WO2004053210A1 - A substrate for epitaxy and a method of preparing the same - Google Patents
A substrate for epitaxy and a method of preparing the same Download PDFInfo
- Publication number
- WO2004053210A1 WO2004053210A1 PCT/JP2003/015906 JP0315906W WO2004053210A1 WO 2004053210 A1 WO2004053210 A1 WO 2004053210A1 JP 0315906 W JP0315906 W JP 0315906W WO 2004053210 A1 WO2004053210 A1 WO 2004053210A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- substrate
- layer
- nitride
- opto
- electric
- Prior art date
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Classifications
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/18—Epitaxial-layer growth characterised by the substrate
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
- C30B29/403—AIII-nitrides
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
- C30B29/403—AIII-nitrides
- C30B29/406—Gallium nitride
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02387—Group 13/15 materials
- H01L21/02389—Nitrides
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02441—Group 14 semiconducting materials
- H01L21/0245—Silicon, silicon germanium, germanium
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- H—ELECTRICITY
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02455—Group 13/15 materials
- H01L21/02458—Nitrides
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02516—Crystal orientation
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02538—Group 13/15 materials
- H01L21/0254—Nitrides
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/0257—Doping during depositing
- H01L21/02573—Conductivity type
- H01L21/02576—N-type
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- H—ELECTRICITY
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/0257—Doping during depositing
- H01L21/02573—Conductivity type
- H01L21/02579—P-type
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- H—ELECTRICITY
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/0257—Doping during depositing
- H01L21/02573—Conductivity type
- H01L21/02581—Transition metal or rare earth elements
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
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- H—ELECTRICITY
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02623—Liquid deposition
- H01L21/02628—Liquid deposition using solutions
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02636—Selective deposition, e.g. simultaneous growth of mono- and non-monocrystalline semiconductor materials
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/26—Web or sheet containing structurally defined element or component, the element or component having a specified physical dimension
- Y10T428/266—Web or sheet containing structurally defined element or component, the element or component having a specified physical dimension of base or substrate
Abstract
Description
Claims
Priority Applications (8)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE60331245T DE60331245D1 (en) | 2002-12-11 | 2003-12-11 | SUBSTRATE FOR EPITAXIA AND METHOD FOR THE PRODUCTION THEREOF |
EP03778843A EP1576210B1 (en) | 2002-12-11 | 2003-12-11 | A substrate for epitaxy and a method of preparing the same |
JP2004558483A JP4860927B2 (en) | 2002-12-11 | 2003-12-11 | Epitaxy substrate and manufacturing method thereof |
US10/538,407 US7387677B2 (en) | 2002-12-11 | 2003-12-11 | Substrate for epitaxy and method of preparing the same |
AU2003285769A AU2003285769A1 (en) | 2002-12-11 | 2003-12-11 | A substrate for epitaxy and a method of preparing the same |
AT03778843T ATE457372T1 (en) | 2002-12-11 | 2003-12-11 | SUBSTRATE FOR EPITAXY AND METHOD FOR THE PRODUCTION THEREOF |
HK06102217A HK1083030A1 (en) | 2002-12-11 | 2006-02-20 | A substrate for epitaxy and a method of preparing the same |
US12/213,212 US8110848B2 (en) | 2002-12-11 | 2008-06-16 | Substrate for epitaxy and method of preparing the same |
Applications Claiming Priority (8)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PLP-357709 | 2002-12-11 | ||
PL357709A PL225425B1 (en) | 2002-12-11 | 2002-12-11 | Method of fabrication of epitaxial layer standardized complex substrate (template type substrates) from voluminal mono-crystalline nitride containing gallium featuring increased heat resistance |
PLP-357707 | 2002-12-11 | ||
PL02357708A PL357708A1 (en) | 2002-12-11 | 2002-12-11 | Method of fabrication of epitaxial layer standardized substrate (template type substrates) from voluminal mono-crystalline aluminium nitride and nitride containing gallium for epitaxy of layers with high aluminium content as well as devices requiring efficient heat abstraction |
PLP-357708 | 2002-12-11 | ||
PL357707A PL225424B1 (en) | 2002-12-11 | 2002-12-11 | Method of fabrication of eptaxial layer standardized substrate (template type substrates) from voluminal mono-crystalline nitride containing gallium with surface suitable for epitaxy featuring required electric properties |
PL357696A PL225423B1 (en) | 2002-12-11 | 2002-12-11 | Method of producing substrate standardized with epitaxial layer (template type substrates) from voluminal mono-crystalline nitride containing gallium with surface of high structural quality |
PLP-357696 | 2002-12-11 |
Related Child Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US10538407 A-371-Of-International | 2003-12-11 | ||
US12/213,212 Continuation US8110848B2 (en) | 2002-12-11 | 2008-06-16 | Substrate for epitaxy and method of preparing the same |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2004053210A1 true WO2004053210A1 (en) | 2004-06-24 |
Family
ID=32512483
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2003/015906 WO2004053210A1 (en) | 2002-12-11 | 2003-12-11 | A substrate for epitaxy and a method of preparing the same |
PCT/JP2003/015905 WO2004053209A1 (en) | 2002-12-11 | 2003-12-11 | A template type substrate and a method of preparing the same |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2003/015905 WO2004053209A1 (en) | 2002-12-11 | 2003-12-11 | A template type substrate and a method of preparing the same |
Country Status (11)
Country | Link |
---|---|
US (3) | US7387677B2 (en) |
EP (2) | EP1576210B1 (en) |
JP (2) | JP4860927B2 (en) |
KR (2) | KR101060073B1 (en) |
AT (2) | ATE445722T1 (en) |
AU (2) | AU2003285768A1 (en) |
DE (2) | DE60329713D1 (en) |
HK (1) | HK1083030A1 (en) |
PL (2) | PL224991B1 (en) |
TW (2) | TWI334229B (en) |
WO (2) | WO2004053210A1 (en) |
Cited By (9)
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EP1806440A2 (en) * | 2006-01-10 | 2007-07-11 | Ngk Insulators, Ltd. | Manufacturing method of aluminum nitride single crystal and aluminum nitride single crystal |
DE112006001751B4 (en) * | 2005-07-06 | 2010-04-08 | International Rectifier Corporation, El Segundo | Power semiconductor device and method for manufacturing a semiconductor device |
US8269251B2 (en) | 2007-05-17 | 2012-09-18 | Mitsubishi Chemical Corporation | Method for producing group III nitride semiconductor crystal, group III nitride semiconductor substrate, and semiconductor light-emitting device |
US8882910B2 (en) | 2005-03-28 | 2014-11-11 | Toyoda Gosei Co., Ltd. | AlGaN substrate and production method thereof |
US8975639B2 (en) | 2010-04-06 | 2015-03-10 | Instytut Wysokich Ciśnień Polskiej Akademi Nauk | Substrate for epitaxial growth |
US9985102B2 (en) | 2008-06-04 | 2018-05-29 | Sixpoint Materials, Inc. | Methods for producing improved crystallinity group III-nitride crystals from initial group III-nitride seed by ammonothermal growth |
US10087548B2 (en) | 2006-04-07 | 2018-10-02 | Sixpoint Materials, Inc. | High-pressure vessel for growing group III nitride crystals and method of growing group III nitride crystals using high-pressure vessel and group III nitride crystal |
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US20060005763A1 (en) * | 2001-12-24 | 2006-01-12 | Crystal Is, Inc. | Method and apparatus for producing large, single-crystals of aluminum nitride |
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US8882910B2 (en) | 2005-03-28 | 2014-11-11 | Toyoda Gosei Co., Ltd. | AlGaN substrate and production method thereof |
DE112006001751B4 (en) * | 2005-07-06 | 2010-04-08 | International Rectifier Corporation, El Segundo | Power semiconductor device and method for manufacturing a semiconductor device |
US7759699B2 (en) | 2005-07-06 | 2010-07-20 | International Rectifier Corporation | III-nitride enhancement mode devices |
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EP1806440A2 (en) * | 2006-01-10 | 2007-07-11 | Ngk Insulators, Ltd. | Manufacturing method of aluminum nitride single crystal and aluminum nitride single crystal |
EP1806440A3 (en) * | 2006-01-10 | 2009-05-13 | Ngk Insulators, Ltd. | Manufacturing method of aluminum nitride single crystal and aluminum nitride single crystal |
US10087548B2 (en) | 2006-04-07 | 2018-10-02 | Sixpoint Materials, Inc. | High-pressure vessel for growing group III nitride crystals and method of growing group III nitride crystals using high-pressure vessel and group III nitride crystal |
US8269251B2 (en) | 2007-05-17 | 2012-09-18 | Mitsubishi Chemical Corporation | Method for producing group III nitride semiconductor crystal, group III nitride semiconductor substrate, and semiconductor light-emitting device |
US9112096B2 (en) | 2007-05-17 | 2015-08-18 | Mitsubishi Chemical Corporation | Method for producing group-III nitride semiconductor crystal, group-III nitride semiconductor substrate, and semiconductor light emitting device |
EP2245218B1 (en) * | 2008-02-25 | 2019-06-19 | SixPoint Materials, Inc. | Method for producing group iii nitride wafers and group iii nitride wafers |
US9985102B2 (en) | 2008-06-04 | 2018-05-29 | Sixpoint Materials, Inc. | Methods for producing improved crystallinity group III-nitride crystals from initial group III-nitride seed by ammonothermal growth |
US8975639B2 (en) | 2010-04-06 | 2015-03-10 | Instytut Wysokich Ciśnień Polskiej Akademi Nauk | Substrate for epitaxial growth |
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