WO2004059697B1 - Adaptive negative differential resistance device - Google Patents
Adaptive negative differential resistance deviceInfo
- Publication number
- WO2004059697B1 WO2004059697B1 PCT/US2003/040268 US0340268W WO2004059697B1 WO 2004059697 B1 WO2004059697 B1 WO 2004059697B1 US 0340268 W US0340268 W US 0340268W WO 2004059697 B1 WO2004059697 B1 WO 2004059697B1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- ndr
- channel
- adaptive
- current
- silicon
- Prior art date
Links
- 230000003044 adaptive effect Effects 0.000 title claims abstract 35
- 238000000034 method Methods 0.000 claims abstract 46
- 229910052710 silicon Inorganic materials 0.000 claims abstract 39
- 239000010703 silicon Substances 0.000 claims abstract 39
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract 38
- 239000004065 semiconductor Substances 0.000 claims abstract 21
- 239000012535 impurity Substances 0.000 claims 24
- 239000002800 charge carrier Substances 0.000 claims 7
- 239000012212 insulator Substances 0.000 claims 7
- 238000000137 annealing Methods 0.000 claims 6
- 239000000758 substrate Substances 0.000 claims 6
- 239000007943 implant Substances 0.000 claims 3
- 238000005513 bias potential Methods 0.000 claims 2
- 239000012141 concentrate Substances 0.000 claims 2
- 238000004519 manufacturing process Methods 0.000 claims 2
- 230000004044 response Effects 0.000 claims 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims 1
- 229910052785 arsenic Inorganic materials 0.000 claims 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 claims 1
- 229910052796 boron Inorganic materials 0.000 claims 1
- 239000000969 carrier Substances 0.000 claims 1
- 230000008878 coupling Effects 0.000 claims 1
- 238000010168 coupling process Methods 0.000 claims 1
- 238000005859 coupling reaction Methods 0.000 claims 1
- 230000007423 decrease Effects 0.000 claims 1
- 230000007547 defect Effects 0.000 claims 1
- 230000008021 deposition Effects 0.000 claims 1
- 238000009826 distribution Methods 0.000 claims 1
- 230000005684 electric field Effects 0.000 claims 1
- 230000005669 field effect Effects 0.000 claims 1
- 230000006870 function Effects 0.000 claims 1
- 238000010438 heat treatment Methods 0.000 claims 1
- 238000002513 implantation Methods 0.000 claims 1
- 238000007254 oxidation reaction Methods 0.000 claims 1
- 238000003860 storage Methods 0.000 claims 1
Classifications
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/39—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using thyristors or the avalanche or negative resistance type, e.g. PNPN, SCR, SCS, UJT
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
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Abstract
Claims
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
AU2003303431A AU2003303431A1 (en) | 2002-12-17 | 2003-12-17 | Adaptive negative differential resistance device |
JP2004563703A JP2006511941A (en) | 2002-12-17 | 2003-12-17 | Adaptive negative differential resistance device |
EP03814122A EP1584107A4 (en) | 2002-12-17 | 2003-12-17 | Adaptive negative differential resistance device |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/321,090 US6812084B2 (en) | 2002-12-09 | 2002-12-17 | Adaptive negative differential resistance device |
US10/321,090 | 2002-12-17 |
Publications (3)
Publication Number | Publication Date |
---|---|
WO2004059697A2 WO2004059697A2 (en) | 2004-07-15 |
WO2004059697A3 WO2004059697A3 (en) | 2005-04-14 |
WO2004059697B1 true WO2004059697B1 (en) | 2005-06-09 |
Family
ID=32680705
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US2003/040268 WO2004059697A2 (en) | 2002-12-17 | 2003-12-17 | Adaptive negative differential resistance device |
Country Status (7)
Country | Link |
---|---|
US (2) | US6812084B2 (en) |
EP (1) | EP1584107A4 (en) |
JP (1) | JP2006511941A (en) |
KR (1) | KR20050084252A (en) |
CN (1) | CN1745472A (en) |
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-
2002
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KR20050084252A (en) | 2005-08-26 |
AU2003303431A8 (en) | 2004-07-22 |
EP1584107A2 (en) | 2005-10-12 |
AU2003303431A1 (en) | 2004-07-22 |
CN1745472A (en) | 2006-03-08 |
EP1584107A4 (en) | 2006-07-26 |
JP2006511941A (en) | 2006-04-06 |
US7254050B2 (en) | 2007-08-07 |
US20050064645A1 (en) | 2005-03-24 |
US6812084B2 (en) | 2004-11-02 |
WO2004059697A3 (en) | 2005-04-14 |
US20040110337A1 (en) | 2004-06-10 |
WO2004059697A2 (en) | 2004-07-15 |
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