WO2004040616A3 - Feldeffekttransistor sowie verfahren zu seiner herstellung - Google Patents

Feldeffekttransistor sowie verfahren zu seiner herstellung Download PDF

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Publication number
WO2004040616A3
WO2004040616A3 PCT/DE2003/003673 DE0303673W WO2004040616A3 WO 2004040616 A3 WO2004040616 A3 WO 2004040616A3 DE 0303673 W DE0303673 W DE 0303673W WO 2004040616 A3 WO2004040616 A3 WO 2004040616A3
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WO
WIPO (PCT)
Prior art keywords
field effect
effect transistor
production
insulation
gate contact
Prior art date
Application number
PCT/DE2003/003673
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English (en)
French (fr)
Other versions
WO2004040616A2 (de
Inventor
Rolf Koenenkamp
Original Assignee
Hahn Meitner Inst Berlin Gmbh
Rolf Koenenkamp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hahn Meitner Inst Berlin Gmbh, Rolf Koenenkamp filed Critical Hahn Meitner Inst Berlin Gmbh
Priority to DE50312746T priority Critical patent/DE50312746D1/de
Priority to JP2004547438A priority patent/JP2006505119A/ja
Priority to AU2003294616A priority patent/AU2003294616A1/en
Priority to US10/532,190 priority patent/US7659165B2/en
Priority to EP03785496A priority patent/EP1556910B1/de
Priority to AT03785496T priority patent/ATE469443T1/de
Publication of WO2004040616A2 publication Critical patent/WO2004040616A2/de
Publication of WO2004040616A3 publication Critical patent/WO2004040616A3/de

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0657—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body
    • H01L29/0665—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body the shape of the body defining a nanostructure
    • H01L29/0669—Nanowires or nanotubes
    • H01L29/0676—Nanowires or nanotubes oriented perpendicular or at an angle to a substrate
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0657—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body
    • H01L29/0665—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body the shape of the body defining a nanostructure
    • H01L29/0669—Nanowires or nanotubes
    • H01L29/0673—Nanowires or nanotubes oriented parallel to a substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66742—Thin film unipolar transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66787—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a gate at the side of the channel
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/775—Field effect transistors with one dimensional charge carrier gas channel, e.g. quantum wire FET
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7827—Vertical transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78696—Thin film transistors, i.e. transistors with a channel being at least partly a thin film characterised by the structure of the channel, e.g. multichannel, transverse or longitudinal shape, length or width, doping structure, or the overlap or alignment between the channel and the gate, the source or the drain, or the contacting structure of the channel
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having a potential-jump barrier or a surface barrier
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/491—Vertical transistors, e.g. vertical carbon nanotube field effect transistors [CNT-FETs]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K19/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic element specially adapted for rectifying, amplifying, oscillating or switching, covered by group H10K10/00
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/20—Carbon compounds, e.g. carbon nanotubes or fullerenes
    • H10K85/221—Carbon nanotubes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/615—Polycyclic condensed aromatic hydrocarbons, e.g. anthracene
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/10—Resistive cells; Technology aspects
    • G11C2213/17—Memory cell being a nanowire transistor

Abstract

Es ist bereits ein Feldeffekttransistor vorgeschlagen worden, bei dem sich zwischen einem Source- und einem Drainkontakt mindestens eine vertikal ausgerichtete Halbleitersäule mit einem Durchmesser im Nanometerbereich befindet, die unter Belassung eines Isolationsabstandes ringförmig von einem Gatekontakt umgeben ist. Vorgeschlagen wird ein vereinfachtes Herstellungsverfahren. Der so hergestellte Transistor ist so aufgebaut, dass die Halbleitersäulen (2) in eine erste und eine zweite Isolierschicht (3, 5) eingebettet sind, zwischen denen sich eine als Gatekontakt nach aussen geführte Metallschicht (4) befindet, deren nach oben durch die zweite Isolierschicht (5) hindurchtretenden Enden teilweise in einen Isolator (6) umgewandelt oder teilweise entfernt und durch ein Isoliermaterial aufgefüllt sind.
PCT/DE2003/003673 2002-10-29 2003-10-29 Feldeffekttransistor sowie verfahren zu seiner herstellung WO2004040616A2 (de)

Priority Applications (6)

Application Number Priority Date Filing Date Title
DE50312746T DE50312746D1 (de) 2002-10-29 2003-10-29 Verfahren zur herstellung eines feldeffekttransistors
JP2004547438A JP2006505119A (ja) 2002-10-29 2003-10-29 電界効果トランジスタおよび該電界効果トランジスタの製造方法
AU2003294616A AU2003294616A1 (en) 2002-10-29 2003-10-29 Field effect transistor and method for production thereof
US10/532,190 US7659165B2 (en) 2002-10-29 2003-10-29 Method of fabricating a field effect transistor
EP03785496A EP1556910B1 (de) 2002-10-29 2003-10-29 Verfahren zur herstellung eines feldeffekttransistors
AT03785496T ATE469443T1 (de) 2002-10-29 2003-10-29 Verfahren zur herstellung eines feldeffekttransistors

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE10250984.0 2002-10-29
DE10250984A DE10250984A1 (de) 2002-10-29 2002-10-29 Feldeffekttransistor sowie Verfahren zu seiner Herstellung

Publications (2)

Publication Number Publication Date
WO2004040616A2 WO2004040616A2 (de) 2004-05-13
WO2004040616A3 true WO2004040616A3 (de) 2004-07-22

Family

ID=32115093

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/DE2003/003673 WO2004040616A2 (de) 2002-10-29 2003-10-29 Feldeffekttransistor sowie verfahren zu seiner herstellung

Country Status (9)

Country Link
US (1) US7659165B2 (de)
EP (1) EP1556910B1 (de)
JP (1) JP2006505119A (de)
KR (1) KR20050056259A (de)
CN (1) CN100466290C (de)
AT (1) ATE469443T1 (de)
AU (1) AU2003294616A1 (de)
DE (2) DE10250984A1 (de)
WO (1) WO2004040616A2 (de)

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US7374793B2 (en) 2003-12-11 2008-05-20 International Business Machines Corporation Methods and structures for promoting stable synthesis of carbon nanotubes
US7038299B2 (en) 2003-12-11 2006-05-02 International Business Machines Corporation Selective synthesis of semiconducting carbon nanotubes
CN1898784A (zh) * 2003-12-23 2007-01-17 皇家飞利浦电子股份有限公司 包括异质结的半导体器件
US7211844B2 (en) 2004-01-29 2007-05-01 International Business Machines Corporation Vertical field effect transistors incorporating semiconducting nanotubes grown in a spacer-defined passage
US20050167655A1 (en) 2004-01-29 2005-08-04 International Business Machines Corporation Vertical nanotube semiconductor device structures and methods of forming the same
US7829883B2 (en) 2004-02-12 2010-11-09 International Business Machines Corporation Vertical carbon nanotube field effect transistors and arrays
WO2005124888A1 (en) * 2004-06-08 2005-12-29 President And Fellows Of Harvard College Suspended carbon nanotube field effect transistor
GB0413310D0 (en) * 2004-06-15 2004-07-14 Koninkl Philips Electronics Nv Nanowire semiconductor device
US7109546B2 (en) 2004-06-29 2006-09-19 International Business Machines Corporation Horizontal memory gain cells
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US20090299213A1 (en) * 2006-03-15 2009-12-03 President And Fellows Of Harvard College Nanobioelectronics
JP2009540333A (ja) 2006-06-12 2009-11-19 プレジデント アンド フェロウズ オブ ハーバード カレッジ ナノセンサーおよび関連技術
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CN104157686B (zh) * 2014-08-11 2017-02-15 北京大学 一种环栅场效应晶体管及其制备方法
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Also Published As

Publication number Publication date
JP2006505119A (ja) 2006-02-09
CN1708864A (zh) 2005-12-14
KR20050056259A (ko) 2005-06-14
WO2004040616A2 (de) 2004-05-13
EP1556910A2 (de) 2005-07-27
CN100466290C (zh) 2009-03-04
US20060118975A1 (en) 2006-06-08
US7659165B2 (en) 2010-02-09
AU2003294616A1 (en) 2004-05-25
EP1556910B1 (de) 2010-05-26
DE10250984A1 (de) 2004-05-19
ATE469443T1 (de) 2010-06-15
AU2003294616A8 (en) 2004-05-25
DE50312746D1 (de) 2010-07-08

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