WO2004049423A1

WO2004049423A1 - Method for manufacturing semiconductor device

Info

Publication number: WO2004049423A1
Application number: PCT/JP2003/015022
Authority: WO
Inventors: Unryu Ogawa; Toru Kakuda; Tadashi Terasaki
Original assignee: Hitachi Kokusai Electric Inc.
Priority date: 2002-11-26
Filing date: 2003-11-25
Publication date: 2004-06-10
Also published as: JPWO2004049423A1

Abstract

A method for manufacturing a semiconductor device wherein a nitride film as a capacitor insulating film having a thickness of not less than 30 Å is formed by nitriding a silicon-containing electrode of a semiconductor device using an active species activated through plasma discharge of a gas whose chemical formula includes nitrogen element is disclosed.

Description

Description Method of manufacturing semiconductor device

The present invention relates to a method of manufacturing a semiconductor device, and more particularly to a method of manufacturing a semiconductor device (semiconductor device) using plasma processing, for example, a DRAM (dynamic random access memory), or a system LSI with embedded memory. . Background art

Conventional semiconductor devices (semiconductor devices) such as DRAM (Dynamics)

A semiconductor capacitor insulating film used for a memory cell in a system LSI incorporating a memory or a memory is formed by a nitride film formed by a reduced-pressure gas-phase growth (low-pressure CVD) method. Nitride films formed by the vapor phase growth (low-pressure CVD) method have problems with film quality such as pinholes, and are not suitable for increasingly advanced miniaturization of semiconductor devices. In addition, the low-pressure chemical vapor deposition (low-pressure CVD) method has a problem from the viewpoint of thermal history management of semiconductor devices because the temperature at which an insulating film is formed becomes high and greatly affects the characteristics of semiconductor devices. However, there is an increasing demand for lowering the temperature at which the insulating film is formed.

Recently, in order to solve these problems, T a ₂ 〇 ₅ high dielectric constant material Capacity evening sometimes employed as an insulating film (Japanese Patent Publication Laid-2002- 124650 discloses and Japanese Patent Publication such Gazette JP-A-4-223366).

However, step force Bale in high dielectric constant material, such as T a ₂ 〇 ₅ There is a problem with the Tsu di, the film thickness difference between the top and bottom of the trench is increased, resulting limits the miniaturization of the semiconductor device, in particular, T a ₂ 〇 of ₅ such as high miniaturization trench-shaped portion surface It is becoming difficult to deposit dielectric materials.

Accordingly, a main object of the present invention is to form a capacitive insulating film having excellent step coverage at a low temperature, and particularly to forming a capacitive insulating film having excellent step coverage even in the treatment of a trench-shaped surface. It is an object of the present invention to provide a method of manufacturing a semiconductor device suitable for miniaturization of semiconductor devices. Disclosure of the invention

According to a first aspect of the present invention,

The silicon-containing electrode of a semiconductor device is nitrided using active species activated by plasma discharge of a gas containing nitrogen element in its chemical formula, resulting in a capacitor insulating film with a thickness of 3 OA or more. A method of manufacturing a semiconductor device forming a nitride film as a semiconductor device is provided. According to a second aspect of the present invention,

An electrode containing silicon of a semiconductor device is oxidized using active species activated by plasma discharge of a gas containing an oxygen element in the chemical formula, and then a gas containing a nitrogen element in the chemical formula is plasma-treated. By nitriding the oxidized electrode using active species activated by discharging, an oxide film, an oxynitride film, and a nitride film are formed on the electrode surface, and at least oxynitridation is performed. Provided is a method of manufacturing a semiconductor device in which a capacitor insulating film is formed by forming a total thickness of a film and a nitride film to be 3 OA or more. BRIEF DESCRIPTION OF THE FIGURES

1A, 1B, and 1C are schematic longitudinal sectional views showing a semiconductor device manufactured by a method of manufacturing a semiconductor device according to a preferred embodiment of the present invention.

FIG. 2 shows a modified magnetron plasma processing apparatus (hereinafter, referred to as an MMT apparatus) for performing the method of manufacturing a semiconductor device according to a preferred embodiment of the present invention. FIG.

FIG. 3 is a circuit diagram for explaining a high-frequency circuit of the MMT device used in the method for manufacturing a semiconductor device according to the preferred embodiment of the present invention.

FIG. 4 is a diagram showing a relationship between a silicon nitride film thickness and a processing time obtained by performing a method of manufacturing a semiconductor device according to a preferred embodiment of the present invention. BEST MODE FOR CARRYING OUT THE INVENTION

According to a preferred embodiment of the present invention,

The silicon-containing electrode of a semiconductor device is nitrided using active species activated by plasma discharge of a gas containing nitrogen element in its chemical formula, resulting in a capacitor insulating film with a thickness of 3 OA or more. A method of manufacturing a semiconductor device forming a nitride film as a semiconductor device is provided.

As described above, when the nitride film is formed by the plasma processing, the processing temperature is lowered, the step coverage is improved, and the film thickness uniformity is improved regardless of the pattern shape of the semiconductor device. Further, by setting the thickness of the nitride film to 30 A or more, it becomes possible to satisfy electric characteristics such as leak current and charge-up of the capacitor insulating film. As a result, the power consumption of the semiconductor DRAM can be reduced, and the battery life can be prolonged in the case of a mobile phone or the like.

Preferably, plasma discharge of gas containing oxygen element in its chemical formula The surface of the nitride film is oxidized using the activated species activated in this way to form a capacitor insulating film. By doing so, the capacitor insulating film can be formed more suitably.

According to another preferred form of the invention,

An electrode containing silicon of a semiconductor device is oxidized using active species activated by plasma discharge of a gas containing an oxygen element in the chemical formula, and then a gas containing a nitrogen element in the chemical formula is plasma-treated. By nitriding the oxidized electrode using active species activated by discharging, an oxide film, an oxynitride film, and a nitride film are formed on the electrode surface, and at least oxynitridation is performed. Provided is a method for manufacturing a semiconductor device in which a total thickness of a film and a nitride film is 3 OA or more to form a capacity insulating film. By doing so, the capacity insulating film can be formed more suitably.

In this case, preferably, an electrode containing silicon of the semiconductor device is oxidized using active species activated by plasma discharge of a gas containing oxygen in its chemical formula, and then nitrogen is added. By nitriding the oxidized electrode using active species activated by plasma discharge of a gas contained in the chemical formula, an oxide film and a nitride film are formed on the electrode surface. A capacitor insulating film is formed by forming a nitride film and a nitride film having a total film thickness of 3 OA or more.

Preferably, each of the above plasma treatments includes a processing chamber for processing a substrate, a substrate support for supporting the substrate in the processing chamber, an electrode disposed around the processing chamber, preferably a cylindrical electrode, and a magnetic field line forming means. This is performed by a substrate processing apparatus having: Next, preferred embodiments of the present invention will be described in more detail with reference to the drawings. I do.

1A, 1B, and 1C show schematic partial cross-sectional views of a semiconductor device manufactured by a method for manufacturing a semiconductor device according to a preferred embodiment of the present invention.

First, in the semiconductor device shown in FIG. 1A, a trench on which a doped polysilicon film or a doped bare silicon region is formed is formed on a semiconductor silicon wafer to form a trench-shaped lower polysilicon electrode. Alternatively, the electrode 1 of the semiconductor device which is a doped bare silicon electrode is formed. Thereafter, the surface of the electrode 1 is nitrided by plasma treatment. That is, the electrode 1 is nitrided by using a gas containing nitrogen element in its chemical formula, for example, an active species activated by plasma discharge of nitrogen gas. By this nitriding treatment, a nitride film (SiN film) 2 is formed. When the thickness of the nitride film 2 is 3 O A or more, the electrical characteristics of the capacitor insulating film of the semiconductor device can be satisfied. In particular, it is effective in increasing the electric capacity. Then, the upper electrode 3 is formed using a doped polysilicon film, and a semiconductor device is formed.

In the semiconductor device shown in FIG. 1B, the surface of the nitride film 2 of the semiconductor device shown in FIG. 1A is further treated with a gas containing an oxygen element in its chemical formula, for example, an activated species activated by plasma discharge of oxygen gas. Use and oxidize. When a nitride film of, for example, 35 A to 4 OA is oxidized in this way, the surface is almost an oxide film (SiO ₂ film), and a portion deeper than this oxide film is an oxynitride film (SiO ON film). As a result, the oxygen concentration in the oxynitride film gradually decreases in the depth direction, and the oxide film and the oxynitride film are formed at 5-1 OA, and the nitrided portion is formed deeper than the oxynitride film. It becomes a film (SiN film) and is formed about 3 OA. A nitride film has the characteristic of increasing the electric capacity, an oxide film has a characteristic of reducing the leak current, and an oxynitride film has an intermediate property between the nitride film and the oxide film. In this oxynitride film, the characteristics are closer to those of the oxide film when the oxygen concentration is higher, and are closer to those of the nitride film when the nitrogen concentration is higher. In the present embodiment, the oxidation treatment is performed while adjusting the amount of oxidation after the nitride film is mainly formed, so that it is suitable for manufacturing a semiconductor device for the purpose of increasing the electric capacity. Here, the oxidation concentration refers to the number of oxygen atoms per unit volume in the oxynitride film as the total number of atoms per unit volume of the oxynitride film (the total number of atoms of silicon, oxygen, and nitrogen; 6. 6 X 1 0 ^{2 2} ). In addition, the nitrogen concentration refers to the number of nitrogen atoms per unit volume in the oxynitride film as the total number of atoms per unit volume of the oxynitride film (the total number of atoms of silicon, oxygen, and nitrogen, 6.6 X It is the value divided by 1 0 ^{2 2} ). Next, the upper electrode 3 is formed using a doped polysilicon film to form a semiconductor device. In the semiconductor device shown in FIG. 1C, a doped silicon film or a doped bare silicon film is formed on a semiconductor silicon wafer. A trench in which a region is formed is formed, and an electrode 1 of the semiconductor device, which is a trench-shaped doped polysilicon lower electrode or a doped bare silicon electrode, is formed. After that, the surface of the electrode 1 is oxidized by plasma treatment, and is then nitrided by plasma treatment. That is, the electrode 1 of the semiconductor device is oxidized using a gas containing oxygen element in its chemical formula, for example, an active species activated by plasma discharge of oxygen gas. Next, the surface of the oxidized electrode 1 is nitrided by using a gas containing a nitrogen element in its chemical formula, for example, a chemical species activated by plasma discharge of nitrogen gas. When the oxide film of 4 OA is nitrided, it becomes a nitride film (SiN film) from the surface to about 5 to 1 OA, and an oxynitride film (SiSN film) at a depth deeper than this nitride film. In the oxynitride film, the nitrogen concentration gradually decreases in the depth direction, and this oxynitride film is formed at about 20 to 25 A. The total thickness of the monolayer and the oxynitride film with at least 3 OA or more, further at deeper than the oxynitride film, oxide film (S I_〇 ₂ film) is approximately 5

1 O A is formed. In the present embodiment, since the nitriding treatment is performed while adjusting the amount of nitriding after the oxide film is mainly formed, it is suitable for manufacturing a semiconductor device for the purpose of reducing the leak current. Then, the upper electrode 3 is formed using a doped polysilicon film to form a semiconductor device. FIG. 2 shows the deformed magnet used to manufacture the semiconductor device shown in FIGS. 1A to 1C. A ton-type plasma processing apparatus (Modified Magnetic Typed Processing System (MMT apparatus) 24) is shown.The MMT apparatus 24 is a vacuum vessel 2 constituting a processing chamber 26. The vacuum container 28 includes an upper container 30 and a lower container 32 which are vertically joined to each other The upper container 30 is made of a ceramic such as alumina or quartz. 32 is made of metal such as aluminum and is grounded, and the periphery of the upper container 30 is covered with a cover 34. The upper container 30 is cylindrical with a dome-shaped ceiling. On the ceiling, an upper cover 36 and a shield plate 38 are formed. A diffusion chamber 40 is formed between 36 and the shower plate 38. The upper cover 36 is made of metal such as aluminum and is grounded.The shower plate 38 is made of quartz or alumina. In addition, an inlet 42 for introducing a processing gas is formed in the upper lid 36, and a number of nozzles 44 are formed in the shower plate 38. For example, two kinds of processing gases introduced from 42 are mixed and diffused in the diffusion chamber 40 and supplied to the processing chamber 26 from the nozzle 44 of the shower plate 38.

In the processing chamber 26, a susceptor 46 as a substrate support for supporting the substrate W is disposed. This susceptor has a heater for heating the substrate W. Evening is set up. Further, the lower container 32 is provided with an exhaust port 48, and the processing gas in the processing chamber 26 is exhausted from the exhaust port 48.

The cylindrical electrode 50 is disposed around the processing chamber 26, that is, on the outer periphery of the upper container 30 with a small interval of about 2 mm from the upper container 30. The cylindrical electrode 50 is connected to a high-frequency power supply 54 via a matching device 52. The high-frequency power supply 54 generates high-frequency power having a frequency of, for example, 13.56 MHz, and the magnitude of the power is adjusted according to a control signal from the control device 56. The magnetic field line forming means 58 is composed of, for example, two permanent magnets 60 and 62 formed in a ring shape, and is arranged around the processing chamber 26. The two permanent magnets 60 and 62 are magnetized in opposite directions in the radial direction, and extend in the processing chamber 26 from one permanent magnet 60 toward the center and the other permanent magnet 62 Are formed.

A high frequency circuit (variable impedance circuit) 64 is connected to the susceptor 46 described above. The high-frequency circuit 64 can adjust the susceptor impedance according to the control signal from the control device 56 described above.

The high-frequency circuit 64 is a circuit in which a coil and a capacitor are arranged in series or in parallel. The impedance of the high-frequency circuit 64 can be adjusted by controlling the inductance of the coil divided by the capacitance of the capacitor. The potential of the substrate W can be controlled through the evening.

FIG. 3 shows an internal circuit of the high-frequency circuit 64 described above. The circuit does not include a power supply and consists only of passive elements. Specifically, the coil 1 2 1 and the capacitor 1 2 3 are connected in series. The coil 122 is provided with several terminals 122 so that the inductance can be varied. Objective Terminals 1 and 2 are arbitrarily short-circuited to control the number of coil patterns so that the inductance value can be obtained. A variable capacitor capable of linearly changing its own capacitance is used for the capacitor 123. By adjusting at least one of the coil 12 1 and the capacitor 12 3, the high-frequency circuit 64 is adjusted to a desired impedance value, so that the potential of the substrate W can be controlled. As described above, the impedance of the high-frequency circuit 64 can be changed by adjusting at least one of the variable coil and the variable capacitor. However, even when a fixed coil and a fixed capacitor are used, the impedance is reduced. Of course, two or more circuits different from each other may be switched.

In the MMT device 24 used in the preferred embodiment of the present invention, a magnetron discharge is generated under the influence of the magnetic field of the permanent magnets 60 and 62, and the electric charge is trapped in the space above the substrate W to increase the magnetron discharge. A density plasma is generated. Then, the surface of the substrate W on the susceptor 46 is subjected to a plasma oxidation treatment or a plasma nitridation treatment by the generated high-density plasma. The surface treatment is started and stopped by applying and stopping high-frequency power. When oxidizing or nitriding the surface of the substrate W or the surface of the underlying film, the high-frequency circuit 64 interposed between the susceptor 46 and the ground is controlled in advance to a desired impedance value. When the high-frequency circuit 64 is adjusted to a desired impedance value, the potential of the substrate W is controlled thereby, and an oxidized film or a nitrided film having a desired film thickness and in-plane film thickness uniformity can be formed.

In a parallel plate electrode type plasma apparatus that controls the output value of the high frequency power and the control of the supply of the bias power, the film thickness cannot be controlled by the impedance control by the MMT apparatus as described above. In principle, it is possible to form an oxide film or nitride film of 3 nm or more by increasing the susceptor voltage even in a parallel plate electrode type plasma device. However, parallel plate electrode type plasma In the device, the discharge voltage and the susceptor voltage cannot be controlled independently. Therefore, when the susceptor voltage is increased, a strong electric field is applied to the substrate, so that the film quality is deteriorated due to plasma damage and the film thickness uniformity is also deteriorated.

On the other hand, in the MMT device of the present embodiment, when a high frequency is applied to the cylindrical discharge electrode 50, the upper lid 36 grounded to the discharge electrode 50 and the high frequency grounded An electric field is generated between the susceptor 46 connected to the circuit 64 and the grounded lower container 32 to cause discharge and generate plasma. The generated plasma diffuses along the lines of magnetic force and spreads over the entire surface of the substrate W. In addition, high-energy electrons are trapped by strong lines of magnetic force on the surface of the cylindrical discharge electrode, which enables efficient generation of high-density plasma even at low pressure. Plasma can be created uniformly. As described above, the electric field is applied by the discharge electrode, and the electric charge is trapped by the lines of magnetic force, thereby increasing the plasma density as compared with the parallel plate electrode type plasma apparatus. Further, by varying the inductance of the coil of the high-frequency circuit 64 connected to the susceptor 46 or the capacitance of the capacitor, the high-frequency impedance of the high-frequency circuit 64 is controlled to reduce the potential of the substrate W. It is possible to control the plasma incident energy to the substrate W. In this way, the plasma injection energy is controlled by controlling the susceptor potential, which can be controlled independently of the plasma generation, rather than the voltage of the discharge electrode that generates the plasma. Therefore, the quality of the formed film can be well maintained.

As described above, the MMT device of the present embodiment can control the energy of ions incident on the substrate and has less plasma damage to the substrate than other plasma devices.

Next, the operation of the MMT device 24 will be described. First, a half as substrate W The conductor wafer is placed on the susceptor 46, and the gas in the vacuum vessel 28 is exhausted from the exhaust port 48 to make the vacuum vessel 28 vacuum. Next, the substrate W is heated by a heater (not shown) provided on the susceptor 46 so that the temperature of the substrate W is adjusted to a temperature suitable for the processing conditions of the substrate W, for example, in a temperature range from room temperature to 400 ° C. Adjust the temperature of the. Next, the processing gas is introduced from the inlet 42. The processing gas introduced from the inlet 42 is diffused in the diffusion chamber 40 and supplied to the processing chamber 26 from the nozzle 44 of the shower plate 38. At the same time, high-frequency power is supplied from the high-frequency power supply 54 to the cylindrical electrode 50. Then, an electric field is generated between the cylindrical electrode 50 and the upper lid 36 grounded, the susceptor 46 connected to the grounded high-frequency circuit 64, and the lower vessel 32 grounded. Discharge occurs and plasma is formed. Further, in the processing chamber 26, the magnetic field lines are formed by the magnetic field line forming means 58, and the plasma discharge spreads to the center of the processing chamber 26 by the magnetic field lines, and the impedance is adjusted by adjusting the high frequency circuit 64. The substrate W is processed by adjusting the potential of the susceptor 46 (substrate W), thereby adjusting the amount of plasma processing on the substrate W. After a lapse of a predetermined time, the supply of high-frequency power from the high-frequency power supply 54 is stopped, the gas in the vacuum vessel 28 is exhausted from the exhaust port 48, and the substrate W on the susceptor 46 is taken out of the processing chamber 26. The process ends.

In the case of manufacturing the semiconductor device shown in FIG. 1A, FIG. 1B, or FIG. 1C described above, the semiconductor device is treated on the substrate W by processing the semiconductor silicon wafer 8 as the substrate W. It is formed. In the processing of the capacitor insulating film, the pressure in the vacuum vessel 28 is controlled to a predetermined pressure using the MMT apparatus shown in FIG. 2, and the temperature of the substrate W is controlled in a temperature range from room temperature to 400 ° C. Then, the flow rate of nitrogen or oxygen is controlled and introduced into the processing chamber 26 from the inlet 42, and the frequency and amount of the high-frequency power supplied to the cylindrical electrode 50 are adjusted, and the magnetic field line forming means 5 Set the magnetic strength of 8 and set the electric potential of The processing conditions are set by, for example, controlling.

Standard process conditions are as follows: For nitriding, temperature: 0 to 400 ° C, pressure: 2 to 30 Pa, process gas: N ₂ , flow rate: 100 to 500 sccm, RF power: 800 to 1500 W , Vp p: a 250 to 800 V, in the case of oxidation, temperature: 0 to 400 ° (:, pressure: 2 to 30 P a, process gas: 0 _2, flow rate: 100 to 500 sc cm, RF Power 500 to 1500 W, Vpp: 250 to 800 V. Here, Vpp refers to the difference between the maximum value and the minimum value of the susceptor potential for mounting the substrate.

These process conditions determine the critical film thickness (self-limit) of the nitride, oxide, and oxynitride films, and the processing does not proceed beyond the critical film thickness even if the processing time is extended. Therefore, if the processing time is adjusted so as to reach the limit film thickness, pattern dependency is eliminated, and a uniform film thickness can be obtained over the entire substrate surface regardless of the substrate surface shape. In particular, when the miniaturization of the semiconductor device is advanced, even if the electrode of the semiconductor device has a trench shape, the bottom portion 5 and the side portion 6 of the trench can be processed to have a uniform film thickness.

FIG. 4 shows the processing time dependence of the thickness of the nitride film formed on the silicon-based; IS surface using the MMT device 24. The processing conditions are as follows: discharge power 1000 W, pressure 30 Pa, discharge power 250 W, pressure 30 Pa, and discharge power 250 W, pressure 80 Pa. At a processing temperature of room temperature, the silicon surface can be nitrided in the range of 10-50 A while maintaining in-plane uniformity of ± 2% or less. In addition, it shows that the surface can be nitrided without pattern dependency because there is a self-limit of the film thickness to be nitrided depending on the process conditions.

Thus, the use of MMT device 24, as compared with the CVD film of Ta ₂ 0 _5, even for even pattern of more miniaturized high § scan Bae transfected ratio A film having a uniform thickness can be formed, and, for example, in the case of performing a nitriding treatment, the thickness of the nitride film can be increased.

For example, in the case of the CVD film of the T a ₂ 0 ₅ is the difficulty associated with the ratio of the depth / width exceeds 2 0 times or more, by using the MM T unit 2 4, in an aspect ratio greater than the corresponding For example, it can be applied to trenches having a width of less than 0.1 and a depth of 7 m or more, and trenches having an aspect ratio of about 100 or more.

For example, in order to manufacture the semiconductor device of FIG. 1C, a first process of oxidizing the substrate W by switching or adjusting the high-frequency impedance of the substrate support (susceptor) 46, It is preferable that the second process of nitriding the oxide film formed by the first process with an active species obtained by activating nitrogen gas by plasma is performed continuously.

Although the first process can be performed using only oxygen, it is preferable to perform the first process by introducing a large amount of krypton and a small amount of oxygen into the treatment chamber. In this first process, it is necessary to form a high-quality oxide film, so that only the monoatomic radical of oxygen is generated. r A large amount of gas is injected with a small amount of oxygen to generate plasma, and oxygen radicals oxidize a substrate made of, for example, silicon. For this purpose, the high-frequency impedance of the substrate support is adjusted so that the potential of the plasma generated by the cylindrical electrode and the magnetic field line forming means and the potential of the substrate support are matched. As a result, entry of ions into the substrate to be processed on the substrate support can be prevented as much as possible, and oxidation can be performed with a large amount of oxygen radicals in the plasma.

On the other hand, in the second process, when nitriding, although the nitrogen excitation energy is low, nitrogen atoms are incorporated into the oxide film so as to become Si ON. For this reason, N ₂ must be completely dissociated. The activation energy for this dissociation is very high. Therefore, contrary to the first process, the high-frequency impedance of the substrate support is adjusted by inverting the phase of the potential between the plasma and the substrate support so that the plasma resonates with the substrate support. Maximize ion incidence on

In the second process, it is preferable to further treat the processing gas with He gas. When He gas is introduced, the dissociation energy of He is very high, and by making it a mixed gas with nitrogen, it can be maintained at a higher state than the excitation of N ₂ , and assists in the atomization of nitrogen. it can. Industrial applicability

As described above, according to the present invention, it is possible to form a capacitor insulating film having a low temperature and excellent step coverage, and particularly to form a capacitor insulating film having an excellent step coverage even when treating a trench-shaped surface. In monkey.

As a result, the present invention can be used particularly favorably for the production of miniaturized semiconductor memories.

The entire disclosure of Japanese Patent Application No. 2 0 2-3 4 1 9 3 3 filed on January 26, 2001, including the description, claims, drawings and abstract, is as follows. , Which are incorporated here as they are. While various exemplary embodiments have been shown and described, the invention is not limited to those embodiments. Therefore, the scope of the present invention is limited only by the following claims.

Claims

The scope of the claims

1. Nitrogen treatment of silicon-containing electrodes of semiconductor devices using active species activated by plasma discharge of a gas containing nitrogen element in its chemical formula, thereby insulating capacitors with a thickness of 3 OA or more. A method for manufacturing a semiconductor device in which a nitride film is formed as a film.

2. The method according to claim 1, wherein the surface of the nitride film is oxidized using active species activated by plasma discharge of a gas containing oxygen element in its chemical formula to form a capacitance insulating film. A method for manufacturing a semiconductor device.

3. Oxidation of the silicon-containing electrode of the semiconductor device using active species activated by plasma discharge of a gas containing oxygen in its chemical formula, and then a gas containing nitrogen in its chemical formula Nitriding the oxidized electrode using active species activated by plasma discharge of the oxidized film, forming an oxide film, an oxynitride film, and a nitride film on the electrode surface; A method of manufacturing a semiconductor device in which a capacitor insulating film is formed by forming a total thickness of a nitride film to be 3 OA or more.

4. The method for manufacturing a semiconductor device according to claim 1, wherein the electrode has a groove shape.