WO2004040648A1 - 半導体装置および半導体装置の作製方法 - Google Patents
半導体装置および半導体装置の作製方法 Download PDFInfo
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- WO2004040648A1 WO2004040648A1 PCT/JP2003/013552 JP0313552W WO2004040648A1 WO 2004040648 A1 WO2004040648 A1 WO 2004040648A1 JP 0313552 W JP0313552 W JP 0313552W WO 2004040648 A1 WO2004040648 A1 WO 2004040648A1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68368—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used in a transfer process involving at least two transfer steps, i.e. including an intermediate handle substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/928—Front and rear surface processing
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/982—Varying orientation of devices in array
Definitions
- the present invention relates to a method for peeling a layer to be peeled, and particularly to a method for peeling a layer to be peeled including various elements.
- the present invention relates to a semiconductor device having a semiconductor integrated circuit or a thin film transistor (hereinafter referred to as TFT) in which a peeled layer to be peeled is attached to a substrate and transferred, and a manufacturing method thereof.
- TFT semiconductor integrated circuit or a thin film transistor
- the present invention relates to an electro-optical device represented by a liquid crystal module, a light emitting device represented by an EL module, and an electronic device equipped with such a device as a component.
- a semiconductor device in this specification refers to any device that can function by utilizing semiconductor characteristics, and an electro-optical device, a light-emitting device, a semiconductor circuit, and an electronic device are all semiconductor devices.
- the substrate used in the conventional image display device is a substrate made of an inorganic material such as a glass or quartz substrate as described above, and has a disadvantage that the inorganic material is cracked and heavy. In order to overcome this drawback, attempts have been made to form a TFT on a plastic substrate represented by a flexible plastic film or the like.
- the separation layer since amorphous silicon or polysilicon is used as the separation layer, depending on the film thickness and the wavelength of the laser beam used, The problem may be that the irradiated laser beam passes through the separation layer and damages the layer to be peeled.
- a device is manufactured on the separation layer, if high-temperature heat treatment or the like is performed in the device manufacturing process, hydrogen contained in the separation layer is diffused and reduced, and the separation layer is irradiated with laser light.
- peeling may not be performed sufficiently. Therefore, there is a problem that the process after the formation of the separation layer is limited in order to maintain the amount of hydrogen contained in the separation layer.
- a light-blocking layer or a reflective layer is provided to prevent damage to the layer to be peeled, but in that case, it is difficult to manufacture a transmissive liquid crystal display device.
- the present invention has been made in view of the above problems, and provides a method for enabling separation without damaging a layer to be separated, and has a large area in addition to a layer having a small area. It is an object to enable a layer to be peeled to be peeled over the entire surface.
- Another object of the present invention is to provide a light-weight semiconductor device in which a layer to be separated is attached to various base materials and a method for manufacturing the semiconductor device.
- a light-weight semiconductor device and a method of manufacturing the same by attaching various elements typified by a TFT (thin film diode, photoelectric conversion element composed of silicon PIN junction and silicon resistance element) to a flexible film.
- TFT thin film diode, photoelectric conversion element composed of silicon PIN junction and silicon resistance element
- the substrate is separated cleanly by physical means, typically at the inside or at the interface (the interface between the metal oxide layer and the oxide layer), typically by applying mechanical force (for example, peeling off by hand).
- mechanical force for example, peeling off by hand.
- the properties (physical properties) of a substance differ greatly depending on the arrangement of the atoms and molecules that compose it.
- the crystalline state and the non-crystalline state differ in terms of optical characteristics such as spectral characteristics (transmittance, reflectance, absorption coefficient, etc.), refractive index, and electrical characteristics. They differ in electrical conductivity and other properties, and in terms of other properties, they differ in strength, hardness, density and surface energy. It is also known that, even in the same crystal state, if the plane orientation (or orientation) of the crystal lattice is different, each of the above-mentioned characteristics is greatly different depending on the respective orientation.
- semiconductor devices using silicon have different optical characteristics and electrical characteristics between those in an amorphous state and those in a polycrystalline state, and those in a single crystal state. It is.
- a metal layer was provided on a substrate, an oxide layer was formed on the metal layer, and after forming various elements on the oxide layer, the metal layer was oxidized.
- the metal oxide formed at the interface between the metal layer and the oxide layer is composed of aggregates of crystals with partially different characteristics when viewed in a microscopic manner, and the state between the crystals aggregates. It is easily anticipated that it will be formed by combining strong and weak parts, or by combining strong and weak parts, and peeling or separation may occur due to physical forces. Can be expected to get.
- the interface between the metal layer and the oxide layer can exist in an energy state within a certain range, in other words, in a bonded state. It is possible to complete the process of manufacturing devices such as TFTs without peeling (peeling).
- a method of peeling a layer to be peeled from a substrate A method of peeling a layer to be peeled from a substrate
- the layer to be peeled adhered to the support is oxidized by a physical method from the substrate provided with the metal layer. Separating in a layer or at an interface between the metal oxide layer and the oxide layer.
- the metal layer mainly includes an element selected from Ti, Ta, W, Mo, Cr, Nd, Fe, Ni, Co, Zr, and Zn; It is characterized by being a single layer made of an alloy material or a compound material as a component, or a laminate of these.
- the oxide layer in contact with the metal layer is a silicon oxide film formed by a sputtering method.
- the layer to be peeled off is characterized in that it includes a thin film transistor, a photoelectric conversion element composed of a PN junction of silicon, an organic light emitting element, an element having a liquid crystal, a memory element, a thin film diode, or a silicon resistance element.
- a silicon oxide film, a silicon oxynitride film, a silicon nitride film, or a stacked layer thereof may be included in a layer which is in contact with the oxide layer at the lowermost layer of these elements.
- the step of oxidizing the metal film is performed by laser light irradiation, heat treatment, or a combined treatment of laser single light irradiation and heat treatment.
- the one laser beam is a laser beam emitted from a continuous wave solid laser or a pulsed solid laser.
- solid state laser of the continuous wave or as a solid laser pulse oscillation YAG laser mono-, YV 0 4 laser, YLF laser mono-, YA 1 0 3 lasers foremost, glass laser, ruby one laser, Alexandrite laser, T i: one or more types selected from sapphire lasers.
- the other continuous wave laser or pulsed laser there is one or more kinds selected from excimer laser, Ar laser, and Kr laser.
- the direction of the laser light may be applied to the metal layer from the substrate side, to the metal layer from the layer to be separated, or from both.
- the beam shape of the laser beam may be a perfect circle, a triangle, a square, a polygon, an ellipse, or a straight line. Any size of 1 torr is acceptable (both point and planar).
- the laser light irradiation region may have an overlap (referred to as an overlap) with the immediately preceding irradiation region, or may not overlap.
- the wavelength of the laser light is preferably from 10 nm to 1 mm, more preferably from 10.0 nm to L 0 m.
- the metal layer may be provided with another layer, for example, an insulating layer, between the substrate and the metal layer.
- the metal layer is formed in contact with the substrate. It is desirable to do.
- a light layer such as a metal layer or a metal pattern in the layer to be peeled may be used.
- the metal layer has at least an ultraviolet light, a visible light, and an infrared light wavelength region. Although light is absorbed but has low transmittance, the layer to be peeled can be prevented from being damaged without being directly irradiated with light.
- the heat treatment method is not limited. Particularly, if the RTA (rabbit thermal annealing) method is used, the treatment can be performed in a short time. This makes it easier to deal with an increase in the number of processed sheets when considering mass production.
- the region where the metal layer is oxidized is located at the interface between the metal layer and the oxide layer formed on the metal layer when the metal layer is formed in contact with the substrate. If any layer is formed between the substrate and the metal layer, an interface between the substrate and some layer formed between the substrate and the metal layer can be considered. In the latter case where the metal oxide layer is expected to be formed at two interfaces above and below the metal layer, when the layer to be peeled is separated from the substrate, the metal layer and the above-mentioned layer are separated. When peeling occurs in the metal oxide layer formed between the layers or at the interface thereof, the metal layer may be peeled from the layer to be peeled again.
- the substrate is a glass substrate or a quartz substrate
- the support is a plastic substrate or a plastic substrate.
- a physical method is a method that is recognized physically, not chemically, and specifically, a mechanical method or a mechanical method that has a process that can be reduced to the laws of mechanics. Refers to a method of changing some mechanical energy (mechanical energy).
- the substrate desirably has a light-transmitting property.
- the substrate does not have a light-transmitting property, there is no problem as long as light irradiation can be performed from the layer to be separated.
- any substrate may be used as long as the substrate transmits light in a region where the metal layer shows absorption.
- the substrate described in the present specification refers to a substrate to which a layer to be peeled is attached and fixed using, for example, an adhesive, and is transferred, and the type of the substrate is not particularly limited. Any composition such as plastic, glass, metal, and ceramics may be used.
- a support is used for bonding to a layer to be peeled when peeled by physical means, and is not particularly limited, and may have any composition such as plastic, glass, metal, and ceramics. It may be.
- the shape of the substrate and the shape of the support are not particularly limited, and may be one having a flat surface, one having a curved surface, one having flexibility, or a film shape. If the priority is to reduce the weight of the semiconductor device, the base material should be a film-shaped plastic substrate such as polyethylene terephthalate (PET), polyester sulfone (PES), or polyethylene naphthalate (PEN).
- PC Polycarbonate
- PEEK polysulfone
- PES polyetherimide
- PAR polyarylate
- PBT polybutylene terephthalate
- the support in the case of manufacturing a liquid crystal display device, the support may be bonded to the layer to be peeled by using the support as an opposing substrate and a sealant as an adhesive.
- the substrate after manufacturing a TFT for driving a liquid crystal element, the substrate may be transferred to a substrate, and then the process may proceed to a liquid crystal element manufacturing process.
- the element provided in the separation layer has a pixel electrode, and a space between the pixel electrode and the counter substrate is filled with a liquid crystal material.
- the support as a sealing material to prevent the intrusion of moisture and oxygen and other substances that accelerate the deterioration of the organic compound layer from the outside.
- the light emitting element is completely shut off from the outside.
- a film-shaped plastic substrate is preferable, but since the effect of preventing a substance that accelerates the deterioration of the organic compound layer such as moisture and oxygen from entering from outside is weak, for example,
- the first insulating film, the second insulating film, and the third insulating film are provided on the support to prevent a substance such as moisture or oxygen, which sufficiently promotes the deterioration of the organic compound layer, from entering from outside. What is necessary is just to be a structure.
- a TFT that drives the light-emitting device is manufactured and then transferred to a base material. Subsequently, the process may proceed to a light emitting device manufacturing process.
- a metal oxide layer is provided so as to be in contact with an adhesive on a substrate having an insulating surface, and an element is provided above the metal oxide layer.
- a semiconductor device comprising:
- the element is a thin film transistor, an organic light emitting element, an element having liquid crystal, a memory element, a thin film diode, a photoelectric conversion element including a silicon PIN junction, or a silicon resistance element.
- the substrate is a plastic substrate having a flat surface or a curved surface.
- the metal oxide layer is formed by laser light irradiation, heat treatment, or a combined treatment of laser light irradiation and heat treatment. Note that this The metal oxide layer was formed during the peeling step.
- the metal layer is oxidized by performing a laser beam irradiation, a heat treatment, or a combined treatment of a laser single beam irradiation and a heat treatment. As a result, a metal oxide layer is formed. If the semiconductor layer is not to be damaged during the laser irradiation in the oxidation process, the metal layer is irradiated from the substrate side by laser irradiation. Therefore, there is no direct damage to the semiconductor layer.
- a layer to be peeled having a small area can be peeled, but also a layer to be peeled having a large area can be peeled off over the entire surface.
- the present invention can be said to be a process suitable for mass production because it can be easily peeled off by a physical method, for example, peeled off by a human hand.
- a manufacturing apparatus for peeling a layer to be peeled off during mass production is manufactured, a large-sized manufacturing apparatus can be manufactured at low cost.
- FIG. 1 is a diagram showing an embodiment.
- FIG. 2 is a diagram showing optical characteristics of the metal layer.
- FIG. 3 is a view showing a process of manufacturing an active matrix substrate. (Example 1)
- FIG. 4 is a diagram showing a manufacturing process of the active matrix substrate.
- FIG. 5 is a diagram showing a manufacturing process of the active matrix substrate.
- FIG. 6 is a diagram in which the active matrix is separated from the substrate.
- FIG. 7 is a diagram showing a light irradiation area when performing an oxidation treatment of a metal layer. (Example 1)
- FIG. 8 is a diagram showing a cross-sectional view of the liquid crystal display device. (Example 2)
- FIG. 9 is a top view or a cross-sectional view of the light-emitting device.
- Example 3 FIG. 10 is a diagram illustrating a cross-sectional structure of a pixel portion of a light emitting device.
- Fourth Embodiment FIG. 11 is a diagram illustrating an example of an electronic device. (Example 5)
- FIG. 12 is a diagram illustrating an example of an electronic device. (Example 5)
- 10 is a substrate
- 11 is a metal layer
- 12 is an oxide layer
- 13 is a layer to be separated.
- the substrate 10 may be any substrate as long as it shows transmittance for light in the wavelength region absorbed by the metal layer 11.
- a metal layer 11 is formed on a substrate 10 as shown in FIG.
- a typical example of the metal layer 11 is an element selected from W, Ti, Ta, Mo, Nd, Ni, Co, Zr, and Zn, or an alloy material or a compound material containing the aforementioned element as a main component.
- a single layer of these or a stack of these can be used, and the film thickness is 10 nm to 200 nm, preferably 50 nm to 75 nm.
- the substrate is sometimes fixed by the sputtering method, the film thickness near the periphery of the substrate is likely to be uneven. Therefore, it is preferable to remove only the peripheral metal layer by dry etching.
- an insulating layer made of a silicon oxynitride film is provided between the substrate 10 and the metal layer 11 so that the substrate is not etched.
- the film may be formed to a thickness of about 100 nm.
- silicon oxide or silicon nitride oxide may be formed to a thickness equal to or greater than that of the metal layer by a sputtering method. For example, it is preferably about 100 nm to 600 nm, and more preferably about 150 nm to 200 nm.
- the layer to be peeled 13 includes various elements typified by TFTs (thin film diodes, semiconductor devices such as photoelectric conversion elements formed of silicon PIN junctions, silicon resistance elements, and sensor elements such as pressure-sensitive fingerprint sensors). It may be a layer.
- TFTs thin film diodes, semiconductor devices such as photoelectric conversion elements formed of silicon PIN junctions, silicon resistance elements, and sensor elements such as pressure-sensitive fingerprint sensors. It may be a layer.
- a second substrate 15 serving as a support for fixing the layer to be peeled 13 is attached with a first adhesive 14.
- a first adhesive 14 (FIG. 1 (B)) It is preferable that the second substrate 15 has higher rigidity than the first substrate 10.
- a general adhesive, a double-sided tape, or a combination thereof may be used as the first adhesive.
- FIG. 1 (C) shows an oxidation step by light irradiation.
- the metal oxide layer 16 is formed.
- the substrate 10 provided with the metal layer 11 is peeled off by physical means.
- Fig. 1 (E) it is assumed that the mechanical strength of the layer 13 to be peeled is weak and the layer 13 to be peeled is broken at the time of peeling. If the mechanical strength is sufficiently strong and the layer to be peeled 13 is not broken at the time of peeling, the first adhesive material 14 and the second substrate 15 (support) are unnecessary at the time of peeling and can be omitted. is there.
- FIG. 1 (F) shows a state after the layer to be peeled 13 has been peeled off.
- FIG. 1 (G) shows a state where a third substrate 18 which is a base material for transferring the layer 13 to be peeled is attached with a second adhesive 17.
- the type of the third substrate 18 is not particularly limited, and may have any composition such as plastic, glass, metal, and ceramics.
- the shape is not particularly limited, and may be a flat surface, a curved surface, a bendable film, or a film.
- the second substrate 15 is peeled off by removing or peeling off the first adhesive material 14. (Fig. 1 (H))
- the EL layer 21 is formed, and the fourth substrate 19 serving as a sealing material for the EL layer 21 is sealed with a third adhesive 20.
- the fourth substrate 19 is not particularly required if the third adhesive 20 is a material that can sufficiently block substances (moisture and oxygen) that promote the deterioration of the organic compound layer.
- the present invention is not limited to the EL element, and various semiconductor devices can be completed.
- the support may be used as a counter substrate, and the support may be bonded to the layer to be separated using a sealant as an adhesive.
- the provided element has a pixel electrode, and a space between the pixel electrode and the counter substrate is filled with a liquid crystal material.
- the order in which the liquid crystal display device is manufactured is not particularly limited.
- a counter substrate as a support is attached, and after injecting liquid crystal, the substrate is peeled off to form a transfer body (a base material for transfer).
- a plastic substrate may be attached, or after forming the pixel electrodes, the substrate may be peeled off, a plastic substrate as the first transfer member may be attached, and then the opposite substrate as the second transfer member may be attached. May be.
- the order of manufacturing the light-emitting device is not particularly limited, and after forming the light-emitting element, a plastic substrate as a support may be attached, the substrate may be separated, and a plastic substrate as a base may be attached. After forming the light-emitting element, the substrate may be peeled off, a plastic substrate as a first transfer body may be attached, and then a plastic substrate as a second transfer body may be attached.
- FIG. 2 shows an example of optical characteristics at the stage when a metal layer (tungsten film 500 nm) and an oxide layer (silicon oxide film 200 nm by a sputtering method) according to the present invention are formed.
- the optical characteristics are obtained by measuring the reflectance and transmittance of light incident from the glass substrate side using glass as the substrate.
- the absorptance is the difference between the sum of the transmissivity and the reflectivity, which is one.
- the transmittance in the wavelength range of the measured range is less than 6%, while the absorption is at least over 40% (Fig. 2 (C)). Therefore, even if the metal layer is irradiated with laser light from the substrate side, the metal layer absorbs the photoenergy and does not transmit it, so that the layer to be peeled is not damaged. (Example)
- a method for simultaneously manufacturing a pixel portion and a TFT (a n-channel TFT and a p-channel TFT) of a driving circuit provided around the pixel portion on the same substrate will be described in detail.
- an example in which an active matrix substrate for manufacturing a reflective liquid crystal display device is manufactured is described.
- the present invention is not particularly limited. If the TFT arrangement and the material of the pixel electrode are appropriately changed, the transmission can be performed. Needless to say, it is possible to manufacture a liquid crystal display device of the type and a light emitting device having a light emitting layer containing an organic compound.
- a glass substrate As the substrate 100, a glass substrate (AN 100) was used. First, a 100-nm-thick silicon oxynitride layer 101 was formed on a substrate by a PCVD method.
- a tungsten layer 102 is formed in a thickness of 50 nm as a metal layer by a sputtering method, and a silicon oxide layer is formed in a thickness of 200 nm as an oxide layer 103a by a sputtering method continuously without opening to the atmosphere.
- the deposition conditions for the silicon oxide layer were as follows: using an RF sputtering system, a silicon oxide target (diameter: 30.5 cm), flowing argon gas heated at a flow rate of 30 sccm to heat the substrate, 30 ⁇ Deposition pressure 0.4 0a, deposition power 3kW.
- Argon flow rate Z oxygen flow rate 10sccm Z3 Osccm.
- a nickel acetate solution containing 1 Oppra of nickel by weight is applied with a spinner.
- a method of spraying a nickel element over the entire surface by a sputtering method may be used.
- a semiconductor film here, a polysilicon layer
- a heat treatment for crystallization (550, 4 hours) is performed to obtain a silicon film having a crystal structure.
- a crystallization technique using nickel as a metal element that promotes crystallization of silicon is used here, other known crystallization techniques, such as a solid phase growth method and a laser monocrystallization method, may be used. Good.
- a laser beam (XeCl: wavelength 308) for increasing the crystallization rate and repairing defects remaining in the crystal grains. nm) in air or in an oxygen atmosphere.
- Excimer laser light with a wavelength of 40 Onm or less, and second and third harmonics of YAG laser are used for the laser light.
- pulse laser light with a repetition frequency of about 10 to 1000 Hz is used, and the laser light is focused to 100 to 500 mJ / cm 2 by an optical system and illuminated with an overlap rate of 90 to 95%. And scan the surface of the silicon film.
- laser light irradiation was performed in the atmosphere at a repetition frequency of 30 Hz and an energy density of 47 OfflVcm 2 .
- an oxide film is formed on the surface by laser light irradiation because the irradiation is performed in the air or in an oxygen atmosphere.
- a continuous wave laser may be used. In order to obtain a crystal with a large grain size when crystallizing an amorphous semiconductor film, a continuous wave laser is used. It is preferable to use a solid-state laser that can perform the second harmonic and the second to fourth harmonics of the fundamental wave.
- Nd: YV0 4 laser (fundamental wave 1064 nm) second harmonic (532 nm) or the third harmonic (355 nm) may be applied.
- a continuous wave laser the laser light emitted from a continuous wave YVO 4 laser with an output of 10 W is converted into a harmonic by a non-linear optical element.
- a YVO 4 crystal and a non-linear optical element are put in a resonator to emit harmonics.
- the laser beam is preferably shaped into a rectangular or elliptical laser beam on the irradiation surface by an optical system, and the laser beam is irradiated on the object.
- the energy density needs to be about 0.01 to 100 MWZcm 2 (preferably, 0.1 OMWZcm 2 ). Then, the semiconductor film including the layer to be separated may be moved and irradiated relatively to one laser beam at a speed of about 10 to 2000 cmZs. When irradiating this laser light, the silicon film is irradiated not from the substrate side but from the silicon film surface side.
- the surface is treated with ozone water for 120 seconds to form a barrier layer made of an oxide film having a total thickness of 1 to 5 nm.
- the barrier layer is formed using ozone water.
- a method of oxidizing the surface of a semiconductor film having a crystalline structure by irradiation with ultraviolet light in an oxygen atmosphere, an oxygen brazing method, or the like is used.
- the barrier layer may be formed by depositing an oxide film of about 1 to 10 nm by a method of oxidizing the surface of a semiconductor film having a crystal structure by a plasma treatment, a plasma CVD method, a sputtering method, an evaporation method, or the like.
- the oxide film formed by irradiation with one laser beam may be removed.
- an amorphous silicon film containing an argon element which becomes a gettering site, is formed to a thickness of 10 nm to 400 nm, here, 10 nm in thickness on the Paria layer by a sputtering method.
- the amorphous silicon film containing an argon element is formed in an atmosphere containing argon using a silicon target.
- deposition conditions are as follows: a flow ratio of monosilane to argon: the (S i H 4 A r) 1: and 99, the film formation pressure 6. Set 665 Pa (0.05 To rr), RF power density is 0.087 WZcm 2, and film formation temperature is 350.
- a lamp annealing device may be used instead of the furnace.
- the barrier layer as an etching stopper, the amorphous silicon film containing an argon element as a gettering site is selectively removed, and then the barrier layer is selectively removed with dilute hydrofluoric acid.
- the barrier layer since nickel tends to move to a region having a high oxygen concentration, it is desirable to remove the barrier layer made of an oxide film after gettering.
- a resist mask is formed.
- a semiconductor layer is formed and etched into a desired shape to form a semiconductor layer separated into islands.
- the resist mask is removed.
- the metal layer 102, the oxide layer 103a, and the base insulating film 103b are formed on the substrate 100, and a semiconductor film having a crystalline structure is obtained.
- the semiconductor film is etched into a desired shape and separated into islands.
- the formed semiconductor layers 104 to 108 can be formed.
- an insulating film containing silicon as a main component and serving as the gate insulating film 109 is formed.
- a first conductive film 110 a having a thickness of 20 to 100 nm and a second conductive film 110 b having a thickness of 100 to 400 nm are formed on the gate insulating film 109.
- a 50 nm-thick tantalum nitride film and a 370 nm-thick tungsten film are sequentially stacked on the gate insulating film 109.
- the conductive material forming the first conductive film and the second conductive film is an element selected from Ta, W, Ti, Mo, Al, and Cu, or an alloy material or compound containing the above element as a main component. It is formed of a material. Further, a semiconductor film typified by a polycrystalline silicon film doped with an impurity element such as phosphorus, or an AgPdCu alloy may be used as the first conductive film and the second conductive film.
- the structure is not limited to a two-layer structure.
- a 50-nm-thick tungsten film and a 500-nm-thick aluminum film It may be a three-layer structure in which an alloy of aluminum and silicon (A1-Si) film and a 30-nm-thick titanium nitride film are sequentially laminated.
- tungsten nitride may be used instead of tungsten for the first conductive film, or an alloy of aluminum and silicon (A 1—Si) film for the second conductive film may be used.
- an alloy film of aluminum and titanium (Al-Ti) may be used, or a titanium film may be used instead of the titanium nitride film of the third conductive film.
- it may have a single-layer structure.
- masks 112 to 117 made of resist are formed by a light exposure step, and a first etching process for forming a gate electrode and a wiring is performed.
- the first etching process is performed under the first and second etching conditions. It is preferable to use an ICP (Inductively Coupled Plasma) etching method for the etching.
- the desired tape is obtained by appropriately adjusting the etching conditions (the amount of power applied to the coil-type electrode, the amount of power applied to the substrate-side electrode, the temperature of the substrate-side electrode, etc.) by using the ICP etching method.
- the film can be etched in one shape.
- the etching gas is a chlorine-based Gasuma other typified like C l 2, BC 1 3, S i C l 4, CC 1 4 is typified by such CF 4, SF 6, NF 3 it can be used fluorine-based gas, or 0 2 as appropriate.
- 15 Off RF (13.56 MHz) power is also applied to the substrate side (sample stage) and a substantially negative self-bias voltage is applied.
- the electrode area size on the substrate side is 12.5 cm x 12.5 cm
- the coil-type electrode area size (here, a quartz disk with a coil) is a disk with a diameter of 25 cm. .
- the W film is etched to form the first conductive film. The ends of the layers are tapered.
- the etching rate for W under the first etching condition is 200.39 nm Zmin
- the etching rate for TaN is 80.32 nm / "min
- the selectivity ratio of W to TaN is about 2.5.
- the taper angle of W is about 26 °
- the etching conditions are changed to the second etching conditions without removing the resist masks 112 to 117.
- CF 4 C 1 2 to use gas
- 30Z 30 a gas flow rate of, respectively, respectively (sc cm)
- RF 13.56 MHz
- plasma was generated and etching was performed for about 30 seconds.
- 20 W RF (13.56 MHz) power was also applied to the substrate side (sample stage), and a substantially negative self-bias voltage was applied.
- the W film and T a N film in the second etching conditions using the gas mixture of CF 4 and C 1 2 are etched to the same extent.
- the etching rate for W is 58.97 nm / min
- the etching rate for TaN is 66.43 nm.Zinc is etched without leaving any residue on the gate insulating film.
- the shape of the resist mask is made appropriate, so that the edges of the first conductive layer and the second conductive layer are tapered due to the effect of the bias voltage applied to the substrate side. It becomes.
- the angle of the tapered portion may be 15 to 45 °.
- the first shape conductive layers 119 to 124 (the first conductive layers 119 a to 124 a) including the first conductive layer and the second conductive layer are formed. And the second conductive layers 119 b to 124 b).
- the insulating film 109 serving as a gate insulating film is etched by about 10 to 2 Onm, and becomes a gate insulating film 118 in which a region not covered with the first shape conductive layers 119 to 124 is thinned.
- a second etching process is performed without removing the resist mask.
- the gas flow rate is set to 24 12/24 (sc cm), 1.
- the selectivity with respect to the insulating film 118 is high, so that the film loss can be suppressed.
- the thickness of the insulating film 118 is reduced by only about 8 nm.
- the taper angle of W became 70 ° by this second etching process.
- the second conductive layers 126b to 131b are formed by this second etching process.
- the first conductive layer is hardly etched, and becomes the first conductive layers 1.26a to 131a.
- the first conductive layers 126a to 131a have substantially the same size as the first conductive layers 119a to 124a.
- the width of the first conductive layer is about 0.3 ⁇ m compared to that before the second etching process, that is, the entire line width. It may retreat about 0.6 m, but there is almost no change in size.
- a three-layer structure consisting of a 50-nm-thick tungsten film, a 500-nm-thick aluminum-silicon alloy (Al-Si) film, and a 30-nm-thick titanium nitride film is sequentially stacked. If the structure, as the first etching conditions of the first etching process, using the BC 1 3 and C 1 2 0 2 and the raw material gas, the gas flow ratio of their respective 65X10 / 5 (sc cm) on the substrate side (sample stage) with a length of 300 ⁇ ?
- the gas flow rate is set to 20/6 0 (sccm),.
- substrate 100 W RF (13.56 MHz) power is applied to the side (sample stage), and 600 W RF (13.56 MHz) power is applied to the coil-type electrode at a pressure of 1.2 Pa to generate plasma. And etch Just fine.
- the doping may be performed by an ion doping method or an ion implantation method.
- the ion doping method requires a dose of 1.5 X It is performed at 10 u atoms / cm 2 and an acceleration voltage of 60 to 100 kV.
- phosphorus (P) or arsenic (A s) is used as an impurity element for imparting n-type.
- the first conductive layer and the second conductive layer 126 to 130 serve as a mask for the impurity element imparting n-type, and the first impurity region 132 to 136 is self-aligned. It is formed.
- An impurity element imparting n-type is added to the first impurity regions 1332 to 1336 in a concentration range of 1 ⁇ 10 16 to 1 ⁇ 10 17 / cm 3 .
- a region having the same concentration range as the first impurity region is also called an n-_ region.
- the first doping process is performed after removing the resist mask, but the first doping process may be performed without removing the resist mask.
- a mask 1337 is a mask for protecting the channel formation region of the semiconductor layer forming the p-channel TFT of the driving circuit and a peripheral region thereof, and a mask 1338 is one of the n-channel TFTs of the driving circuit.
- the mask 139 protects the channel formation region of the semiconductor layer forming the pixel and its peripheral region, and the mask 139 serves as the channel formation region of the semiconductor layer forming the TFT of the pixel portion and its peripheral region, the storage capacitor, and the like. Is a mask that protects the region.
- the conditions of the ion doping method in the second doping treatment are as follows: doping amount is 1.5 ⁇ 10 15 atoms / cm 2, and accelerating voltage is 60 to: L 0 0 kV, and phosphorus (P) is doped. .
- an impurity region is formed in each semiconductor layer in a self-aligned manner using the second conductive layers 126 b to 128 b as a mask. Of course, it is not added to the area covered by the masks 1337 to 139. Thus, the second impurity region 1 40 to 142 and a third impurity region 144 are formed.
- the second impurity regions 140 to 142 are doped with an impurity element imparting n-type in a concentration range of 1 ⁇ 10 2 ° to 1 ⁇ 10 2 Vcm 3 .
- a region having the same concentration range as the second impurity region is also called an n + region.
- the third impurity region is formed at a lower concentration than the second impurity region by the first conductive layer, and is an impurity which imparts n-type in a concentration range of 1 ⁇ 10 18 to 1 ⁇ 10 / cm 3 . Elements will be added.
- the third impurity region has a concentration gradient in which the impurity concentration increases toward the end of the tapered portion because doping is performed by passing through the portion of the first conductive layer that is tapered.
- a region having the same concentration range as the third impurity region is also called an n-region.
- the regions covered with the masks 138 and 139 are not added with an impurity element by the second doping process, and become the first impurity regions 146 and 147.
- the semiconductor layer forming the p-channel TFT and the semiconductor layer forming the storage capacitor are doped with an impurity element imparting a p-type conductivity by the third doping treatment.
- 151, 152 and fifth impurity regions 153, 154 are formed.
- the fourth impurity regions 151 and 152 are doped with an impurity element imparting a P-type in a concentration range of 1 ⁇ 10 2 ⁇ : LX 10 21 / cm 3 . It should be noted that the fourth impurity regions 151 and 152 have regions (n However, the concentration of the impurity element imparting p-type is added 1.5 to 3 times that of the impurity element, and the conductivity type is p-type.
- a region having the same concentration range as the fourth impurity region is also referred to as ap + region.
- the fifth impurity regions 15 3 and 15 4 are formed in a region overlapping with a part of the taper of the second conductive layer 127 a , and 1 X 10 18 to 1 X 10 2 fl An impurity element imparting P-type is added in a concentration range of / cm 3 .
- a region having the same concentration range as the fifth impurity region is also referred to as a p-region.
- an impurity region having n-type or p-type conductivity is formed in each semiconductor layer.
- the conductive layers 126 to 129 serve as TFT gate electrodes.
- the conductive layer 130 serves as one electrode forming a storage capacitor in the pixel portion.
- the conductive layer 13 1 forms a source wiring in the pixel portion.
- an insulating film (not shown) covering almost the entire surface is formed.
- a silicon oxide film having a thickness of 5 O nm was formed by the plasma CVD method.
- this insulating film is not limited to the silicon oxide film, and another insulating film containing silicon may be used as a single layer or a laminated structure.
- This activation step is performed by a rapid thermal method using a lamp light source (RTA method), a method of irradiating a YAG laser or an excimer laser from the back surface, or a heat treatment using a furnace.
- RTA method lamp light source
- the method is performed by a method combined with any of these methods.
- a step of forming the insulating film after the activation may be performed.
- a first interlayer insulating film 155 made of a silicon nitride film is formed and subjected to a heat treatment (a heat treatment at 300 to 550 ° C. for 1 to 12 hours) to hydrogenate the semiconductor layer. Is performed. (FIG. 4 (C))
- This step is a step of terminating the dangling pound of the semiconductor layer with hydrogen contained in the first interlayer insulating film 155.
- the semiconductor layer can be hydrogenated regardless of the presence of an insulating film (not shown) made of a silicon oxide film.
- the material mainly containing aluminum is used for the second conductive layer, it is important to set the heat treatment conditions that the second conductive layer can withstand in the hydrogenation step.
- plasma hydrogenation using hydrogen excited by plasma may be performed.
- a second interlayer insulating film 156 made of an organic insulating material is formed on the first interlayer insulating film 155.
- an acrylic resin film having a thickness of 1.6 m is formed.
- a contact hole reaching the source wiring 131, a contact hole reaching the conductive layers 129, 130, and a contact hole reaching each impurity region are formed.
- a plurality of etching processes are sequentially performed.
- the first interlayer insulating film is etched using an insulating film (not shown) as an etching stopper, and then the insulating film ( (Not shown) was etched.
- wirings and pixel electrodes are formed using A1, Ti, Mo, W, and the like. It is desirable to use a material having excellent reflectivity, such as a film mainly composed of A1 or Ag, or a laminated film thereof, for the material of these electrodes and pixel electrodes. like this Thus, source or drain electrodes 157 to 162, gate wiring 164, connection wiring 163, and pixel electrode 165 are formed.
- a driving circuit 206 having an n-channel TFT 201, a channel-type signature 202, and an n-channel TFT 203, and a pixel portion 207 having a pixel TFT 204 composed of an n-channel TFT and a storage capacitor 205 are provided. They can be formed on the same substrate. (FIG. 5) In this specification, such a substrate is referred to as an active matrix substrate for convenience.
- a pixel TFT 204 (n-channel TFT) has a channel forming region 169, a first impurity region (n_ ⁇ region) 147 formed outside a conductive layer 129 forming a gate electrode, A second impurity region (n + region) 142, 171 that functions as a source region or a drain region. Further, a fourth impurity region 152 and a fifth impurity region 154 are formed in the semiconductor layer functioning as one electrode of the storage capacitor 205.
- the storage capacitor 205 is formed by the second electrode 130 and the semiconductor layers 152, 154, and 170 using the insulating film (the same film as the gate insulating film) 118 as a dielectric.
- the n-channel TFT 201 overlaps with the channel formation region 166 and a part of the conductive layer 126 forming the gate electrode through the insulating film. It has a third impurity region (n-region) 144 and a second impurity region (n. + Region) 140 functioning as a source region or a drain region.
- the p-channel TFT 202 has a channel formation region 167, a part of the conductive layer 127 forming a gate electrode, and an insulating film. And a fourth impurity region (p + region) 151 functioning as a source region or a drain region.
- the n-channel TFT 203 (second n-channel TFT) has a channel forming region 168, and a first impurity region (n-one region) 146 outside the conductive layer 128 for forming a gate electrode. And a second impurity region (n + region) 141 functioning as a source region or a drain region.
- TFTs 201 to 203 may be appropriately combined to form a shift register circuit, a buffer circuit, a level shifter circuit, a latch circuit, and the like, and a driving circuit 206 may be formed.
- a driving circuit 206 may be formed.
- an n-channel TFT 201 and a p-channel TFT 202 may be complementarily connected to each other.
- the structure of the n-channel TFT 203 is suitable for a buffer circuit with a high driving voltage, in order to prevent deterioration due to the hot carrier effect.
- the structure of the n-channel TFT 201 which is a GOLD structure, is suitable.
- the reliability can be improved by improving the planarization of the semiconductor film surface, even if the area of the impurity region overlapping with the gate electrode and the gate insulating film via the gate insulating film is reduced in the GOLD structure TFT, it is sufficient. High reliability can be obtained. Specifically, sufficient reliability can be obtained even if the size of the tapered part of the gate electrode in the GOLD structure TFT is reduced. Also, in a TFT with a GO LD structure, when the gate insulating film becomes thinner, the parasitic capacitance increases. However, if the parasitic capacitance is reduced by reducing the size of the tapered portion of the gate electrode (first conductive layer), the f-characteristics (frequency characteristics) will be improved and higher speed operation will be possible. In addition, the TFT has sufficient reliability. Note that, also in the pixel TFT of the pixel portion 207, the off-current and the variation can be reduced by the irradiation of the second laser light.
- an example of manufacturing an active matrix substrate for forming a reflective display device has been described.
- a pixel electrode is formed of a transparent conductive film
- a photomask increases by one, but a transmissive type. Can be formed.
- the metal layer 102 is irradiated with continuous light or pulsed laser light from the substrate side, and heat is generated to oxidize the metal layer 102 and the metal layer 102 and the oxide layer 1.
- a metal oxide layer 190 is formed between the substrate and the substrate 3 (FIG. 6 (A)), and the layer to be separated can be separated from the substrate (FIG. 6 (B)).
- the laser beam irradiated at this time used an Nd: YAG laser (fundamental wave 1064) with an output of 40 W, but as shown in Fig. 2, the wavelength range of the laser beam May be used.
- the timing of irradiating the laser beam is not limited to the time after the display device is formed, but may be the timing at which the layer to be peeled is peeled.
- the beam shape of the laser beam was used as a continuous beam of light this time. However, the beam shape is not limited to this, and may be any of a perfect circle, an ellipse, a square, a square, and a polygon. Any shape such as point, point, and plane may be used.
- the oxidation treatment of the metal layer was performed by laser light irradiation this time, but an oxidation treatment using heat treatment may be used.
- the substrate 100 is removed. Tear off You may.
- a support (not shown) for fixing the layer to be peeled is attached, followed by laser irradiation and peeling.
- the display device 900 (substrate 900, pixel driver 900, part of gate driver 900, source driver 900) Laser light may be applied to an area 906 including a part 904 and an FPC terminal part 905).
- Embodiment 1 shows an example of a reflective display device in which a pixel electrode is formed of a reflective metal material.
- a transmissive display device in which a pixel electrode is formed of a light-transmitting conductive film is used.
- Fig. 8 shows an example of the display device.
- a pixel electrode 61 made of a light-transmitting conductive film is formed.
- the conductive film having a light-transmitting property ITO (indium tin oxide alloy), indium oxide-zinc oxide alloy (I n 2 0 3 one Z n O), may be used zinc oxide (Z n O) and the like.
- connection electrode 602 overlapping with the pixel electrode is formed. This connection electrode 62 is connected to the drain region through a contact hole. A source electrode or a drain electrode of another TFT is formed at the same time as the connection electrode.
- the active matrix substrate is formed as described above. Using this active matrix substrate, the TFT is peeled off, and a go material (plastic substrate) is bonded to produce a liquid crystal module. A pack light 606 and a light guide plate 605 are provided. An active matrix type liquid crystal display device as shown in FIG. The power par and the liquid crystal module are bonded together using an adhesive or an organic resin. When the plastic substrate and the opposing substrate are attached to each other, an organic resin may be filled in between the frame and the substrate so as to be bonded. In addition, since it is a transmission type, the polarizing plate 603 is attached to both the plastic substrate and the counter substrate.
- FIG. 1 An example of manufacturing a light-emitting device including a light-emitting element having a light-emitting layer containing an organic compound formed over a plastic substrate is shown in FIG.
- FIG. 9A is a top view showing the light emitting device
- FIG. 9B is a view showing FIG. 9A.
- Reference numeral 1108 denotes wiring for transmitting signals input to the source signal line driving circuit 1101 and the gate signal line driving circuit 1103, and an FPC (flexible printed circuit) 1109 serving as an external input terminal. Receives video and clock signals from Although only the FPC is shown here, a printed wiring board (PWB) may be attached to the FPC.
- PWB printed wiring board
- a driver circuit and a pixel portion are formed over the substrate 1110; here, a source signal line driver circuit 1101 and a pixel portion 1102 are illustrated as the driver circuits.
- the substrate 110 is bonded to the base film with the adhesive layer 1100 by using the peeling method described in Embodiment Mode or Example 1.
- the source signal line driving circuit 1101 is a CMOS circuit formed by combining an n-channel TFT 1123 and a p-channel TFT 1124.
- the TFT forming the drive circuit may be formed by a known CMOS circuit, a PMOS circuit, or an NMOS circuit.
- a one-piece driver in which a drive circuit is formed on a substrate is shown. However, this is not always necessary, and the driver can be formed not on the substrate but outside.
- the pixel portion 1102 is formed by a plurality of pixels including a switching TFT 1111, a current controlling TFT 111, and a first electrode (anode) 113 electrically connected to a drain thereof. .
- a switching TFT 1111 a current controlling TFT 111
- a first electrode (anode) 113 electrically connected to a drain thereof.
- two TFTs are used for one pixel
- three or more TFTs may be used as appropriate.
- the first electrode 1113 is in direct contact with the drain of the TFT, a material layer capable of forming an ohmic connection with the drain made of silicon is formed as the lowermost layer of the first electrode 1113. It is preferable to use a material layer having a large work function on the surface in contact with the layer containing an organic compound. For example,. With a three-layer structure of a titanium oxide film, a film containing aluminum as a main component, and a titanium nitride film, the resistance as a wiring is low, a good ohmic contact can be obtained, and the film can function as an anode. it can.
- the first electrode 111 may be a single layer of a titanium nitride film, or a stacked layer of two or more layers.
- insulators referred to as banks, partition walls, barriers, banks, etc.
- the insulator 111 may be formed using an organic resin film or an insulating film containing silicon.
- an insulator having a shape shown in FIG. 9 is formed using a positive photosensitive acryl resin film as the insulator 111.
- a curved surface having a curvature is formed at the upper end or the lower end of the insulator 111.
- a positive photosensitive acrylic is used as the material for the insulator 111
- only the upper end of the insulator 111 has a curved surface with a radius of curvature (0.2! ⁇ 3 jm).
- a negative type which becomes insoluble in an etchant by photosensitive light or a positive type which becomes soluble in an etchant by light can be used.
- the insulator 111 may be covered with a protective film formed of an aluminum nitride film, an aluminum nitride oxide film, or a silicon nitride film.
- This protective film may be an insulating film mainly composed of silicon nitride or silicon nitride oxide obtained by a sputtering method (DC method or RF method), or a thin film mainly composed of carbon. If a silicon target is formed in an atmosphere containing nitrogen and argon, a silicon nitride film can be obtained. Further, a silicon nitride target may be used.
- the protective film The film may be formed using a film forming apparatus using moat plasma. Further, in order to allow light to pass through the protective film, it is preferable that the thickness of the protective film be as small as possible.
- a layer 1115 containing an organic compound is selectively formed over the first electrode (anode) 1113 by an evaporation method using an evaporation mask or an inkjet method. Further, a second electrode (cathode) 1116 is formed on the layer 1115 containing an organic compound.
- a light-emitting element 118 including the first electrode (anode) 1113, the layer containing an organic compound 1115, and the second electrode (cathode) 1116 is formed.
- the light emitting element 1118 is an example of emitting white light
- a color filter composed of a coloring layer 1131 and a light shielding layer (BM) 1132 for simplicity, the overcoat layer is not shown here
- full-color display can be obtained without using a color filter.
- a sealing substrate 1104 is attached to the light emitting element 1118 with a first sealing material 1105 and a second sealing material 1107.
- a sealing material 1105 and a second sealing material 1107. an epoxy resin is preferably used as the first sealant 1105 and the second sealant 1107.
- the first sealing material 1105 and the second sealing material 1107 are materials that do not transmit moisture and oxygen as much as possible.
- a material for forming the sealing substrate 1104 in addition to a glass substrate or a quartz substrate, a fiber glass-reinforced plastics (FRP), a polyvinyl fluoride (PVF), a mylar, a polyester or an acrylic resin.
- FRP fiber glass-reinforced plastics
- PVF polyvinyl fluoride
- mylar a polyester or an acrylic resin.
- a tick substrate can be used.
- the third sealing material is further covered so as to cover the side surface (exposed surface). It is also possible to seal with a sealing material.
- the light emitting element By encapsulating the light emitting element in the first sealing material 1105 and the second sealing material 1107 as described above, the light emitting element can be completely protected from the outside, and moisture and oxygen can be prevented from the outside. Such a substance that promotes the deterioration of the organic compound layer can be prevented from entering. Therefore, a highly reliable light emitting device can be obtained.
- a transparent conductive film is used as the first electrode 113, a double-sided light-emitting device can be manufactured.
- a structure in which a layer containing an organic compound is formed on an anode, and a cathode serving as a transparent electrode is formed on a layer containing an organic compound (hereinafter, referred to as a top emission structure).
- the light-emitting element has an organic compound layer formed on the anode and a cathode formed on the organic compound layer, and emits light generated in the organic compound layer from the anode, which is a transparent electrode, to the TFT.
- a structure of taking out (hereinafter, referred to as a bottom emission structure) may be adopted.
- Embodiment Mode can be freely combined with Embodiment Mode or Embodiment 1.
- Embodiment 3 describes an example of manufacturing a light-emitting device including a light-emitting element having a light-emitting layer containing an organic compound formed on a plastic substrate.
- a cross-sectional structure of one pixel particularly The connection of the light emitting element and the TFT and the shape of the partition wall arranged between the pixels will be described in further detail.
- 40 is a substrate
- 41 is a partition (also called a bank)
- 42 is an insulating film
- 43 is a first electrode (anode)
- 44 is a layer containing an organic compound
- 45 is a second electrode.
- 46a is a channel forming region
- 46b and 46c are source or drain regions
- 46d is a gate electrode
- 46e and 46f are source or drain electrodes.
- a top gate type TFT is shown here, the present invention is not particularly limited thereto, and a reverse gate type TFT or a forward gate type TFT may be used.
- 46 f is an electrode for connecting the TFT 46 by partially contacting and overlapping the first electrode 43.
- FIG. 10 (B) shows a cross-sectional structure partially different from FIG. 10 (A).
- the way in which the first electrode overlaps the electrode is different from the structure in FIG. 10 (A) .
- the electrode is formed so as to partially overlap. To connect to the TFT.
- FIG. 10 (C) shows a cross-sectional structure partially different from that of FIG. 10 (A).
- one layer of an interlayer insulating film is further provided, and the first electrode is connected to a TFT electrode via a contact hole.
- the cross-sectional shape of the partition wall 41 may be a tapered shape as shown in FIG. It is obtained by exposing a resist using a photolithography method and then etching a non-photosensitive organic resin or inorganic insulating film.
- a shape as shown in FIG. 10E and a shape having a curved surface at the upper end can be obtained.
- the shape as shown in FIG. It can be shaped to have curved surfaces at the upper end and the lower end.
- modules active matrix type liquid crystal module, active matrix type EL module, active matrix type EC module
- active matrix type liquid crystal module active matrix type liquid crystal module
- active matrix type EL module active matrix type EC module
- Such electronic devices include video cameras, digital cameras, head-mounted displays (goggle-type displays), car navigation systems, projectors, power stereos, personal computers, and personal digital assistants (mopile computers, mobile phones or e-books). Etc.). Examples of these are shown in Figs. 11 and 12.
- FIG. 11A shows a personal computer, which includes a main body 2001, an image input unit 2002, a display unit 2003, a keyboard 204, and the like.
- Fig. 11 (B) shows a video camera.
- Main unit 210, display unit 210, audio input unit 210, operation switch 210, battery 210, image receiving unit 2 Includes 106, etc.
- Fig. 11 (C) shows a mobile computer (mobile computer): main body 2201, camera section 222, image receiving section 2203, operation switch 222, display section 222. And so on.
- Fig. 11 (D) shows a player that uses a recording medium on which a program is recorded (hereinafter, referred to as a recording medium).
- DVDs Digital Versatile Discs
- CDs Compact Discs
- FIG. 11E shows a digital camera including a main body 2501, a display portion 2502, an eyepiece portion 2503, an operation switch 2504, an image receiving portion (not shown), and the like.
- FIG. 12A shows a mobile phone, which includes a main body 2901, a voice output unit 2902, a voice input unit 2903, a display unit 2904, an operation switch 2905, an antenna 2906, an image input unit (CCD, image sensor, etc.) 2907, and the like. Including.
- FIG. 12B illustrates a portable book (e-book) including a main body 3001, display portions 3002 and 3003, a storage medium 3004, an operation switch 3005, an antenna 3006, and the like.
- FIG. 12C illustrates a display, which includes a main body 3101, a support 3102, a display portion 3103, and the like.
- the display shown in Fig. 12 (C) is a small, medium or large display, for example, a screen size of 5 to 20 inches.
- a substrate having one side of lm and mass-produce it by performing multi-paneling it is preferable to use a substrate having one side of lm and mass-produce it by performing multi-paneling.
- the applicable range of the present invention is extremely wide, and the present invention can be applied to manufacturing methods of electronic devices in all fields. Further, the electronic apparatus of the present embodiment can be realized by using any combination of the embodiments and Embodiments 1 to 3.
Description
Claims
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