WO2004068710A2 - Circuit arrangement for protecting a final power output element comprising semiconductor switches - Google Patents

Circuit arrangement for protecting a final power output element comprising semiconductor switches Download PDF

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Publication number
WO2004068710A2
WO2004068710A2 PCT/DE2003/004062 DE0304062W WO2004068710A2 WO 2004068710 A2 WO2004068710 A2 WO 2004068710A2 DE 0304062 W DE0304062 W DE 0304062W WO 2004068710 A2 WO2004068710 A2 WO 2004068710A2
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WO
WIPO (PCT)
Prior art keywords
semiconductor switches
circuit arrangement
control
limiting resistor
circuit
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PCT/DE2003/004062
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German (de)
French (fr)
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WO2004068710A3 (en
Inventor
Matthias Hadamik
Ingo Tempels
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Siemens Aktiengesellschaft
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Application filed by Siemens Aktiengesellschaft filed Critical Siemens Aktiengesellschaft
Publication of WO2004068710A2 publication Critical patent/WO2004068710A2/en
Publication of WO2004068710A3 publication Critical patent/WO2004068710A3/en

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Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
    • H03K17/082—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit
    • H03K17/0822—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit in field-effect transistor switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
    • H03K2017/0806—Modifications for protecting switching circuit against overcurrent or overvoltage against excessive temperature

Definitions

  • the invention relates to a circuit arrangement for protecting a power output stage with semiconductor switches, in particular in control units for motor vehicles.
  • Short circuit can be protected. This applies in particular if the output stage performs elementary functions in the electronic control of internal combustion engines or safety-related functions.
  • all different possibilities of an overload or a short circuit must be taken into account.
  • voltage measurements on the drain-source path of the semiconductor switches, which are usually designed as power MOS-FETs, and current measurements inside or outside the bridge circuits are either complex or lead to gaps in the protection.
  • the object of the invention is to reliably detect short circuits and overloads, the output stage only having to be designed for the actual load intended during operation. These errors should lead to a shutdown, but not to damage the power amplifier.
  • This object is achieved according to the invention in that the semiconductor switches are provided with temperature sensors which cooperate with a control circuit in such a way that when a predetermined temperature is exceeded, at least one of the semiconductor switches does not supply control pulses to the semiconductor switches and in one of the semiconductor switches is formed
  • Load circuit is arranged at least one current limiting resistor.
  • the advantage of the circuit arrangement according to the invention is complete protection of the power output stage. Another advantage is that the invention does not have to distinguish between overload (for example due to stiff DC motors), short circuit of the motor cable (against ground, battery voltage or with each other) or overtemperature (overheating of the control unit due to excessive ambient temperatures).
  • the current limitation measures limit the current through all possible current paths.
  • the temperature gradient in the semiconductor switch is also limited. With unlimited current, a critical transistor temperature can be reached in a power amplifier after just a few aes. Protection by a temperature measurement is then not possible by the microcomputer, since it reacts too slowly. However, the current gradient can limit the temperature gradient to such an extent that critical temperatures are only reached after, for example, 100 ms. This enables measurement by the microcomputer that is present in the control unit anyway.
  • the current limitation is preferably carried out by the fact that the voltage voltage drop at the at least one current limiting resistor for regulating the duty cycle of the control pulses in the sense of a current limitation with a higher voltage drop, wherein it can preferably also be provided that the control circuit contains a microcomputer to which the temperature sensors are connected via analog / digital converters, and the Has outputs for the control pulses.
  • An advantageous embodiment of the circuit arrangement according to the invention consists in that circuits for controlling the duty cycle of the control pulses are interposed between the outputs of the microcomputer and control inputs of the semiconductor switches, which circuits can be controlled as a function of the voltage drop at the at least one current limiting resistor.
  • the current in the resistors is measured and when a limit value is reached, the control of the output stage is switched off for a certain time. This results in a medium current together with the inductance of the motor. This ensures in particular that the current limitation sets in extremely quickly.
  • a complete protection of an output stage is possible in another advantageously designed circuit arrangement according to the invention in particular in that two semiconductor switches each form a branch of a bridge circuit, the connection points of the semiconductor switches each forming a branch representing an output, and the branches between the poles of a voltage source are arranged that a current limiting resistor connects both branches with one pole of the voltage source and that one current limiting resistor connects the branches with the other pole of the voltage source.
  • the invention permits numerous embodiments. One of these is shown schematically in the drawing using several figures and described below. It shows:
  • Fig. 1 partially in the form of a block diagram an embodiment of the circuit arrangement according to the invention
  • Fig. 2 is a diagram for explaining the temperature rise.
  • the circuit arrangement according to FIG. 1 comprises parts of a control device, as is used for example in motor vehicles.
  • a DC motor 1 is driven via a bridge output stage, which consists of field effect transistors 2, 3, 4, 5 and is connected between the positive pole 6 of an operating voltage source and ground potential.
  • a modulation circuit 8 and driver stages 9 supply 2 to 5 wide-modulated pulses to the gate electrodes of the field effect transistors, which pulses are generated in a microcomputer 7.
  • the field effect transistors 2 to 5 are each provided with a thermal sensor 11, 12, 13, 14, which are each formed by a diode.
  • the diodes are integrated in the field effect transistors, so that they immediately take on the temperatures of the field effect transistors.
  • the measured temperatures are reported to the microcomputer 7 via amplifiers 15 to 18 and analog / digital converters 19 to 22.
  • a current limiting resistor or current measuring resistor 23, 24 is inserted on the ground side, while a current limiting resistor on the operating voltage side Stand 25 is intended for both branches together.
  • the voltage drop across the current limiting resistors 23 to 25 is digitized with the aid of an analog / digital converter 26, 27, 28, respectively.
  • the output signals of the analog / digital converters 26 to 28 control a circuit 29 which reduces the pulse width of the control pulses generated by the microcomputer when at least one of the voltage drops exceeds a predetermined value. This limits the current through field effect transistors 2 to 5.

Abstract

Disclosed is a circuit arrangement for protecting a final power output element comprising semiconductor switches, especially in control devices for motor vehicles. The semiconductor switches (2-5) are provided with temperature sensors (11-14) which cooperate with a control circuit (7-9) such that control pulses stop being supplied to the semiconductor switches when a predefined temperature of at least one of the semiconductor switches (2-5) is exceeded. At least one current-limiting resistor (23-25) is arranged in a load circuit formed by the semiconductor switches.

Description

Beschreibungdescription
Schaltungsanordnung zum Schutz einer Leistungsendstufe mit HalbleiterschalternCircuit arrangement for protecting a power output stage with semiconductor switches
Die Erfindung betrifft eine Sehalt ngsanordnung zum Schutz einer Leistungsendstufe mit Halbleiterschaltern, insbesondere in Steuergeräten für Kraftfahrzeuge.The invention relates to a circuit arrangement for protecting a power output stage with semiconductor switches, in particular in control units for motor vehicles.
Leistungsendstufen müssen in der Regel gegen Überlast undPower amplifiers usually have to be protected against overload and
Kurzschluss abgesichert werden. Dies trifft insbesondere zu, wenn die Endstufe elementare Funktionen bei der elektronischen Steuerung von Brennkraftmaschinen oder sicherheitsrelevante Funktionen durchführt. Insbesondere bei Brückenschal- tungen sind dabei alle verschiedenen Möglichkeiten einer Ü- berlast bzw. eines Kurzschlusses zu berücksichtigen. Dies führt dazu, dass Spannungsmessungen an der Drain-Source- Strecke der meist als Leistungs-MOS-FETs ausgeführten Halbleiterschalter und Strommessungen innerhalb oder außerhalb der Brückenschaltungen entweder aufwendig sind oder zu Lücken in der Absicherung führen. Außerdem muss bei diesen Verfahren ein genügend großer Sicherheitsabstand zwischen Betriebsstrom und Abschaltstrom liegen, das heißt, die Endstufe muss überdimensioniert werden, was zu erheblichen Kosten bei den Halb- leiterschaltern führt.Short circuit can be protected. This applies in particular if the output stage performs elementary functions in the electronic control of internal combustion engines or safety-related functions. In the case of bridge circuits in particular, all different possibilities of an overload or a short circuit must be taken into account. This means that voltage measurements on the drain-source path of the semiconductor switches, which are usually designed as power MOS-FETs, and current measurements inside or outside the bridge circuits are either complex or lead to gaps in the protection. In addition, with these methods there must be a sufficiently large safety distance between the operating current and the shutdown current, that is to say the output stage must be oversized, which leads to considerable costs for the semiconductor switches.
Aufgabe der Erfindung ist es, Kurzschlüsse und Überlastungen sicher zu erkennen, wobei die Endstufe lediglich für die eigentliche im Betrieb vorgesehene Belastung ausgelegt zu wer- den braucht. Diese Fehlerfälle sollen zu einer Abschaltung, aber nicht zu einer Schädigung der Endstufe führen. Diese Aufgabe wird erfindungsgemäß dadurch gelöst, dass die Halbleiterschalter mit Temperatursensoren versehen sind, die mit einer Steuerschaltung derart zusammenwirken, dass bei Ü- berschreiten einer vorgegebenen Temperatur mindestens eines der Halbleiterschalter die Zuführung von Steuerimpulsen zu den Halbleiterschaltern unterbleibt und dass in einem von den Halbleiterschaltern gebildeten Lastkreis mindestens ein Strombegrenzungswiderstand angeordnet ist.The object of the invention is to reliably detect short circuits and overloads, the output stage only having to be designed for the actual load intended during operation. These errors should lead to a shutdown, but not to damage the power amplifier. This object is achieved according to the invention in that the semiconductor switches are provided with temperature sensors which cooperate with a control circuit in such a way that when a predetermined temperature is exceeded, at least one of the semiconductor switches does not supply control pulses to the semiconductor switches and in one of the semiconductor switches is formed Load circuit is arranged at least one current limiting resistor.
Vorteil der erfindungsgemäßen Schaltungsanordnung ist ein lückenloser Schutz der Leistungsendstufe. Ein weiterer Vorteil liegt darin, dass bei der Erfindung nicht zwischen Überlast (beispielsweise durch schwergängige Gleichstrommotore) , Kurz- schluss der Motorleitung (gegen Masse, Batteriespannung oder auch untereinander) oder Übertemperatur (Überhitzen des Steuergerätes durch zu hohe Umgebungstemperaturen) unterschieden werden muss .The advantage of the circuit arrangement according to the invention is complete protection of the power output stage. Another advantage is that the invention does not have to distinguish between overload (for example due to stiff DC motors), short circuit of the motor cable (against ground, battery voltage or with each other) or overtemperature (overheating of the control unit due to excessive ambient temperatures).
Durch die Maßnahmen zur Strombegrenzung wird der Strom durch alle möglichen Strompfade begrenzt. Zusätzlich wird dadurch erreicht, dass der Temperaturgradient im Halbleiterschalter ebenfalls begrenzt wird. Bei unbegrenztem Strom kann in einer Endstufe eine kritische Transistortemperatur bereits nach wenigen aes erreicht werden. Eine Absicherung durch eine Tempe- raturmessung ist dann durch den Mikrocomputer nicht möglich, da dieser zu langsam reagiert. Durch die Strombegrenzung kann jedoch der Temperaturgradient soweit begrenzt werden, dass kritische Temperaturen erst nach beispielsweise 100 ms erreicht werden. Dies ermöglicht eine Messung durch den im Steuergerät ohnehin vorhandenen Mikrocomputer.The current limitation measures limit the current through all possible current paths. In addition, the temperature gradient in the semiconductor switch is also limited. With unlimited current, a critical transistor temperature can be reached in a power amplifier after just a few aes. Protection by a temperature measurement is then not possible by the microcomputer, since it reacts too slowly. However, the current gradient can limit the temperature gradient to such an extent that critical temperatures are only reached after, for example, 100 ms. This enables measurement by the microcomputer that is present in the control unit anyway.
Die Strombegrenzung erfolgt bei der erfindungsgemäßen Schaltungsanordnung vorzugsweise dadurch, dass ferner der Span- nungsabfall an dem mindestens einen Strombegrenzungswiderstand zur Regelung des Tastverhältnisses der Steuerimpulse im Sinne einer Strombegrenzung bei höherem Spannungsabfall dient, wobei vorzugsweise ferner vorgesehen sein kann, dass die Steuerschaltung einen Mikrocomputer enthält, an den die Temperatursensoren über Analog/Digital-Wandler angeschlossen sind, und der Ausgänge für die Steuerimpulse aufweist.In the circuit arrangement according to the invention, the current limitation is preferably carried out by the fact that the voltage voltage drop at the at least one current limiting resistor for regulating the duty cycle of the control pulses in the sense of a current limitation with a higher voltage drop, wherein it can preferably also be provided that the control circuit contains a microcomputer to which the temperature sensors are connected via analog / digital converters, and the Has outputs for the control pulses.
Eine vorteilhafte Ausgestaltung der erfindungsgemäßen Schal- tungsanordnung besteht darin, dass zwischen die Ausgänge des Mikrocomputers und Steuereingänge der Halbleiterschalter Schaltungen zur Steuerung des Tastverhältnisses der Steuerimpulse zwischengeschaltet sind, die in Abhängigkeit vom Spannungsabfall an dem mindestens einen Strombegrenzungswider- stand steuerbar sind. Bei der Strombegrenzung an sich wird der Strom in den Widerständen gemessen und bei Erreichen eines Grenzwertes die Ansteuerung der Endstufe für eine gewisse Zeit abgeschaltet. Dadurch stellt sich zusammen mit der Induktivität des Motors ein mittlerer Strom ein. Hierbei wird insbesondere der Vorteil sichergestellt, dass die Strombegrenzung äußerst schnell einsetzt.An advantageous embodiment of the circuit arrangement according to the invention consists in that circuits for controlling the duty cycle of the control pulses are interposed between the outputs of the microcomputer and control inputs of the semiconductor switches, which circuits can be controlled as a function of the voltage drop at the at least one current limiting resistor. When the current is limited, the current in the resistors is measured and when a limit value is reached, the control of the output stage is switched off for a certain time. This results in a medium current together with the inductance of the motor. This ensures in particular that the current limitation sets in extremely quickly.
Eine vollständige Absicherung einer Endstufe ist bei einer anderen vorteilhaft ausgestalteten erfindungsgemäßen Schal- tungsanordnung insbesondere dadurch möglich, dass jeweils zwei Halbleiterschalter einen Zweig einer Brückenschaltung bilden, wobei die Verbindungspunkte der jeweils einen Zweig bildenden Halbleiterschalter einen Ausgang darstellen, und die Zweige zwischen den Polen einer Spannungsquelle angeord- net sind, dass ein Strombegrenzungswiderstand beide Zweige mit einem Pol der Spannungsquelle verbindet und dass je ein Strombegrenzungswiderstand die Zweige mit dem anderen Pol der Spannungsquelle verbindet . Die Erfindung lässt zahlreiche Ausführungsformen zu. Eine davon ist schematisch in der Zeichnung anhand mehrerer Figuren dargestellt und nachfolgend beschrieben. Es zeigt:A complete protection of an output stage is possible in another advantageously designed circuit arrangement according to the invention in particular in that two semiconductor switches each form a branch of a bridge circuit, the connection points of the semiconductor switches each forming a branch representing an output, and the branches between the poles of a voltage source are arranged that a current limiting resistor connects both branches with one pole of the voltage source and that one current limiting resistor connects the branches with the other pole of the voltage source. The invention permits numerous embodiments. One of these is shown schematically in the drawing using several figures and described below. It shows:
Fig. 1 teilweise in Form eines Blockschaltbildes ein Ausführungsbeispiel der erfindungsgemäßen Schaltungsanordnung undFig. 1 partially in the form of a block diagram an embodiment of the circuit arrangement according to the invention and
Fig. 2 ein Diagramm zur Erläuterung des Temperaturanstiegs.Fig. 2 is a diagram for explaining the temperature rise.
Die Schaltungsanordnung nach Fig. 1 umfasst Teile eines Steuergerätes, wie es beispielsweise in Kraftfahrzeugen verwendet wird. Dabei wird ein Gleichstrommotor 1 über eine Brückenendstufe, welche aus Feldeffekttransistoren 2, 3, 4, 5 besteht und zwischen den positiven Pol 6 einer Betriebsspannungsquelle und Massepotential geschaltet ist, angesteuert. In Abhängigkeit von der gewünschten Drehrichtung und dem gewünschten Drehmoment werden über eine Begrenzungsschaltung 8 und Treiberstufen 9 den Gate-Elektroden der Feldeffekttransistoren 2 bis 5 breitenmodulierte Impulse zugeführt, die in einem Mikrocomputer 7 erzeugt werden.The circuit arrangement according to FIG. 1 comprises parts of a control device, as is used for example in motor vehicles. A DC motor 1 is driven via a bridge output stage, which consists of field effect transistors 2, 3, 4, 5 and is connected between the positive pole 6 of an operating voltage source and ground potential. Depending on the desired direction of rotation and the desired torque, a modulation circuit 8 and driver stages 9 supply 2 to 5 wide-modulated pulses to the gate electrodes of the field effect transistors, which pulses are generated in a microcomputer 7.
Die Feldeffekttransistoren 2 bis 5 sind mit jeweils einem Thermosensor 11, 12, 13, 14 versehen, die von jeweils einer Diode gebildet sind. Die Dioden sind in die Feldeffekttransistoren integriert, so dass sie die Temperaturen der Feldeffekttransistoren unmittelbar annehmen. Über Verstärker 15 bis 18 und Analog/Digital-Wandler 19 bis 22 werden die gemessenen Temperaturen an den Mikrocomputer 7 gemeldet .The field effect transistors 2 to 5 are each provided with a thermal sensor 11, 12, 13, 14, which are each formed by a diode. The diodes are integrated in the field effect transistors, so that they immediately take on the temperatures of the field effect transistors. The measured temperatures are reported to the microcomputer 7 via amplifiers 15 to 18 and analog / digital converters 19 to 22.
In beiden Zweigen ist masseseitig jeweils ein Strombegrenzungswiderstand bzw. Strommesswiderstand 23, 24 eingefügt, während betriebsspannungsseitig ein Strombegrenzungswider- stand 25 für beide Zweige gemeinsam vorgesehen ist. Der Spannungsabfall an den Strombegrenzungswiderständen 23 bis 25 wird mit Hilfe jeweils eines Analog/Digital-Wandlers 26, 27, 28 digitalisiert. Die Ausgangssignale der Analog/Digital- Wandler 26 bis 28 steuern- eine Schaltung 29, welche die Pulsbreite der vom Mikrocomputer erzeugten Steuerimpulse vermindert, wenn mindestens einer der Spannungsabfälle einen vorgegebenen Wert überschreitet. Dadurch wird der Strom durch die Feldeffekttransistoren 2 bis 5 begrenzt.In both branches, a current limiting resistor or current measuring resistor 23, 24 is inserted on the ground side, while a current limiting resistor on the operating voltage side Stand 25 is intended for both branches together. The voltage drop across the current limiting resistors 23 to 25 is digitized with the aid of an analog / digital converter 26, 27, 28, respectively. The output signals of the analog / digital converters 26 to 28 control a circuit 29 which reduces the pulse width of the control pulses generated by the microcomputer when at least one of the voltage drops exceeds a predetermined value. This limits the current through field effect transistors 2 to 5.
Fig. 2 zeigt den Verlauf der Temperatur Tj eines Feldeffekttransistors als Funktion der Zeit, wobei angenommen wird, dass von einer normalen Betriebstemperatur T0 ausgehend eine Temperaturerhöhung durch einen Kurzschluss zum Zeitpunkt tO bzw. eine einsetzende Überlastung stattfindet. Der Anstieg der Temperatur wird, wie oben beschrieben, verlangsamt. Nach der Zeit tl ist jedoch die zulässige Temperatur Tl erreicht, was ein Abschalten der Endstufe bewirkt . 2 shows the course of the temperature Tj of a field effect transistor as a function of time, it being assumed that, starting from a normal operating temperature T0, there is an increase in temperature due to a short circuit at time t0 or an onset of overload. The rise in temperature is slowed down as described above. After the time tl, however, the permissible temperature Tl has been reached, which causes the output stage to be switched off.

Claims

Patentansprüche claims
1. Schaltungsanordnung zum Schutz einer Leistungsendstufe mit Halbleiterschaltern, insbesondere in Steuergeräten für Kraftfahrzeuge, dadurch gekennzeichnet, dass die1. Circuit arrangement for protecting a power output stage with semiconductor switches, in particular in control units for motor vehicles, characterized in that the
Halbleiterschalter (2, 3, 4, 5) mit Temperatursensoren (11, 12, 13, 14) versehen sind, die mit einer Steuerschaltung (7, 8, 9) derart zusammenwirken, dass bei Ü- berschreiten einer vorgegebenen Temperatur mindestens eines der Halbleiterschalter (2 bis 5) die Zuführung von Steuerimpulsen zu den Halbleiterschaltern (2 bis 5) unterbleibt und dass in einem von den Halbleiterschaltern (2 bis 5) gebildeten Lastkreis mindestens ein Strombegrenzungswiderstand (23, 24, 25) angeordnet ist.Semiconductor switches (2, 3, 4, 5) are provided with temperature sensors (11, 12, 13, 14) which cooperate with a control circuit (7, 8, 9) such that at least one of the semiconductor switches is exceeded when a predetermined temperature is exceeded (2 to 5) there is no supply of control pulses to the semiconductor switches (2 to 5) and that at least one current limiting resistor (23, 24, 25) is arranged in a load circuit formed by the semiconductor switches (2 to 5).
2. Schaltungsanordnung nach Anspruch 1, dadurch gekennzeichnet, dass ferner der Spannungsabfall an dem mindestens einen Strombegrenzungswiderstand (23, 24, 25) zur Regelung des Tastverhältnisses der Steuerimpulse im Sinne einer Strombegrenzung bei höherem Spannungsabfall dient .2. Circuit arrangement according to claim 1, characterized in that the voltage drop across the at least one current limiting resistor (23, 24, 25) serves to regulate the pulse duty factor of the control pulses in the sense of a current limitation with a higher voltage drop.
3. Schaltungsanordnung nach einem der vorhergehenden Ansprüche, dadurch gekennzeichnet, dass die Steuerschal- tung (7, 8, 9) einen Mikrocomputer (7) enthält, an den die Temperatursensoren (11 bis 14) über Analog/Digital- Wandler (19, 20, 21, 22) angeschlossen sind, und der Ausgänge für die Steuerimpulse auf eist .3. Circuit arrangement according to one of the preceding claims, characterized in that the control circuit (7, 8, 9) contains a microcomputer (7) to which the temperature sensors (11 to 14) via analog / digital converters (19, 20th , 21, 22) are connected, and the outputs for the control pulses on ice.
4. Schaltungsanordnung nach Anspruch 3, dadurch gekennzeichnet, dass zwischen die Ausgänge des Mikrocomputers (7) und Steuereingänge der Halbleiterschalter (2 bis 5) Schaltungen (8) zur Steuerung des Tastverhältnisses der Steuerimpulse zwischengeschaltet sind, die in Abhängigkeit vom Spannungsabfall an dem mindestens einen Strombegrenzungswiderstand (23, 24, 25) steuerbar sind.4. Circuit arrangement according to claim 3, characterized in that between the outputs of the microcomputer (7) and control inputs of the semiconductor switch (2 to 5) circuits (8) for controlling the duty cycle of the Control pulses are interposed, which can be controlled as a function of the voltage drop across the at least one current limiting resistor (23, 24, 25).
Schaltungsanordnung nach einem der vorhergehenden Ansprüche, dadurch gekennzeichnet, dass jeweils zwei Halbleiterschalter (2, 3; 4, 5) einen Zweig einer Brückenschaltung bilden, wobei die Verbindungspunkte der jeweils einen Zweig bildenden Halbleiterschalter (2, 3 ; 4, 5) einen Ausgang darstellen, und die Zweige zwischen den Polen einer Spannungsquelle angeordnet sind, dass ein Strombegrenzungswiderstand (25) beide Zweige mit einem Pol (6) der Spannungsquelle verbindet und dass je ein Strombegrenzungswiderstand (23, 24) die Zweige mit dem anderen Pol der Spannungsquelle verbindet. Circuit arrangement according to one of the preceding claims, characterized in that in each case two semiconductor switches (2, 3; 4, 5) form a branch of a bridge circuit, the connection points of the semiconductor switches (2, 3; 4, 5) each forming a branch representing an output , and the branches are arranged between the poles of a voltage source, that a current limiting resistor (25) connects both branches to one pole (6) of the voltage source and that one current limiting resistor (23, 24) connects the branches to the other pole of the voltage source.
PCT/DE2003/004062 2003-01-24 2003-12-10 Circuit arrangement for protecting a final power output element comprising semiconductor switches WO2004068710A2 (en)

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