WO2004057060A3 - Multi-chemistry electrochemical processing system - Google Patents

Multi-chemistry electrochemical processing system Download PDF

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Publication number
WO2004057060A3
WO2004057060A3 PCT/US2003/040719 US0340719W WO2004057060A3 WO 2004057060 A3 WO2004057060 A3 WO 2004057060A3 US 0340719 W US0340719 W US 0340719W WO 2004057060 A3 WO2004057060 A3 WO 2004057060A3
Authority
WO
WIPO (PCT)
Prior art keywords
plating
processing system
chemistries
electrochemical processing
chemistry
Prior art date
Application number
PCT/US2003/040719
Other languages
French (fr)
Other versions
WO2004057060A2 (en
Inventor
Michael X Yang
Ming Xi
Russell C Ellwanger
Eric B Britcher
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Priority to JP2005502657A priority Critical patent/JP2006511717A/en
Publication of WO2004057060A2 publication Critical patent/WO2004057060A2/en
Publication of WO2004057060A3 publication Critical patent/WO2004057060A3/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
    • C25D17/001—Apparatus specially adapted for electrolytic coating of wafers, e.g. semiconductors or solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
    • H01L21/2885—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition using an external electrical current, i.e. electro-deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67161—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers
    • H01L21/67167—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers surrounding a central transfer chamber
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67207—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process
    • H01L21/6723—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process comprising at least one plating chamber
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D7/00—Electroplating characterised by the article coated
    • C25D7/12—Semiconductors
    • C25D7/123—Semiconductors first coated with a seed layer or a conductive layer

Abstract

Embodiments of the invention generally provide an electrochemical processing system configured to provide multiple chemistries for a single plating process. The multiple chemistries are generally delivered to individual plating cells positioned on the processing system. The individual chemistries may generally be used to conduct direct plating on a barrier layer, alloy plating, plating on a thin seed layer, optimized feature fill and bulk fill plating, plating with minimized defects, and/or any other plating process wherein multiple chemistries may be utilized to take advantage of the desirable characteristics of each chemistry.
PCT/US2003/040719 2002-12-19 2003-12-18 Multi-chemistry electrochemical processing system WO2004057060A2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2005502657A JP2006511717A (en) 2002-12-19 2003-12-18 Multi-chemical electrochemical processing system

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US43512102P 2002-12-19 2002-12-19
US60/435,121 2002-12-19
US10/438,624 US20040118694A1 (en) 2002-12-19 2003-05-14 Multi-chemistry electrochemical processing system
US10/438,624 2003-05-14

Publications (2)

Publication Number Publication Date
WO2004057060A2 WO2004057060A2 (en) 2004-07-08
WO2004057060A3 true WO2004057060A3 (en) 2005-12-01

Family

ID=32600232

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2003/040719 WO2004057060A2 (en) 2002-12-19 2003-12-18 Multi-chemistry electrochemical processing system

Country Status (4)

Country Link
US (1) US20040118694A1 (en)
JP (1) JP2006511717A (en)
TW (1) TW200415262A (en)
WO (1) WO2004057060A2 (en)

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US20080163900A1 (en) * 2007-01-05 2008-07-10 Douglas Richards Ipa delivery system for drying
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US10233556B2 (en) 2010-07-02 2019-03-19 Lam Research Corporation Dynamic modulation of cross flow manifold during electroplating
US10094034B2 (en) 2015-08-28 2018-10-09 Lam Research Corporation Edge flow element for electroplating apparatus
US9523155B2 (en) 2012-12-12 2016-12-20 Novellus Systems, Inc. Enhancement of electrolyte hydrodynamics for efficient mass transfer during electroplating
US9624592B2 (en) 2010-07-02 2017-04-18 Novellus Systems, Inc. Cross flow manifold for electroplating apparatus
US8795480B2 (en) * 2010-07-02 2014-08-05 Novellus Systems, Inc. Control of electrolyte hydrodynamics for efficient mass transfer during electroplating
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CN104625260B (en) * 2013-11-06 2017-03-29 富泰华精密电子（郑州）有限公司 Electrolytic machining device
US10364505B2 (en) 2016-05-24 2019-07-30 Lam Research Corporation Dynamic modulation of cross flow manifold during elecroplating
US11482434B2 (en) * 2016-10-18 2022-10-25 Belting E-Town Semiconductor Technology Co., Ltd Systems and methods for workpiece processing
US11001934B2 (en) 2017-08-21 2021-05-11 Lam Research Corporation Methods and apparatus for flow isolation and focusing during electroplating
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Also Published As

Publication number Publication date
TW200415262A (en) 2004-08-16
WO2004057060A2 (en) 2004-07-08
US20040118694A1 (en) 2004-06-24
JP2006511717A (en) 2006-04-06

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