WO2004054010A3 - Low temperature process for passivation applications - Google Patents

Low temperature process for passivation applications Download PDF

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Publication number
WO2004054010A3
WO2004054010A3 PCT/US2003/039385 US0339385W WO2004054010A3 WO 2004054010 A3 WO2004054010 A3 WO 2004054010A3 US 0339385 W US0339385 W US 0339385W WO 2004054010 A3 WO2004054010 A3 WO 2004054010A3
Authority
WO
WIPO (PCT)
Prior art keywords
layer
cathode
low temperature
temperature process
organic
Prior art date
Application number
PCT/US2003/039385
Other languages
French (fr)
Other versions
WO2004054010A2 (en
Inventor
Mark Hsiao
Takako Takehara
Quanyuan Shang
William R Harshbarger
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Priority to JP2004558687A priority Critical patent/JP2006510170A/en
Publication of WO2004054010A2 publication Critical patent/WO2004054010A2/en
Publication of WO2004054010A3 publication Critical patent/WO2004054010A3/en

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/84—Passivation; Containers; Encapsulations
    • H10K50/844—Encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/84—Passivation; Containers; Encapsulations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02142—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing silicon and at least one metal element, e.g. metal silicate based insulators or metal silicon oxynitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H01L21/02274—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K77/00—Constructional details of devices covered by this subclass and not covered by groups H10K10/80, H10K30/80, H10K50/80 or H10K59/80
    • H10K77/10—Substrates, e.g. flexible substrates

Abstract

An organic electroluminescent device comprising an anode layer on a substrate, an organic layer on the anode layer, and a cathode layer on the organic layer. In one embodiment, the cathode layer is subjected to H2 plasma prior to deposition of a protective layer over the cathode. In another embodiment, the organic electroluminescent device is encapsulated with an inner encapsulation layer on the cathode layer, and an outer encapsulation layer on the inner encapsulation layer. The inner layer is optimized for adhesion to the cathode layer.
PCT/US2003/039385 2002-12-11 2003-12-10 Low temperature process for passivation applications WO2004054010A2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2004558687A JP2006510170A (en) 2002-12-11 2003-12-10 Low temperature process for passivation applications

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/317,774 2002-12-11
US10/317,774 US7086918B2 (en) 2002-12-11 2002-12-11 Low temperature process for passivation applications

Publications (2)

Publication Number Publication Date
WO2004054010A2 WO2004054010A2 (en) 2004-06-24
WO2004054010A3 true WO2004054010A3 (en) 2004-11-18

Family

ID=32506214

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2003/039385 WO2004054010A2 (en) 2002-12-11 2003-12-10 Low temperature process for passivation applications

Country Status (6)

Country Link
US (1) US7086918B2 (en)
JP (1) JP2006510170A (en)
KR (1) KR20050084075A (en)
CN (2) CN1717817A (en)
TW (1) TW200421927A (en)
WO (1) WO2004054010A2 (en)

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Also Published As

Publication number Publication date
JP2006510170A (en) 2006-03-23
US20040113542A1 (en) 2004-06-17
CN101350396A (en) 2009-01-21
WO2004054010A2 (en) 2004-06-24
US7086918B2 (en) 2006-08-08
TW200421927A (en) 2004-10-16
KR20050084075A (en) 2005-08-26
CN1717817A (en) 2006-01-04

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