WO2004053008A2 - Passivative chemical mechanical polishing composition for copper film planarization - Google Patents
Passivative chemical mechanical polishing composition for copper film planarization Download PDFInfo
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- WO2004053008A2 WO2004053008A2 PCT/US2003/038047 US0338047W WO2004053008A2 WO 2004053008 A2 WO2004053008 A2 WO 2004053008A2 US 0338047 W US0338047 W US 0338047W WO 2004053008 A2 WO2004053008 A2 WO 2004053008A2
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- LSXWFXONGKSEMY-UHFFFAOYSA-N di-tert-butyl peroxide Chemical compound CC(C)(C)OOC(C)(C)C LSXWFXONGKSEMY-UHFFFAOYSA-N 0.000 claims description 2
- XBDQKXXYIPTUBI-UHFFFAOYSA-N dimethylselenoniopropionate Natural products CCC(O)=O XBDQKXXYIPTUBI-UHFFFAOYSA-N 0.000 claims description 2
- 125000003700 epoxy group Chemical group 0.000 claims description 2
- 150000002148 esters Chemical class 0.000 claims description 2
- 229960004642 ferric ammonium citrate Drugs 0.000 claims description 2
- YAGKRVSRTSUGEY-UHFFFAOYSA-N ferricyanide Chemical class [Fe+3].N#[C-].N#[C-].N#[C-].N#[C-].N#[C-].N#[C-] YAGKRVSRTSUGEY-UHFFFAOYSA-N 0.000 claims description 2
- 235000019253 formic acid Nutrition 0.000 claims description 2
- 239000001530 fumaric acid Substances 0.000 claims description 2
- 229940074391 gallic acid Drugs 0.000 claims description 2
- 235000004515 gallic acid Nutrition 0.000 claims description 2
- 239000000174 gluconic acid Substances 0.000 claims description 2
- 235000012208 gluconic acid Nutrition 0.000 claims description 2
- ZDXPYRJPNDTMRX-UHFFFAOYSA-N glutamine Natural products OC(=O)C(N)CCC(N)=O ZDXPYRJPNDTMRX-UHFFFAOYSA-N 0.000 claims description 2
- 235000011187 glycerol Nutrition 0.000 claims description 2
- QWPPOHNGKGFGJK-UHFFFAOYSA-N hypochlorous acid Chemical class ClO QWPPOHNGKGFGJK-UHFFFAOYSA-N 0.000 claims description 2
- GEOVEUCEIQCBKH-UHFFFAOYSA-N hypoiodous acid Chemical class IO GEOVEUCEIQCBKH-UHFFFAOYSA-N 0.000 claims description 2
- ICIWUVCWSCSTAQ-UHFFFAOYSA-N iodic acid Chemical class OI(=O)=O ICIWUVCWSCSTAQ-UHFFFAOYSA-N 0.000 claims description 2
- 239000004313 iron ammonium citrate Substances 0.000 claims description 2
- 235000000011 iron ammonium citrate Nutrition 0.000 claims description 2
- 239000004310 lactic acid Substances 0.000 claims description 2
- 235000014655 lactic acid Nutrition 0.000 claims description 2
- 229960002510 mandelic acid Drugs 0.000 claims description 2
- 150000001247 metal acetylides Chemical class 0.000 claims description 2
- 229910044991 metal oxide Inorganic materials 0.000 claims description 2
- 150000004706 metal oxides Chemical class 0.000 claims description 2
- 238000004377 microelectronic Methods 0.000 claims description 2
- DUWWHGPELOTTOE-UHFFFAOYSA-N n-(5-chloro-2,4-dimethoxyphenyl)-3-oxobutanamide Chemical compound COC1=CC(OC)=C(NC(=O)CC(C)=O)C=C1Cl DUWWHGPELOTTOE-UHFFFAOYSA-N 0.000 claims description 2
- FUZZWVXGSFPDMH-UHFFFAOYSA-N n-hexanoic acid Natural products CCCCCC(O)=O FUZZWVXGSFPDMH-UHFFFAOYSA-N 0.000 claims description 2
- 229910017604 nitric acid Inorganic materials 0.000 claims description 2
- MGFYIUFZLHCRTH-UHFFFAOYSA-N nitrilotriacetic acid Chemical compound OC(=O)CN(CC(O)=O)CC(O)=O MGFYIUFZLHCRTH-UHFFFAOYSA-N 0.000 claims description 2
- 125000000449 nitro group Chemical group [O-][N+](*)=O 0.000 claims description 2
- 239000002736 nonionic surfactant Substances 0.000 claims description 2
- 150000007524 organic acids Chemical class 0.000 claims description 2
- 235000005985 organic acids Nutrition 0.000 claims description 2
- 235000006408 oxalic acid Nutrition 0.000 claims description 2
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 claims description 2
- FJKROLUGYXJWQN-UHFFFAOYSA-N papa-hydroxy-benzoic acid Natural products OC(=O)C1=CC=C(O)C=C1 FJKROLUGYXJWQN-UHFFFAOYSA-N 0.000 claims description 2
- KHIWWQKSHDUIBK-UHFFFAOYSA-N periodic acid Chemical class OI(=O)(=O)=O KHIWWQKSHDUIBK-UHFFFAOYSA-N 0.000 claims description 2
- 150000004965 peroxy acids Chemical class 0.000 claims description 2
- JRKICGRDRMAZLK-UHFFFAOYSA-L peroxydisulfate Chemical class [O-]S(=O)(=O)OOS([O-])(=O)=O JRKICGRDRMAZLK-UHFFFAOYSA-L 0.000 claims description 2
- 238000007517 polishing process Methods 0.000 claims description 2
- 239000004584 polyacrylic acid Substances 0.000 claims description 2
- 229920002647 polyamide Polymers 0.000 claims description 2
- 229920000768 polyamine Chemical class 0.000 claims description 2
- 229920000515 polycarbonate Polymers 0.000 claims description 2
- 239000004417 polycarbonate Substances 0.000 claims description 2
- 229920000867 polyelectrolyte Polymers 0.000 claims description 2
- 229920000647 polyepoxide Polymers 0.000 claims description 2
- 229920000728 polyester Polymers 0.000 claims description 2
- 229920002223 polystyrene Polymers 0.000 claims description 2
- 229920002689 polyvinyl acetate Polymers 0.000 claims description 2
- 239000011118 polyvinyl acetate Substances 0.000 claims description 2
- 229920002451 polyvinyl alcohol Polymers 0.000 claims description 2
- 229920000915 polyvinyl chloride Polymers 0.000 claims description 2
- 239000004800 polyvinyl chloride Substances 0.000 claims description 2
- 229920000036 polyvinylpyrrolidone Polymers 0.000 claims description 2
- 239000001267 polyvinylpyrrolidone Substances 0.000 claims description 2
- 235000013855 polyvinylpyrrolidone Nutrition 0.000 claims description 2
- 229910052700 potassium Inorganic materials 0.000 claims description 2
- 239000011591 potassium Substances 0.000 claims description 2
- JLKDVMWYMMLWTI-UHFFFAOYSA-M potassium iodate Chemical compound [K+].[O-]I(=O)=O JLKDVMWYMMLWTI-UHFFFAOYSA-M 0.000 claims description 2
- 239000001230 potassium iodate Substances 0.000 claims description 2
- 235000006666 potassium iodate Nutrition 0.000 claims description 2
- 229940093930 potassium iodate Drugs 0.000 claims description 2
- 239000012286 potassium permanganate Substances 0.000 claims description 2
- BDERNNFJNOPAEC-UHFFFAOYSA-N propan-1-ol Chemical compound CCCO BDERNNFJNOPAEC-UHFFFAOYSA-N 0.000 claims description 2
- 235000019260 propionic acid Nutrition 0.000 claims description 2
- 229920005989 resin Polymers 0.000 claims description 2
- 239000011347 resin Substances 0.000 claims description 2
- 229960004889 salicylic acid Drugs 0.000 claims description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 2
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 2
- MWNQXXOSWHCCOZ-UHFFFAOYSA-L sodium;oxido carbonate Chemical class [Na+].[O-]OC([O-])=O MWNQXXOSWHCCOZ-UHFFFAOYSA-L 0.000 claims description 2
- 235000015523 tannic acid Nutrition 0.000 claims description 2
- 229940033123 tannic acid Drugs 0.000 claims description 2
- 229920002258 tannic acid Polymers 0.000 claims description 2
- 239000011975 tartaric acid Substances 0.000 claims description 2
- 235000002906 tartaric acid Nutrition 0.000 claims description 2
- 229940073455 tetraethylammonium hydroxide Drugs 0.000 claims description 2
- LRGJRHZIDJQFCL-UHFFFAOYSA-M tetraethylazanium;hydroxide Chemical compound [OH-].CC[N+](CC)(CC)CC LRGJRHZIDJQFCL-UHFFFAOYSA-M 0.000 claims description 2
- VHLDQAOFSQCOFS-UHFFFAOYSA-M tetrakis(2-hydroxyethyl)azanium;hydroxide Chemical compound [OH-].OCC[N+](CCO)(CCO)CCO VHLDQAOFSQCOFS-UHFFFAOYSA-M 0.000 claims description 2
- 229920005992 thermoplastic resin Polymers 0.000 claims description 2
- 150000003585 thioureas Chemical class 0.000 claims description 2
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 claims description 2
- 229910001887 tin oxide Inorganic materials 0.000 claims description 2
- 239000004408 titanium dioxide Substances 0.000 claims description 2
- VZCYOOQTPOCHFL-UHFFFAOYSA-N trans-butenedioic acid Natural products OC(=O)C=CC(O)=O VZCYOOQTPOCHFL-UHFFFAOYSA-N 0.000 claims description 2
- 150000003673 urethanes Chemical class 0.000 claims description 2
- 239000004474 valine Substances 0.000 claims description 2
- 229910001928 zirconium oxide Inorganic materials 0.000 claims description 2
- 239000003795 chemical substances by application Substances 0.000 claims 10
- UOFRJXGVFHUJER-UHFFFAOYSA-N 2-[bis(2-hydroxyethyl)amino]ethanol;hydrate Chemical compound [OH-].OCC[NH+](CCO)CCO UOFRJXGVFHUJER-UHFFFAOYSA-N 0.000 claims 1
- 229920000178 Acrylic resin Polymers 0.000 claims 1
- 239000004925 Acrylic resin Substances 0.000 claims 1
- UEEJHVSXFDXPFK-UHFFFAOYSA-N N-dimethylaminoethanol Chemical compound CN(C)CCO UEEJHVSXFDXPFK-UHFFFAOYSA-N 0.000 claims 1
- IMUDHTPIFIBORV-UHFFFAOYSA-N aminoethylpiperazine Chemical compound NCCN1CCNCC1 IMUDHTPIFIBORV-UHFFFAOYSA-N 0.000 claims 1
- 150000003851 azoles Chemical class 0.000 claims 1
- 150000001735 carboxylic acids Chemical class 0.000 claims 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-M hydroxide Chemical compound [OH-] XLYOFNOQVPJJNP-UHFFFAOYSA-M 0.000 claims 1
- 125000002887 hydroxy group Chemical group [H]O* 0.000 claims 1
- WGCNASOHLSPBMP-UHFFFAOYSA-N hydroxyacetaldehyde Natural products OCC=O WGCNASOHLSPBMP-UHFFFAOYSA-N 0.000 claims 1
- LRBQNJMCXXYXIU-NRMVVENXSA-N tannic acid Chemical compound OC1=C(O)C(O)=CC(C(=O)OC=2C(=C(O)C=C(C=2)C(=O)OC[C@@H]2[C@H]([C@H](OC(=O)C=3C=C(OC(=O)C=4C=C(O)C(O)=C(O)C=4)C(O)=C(O)C=3)[C@@H](OC(=O)C=3C=C(OC(=O)C=4C=C(O)C(O)=C(O)C=4)C(O)=C(O)C=3)[C@@H](OC(=O)C=3C=C(OC(=O)C=4C=C(O)C(O)=C(O)C=4)C(O)=C(O)C=3)O2)OC(=O)C=2C=C(OC(=O)C=3C=C(O)C(O)=C(O)C=3)C(O)=C(O)C=2)O)=C1 LRBQNJMCXXYXIU-NRMVVENXSA-N 0.000 claims 1
- ZCWKIFAQRXNZCH-UHFFFAOYSA-M tetramethylazanium;perchlorate Chemical compound C[N+](C)(C)C.[O-]Cl(=O)(=O)=O ZCWKIFAQRXNZCH-UHFFFAOYSA-M 0.000 claims 1
- 239000004634 thermosetting polymer Substances 0.000 claims 1
- JPVYNHNXODAKFH-UHFFFAOYSA-N Cu2+ Chemical compound [Cu+2] JPVYNHNXODAKFH-UHFFFAOYSA-N 0.000 abstract description 11
- 238000012545 processing Methods 0.000 abstract description 4
- 229910001431 copper ion Inorganic materials 0.000 abstract description 3
- 230000002411 adverse Effects 0.000 abstract description 2
- 230000007812 deficiency Effects 0.000 abstract description 2
- 239000002002 slurry Substances 0.000 description 31
- 235000012431 wafers Nutrition 0.000 description 12
- 229910052751 metal Inorganic materials 0.000 description 11
- 239000002184 metal Substances 0.000 description 11
- 239000004615 ingredient Substances 0.000 description 7
- 241000894007 species Species 0.000 description 7
- 230000004888 barrier function Effects 0.000 description 6
- 230000006870 function Effects 0.000 description 5
- 239000000243 solution Substances 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 4
- 239000002609 medium Substances 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- 230000008901 benefit Effects 0.000 description 3
- 229910000366 copper(II) sulfate Inorganic materials 0.000 description 3
- 238000002161 passivation Methods 0.000 description 3
- 230000003068 static effect Effects 0.000 description 3
- ASOKPJOREAFHNY-UHFFFAOYSA-N 1-Hydroxybenzotriazole Chemical compound C1=CC=C2N(O)N=NC2=C1 ASOKPJOREAFHNY-UHFFFAOYSA-N 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- YZCKVEUIGOORGS-IGMARMGPSA-N Protium Chemical compound [1H] YZCKVEUIGOORGS-IGMARMGPSA-N 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- 239000008364 bulk solution Substances 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 229910000365 copper sulfate Inorganic materials 0.000 description 2
- ARUVKPQLZAKDPS-UHFFFAOYSA-L copper(II) sulfate Chemical compound [Cu+2].[O-][S+2]([O-])([O-])[O-] ARUVKPQLZAKDPS-UHFFFAOYSA-L 0.000 description 2
- 239000008367 deionised water Substances 0.000 description 2
- 229910021641 deionized water Inorganic materials 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 239000003989 dielectric material Substances 0.000 description 2
- 238000004090 dissolution Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 230000001590 oxidative effect Effects 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 150000003254 radicals Chemical class 0.000 description 2
- 238000012876 topography Methods 0.000 description 2
- HZAXFHJVJLSVMW-UHFFFAOYSA-N 2-Aminoethan-1-ol Chemical compound NCCO HZAXFHJVJLSVMW-UHFFFAOYSA-N 0.000 description 1
- KIZQNNOULOCVDM-UHFFFAOYSA-M 2-hydroxyethyl(trimethyl)azanium;hydroxide Chemical compound [OH-].C[N+](C)(C)CCO KIZQNNOULOCVDM-UHFFFAOYSA-M 0.000 description 1
- JVSMPWHQUPKRNV-UHFFFAOYSA-N 2h-tetrazol-5-amine;hydrate Chemical compound O.NC=1N=NNN=1 JVSMPWHQUPKRNV-UHFFFAOYSA-N 0.000 description 1
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- 229920002873 Polyethylenimine Polymers 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 1
- GSEJCLTVZPLZKY-UHFFFAOYSA-N Triethanolamine Chemical compound OCCN(CCO)CCO GSEJCLTVZPLZKY-UHFFFAOYSA-N 0.000 description 1
- 239000003082 abrasive agent Substances 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 239000002671 adjuvant Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 125000000129 anionic group Chemical group 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- GIXWDMTZECRIJT-UHFFFAOYSA-N aurintricarboxylic acid Chemical compound C1=CC(=O)C(C(=O)O)=CC1=C(C=1C=C(C(O)=CC=1)C(O)=O)C1=CC=C(O)C(C(O)=O)=C1 GIXWDMTZECRIJT-UHFFFAOYSA-N 0.000 description 1
- 239000002585 base Substances 0.000 description 1
- 125000003354 benzotriazolyl group Chemical group N1N=NC2=C1C=CC=C2* 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910001593 boehmite Inorganic materials 0.000 description 1
- 239000006172 buffering agent Substances 0.000 description 1
- 238000003421 catalytic decomposition reaction Methods 0.000 description 1
- 125000002091 cationic group Chemical group 0.000 description 1
- 150000001768 cations Chemical class 0.000 description 1
- 239000013522 chelant Substances 0.000 description 1
- ZCDOYSPFYFSLEW-UHFFFAOYSA-N chromate(2-) Chemical compound [O-][Cr]([O-])(=O)=O ZCDOYSPFYFSLEW-UHFFFAOYSA-N 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 230000000536 complexating effect Effects 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- JZCCFEFSEZPSOG-UHFFFAOYSA-L copper(II) sulfate pentahydrate Chemical compound O.O.O.O.O.[Cu+2].[O-]S([O-])(=O)=O JZCCFEFSEZPSOG-UHFFFAOYSA-L 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- SOCTUWSJJQCPFX-UHFFFAOYSA-N dichromate(2-) Chemical class [O-][Cr](=O)(=O)O[Cr]([O-])(=O)=O SOCTUWSJJQCPFX-UHFFFAOYSA-N 0.000 description 1
- ZBCBWPMODOFKDW-UHFFFAOYSA-N diethanolamine Chemical compound OCCNCCO ZBCBWPMODOFKDW-UHFFFAOYSA-N 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000002848 electrochemical method Methods 0.000 description 1
- 238000004070 electrodeposition Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- LRBQNJMCXXYXIU-QWKBTXIPSA-N gallotannic acid Chemical compound OC1=C(O)C(O)=CC(C(=O)OC=2C(=C(O)C=C(C=2)C(=O)OC[C@H]2[C@@H]([C@@H](OC(=O)C=3C=C(OC(=O)C=4C=C(O)C(O)=C(O)C=4)C(O)=C(O)C=3)[C@H](OC(=O)C=3C=C(OC(=O)C=4C=C(O)C(O)=C(O)C=4)C(O)=C(O)C=3)[C@@H](OC(=O)C=3C=C(OC(=O)C=4C=C(O)C(O)=C(O)C=4)C(O)=C(O)C=3)O2)OC(=O)C=2C=C(OC(=O)C=3C=C(O)C(O)=C(O)C=3)C(O)=C(O)C=2)O)=C1 LRBQNJMCXXYXIU-QWKBTXIPSA-N 0.000 description 1
- 239000008187 granular material Substances 0.000 description 1
- FAHBNUUHRFUEAI-UHFFFAOYSA-M hydroxidooxidoaluminium Chemical compound O[Al]=O FAHBNUUHRFUEAI-UHFFFAOYSA-M 0.000 description 1
- NBZBKCUXIYYUSX-UHFFFAOYSA-N iminodiacetic acid Chemical compound OC(=O)CNCC(O)=O NBZBKCUXIYYUSX-UHFFFAOYSA-N 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 150000004682 monohydrates Chemical class 0.000 description 1
- VLTRZXGMWDSKGL-UHFFFAOYSA-M perchlorate Inorganic materials [O-]Cl(=O)(=O)=O VLTRZXGMWDSKGL-UHFFFAOYSA-M 0.000 description 1
- 239000000546 pharmaceutical excipient Substances 0.000 description 1
- 229920000136 polysorbate Polymers 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- 230000002829 reductive effect Effects 0.000 description 1
- 239000000523 sample Substances 0.000 description 1
- 239000003381 stabilizer Substances 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
- IJGSGCGKAAXRSC-UHFFFAOYSA-M tris(2-hydroxyethyl)-methylazanium;hydroxide Chemical compound [OH-].OCC[N+](C)(CCO)CCO IJGSGCGKAAXRSC-UHFFFAOYSA-M 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F3/00—Brightening metals by chemical means
- C23F3/04—Heavy metals
- C23F3/06—Heavy metals with acidic solutions
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F11/00—Inhibiting corrosion of metallic material by applying inhibitors to the surface in danger of corrosion or adding them to the corrosive agent
- C23F11/08—Inhibiting corrosion of metallic material by applying inhibitors to the surface in danger of corrosion or adding them to the corrosive agent in other liquids
- C23F11/10—Inhibiting corrosion of metallic material by applying inhibitors to the surface in danger of corrosion or adding them to the corrosive agent in other liquids using organic inhibitors
- C23F11/14—Nitrogen-containing compounds
- C23F11/141—Amines; Quaternary ammonium compounds
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F3/00—Brightening metals by chemical means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/32115—Planarisation
- H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
Definitions
- the present invention relates to a chemical mechanical polishing composition and to a method of using same for the polishing of semiconductor substrates having copper thereon, e.g., copper interconnects, electrodes, or metallization, as part of a semiconductor device structure on a wafer substrate.
- semiconductor substrates having copper thereon e.g., copper interconnects, electrodes, or metallization
- Copper is widely employed in semiconductor manufacturing as a material of construction for components of semiconductor device structures on wafer substrates (e.g., contacts, electrodes, conductive vias, field emitter base layers, etc.), and it is rapidly becoming the interconnect metal of choice in semiconductor manufacturing due to its higher conductivity and increased electromigration resistance relative to aluminum and aluminum alloys.
- the process scheme for utilizing copper in semiconductor manufacturing involves the damascene approach, wherein features are etched in a dielectric material. In the dual damascene process a single step is used to form both plugs and lines.
- barrier layers such as Ta or TaN deposited by various deposition methods, are often used to seal the copper interconnects.
- a thin seed layer of copper is deposited on the barrier material via physical vapor deposition, followed by electrodeposition of copper to fill the features.
- the deposited copper must then be planarized to render it of suitable form to accommodate subsequent process steps in the fabrication of the finished semiconductor product, and in order to satisfactorily operate in the microcircuitry in which it is present.
- the planarization typically involves chemical mechanical polishing (CMP), using a CMP composition formulated for such purpose.
- the first step slurry (Step I) is used to rapidly planarize the topography and to uniformly remove the remaining copper, with the polish stopping at the barrier layer.
- the second step slurry (Step II) removes the barrier layer material at a high removal rate and stops on the dielectric oxide layer, or alternatively on a cap layer that has been applied to protect the oxide.
- Step I chemical mechanical polishing (CMP) compositions for planarization and polishing of copper typically are in the form of slurries containing an abrasive of suitable type, e.g., an abrasive selected from among silica, alumina, and other oxides and mineralic materials, in a solvent medium containing one or more solvent species, e.g., water, organic solvents, etc.
- An abrasive of suitable type e.g., an abrasive selected from among silica, alumina, and other oxides and mineralic materials
- solvent medium containing one or more solvent species, e.g., water, organic solvents, etc.
- One type of CMP composition for planarizing copper surfaces includes an aqueous slurry of abrasive particles, containing hydrogen peroxide as an oxidizing component and glycine as a chelating agent.
- step I CMP slurries containing abrasive particles, hydrogen peroxide and glycine, the
- BTA compound benzotriazole
- BTA FW: 119.13
- insoluble Cu-BTA complex complexes with copper to form an insoluble Cu-BTA complex on the copper surface.
- the resulting insoluble protective film facilitates the planarization of the topography of the device structure being fabricated, since the recessed areas on the wafer surface are protected from dissolution, while mechanical action of the abrasive species on the protruding areas enables material removal and polishing to be carried out.
- the Cu-BTA complex minimizes corrosion and preserves the functional integrity of the copper device structures for their intended use.
- BTA functions well as a copper corrosion inhibitor in the absence of OH radicals generated as a result of the Cu 2+ -glycine induced catalytic decomposition of hydrogen peroxide.
- copper CMP slurries containing hydrogen peroxide and glycine the fo ⁇ nation of highly oxidizing OH radicals under dynamic CMP conditions cannot be avoided, since copper metal is readily oxidized in such CMP environment.
- BTA is not effective in protecting the low features of copper wafer surfaces during the CMP process, and thus allows "dishing" to occur in high-density patterned areas when Cu + cation is present in the CMP composition.
- An alternative to the use of BTA as a corrosion inhibitor in CMP compositions therefore is highly desirable. Specifically, an alternative corrosion inhibitor is desired, which is compatible with H 2 0 2 /glycine-based CMP compositions and effective to passivate copper surfaces when significant amounts of Cu ions are present in bulk solution and/or near the metal/solution interface during CMP processing.
- the present invention relates to CMP compositions containing 5-aminotetrazole
- the invention relates to a CMP composition for planarization of copper films, in which the composition includes oxidizing agent, chelating agent, and corrosion inhibitor, and the corrosion inhibitor includes 5-aminotetrazole.
- the invention relates to a CMP composition for planarization of copper films.
- the composition comprises an aqueous slurry medium including abrasive, solvent,
- ATA, H 2 O 2 and glycine have the following concentrations by weight, based on the total weight of the composition: ATA 0.01 - 10 wt.%
- Yet another aspect of the invention relates to a CMP composition including the following components by weight, based on the total weight of the composition:
- Still another aspect of the invention relates to a method of polishing copper on a substrate having copper thereon, including contacting copper on the substrate under CMP conditions with a CMP composition effective for polishing the copper, wherein the CMP composition includes ATA.
- Figure 1 is a graph of static etch rates of copper metal, in Angstroms per minute, as a function of added copper sulfate (CuS0 4 # 5H 2 0) concentration, in a H 2 0 2 /Glycine/Cu 2+ system at pH
- Figure 2 is a graph of removal rate of copper metal, in Angstroms per minute, as a function of ATA concentration in wt%, based on the total weight of the CMP slurry composition. DETAILED DESCRIPTION OF THE INVENTION. AND PREFERRED EMBODIMENTS
- the present invention is based on the discovery that 5-aminotetrazole
- ATA s pw : 85.06
- BTA copper corrosion inhibitor
- ATA-containing CMP composition achieves active passivation of copper surfaces even when significant amounts of copper ions, e.g., Cu 2+ cations, are present in bulk solution and/or at the metal/solution interface during CMP processing.
- copper ions e.g., Cu 2+ cations
- the ATA-containing CMP composition of the invention in its broad contemplation, can be formulated with any suitable constituents, including any appropriate oxidizing agent(s), chelating agent(s), and corrosion inhibitor(s), abrasive media, solvent media, and optionally any suitable additives, adjuvants, excipients, etc., such as stabilizing agents, acids, bases (e.g., amines), surfactants, buffering agents, etc.
- suitable constituents including any appropriate oxidizing agent(s), chelating agent(s), and corrosion inhibitor(s), abrasive media, solvent media, and optionally any suitable additives, adjuvants, excipients, etc., such as stabilizing agents, acids, bases (e.g., amines), surfactants, buffering agents, etc.
- Oxidizing agents employed in the broad practice of the invention can be of any suitable type, including for example ferric nitrate, ferric ammonium oxalate, ferric ammonium citrate, permanganate salts (e.g., potassium permanganate), peroxyacids (e.g. peracetic acid), peroxoborate salts (e.g., potassium peroxoborate), urea-hydrogen peroxide, iodate salts (e.g., potassium iodate), perchlorate salts (e.g.
- oxidizers include peracetic acid, urea-hydrogen peroxide, di-t-butyl peroxide, benzyl peroxide, hydrogen peroxide and compatible mixtures including two or more of such oxidizer species.
- Chelating agents in tire CMP compositions of the invention can be of any appropriate type, including, for example: glycine, serine, proline, leucine, alanine, asparagine, aspartic acid, glutamine, valine, lysine, etc.; polyamine complexes and their salts, including ethylenedi-iminetetraacetic acid, N-hydroxyethylemylenediaminetriacetic acid, nitrilotriacetic acid, iminodiacetic acid, diemylenefriaminepentaacetic acid, and ethanoldiglycinate; polycarboxylic acids, including phtlialic acid, oxalic acid, malic acid, succinic acid, mandelic acid, and mellitic acid; and compatible mixtures including two or more of the foregoing species.
- Preferred chelating agents include arnino acids, with glycine being most preferred.
- ATA is employed in CMP compositions of the invention in any suitable concentration. Suitable concentration of ATA in a specific formulation is readily empirically determinable within the skill of the art, based on the disclosure herein, to provide a CMP composition with suitable copper surface passivation characteristics even in CMP environments containing high levels of copper cations.
- the amount of ATA in the CMP composition is in a range of from about 0.01 to about 10% by weight, based on the total weight of the CMP composition, with an amount of ATA in a range of from about 0.05 to about 5% by weight being more preferred, an amount of ATA in a range of from about 0.10 to about 1.0% by weight being even more preferred, and an amount of ATA in a range of from about 0.2 to 0.8% by weight being most preferred, on the same total weight basis, although greater or lesser percentages may be employed to advantage in specific applications within the broad scope of tire present invention.
- the corrosion inhibitor component in the CMP composition of the invention comprises
- ATA can additionally include other corrosion inhibitor components in combination with ATA, in specific embodiments of the invention.
- Such other corrosion inhibitor components may be of any suitable type, including for example, imidazole, benzotriazole, benzimidazole, arnino, imino, carboxy, mercapto, nitro, alkyl, urea and thiourea compounds and derivatives, etc.
- Preferred inhibitors include tetrazoles and their derivatives, and the invention therefore contemplates the provision of ATA alone or in combination with other tetrazole (or other corrosion inhibitor) species, as the corrosion inhibitor in compositions according to the present invention.
- the abrasive can be of any suitable type, including, without limitation, metal oxides, silicon nitrides, carbides, etc. Specific examples include silica, alumina, silicon carbide, silicon nitride, iron oxide, ceria, zirconium oxide, tin oxide, titanium dioxide, and mixtures of two or more of such components in suitable form, such as grains, granules, particles, or other divided form.
- the abrasive can include composite particles formed of two or more materials, e.g., NYACOL® alumina-coated colloidal silica (Nyacol Nano Technologies, Inc., Ashland, MA).
- Alumina is a preferred inorganic abrasive and can be employed in the form of boehmite or transitional ⁇ , ⁇ or ⁇ phase alumina.
- Organic polymer particles e.g., including thermoset and/or thermoplastic resin(s), can be utilized as abrasives.
- Useful resins in the broad practice of the present invention include epoxies, urethanes, polyesters, polyamides, polycarbonates, polyolefins, polyvinylchloride, polystyrenes, polyolefins, and (meth)acryrics. Mixtures of two or more organic polymer particles can be used as the abrasive medium, as well as particles comprising both inorganic and organic components.
- Bases can be optionally employed for pH adjustment in compositions of the invention.
- Illustrative bases include, by way of example, potassium hydroxide, ammonium hydroxide and tefr-rmemylammoniumhydroxide (TMAH), tetraethylammonium hydroxide, trimethyl hydroxyethylammonium hydroxide, methyl tri (hydroxyethyl) ammonium hydroxide, tetra(hydroxyethyl)ammonium hydroxide, and benzyl trimethylammonium hydroxide.
- Acids can also be optionally employed for pH adjustment in compositions of the invention.
- the acids used can be of any suitable type, including, by way of example, formic acid, acetic acid, propanoic acid, butanoic acid, pentanoic acid, isovaleric acid, hexanoic acid, heptanoic acid, octanoic acid, nonanoic acid, lactic acid, hydrochloric acid, nitric acid, phosphoric acid, sulfuric acid, hydrofluoric acid, malic acid, fumaric acid, malonic acid, glutaric acid, glycolic acid, salicylic acid, 1,2,3-benzenetricarboxylic acid, tartaric acid, gluconic acid, citric acid, phthalic acid, pyrocatechoic acid, pyrogallol carboxylic acid, gallic acid, tannic acid, and mixtures including two or more acids of the foregoing or other types.
- Amines when present can be of any suitable type, including, by way of example, hydroxylamine, monoethanolamine, diethanolamine, triethanolamine, diethyleneglycolamine, N- hydroxylethylpiperazine, N-methyletl anolamine, NN-dimethyletlianolamine, N-ethylethanolamine, NN-diethyletlianolamine, propanolamine, N,N-d ⁇ nemyl ⁇ ropanolamine, N-ethylpropanolamine, NN-dietliylpropanolainine, 4-(2-hydroxyeu ⁇ yl)mo ⁇ pholine, a inoetliylpiperazine, and mixtures including two or more of the foregoing or other amine species.
- Surfactants when optionally employed in compositions of the invention can be of any suitable type, including non-ionic, anionic, cationic, and amphoteric surfactants, and polyelectrolytes including, for example: salts of organic acids; alkane sulfates (e.g., sodium dodecyl sulfate); alkane sulfonates; substituted amine salts (e.g., cetylpyridium bromide); betaines; polyethylene oxide; polyvinyl alcohol; polyvinyl acetate; polyacrylic acid; polyvinyl pyrrolidone; polyethyleneimine; and esters of anhydrosorbitols, such as those commercially available under the trademarks Tween ® and Span ® , as well as mixtures including two or more of the foregoing or other surfactant species.
- alkane sulfates e.g., sodium dodecyl sulfate
- the pH of CMP compositions of the invention can be at any suitable value that is efficacious for the specific polishing operation employed.
- tire pH of the CMP composition can be in a range of from about 2 to about 11 , more preferably in a range of from about 2 to about 7.0, and most preferably in a range of from about 3 to about 6.
- the solvents employed in CMP compositions of the invention can be single component solvents or multicomponent solvents, depending on tire specific application.
- the solvent in tire CMP composition is water.
- the solvent comprises an organic solvent, e.g., methanol, ethanol, propanol, butanol, ethylene glycol, propylene glycol, glycerin, etc.
- the solvent comprises a water-alcohol solution.
- a wide variety of solvent types and specific solvent media can be employed in the general practice of the invention to provide a solvating/suspending medium in which the abrasive is dispersed and in which the other components are incorporated to provide a composition of appropriate character, e.g., of slurry form, for application to the platen of the CMP unit to provide a desired level of polishing of the copper on the wafer substrate.
- the invention provides a CMP composition useful for chemical mechanical polishing of substrates having copper thereon, e.g., copper interconnects, metallization, device structural elements, etc., in which the composition includes hydrogen peroxide, glycine, ATA, abrasive and solvent.
- the CMP composition of tire invention is an aqueous slurry composition, and includes an aqueous medium, abrasive, ATA, H 2 0 2 and glycine, wherein ATA, H 2 0 2 and glycine have the following composition by weight, based on the total weight of the composition:
- the CMP composition comprises the following components by weight, based on the total weight of the composition:
- the CMP compositions of the invention can be readily formulated in a so-called 'day tank' or 'storage tank,' or the CMP composition can be provided as a two-part fonnulation or a multi-part formulation that is mixed at the point of use.
- the advantage of a multi-part formulation resides in its extended shelf life, relative to single-package fomiulations.
- a single package formulation is more susceptible to decomposition and change of its properties over time, in relation to a multi-part formulation, due to the presence of the oxidizer in the single-package CMP composition.
- each single ingredient of the CMP composition is individually delivered to the polishing table for combination at the table with the other ingredients of the formulation, to constitute the CMP composition for use.
- the CMP composition is formulated as a two-part composition in which the first part comprises abrasive and corrosion inliibitor in aqueous medium, and the second part comprises oxidizing agent and chelating agent.
- the CMP composition is formulated as a two-part composition in which tlie first part comprises all components of the composition except the oxidizer, and the second part comprises the oxidizer.
- tlie mixing of ingredients or parts to form the final composition occurs at the point of use, with mixing at the polishing table, polishing belt or tlie like, or in an appropriate container shortly before reaching the polishing table.
- the copper CMP composition of tlie invention can be utilized in a conventional manner in tlie CMP operation, by application of tlie CMP composition to the copper surface on the wafer substrate in a conventional fashion, and polishing of the copper surface can be carried out using a conventional polishing element such as a polishing pad, polishing belt, or the like.
- the CMP composition of tlie invention is advantageously employed to polish surfaces of copper elements on semiconductor substrates, without the occurrence of dishing or other adverse planarization deficiencies in the polished copper, even when significant amounts of copper ions, e.g., Cu 2+ ions, are present in the bulk CMP slurry composition and/or at the copper/CMP slurry interface during CMP processing.
- CMP slurry compositions of tlie invention are highly effective for polishing copper on semiconductor wafer substrates, e.g., polishing of patterned copper wafers.
- the CMP compositions of the invention can be readily prepared by mixing of ingredients in the desired single-package or multi-part formulations, consistent with Hie foregoing discussion herein of single-package and multipart formulations.
- concentrations of the respective ingredients can be widely varied in specific formulations of the CMP composition, in the practice of the invention, and it will be appreciated that tlie CMP composition of the invention can variously and alternatively comprise, consist or consist essentially of any combination of ingredients consistent with the disclosure herein.
- the features and advantages of the invention are more fully shown by the empirical examples and results discussed below. [0040] EXAMPLE 1 [0041]
- Figure 1 is a graph of static etch rates of Cu metal, in Angstroms per minute, as a function of added copper sulfate (CuS0 4 '5H 2 0) concentration, in a H 2 0 2 /Glycine/Cu 2+ system at pH 3.5, with respective formulations incorporating the following ingredients: fonnulation (i) - 5% H 2 0 2 and 1% glycine, formulation (ii) - 5% H 2 0 2 , 1% glycine, and
- Tlie corrosion potentials of ATA-containing solutions were measured, and determined to be constant within a range of from 0.28 to 0.35 volts when measured against a Ag/AgCl-in- saturated-KCl reference electrode.
- slurry compositions were prepared with differing ATA concentrations.
- a first part of tlie CMP formulation was delivered in slurry line 1
- a second part of the CMP formulation was delivered in slurry line
- Tlie first part of the CMP formulation in slurry line 1 contained 2% Nanotek alumina
- aqueous medium deionized water
- This first part of the CMP formulation was delivered to the platen at a flow rate of 125 mill-liters per minute.
- Tlie second part of the CMP formulation in line 2 contained 10% hydrogen peroxide, 2% glycine, and ATA, in deionized water as the solvent, at a pH of 3.5.
- the second part of the formulation was delivered to the platen at a flow rate of 125 milliliters per minute.
- the concentration of ATA in such second part of the formulation was twice the concentration of the ATA desired in the final slurry, since the final slurry was produced by mixing tlie streams from slurry line 1 and slurry line 2 on tlie platen.
- the final CMP composition produced by mixing the streams from slurry lines 1 and 2 therefore had a final composition of 5% hydrogen peroxide, 1% glycine, 1% ⁇ anotek alumina abrasive, and ATA, at a pH of 3.5.
- Figure 2 is a graph of removal rate of copper metal, in Angstroms per minute, as a function of ATA concentration in wt%, based on the total weight of the slurry composition. The results show that the removal rates of copper in a range of about 2200 Angstroms per minute to about 4500 Angstroms per minute were achieved at ATA concentrations in a range of from 0.15 wt.% to 0.45 wt.%, with tlie rate of copper removal decreasing in a generally linear fashion over such ATA concentration range.
- the polishing pad assembly included an ICIOOO polishing pad and a Suba IV subpad (commercially available from Rodel Corporation, Newark, Delaware). Polishing conditions included a 4 psi downforce, table and carrier speed of 90 rpm, and a slurry flow rate of 250 ml/min.
- a Sematech (Austin, TX) 854 patterned wafer was used to investigate dishing of both isolated and array (50% pattern density) copper lines.
- Formulation 1 contained 0.2% BTA, 1% alumina abrasive, 5% hydrogen peroxide and 1% glycine, at a pH of 3.5.
- Formulation 2 contained 0.4% ATA, 2% glycine, 5% hydrogen peroxide and 1% alumina abrasive. The results showed a significant disparity between dishing in the isolated and array lines at endpoint (all Cu metal film was removed from the wafer) when BTA was used as the corrosion inhibitor (Formulation 1).
Abstract
Description
Claims
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US20090137122A1 (en) | 2009-05-28 |
EP1570015A2 (en) | 2005-09-07 |
WO2004053008A3 (en) | 2004-09-02 |
US8236695B2 (en) | 2012-08-07 |
CN1329467C (en) | 2007-08-01 |
US20040108302A1 (en) | 2004-06-10 |
AU2003297590A1 (en) | 2004-06-30 |
TW200417600A (en) | 2004-09-16 |
CN1735671A (en) | 2006-02-15 |
US20070181852A1 (en) | 2007-08-09 |
AU2003297590A8 (en) | 2004-06-30 |
US7361603B2 (en) | 2008-04-22 |
CN101085901A (en) | 2007-12-12 |
EP1570015A4 (en) | 2006-01-25 |
US7300601B2 (en) | 2007-11-27 |
US20050263490A1 (en) | 2005-12-01 |
TWI338711B (en) | 2011-03-11 |
US20050255693A1 (en) | 2005-11-17 |
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