WO2004042780A3 - Flexible semiconductor device and method of manufacturing the same - Google Patents

Flexible semiconductor device and method of manufacturing the same Download PDF

Info

Publication number
WO2004042780A3
WO2004042780A3 PCT/IB2003/004925 IB0304925W WO2004042780A3 WO 2004042780 A3 WO2004042780 A3 WO 2004042780A3 IB 0304925 W IB0304925 W IB 0304925W WO 2004042780 A3 WO2004042780 A3 WO 2004042780A3
Authority
WO
WIPO (PCT)
Prior art keywords
manufacturing
same
semiconductor device
flexible semiconductor
present
Prior art date
Application number
PCT/IB2003/004925
Other languages
French (fr)
Other versions
WO2004042780A2 (en
Inventor
Ronald Dekker
Theodorus M Michielsen
Original Assignee
Koninkl Philips Electronics Nv
Ronald Dekker
Theodorus M Michielsen
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Koninkl Philips Electronics Nv, Ronald Dekker, Theodorus M Michielsen filed Critical Koninkl Philips Electronics Nv
Priority to AU2003274568A priority Critical patent/AU2003274568A1/en
Priority to JP2004549476A priority patent/JP2006508379A/en
Priority to EP03758543A priority patent/EP1573800A2/en
Priority to US10/561,532 priority patent/US8067802B2/en
Publication of WO2004042780A2 publication Critical patent/WO2004042780A2/en
Publication of WO2004042780A3 publication Critical patent/WO2004042780A3/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/133305—Flexible substrates, e.g. plastics, organic film
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/13613—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit the semiconductor element being formed on a first substrate and thereafter transferred to the final cell substrate
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136227—Through-hole connection of the pixel electrode to the active element through an insulation layer
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/165—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on translational movement of particles in a fluid under the influence of an applied field
    • G02F1/166—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on translational movement of particles in a fluid under the influence of an applied field characterised by the electro-optical or magneto-optical effect
    • G02F1/167—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on translational movement of particles in a fluid under the influence of an applied field characterised by the electro-optical or magneto-optical effect by electrophoresis
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F2202/00—Materials and properties
    • G02F2202/10—Materials and properties semiconductor
    • G02F2202/105—Materials and properties semiconductor single crystal Si
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/6835—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used as a support during build up manufacturing of active devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68363—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used in a transfer process involving transfer directly from an origin substrate to a target substrate without use of an intermediate handle substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1259—Multistep manufacturing methods
    • H01L27/1262—Multistep manufacturing methods with a particular formation, treatment or coating of the substrate
    • H01L27/1266—Multistep manufacturing methods with a particular formation, treatment or coating of the substrate the substrate on which the devices are formed not being the final device substrate, e.g. using a temporary substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/301—Details of OLEDs
    • H10K2102/311—Flexible OLED
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/84—Passivation; Containers; Encapsulations
    • H10K50/841—Self-supporting sealing arrangements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/84—Passivation; Containers; Encapsulations
    • H10K50/844—Encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays

Abstract

The rollable device of the invention comprises a substrate of an insulating material (12) with apertures (15) extending from a first to a second side. On the first side switching elements (13) are present, as well as interconnect lines and the like, covered by a coating of organic material (3). On the second side a functional layer is present. Examples of such functional layers include capacitors, antennas and particularly electro-optical layers. Thus, with a rollable display that may include an antenna and a driver circuit is obtained.
PCT/IB2003/004925 2002-11-08 2003-11-04 Flexible semiconductor device and method of manufacturing the same WO2004042780A2 (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
AU2003274568A AU2003274568A1 (en) 2002-11-08 2003-11-04 Flexible semiconductor device and method of manufacturing the same
JP2004549476A JP2006508379A (en) 2002-11-08 2003-11-04 Plastic device and method for manufacturing plastic device
EP03758543A EP1573800A2 (en) 2002-11-08 2003-11-04 Flexible semiconductor device and method of manufacturing the same
US10/561,532 US8067802B2 (en) 2002-11-08 2003-11-04 Flexible device and method of manufacturing the same

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP02079697 2002-11-08
EP02079697.5 2002-11-08

Publications (2)

Publication Number Publication Date
WO2004042780A2 WO2004042780A2 (en) 2004-05-21
WO2004042780A3 true WO2004042780A3 (en) 2005-05-12

Family

ID=32309427

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/IB2003/004925 WO2004042780A2 (en) 2002-11-08 2003-11-04 Flexible semiconductor device and method of manufacturing the same

Country Status (7)

Country Link
US (2) US8067802B2 (en)
EP (1) EP1573800A2 (en)
JP (1) JP2006508379A (en)
KR (1) KR20050084986A (en)
CN (1) CN1711633A (en)
AU (1) AU2003274568A1 (en)
WO (1) WO2004042780A2 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103620681A (en) * 2011-06-27 2014-03-05 薄膜电子有限公司 Short circuit reduction in an electronic component comprising a stack of layers arranged on a flexible substrate
CN103650046A (en) * 2011-06-27 2014-03-19 薄膜电子有限公司 Short circuit reduction in a ferroelectric memory cell comprising a stack of layers arranged on a flexible substrate

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8278828B1 (en) 2001-10-23 2012-10-02 Imaging Systems Technology Large area organic LED display
US7714514B1 (en) * 2001-10-23 2010-05-11 Imaging Systems Technology Large area organic electroluminescent display using bimorph MEMS devices
US8698706B1 (en) 2001-10-23 2014-04-15 Imaging Systems Technology, Inc. Organic electroluminescent display device driving method and apparatus
US7592239B2 (en) 2003-04-30 2009-09-22 Industry University Cooperation Foundation-Hanyang University Flexible single-crystal film and method of manufacturing the same
EP1494167A1 (en) 2003-07-04 2005-01-05 Koninklijke Philips Electronics N.V. Flexible semiconductor device and identification label
WO2005106934A1 (en) * 2004-04-28 2005-11-10 Iufc-Hyu Flexible electro-optical apparatus and method for manufacturing the same
US7642612B2 (en) * 2005-06-17 2010-01-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US7612457B2 (en) * 2007-06-21 2009-11-03 Infineon Technologies Ag Semiconductor device including a stress buffer
TWI518895B (en) 2013-05-21 2016-01-21 財團法人工業技術研究院 Thin-film device
KR102151247B1 (en) 2013-11-11 2020-09-03 삼성디스플레이 주식회사 Method of manufacturing flexible display panel and method of manufacturing flexible display apparatus
KR102107456B1 (en) * 2013-12-10 2020-05-08 삼성디스플레이 주식회사 Flexible display device and method for manufacturing the same
CN103645215B (en) * 2013-12-12 2017-01-11 中国科学院微电子研究所 Sensor module based on flexible substrate
KR20150077969A (en) * 2013-12-30 2015-07-08 삼성디스플레이 주식회사 Methods of preparing flexible substrates, flexible display devices and methods of manufacturing flexible display devices
CN104821975B (en) 2015-05-25 2018-10-30 京东方科技集团股份有限公司 A kind of flexible display apparatus and its pedestal
KR102025924B1 (en) 2015-07-31 2019-09-26 삼성전자주식회사 Display apparatus
KR102288354B1 (en) * 2015-08-10 2021-08-11 삼성디스플레이 주식회사 Method for manufacturing flexible display apparatus
CN107369653A (en) * 2016-05-13 2017-11-21 北京中电网信息技术有限公司 A kind of system-in-a-package method of high interference component, structure and separation array structure

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1090668A (en) * 1996-09-13 1998-04-10 Toshiba Corp Display device
JPH11274733A (en) * 1998-03-18 1999-10-08 Toshiba Corp Interconnector and liquid crystal display
US6127199A (en) * 1996-11-12 2000-10-03 Seiko Epson Corporation Manufacturing method of active matrix substrate, active matrix substrate and liquid crystal display device
JP2001044445A (en) * 1995-02-16 2001-02-16 Semiconductor Energy Lab Co Ltd Thin-film integrated circuit manufacturing method
US20020030189A1 (en) * 2000-09-14 2002-03-14 Akira Ishikawa Semiconductor device and manufacturing method thereof
US20020070910A1 (en) * 2000-12-12 2002-06-13 Nec Corporation Mobile terminal device, content distribution system, content distribution method, and program for executing method thereof
WO2002073572A2 (en) * 2001-03-13 2002-09-19 E Ink Corporation Apparatus for displaying drawings

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4729061A (en) * 1985-04-29 1988-03-01 Advanced Micro Devices, Inc. Chip on board package for integrated circuit devices using printed circuit boards and means for conveying the heat to the opposite side of the package from the chip mounting side to permit the heat to dissipate therefrom
JP3597305B2 (en) * 1996-03-05 2004-12-08 株式会社半導体エネルギー研究所 Liquid crystal display device and manufacturing method thereof
JP3134866B2 (en) * 1999-02-05 2001-02-13 日本電気株式会社 Liquid crystal display device and manufacturing method thereof
JP2002040486A (en) * 2000-05-19 2002-02-06 Seiko Epson Corp Electrooptic device and its manufacturing method, and electronic equipment
KR100586241B1 (en) * 2000-10-28 2006-06-02 엘지.필립스 엘시디 주식회사 An array substrate for liquid crystal display device and method of manufacturing there of
DE10122324A1 (en) 2001-05-08 2002-11-14 Philips Corp Intellectual Pty Flexible integrated monolithic circuit
US6724794B2 (en) * 2001-06-29 2004-04-20 Xanoptix, Inc. Opto-electronic device integration
JP2003338193A (en) * 2002-05-21 2003-11-28 Mitsubishi Electric Corp Semiconductor memory module
KR20050048664A (en) 2002-10-04 2005-05-24 코닌클리즈케 필립스 일렉트로닉스 엔.브이. Apparatus with display
US20040245538A1 (en) * 2003-06-06 2004-12-09 Xiaolin Wang Double sided optoelectronic integrated circuit

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001044445A (en) * 1995-02-16 2001-02-16 Semiconductor Energy Lab Co Ltd Thin-film integrated circuit manufacturing method
JPH1090668A (en) * 1996-09-13 1998-04-10 Toshiba Corp Display device
US6127199A (en) * 1996-11-12 2000-10-03 Seiko Epson Corporation Manufacturing method of active matrix substrate, active matrix substrate and liquid crystal display device
JPH11274733A (en) * 1998-03-18 1999-10-08 Toshiba Corp Interconnector and liquid crystal display
US20020030189A1 (en) * 2000-09-14 2002-03-14 Akira Ishikawa Semiconductor device and manufacturing method thereof
US20020070910A1 (en) * 2000-12-12 2002-06-13 Nec Corporation Mobile terminal device, content distribution system, content distribution method, and program for executing method thereof
WO2002073572A2 (en) * 2001-03-13 2002-09-19 E Ink Corporation Apparatus for displaying drawings

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
PATENT ABSTRACTS OF JAPAN vol. 1998, no. 09 31 July 1998 (1998-07-31) *
PATENT ABSTRACTS OF JAPAN vol. 2000, no. 01 31 January 2000 (2000-01-31) *
PATENT ABSTRACTS OF JAPAN vol. 2000, no. 19 5 June 2001 (2001-06-05) *

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103620681A (en) * 2011-06-27 2014-03-05 薄膜电子有限公司 Short circuit reduction in an electronic component comprising a stack of layers arranged on a flexible substrate
CN103650046A (en) * 2011-06-27 2014-03-19 薄膜电子有限公司 Short circuit reduction in a ferroelectric memory cell comprising a stack of layers arranged on a flexible substrate
CN103620681B (en) * 2011-06-27 2016-11-02 薄膜电子有限公司 There is lateral dimension and change electronic unit and the production method thereof absorbing cushion

Also Published As

Publication number Publication date
AU2003274568A8 (en) 2004-06-07
CN1711633A (en) 2005-12-21
US20120038032A1 (en) 2012-02-16
US8067802B2 (en) 2011-11-29
JP2006508379A (en) 2006-03-09
KR20050084986A (en) 2005-08-29
WO2004042780A2 (en) 2004-05-21
EP1573800A2 (en) 2005-09-14
AU2003274568A1 (en) 2004-06-07
US20060186512A1 (en) 2006-08-24

Similar Documents

Publication Publication Date Title
WO2004042780A3 (en) Flexible semiconductor device and method of manufacturing the same
WO2004006633A3 (en) Integrated circuit including field effect transistor and method of manufacture
AU2003298447A1 (en) Electrical connection of optoelectronic devices
TW200715384A (en) Methods for manufacturing RFID tags and structures formed therefrom
WO2001048870A3 (en) Interconnect for microelectronic structures with enhanced spring characteristics
TW200715514A (en) Semiconductor chip, display panel using the same, and methods of manufacturing semiconductor chip and display panel using the same
DE602008006499D1 (en) Radio frequency identification tag device for metallic products
WO2006056648A3 (en) Electronics module and method for manufacturing the same
EP2256785A3 (en) Electronic Device
WO2002016477A3 (en) Organosilicate resins as hardmasks for organic polymer dielectrics in fabrication of microelectronic devices
WO2002063656A3 (en) Chemical monolayer and micro-electronic junctions and devices containing same
WO2003092045A3 (en) Method for producing an electrical circuit
TW200519179A (en) Electrode, method for forming an electrode, thin-film transistor, electronic circuit, organic electroluminescent element, display, and electronic equipment
EP1333497A3 (en) Circuit substrate, electro-optical device and electronic appliances
WO2004051791A3 (en) Multi-layer capacitive coupling in phased array antennas
AU2003209595A1 (en) Active matrix electroluminescent display devices, and their manufacture
WO2005045947A3 (en) Segmented organic light emitting device
EP1553630A4 (en) Modular board device and high frequency module and method for producing them
WO2010145907A3 (en) Methods and systems for fabrication of mems cmos devices
WO2004075604A3 (en) Organic electroluminescent device and method for fabricating the same
WO2001048858A3 (en) Low sar broadband antenna assembly
WO2003081638A3 (en) Method for conductance switching in molecular electronic junctions
WO2005096433A3 (en) Embedded planar antenna and pertaining tuning method
WO2003049194A1 (en) Functional line and transistor array using it
DE60322810D1 (en) Array antenna with parallel-fed, near-coupled, cavity-based patch antenna elements

Legal Events

Date Code Title Description
AK Designated states

Kind code of ref document: A2

Designated state(s): AE AG AL AM AT AU AZ BA BB BG BR BY BZ CA CH CN CO CR CU CZ DE DK DM DZ EC EE EG ES FI GB GD GE GH GM HR HU ID IL IN IS JP KE KG KP KR KZ LC LK LR LS LT LU LV MA MD MG MK MN MW MX MZ NI NO NZ OM PG PH PL PT RO RU SC SD SE SG SK SL SY TJ TM TN TR TT TZ UA UG US UZ VC VN YU ZA ZM ZW

AL Designated countries for regional patents

Kind code of ref document: A2

Designated state(s): BW GH GM KE LS MW MZ SD SL SZ TZ UG ZM ZW AM AZ BY KG KZ MD RU TJ TM AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IT LU MC NL PT RO SE SI SK TR BF BJ CF CG CI CM GA GN GQ GW ML MR NE SN TD TG

121 Ep: the epo has been informed by wipo that ep was designated in this application
WWE Wipo information: entry into national phase

Ref document number: 2003758543

Country of ref document: EP

WWE Wipo information: entry into national phase

Ref document number: 1020057008143

Country of ref document: KR

WWE Wipo information: entry into national phase

Ref document number: 20038A28822

Country of ref document: CN

WWE Wipo information: entry into national phase

Ref document number: 2004549476

Country of ref document: JP

WWP Wipo information: published in national office

Ref document number: 1020057008143

Country of ref document: KR

WWP Wipo information: published in national office

Ref document number: 2003758543

Country of ref document: EP

WWE Wipo information: entry into national phase

Ref document number: 2006186512

Country of ref document: US

Ref document number: 10561532

Country of ref document: US

WWP Wipo information: published in national office

Ref document number: 10561532

Country of ref document: US

WWW Wipo information: withdrawn in national office

Ref document number: 2003758543

Country of ref document: EP