 wt.%) or less based on the liquid carrier and any components dissolved or suspended therein.
- the polishing composition optionally further comprises a surfactant to improve polishing selectivity and/or planarity.
- the surfactant can be any suitable surfactant and can be a cationic surfactant, anionic surfactant (e.g., polyacrylates), zwitterionic surfactant, nonionic surfactant, or combination thereof.
- the surfactant is a zwitterionic surfactant or a nonionic surfactant.
- Suitable zwitterionic surfactants include ammonium carboxylates, ammonium sulfates, amine oxides, N-dodecyl-N,N-dimefhylbetaine, betaine, sulfobetaine, alkylammoniopropyl sulfate, and the like.
- Suitable nonionic surfactants include acetylenic glycol surfactants such as 2,4,7,9-tetramethyl-5-decyne-4,7-diol ethoxylate surfactants, polyoxyethylene C 6 .
- the amount of surfactant typically is about 0.01 wt.%) to about 5 wt.%o based on the liquid carrier and any components dissolved or suspended therein.
- the CMP system is intended for use in polishing (e.g., planarizing) a silicon- containing dielectric layer of a substrate.
- the method of polishing a substrate comprises (i) providing the CMP system, (ii) contacting the substrate with the CMP system, and (iii) abrading at least a portion of the substrate to polish the substrate.
- the dielectric layer comprises (i.e., makes up) about 95%> or more (e.g., about 97% or more, or even about 99%) or more) of the total surface area of the substrate.
- the substrate can be any suitable substrate (e.g., an integrated circuit, interlayer dielectric device (ILD), pre-metal dielectric substrate, glass substrate, optic, rigid disk, semiconductor, micro-electro-mechanical system, and low and high dielectric constant film) and can contain any suitable dielectric layer (e.g., insulating layer).
- the substrate typically is a microelectronic (e.g., semiconductor) substrate.
- the dielectric layer can be any suitable dielectric material and typically has a dielectric constant of about 4 or less.
- the dielectric material can comprise silicon dioxide or oxidized silicon dioxides like carbon-doped silicon dioxide and aluminosilicates.
- the dielectric layer also can be a porous metal oxide, glass, or any other suitable high or low- ⁇ dielectric layer.
- the dielectric layer preferably comprises silicon oxide, silicon nitride, silicon oxynitride, silicon carbide, polysilicon, or any other silicon-containing material with a dielectric constant of about 3.5 or less.
- the substrate optionally further comprises a secondary layer (e.g., a polishing stop layer).
- the secondary layer can be a metal layer or a second dielectric layer, and can comprise tungsten, aluminum, tantalum, platinum, rhodium, silicon nitride, silicon carbide, and the like. In some embodiments, the substrate does not contain any exposed metal surfaces.
- the substrate comprises a silicon dioxide layer and a silicon nitride layer.
- the substrate comprises only silicon dioxide (as in an ILD substrate).
- the substrate comprises polysilicon, silicon dioxide, and silicon nitride.
- the silicon dioxide layer is polished with a selectivity of about 80 or greater relative to the silicon nitride layer (i.e., the oxide to nitride selectivity is about 80 or greater).
- the oxide to nitride selectivity is about 100 or greater (e.g., about 120 or greater or even about 150 or greater).
- the CMP system is particularly suited for use in conjunction with a chemical- mechanical polishing (CMP) apparatus.
- the apparatus comprises a platen, which, when in use, is in motion and has a velocity that results from orbital, linear, or circular motion, a polishing pad in contact with the platen and moving with the platen when in motion, and a carrier that holds a substrate to be polished by contacting and moving the substrate relative to the surface of the polishing pad intended to contact a substrate to be polished.
- the polishing of the substrate takes place by the substrate being placed in contact with the polishing pad and then the polishing pad moving relative to the substrate, typically with a polishing composition of the invention therebetween, so as to abrade at least a portion of the substrate to polish the substrate.
- the polishing composition can be prepared as a single slurry that is delivered to the CMP apparatus (e.g., a single concentrated slurry that is diluted with water upon delivery), or can be prepared as two slurries containing different chemical components, which are delivered simultaneously to the polishing pad of the CMP apparatus.
- the CMP apparatus can be any suitable CMP apparatus, many of which are known in the art.
- the CMP apparatus optionally comprises more than one platen such that the substrate can be polished with alternating polishing conditions, polishing process can involve periods of altered polishing.
- the CMP apparatus optionally further comprises an endpoint detection system, many of which are known in the art.
- the polishing pad can be any suitable polishing pad, many of which are known in the art.
- the polishing pad comprises a polishing layer having a surface texture consisting of grooves and/or pores.
- Such polishing pad conditioning can be performed in situ or ex situ, for example by a diamond grid.
- polishing compositions having a pH of about 5 comprising polishing additives having a pK a of about 3 to about 9 have good silicon dioxide removal rates and high silicon dioxide to silicon nitride selectivity.
- Similar substrates comprising silicon dioxide and silicon nitride layers were polished with different polishing compositions (Polishing Compositions 1 A-l W).
- Each of the polishing compositions comprised 0.5 wt.% ceria and sufficient KOH or HNO 3 to adjust the pH to 5.
- Polishing Composition 1 A (control) contained no polishing additive.
- Polishing Compositions 1B-1O contained 0.1 wt.% 3-aminophenol, anthranilic acid, piperazine, pyridine, imidazole, pynole-2-carboxylic acid, 2,3-pyridinedicarboxylic acid, 3- hydroxypicolinic acid, 2-pyridinecarboxylic acid, 4-hydroxybenzoic acid, cyclohexane carboxylic acid, 2-phenylacetic acid, benzoic acid, and glutamic acid, respectively.
- Polishing Compositions 1P-1W contained 0.1 wt.%> glycine, proline, and benzene sulfonic acid, malic acid, citric acid, oxalic acid, terephthalic acid, salicylic acid, respectively.
- EXAMPLE 2 This example demonstrates the dependence of substrate layer removal rates and selectivity on the dosage of the polishing additive in the polishing composition.
- Similar substrates comprising silicon dioxide and silicon nitride layers were polished with different polishing compositions (Polishing Compositions 2A-2C).
- Each of the polishing compositions comprised 0.3 wt.% ceria, a polishing additive at concentrations of 500 ppm, 1000 ppm, and 3000 ppm, and sufficient KOH or HNO 3 to adjust the pH to 5.3.
- Polishing Compositions 2A-2C (invention) contained anthranilic acid, pyrrole-2-carboxylic acid, and 3-hydroxy-2-pyridine carboxylic acid, respectively.
- EXAMPLE 3 This example demonstrates the dependence of the silicon-based dielectric layer removal rates and selectivity on the pH of the polishing composition.
- Similar substrates comprising silicon dioxide and silicon nitride layers were polished with different polishing compositions (Polishing Compositions 3A-3C).
- Each of the polishing compositions comprised 0.3 wt.% ceria and sufficient KOH or HNO to adjust the pH to 4.4, 5.0, or 5.6 as indicated.
- Polishing Compositions 3A-3C (invention) also contained 0.1 wt.% anthranilic acid, pyrrole-2-carboxylic acid, and 3-hydroxypicolinic acid, respectively.
- EXAMPLE 4 This example demonstrates the dependence of the silicon-based dielectric layer removal rates and selectivity on the pH of the polishing composition.
- Similar substrates comprising silicon dioxide and silicon nitride layers were polished with different polishing compositions (Polishing Compositions 4A-4C).
- Each of the polishing compositions comprised 0.15 wt.% ceria and sufficient KOH or HNO 3 to adjust the pH to 4 or 5 as indicated.
- Polishing Compositions 4A-4C (invention) also contained 0.1 wt.% orthanilic acid, metanilic acid, and anthranilic acid, respectively.
- the silicon dioxide removal rate (RR), silicon nitride removal rate (RR), and selectivity were determined for each of the polishing compositions, and the results are summarized in Table 4. Table 4:
Abstract
Description
Claims
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006503246A JP4927526B2 (en) | 2003-02-03 | 2004-02-02 | Polishing method of substrate having silicon dioxide layer and silicon nitride layer, and chemical mechanical polishing system |
US10/543,848 US7442645B2 (en) | 2003-02-03 | 2004-02-02 | Method of polishing a silicon-containing dielectric |
EP04707432.3A EP1601735B1 (en) | 2003-02-03 | 2004-02-02 | Method of polishing a silicon-containing dielectric |
CN200480002763.4A CN1742066B (en) | 2003-02-03 | 2004-02-02 | The siliceous dielectric method of polishing |
KR1020117028628A KR101281967B1 (en) | 2003-02-03 | 2004-02-02 | Method of polishing a silicon-containing dielectric |
US12/239,249 US8486169B2 (en) | 2003-02-03 | 2008-09-26 | Method of polishing a silicon-containing dielectric |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/356,970 US7071105B2 (en) | 2003-02-03 | 2003-02-03 | Method of polishing a silicon-containing dielectric |
US10/356,970 | 2003-02-03 |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US10/356,970 Continuation-In-Part US7071105B2 (en) | 2003-02-03 | 2003-02-03 | Method of polishing a silicon-containing dielectric |
Related Child Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US10543848 A-371-Of-International | 2004-02-02 | ||
US12/239,249 Division US8486169B2 (en) | 2003-02-03 | 2008-09-26 | Method of polishing a silicon-containing dielectric |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2004069947A1 true WO2004069947A1 (en) | 2004-08-19 |
Family
ID=32770920
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US2004/002908 WO2004069947A1 (en) | 2003-02-03 | 2004-02-02 | Method of polishing a silicon-containing dielectric |
Country Status (7)
Country | Link |
---|---|
US (4) | US7071105B2 (en) |
EP (1) | EP1601735B1 (en) |
JP (1) | JP4927526B2 (en) |
KR (2) | KR20050098288A (en) |
CN (1) | CN1742066B (en) |
TW (1) | TWI283022B (en) |
WO (1) | WO2004069947A1 (en) |
Cited By (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2004076574A3 (en) * | 2003-02-27 | 2004-12-23 | Cabot Microelectronics Corp | Cmp composition comprising a sulfonic acid and a method for polishing noble metals |
JP2006114713A (en) * | 2004-10-15 | 2006-04-27 | Fujimi Inc | Polishing composition and polishing method using the same |
JP2006269910A (en) * | 2005-03-25 | 2006-10-05 | Fuji Photo Film Co Ltd | Polishing liquid for metal, and polishing method using same |
JP2006318952A (en) * | 2005-05-10 | 2006-11-24 | Hitachi Chem Co Ltd | Cmp abrasive and method of polishing substrate |
WO2007108926A2 (en) * | 2006-03-13 | 2007-09-27 | Cabot Microelectronics Corporation | Composition and method to polish silicon nitride |
US7316603B2 (en) | 2002-01-22 | 2008-01-08 | Cabot Microelectronics Corporation | Compositions and methods for tantalum CMP |
DE102007035992A1 (en) | 2007-05-25 | 2008-11-27 | Evonik Degussa Gmbh | Ceria, silica or phyllosilicate and amino acid-containing dispersion |
JP2009507659A (en) * | 2005-09-09 | 2009-02-26 | サン−ゴバン セラミックス アンド プラスティクス,インコーポレイティド | Conductive hydrocarbon fluid |
EP2133400A1 (en) | 2008-06-10 | 2009-12-16 | Evonik Degussa GmbH | Ceroxide and dispersion containing particulate additive |
JP2010501121A (en) * | 2006-08-16 | 2010-01-14 | アプライド マテリアルズ インコーポレイテッド | Selective chemicals for fixed polish CMP |
US7803203B2 (en) | 2005-09-26 | 2010-09-28 | Cabot Microelectronics Corporation | Compositions and methods for CMP of semiconductor materials |
CN101906270A (en) * | 2009-06-08 | 2010-12-08 | 安集微电子科技(上海)有限公司 | Chemically-mechanical polishing solution |
CN101906359A (en) * | 2009-06-08 | 2010-12-08 | 安集微电子科技(上海)有限公司 | Chemically mechanical polishing cleaning liquid |
US8353740B2 (en) | 2005-09-09 | 2013-01-15 | Saint-Gobain Ceramics & Plastics, Inc. | Conductive hydrocarbon fluid |
US8425276B2 (en) | 2007-11-14 | 2013-04-23 | Showa Denko K.K. | Polishing composition |
US8546261B2 (en) | 2010-02-25 | 2013-10-01 | Samsung Electronics Co., Ltd. | Slurry for polishing and planarization method of insulating layer using the same |
US9633863B2 (en) | 2012-07-11 | 2017-04-25 | Cabot Microelectronics Corporation | Compositions and methods for selective polishing of silicon nitride materials |
US9803107B2 (en) | 2015-02-12 | 2017-10-31 | Asahi Glass Company, Limited | Polishing agent, polishing method and method for manufacturing semiconductor integrated circuit device |
WO2020117441A1 (en) * | 2018-12-04 | 2020-06-11 | Cabot Microelectronics Corporation | Composition and method for copper barrier cmp |
WO2020117438A1 (en) * | 2018-12-04 | 2020-06-11 | Cabot Microelectronics Corporation | Composition and method for cobalt cmp |
Families Citing this family (148)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2004101849A (en) * | 2002-09-09 | 2004-04-02 | Mitsubishi Gas Chem Co Inc | Detergent composition |
US7071105B2 (en) * | 2003-02-03 | 2006-07-04 | Cabot Microelectronics Corporation | Method of polishing a silicon-containing dielectric |
US20050028450A1 (en) * | 2003-08-07 | 2005-02-10 | Wen-Qing Xu | CMP slurry |
US7514363B2 (en) * | 2003-10-23 | 2009-04-07 | Dupont Air Products Nanomaterials Llc | Chemical-mechanical planarization composition having benzenesulfonic acid and per-compound oxidizing agents, and associated method for use |
US20050189322A1 (en) * | 2004-02-27 | 2005-09-01 | Lane Sarah J. | Compositions and methods for chemical mechanical polishing silica and silicon nitride |
TW200613485A (en) * | 2004-03-22 | 2006-05-01 | Kao Corp | Polishing composition |
US20060021972A1 (en) * | 2004-07-28 | 2006-02-02 | Lane Sarah J | Compositions and methods for chemical mechanical polishing silicon dioxide and silicon nitride |
JP4814502B2 (en) | 2004-09-09 | 2011-11-16 | 株式会社フジミインコーポレーテッド | Polishing composition and polishing method using the same |
US20060097219A1 (en) * | 2004-11-08 | 2006-05-11 | Applied Materials, Inc. | High selectivity slurry compositions for chemical mechanical polishing |
JP4027929B2 (en) * | 2004-11-30 | 2007-12-26 | 花王株式会社 | Polishing liquid composition for semiconductor substrate |
US7208325B2 (en) * | 2005-01-18 | 2007-04-24 | Applied Materials, Inc. | Refreshing wafers having low-k dielectric materials |
US7449124B2 (en) * | 2005-02-25 | 2008-11-11 | 3M Innovative Properties Company | Method of polishing a wafer |
US7081041B1 (en) | 2005-02-28 | 2006-07-25 | Hitachi Global Storage Technologies Netherlands B.V. | Manufacturing method for forming a write head top pole using chemical mechanical polishing with a DLC stop layer |
US20060205218A1 (en) * | 2005-03-09 | 2006-09-14 | Mueller Brian L | Compositions and methods for chemical mechanical polishing thin films and dielectric materials |
US7497938B2 (en) * | 2005-03-22 | 2009-03-03 | Cabot Microelectronics Corporation | Tribo-chronoamperometry as a tool for CMP application |
US7731864B2 (en) * | 2005-06-29 | 2010-06-08 | Intel Corporation | Slurry for chemical mechanical polishing of aluminum |
US7842193B2 (en) * | 2005-09-29 | 2010-11-30 | Fujifilm Corporation | Polishing liquid |
US20070077865A1 (en) * | 2005-10-04 | 2007-04-05 | Cabot Microelectronics Corporation | Method for controlling polysilicon removal |
WO2007120259A2 (en) * | 2005-11-08 | 2007-10-25 | Advanced Technology Materials, Inc. | Formulations for removing copper-containing post-etch residue from microelectronic devices |
US20070129682A1 (en) * | 2005-12-02 | 2007-06-07 | Tracee Eidenschink | Guidewire with perfusion capability |
US7732393B2 (en) * | 2006-03-20 | 2010-06-08 | Cabot Microelectronics Corporation | Oxidation-stabilized CMP compositions and methods |
KR100800481B1 (en) * | 2006-08-16 | 2008-02-04 | 삼성전자주식회사 | Chemical mechanical polishing method and a method of forming isolation layer comprising the polishing method |
US7776230B2 (en) * | 2006-08-30 | 2010-08-17 | Cabot Microelectronics Corporation | CMP system utilizing halogen adduct |
US7723234B2 (en) | 2006-11-22 | 2010-05-25 | Clarkson University | Method for selective CMP of polysilicon |
US7629258B2 (en) | 2006-11-22 | 2009-12-08 | Clarkson University | Method for one-to-one polishing of silicon nitride and silicon oxide |
US20080116171A1 (en) * | 2006-11-22 | 2008-05-22 | Clarkson University | Method For The Preferential Polishing Of Silicon Nitride Versus Silicon Oxide |
KR100725803B1 (en) * | 2006-12-05 | 2007-06-08 | 제일모직주식회사 | Slurry compositions for polishing silicone wafer finally and methods for polishing silicone wafer finally by using the same |
US9343330B2 (en) * | 2006-12-06 | 2016-05-17 | Cabot Microelectronics Corporation | Compositions for polishing aluminum/copper and titanium in damascene structures |
US8591764B2 (en) * | 2006-12-20 | 2013-11-26 | 3M Innovative Properties Company | Chemical mechanical planarization composition, system, and method of use |
DE102006061891A1 (en) * | 2006-12-28 | 2008-07-03 | Basf Se | Composition for polishing surfaces, especially of semiconductors, comprises a lanthanide oxide abrasive, a polymeric dispersant, a polysaccharide gelling agent and water |
WO2008095078A1 (en) * | 2007-01-31 | 2008-08-07 | Advanced Technology Materials, Inc. | Stabilization of polymer-silica dispersions for chemical mechanical polishing slurry applications |
KR100807220B1 (en) * | 2007-02-01 | 2008-02-28 | 삼성전자주식회사 | Method of manufacturing non-volatile memory device |
US20080314872A1 (en) * | 2007-06-19 | 2008-12-25 | Ferro Corporation | Chemical-Mechanical Polishing Compositions Containing Aspartame And Methods Of Making And Using The Same |
US20100261632A1 (en) * | 2007-08-02 | 2010-10-14 | Advanced Technology Materials, Inc. | Non-fluoride containing composition for the removal of residue from a microelectronic device |
US20090031636A1 (en) * | 2007-08-03 | 2009-02-05 | Qianqiu Ye | Polymeric barrier removal polishing slurry |
SG184772A1 (en) * | 2007-09-21 | 2012-10-30 | Cabot Microelectronics Corp | Polishing composition and method utilizing abrasive particles treated with an aminosilane |
US7955520B2 (en) * | 2007-11-27 | 2011-06-07 | Cabot Microelectronics Corporation | Copper-passivating CMP compositions and methods |
JP5306644B2 (en) * | 2007-12-29 | 2013-10-02 | Hoya株式会社 | Manufacturing method of mask blank substrate, manufacturing method of substrate with multilayer reflective film, manufacturing method of reflecting mask blank, and manufacturing method of reflecting mask |
US7922926B2 (en) * | 2008-01-08 | 2011-04-12 | Cabot Microelectronics Corporation | Composition and method for polishing nickel-phosphorous-coated aluminum hard disks |
CN101492592B (en) * | 2008-01-25 | 2014-01-29 | 安集微电子(上海)有限公司 | Chemico-mechanical polishing solution |
CN103131330B (en) * | 2008-02-01 | 2015-09-23 | 福吉米株式会社 | Composition for polishing and use its Ginding process |
JP5326492B2 (en) * | 2008-02-12 | 2013-10-30 | 日立化成株式会社 | Polishing liquid for CMP, polishing method for substrate, and electronic component |
JP5375025B2 (en) * | 2008-02-27 | 2013-12-25 | 日立化成株式会社 | Polishing liquid |
JP5369506B2 (en) * | 2008-06-11 | 2013-12-18 | 信越化学工業株式会社 | Abrasive for synthetic quartz glass substrate |
WO2009150938A1 (en) * | 2008-06-11 | 2009-12-17 | 信越化学工業株式会社 | Polishing agent for synthetic quartz glass substrate |
CN102105267B (en) * | 2008-06-18 | 2016-08-03 | 福吉米株式会社 | Polishing composition and utilize the finishing method of this polishing composition |
US8247327B2 (en) * | 2008-07-30 | 2012-08-21 | Cabot Microelectronics Corporation | Methods and compositions for polishing silicon-containing substrates |
EP2334749B1 (en) * | 2008-10-03 | 2012-08-29 | Basf Se | Chemical mechanical polishing (cmp) polishing solution with enhanced performance |
CN103333661B (en) | 2008-12-11 | 2015-08-19 | 日立化成株式会社 | CMP lapping liquid and use the Ginding process of this lapping liquid |
CN101475791B (en) * | 2009-01-20 | 2012-08-29 | 江苏工业学院 | Preparation and use of cerium oxide / silicon oxide compound abrasive |
WO2010139603A1 (en) * | 2009-06-05 | 2010-12-09 | Basf Se | RASPBERRY-TYPE METAL OXIDE NANOSTRUCTURES COATED WITH CeO2 NANOPARTICLES FOR CHEMICAL MECHANICAL PLANARIZATION (CMP) |
JP5827221B2 (en) * | 2009-06-22 | 2015-12-02 | キャボット マイクロエレクトロニクス コーポレイション | CMP composition and method for controlling polysilicon removal rate |
US9255214B2 (en) * | 2009-11-13 | 2016-02-09 | Basf Se | Chemical mechanical polishing (CMP) composition comprising inorganic particles and polymer particles |
JP2011110637A (en) * | 2009-11-25 | 2011-06-09 | Asahi Glass Co Ltd | Method for manufacturing glass substrate for magnetic disk |
JP5648567B2 (en) * | 2010-05-07 | 2015-01-07 | 日立化成株式会社 | Polishing liquid for CMP and polishing method using the same |
JP5141792B2 (en) * | 2010-06-29 | 2013-02-13 | 日立化成工業株式会社 | CMP polishing liquid and polishing method |
KR101906135B1 (en) | 2010-09-08 | 2018-10-10 | 바스프 에스이 | Aqueous polishing composition and process for chemically mechanically polishing substrates containing silicon oxide dielectric and polysilicon films |
CN103210047B (en) | 2010-09-08 | 2018-07-17 | 巴斯夫欧洲公司 | The diazene * dioxide of the substitution containing N and/or the aqueous polishing composition of N '-hydroxyls-diazene * oxide salts |
MY164859A (en) | 2010-09-08 | 2018-01-30 | Basf Se | Aqueous polishing composition and process for chemically mechanically polishing substrate materials for electrical, mechanical and optical devices |
JP2012069785A (en) * | 2010-09-24 | 2012-04-05 | Fujimi Inc | Polishing composition and polishing method |
US8497210B2 (en) | 2010-10-04 | 2013-07-30 | International Business Machines Corporation | Shallow trench isolation chemical mechanical planarization |
SG191038A1 (en) * | 2010-12-06 | 2013-07-31 | Moresco Corp | Composition for polishing glass substrate, and polishing slurry |
JP6096670B2 (en) | 2010-12-10 | 2017-03-15 | ビーエーエスエフ ソシエタス・ヨーロピアBasf Se | Aqueous polishing composition and method for chemically and mechanically polishing a substrate containing a silicon oxide dielectric film and a polysilicon film |
MY163010A (en) * | 2011-01-11 | 2017-07-31 | Cabot Microelectronics Corp | Metal-passivating cmp compositions and methods |
US8986524B2 (en) | 2011-01-28 | 2015-03-24 | International Business Machines Corporation | DNA sequence using multiple metal layer structure with different organic coatings forming different transient bondings to DNA |
CN102268225B (en) * | 2011-05-30 | 2014-03-26 | 上海百兰朵电子科技有限公司 | Permanent-suspension diamond grinding liquid |
EP2568024A1 (en) | 2011-09-07 | 2013-03-13 | Basf Se | A chemical mechanical polishing (cmp) composition comprising a glycoside |
WO2013035034A1 (en) | 2011-09-07 | 2013-03-14 | Basf Se | A chemical mechanical polishing (cmp) composition comprising a glycoside |
KR101411019B1 (en) * | 2011-12-29 | 2014-06-24 | 제일모직주식회사 | CMP slurry composition and polishing method using the same |
KR101385044B1 (en) * | 2011-12-30 | 2014-04-15 | 제일모직주식회사 | CMP slurry composition and polishing method using the same |
TWI573864B (en) * | 2012-03-14 | 2017-03-11 | 卡博特微電子公司 | Cmp compositions selective for oxide and nitride with high removal rate and low defectivity |
US10029915B2 (en) * | 2012-04-04 | 2018-07-24 | International Business Machines Corporation | Functionally switchable self-assembled coating compound for controlling translocation of molecule through nanopores |
US8778212B2 (en) * | 2012-05-22 | 2014-07-15 | Cabot Microelectronics Corporation | CMP composition containing zirconia particles and method of use |
US9039914B2 (en) | 2012-05-23 | 2015-05-26 | Cabot Microelectronics Corporation | Polishing composition for nickel-phosphorous-coated memory disks |
EP2858097B1 (en) | 2012-05-30 | 2019-02-27 | Kuraray Co., Ltd. | Slurry for chemical mechanical polishing and chemical mechanical polishing method |
EP2682440A1 (en) * | 2012-07-06 | 2014-01-08 | Basf Se | A chemical mechanical polishing (cmp) composition comprising a non-ionic surfactant and a carbonate salt |
US8859428B2 (en) | 2012-10-19 | 2014-10-14 | Air Products And Chemicals, Inc. | Chemical mechanical polishing (CMP) composition for shallow trench isolation (STI) applications and methods of making thereof |
JP6321022B2 (en) * | 2012-11-02 | 2018-05-09 | ローレンス リバモア ナショナル セキュリティー, エルエルシー | Method for preventing aggregation of charged colloids without losing surface activity |
US9434859B2 (en) * | 2013-09-24 | 2016-09-06 | Cabot Microelectronics Corporation | Chemical-mechanical planarization of polymer films |
US9279067B2 (en) * | 2013-10-10 | 2016-03-08 | Cabot Microelectronics Corporation | Wet-process ceria compositions for polishing substrates, and methods related thereto |
US9281210B2 (en) * | 2013-10-10 | 2016-03-08 | Cabot Microelectronics Corporation | Wet-process ceria compositions for polishing substrates, and methods related thereto |
US9340706B2 (en) | 2013-10-10 | 2016-05-17 | Cabot Microelectronics Corporation | Mixed abrasive polishing compositions |
JP6191433B2 (en) * | 2013-12-11 | 2017-09-06 | 旭硝子株式会社 | Abrasive and polishing method |
US9238754B2 (en) * | 2014-03-11 | 2016-01-19 | Cabot Microelectronics Corporation | Composition for tungsten CMP |
CN104073170B (en) * | 2014-06-24 | 2015-11-18 | 江苏天恒纳米科技股份有限公司 | A kind of aluminum alloy surface Ultra-precision Turning special-purpose nanometer slurry and preparation method thereof |
KR102458508B1 (en) * | 2014-06-25 | 2022-10-26 | 씨엠씨 머티리얼즈, 인코포레이티드 | Colloidal silica chemical-mechanical polishing concentrate |
JP6435689B2 (en) | 2014-07-25 | 2018-12-12 | Agc株式会社 | Abrasive, polishing method, and additive liquid for polishing |
US9530655B2 (en) * | 2014-09-08 | 2016-12-27 | Taiwan Semiconductor Manufacting Company, Ltd. | Slurry composition for chemical mechanical polishing of Ge-based materials and devices |
CN104263320B (en) * | 2014-09-10 | 2016-03-02 | 句容金猴机械研究所有限公司 | High temperature resistant abrasive of a kind of mechanical means and preparation method thereof |
JP5893700B1 (en) | 2014-09-26 | 2016-03-23 | 花王株式会社 | Polishing liquid composition for silicon oxide film |
JP6694674B2 (en) | 2014-11-07 | 2020-05-20 | 株式会社フジミインコーポレーテッド | Polishing method and polishing composition |
CN104650740B (en) * | 2014-12-10 | 2017-07-14 | 深圳市力合材料有限公司 | A kind of polishing fluid of achievable fast and stable polishing |
SG11201705419RA (en) * | 2015-01-12 | 2017-07-28 | Versum Mat Us Llc | Composite abrasive particles for chemical mechanical planarization composition and method of use thereof |
WO2016132952A1 (en) * | 2015-02-20 | 2016-08-25 | 株式会社フジミインコーポレーテッド | Polishing composition |
US9758697B2 (en) | 2015-03-05 | 2017-09-12 | Cabot Microelectronics Corporation | Polishing composition containing cationic polymer additive |
US10414947B2 (en) | 2015-03-05 | 2019-09-17 | Cabot Microelectronics Corporation | Polishing composition containing ceria particles and method of use |
US9505952B2 (en) | 2015-03-05 | 2016-11-29 | Cabot Microelectronics Corporation | Polishing composition containing ceria abrasive |
US10032644B2 (en) * | 2015-06-05 | 2018-07-24 | Versum Materials Us, Llc | Barrier chemical mechanical planarization slurries using ceria-coated silica abrasives |
US10619075B2 (en) * | 2015-07-13 | 2020-04-14 | Cabot Microelectronics Corporation | Self-stopping polishing composition and method for bulk oxide planarization |
JP6879995B2 (en) * | 2015-07-13 | 2021-06-02 | シーエムシー マテリアルズ,インコーポレイティド | Methods and Compositions for Machining Dielectric Substrates |
KR20180038051A (en) * | 2015-09-03 | 2018-04-13 | 캐보트 마이크로일렉트로닉스 코포레이션 | Method and composition for dielectric substrate processing |
US10144850B2 (en) * | 2015-09-25 | 2018-12-04 | Versum Materials Us, Llc | Stop-on silicon containing layer additive |
KR102543680B1 (en) | 2015-12-17 | 2023-06-16 | 솔브레인 주식회사 | Slurry composition for chemical mechanical polishing |
JP6657935B2 (en) * | 2015-12-25 | 2020-03-04 | 日立化成株式会社 | Polishing liquid |
WO2017117404A1 (en) * | 2015-12-29 | 2017-07-06 | Cabot Microelectronics Corporation | Cmp processing composition comprising alkylamine and cyclodextrin |
KR102226055B1 (en) | 2016-08-26 | 2021-03-10 | 페로 코포레이션 | Slurry composition and optional silica polishing method |
WO2018075409A2 (en) | 2016-10-17 | 2018-04-26 | Cabot Microelectronics Corporation | Cmp compositions selective for oxide and nitride with improved dishing and pattern selectivity |
US10570315B2 (en) * | 2016-11-08 | 2020-02-25 | Fujimi Incorporated | Buffered slurry formulation for cobalt CMP |
CN108117839B (en) | 2016-11-29 | 2021-09-17 | 安集微电子科技(上海)股份有限公司 | Chemical mechanical polishing solution with high silicon nitride selectivity |
CN108117840B (en) * | 2016-11-29 | 2021-09-21 | 安集微电子科技(上海)股份有限公司 | Silicon nitride chemical mechanical polishing solution |
US10286518B2 (en) | 2017-01-31 | 2019-05-14 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Chemical mechanical polishing method for tungsten |
US9984895B1 (en) | 2017-01-31 | 2018-05-29 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Chemical mechanical polishing method for tungsten |
US20180244955A1 (en) * | 2017-02-28 | 2018-08-30 | Versum Materials Us, Llc | Chemical Mechanical Planarization of Films Comprising Elemental Silicon |
US10319601B2 (en) * | 2017-03-23 | 2019-06-11 | Applied Materials, Inc. | Slurry for polishing of integrated circuit packaging |
WO2018179061A1 (en) * | 2017-03-27 | 2018-10-04 | 日立化成株式会社 | Polishing liquid, polishing liquid set, and polishing method |
CN110462791B (en) | 2017-03-27 | 2023-06-16 | 株式会社力森诺科 | Suspension and grinding method |
US10106705B1 (en) * | 2017-03-29 | 2018-10-23 | Fujifilm Planar Solutions, LLC | Polishing compositions and methods of use thereof |
CN113637412A (en) * | 2017-04-17 | 2021-11-12 | 嘉柏微电子材料股份公司 | Self-stopping polishing composition and method for bulk oxide planarization |
CN109251677B (en) * | 2017-07-13 | 2021-08-13 | 安集微电子科技(上海)股份有限公司 | Chemical mechanical polishing solution |
CN109251680A (en) * | 2017-07-13 | 2019-01-22 | 安集微电子科技(上海)股份有限公司 | A kind of chemical mechanical polishing liquid |
US10428241B2 (en) | 2017-10-05 | 2019-10-01 | Fujifilm Electronic Materials U.S.A., Inc. | Polishing compositions containing charged abrasive |
KR102533083B1 (en) * | 2017-12-18 | 2023-05-17 | 주식회사 케이씨텍 | Chemical mechanical polishing slurry composition of wafer contaning poly-silicon |
KR20190074597A (en) | 2017-12-20 | 2019-06-28 | 주식회사 케이씨텍 | Polishing slurry composition for sti process |
US10584266B2 (en) * | 2018-03-14 | 2020-03-10 | Cabot Microelectronics Corporation | CMP compositions containing polymer complexes and agents for STI applications |
WO2020021680A1 (en) | 2018-07-26 | 2020-01-30 | 日立化成株式会社 | Slurry and polishing method |
US11572490B2 (en) | 2018-03-22 | 2023-02-07 | Showa Denko Materials Co., Ltd. | Polishing liquid, polishing liquid set, and polishing method |
US11643599B2 (en) | 2018-07-20 | 2023-05-09 | Versum Materials Us, Llc | Tungsten chemical mechanical polishing for reduced oxide erosion |
US11549034B2 (en) * | 2018-08-09 | 2023-01-10 | Versum Materials Us, Llc | Oxide chemical mechanical planarization (CMP) polishing compositions |
US20200102475A1 (en) * | 2018-09-28 | 2020-04-02 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Chemical mecahnical polishing composition and method of polishing silcon dioxide over silicon nitiride |
US11180678B2 (en) * | 2018-10-31 | 2021-11-23 | Versum Materials Us, Llc | Suppressing SiN removal rates and reducing oxide trench dishing for Shallow Trench Isolation (STI) process |
US10763119B2 (en) | 2018-12-19 | 2020-09-01 | Fujifilm Electronic Materials U.S.A., Inc. | Polishing compositions and methods of using same |
US10759970B2 (en) | 2018-12-19 | 2020-09-01 | Fujifilm Electronic Materials U.S.A., Inc. | Polishing compositions and methods of using same |
KR20200082827A (en) * | 2018-12-31 | 2020-07-08 | 주식회사 동진쎄미켐 | CMP particle and CMP slurry composition |
US11608451B2 (en) | 2019-01-30 | 2023-03-21 | Versum Materials Us, Llc | Shallow trench isolation (STI) chemical mechanical planarization (CMP) polishing with tunable silicon oxide and silicon nitride removal rates |
US20200270479A1 (en) * | 2019-02-26 | 2020-08-27 | Versum Materials Us, Llc | Shallow Trench Isolation Chemical And Mechanical Polishing Slurry |
US20220195245A1 (en) * | 2019-04-29 | 2022-06-23 | Versum Materials Us, Llc | Selective Chemical Mechanical Planarization Polishing |
US20220251422A1 (en) * | 2019-06-06 | 2022-08-11 | Showa Denko Materials Co., Ltd. | Polishing solution and polishing method |
KR20220087495A (en) * | 2019-10-22 | 2022-06-24 | 씨엠씨 머티리얼즈, 인코포레이티드 | Compositions and Methods for Silicon Oxide and Carbon Doped Silicon Oxide CMP |
JP7409918B2 (en) * | 2020-03-13 | 2024-01-09 | 株式会社フジミインコーポレーテッド | Polishing composition, method for producing polishing composition, polishing method, and method for producing semiconductor substrate |
US11680186B2 (en) | 2020-11-06 | 2023-06-20 | Fujifilm Electronic Materials U.S.A., Inc. | Polishing compositions and methods of using same |
CN114621683A (en) * | 2020-12-11 | 2022-06-14 | 安集微电子(上海)有限公司 | Chemical mechanical polishing solution and use method thereof |
KR20220120864A (en) * | 2021-02-24 | 2022-08-31 | 에스케이하이닉스 주식회사 | Slurry composition for polishing silicone oxide film |
WO2023013059A1 (en) * | 2021-08-06 | 2023-02-09 | 昭和電工マテリアルズ株式会社 | Cmp polishing liquid, cmp polishing liquid set, and polishing method |
KR20230063182A (en) * | 2021-11-01 | 2023-05-09 | 주식회사 케이씨텍 | Polishing slurry composition |
WO2023149925A1 (en) * | 2022-02-07 | 2023-08-10 | Araca, Inc. | Chemical mechanical planarization slurry processing techniques and systems and methods for polishing substrate using the same |
CN115160933B (en) * | 2022-07-27 | 2023-11-28 | 河北工业大学 | Alkaline polishing solution for cobalt CMP of cobalt interconnection integrated circuit and preparation method thereof |
CN115746711B (en) * | 2022-11-08 | 2023-07-14 | 东莞领航电子新材料有限公司 | Aluminum alloy mirror polishing solution and polishing method |
CN115710464A (en) * | 2022-11-11 | 2023-02-24 | 博力思(天津)电子科技有限公司 | Silicon oxide dielectric layer chemical mechanical polishing solution with low surface roughness |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5738800A (en) * | 1996-09-27 | 1998-04-14 | Rodel, Inc. | Composition and method for polishing a composite of silica and silicon nitride |
EP1061111A1 (en) * | 1998-02-24 | 2000-12-20 | Showa Denko Kabushiki Kaisha | Abrasive composition for polishing semiconductor device and process for producing semiconductor device with the same |
EP1138733A2 (en) * | 2000-03-27 | 2001-10-04 | JSR Corporation | Aqueous dispersion for chemical mechanical polishing of insulating films |
WO2003068883A1 (en) * | 2002-02-11 | 2003-08-21 | Cabot Microelectronics Corporation | Anionic abrasive particles treated with positively-charged polyelectrolytes for cmp |
Family Cites Families (49)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4169337A (en) | 1978-03-30 | 1979-10-02 | Nalco Chemical Company | Process for polishing semi-conductor materials |
US4462188A (en) | 1982-06-21 | 1984-07-31 | Nalco Chemical Company | Silica sol compositions for polishing silicon wafers |
US4867757A (en) | 1988-09-09 | 1989-09-19 | Nalco Chemical Company | Lapping slurry compositions with improved lap rate |
US5391258A (en) | 1993-05-26 | 1995-02-21 | Rodel, Inc. | Compositions and methods for polishing |
US5460701A (en) | 1993-07-27 | 1995-10-24 | Nanophase Technologies Corporation | Method of making nanostructured materials |
US5489233A (en) | 1994-04-08 | 1996-02-06 | Rodel, Inc. | Polishing pads and methods for their use |
US5527423A (en) | 1994-10-06 | 1996-06-18 | Cabot Corporation | Chemical mechanical polishing slurry for metal layers |
US5860848A (en) * | 1995-06-01 | 1999-01-19 | Rodel, Inc. | Polishing silicon wafers with improved polishing slurries |
US5614444A (en) | 1995-06-06 | 1997-03-25 | Sematech, Inc. | Method of using additives with silica-based slurries to enhance selectivity in metal CMP |
US5763325A (en) * | 1995-07-04 | 1998-06-09 | Fujitsu Limited | Fabrication process of a semiconductor device using a slurry containing manganese oxide |
US5958794A (en) | 1995-09-22 | 1999-09-28 | Minnesota Mining And Manufacturing Company | Method of modifying an exposed surface of a semiconductor wafer |
EP0786504A3 (en) | 1996-01-29 | 1998-05-20 | Fujimi Incorporated | Polishing composition |
US5733176A (en) * | 1996-05-24 | 1998-03-31 | Micron Technology, Inc. | Polishing pad and method of use |
WO1998004646A1 (en) * | 1996-07-25 | 1998-02-05 | Ekc Technology, Inc. | Chemical mechanical polishing composition and process |
US6132637A (en) | 1996-09-27 | 2000-10-17 | Rodel Holdings, Inc. | Composition and method for polishing a composite of silica and silicon nitride |
US5968239A (en) | 1996-11-12 | 1999-10-19 | Kabushiki Kaisha Toshiba | Polishing slurry |
US5759917A (en) | 1996-12-30 | 1998-06-02 | Cabot Corporation | Composition for oxide CMP |
DE69830676D1 (en) | 1997-01-10 | 2005-08-04 | Texas Instruments Inc | CMP suspension with high selectivity |
US6126532A (en) | 1997-04-18 | 2000-10-03 | Cabot Corporation | Polishing pads for a semiconductor substrate |
ES2187960T3 (en) | 1997-04-18 | 2003-06-16 | Cabot Microelectronics Corp | STAMP TO POLISH FOR A SEMI-CONDUCTOR SUBSTRATE. |
US6322600B1 (en) | 1997-04-23 | 2001-11-27 | Advanced Technology Materials, Inc. | Planarization compositions and methods for removing interlayer dielectric films |
US6194317B1 (en) * | 1998-04-30 | 2001-02-27 | 3M Innovative Properties Company | Method of planarizing the upper surface of a semiconductor wafer |
JPH10321570A (en) * | 1997-05-15 | 1998-12-04 | Tokuyama Corp | Abrasive for polishing semiconductor wafer, its manufacture, and polishing method |
US6168823B1 (en) * | 1997-10-09 | 2001-01-02 | Wisconsin Alumni Research Foundation | Production of substantially pure kappa casein macropeptide |
US6359471B1 (en) | 1998-03-09 | 2002-03-19 | Infineon Technologies North America Corp. | Mixed swing voltage repeaters for high resistance or high capacitance signal lines and methods therefor |
US6114249A (en) | 1998-03-10 | 2000-09-05 | International Business Machines Corporation | Chemical mechanical polishing of multiple material substrates and slurry having improved selectivity |
US6117000A (en) | 1998-07-10 | 2000-09-12 | Cabot Corporation | Polishing pad for a semiconductor substrate |
US6299659B1 (en) | 1998-08-05 | 2001-10-09 | Showa Denko K.K. | Polishing material composition and polishing method for polishing LSI devices |
US6863593B1 (en) | 1998-11-02 | 2005-03-08 | Applied Materials, Inc. | Chemical mechanical polishing a substrate having a filler layer and a stop layer |
SG78405A1 (en) * | 1998-11-17 | 2001-02-20 | Fujimi Inc | Polishing composition and rinsing composition |
US6740590B1 (en) | 1999-03-18 | 2004-05-25 | Kabushiki Kaisha Toshiba | Aqueous dispersion, aqueous dispersion for chemical mechanical polishing used for manufacture of semiconductor devices, method for manufacture of semiconductor devices, and method for formation of embedded writing |
JP2001007059A (en) | 1999-06-18 | 2001-01-12 | Hitachi Chem Co Ltd | Cmp-polishing agent and method for polishing substrate |
JP3957924B2 (en) * | 1999-06-28 | 2007-08-15 | 株式会社東芝 | CMP polishing method |
US6488730B2 (en) | 1999-07-01 | 2002-12-03 | Cheil Industries, Inc. | Polishing composition |
TWI227726B (en) | 1999-07-08 | 2005-02-11 | Eternal Chemical Co Ltd | Chemical-mechanical abrasive composition and method |
JP4555936B2 (en) | 1999-07-21 | 2010-10-06 | 日立化成工業株式会社 | CMP polishing liquid |
US6855266B1 (en) * | 1999-08-13 | 2005-02-15 | Cabot Microelectronics Corporation | Polishing system with stopping compound and method of its use |
TW499471B (en) * | 1999-09-01 | 2002-08-21 | Eternal Chemical Co Ltd | Chemical mechanical/abrasive composition for semiconductor processing |
US6350393B2 (en) | 1999-11-04 | 2002-02-26 | Cabot Microelectronics Corporation | Use of CsOH in a dielectric CMP slurry |
US6468910B1 (en) | 1999-12-08 | 2002-10-22 | Ramanathan Srinivasan | Slurry for chemical mechanical polishing silicon dioxide |
US6491843B1 (en) | 1999-12-08 | 2002-12-10 | Eastman Kodak Company | Slurry for chemical mechanical polishing silicon dioxide |
JP2003530713A (en) | 2000-04-11 | 2003-10-14 | キャボット マイクロエレクトロニクス コーポレイション | Priority removal system for silicon oxide |
US6593240B1 (en) | 2000-06-28 | 2003-07-15 | Infineon Technologies, North America Corp | Two step chemical mechanical polishing process |
JP2002241739A (en) | 2001-02-20 | 2002-08-28 | Hitachi Chem Co Ltd | Polishing agent and method for polishing substrate |
US6786945B2 (en) * | 2001-02-20 | 2004-09-07 | Hitachi Chemical Co., Ltd. | Polishing compound and method for polishing substrate |
JP2003017445A (en) | 2001-06-28 | 2003-01-17 | Hitachi Chem Co Ltd | Cmp abrasive and method for polishing substrate |
JP2003017447A (en) | 2001-06-28 | 2003-01-17 | Hitachi Chem Co Ltd | Cmp abrasives and method for polishing substrate |
JP4972829B2 (en) | 2001-06-28 | 2012-07-11 | 日立化成工業株式会社 | CMP polishing agent and substrate polishing method |
US7071105B2 (en) * | 2003-02-03 | 2006-07-04 | Cabot Microelectronics Corporation | Method of polishing a silicon-containing dielectric |
-
2003
- 2003-02-03 US US10/356,970 patent/US7071105B2/en not_active Expired - Fee Related
-
2004
- 2004-02-02 WO PCT/US2004/002908 patent/WO2004069947A1/en active Application Filing
- 2004-02-02 KR KR1020057014199A patent/KR20050098288A/en not_active Application Discontinuation
- 2004-02-02 CN CN200480002763.4A patent/CN1742066B/en not_active Expired - Lifetime
- 2004-02-02 KR KR1020117028628A patent/KR101281967B1/en active IP Right Grant
- 2004-02-02 US US10/543,848 patent/US7442645B2/en not_active Expired - Lifetime
- 2004-02-02 EP EP04707432.3A patent/EP1601735B1/en not_active Expired - Lifetime
- 2004-02-02 JP JP2006503246A patent/JP4927526B2/en not_active Expired - Lifetime
- 2004-02-03 TW TW093102405A patent/TWI283022B/en not_active IP Right Cessation
-
2006
- 2006-03-07 US US11/370,077 patent/US20060144824A1/en not_active Abandoned
-
2008
- 2008-09-26 US US12/239,249 patent/US8486169B2/en active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5738800A (en) * | 1996-09-27 | 1998-04-14 | Rodel, Inc. | Composition and method for polishing a composite of silica and silicon nitride |
EP1061111A1 (en) * | 1998-02-24 | 2000-12-20 | Showa Denko Kabushiki Kaisha | Abrasive composition for polishing semiconductor device and process for producing semiconductor device with the same |
EP1138733A2 (en) * | 2000-03-27 | 2001-10-04 | JSR Corporation | Aqueous dispersion for chemical mechanical polishing of insulating films |
WO2003068883A1 (en) * | 2002-02-11 | 2003-08-21 | Cabot Microelectronics Corporation | Anionic abrasive particles treated with positively-charged polyelectrolytes for cmp |
Cited By (29)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7097541B2 (en) | 2002-01-22 | 2006-08-29 | Cabot Microelectronics Corporation | CMP method for noble metals |
US7316603B2 (en) | 2002-01-22 | 2008-01-08 | Cabot Microelectronics Corporation | Compositions and methods for tantalum CMP |
WO2004076574A3 (en) * | 2003-02-27 | 2004-12-23 | Cabot Microelectronics Corp | Cmp composition comprising a sulfonic acid and a method for polishing noble metals |
JP2006114713A (en) * | 2004-10-15 | 2006-04-27 | Fujimi Inc | Polishing composition and polishing method using the same |
JP2006269910A (en) * | 2005-03-25 | 2006-10-05 | Fuji Photo Film Co Ltd | Polishing liquid for metal, and polishing method using same |
JP2006318952A (en) * | 2005-05-10 | 2006-11-24 | Hitachi Chem Co Ltd | Cmp abrasive and method of polishing substrate |
JP2009507659A (en) * | 2005-09-09 | 2009-02-26 | サン−ゴバン セラミックス アンド プラスティクス,インコーポレイティド | Conductive hydrocarbon fluid |
US8353740B2 (en) | 2005-09-09 | 2013-01-15 | Saint-Gobain Ceramics & Plastics, Inc. | Conductive hydrocarbon fluid |
US7803203B2 (en) | 2005-09-26 | 2010-09-28 | Cabot Microelectronics Corporation | Compositions and methods for CMP of semiconductor materials |
US8529680B2 (en) | 2005-09-26 | 2013-09-10 | Cabot Microelectronics Corporation | Compositions for CMP of semiconductor materials |
JP2009530811A (en) * | 2006-03-13 | 2009-08-27 | キャボット マイクロエレクトロニクス コーポレイション | Compositions and methods for polishing silicon nitride |
CN101389722B (en) * | 2006-03-13 | 2012-09-05 | 卡伯特微电子公司 | Composition and method to polish silicon nitride |
KR101371939B1 (en) * | 2006-03-13 | 2014-03-07 | 캐보트 마이크로일렉트로닉스 코포레이션 | Composition and method to polish silicon nitride |
WO2007108926A3 (en) * | 2006-03-13 | 2008-03-20 | Cabot Microelectronics Corp | Composition and method to polish silicon nitride |
WO2007108926A2 (en) * | 2006-03-13 | 2007-09-27 | Cabot Microelectronics Corporation | Composition and method to polish silicon nitride |
JP2010501121A (en) * | 2006-08-16 | 2010-01-14 | アプライド マテリアルズ インコーポレイテッド | Selective chemicals for fixed polish CMP |
WO2008145482A1 (en) * | 2007-05-25 | 2008-12-04 | Evonik Degussa Gmbh | Dispersion comprising cerium oxide, silicon dioxide and amino acid |
WO2008145480A1 (en) * | 2007-05-25 | 2008-12-04 | Evonik Degussa Gmbh | Dispersion comprising cerium oxide, sheet silicate and amino acid |
DE102007035992A1 (en) | 2007-05-25 | 2008-11-27 | Evonik Degussa Gmbh | Ceria, silica or phyllosilicate and amino acid-containing dispersion |
US8425276B2 (en) | 2007-11-14 | 2013-04-23 | Showa Denko K.K. | Polishing composition |
DE102008002321A1 (en) | 2008-06-10 | 2009-12-17 | Evonik Degussa Gmbh | Cerium oxide and particulate additive containing dispersion |
EP2133400A1 (en) | 2008-06-10 | 2009-12-16 | Evonik Degussa GmbH | Ceroxide and dispersion containing particulate additive |
CN101906359A (en) * | 2009-06-08 | 2010-12-08 | 安集微电子科技(上海)有限公司 | Chemically mechanical polishing cleaning liquid |
CN101906270A (en) * | 2009-06-08 | 2010-12-08 | 安集微电子科技(上海)有限公司 | Chemically-mechanical polishing solution |
US8546261B2 (en) | 2010-02-25 | 2013-10-01 | Samsung Electronics Co., Ltd. | Slurry for polishing and planarization method of insulating layer using the same |
US9633863B2 (en) | 2012-07-11 | 2017-04-25 | Cabot Microelectronics Corporation | Compositions and methods for selective polishing of silicon nitride materials |
US9803107B2 (en) | 2015-02-12 | 2017-10-31 | Asahi Glass Company, Limited | Polishing agent, polishing method and method for manufacturing semiconductor integrated circuit device |
WO2020117441A1 (en) * | 2018-12-04 | 2020-06-11 | Cabot Microelectronics Corporation | Composition and method for copper barrier cmp |
WO2020117438A1 (en) * | 2018-12-04 | 2020-06-11 | Cabot Microelectronics Corporation | Composition and method for cobalt cmp |
Also Published As
Publication number | Publication date |
---|---|
US8486169B2 (en) | 2013-07-16 |
TWI283022B (en) | 2007-06-21 |
KR101281967B1 (en) | 2013-07-03 |
US20040152309A1 (en) | 2004-08-05 |
KR20120006563A (en) | 2012-01-18 |
CN1742066A (en) | 2006-03-01 |
JP4927526B2 (en) | 2012-05-09 |
JP2006520530A (en) | 2006-09-07 |
TW200426932A (en) | 2004-12-01 |
US7071105B2 (en) | 2006-07-04 |
US20060144824A1 (en) | 2006-07-06 |
EP1601735A1 (en) | 2005-12-07 |
EP1601735B1 (en) | 2019-09-11 |
CN1742066B (en) | 2015-10-21 |
KR20050098288A (en) | 2005-10-11 |
US20090029633A1 (en) | 2009-01-29 |
US20060196848A1 (en) | 2006-09-07 |
US7442645B2 (en) | 2008-10-28 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US7442645B2 (en) | Method of polishing a silicon-containing dielectric | |
EP2331649B1 (en) | Methods and compositions for polishing silicon-containing substrates | |
JP5965906B2 (en) | Aqueous polishing composition and method for chemical mechanical polishing of a substrate comprising a silicon oxide dielectric film and a polysilicon film | |
US11674056B2 (en) | Polishing compositions containing charged abrasive | |
US20130171824A1 (en) | Process for chemically mechanically polishing substrates containing silicon oxide dielectric films and polysilicon and/or silicon nitride films | |
WO2015019911A1 (en) | Slurry for cmp |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
AK | Designated states |
Kind code of ref document: A1 Designated state(s): AE AG AL AM AT AU AZ BA BB BG BR BW BY BZ CA CH CN CO CR CU CZ DE DK DM DZ EC EE EG ES FI GB GD GE GH GM HR HU ID IL IN IS JP KE KG KP KR KZ LC LK LR LS LT LU LV MA MD MG MK MN MW MX MZ NA NI NO NZ OM PG PH PL PT RO RU SC SD SE SG SK SL SY TJ TM TN TR TT TZ UA UG US UZ VC VN YU ZA ZM ZW |
|
AL | Designated countries for regional patents |
Kind code of ref document: A1 Designated state(s): BW GH GM KE LS MW MZ SD SL SZ TZ UG ZM ZW AM AZ BY KG KZ MD RU TJ TM AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IT LU MC NL PT RO SE SI SK TR BF BJ CF CG CI CM GA GN GQ GW ML MR NE SN TD TG |
|
121 | Ep: the epo has been informed by wipo that ep was designated in this application | ||
WWE | Wipo information: entry into national phase |
Ref document number: 20048027634 Country of ref document: CN |
|
WWE | Wipo information: entry into national phase |
Ref document number: 10543848 Country of ref document: US |
|
WWE | Wipo information: entry into national phase |
Ref document number: 1020057014199 Country of ref document: KR |
|
WWE | Wipo information: entry into national phase |
Ref document number: 2006503246 Country of ref document: JP |
|
WWE | Wipo information: entry into national phase |
Ref document number: 2004707432 Country of ref document: EP |
|
WWP | Wipo information: published in national office |
Ref document number: 1020057014199 Country of ref document: KR |
|
WWP | Wipo information: published in national office |
Ref document number: 2004707432 Country of ref document: EP |
|
WWP | Wipo information: published in national office |
Ref document number: 10543848 Country of ref document: US |