WO2004059697A3 - Adaptive negative differential resistance device - Google Patents

Adaptive negative differential resistance device Download PDF

Info

Publication number
WO2004059697A3
WO2004059697A3 PCT/US2003/040268 US0340268W WO2004059697A3 WO 2004059697 A3 WO2004059697 A3 WO 2004059697A3 US 0340268 W US0340268 W US 0340268W WO 2004059697 A3 WO2004059697 A3 WO 2004059697A3
Authority
WO
WIPO (PCT)
Prior art keywords
ndr
negative differential
differential resistance
resistance device
adaptive
Prior art date
Application number
PCT/US2003/040268
Other languages
French (fr)
Other versions
WO2004059697B1 (en
WO2004059697A2 (en
Inventor
Tsu-Jae King
Original Assignee
Progressant Technologies Inc
Tsu-Jae King
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Progressant Technologies Inc, Tsu-Jae King filed Critical Progressant Technologies Inc
Priority to EP03814122A priority Critical patent/EP1584107A4/en
Priority to AU2003303431A priority patent/AU2003303431A1/en
Priority to JP2004563703A priority patent/JP2006511941A/en
Publication of WO2004059697A2 publication Critical patent/WO2004059697A2/en
Publication of WO2004059697A3 publication Critical patent/WO2004059697A3/en
Publication of WO2004059697B1 publication Critical patent/WO2004059697B1/en

Links

Classifications

    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C11/00Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/39Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using thyristors or the avalanche or negative resistance type, e.g. PNPN, SCR, SCS, UJT
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26Bombardment with radiation
    • H01L21/263Bombardment with radiation with high-energy radiation
    • H01L21/265Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/26506Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
    • H01L21/26513Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors of electrically active species
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26Bombardment with radiation
    • H01L21/263Bombardment with radiation with high-energy radiation
    • H01L21/265Bombardment with radiation with high-energy radiation producing ion implantation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26Bombardment with radiation
    • H01L21/263Bombardment with radiation with high-energy radiation
    • H01L21/265Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/26506Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
    • H01L21/26513Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors of electrically active species
    • H01L21/2652Through-implantation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/28008Making conductor-insulator-semiconductor electrodes
    • H01L21/28017Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H01L21/28158Making the insulator
    • H01L21/28167Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation
    • H01L21/28176Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation with a treatment, e.g. annealing, after the formation of the definitive gate conductor
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/28008Making conductor-insulator-semiconductor electrodes
    • H01L21/28017Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H01L21/28158Making the insulator
    • H01L21/28167Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation
    • H01L21/28185Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation with a treatment, e.g. annealing, after the formation of the gate insulator and before the formation of the definitive gate conductor
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/28008Making conductor-insulator-semiconductor electrodes
    • H01L21/28017Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H01L21/28158Making the insulator
    • H01L21/28167Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation
    • H01L21/28194Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation by deposition, e.g. evaporation, ALD, CVD, sputtering, laser deposition
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8232Field-effect technology
    • H01L21/8234MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
    • H01L21/823412MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type with a particular manufacturing method of the channel structures, e.g. channel implants, halo or pocket implants, or channel materials
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8232Field-effect technology
    • H01L21/8234MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
    • H01L21/823462MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type with a particular manufacturing method of the gate insulating layers, e.g. different gate insulating layer thicknesses, particular gate insulator materials or particular gate insulator implants
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8232Field-effect technology
    • H01L21/8234MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
    • H01L21/8238Complementary field-effect transistors, e.g. CMOS
    • H01L21/823857Complementary field-effect transistors, e.g. CMOS with a particular manufacturing method of the gate insulating layers, e.g. different gate insulating layer thicknesses, particular gate insulator materials or particular gate insulator implants
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/08Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/10Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
    • H01L27/105Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including field-effect components
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40Electrodes ; Multistep manufacturing processes therefor
    • H01L29/401Multistep manufacturing processes
    • H01L29/4011Multistep manufacturing processes for data storage electrodes
    • H01L29/40117Multistep manufacturing processes for data storage electrodes the electrodes comprising a charge-trapping insulator
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312Gate electrodes for field effect devices
    • H01L29/42316Gate electrodes for field effect devices for field-effect transistors
    • H01L29/4232Gate electrodes for field effect devices for field-effect transistors with insulated gate
    • H01L29/42324Gate electrodes for transistors with a floating gate
    • H01L29/42332Gate electrodes for transistors with a floating gate with the floating gate formed by two or more non connected parts, e.g. multi-particles flating gate
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/49Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
    • H01L29/51Insulating materials associated therewith
    • H01L29/511Insulating materials associated therewith with a compositional variation, e.g. multilayer structures
    • H01L29/513Insulating materials associated therewith with a compositional variation, e.g. multilayer structures the variation being perpendicular to the channel plane
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/49Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
    • H01L29/51Insulating materials associated therewith
    • H01L29/518Insulating materials associated therewith the insulating material containing nitrogen, e.g. nitride, oxynitride, nitrogen-doped material
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007Multistep manufacturing processes
    • H01L29/66075Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409Unipolar field-effect transistors
    • H01L29/66477Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66833Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a charge trapping gate insulator, e.g. MNOS transistors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76Unipolar devices, e.g. field effect transistors
    • H01L29/772Field effect transistors
    • H01L29/78Field effect transistors with field effect produced by an insulated gate
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10BELECTRONIC MEMORY DEVICES
    • H10B43/00EEPROM devices comprising charge-trapping gate insulators
    • H10B43/30EEPROM devices comprising charge-trapping gate insulators characterised by the memory core region
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/49Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
    • H01L29/51Insulating materials associated therewith
    • H01L29/517Insulating materials associated therewith the insulating material comprising a metallic compound, e.g. metal oxide, metal silicate

Abstract

A method of controlling a negative differential resistance (NDR) element is disclosed, which includes altering various NDR characteristics during operation to effectuate different NDR modes. By changing biasing conditions applied to the NDR element (such as a silicon based NDR FET) a peak-to-valley ratio (PVR) (or some other characteristic) can be modified dynamically to accommodate a desired operational change in a circuit that uses the NDR element. In a memory or logic application, for example, a valley current can be reduced during quiescent periods to reduce operating power. Thus an adaptive NDR element can be utilized advantageously within a conventional semiconductor circuit.
PCT/US2003/040268 2002-12-17 2003-12-17 Adaptive negative differential resistance device WO2004059697A2 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
EP03814122A EP1584107A4 (en) 2002-12-17 2003-12-17 Adaptive negative differential resistance device
AU2003303431A AU2003303431A1 (en) 2002-12-17 2003-12-17 Adaptive negative differential resistance device
JP2004563703A JP2006511941A (en) 2002-12-17 2003-12-17 Adaptive negative differential resistance device

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/321,090 US6812084B2 (en) 2002-12-09 2002-12-17 Adaptive negative differential resistance device
US10/321,090 2002-12-17

Publications (3)

Publication Number Publication Date
WO2004059697A2 WO2004059697A2 (en) 2004-07-15
WO2004059697A3 true WO2004059697A3 (en) 2005-04-14
WO2004059697B1 WO2004059697B1 (en) 2005-06-09

Family

ID=32680705

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2003/040268 WO2004059697A2 (en) 2002-12-17 2003-12-17 Adaptive negative differential resistance device

Country Status (7)

Country Link
US (2) US6812084B2 (en)
EP (1) EP1584107A4 (en)
JP (1) JP2006511941A (en)
KR (1) KR20050084252A (en)
CN (1) CN1745472A (en)
AU (1) AU2003303431A1 (en)
WO (1) WO2004059697A2 (en)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6812084B2 (en) * 2002-12-09 2004-11-02 Progressant Technologies, Inc. Adaptive negative differential resistance device
US6979580B2 (en) * 2002-12-09 2005-12-27 Progressant Technologies, Inc. Process for controlling performance characteristics of a negative differential resistance (NDR) device
US7151292B1 (en) * 2003-01-15 2006-12-19 Spansion Llc Dielectric memory cell structure with counter doped channel region
CN1790642A (en) * 2004-11-08 2006-06-21 松下电器产业株式会社 Method for fabricating semiconductor device
US7482619B2 (en) * 2005-09-07 2009-01-27 Samsung Electronics Co., Ltd. Charge trap memory device comprising composite of nanoparticles and method of fabricating the charge trap memory device
US7960774B2 (en) * 2005-12-05 2011-06-14 Electronics And Telecommunications Research Institute Memory devices including dielectric thin film and method of manufacturing the same
US20080023699A1 (en) * 2006-07-26 2008-01-31 Macronix International Co., Ltd. A test structure and method for detecting charge effects during semiconductor processing
US7388771B2 (en) * 2006-10-24 2008-06-17 Macronix International Co., Ltd. Methods of operating a bistable resistance random access memory with multiple memory layers and multilevel memory states
KR100795350B1 (en) * 2006-11-24 2008-01-17 삼성전자주식회사 Non-volatile memory device, method for manufacturing the same and method for operating the same
KR100799721B1 (en) * 2006-11-30 2008-02-01 삼성전자주식회사 Non-volatile memory device, method for manufacturing the same and method for operating the same
KR100913395B1 (en) * 2006-12-04 2009-08-21 한국전자통신연구원 Memory devices and method for fabricating the same
US20090003083A1 (en) * 2007-06-28 2009-01-01 Sandisk 3D Llc Memory cell with voltage modulated sidewall poly resistor
KR101357304B1 (en) * 2007-09-11 2014-01-28 삼성전자주식회사 Capacitorless DRAM and methods of manufacturing and operating the same
JP2010272638A (en) * 2009-05-20 2010-12-02 Toshiba Corp Semiconductor memory device and method for manufacturing the same
US8598027B2 (en) 2010-01-20 2013-12-03 International Business Machines Corporation High-K transistors with low threshold voltage
JP2012059996A (en) * 2010-09-10 2012-03-22 Elpida Memory Inc Method of manufacturing semiconductor device
TWI534897B (en) * 2011-01-14 2016-05-21 賽普拉斯半導體公司 Oxide-nitride-oxide stack having multiple oxynitride layers
US9812500B2 (en) 2014-01-31 2017-11-07 Hewlett Packard Enterprise Development Lp Negative differential resistance circuit element
US10704969B2 (en) * 2017-11-21 2020-07-07 The Boeing Company Stress sensor

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6490193B1 (en) * 2001-08-22 2002-12-03 Raytheon Company Forming and storing data in a memory cell

Family Cites Families (105)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3588736A (en) * 1969-06-30 1971-06-28 Ibm Three-terminal bulk negative resistance device operable in oscillatory and bistable modes
US3903542A (en) * 1974-03-11 1975-09-02 Westinghouse Electric Corp Surface gate-induced conductivity modulated negative resistance semiconductor device
US3974486A (en) * 1975-04-07 1976-08-10 International Business Machines Corporation Multiplication mode bistable field effect transistor and memory utilizing same
US4047974A (en) * 1975-12-30 1977-09-13 Hughes Aircraft Company Process for fabricating non-volatile field effect semiconductor memory structure utilizing implanted ions to induce trapping states
US4143393A (en) * 1977-06-21 1979-03-06 International Business Machines Corporation High field capacitor structure employing a carrier trapping region
JPS593964A (en) * 1982-06-29 1984-01-10 Semiconductor Res Found Semiconductor integrated circuit
FR2600821B1 (en) * 1986-06-30 1988-12-30 Thomson Csf HETEROJUNCTION AND DUAL CHANNEL SEMICONDUCTOR DEVICE, ITS APPLICATION TO A FIELD EFFECT TRANSISTOR, AND ITS APPLICATION TO A NEGATIVE TRANSDUCTANCE DEVICE
US4945393A (en) * 1988-06-21 1990-07-31 At&T Bell Laboratories Floating gate memory circuit and apparatus
JP2588590B2 (en) * 1988-07-20 1997-03-05 富士通株式会社 Semiconductor storage device
GB8823611D0 (en) 1988-10-07 1988-11-16 Barefoot R Waterflow differential electrical charging process for ores
US5021841A (en) * 1988-10-14 1991-06-04 University Of Illinois Semiconductor device with controlled negative differential resistance characteristic
DE69018842T2 (en) * 1989-01-24 1995-12-07 Philips Electronics Nv Integrated semiconductor device that includes a field effect transistor with an insulated gate biased at an elevated level.
US5032891A (en) * 1989-05-17 1991-07-16 Kabushiki Kaisha Toshiba Semiconductor memory device and manufacturing method thereof
US5162880A (en) * 1989-09-27 1992-11-10 Kabushiki Kaisha Toshiba Nonvolatile memory cell having gate insulation film with carrier traps therein
JPH03245504A (en) * 1990-02-23 1991-11-01 Sumitomo Heavy Ind Ltd Magnet for critical magnetic field measuring device
US5093699A (en) * 1990-03-12 1992-03-03 Texas A & M University System Gate adjusted resonant tunnel diode device and method of manufacture
US5084743A (en) * 1990-03-15 1992-01-28 North Carolina State University At Raleigh High current, high voltage breakdown field effect transistor
AU638812B2 (en) * 1990-04-16 1993-07-08 Digital Equipment Corporation A method of operating a semiconductor device
KR100198659B1 (en) * 1996-05-16 1999-06-15 구본준 Memory cell, memory device and its fabrication method
JP2773474B2 (en) 1991-08-06 1998-07-09 日本電気株式会社 Semiconductor device
US5357134A (en) * 1991-10-31 1994-10-18 Rohm Co., Ltd. Nonvolatile semiconductor device having charge trap film containing silicon crystal grains
DE69202554T2 (en) * 1991-12-25 1995-10-19 Nec Corp Tunnel transistor and its manufacturing process.
US5463234A (en) * 1992-03-31 1995-10-31 Kabushiki Kaisha Toshiba High-speed semiconductor gain memory cell with minimal area occupancy
JPH0637302A (en) * 1992-07-14 1994-02-10 Mitsuteru Kimura Tunnel transistor
JPH0661454A (en) * 1992-08-10 1994-03-04 Hitachi Ltd Semiconductor integrated circuit device
US5390145A (en) * 1993-04-15 1995-02-14 Fujitsu Limited Resonance tunnel diode memory
JP3613594B2 (en) 1993-08-19 2005-01-26 株式会社ルネサステクノロジ Semiconductor element and semiconductor memory device using the same
KR970009276B1 (en) * 1993-10-28 1997-06-09 금성일렉트론 주식회사 Method for manufacturing moset
US5606177A (en) * 1993-10-29 1997-02-25 Texas Instruments Incorporated Silicon oxide resonant tunneling diode structure
EP0655788B1 (en) 1993-11-29 1998-01-21 STMicroelectronics S.A. A volatile memory cell
US5448513A (en) * 1993-12-02 1995-09-05 Regents Of The University Of California Capacitorless DRAM device on silicon-on-insulator substrate
US5442194A (en) * 1994-01-07 1995-08-15 Texas Instruments Incorporated Room-temperature tunneling hot-electron transistor
US5477169A (en) * 1994-06-20 1995-12-19 Motorola Logic circuit with negative differential resistance device
US5455432A (en) * 1994-10-11 1995-10-03 Kobe Steel Usa Diamond semiconductor device with carbide interlayer
US5654558A (en) * 1994-11-14 1997-08-05 The United States Of America As Represented By The Secretary Of The Navy Interband lateral resonant tunneling transistor
US5773328A (en) 1995-02-28 1998-06-30 Sgs-Thomson Microelectronics, Inc. Method of making a fully-dielectric-isolated fet
WO1996027906A1 (en) * 1995-03-08 1996-09-12 Hitachi, Ltd. Semiconductor logic element and device using it
US5773996A (en) * 1995-05-22 1998-06-30 Nippon Telegraph And Telephone Corporation Multiple-valued logic circuit
JPH0922951A (en) 1995-06-07 1997-01-21 Sgs Thomson Microelectron Inc Zero power sram with embedding oxide separation formed in pattern
JP3397516B2 (en) * 1995-06-08 2003-04-14 三菱電機株式会社 Semiconductor storage device and semiconductor integrated circuit device
US5629546A (en) * 1995-06-21 1997-05-13 Micron Technology, Inc. Static memory cell and method of manufacturing a static memory cell
US5698997A (en) * 1995-09-28 1997-12-16 Mayo Foundation For Medical Education And Research Resonant tunneling diode structures for functionally complete low power logic
DE19600422C1 (en) * 1996-01-08 1997-08-21 Siemens Ag Electrically programmable memory cell arrangement and method for its production
US5888852A (en) * 1996-03-01 1999-03-30 Matsushita Electric Industrial Co., Ltd. Method for forming semiconductor microstructure, semiconductor device fabricated using this method, method for fabricating resonance tunneling device, and resonance tunnel device fabricated by this method
US5936265A (en) * 1996-03-25 1999-08-10 Kabushiki Kaisha Toshiba Semiconductor device including a tunnel effect element
JP3508809B2 (en) * 1996-04-04 2004-03-22 日本電信電話株式会社 Waveform generation circuit
KR100215866B1 (en) * 1996-04-12 1999-08-16 구본준 Dram of nothing capacitor and its fabrication method
US5761115A (en) * 1996-05-30 1998-06-02 Axon Technologies Corporation Programmable metallization cell structure and method of making same
GB2316533B (en) * 1996-08-16 1999-05-26 Toshiba Cambridge Res Center Semiconductor device
US6091077A (en) * 1996-10-22 2000-07-18 Matsushita Electric Industrial Co., Ltd. MIS SOI semiconductor device with RTD and/or HET
KR19980034078A (en) * 1996-11-05 1998-08-05 양승택 Hot Electron Device and Resonant Tunneling Hot Electronic Device
US5757051A (en) * 1996-11-12 1998-05-26 Micron Technology, Inc. Static memory cell and method of manufacturing a static memory cell
US5761114A (en) * 1997-02-19 1998-06-02 International Business Machines Corporation Multi-level storage gain cell with stepline
US5732014A (en) * 1997-02-20 1998-03-24 Micron Technology, Inc. Merged transistor structure for gain memory cell
US6130559A (en) * 1997-04-04 2000-10-10 Board Of Regents Of The University Of Texas System QMOS digital logic circuits
US5903170A (en) * 1997-06-03 1999-05-11 The Regents Of The University Of Michigan Digital logic design using negative differential resistance diodes and field-effect transistors
US5883549A (en) * 1997-06-20 1999-03-16 Hughes Electronics Corporation Bipolar junction transistor (BJT)--resonant tunneling diode (RTD) oscillator circuit and method
US5869845A (en) * 1997-06-26 1999-02-09 Texas Instruments Incorporated Resonant tunneling memory
DE19727466C2 (en) * 1997-06-27 2001-12-20 Infineon Technologies Ag DRAM cell arrangement and method for its production
US5883829A (en) * 1997-06-27 1999-03-16 Texas Instruments Incorporated Memory cell having negative differential resistance devices
US5895934A (en) * 1997-08-13 1999-04-20 The United States Of America As Represented By The Secretary Of The Army Negative differential resistance device based on tunneling through microclusters, and method therefor
TW396628B (en) * 1997-09-04 2000-07-01 Nat Science Council Structure and process for SiC single crystal/Si single crystal hetero-junction negative differential resistance
US6015739A (en) * 1997-10-29 2000-01-18 Advanced Micro Devices Method of making gate dielectric for sub-half micron MOS transistors including a graded dielectric constant
US6232643B1 (en) * 1997-11-13 2001-05-15 Micron Technology, Inc. Memory using insulator traps
JP4213776B2 (en) * 1997-11-28 2009-01-21 光照 木村 MOS gate Schottky tunnel transistor and integrated circuit using the same
US6104631A (en) * 1997-12-17 2000-08-15 National Scientific Corp. Static memory cell with load circuit using a tunnel diode
US6301147B1 (en) * 1997-12-17 2001-10-09 National Scientific Corporation Electronic semiconductor circuit which includes a tunnel diode
US6303942B1 (en) * 1998-03-17 2001-10-16 Farmer, Ii Kenneth Rudolph Multi-layer charge injection barrier and uses thereof
US6150242A (en) * 1998-03-25 2000-11-21 Texas Instruments Incorporated Method of growing crystalline silicon overlayers on thin amorphous silicon oxide layers and forming by method a resonant tunneling diode
US6128216A (en) * 1998-05-13 2000-10-03 Micron Technology Inc. High density planar SRAM cell with merged transistors
US6225165B1 (en) * 1998-05-13 2001-05-01 Micron Technology, Inc. High density SRAM cell with latched vertical transistors
US6545297B1 (en) * 1998-05-13 2003-04-08 Micron Technology, Inc. High density vertical SRAM cell using bipolar latchup induced by gated diode breakdown
US6229161B1 (en) 1998-06-05 2001-05-08 Stanford University Semiconductor capacitively-coupled NDR device and its applications in high-density high-speed memories and in power switches
US6124150A (en) * 1998-08-20 2000-09-26 Micron Technology, Inc. Transverse hybrid LOC package
DE19843959B4 (en) * 1998-09-24 2004-02-12 Infineon Technologies Ag Method for producing a semiconductor component with a blocking pn junction
JP2000182387A (en) * 1998-12-14 2000-06-30 Global Alliance Kk Non-volatile memory
EP1142124B1 (en) 1999-01-06 2006-05-24 Raytheon Company Method and system for quantizing an analog signal utilizing a clocked resonant tunneling diode pair
JP2000208647A (en) * 1999-01-12 2000-07-28 Internatl Business Mach Corp <Ibm> Eeprom memory cell and manufacture thereof
JP3475851B2 (en) 1999-04-28 2003-12-10 日本電気株式会社 Flip-flop circuit
US6366134B1 (en) 1999-09-16 2002-04-02 Texas Instruments Incorporated CMOS dynamic logic circuitry using quantum mechanical tunneling structures
DE69936654T2 (en) * 1999-12-09 2007-11-22 Hitachi Europe Ltd., Maidenhead memory array
EP1111620A3 (en) * 1999-12-22 2003-01-08 National University of Ireland, Cork A negative resistance device
US20020096723A1 (en) * 1999-12-31 2002-07-25 Kaoru Awaka Transient frequency in dynamic threshold metal-oxide-semiconductor field effect transistors
US6440805B1 (en) 2000-02-29 2002-08-27 Mototrola, Inc. Method of forming a semiconductor device with isolation and well regions
US6690030B2 (en) * 2000-03-06 2004-02-10 Kabushiki Kaisha Toshiba Semiconductor device with negative differential resistance characteristics
US6320784B1 (en) 2000-03-14 2001-11-20 Motorola, Inc. Memory cell and method for programming thereof
US6348394B1 (en) 2000-05-18 2002-02-19 International Business Machines Corporation Method and device for array threshold voltage control by trapped charge in trench isolation
US6448161B1 (en) * 2000-06-09 2002-09-10 Advanced Micro Devices, Inc. Silicon based vertical tunneling memory cell
US6294412B1 (en) * 2000-06-09 2001-09-25 Advanced Micro Devices Silicon based lateral tunneling memory cell
US6754104B2 (en) * 2000-06-22 2004-06-22 Progressant Technologies, Inc. Insulated-gate field-effect transistor integrated with negative differential resistance (NDR) FET
US6724655B2 (en) * 2000-06-22 2004-04-20 Progressant Technologies, Inc. Memory cell using negative differential resistance field effect transistors
US6512274B1 (en) 2000-06-22 2003-01-28 Progressant Technologies, Inc. CMOS-process compatible, tunable NDR (negative differential resistance) device and method of operating same
US6518589B2 (en) * 2000-06-22 2003-02-11 Progressant Technologies, Inc. Dual mode FET & logic circuit having negative differential resistance mode
US6559470B2 (en) * 2000-06-22 2003-05-06 Progressed Technologies, Inc. Negative differential resistance field effect transistor (NDR-FET) and circuits using the same
US6594193B2 (en) * 2000-06-22 2003-07-15 Progressent Technologies, Inc. Charge pump for negative differential resistance transistor
GB2364823A (en) * 2000-07-12 2002-02-06 Seiko Epson Corp TFT memory device having gate insulator with charge-trapping granules
US6465306B1 (en) * 2000-11-28 2002-10-15 Advanced Micro Devices, Inc. Simultaneous formation of charge storage and bitline to wordline isolation
US6444545B1 (en) * 2000-12-19 2002-09-03 Motorola, Inc. Device structure for storing charge and method therefore
US6552398B2 (en) * 2001-01-16 2003-04-22 Ibm Corporation T-Ram array having a planar cell structure and method for fabricating the same
US6713791B2 (en) * 2001-01-26 2004-03-30 Ibm Corporation T-RAM array having a planar cell structure and method for fabricating the same
JP4044293B2 (en) * 2001-02-13 2008-02-06 株式会社東芝 Semiconductor device and manufacturing method thereof
US6396731B1 (en) * 2001-03-30 2002-05-28 Taiwan Semiconductor Manufacturing Company, Ltd SRAM cell employing tunnel switched diode
AU2002307129A1 (en) * 2001-04-03 2002-10-21 Carnegie Mellon University Electronic circuit device, system and method
US6424174B1 (en) * 2001-10-17 2002-07-23 International Business Machines Corporation Low leakage logic gates
US6812084B2 (en) * 2002-12-09 2004-11-02 Progressant Technologies, Inc. Adaptive negative differential resistance device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6490193B1 (en) * 2001-08-22 2002-12-03 Raytheon Company Forming and storing data in a memory cell

Also Published As

Publication number Publication date
KR20050084252A (en) 2005-08-26
US20050064645A1 (en) 2005-03-24
US20040110337A1 (en) 2004-06-10
EP1584107A4 (en) 2006-07-26
EP1584107A2 (en) 2005-10-12
US6812084B2 (en) 2004-11-02
AU2003303431A1 (en) 2004-07-22
WO2004059697B1 (en) 2005-06-09
CN1745472A (en) 2006-03-08
AU2003303431A8 (en) 2004-07-22
WO2004059697A2 (en) 2004-07-15
US7254050B2 (en) 2007-08-07
JP2006511941A (en) 2006-04-06

Similar Documents

Publication Publication Date Title
WO2004059697A3 (en) Adaptive negative differential resistance device
US7408399B2 (en) Active driving of normally on, normally off cascoded configuration devices through asymmetrical CMOS
AU2003280105A1 (en) Driver for switching circuit and drive method
TW200605076A (en) Memory device
JP2001339045A5 (en)
WO2008084583A1 (en) Current switch circuit, d/a converter using same, semiconductor integrated circuit, and communication device
US7208974B1 (en) Rail-to-rail source followers
TW200638419A (en) Electric element, memory device, and semiconductor integrated circuit
WO2006089195A3 (en) Power supply circuit having voltage control loop and current control loop
KR970067335A (en) Semiconductor output circuit
WO2003021603A1 (en) Semiconductor integrated circuit, semiconductor non-volatile memory, memory card, and microcomputer
WO2006072094A8 (en) Apparatus and method for improving drive strength, leakage and stability of deep submicron mos transistors and memory cells
WO2002023642A3 (en) Thermoelectrical component and method for production thereof
EP3035335B1 (en) Differential sensing circuit with dynamic voltage reference for single-ended bit line memory
EP1793367A3 (en) Semiconductor device
WO2005057619A3 (en) An electronic device comprising enhancement mode phemt devices, depletion mode phemt devices, and power phemt devices on a single substrate and method of creation
JP2004205957A5 (en)
WO2018219177A1 (en) Level shifting circuit
EP1039470A3 (en) Semiconductor memory device
JPH0382151A (en) Mos type semiconductor integrated circuit
WO2004003915A3 (en) Enhanced read &amp; write methods for negative differential resistance (ndr) based memory device
JP4207774B2 (en) Inverter circuit
DE602004017664D1 (en) Static random access memory cell (SRAM) and memory unit containing it with extremely low power consumption
JP2010118133A (en) Semiconductor memory apparatus
TW200503417A (en) Semiconductor integrated circuit device

Legal Events

Date Code Title Description
AK Designated states

Kind code of ref document: A2

Designated state(s): AE AG AL AM AT AU AZ BA BB BG BR BY BZ CA CH CN CO CR CU CZ DE DK DM DZ EC EE ES FI GB GD GE GH GM HR HU ID IL IN IS JP KE KG KP KR KZ LC LK LR LS LT LU LV MA MD MG MK MN MW MX MZ NI NO NZ OM PG PH PL PT RO RU SC SD SE SG SK SL SY TJ TM TN TR TT TZ UA UG US UZ VC VN YU ZA ZM ZW

AL Designated countries for regional patents

Kind code of ref document: A2

Designated state(s): BW GH GM KE LS MW MZ SD SL SZ TZ UG ZM ZW AM AZ BY KG KZ MD RU TJ TM AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IT LU MC NL PT RO SE SI SK TR BF BJ CF CG CI CM GA GN GQ GW ML MR NE SN TD TG

121 Ep: the epo has been informed by wipo that ep was designated in this application
WWE Wipo information: entry into national phase

Ref document number: 168937

Country of ref document: IL

B Later publication of amended claims

Effective date: 20050421

WWE Wipo information: entry into national phase

Ref document number: 1020057010634

Country of ref document: KR

WWE Wipo information: entry into national phase

Ref document number: 2004563703

Country of ref document: JP

WWE Wipo information: entry into national phase

Ref document number: 2003814122

Country of ref document: EP

WWE Wipo information: entry into national phase

Ref document number: 20038A95850

Country of ref document: CN

WWP Wipo information: published in national office

Ref document number: 1020057010634

Country of ref document: KR

WWP Wipo information: published in national office

Ref document number: 2003814122

Country of ref document: EP

WWW Wipo information: withdrawn in national office

Ref document number: 2003814122

Country of ref document: EP