WO2004059832A3 - Bias-management system and method for programmable rf power amplifier - Google Patents

Bias-management system and method for programmable rf power amplifier Download PDF

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Publication number
WO2004059832A3
WO2004059832A3 PCT/US2003/041637 US0341637W WO2004059832A3 WO 2004059832 A3 WO2004059832 A3 WO 2004059832A3 US 0341637 W US0341637 W US 0341637W WO 2004059832 A3 WO2004059832 A3 WO 2004059832A3
Authority
WO
WIPO (PCT)
Prior art keywords
current
power amplifier
bias
controller
iref
Prior art date
Application number
PCT/US2003/041637
Other languages
French (fr)
Other versions
WO2004059832A2 (en
Inventor
David J Hedberg
James B Turner
Original Assignee
Globespan Virata Inc
David J Hedberg
James B Turner
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Globespan Virata Inc, David J Hedberg, James B Turner filed Critical Globespan Virata Inc
Priority to AU2003303446A priority Critical patent/AU2003303446A1/en
Publication of WO2004059832A2 publication Critical patent/WO2004059832A2/en
Publication of WO2004059832A3 publication Critical patent/WO2004059832A3/en

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/02—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation
    • H03F1/0205—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers
    • H03F1/0261—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers with control of the polarisation voltage or current, e.g. gliding Class A
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/02—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation
    • H03F1/0205—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers
    • H03F1/0211—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers with control of the supply voltage or current
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/30—Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/32—Modifications of amplifiers to reduce non-linear distortion
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/102—A non-specified detector of a signal envelope being used in an amplifying circuit
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/108—A coil being added in the drain circuit of a FET amplifier stage, e.g. for noise reducing purposes
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/181—A coil being added in the gate circuit of a FET amplifier stage, e.g. for noise reducing purposes
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/318—A matching circuit being used as coupling element between two amplifying stages
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/411—Indexing scheme relating to amplifiers the output amplifying stage of an amplifier comprising two power stages

Abstract

A system (100) and method (200) for adaptively managing bias of an RF power amplifier (102) is provided. The system (100) incorporates a controller (116) configured to select a radio operating mode. A current-mirror circuit (114) is coupled to the controller (116) and configured to produce a reference current (IRef) as a function of the radio operating mode. A bias regulator (104) is coupled to the controller (116) and the current-mirror circuit (114) and configured to produce a driver-stage bias current (Ib1) and an output-stage bias current (Ib2) for the power amplifier (102) in response to the reference current (IRef). The system (100) also incorporates a DC-to-DC converter (118) coupled to the controller (116) and configured to provide a supply voltage (Vcc) for the power amplifier (102) in response to the radio operating mode. The system (100) also incorporates an envelope detector (120) configured to produce an envelope current (IEnv) in response to an RF input signal (126). The system (100) causes the reference current (IRef) to vary as a function of the envelope current (IEnv).
PCT/US2003/041637 2002-12-23 2003-12-22 Bias-management system and method for programmable rf power amplifier WO2004059832A2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
AU2003303446A AU2003303446A1 (en) 2002-12-23 2003-12-22 Bias-management system and method for programmable rf power amplifier

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US43615702P 2002-12-23 2002-12-23
US60/436,157 2002-12-23
US10/650,337 2003-08-27
US10/650,337 US6831517B1 (en) 2002-12-23 2003-08-27 Bias-management system and method for programmable RF power amplifier

Publications (2)

Publication Number Publication Date
WO2004059832A2 WO2004059832A2 (en) 2004-07-15
WO2004059832A3 true WO2004059832A3 (en) 2005-03-31

Family

ID=33492970

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2003/041637 WO2004059832A2 (en) 2002-12-23 2003-12-22 Bias-management system and method for programmable rf power amplifier

Country Status (3)

Country Link
US (1) US6831517B1 (en)
AU (1) AU2003303446A1 (en)
WO (1) WO2004059832A2 (en)

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US7288992B2 (en) * 2002-03-20 2007-10-30 Roke Manor Research Limited Bias circuit for a bipolar transistor
DE60224922D1 (en) * 2002-05-31 2008-03-20 Ericsson Telefon Ab L M power amplifier
KR100473811B1 (en) * 2003-02-21 2005-03-10 학교법인 포항공과대학교 LINC power transmitter
US7944306B2 (en) 2004-10-08 2011-05-17 Nxp B.V. Dual bias control circuit
US7454179B1 (en) 2005-11-15 2008-11-18 Rf Micro Devices, Inc. Radio frequency power detector and decision circuit used with DC supply voltage controlled power amplifiers
US8884714B2 (en) * 2005-12-22 2014-11-11 Pine Valley Investments, Inc. Apparatus, system, and method for digital base modulation of power amplifier in polar transmitter
WO2007104341A1 (en) * 2006-03-15 2007-09-20 Freescale Semiconductor, Inc. Method and apparatus for enhanced data rate adaptation and lower power controlin a wlan semiconductor chip
US7570931B2 (en) 2006-06-02 2009-08-04 Crestcom, Inc. RF transmitter with variably biased RF power amplifier and method therefor
WO2008020368A2 (en) * 2006-08-15 2008-02-21 Koninklijke Philips Electronics N.V. Rf transmitter with controlable rf power amplifier
US7729670B2 (en) * 2006-09-29 2010-06-01 Broadcom Corporation Method and system for minimizing power consumption in a communication system
US7492223B2 (en) * 2006-12-06 2009-02-17 Broadcom Corporation Method and system for a highly efficient power amplifier utilizing dynamic biasing and predistortion
US7439806B2 (en) * 2007-02-27 2008-10-21 Avago Technologies General Ip (Singapore) Pte. Ltd. Bias control circuit and method of controlling bias of RF power amplifier
US8014735B2 (en) * 2007-11-06 2011-09-06 Quantance, Inc. RF power amplifier controlled by estimated distortion level of output signal of power amplifier
US8064851B2 (en) * 2008-03-06 2011-11-22 Crestcom, Inc. RF transmitter with bias-signal-induced distortion compensation and method therefor
US8618876B2 (en) * 2008-05-30 2013-12-31 Qualcomm Incorporated Reduced power-consumption transmitters
US9088260B2 (en) * 2008-12-03 2015-07-21 Freescale Semiconductor, Inc. Operating parameter control for a power amplifier
US8688061B2 (en) * 2010-08-09 2014-04-01 Skyworks Solutions, Inc. System and method for biasing a power amplifier
US8587377B2 (en) * 2010-12-13 2013-11-19 Skyworks Solutions, Inc. Apparatus and methods for biasing a power amplifier
DE102011014843B4 (en) 2011-03-23 2016-10-13 Austriamicrosystems Ag Amplifier arrangement and method for operating an amplifier arrangement
JP2012244251A (en) * 2011-05-16 2012-12-10 Fujitsu Ltd Amplifier, transmission device and amplifier control method
US9559646B2 (en) 2014-09-10 2017-01-31 Samsung Electronics Co., Ltd Apparatus and method for dynamically biased baseband current amplifier
US9960740B2 (en) 2015-06-18 2018-05-01 Raytheon Company Bias circuitry for depletion mode amplifiers
US20170141734A1 (en) * 2015-11-16 2017-05-18 Skyworks Solutions, Inc. Circuits and methods for controlling power amplifiers
TWI623193B (en) * 2015-12-04 2018-05-01 財團法人工業技術研究院 Power amplifier circuit
CN106849879B (en) 2015-12-04 2020-08-04 财团法人工业技术研究院 Power amplifier circuit
US10447208B2 (en) 2017-12-15 2019-10-15 Raytheon Company Amplifier having a switchable current bias circuit
EP3750239B1 (en) * 2018-02-05 2022-05-04 Telefonaktiebolaget Lm Ericsson (Publ) H-bridge power amplifier arrangement
JP2020053927A (en) * 2018-09-28 2020-04-02 株式会社村田製作所 Power amplifier

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5241283A (en) * 1992-07-30 1993-08-31 Echelon Corporation Drive amplifier for power line communications
US6492874B1 (en) * 2001-07-30 2002-12-10 Motorola, Inc. Active bias circuit
US6714081B1 (en) * 2002-09-11 2004-03-30 Motorola, Inc. Active current bias network for compensating hot-carrier injection induced bias drift

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0563125A4 (en) 1990-12-17 1997-02-26 Motorola Inc Dynamically biased amplifier
US5311143A (en) 1992-07-02 1994-05-10 Motorola, Inc. RF amplifier bias control method and apparatus
US5268649A (en) 1992-08-03 1993-12-07 Texas Instruments Incorporated Bias circuit for bipolar transistors
US6559722B1 (en) 1999-08-10 2003-05-06 Anadigics, Inc. Low bias current/temperature compensation current mirror for linear power amplifier
US6535066B1 (en) 2001-06-21 2003-03-18 Cisco Technology, Inc. Dynamic RF amplifier bias control for digital wireless communications devices
US6414553B1 (en) 2001-08-30 2002-07-02 Koninklijke Philips Electronics N.V. Power amplifier having a cascode current-mirror self-bias boosting circuit

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5241283A (en) * 1992-07-30 1993-08-31 Echelon Corporation Drive amplifier for power line communications
US6492874B1 (en) * 2001-07-30 2002-12-10 Motorola, Inc. Active bias circuit
US6714081B1 (en) * 2002-09-11 2004-03-30 Motorola, Inc. Active current bias network for compensating hot-carrier injection induced bias drift

Also Published As

Publication number Publication date
US6831517B1 (en) 2004-12-14
AU2003303446A1 (en) 2004-07-22
AU2003303446A8 (en) 2004-07-22
WO2004059832A2 (en) 2004-07-15

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