WO2004059378A2 - Backplanes for electro-optic displays - Google Patents
Backplanes for electro-optic displays Download PDFInfo
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- WO2004059378A2 WO2004059378A2 PCT/US2003/040257 US0340257W WO2004059378A2 WO 2004059378 A2 WO2004059378 A2 WO 2004059378A2 US 0340257 W US0340257 W US 0340257W WO 2004059378 A2 WO2004059378 A2 WO 2004059378A2
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/1365—Active matrix addressed cells in which the switching element is a two-electrode device
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
- H01H59/00—Electrostatic relays; Electro-adhesion relays
- H01H59/0009—Electrostatic relays; Electro-adhesion relays making use of micromechanics
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/165—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on translational movement of particles in a fluid under the influence of an applied field
- G02F1/166—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on translational movement of particles in a fluid under the influence of an applied field characterised by the electro-optical or magneto-optical effect
- G02F1/167—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on translational movement of particles in a fluid under the influence of an applied field characterised by the electro-optical or magneto-optical effect by electrophoresis
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
- H01H59/00—Electrostatic relays; Electro-adhesion relays
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136213—Storage capacitors associated with the pixel electrode
Definitions
- This invention relates to backplanes for electro-optic displays, and to processes for the formation of such backplanes.
- the backplanes of the present invention are especially, but not exclusively, intended for use with particle-based electrophoretic displays in which one or more types of electrically charged particles are suspended in a liquid and are moved through the liquid under the influence of an electric field to change the appearance of the display.
- optical-optic as applied to a material or a display, is used herein in its conventional meaning in the imaging art to refer to a material having first and second display states differing in at least one optical property, the material being changed from its first to its second display state by application of an electric field to the material.
- the optical property is typically color perceptible to the human eye, it may be another optical property, such as optical transmission, reflectance, luminescence or, in the case of displays intended for machine reading, pseudo-color in the sense of a change in reflectance of electromagnetic wavelengths outside the visible range.
- gray state is used herein in its conventional meaning in the imaging art to refer to a state intermediate two extreme optical states of a pixel, and does not necessarily imply a black-white transition between these two extreme states.
- extreme states are white and deep blue, so that an intermediate "gray state” would actually be pale blue. Indeed, as already mentioned the transition between the two extreme states may not be a color change at all.
- bistable and “bistability” are used herein in their conventional meaning in the art to refer to displays comprising display elements having first and second display states differing in at least one optical property, and such that after any given element has been driven, by means of an addressing pulse of finite duration, to assume either its first or second display state, after the addressing pulse has terminated, that state will persist for at least several times, for example at least four times, the minimum duration of the addressing pulse required to change the state of the display element.
- some particle-based electrophoretic displays capable of gray scale are stable not only in their extreme black and white states but also in their intermediate gray states, and the same is true of some other types of electro-optic displays. This type of display is properly called “multi-stable” rather than bistable, although for convenience the term “bistable” may be used herein to cover both bistable and multi-stable displays.
- electro-optic displays are known.
- One type of electro-optic display is a rotating bichromal member type as described, for example, in U.S. Patents Nos. 5,808,783; 5,777,782; 5,760,761; 6,054,071 6,055,091; 6,097,531; 6,128,124; 6,137,467; and 6,147,791 (although this type of display is often referred to as a "rotating bichromal ball" display, the term "rotating bichromal member" is preferred as more accurate since in some of the patents mentioned above the rotating members are not spherical).
- Such a display uses a large number of small bodies (typically spherical or cylindrical) which have two or more sections with differing optical characteristics, and an internal dipole. These bodies are suspended within liquid-filled vacuoles within a matrix, the vacuoles being filled with liquid so that the bodies are free to rotate. The appearance of the display is changed to applying an electric field thereto, thus rotating the bodies to various positions and varying which of the sections of the bodies is seen through a viewing surface.
- This type of electro-optic medium is typically bistable.
- electro-optic display uses an electrochromic medium, for example an electrochromic medium in the form of a nanochromic film comprising an electrode formed at least in part from a semi-conducting metal oxide and a plurality of dye molecules capable of reversible color change attached to the electrode; see, for example O'Regan, B., et al., Nature 1991, 353, 737; and Wood, D., Information Display, 18(3), 24 (March 2002). See also Bach, U., et al., Adv. Mater., 2002, 14(11), 845. Nanochromic films of this type are also described, for example, in U.S. Patent No. 6,301,038, International Application Publication No. WO 01/27690, and in U.S. Patent Application 2003/0214695. This type of medium is also typically bistable.
- Electrophoretic display Another type of electro-optic display, which has been the subject of intense research and development for a number of years, is the particle-based electrophoretic display, in which a plurality of charged particles move through a suspending fluid under the influence of an electric field.
- Electrophoretic displays can have attributes of good brightness and contrast, wide viewing angles, state bistability, and low power consumption when compared with liquid crystal displays. Nevertheless, problems with the long-term image quality of these displays have prevented their widespread usage. For example, particles that make up electrophoretic displays tend to settle, resulting in inadequate service-life for these displays.
- encapsulated electrophoretic media comprise numerous small capsules, each of which itself comprises an internal phase containing electrophoretically-mobile particles suspended in a liquid suspension medium, and a capsule wall surrounding the internal phase.
- the capsules are themselves held within a polymeric binder to form a coherent layer positioned between two electrodes.
- Encapsulated media of this type are described, for example, in U.S. Patents Nos. 5,930,026; 5,961,804; 6,017,584; 6,067,185
- the charged particles and the suspending fluid are not encapsulated within capsules but instead are retained within a plurality of cavities formed within a carrier medium, typically a polymeric film.
- an active matrix display architecture which has a single common, transparent electrode on one side of the electro-optic layer, this common electrode extending across all the pixels of the display.
- this common electrode lies between the electro-optic layer and the observer and forms a viewing surface through which an observer views the display.
- On the opposed side of the electro-optic layer is disposed a matrix of pixel electrodes arranged in rows and columns such that each pixel electrode is uniquely defined by the intersection of a single row and a single column.
- Each pixel electrode is associated with at least non-linear device, typically a thin film transistor, although diodes can also be used.
- the gates of the transistors in each row are connected via a single elongate row electrode to a row driver.
- the source electrodes of the transistors in each column are connected via a single elongate column electrode to a column driver.
- the drain electrode of each transistor is connected directly to the pixel electrode. It will be appreciated that the assignment of the gates to rows and the source electrodes to columns is arbitrary, and could be reversed, as could the assignment of source and drain electrodes.
- the array of non-linear devices and their associated row and column electrodes form the backplane of the display; typically, this backplane will include the row and column driver circuitry in the same physical unit.
- an active matrix architecture allows the relatively complex backplane to be fabricated separately from the remainder of the display using conventional semiconductor fabrication techniques.
- the remainder, or front portion, of the display may, for example, be fabricated inexpensively by depositing a layer of electro-optic medium on a polymeric film on which has previously been deposited a substantially transparent conductive layer, formed, for example, from indium tin oxide (ITO) or an organic polymeric conductor.
- ITO indium tin oxide
- organic polymeric conductor organic polymeric conductor
- display backplanes are fabricated using semiconductor fabrication techniques.
- semiconductor fabrication technology has been driven by the need to manufacture the enormous complex integrated circuits ("chips") used as central processing units (“CPU's”) and other logic units in computers.
- Such CPU's require the provision of millions of transistors in each unit, and both the requirements to minimize heat dissipation within the CPU and the economic need to form as many CPU's as possible on each semiconductor wafer processed (the cost of processing the wafer being essentially independent of the number of CPU's formed) have led to very high packing densities of transistors; the latest CPU's are fabricated using technology in which individual features can be as small as about 0.13 ⁇ m, with individual transistors of the order of 1 ⁇ m square, and spacings between adjacent transistors of the same order of magnitude.
- Such small transistors and high packing densities are not needed in display backplanes, which will typically have pixels, and thus transistors or other non-linear devices, spaced at intervals of the order of 0.1 mm.
- backplanes are typically of the order of 100 mm square (and can be much larger) and thus much greater in size than chips. Consequently, there is a great need to reduce the cost per unit area of fabricating backplanes.
- the present invention provides various improvements in backplanes and processes for their fabrication.
- this invention provides a backplane for an electro-optic display, the backplane comprising a pixel electrode, a voltage supply line arranged to supply a voltage to the pixel electrode, and a micromechanical switch disposed between the voltage supply line and the pixel electrode, the micromechanical switch having an open state, in which the voltage supply line is not electrically connected to the pixel electrode, and a closed state, in which the voltage supply line is electrically connected to the pixel electrode.
- this invention extends to an electro-optic display (“a MEMS display”) comprising a MEMS backplane.
- a MEMS display comprising a MEMS backplane.
- this invention provides an electro-optic display comprising: a layer of an electro-optic medium having first and second display states differing in at least one optical property, the electro-optic medium being capable of being changed from its first to its second display state by application of an electric field to the medium; and a backplane disposed adjacent the layer of electro-optic medium, the backplane comprising a pixel electrode arranged, upon application of a voltage thereto, to apply an electric field to the electro-optic medium, the backplane further comprising a voltage supply line arranged to supply a voltage to the pixel electrode, and a micromechanical switch disposed between the voltage supply line and the pixel electrode, the micromechanical switch having an open state, in which the voltage supply line is not electrically connected to the pixel electrode, and a closed state, in which the voltage supply line is electrically connected to the
- Such a MEMS display may further comprise a light transmissive electrode disposed on the opposed side of the layer of electro-optic medium from the backplane.
- the electro-optic medium in a MEMS display may be of any of the types discussed above.
- the electro-optic medium may be a rotating bichromal member or electrochromic medium.
- the electro-optic medium may be an encapsulated electrophoretic medium, which may be of the type in which the electrophoretic particles are encapsulated within true capsule walls, of the polymer-dispersed type, or of the microcell type.
- This invention also provides a process for forming a backplane for an electro-optic display, the process comprising: providing a substrate; forming spaced first, second and third electrodes on the substrate; thereafter forming a sacrificial layer on the substrate, the sacrificial layer covering the first and second electrodes but leaving at least part of the third electrode exposed; thereafter depositing conductive material on to the substrate so as to form a cantilever beam member having a first section contacting the exposed part of the third electrode, and a second section extending over the sacrificial layer so as to extend over at least part of each of the second and first electrodes; and thereafter removing the sacrificial layer, thereby leaving the second section of the cantilever beam member free to into and out of contact with the first electrode under the influence of a voltage applied to the second electrode.
- the step of depositing conductive material on to the substrate may include depositing a capacitor electrode spaced from the cantilever beam member but overlying part of the first electrode so that the capacitor electrode and the first electrode together form a capacitor.
- the process may also include, after removal of the sacrificial layer, depositing an encapsulant layer on to the substrate so as to cover at least the cantilever beam member.
- this invention provides a process for forming at least one electronic component of an electronic circuit on a substrate, the process comprising: forming on the substrate a layer of a component material which can form the at least one electronic component; forming a layer of an embossable material over the layer of component material; imagewise embossing the layer of embossable material to form at least one first portion and at least one second portion having a greater thickness than that of the at least one first portion; etching the embossable material to remove the at least one first portion thereof while leaving embossable material present in the at least one second portion thereof, thereby exposing the component material underlying the at least one first portion of the embossable material; and thereafter etching the exposed portions of the component material, thereby patterning the layer of component material and forming the at least one electronic component therein.
- the embossing process may include, after patterning of the layer of component material, removing the remaining embossable material from the substrate.
- the imagewise embossing of the embossable material may be effected by a roller.
- the embossable material may comprise a photoresist.
- the photoresist may be heated ("soft baked") prior to the imagewise embossing thereof, in order to remove solvent from the photoresist.
- the passivation layer may be formed from a thermally curable polymer or a radiation curable polymer.
- the substrate comprises a metal film covered with an insulating layer, the transistor being formed on the insulating layer.
- the substrate may, for example, comprise a stainless steel foil covered with a polyimide insulating layer.
- This invention extends to an electro-optic display including a buried transistor backplane of the invention.
- this invention provides an electro-optic display comprising: a layer of an electro-optic medium having first and second display states differing in at least one optical property, the electro-optic medium being capable of being changed from its first to its second display state by application of an electric field to the medium; and a buried transistor backplane of the present invention disposed adjacent the layer of electro-optic medium, and arranged, upon application of a voltage to the pixel electrode thereof, to apply an electric field to the electro-optic medium.
- FIGS lA to ID of the accompanying drawings are schematic side elevations of a portion of a MEMS backplane of the present invention, this portion comprising a single microelectromechanical switch, the side elevations being taken at various stages during the fabrication of the backplane.
- Figure 2 is a top plan view of part of the finished backplane shown in Figure ID.
- Figures 4A to 4E are schematic side elevations showing various stages of an embossing process of the present invention.
- Figure 5A shows the formula of a preferred polymer for use in the embossing process of the present invention.
- Figure 5B shows the formula of an alternative methacrylate repeating unit which can be substituted for the methacrylate repeating unit shown in Figure 5A.
- Figures 6 to 12 are current/gate voltage curves for various buried transistors intended for use in buried transistor backplanes of the present invention, and similar curves for certain control experiments.
- this invention has several different aspects, each providing an improvement in backplanes for electro-optic displays; some aspects of the invention may also be useful in other applications.
- the major aspects of the present invention will be described separately, but it should be understood that more than one aspect of the invention may be used in the fabrication of a single backplane or other electronic component.
- a MEMS backplane of the present invention may be fabricated using an embossing method of the present invention.
- Part A MEMS backplane
- nonlinear switching elements are fabricated from amorphous silicon, polysilicon and organic semiconductors.
- Diode switching elements include metal insulator metal
- MIM metal semiconductor insulator
- MSI metal semiconductor insulator
- Schottky metal semiconductor insulator
- NIN diodes NIN diodes
- Amorphous and polycrystallme silicon based transistors require relatively high temperature (> 200°C) deposition steps to produce stable devices.
- the on/off ratio of either type of switching element is less than is desirable and is limited by the silicon mobility of the semiconductor layer ( ⁇ 1.0 cm 2 /Vs for amorphous silicon and ⁇ 300 cm 2 /Vs for polycrystallme silicon.
- Transistor switches have relatively large gate to pixel stray capacitance, which causes voltage coupling leading to DC voltage imbalances at the pixel, and thus possibly undesirable artifacts on the image displayed.
- Diodes have very large select line to pixel parasitic capacitance and thus require tight design rules. Also, for reasons explained in the aforementioned WO 01/07961, it is advantageous to provide a capacitor for each pixel in a backplane in order to maintain the driving voltage across the pixel, and it is difficult to provide such a capacitor in a diode based backplane.
- the MEMS backplane of the present invention reduces or eliminates these problems of prior art backplanes.
- a preferred form of such a MEMS backplane for an electro-optic display has a plurality of MicroElectroMechamcal
- MEMS Mobility Management System
- the backplane shown in Figure 2 closely resembles a conventional transistor-based active matrix backplane.
- the backplane comprises a plurality of parallel row electrodes R, which are connected to a row driver (not shown) of conventional design such that at any given moment only one of the row electrodes R is selected (i.e., has a working voltage applied thereto), while the other rows are typically set to the same voltage a the single common electrode which is provided on the opposed side of the electro-optic medium from the illustrated backplane; after a predetermined interval, the originally-selected row electrode R is deselected, the next row electrode R is selected, and the sequence continues so that each row electrode R is selected in turn in a cyclic manner.
- the backplane further comprises column electrodes C, which run parallel to each other but perpendicular to the row electrodes, and first or pixel electrodes 104, only one of which is shown in Figure 2.
- the pixel electrodes 104 are arranged in a rectangular array such that each pixel electrode is uniquely associated with the intersection of one row electrode R and one column electrode C.
- the pixel electrodes 104 are connected to their associated column electrodes C via a MEMS switch comprising a cantilever beam 112, an actuator (or second) electrode 106 (which has the form of an extension of the associated row electrode R, and a source (or third) electrode 108, which has the form of an extension of the associated column electrode C.
- the backplane shown in Figure 2 further comprises capacitor electrodes 114, one associated with each pixel electrode 104, the capacitor electrodes 114 forming capacitors with the adjacent portions of the column electrodes C.
- the process used to form the backplane shown in Figure 2 will now be described with reference to Figures lAto ID.
- the process begins from an insulating substrate 102, which may, for example, be a polymeric film or a polymer-coated metal foil.
- a thin metal layer is deposited on the substrate 102 and patterned in any convenient manner to form three electrodes, namely the pixel electrode 104, the "gate" or actuator electrode 106 and the source electrode 108 to produce the structure shown in Figure 1 A.
- a photoresist layer is added and patterned to leave apertures into which the cantilever beam 112 and a capacitor electrode 114 are then plated, preferably using a room temperature electroplate solution and a low stress material such as gold (the position of the capacitor electrode 114 is distorted in Figures lA to ID for ease of illustration).
- the thickness of the beam 112 is desirably approximately 2-4 ⁇ m.
- the photoresist layer is stripped to give the structure shown in Figure 1C and then the sacrificial layer 110 is removed, preferably using a wet chemical etch, thus freeing the cantilever beam 112.
- a layer of an embossable material (hereinafter for convenience called a "resist") 406 is then applied over the material 404, and the resist is embossed using a "master stamp” (which is preferably in the form of an embossed roller 408, as illustrated in Figure 4A) to impart a texture or pattern to the resist.
- a master stamp which is preferably in the form of an embossed roller 408, as illustrated in Figure 4A
- this embossing step shapes the resist 406 into thick (second) regions 406A and thin (first) regions 406B, the division of the resist 406 between the two types of regions being predetermined in any desired manner by the patterning of the roller 408.
- the patterned resist is etched slightly (using any of the conventional etching processes well known to those skilled in semiconductor fabrication technology) to an extent sufficient to remove the thin regions 406B and expose the underlying material 404, while leaving parts of the material 404 still covered by the thick regions 406A, thus producing the structure shown in Figure 4C.
- the substrate is then subjected to a second etching operation to etch the exposed parts of the material 404 to the desired extent, thus producing the structure shown in Figure 4D, and finally the resist is stripped from the substrate as shown in Figure 4E to leave the final patterned material 404 on the substrate 402.
- the embossable material applied to the surface may be chosen to optimize the patterning step.
- Commercially available photoresists may be used as the embossable material.
- the photoresist may be embossed at temperatures exceeding its glass transition temperature (T g ), and may be wet or dry etched to expose the underlying material.
- T g glass transition temperature
- the resist can be chosen to be resistant to the chemistry used to etch the underlying material, and to be easily stripped from the surface thereof after patterning of the underlying material, hi some cases, it may necessary or desirable to "soft bake" the resist to remove solvents therefrom before embossing of the resist.
- a molten material may be used as the embossable material or resist.
- waxy materials e.g. alkanes such as octacosane, nonadecane, etc.
- These waxy materials may be coated in the liquid phase using a heated slot die, intaglio plate, spin coating chuck, offset printing rollers, or other similar devices known to those skilled in the field.
- the molten material will typically solidify into a thin, embossable film as it is deposited, and may then be embossed and etched back using wet or dry etching techniques.
- the patterned resist film serves as an etch mask for the underlying material, and, as already mentioned, is stripped following the etching of the underlying material.
- Solvents such as hexane strip the aforementioned waxy materials effectively, and such a process is advantageous because it is not necessary to dry solvents from the resist after its deposition. Also, with proper selection ("tuning") of the chemicals used, relatively non-toxic solvents may be used to strip the wavy material from the underlying material after patterning is complete.
- a co-polymer tuned for the embossed-resist concept may be used, for example, the co-polymer of 4-hydroxystyrene and butyl-methacrylate shown in Figure 5A.
- the 4-hydroxystyrene component of this block copolymer is base soluble, and the copolymer deblocks in the presence of an acid. Consequently, the copolymer exhibits several beneficial properties in the embossed resist process. Firstly, adjustment of the molecular weight of the polymer allows its glass transition temperature to be adjusted within the range of from about 100 to about 150°C, which is an acceptable embossing temperature range.
- a weak base solution may be used to etch back the patterned copolymer, thereby exposing the underlying material. The acid used to etch most common underlying materials (metals, semiconductors, insulators) will deblock the copolymer during etching of the underlying material, thus enabling easy removal of the resist after etching is complete.
- the methacrylate-based block shown in Figure 5B may be used in place of the butyl methacrylate block shown in Figure 5 A in the embossed resist copolymer.
- the use of this different block enables the embossed resist to thermally deblock at a temperature of approximately 175 to 180°C. Thermal deblocking is a helpful alternative route if the underlying material to be patterned is not etched using a conventional acid etch chemistry as described above.
- the pits on a CD are typically less than 250 nm deep, whereas in the present invention, it is typically desirable to make the features on the master stamp of the order of 1 to 10 ⁇ m deep, because to achieve a good imprint the stamp features should be approximately 2 to 5 times as deep as the resist thickness, which is typically of the order of 100 to 1000 nm.
- photoresists optimized for thick film processing should be used during master fabrication.
- SU- 8 resist may be used to produce a film as thick as 100 ⁇ m or more.
- sloped sidewalls In order to ensure easy release of the nickel master from its template, it is preferable to build sloped sidewalls on the features of the master. The sloped sidewall technique has been employed in forming masters used to replicate high-throughput drug discovery systems, but has not apparently been used in an embossed resist process.
- the embossed resist process may be successfully completed using all-wet processing, i.e. no expensive vacuum steps are required.
- the embossed resist process is well suited to high-throughput roll-to-roll patterning using a roller as the master stamp, as shown in Figure 4A.
- Part C Buried transistor backplanes
- the backplane and the front part of the display are typically fabricated as separate units and laminated together to produce the final display.
- Such lamination typically requires the use of a lamination adhesive to bond the backplane to the front part of the display.
- the exposed surface of the backplane as fabricated is, in the final display, exposed to the lamination adhesive, and in many cases lamination adhesives contain materials which may deleteriously affect the performance of transistors or other non-linear devices on the exposed surface of the backplane.
- epoxy, polyurethane, silicon, polyacrylate and polyimide polymers can be used in place of silicon nitride as passivation layers to encapsulate and protect the transistors or other non-linear devices of backplanes used in electro-optic displays.
- Preferred polymers can be applied to the backplane by screen printing, a process which much less complicated and requires less equipment than PECVD.
- the polymer encapsulants used in the present invention may be curable either thermally or by radiation, preferably UN radiation.
- Preferred thermally curable materials include EpoTek H70E-2LC from Epoxy Technology, and DuPont 5036 from DuPont Electronic Materials.
- Preferred UN curable materials include TGH 1003x2 from Allied Photochemical Inc., and CM116-20 from Creative Materials Inc. The properties and curing conditions of these material are summarized in Table 2 below: Table 2 : Polymeric materials
- CM 116-20 encapsulated TFT's have better sub-threshold slope than the control device.
- Figures 11 and 12 illustrate what can happen if the wrong encapsulant is chosen.
- Figure 11 shows that the amorphous silicon TFT's were almost destroyed when encapsulated by EpoTek H62
- Figure 12 shows that the TFT's were degraded when encapsulated with Electrodag 452SS, and that the TFT's become more leaky, with high off currents.
- the present invention thus provides a low cost process for the protection of transistors and other non-linear devices used in the backplanes of electro-optic displays.
- the polymeric encapsulants used can be deposited and patterned by screen-printing, a low cost process as compared with the PECND silicon nitride deposition and photolithography patterning process used in the prior art process discussed above.
Abstract
Description
Claims
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JP2004563695A JP2006510066A (en) | 2002-12-16 | 2003-12-16 | Backplane for electro-optic display |
AU2003299673A AU2003299673A1 (en) | 2002-12-16 | 2003-12-16 | Backplanes for electro-optic displays |
EP03799958.8A EP1573389B1 (en) | 2002-12-16 | 2003-12-16 | Backplanes for electro-optic displays |
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EP (1) | EP1573389B1 (en) |
JP (3) | JP2006510066A (en) |
KR (2) | KR100937613B1 (en) |
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Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
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WO2006049762A1 (en) | 2004-10-28 | 2006-05-11 | Hewlett-Packard Development Company, L.P. | Metal-insulator-metal device |
US7692195B2 (en) | 2007-11-09 | 2010-04-06 | Seiko Epson Corporation | Active-matrix device, electro-optical display device, and electronic apparatus |
US8223285B2 (en) | 2007-11-09 | 2012-07-17 | Seiko Epson Corporation | Active matrix device, method for manufacturing switching element, electro-optical display device, and electronic apparatus |
EP3067744A2 (en) | 2004-03-23 | 2016-09-14 | E Ink Corporation | Light modulators |
Families Citing this family (245)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7999787B2 (en) | 1995-07-20 | 2011-08-16 | E Ink Corporation | Methods for driving electrophoretic displays using dielectrophoretic forces |
US7411719B2 (en) | 1995-07-20 | 2008-08-12 | E Ink Corporation | Electrophoretic medium and process for the production thereof |
US7193625B2 (en) | 1999-04-30 | 2007-03-20 | E Ink Corporation | Methods for driving electro-optic displays, and apparatus for use therein |
US7848006B2 (en) | 1995-07-20 | 2010-12-07 | E Ink Corporation | Electrophoretic displays with controlled amounts of pigment |
US8139050B2 (en) | 1995-07-20 | 2012-03-20 | E Ink Corporation | Addressing schemes for electronic displays |
US7583251B2 (en) | 1995-07-20 | 2009-09-01 | E Ink Corporation | Dielectrophoretic displays |
US8040594B2 (en) | 1997-08-28 | 2011-10-18 | E Ink Corporation | Multi-color electrophoretic displays |
AU5094699A (en) | 1998-07-08 | 2000-02-01 | E-Ink Corporation | Methods for achieving improved color in microencapsulated electrophoretic devices |
US7119772B2 (en) | 1999-04-30 | 2006-10-10 | E Ink Corporation | Methods for driving bistable electro-optic displays, and apparatus for use therein |
US8115729B2 (en) | 1999-05-03 | 2012-02-14 | E Ink Corporation | Electrophoretic display element with filler particles |
US8009348B2 (en) | 1999-05-03 | 2011-08-30 | E Ink Corporation | Machine-readable displays |
US7893435B2 (en) | 2000-04-18 | 2011-02-22 | E Ink Corporation | Flexible electronic circuits and displays including a backplane comprising a patterned metal foil having a plurality of apertures extending therethrough |
US7030854B2 (en) | 2001-03-13 | 2006-04-18 | E Ink Corporation | Apparatus for displaying drawings |
US7679814B2 (en) | 2001-04-02 | 2010-03-16 | E Ink Corporation | Materials for use in electrophoretic displays |
US8390918B2 (en) | 2001-04-02 | 2013-03-05 | E Ink Corporation | Electrophoretic displays with controlled amounts of pigment |
US20050156340A1 (en) | 2004-01-20 | 2005-07-21 | E Ink Corporation | Preparation of capsules |
US7535624B2 (en) * | 2001-07-09 | 2009-05-19 | E Ink Corporation | Electro-optic display and materials for use therein |
US6982178B2 (en) | 2002-06-10 | 2006-01-03 | E Ink Corporation | Components and methods for use in electro-optic displays |
US7561324B2 (en) | 2002-09-03 | 2009-07-14 | E Ink Corporation | Electro-optic displays |
US8593396B2 (en) | 2001-11-20 | 2013-11-26 | E Ink Corporation | Methods and apparatus for driving electro-optic displays |
US8558783B2 (en) | 2001-11-20 | 2013-10-15 | E Ink Corporation | Electro-optic displays with reduced remnant voltage |
US9530363B2 (en) | 2001-11-20 | 2016-12-27 | E Ink Corporation | Methods and apparatus for driving electro-optic displays |
US9412314B2 (en) | 2001-11-20 | 2016-08-09 | E Ink Corporation | Methods for driving electro-optic displays |
US7952557B2 (en) | 2001-11-20 | 2011-05-31 | E Ink Corporation | Methods and apparatus for driving electro-optic displays |
US8125501B2 (en) | 2001-11-20 | 2012-02-28 | E Ink Corporation | Voltage modulated driver circuits for electro-optic displays |
US7223672B2 (en) | 2002-04-24 | 2007-05-29 | E Ink Corporation | Processes for forming backplanes for electro-optic displays |
US7190008B2 (en) | 2002-04-24 | 2007-03-13 | E Ink Corporation | Electro-optic displays, and components for use therein |
US8049947B2 (en) | 2002-06-10 | 2011-11-01 | E Ink Corporation | Components and methods for use in electro-optic displays |
US7843621B2 (en) | 2002-06-10 | 2010-11-30 | E Ink Corporation | Components and testing methods for use in the production of electro-optic displays |
US7554712B2 (en) | 2005-06-23 | 2009-06-30 | E Ink Corporation | Edge seals for, and processes for assembly of, electro-optic displays |
US7110164B2 (en) | 2002-06-10 | 2006-09-19 | E Ink Corporation | Electro-optic displays, and processes for the production thereof |
US8363299B2 (en) | 2002-06-10 | 2013-01-29 | E Ink Corporation | Electro-optic displays, and processes for the production thereof |
US7649674B2 (en) | 2002-06-10 | 2010-01-19 | E Ink Corporation | Electro-optic display with edge seal |
US9470950B2 (en) | 2002-06-10 | 2016-10-18 | E Ink Corporation | Electro-optic displays, and processes for the production thereof |
US20080024482A1 (en) | 2002-06-13 | 2008-01-31 | E Ink Corporation | Methods for driving electro-optic displays |
US7839564B2 (en) | 2002-09-03 | 2010-11-23 | E Ink Corporation | Components and methods for use in electro-optic displays |
US20130063333A1 (en) | 2002-10-16 | 2013-03-14 | E Ink Corporation | Electrophoretic displays |
US7417782B2 (en) * | 2005-02-23 | 2008-08-26 | Pixtronix, Incorporated | Methods and apparatus for spatial light modulation |
US7910175B2 (en) * | 2003-03-25 | 2011-03-22 | E Ink Corporation | Processes for the production of electrophoretic displays |
US10726798B2 (en) | 2003-03-31 | 2020-07-28 | E Ink Corporation | Methods for operating electro-optic displays |
US8174490B2 (en) | 2003-06-30 | 2012-05-08 | E Ink Corporation | Methods for driving electrophoretic displays |
US20050122563A1 (en) | 2003-07-24 | 2005-06-09 | E Ink Corporation | Electro-optic displays |
US20070002009A1 (en) * | 2003-10-07 | 2007-01-04 | Pasch Nicholas F | Micro-electromechanical display backplane and improvements thereof |
US8319759B2 (en) | 2003-10-08 | 2012-11-27 | E Ink Corporation | Electrowetting displays |
US8177942B2 (en) | 2003-11-05 | 2012-05-15 | E Ink Corporation | Electro-optic displays, and materials for use therein |
US7551346B2 (en) * | 2003-11-05 | 2009-06-23 | E Ink Corporation | Electro-optic displays, and materials for use therein |
US20110164301A1 (en) | 2003-11-05 | 2011-07-07 | E Ink Corporation | Electro-optic displays, and materials for use therein |
US7672040B2 (en) * | 2003-11-05 | 2010-03-02 | E Ink Corporation | Electro-optic displays, and materials for use therein |
EP2487674B1 (en) * | 2003-11-05 | 2018-02-21 | E Ink Corporation | Electro-optic displays |
US8928562B2 (en) | 2003-11-25 | 2015-01-06 | E Ink Corporation | Electro-optic displays, and methods for driving same |
US20080136774A1 (en) | 2004-07-27 | 2008-06-12 | E Ink Corporation | Methods for driving electrophoretic displays using dielectrophoretic forces |
US11250794B2 (en) | 2004-07-27 | 2022-02-15 | E Ink Corporation | Methods for driving electrophoretic displays using dielectrophoretic forces |
US7746529B2 (en) | 2005-02-23 | 2010-06-29 | Pixtronix, Inc. | MEMS display apparatus |
US9229222B2 (en) | 2005-02-23 | 2016-01-05 | Pixtronix, Inc. | Alignment methods in fluid-filled MEMS displays |
US7755582B2 (en) | 2005-02-23 | 2010-07-13 | Pixtronix, Incorporated | Display methods and apparatus |
US9261694B2 (en) | 2005-02-23 | 2016-02-16 | Pixtronix, Inc. | Display apparatus and methods for manufacture thereof |
US9158106B2 (en) | 2005-02-23 | 2015-10-13 | Pixtronix, Inc. | Display methods and apparatus |
US20070205969A1 (en) | 2005-02-23 | 2007-09-06 | Pixtronix, Incorporated | Direct-view MEMS display devices and methods for generating images thereon |
US8519945B2 (en) | 2006-01-06 | 2013-08-27 | Pixtronix, Inc. | Circuits for controlling display apparatus |
US7271945B2 (en) * | 2005-02-23 | 2007-09-18 | Pixtronix, Inc. | Methods and apparatus for actuating displays |
US7675665B2 (en) | 2005-02-23 | 2010-03-09 | Pixtronix, Incorporated | Methods and apparatus for actuating displays |
US8310442B2 (en) | 2005-02-23 | 2012-11-13 | Pixtronix, Inc. | Circuits for controlling display apparatus |
US9082353B2 (en) | 2010-01-05 | 2015-07-14 | Pixtronix, Inc. | Circuits for controlling display apparatus |
US8482496B2 (en) | 2006-01-06 | 2013-07-09 | Pixtronix, Inc. | Circuits for controlling MEMS display apparatus on a transparent substrate |
US8159428B2 (en) | 2005-02-23 | 2012-04-17 | Pixtronix, Inc. | Display methods and apparatus |
US7999994B2 (en) | 2005-02-23 | 2011-08-16 | Pixtronix, Inc. | Display apparatus and methods for manufacture thereof |
US7742016B2 (en) | 2005-02-23 | 2010-06-22 | Pixtronix, Incorporated | Display methods and apparatus |
WO2007048096A2 (en) | 2005-10-18 | 2007-04-26 | E Ink Corporation | Components for electro-optic displays |
US20080043318A1 (en) | 2005-10-18 | 2008-02-21 | E Ink Corporation | Color electro-optic displays, and processes for the production thereof |
KR20070076221A (en) * | 2006-01-18 | 2007-07-24 | 삼성전자주식회사 | Electro phoretic indication display |
US7547568B2 (en) * | 2006-02-22 | 2009-06-16 | Qualcomm Mems Technologies, Inc. | Electrical conditioning of MEMS device and insulating layer thereof |
US8526096B2 (en) | 2006-02-23 | 2013-09-03 | Pixtronix, Inc. | Mechanical light modulators with stressed beams |
US8111368B2 (en) * | 2006-02-28 | 2012-02-07 | Hewlett-Packard Development Company, L.P. | Liquid crystal display |
US20070206142A1 (en) * | 2006-03-03 | 2007-09-06 | Den Boer Willem | One Mask Display Backplane |
US8390301B2 (en) | 2006-03-08 | 2013-03-05 | E Ink Corporation | Electro-optic displays, and materials and methods for production thereof |
US7843624B2 (en) | 2006-03-08 | 2010-11-30 | E Ink Corporation | Electro-optic displays, and materials and methods for production thereof |
TWI350793B (en) * | 2006-03-08 | 2011-10-21 | E Ink Corp | Methods for production of electro-optic displays |
US8610988B2 (en) | 2006-03-09 | 2013-12-17 | E Ink Corporation | Electro-optic display with edge seal |
US7952790B2 (en) | 2006-03-22 | 2011-05-31 | E Ink Corporation | Electro-optic media produced using ink jet printing |
US7876489B2 (en) | 2006-06-05 | 2011-01-25 | Pixtronix, Inc. | Display apparatus with optical cavities |
US7903319B2 (en) * | 2006-07-11 | 2011-03-08 | E Ink Corporation | Electrophoretic medium and display with improved image stability |
US8018640B2 (en) | 2006-07-13 | 2011-09-13 | E Ink Corporation | Particles for use in electrophoretic displays |
US20080024429A1 (en) * | 2006-07-25 | 2008-01-31 | E Ink Corporation | Electrophoretic displays using gaseous fluids |
US7477444B2 (en) | 2006-09-22 | 2009-01-13 | E Ink Corporation & Air Products And Chemical, Inc. | Electro-optic display and materials for use therein |
US7986450B2 (en) | 2006-09-22 | 2011-07-26 | E Ink Corporation | Electro-optic display and materials for use therein |
EP2080045A1 (en) | 2006-10-20 | 2009-07-22 | Pixtronix Inc. | Light guides and backlight systems incorporating light redirectors at varying densities |
US7649666B2 (en) | 2006-12-07 | 2010-01-19 | E Ink Corporation | Components and methods for use in electro-optic displays |
US7852546B2 (en) | 2007-10-19 | 2010-12-14 | Pixtronix, Inc. | Spacers for maintaining display apparatus alignment |
US9176318B2 (en) | 2007-05-18 | 2015-11-03 | Pixtronix, Inc. | Methods for manufacturing fluid-filled MEMS displays |
US7688497B2 (en) | 2007-01-22 | 2010-03-30 | E Ink Corporation | Multi-layer sheet for use in electro-optic displays |
US7667886B2 (en) | 2007-01-22 | 2010-02-23 | E Ink Corporation | Multi-layer sheet for use in electro-optic displays |
KR20090125087A (en) * | 2007-02-20 | 2009-12-03 | 퀄컴 엠이엠스 테크놀로지스, 인크. | Equipment and methods for etching of mems |
US7826129B2 (en) | 2007-03-06 | 2010-11-02 | E Ink Corporation | Materials for use in electrophoretic displays |
US10319313B2 (en) | 2007-05-21 | 2019-06-11 | E Ink Corporation | Methods for driving video electro-optic displays |
US9199441B2 (en) * | 2007-06-28 | 2015-12-01 | E Ink Corporation | Processes for the production of electro-optic displays, and color filters for use therein |
WO2009006248A1 (en) | 2007-06-29 | 2009-01-08 | E Ink Corporation | Electro-optic displays, and materials and methods for production thereof |
US8902153B2 (en) | 2007-08-03 | 2014-12-02 | E Ink Corporation | Electro-optic displays, and processes for their production |
KR20100061731A (en) * | 2007-09-14 | 2010-06-08 | 퀄컴 엠이엠스 테크놀로지스, 인크. | Etching processes used in mems production |
CN101398532B (en) * | 2007-09-28 | 2010-09-29 | 群康科技(深圳)有限公司 | Electrowetting display |
JP4518200B2 (en) * | 2007-11-09 | 2010-08-04 | セイコーエプソン株式会社 | Active matrix device, switching element manufacturing method, electro-optical display device, and electronic apparatus |
JP4492677B2 (en) * | 2007-11-09 | 2010-06-30 | セイコーエプソン株式会社 | Active matrix device, electro-optical display device, and electronic apparatus |
US20090122389A1 (en) | 2007-11-14 | 2009-05-14 | E Ink Corporation | Electro-optic assemblies, and adhesives and binders for use therein |
WO2009117730A1 (en) | 2008-03-21 | 2009-09-24 | E Ink Corporation | Electro-optic displays and color filters |
JP5904791B2 (en) | 2008-04-11 | 2016-04-20 | イー インク コーポレイション | Method for driving an electro-optic display |
US8248560B2 (en) | 2008-04-18 | 2012-08-21 | Pixtronix, Inc. | Light guides and backlight systems incorporating prismatic structures and light redirectors |
US8169679B2 (en) | 2008-10-27 | 2012-05-01 | Pixtronix, Inc. | MEMS anchors |
TWI484273B (en) | 2009-02-09 | 2015-05-11 | E Ink Corp | Electrophoretic particles |
US8098418B2 (en) | 2009-03-03 | 2012-01-17 | E. Ink Corporation | Electro-optic displays, and color filters for use therein |
JP5381217B2 (en) * | 2009-03-25 | 2014-01-08 | セイコーエプソン株式会社 | Electro-optical device and electronic apparatus |
JP5381216B2 (en) * | 2009-03-25 | 2014-01-08 | セイコーエプソン株式会社 | Electro-optical device and electronic apparatus |
TWI400510B (en) | 2009-07-08 | 2013-07-01 | Prime View Int Co Ltd | Mems array substrate and display device using the same |
CN101957532B (en) * | 2009-07-20 | 2012-10-03 | 元太科技工业股份有限公司 | Display device and micro electro mechanical system (MEMS) array substrate thereof |
CN101995689A (en) * | 2009-08-11 | 2011-03-30 | 江苏丽恒电子有限公司 | Switch array and display array of display device |
JP5444948B2 (en) * | 2009-08-26 | 2014-03-19 | セイコーエプソン株式会社 | Electro-optic device |
US9390661B2 (en) | 2009-09-15 | 2016-07-12 | E Ink California, Llc | Display controller system |
US8754859B2 (en) | 2009-10-28 | 2014-06-17 | E Ink Corporation | Electro-optic displays with touch sensors and/or tactile feedback |
US8654436B1 (en) | 2009-10-30 | 2014-02-18 | E Ink Corporation | Particles for use in electrophoretic displays |
KR20110073873A (en) * | 2009-12-24 | 2011-06-30 | 엘지이노텍 주식회사 | Pattern-roll and pattern forming device using the same |
WO2011097258A1 (en) | 2010-02-02 | 2011-08-11 | Pixtronix, Inc. | Circuits for controlling display apparatus |
KR20120132680A (en) | 2010-02-02 | 2012-12-07 | 픽스트로닉스 인코포레이티드 | Methods for manufacturing cold seal fluid-filled display apparatus |
US9620066B2 (en) | 2010-02-02 | 2017-04-11 | E Ink Corporation | Method for driving electro-optic displays |
EP2553522B1 (en) | 2010-04-02 | 2016-03-23 | E-Ink Corporation | Electrophoretic media |
CN105654889B (en) | 2010-04-09 | 2022-01-11 | 伊英克公司 | Method for driving electro-optic display |
TWI484275B (en) | 2010-05-21 | 2015-05-11 | E Ink Corp | Electro-optic display, method for driving the same and microcavity electrophoretic display |
EP2656134A1 (en) | 2010-12-20 | 2013-10-30 | Pixtronix, Inc. | Systems and methods for mems light modulator arrays with reduced acoustic emission |
US20130125910A1 (en) | 2011-11-18 | 2013-05-23 | Avon Products, Inc. | Use of Electrophoretic Microcapsules in a Cosmetic Composition |
US11030936B2 (en) | 2012-02-01 | 2021-06-08 | E Ink Corporation | Methods and apparatus for operating an electro-optic display in white mode |
CA2863425C (en) | 2012-02-01 | 2021-02-16 | E Ink Corporation | Methods for driving electro-optic displays |
US11467466B2 (en) | 2012-04-20 | 2022-10-11 | E Ink Corporation | Illumination systems for reflective displays |
US10190743B2 (en) | 2012-04-20 | 2019-01-29 | E Ink Corporation | Illumination systems for reflective displays |
JP5926446B2 (en) * | 2012-05-02 | 2016-05-25 | エプコス アクチエンゲゼルシャフトEpcos Ag | MEMS microphone assembly and method of manufacturing MEMS microphone assembly |
US9513743B2 (en) | 2012-06-01 | 2016-12-06 | E Ink Corporation | Methods for driving electro-optic displays |
US10282033B2 (en) | 2012-06-01 | 2019-05-07 | E Ink Corporation | Methods for updating electro-optic displays when drawing or writing on the display |
US9229255B2 (en) * | 2012-08-22 | 2016-01-05 | Shenzhen China Star Optoelectronics Technology Co., Ltd. | Manufacturing method of liquid crystal panel |
US11017705B2 (en) | 2012-10-02 | 2021-05-25 | E Ink California, Llc | Color display device including multiple pixels for driving three-particle electrophoretic media |
US9360733B2 (en) | 2012-10-02 | 2016-06-07 | E Ink California, Llc | Color display device |
US10037735B2 (en) | 2012-11-16 | 2018-07-31 | E Ink Corporation | Active matrix display with dual driving modes |
US9726957B2 (en) | 2013-01-10 | 2017-08-08 | E Ink Corporation | Electro-optic display with controlled electrochemical reactions |
US9715155B1 (en) | 2013-01-10 | 2017-07-25 | E Ink Corporation | Electrode structures for electro-optic displays |
US9170421B2 (en) | 2013-02-05 | 2015-10-27 | Pixtronix, Inc. | Display apparatus incorporating multi-level shutters |
US9721495B2 (en) | 2013-02-27 | 2017-08-01 | E Ink Corporation | Methods for driving electro-optic displays |
CN105190740B (en) | 2013-03-01 | 2020-07-10 | 伊英克公司 | Method for driving electro-optic display |
US9134552B2 (en) | 2013-03-13 | 2015-09-15 | Pixtronix, Inc. | Display apparatus with narrow gap electrostatic actuators |
TWI554814B (en) | 2013-05-14 | 2016-10-21 | 電子墨水股份有限公司 | Colored electrophoretic displays |
US9620048B2 (en) | 2013-07-30 | 2017-04-11 | E Ink Corporation | Methods for driving electro-optic displays |
ES2946753T3 (en) | 2013-07-31 | 2023-07-25 | E Ink Corp | Methods for driving electro-optical displays |
JP5761293B2 (en) * | 2013-10-02 | 2015-08-12 | セイコーエプソン株式会社 | Electro-optical device and electronic apparatus |
US10380931B2 (en) | 2013-10-07 | 2019-08-13 | E Ink California, Llc | Driving methods for color display device |
US10726760B2 (en) | 2013-10-07 | 2020-07-28 | E Ink California, Llc | Driving methods to produce a mixed color state for an electrophoretic display |
TWI550332B (en) | 2013-10-07 | 2016-09-21 | 電子墨水加利福尼亞有限責任公司 | Driving methods for color display device |
KR102023860B1 (en) | 2014-01-17 | 2019-09-20 | 이 잉크 코포레이션 | Electro-optic display with a two-phase electrode layer |
KR20160119195A (en) | 2014-02-07 | 2016-10-12 | 이 잉크 코포레이션 | Electro-optic display backplane structures |
US10317767B2 (en) | 2014-02-07 | 2019-06-11 | E Ink Corporation | Electro-optic display backplane structure with drive components and pixel electrodes on opposed surfaces |
US10446585B2 (en) | 2014-03-17 | 2019-10-15 | E Ink Corporation | Multi-layer expanding electrode structures for backplane assemblies |
US9919553B2 (en) | 2014-09-02 | 2018-03-20 | E Ink California, Llc | Embossing tool and methods of preparation |
KR102061435B1 (en) | 2014-09-10 | 2019-12-31 | 이 잉크 코포레이션 | Colored electrophoretic displays |
US10657869B2 (en) | 2014-09-10 | 2020-05-19 | E Ink Corporation | Methods for driving color electrophoretic displays |
KR102229488B1 (en) | 2014-09-26 | 2021-03-17 | 이 잉크 코포레이션 | Color sets for low resolution dithering in reflective color displays |
CA2963561A1 (en) | 2014-11-07 | 2016-05-12 | E Ink Corporation | Applications of electro-optic displays |
US10197883B2 (en) | 2015-01-05 | 2019-02-05 | E Ink Corporation | Electro-optic displays, and methods for driving same |
KR102046289B1 (en) | 2015-01-05 | 2019-12-02 | 이 잉크 코포레이션 | Electro-optic displays, and methods for driving same |
US9835925B1 (en) | 2015-01-08 | 2017-12-05 | E Ink Corporation | Electro-optic displays, and processes for the production thereof |
JP6567078B2 (en) * | 2015-01-12 | 2019-08-28 | ドルビー ラボラトリーズ ライセンシング コーポレイション | Pixel tile structure and layout |
CN107111990B (en) | 2015-01-30 | 2020-03-17 | 伊英克公司 | Font control for electro-optic displays and related devices and methods |
EP3254275B1 (en) * | 2015-02-04 | 2023-07-12 | E Ink Corporation | Electro-optic displays displaying in dark mode and light mode, and related apparatus and methods |
WO2016126771A1 (en) | 2015-02-04 | 2016-08-11 | E Ink Corporation | Electro-optic displays with reduced remnant voltage, and related apparatus and methods |
CN112750407B (en) | 2015-04-27 | 2023-11-07 | 伊英克公司 | Electro-optic display |
US10997930B2 (en) | 2015-05-27 | 2021-05-04 | E Ink Corporation | Methods and circuitry for driving display devices |
US10040954B2 (en) | 2015-05-28 | 2018-08-07 | E Ink California, Llc | Electrophoretic medium comprising a mixture of charge control agents |
JP6524271B2 (en) | 2015-06-29 | 2019-06-05 | イー インク コーポレイション | Method for mechanical and electrical connection to display electrodes |
US11087644B2 (en) | 2015-08-19 | 2021-08-10 | E Ink Corporation | Displays intended for use in architectural applications |
US10388233B2 (en) | 2015-08-31 | 2019-08-20 | E Ink Corporation | Devices and techniques for electronically erasing a drawing device |
JP6871241B2 (en) | 2015-09-16 | 2021-05-12 | イー インク コーポレイション | Devices and methods for driving displays |
US10803813B2 (en) | 2015-09-16 | 2020-10-13 | E Ink Corporation | Apparatus and methods for driving displays |
US11657774B2 (en) | 2015-09-16 | 2023-05-23 | E Ink Corporation | Apparatus and methods for driving displays |
PT3359622T (en) | 2015-10-06 | 2021-03-04 | E Ink Corp | Improved low-temperature electrophoretic media |
US10062337B2 (en) | 2015-10-12 | 2018-08-28 | E Ink California, Llc | Electrophoretic display device |
CN108350279B (en) | 2015-11-11 | 2020-03-17 | 伊英克公司 | Functionalized quinacridone pigments |
KR102250640B1 (en) | 2015-11-18 | 2021-05-10 | 이 잉크 코포레이션 | Electro-optical displays |
WO2017139323A1 (en) | 2016-02-08 | 2017-08-17 | E Ink Corporation | Methods and apparatus for operating an electro-optic display in white mode |
US10593272B2 (en) | 2016-03-09 | 2020-03-17 | E Ink Corporation | Drivers providing DC-balanced refresh sequences for color electrophoretic displays |
CN113823232B (en) | 2016-03-09 | 2024-01-19 | 伊英克公司 | Method for driving electro-optic display |
EP3465628B1 (en) | 2016-05-24 | 2020-07-08 | E Ink Corporation | Method for rendering color images |
WO2017210069A1 (en) * | 2016-05-31 | 2017-12-07 | E Ink Corporation | Backplanes for electro-optic displays |
US10324577B2 (en) | 2017-02-28 | 2019-06-18 | E Ink Corporation | Writeable electrophoretic displays including sensing circuits and styli configured to interact with sensing circuits |
RU2754814C2 (en) | 2017-03-03 | 2021-09-07 | Е Инк Корпорэйшн | Electrical-optical displays and their switching methods |
CN110392911B (en) | 2017-03-06 | 2021-09-24 | 伊英克公司 | Method and apparatus for presenting color image |
US10444592B2 (en) | 2017-03-09 | 2019-10-15 | E Ink Corporation | Methods and systems for transforming RGB image data to a reduced color set for electro-optic displays |
EP3602193A4 (en) | 2017-03-28 | 2021-01-06 | E Ink Corporation | Porous backplane for electro-optic display |
KR102531228B1 (en) | 2017-04-04 | 2023-05-10 | 이 잉크 코포레이션 | Methods for driving electro-optic displays |
CN110622102B (en) | 2017-05-19 | 2021-04-13 | 伊英克公司 | Foldable electro-optic display including digitization and touch sensing |
TWI752233B (en) | 2017-05-30 | 2022-01-11 | 美商電子墨水股份有限公司 | Electro-optic displays and method for discharging remnant voltage from an electro-optic display |
US11404013B2 (en) | 2017-05-30 | 2022-08-02 | E Ink Corporation | Electro-optic displays with resistors for discharging remnant charges |
CN109390372B (en) * | 2017-08-08 | 2021-11-16 | 合肥视涯技术有限公司 | Pixel structure, forming method thereof and display screen |
US11721295B2 (en) | 2017-09-12 | 2023-08-08 | E Ink Corporation | Electro-optic displays, and methods for driving same |
CN111133501A (en) | 2017-09-12 | 2020-05-08 | 伊英克公司 | Method for driving electro-optic display |
TWI691361B (en) | 2017-10-18 | 2020-04-21 | 美商電子墨水股份有限公司 | Digital microfluidic devices including dual substrates with thin-film transistors and capacitive sensing |
US10824042B1 (en) | 2017-10-27 | 2020-11-03 | E Ink Corporation | Electro-optic display and composite materials having low thermal sensitivity for use therein |
EP3704537B1 (en) | 2017-11-03 | 2022-11-02 | E Ink Corporation | Processes for producing electro-optic displays |
CN116243504A (en) | 2017-12-19 | 2023-06-09 | 伊英克公司 | Application of electro-optic display |
WO2019126623A1 (en) | 2017-12-22 | 2019-06-27 | E Ink Corporation | Electro-optic displays, and methods for driving same |
CN111615724B (en) | 2018-01-22 | 2023-01-31 | 伊英克公司 | Electro-optic display and method for driving an electro-optic display |
WO2019160841A1 (en) | 2018-02-15 | 2019-08-22 | E Ink Corporation | Via placement for slim border electro-optic display backplanes with decreased capacitive coupling between t-wires and pixel electrodes |
US11175561B1 (en) | 2018-04-12 | 2021-11-16 | E Ink Corporation | Electrophoretic display media with network electrodes and methods of making and using the same |
KR102609672B1 (en) | 2018-07-17 | 2023-12-05 | 이 잉크 코포레이션 | Electro-optical displays and driving methods |
US11397366B2 (en) | 2018-08-10 | 2022-07-26 | E Ink California, Llc | Switchable light-collimating layer including bistable electrophoretic fluid |
CN112470066A (en) | 2018-08-10 | 2021-03-09 | 伊英克加利福尼亚有限责任公司 | Drive waveform for switchable light collimating layer comprising a bistable electrophoretic fluid |
WO2020033789A1 (en) | 2018-08-10 | 2020-02-13 | E Ink California, Llc | Switchable light-collimating layer with reflector |
US11353759B2 (en) | 2018-09-17 | 2022-06-07 | Nuclera Nucleics Ltd. | Backplanes with hexagonal and triangular electrodes |
CN112839700B (en) | 2018-10-15 | 2023-05-02 | 伊英克公司 | Digital micro-fluidic conveying device |
JP7250921B2 (en) | 2018-11-09 | 2023-04-03 | イー インク コーポレイション | electro-optic display |
KR102542696B1 (en) | 2018-11-30 | 2023-06-13 | 이 잉크 캘리포니아 엘엘씨 | Electro-optical displays and driving methods |
WO2020122917A1 (en) | 2018-12-13 | 2020-06-18 | E Ink Corporation | Illumination systems for reflective displays |
TWI728631B (en) | 2018-12-28 | 2021-05-21 | 美商電子墨水股份有限公司 | Electro-optic displays |
EP3903303A4 (en) | 2018-12-30 | 2022-09-07 | E Ink California, LLC | Electro-optic displays |
US11460722B2 (en) | 2019-05-10 | 2022-10-04 | E Ink Corporation | Colored electrophoretic displays |
WO2021097179A1 (en) | 2019-11-14 | 2021-05-20 | E Ink Corporation | Methods for driving electro-optic displays |
US11257445B2 (en) | 2019-11-18 | 2022-02-22 | E Ink Corporation | Methods for driving electro-optic displays |
EP4100791A4 (en) | 2020-02-07 | 2024-03-06 | E Ink Corp | Electrophoretic display layer with thin film top electrode |
EP4158614A1 (en) | 2020-05-31 | 2023-04-05 | E Ink Corporation | Electro-optic displays, and methods for driving same |
WO2021247470A1 (en) | 2020-06-03 | 2021-12-09 | E Ink Corporation | Foldable electrophoretic display module including non-conductive support plate |
CA3177451A1 (en) | 2020-06-11 | 2021-12-16 | E Ink Corporation | Electro-optic displays, and methods for driving same |
US11846863B2 (en) | 2020-09-15 | 2023-12-19 | E Ink Corporation | Coordinated top electrode—drive electrode voltages for switching optical state of electrophoretic displays using positive and negative voltages of different magnitudes |
JP2023541267A (en) | 2020-09-15 | 2023-09-29 | イー インク コーポレイション | Improved drive voltages for advanced color electrophoretic displays and displays with improved drive voltages |
CN116157727A (en) | 2020-09-15 | 2023-05-23 | 伊英克公司 | Four-particle electrophoretic medium providing fast, high contrast optical state switching |
CN116097343A (en) | 2020-10-01 | 2023-05-09 | 伊英克公司 | Electro-optic display and method for driving an electro-optic display |
JP2023545278A (en) | 2020-11-02 | 2023-10-27 | イー インク コーポレイション | Driving sequence for removing previous state information from color electrophoretic displays |
KR20240025039A (en) | 2020-11-02 | 2024-02-26 | 이 잉크 코포레이션 | Method and apparatus for rendering color images |
US11620959B2 (en) | 2020-11-02 | 2023-04-04 | E Ink Corporation | Enhanced push-pull (EPP) waveforms for achieving primary color sets in multi-color electrophoretic displays |
EP4260312A1 (en) | 2020-12-08 | 2023-10-18 | E Ink Corporation | Methods for driving electro-optic displays |
CN113327924B (en) * | 2021-05-25 | 2024-04-12 | 北京京东方技术开发有限公司 | Semiconductor device, display substrate and display device |
US11935495B2 (en) | 2021-08-18 | 2024-03-19 | E Ink Corporation | Methods for driving electro-optic displays |
WO2023043714A1 (en) | 2021-09-14 | 2023-03-23 | E Ink Corporation | Coordinated top electrode - drive electrode voltages for switching optical state of electrophoretic displays using positive and negative voltages of different magnitudes |
US11830448B2 (en) | 2021-11-04 | 2023-11-28 | E Ink Corporation | Methods for driving electro-optic displays |
WO2023081410A1 (en) | 2021-11-05 | 2023-05-11 | E Ink Corporation | Multi-primary display mask-based dithering with low blooming sensitivity |
US20230197024A1 (en) | 2021-12-22 | 2023-06-22 | E Ink Corporation | Methods for driving electro-optic displays |
US11922893B2 (en) | 2021-12-22 | 2024-03-05 | E Ink Corporation | High voltage driving using top plane switching with zero voltage frames between driving frames |
US11854448B2 (en) | 2021-12-27 | 2023-12-26 | E Ink Corporation | Methods for measuring electrical properties of electro-optic displays |
WO2023129692A1 (en) | 2021-12-30 | 2023-07-06 | E Ink California, Llc | Methods for driving electro-optic displays |
WO2023132958A1 (en) | 2022-01-04 | 2023-07-13 | E Ink Corporation | Electrophoretic media comprising electrophoretic particles and a combination of charge control agents |
TW202349091A (en) | 2022-02-25 | 2023-12-16 | 美商電子墨水股份有限公司 | Electro-optic displays with edge seal components and methods of making the same |
US11830449B2 (en) | 2022-03-01 | 2023-11-28 | E Ink Corporation | Electro-optic displays |
WO2023211867A1 (en) | 2022-04-27 | 2023-11-02 | E Ink Corporation | Color displays configured to convert rgb image data for display on advanced color electronic paper |
US20230350263A1 (en) | 2022-04-27 | 2023-11-02 | E Ink Corporation | Electro-optic display stacks with segmented electrodes and methods of making the same |
WO2024044119A1 (en) | 2022-08-25 | 2024-02-29 | E Ink Corporation | Transitional driving modes for impulse balancing when switching between global color mode and direct update mode for electrophoretic displays |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4681403A (en) * | 1981-07-16 | 1987-07-21 | U.S. Philips Corporation | Display device with micromechanical leaf spring switches |
US5638946A (en) * | 1996-01-11 | 1997-06-17 | Northeastern University | Micromechanical switch with insulated switch contact |
US20020018042A1 (en) * | 1997-08-28 | 2002-02-14 | Albert Jonathan D. | Rear electrode structures for displays |
US6392618B1 (en) * | 1998-07-17 | 2002-05-21 | Fuji Photo Film Co., Ltd. | Active matrix device, and display apparatus |
Family Cites Families (139)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
NL7005615A (en) | 1969-04-23 | 1970-10-27 | ||
US3870517A (en) | 1969-10-18 | 1975-03-11 | Matsushita Electric Ind Co Ltd | Color image reproduction sheet employed in photoelectrophoretic imaging |
US3668106A (en) | 1970-04-09 | 1972-06-06 | Matsushita Electric Ind Co Ltd | Electrophoretic display device |
US3767392A (en) | 1970-04-15 | 1973-10-23 | Matsushita Electric Ind Co Ltd | Electrophoretic light image reproduction process |
US3792308A (en) | 1970-06-08 | 1974-02-12 | Matsushita Electric Ind Co Ltd | Electrophoretic display device of the luminescent type |
JPS4917079B1 (en) | 1970-12-21 | 1974-04-26 | ||
US4336536A (en) | 1979-12-17 | 1982-06-22 | Kalt Charles G | Reflective display and method of making same |
US4418346A (en) | 1981-05-20 | 1983-11-29 | Batchelder J Samuel | Method and apparatus for providing a dielectrophoretic display of visual information |
US5123847A (en) * | 1983-05-11 | 1992-06-23 | Holmberg Scott H | Method of manufacturing flat panel backplanes, display transistors |
US4820222A (en) * | 1986-12-31 | 1989-04-11 | Alphasil, Inc. | Method of manufacturing flat panel backplanes including improved testing and yields thereof and displays made thereby |
US5233459A (en) | 1991-03-06 | 1993-08-03 | Massachusetts Institute Of Technology | Electric display device |
JPH0580530A (en) * | 1991-09-24 | 1993-04-02 | Hitachi Ltd | Production of thin film pattern |
KR950010659B1 (en) | 1992-11-10 | 1995-09-21 | 재단법인한국전자통신연구소 | Micro light shutter and manufacturing method thereof |
JPH07195514A (en) * | 1993-12-29 | 1995-08-01 | Japan Vilene Co Ltd | Apparatus and method for producing floor mat having plane tip projection group |
US5745094A (en) | 1994-12-28 | 1998-04-28 | International Business Machines Corporation | Electrophoretic display |
US6137467A (en) | 1995-01-03 | 2000-10-24 | Xerox Corporation | Optically sensitive electric paper |
US5784190A (en) | 1995-04-27 | 1998-07-21 | John M. Baker | Electro-micro-mechanical shutters on transparent substrates |
US6866760B2 (en) * | 1998-08-27 | 2005-03-15 | E Ink Corporation | Electrophoretic medium and process for the production thereof |
US7259744B2 (en) * | 1995-07-20 | 2007-08-21 | E Ink Corporation | Dielectrophoretic displays |
US7071913B2 (en) * | 1995-07-20 | 2006-07-04 | E Ink Corporation | Retroreflective electrophoretic displays and materials for making the same |
US6120839A (en) | 1995-07-20 | 2000-09-19 | E Ink Corporation | Electro-osmotic displays and materials for making the same |
US6262706B1 (en) | 1995-07-20 | 2001-07-17 | E Ink Corporation | Retroreflective electrophoretic displays and materials for making the same |
US6017584A (en) | 1995-07-20 | 2000-01-25 | E Ink Corporation | Multi-color electrophoretic displays and materials for making the same |
US6459418B1 (en) | 1995-07-20 | 2002-10-01 | E Ink Corporation | Displays combining active and non-active inks |
US6515649B1 (en) | 1995-07-20 | 2003-02-04 | E Ink Corporation | Suspended particle displays and materials for making the same |
US6120588A (en) | 1996-07-19 | 2000-09-19 | E Ink Corporation | Electronically addressable microencapsulated ink and display thereof |
US6710540B1 (en) | 1995-07-20 | 2004-03-23 | E Ink Corporation | Electrostatically-addressable electrophoretic display |
US6118426A (en) | 1995-07-20 | 2000-09-12 | E Ink Corporation | Transducers and indicators having printed displays |
US6639578B1 (en) | 1995-07-20 | 2003-10-28 | E Ink Corporation | Flexible displays |
US6124851A (en) | 1995-07-20 | 2000-09-26 | E Ink Corporation | Electronic book with multiple page displays |
US7106296B1 (en) | 1995-07-20 | 2006-09-12 | E Ink Corporation | Electronic book with multiple page displays |
US6727881B1 (en) | 1995-07-20 | 2004-04-27 | E Ink Corporation | Encapsulated electrophoretic displays and methods and materials for making the same |
US6664944B1 (en) | 1995-07-20 | 2003-12-16 | E-Ink Corporation | Rear electrode structures for electrophoretic displays |
US6482742B1 (en) * | 2000-07-18 | 2002-11-19 | Stephen Y. Chou | Fluid pressure imprint lithography |
US5760761A (en) | 1995-12-15 | 1998-06-02 | Xerox Corporation | Highlight color twisting ball display |
US5808783A (en) | 1996-06-27 | 1998-09-15 | Xerox Corporation | High reflectance gyricon display |
US6055091A (en) | 1996-06-27 | 2000-04-25 | Xerox Corporation | Twisting-cylinder display |
US6538801B2 (en) | 1996-07-19 | 2003-03-25 | E Ink Corporation | Electrophoretic displays using nanoparticles |
US6323989B1 (en) | 1996-07-19 | 2001-11-27 | E Ink Corporation | Electrophoretic displays using nanoparticles |
US6721083B2 (en) | 1996-07-19 | 2004-04-13 | E Ink Corporation | Electrophoretic displays using nanoparticles |
JP3617200B2 (en) * | 1996-07-31 | 2005-02-02 | 住友電気工業株式会社 | Manufacturing method of mold for manufacturing microstructure and manufacturing method of microstructure |
JPH10135479A (en) * | 1996-09-03 | 1998-05-22 | Toshiba Corp | Thin film transistor array and image display device using it |
JPH1096808A (en) * | 1996-09-24 | 1998-04-14 | Nippon Telegr & Teleph Corp <Ntt> | Formation of fine pattern |
US5930026A (en) | 1996-10-25 | 1999-07-27 | Massachusetts Institute Of Technology | Nonemissive displays and piezoelectric power supplies therefor |
US5777782A (en) | 1996-12-24 | 1998-07-07 | Xerox Corporation | Auxiliary optics for a twisting ball display |
WO1998035267A1 (en) | 1997-02-06 | 1998-08-13 | University College Dublin | Electrochromic system |
US5961804A (en) | 1997-03-18 | 1999-10-05 | Massachusetts Institute Of Technology | Microencapsulated electrophoretic display |
US6980196B1 (en) | 1997-03-18 | 2005-12-27 | Massachusetts Institute Of Technology | Printable electronic display |
US6109717A (en) * | 1997-05-13 | 2000-08-29 | Sarnoff Corporation | Multi-element fluid delivery apparatus and methods |
WO1999010769A1 (en) * | 1997-08-28 | 1999-03-04 | E-Ink Corporation | Applications for encapsulated electrophoretic displays |
US6067185A (en) | 1997-08-28 | 2000-05-23 | E Ink Corporation | Process for creating an encapsulated electrophoretic display |
US6300932B1 (en) | 1997-08-28 | 2001-10-09 | E Ink Corporation | Electrophoretic displays with luminescent particles and materials for making the same |
US6177921B1 (en) | 1997-08-28 | 2001-01-23 | E Ink Corporation | Printable electrode structures for displays |
US6825829B1 (en) | 1997-08-28 | 2004-11-30 | E Ink Corporation | Adhesive backed displays |
US6252564B1 (en) | 1997-08-28 | 2001-06-26 | E Ink Corporation | Tiled displays |
US6839158B2 (en) | 1997-08-28 | 2005-01-04 | E Ink Corporation | Encapsulated electrophoretic displays having a monolayer of capsules and materials and methods for making the same |
US6057084A (en) * | 1997-10-03 | 2000-05-02 | Fusion Systems Corporation | Controlled amine poisoning for reduced shrinkage of features formed in photoresist |
US6054071A (en) | 1998-01-28 | 2000-04-25 | Xerox Corporation | Poled electrets for gyricon-based electric-paper displays |
JPH11259910A (en) * | 1998-03-13 | 1999-09-24 | Toshiba Corp | Optical disk and production of its master disk |
US6445489B1 (en) | 1998-03-18 | 2002-09-03 | E Ink Corporation | Electrophoretic displays and systems for addressing such displays |
US6753999B2 (en) | 1998-03-18 | 2004-06-22 | E Ink Corporation | Electrophoretic displays in portable devices and systems for addressing such displays |
US6704133B2 (en) | 1998-03-18 | 2004-03-09 | E-Ink Corporation | Electro-optic display overlays and systems for addressing such displays |
JP4664501B2 (en) | 1998-04-10 | 2011-04-06 | イー インク コーポレイション | Electronic display using organic field effect transistors |
US7075502B1 (en) * | 1998-04-10 | 2006-07-11 | E Ink Corporation | Full color reflective display with multichromatic sub-pixels |
AU3767899A (en) | 1998-04-27 | 1999-11-16 | E-Ink Corporation | Shutter mode microencapsulated electrophoretic display |
WO1999059101A2 (en) | 1998-05-12 | 1999-11-18 | E-Ink Corporation | Microencapsulated electrophoretic electrostatically-addressed media for drawing device applications |
US6241921B1 (en) | 1998-05-15 | 2001-06-05 | Massachusetts Institute Of Technology | Heterogeneous display elements and methods for their fabrication |
CA2333358A1 (en) | 1998-06-22 | 1999-12-29 | E Ink Corporation | Means of addressing microencapsulated display media |
AU5094699A (en) * | 1998-07-08 | 2000-02-01 | E-Ink Corporation | Methods for achieving improved color in microencapsulated electrophoretic devices |
WO2000003349A1 (en) | 1998-07-08 | 2000-01-20 | E Ink Corporation | Method and apparatus for sensing the state of an electrophoretic display |
US20030102858A1 (en) * | 1998-07-08 | 2003-06-05 | E Ink Corporation | Method and apparatus for determining properties of an electrophoretic display |
USD485294S1 (en) | 1998-07-22 | 2004-01-13 | E Ink Corporation | Electrode structure for an electronic display |
US7256766B2 (en) * | 1998-08-27 | 2007-08-14 | E Ink Corporation | Electrophoretic display comprising optical biasing element |
US6225971B1 (en) | 1998-09-16 | 2001-05-01 | International Business Machines Corporation | Reflective electrophoretic display with laterally adjacent color cells using an absorbing panel |
US6144361A (en) | 1998-09-16 | 2000-11-07 | International Business Machines Corporation | Transmissive electrophoretic display with vertical electrodes |
US6184856B1 (en) | 1998-09-16 | 2001-02-06 | International Business Machines Corporation | Transmissive electrophoretic display with laterally adjacent color cells |
US6271823B1 (en) | 1998-09-16 | 2001-08-07 | International Business Machines Corporation | Reflective electrophoretic display with laterally adjacent color cells using a reflective panel |
AU6293499A (en) | 1998-10-07 | 2000-04-26 | E-Ink Corporation | Capsules for electrophoretic displays and methods for making the same |
CA2346167C (en) | 1998-10-07 | 2007-05-22 | E Ink Corporation | Illumination system for nonemissive electronic displays |
US6128124A (en) | 1998-10-16 | 2000-10-03 | Xerox Corporation | Additive color electric paper without registration or alignment of individual elements |
CA2347866A1 (en) * | 1998-11-02 | 2000-05-11 | Russell J. Wilcox | Broadcast system for display devices made of electronic ink |
US6147791A (en) | 1998-11-25 | 2000-11-14 | Xerox Corporation | Gyricon displays utilizing rotating elements and magnetic latching |
US6097531A (en) | 1998-11-25 | 2000-08-01 | Xerox Corporation | Method of making uniformly magnetized elements for a gyricon display |
US6312304B1 (en) | 1998-12-15 | 2001-11-06 | E Ink Corporation | Assembly of microencapsulated electronic displays |
US6506438B2 (en) | 1998-12-15 | 2003-01-14 | E Ink Corporation | Method for printing of transistor arrays on plastic substrates |
US6724519B1 (en) | 1998-12-21 | 2004-04-20 | E-Ink Corporation | Protective electrodes for electrophoretic displays |
US6200728B1 (en) * | 1999-02-20 | 2001-03-13 | Shipley Company, L.L.C. | Photoresist compositions comprising blends of photoacid generators |
JP2000349301A (en) * | 1999-04-01 | 2000-12-15 | Semiconductor Energy Lab Co Ltd | Semiconductor device and its manufacture |
US6327072B1 (en) | 1999-04-06 | 2001-12-04 | E Ink Corporation | Microcell electrophoretic displays |
AU4202100A (en) | 1999-04-06 | 2000-10-23 | E-Ink Corporation | Methods for producing droplets for use in capsule-based electrophoretic displays |
US6498114B1 (en) | 1999-04-09 | 2002-12-24 | E Ink Corporation | Method for forming a patterned semiconductor film |
US6842657B1 (en) * | 1999-04-09 | 2005-01-11 | E Ink Corporation | Reactive formation of dielectric layers and protection of organic layers in organic semiconductor device fabrication |
US6504524B1 (en) | 2000-03-08 | 2003-01-07 | E Ink Corporation | Addressing methods for displays having zero time-average field |
US7012600B2 (en) * | 1999-04-30 | 2006-03-14 | E Ink Corporation | Methods for driving bistable electro-optic displays, and apparatus for use therein |
US6531997B1 (en) | 1999-04-30 | 2003-03-11 | E Ink Corporation | Methods for addressing electrophoretic displays |
US7038655B2 (en) * | 1999-05-03 | 2006-05-02 | E Ink Corporation | Electrophoretic ink composed of particles with field dependent mobilities |
US6693620B1 (en) | 1999-05-03 | 2004-02-17 | E Ink Corporation | Threshold addressing of electrophoretic displays |
DE60045738D1 (en) | 1999-07-01 | 2011-04-28 | E Ink Corp | ELECTROPHORETIC MEDIA PROVIDE SPACING ELEMENTS |
WO2001008242A1 (en) | 1999-07-21 | 2001-02-01 | E Ink Corporation | Preferred methods for producing electrical circuit elements used to control an electronic display |
WO2001017040A1 (en) | 1999-08-31 | 2001-03-08 | E Ink Corporation | A solvent annealing process for forming a thin semiconductor film with advantageous properties |
EP1208603A1 (en) | 1999-08-31 | 2002-05-29 | E Ink Corporation | Transistor for an electronically driven display |
US6672921B1 (en) | 2000-03-03 | 2004-01-06 | Sipix Imaging, Inc. | Manufacturing process for electrophoretic display |
JP3604985B2 (en) * | 2000-01-18 | 2004-12-22 | 株式会社石川製作所 | Pattern transfer device |
US6788449B2 (en) | 2000-03-03 | 2004-09-07 | Sipix Imaging, Inc. | Electrophoretic display and novel process for its manufacture |
US7893435B2 (en) | 2000-04-18 | 2011-02-22 | E Ink Corporation | Flexible electronic circuits and displays including a backplane comprising a patterned metal foil having a plurality of apertures extending therethrough |
AU2001253575A1 (en) * | 2000-04-18 | 2001-10-30 | E-Ink Corporation | Process for fabricating thin film transistors |
US6683333B2 (en) | 2000-07-14 | 2004-01-27 | E Ink Corporation | Fabrication of electronic circuit elements using unpatterned semiconductor layers |
US6816147B2 (en) | 2000-08-17 | 2004-11-09 | E Ink Corporation | Bistable electro-optic display, and method for addressing same |
JP2002158192A (en) * | 2000-08-30 | 2002-05-31 | Ishikawa Seisakusho Ltd | Method for transferring pattern in manufacturing semiconductor device |
AU2002230520A1 (en) * | 2000-11-29 | 2002-06-11 | E-Ink Corporation | Addressing circuitry for large electronic displays |
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US7316942B2 (en) * | 2005-02-14 | 2008-01-08 | Honeywell International, Inc. | Flexible active matrix display backplane and method |
-
2003
- 2003-12-16 CN CNA2003801061534A patent/CN1726428A/en active Pending
- 2003-12-16 KR KR1020087011300A patent/KR100937613B1/en active IP Right Grant
- 2003-12-16 KR KR1020057011155A patent/KR20050086917A/en not_active Application Discontinuation
- 2003-12-16 JP JP2004563695A patent/JP2006510066A/en active Pending
- 2003-12-16 US US10/707,466 patent/US7365733B2/en not_active Expired - Fee Related
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- 2003-12-16 AU AU2003299673A patent/AU2003299673A1/en not_active Abandoned
- 2003-12-16 WO PCT/US2003/040257 patent/WO2004059378A2/en active Application Filing
-
2008
- 2008-03-12 US US12/046,489 patent/US8077141B2/en active Active
-
2009
- 2009-11-17 JP JP2009262388A patent/JP2010044420A/en active Pending
-
2011
- 2011-10-20 JP JP2011231163A patent/JP2012014204A/en not_active Withdrawn
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4681403A (en) * | 1981-07-16 | 1987-07-21 | U.S. Philips Corporation | Display device with micromechanical leaf spring switches |
US5638946A (en) * | 1996-01-11 | 1997-06-17 | Northeastern University | Micromechanical switch with insulated switch contact |
US20020018042A1 (en) * | 1997-08-28 | 2002-02-14 | Albert Jonathan D. | Rear electrode structures for displays |
US6392618B1 (en) * | 1998-07-17 | 2002-05-21 | Fuji Photo Film Co., Ltd. | Active matrix device, and display apparatus |
Non-Patent Citations (2)
Title |
---|
PETERSEN K E: "DYNAMIC MICROMECHANICS ON SILICON: TECHNIQUES AND DEVICES" IEEE TRANSACTIONS ON ELECTRON DEVICES, IEEE INC. NEW YORK, US, vol. ED-25, no. 10, 1 October 1978 (1978-10-01), pages 1241-1249, XP000572631 ISSN: 0018-9383 * |
TAKASHI NISHIO ET AL: "CHARACTERISTIC OF MICROMECHANICAL ELECTROSTATIC SWITCH FOR ACTIVE MATRIX DISPLAYS" IEICE TRANSACTIONS ON ELECTRONICS, INSTITUTE OF ELECTRONICS INFORMATION AND COMM. ENG. TOKYO, JP, vol. E78-C, no. 9, 1 September 1995 (1995-09-01), pages 1292-1297, XP000545793 ISSN: 0916-8524 * |
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US7160745B2 (en) | 2004-10-28 | 2007-01-09 | Hewlett-Packard Development Company, L.P. | Metal-insulator-metal device |
US7692195B2 (en) | 2007-11-09 | 2010-04-06 | Seiko Epson Corporation | Active-matrix device, electro-optical display device, and electronic apparatus |
US8013849B2 (en) | 2007-11-09 | 2011-09-06 | Seiko Epson Corporation | Active-matrix device, electro-optical display device, and electronic apparatus |
US8223285B2 (en) | 2007-11-09 | 2012-07-17 | Seiko Epson Corporation | Active matrix device, method for manufacturing switching element, electro-optical display device, and electronic apparatus |
Also Published As
Publication number | Publication date |
---|---|
EP1573389B1 (en) | 2018-05-30 |
AU2003299673A1 (en) | 2004-07-22 |
JP2010044420A (en) | 2010-02-25 |
CN1726428A (en) | 2006-01-25 |
US8077141B2 (en) | 2011-12-13 |
JP2006510066A (en) | 2006-03-23 |
KR20050086917A (en) | 2005-08-30 |
EP1573389A2 (en) | 2005-09-14 |
WO2004059378A3 (en) | 2004-09-23 |
US20080165122A1 (en) | 2008-07-10 |
JP2012014204A (en) | 2012-01-19 |
CN101118362A (en) | 2008-02-06 |
KR20080049144A (en) | 2008-06-03 |
US20040196215A1 (en) | 2004-10-07 |
KR100937613B1 (en) | 2010-01-20 |
US7365733B2 (en) | 2008-04-29 |
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