WO2004060548A8 - High pressure apparatus for crystal growth - Google Patents

High pressure apparatus for crystal growth

Info

Publication number
WO2004060548A8
WO2004060548A8 PCT/US2003/038687 US0338687W WO2004060548A8 WO 2004060548 A8 WO2004060548 A8 WO 2004060548A8 US 0338687 W US0338687 W US 0338687W WO 2004060548 A8 WO2004060548 A8 WO 2004060548A8
Authority
WO
WIPO (PCT)
Prior art keywords
high pressure
crystal growth
pressure apparatus
reaction cell
temperature
Prior art date
Application number
PCT/US2003/038687
Other languages
French (fr)
Other versions
WO2004060548A3 (en
WO2004060548A2 (en
Inventor
Evelyn Mark Philip D
Robert Vincent Leonelli Jr
Peter Sam Allison
Kristi Jean Narang
Robert Arthur Giddings
Original Assignee
Gen Electric
Evelyn Mark Philip D
Robert Vincent Leonelli Jr
Peter Sam Allison
Kristi Jean Narang
Robert Arthur Giddings
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Gen Electric, Evelyn Mark Philip D, Robert Vincent Leonelli Jr, Peter Sam Allison, Kristi Jean Narang, Robert Arthur Giddings filed Critical Gen Electric
Priority to AU2003298923A priority Critical patent/AU2003298923A1/en
Priority to EP03796685A priority patent/EP1575697A2/en
Priority to JP2004565216A priority patent/JP2006511341A/en
Publication of WO2004060548A2 publication Critical patent/WO2004060548A2/en
Publication of WO2004060548A3 publication Critical patent/WO2004060548A3/en
Publication of WO2004060548A8 publication Critical patent/WO2004060548A8/en

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J3/00—Processes of utilising sub-atmospheric or super-atmospheric pressure to effect chemical or physical change of matter; Apparatus therefor
    • B01J3/06—Processes using ultra-high pressure, e.g. for the formation of diamonds; Apparatus therefor, e.g. moulds or dies
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J3/00—Processes of utilising sub-atmospheric or super-atmospheric pressure to effect chemical or physical change of matter; Apparatus therefor
    • B01J3/06—Processes using ultra-high pressure, e.g. for the formation of diamonds; Apparatus therefor, e.g. moulds or dies
    • B01J3/065—Presses for the formation of diamonds or boronitrides
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J3/00—Processes of utilising sub-atmospheric or super-atmospheric pressure to effect chemical or physical change of matter; Apparatus therefor
    • B01J3/06—Processes using ultra-high pressure, e.g. for the formation of diamonds; Apparatus therefor, e.g. moulds or dies
    • B01J3/062—Processes using ultra-high pressure, e.g. for the formation of diamonds; Apparatus therefor, e.g. moulds or dies characterised by the composition of the materials to be processed
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B30—PRESSES
    • B30B—PRESSES IN GENERAL
    • B30B15/00—Details of, or accessories for, presses; Auxiliary measures in connection with pressing
    • B30B15/34—Heating or cooling presses or parts thereof
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J2203/00—Processes utilising sub- or super atmospheric pressure
    • B01J2203/06—High pressure synthesis
    • B01J2203/065—Composition of the material produced
    • B01J2203/0655—Diamond
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J2203/00—Processes utilising sub- or super atmospheric pressure
    • B01J2203/06—High pressure synthesis
    • B01J2203/065—Composition of the material produced
    • B01J2203/0665—Gallium nitrides
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1004—Apparatus with means for measuring, testing, or sensing

Abstract

A high temperature/high pressure (HP/HT) apparatus for converting feedstock housed in a capsule into product crystals, comprising at least two electrical heating paths for independent control of both the mean temperature in the reaction cell and the temperature gradient across the reaction cell.
PCT/US2003/038687 2002-12-18 2003-12-05 High pressure apparatus for crystal growth WO2004060548A2 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
AU2003298923A AU2003298923A1 (en) 2002-12-18 2003-12-05 High pressure apparatus for crystal growth
EP03796685A EP1575697A2 (en) 2002-12-18 2003-12-05 High pressure apparatus for crystal growth
JP2004565216A JP2006511341A (en) 2002-12-18 2003-12-05 High pressure high temperature equipment with improved temperature control for crystal growth.

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US43518902P 2002-12-18 2002-12-18
US60/435,189 2002-12-18
US10/699,504 2003-10-31
US10/699,504 US7101433B2 (en) 2002-12-18 2003-10-31 High pressure/high temperature apparatus with improved temperature control for crystal growth

Publications (3)

Publication Number Publication Date
WO2004060548A2 WO2004060548A2 (en) 2004-07-22
WO2004060548A3 WO2004060548A3 (en) 2004-08-26
WO2004060548A8 true WO2004060548A8 (en) 2005-11-03

Family

ID=32717797

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2003/038687 WO2004060548A2 (en) 2002-12-18 2003-12-05 High pressure apparatus for crystal growth

Country Status (7)

Country Link
US (1) US7101433B2 (en)
EP (1) EP1575697A2 (en)
JP (1) JP2006511341A (en)
KR (1) KR20050085713A (en)
AU (1) AU2003298923A1 (en)
PL (1) PL375924A1 (en)
WO (1) WO2004060548A2 (en)

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US7063741B2 (en) * 2002-03-27 2006-06-20 General Electric Company High pressure high temperature growth of crystalline group III metal nitrides
EP3211659A1 (en) * 2002-12-27 2017-08-30 Soraa Inc. Gallium nitride crystal
US9279193B2 (en) * 2002-12-27 2016-03-08 Momentive Performance Materials Inc. Method of making a gallium nitride crystalline composition having a low dislocation density
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JP4276627B2 (en) * 2005-01-12 2009-06-10 ソルボサーマル結晶成長技術研究組合 Pressure vessel for single crystal growth and method for producing the same
US7704324B2 (en) * 2005-01-25 2010-04-27 General Electric Company Apparatus for processing materials in supercritical fluids and methods thereof
ES2258919B2 (en) * 2005-02-21 2007-04-01 Instituto De Monocristales, S.L. CAPSULE AND ELEMENTS FOR THE PRODUCTION OF DIAMOND SYNTHESIS.
JP2006231277A (en) * 2005-02-28 2006-09-07 Okayama Univ Single crystal synthesizing method and device
US7316746B2 (en) * 2005-03-18 2008-01-08 General Electric Company Crystals for a semiconductor radiation detector and method for making the crystals
US7887631B2 (en) * 2005-06-24 2011-02-15 The Gemesis Corporation System and high pressure, high temperature apparatus for producing synthetic diamonds
US20060292302A1 (en) * 2005-06-24 2006-12-28 Robert Chodelka Apparatus and method for growing a synthetic diamond
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US7942970B2 (en) 2005-12-20 2011-05-17 Momentive Performance Materials Inc. Apparatus for making crystalline composition
CN101528634B (en) * 2006-10-31 2013-06-12 三菱综合材料株式会社 Diamond sinter with satisfactory electrical conductivity and process for producing the same
US8458262B2 (en) * 2006-12-22 2013-06-04 At&T Mobility Ii Llc Filtering spam messages across a communication network
US9157167B1 (en) 2008-06-05 2015-10-13 Soraa, Inc. High pressure apparatus and method for nitride crystal growth
US8871024B2 (en) 2008-06-05 2014-10-28 Soraa, Inc. High pressure apparatus and method for nitride crystal growth
US8097081B2 (en) * 2008-06-05 2012-01-17 Soraa, Inc. High pressure apparatus and method for nitride crystal growth
WO2009149254A1 (en) * 2008-06-05 2009-12-10 Soraa, Inc. High pressure apparatus and method for nitride crystal growth
US8303710B2 (en) * 2008-06-18 2012-11-06 Soraa, Inc. High pressure apparatus and method for nitride crystal growth
US8284810B1 (en) 2008-08-04 2012-10-09 Soraa, Inc. Solid state laser device using a selected crystal orientation in non-polar or semi-polar GaN containing materials and methods
US8124996B2 (en) * 2008-08-04 2012-02-28 Soraa, Inc. White light devices using non-polar or semipolar gallium containing materials and phosphors
US8430958B2 (en) 2008-08-07 2013-04-30 Soraa, Inc. Apparatus and method for seed crystal utilization in large-scale manufacturing of gallium nitride
US8979999B2 (en) 2008-08-07 2015-03-17 Soraa, Inc. Process for large-scale ammonothermal manufacturing of gallium nitride boules
US8323405B2 (en) 2008-08-07 2012-12-04 Soraa, Inc. Process and apparatus for growing a crystalline gallium-containing nitride using an azide mineralizer
US10036099B2 (en) 2008-08-07 2018-07-31 Slt Technologies, Inc. Process for large-scale ammonothermal manufacturing of gallium nitride boules
US8021481B2 (en) 2008-08-07 2011-09-20 Soraa, Inc. Process and apparatus for large-scale manufacturing of bulk monocrystalline gallium-containing nitride
US8148801B2 (en) 2008-08-25 2012-04-03 Soraa, Inc. Nitride crystal with removable surface layer and methods of manufacture
US8354679B1 (en) 2008-10-02 2013-01-15 Soraa, Inc. Microcavity light emitting diode method of manufacture
US8455894B1 (en) 2008-10-17 2013-06-04 Soraa, Inc. Photonic-crystal light emitting diode and method of manufacture
US8987156B2 (en) 2008-12-12 2015-03-24 Soraa, Inc. Polycrystalline group III metal nitride with getter and method of making
USRE47114E1 (en) 2008-12-12 2018-11-06 Slt Technologies, Inc. Polycrystalline group III metal nitride with getter and method of making
US8878230B2 (en) 2010-03-11 2014-11-04 Soraa, Inc. Semi-insulating group III metal nitride and method of manufacture
US8461071B2 (en) 2008-12-12 2013-06-11 Soraa, Inc. Polycrystalline group III metal nitride with getter and method of making
US9543392B1 (en) 2008-12-12 2017-01-10 Soraa, Inc. Transparent group III metal nitride and method of manufacture
WO2010084682A1 (en) * 2009-01-23 2010-07-29 日本碍子株式会社 Group 3b nitride crystal
US8299473B1 (en) 2009-04-07 2012-10-30 Soraa, Inc. Polarized white light devices using non-polar or semipolar gallium containing materials and transparent phosphors
US8306081B1 (en) 2009-05-27 2012-11-06 Soraa, Inc. High indium containing InGaN substrates for long wavelength optical devices
US8435347B2 (en) 2009-09-29 2013-05-07 Soraa, Inc. High pressure apparatus with stackable rings
US9175418B2 (en) 2009-10-09 2015-11-03 Soraa, Inc. Method for synthesis of high quality large area bulk gallium based crystals
US9564320B2 (en) 2010-06-18 2017-02-07 Soraa, Inc. Large area nitride crystal and method for making it
WO2012019112A2 (en) * 2010-08-05 2012-02-09 University Of Houston System Method of producing diamond powder and doped diamonds
US8021639B1 (en) 2010-09-17 2011-09-20 Diamond Materials Inc. Method for rapidly synthesizing monolithic polycrystalline diamond articles
US8729559B2 (en) 2010-10-13 2014-05-20 Soraa, Inc. Method of making bulk InGaN substrates and devices thereon
US8786053B2 (en) 2011-01-24 2014-07-22 Soraa, Inc. Gallium-nitride-on-handle substrate materials and devices and method of manufacture
US9238875B2 (en) 2011-02-01 2016-01-19 Sunset Peak International Limited Multilayer structure for a diamond growth and a method of providing the same
US20120312227A1 (en) * 2011-06-10 2012-12-13 Gemesis Diamond Company Multi-heater system for growing high quality diamond and a method for growing the same
US9149777B2 (en) * 2011-10-10 2015-10-06 Baker Hughes Incorporated Combined field assisted sintering techniques and HTHP sintering techniques for forming polycrystalline diamond compacts and earth-boring tools
US20130160700A1 (en) * 2011-12-21 2013-06-27 Gemesis Diamond Company Step heating process for growing high quality diamond
US8482104B2 (en) 2012-01-09 2013-07-09 Soraa, Inc. Method for growth of indium-containing nitride films
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Also Published As

Publication number Publication date
AU2003298923A1 (en) 2004-07-29
WO2004060548A3 (en) 2004-08-26
JP2006511341A (en) 2006-04-06
WO2004060548A2 (en) 2004-07-22
KR20050085713A (en) 2005-08-29
US7101433B2 (en) 2006-09-05
EP1575697A2 (en) 2005-09-21
US20040134415A1 (en) 2004-07-15
AU2003298923A8 (en) 2004-07-29
PL375924A1 (en) 2005-12-12

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Free format text: IN PCT GAZETTE 30/2004 UNDER (71) REPLACE "GENERAL ELECTRIC COMPANY (A NEW YORK CORPORATION) [US/US]; 1 RIVER ROAD, SCHENECTADY, NY 12345 (US)." BY "GENERAL ELECTRIC COMPANY [US/US]; 1 RIVER ROAD, SCHENECTADY, NY 12345 (US)."