WO2004036631A2 - Silicon-containing layer deposition with silicon compounds - Google Patents
Silicon-containing layer deposition with silicon compounds Download PDFInfo
- Publication number
- WO2004036631A2 WO2004036631A2 PCT/US2003/033263 US0333263W WO2004036631A2 WO 2004036631 A2 WO2004036631 A2 WO 2004036631A2 US 0333263 W US0333263 W US 0333263W WO 2004036631 A2 WO2004036631 A2 WO 2004036631A2
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- silicon
- halogen
- germanium
- composition
- containing film
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
- C07F7/00—Compounds containing elements of Groups 4 or 14 of the Periodic System
- C07F7/02—Silicon compounds
- C07F7/08—Compounds having one or more C—Si linkages
- C07F7/0896—Compounds with a Si-H linkage
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/04—Hydrides of silicon
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/08—Compounds containing halogen
- C01B33/107—Halogenated silanes
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
- C07F7/00—Compounds containing elements of Groups 4 or 14 of the Periodic System
- C07F7/02—Silicon compounds
- C07F7/08—Compounds having one or more C—Si linkages
- C07F7/12—Organo silicon halides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/24—Deposition of silicon only
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
Abstract
Description
Claims
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
AU2003301382A AU2003301382A1 (en) | 2002-10-18 | 2003-10-20 | Silicon-containing layer deposition with silicon compounds |
KR1020057006706A KR101144366B1 (en) | 2002-10-18 | 2003-10-20 | Silicon-containing layer deposition with silicon compounds |
JP2004545570A JP2006515955A (en) | 2002-10-18 | 2003-10-20 | Deposition of silicon-containing layers with silicon compounds |
EP03809181.5A EP1563529B1 (en) | 2002-10-18 | 2003-10-20 | Silicon-containing layer deposition with silicon compounds |
Applications Claiming Priority (8)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US41942602P | 2002-10-18 | 2002-10-18 | |
US41937602P | 2002-10-18 | 2002-10-18 | |
US41950402P | 2002-10-18 | 2002-10-18 | |
US60/419,504 | 2002-10-18 | ||
US60/419,426 | 2002-10-18 | ||
US60/419,376 | 2002-10-18 | ||
US10/688,797 US7540920B2 (en) | 2002-10-18 | 2003-10-17 | Silicon-containing layer deposition with silicon compounds |
US10/688,797 | 2003-10-17 |
Publications (2)
Publication Number | Publication Date |
---|---|
WO2004036631A2 true WO2004036631A2 (en) | 2004-04-29 |
WO2004036631A3 WO2004036631A3 (en) | 2004-06-24 |
Family
ID=32111050
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US2003/033263 WO2004036631A2 (en) | 2002-10-18 | 2003-10-20 | Silicon-containing layer deposition with silicon compounds |
Country Status (6)
Country | Link |
---|---|
US (3) | US7540920B2 (en) |
EP (1) | EP1563529B1 (en) |
JP (3) | JP2006515955A (en) |
KR (1) | KR101144366B1 (en) |
AU (1) | AU2003301382A1 (en) |
WO (1) | WO2004036631A2 (en) |
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WO2008009473A1 (en) * | 2006-07-20 | 2008-01-24 | Rev Renewable Energy Ventures Ag | Polysilane processing and use |
JP2008513979A (en) * | 2004-09-14 | 2008-05-01 | アリゾナ ボード オブ リージェンツ ア ボディー コーポレート アクティング オン ビハーフ オブ アリゾナ ステイト ユニバーシティ | Si-Ge semiconductor material and device growth method on a substrate |
WO2008051328A1 (en) * | 2006-10-24 | 2008-05-02 | Dow Corning Corporation | Composition comprising neopentasilane and method of preparing same |
WO2008098640A2 (en) * | 2007-02-14 | 2008-08-21 | Evonik Degussa Gmbh | Method for producing higher silanes |
JP2009512997A (en) * | 2005-08-30 | 2009-03-26 | 東京エレクトロン株式会社 | Intermittent deposition processing method for selective deposition of Si-containing films |
JP2009539264A (en) * | 2006-05-31 | 2009-11-12 | エーエスエム アメリカ インコーポレイテッド | Method and system for selective deposition of Si-containing films using chloropolysilane |
US7915104B1 (en) | 2007-06-04 | 2011-03-29 | The Arizona Board Of Regents, A Body Corporate Of The State Of Arizona Acting For And On Behalf Of Arizona State University | Methods and compositions for preparing tensile strained Ge on Ge1-ySny buffered semiconductor substrates |
US7981392B2 (en) | 2004-09-14 | 2011-07-19 | The Arizona Board Of Regents, A Body Corporate Of The State Of Arizona Acting For And On Behalf Of Arizona State University | Hydride compounds with silicon and germanium core atoms and method of synthesizing same |
JP2012054613A (en) * | 2005-02-04 | 2012-03-15 | Asm America Inc | Selective deposition of silicon-containing film |
US8916425B2 (en) | 2010-07-26 | 2014-12-23 | Semiconductor Energy Laboratory Co., Ltd. | Method for forming microcrystalline semiconductor film and method for manufacturing semiconductor device |
US8969610B2 (en) | 2010-02-26 | 2015-03-03 | Evonik Degussa Gmbh | Method for oligomerizing hydridosilanes, the oligomers that can be produced by means of the method, and the use thereof |
EP3409645A1 (en) | 2017-06-01 | 2018-12-05 | Evonik Degussa GmbH | Triphenylgermylsilane and trichlorsilyl-trichlorgermane for the production of germanium-silicon layers as well as processes for their preparation from trichlorsilyl-triphenylgermane |
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EP3409678A1 (en) | 2017-06-01 | 2018-12-05 | Evonik Degussa GmbH | New halogen germanides and method for their preparation |
EP3653578A1 (en) | 2018-11-14 | 2020-05-20 | Evonik Operations GmbH | Tetrakis(trichlorsilyl) german, method for producing same and its use |
EP3653577A1 (en) | 2018-11-14 | 2020-05-20 | Evonik Operations GmbH | Tris(trichlorsilyl)dichlorogallylgerman, method for producing same and its use |
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WO2021244705A1 (en) | 2020-06-05 | 2021-12-09 | Johann Wolfgang Goethe-Universität | Silylated oligogermanes and polycyclic silicon-germanium compounds, process of preparing same and their use for producing a si- and ge-containing solid |
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US11851342B2 (en) | 2018-11-14 | 2023-12-26 | Evonik Operations Gmbh | Tris(trichlorosily1)dichlorogallylgermane, process for the preparation thereof and use thereof |
CN113015695B (en) * | 2018-11-14 | 2024-03-29 | 赢创运营有限公司 | Tetra (trichlorosilyl) germane, preparation method and application thereof |
WO2021244705A1 (en) | 2020-06-05 | 2021-12-09 | Johann Wolfgang Goethe-Universität | Silylated oligogermanes and polycyclic silicon-germanium compounds, process of preparing same and their use for producing a si- and ge-containing solid |
DE102020114994A1 (en) | 2020-06-05 | 2021-12-09 | Johann Wolfgang Goethe-Universität Frankfurt am Main Stiftung des öffentlichen Rechts | Silylated oligogerman, process for the production of the same and the use of the same for the production of a solid containing Si and Ge |
WO2022111758A1 (en) | 2020-11-27 | 2022-06-02 | Johann Wolfgang Goethe-Universität | Polycyclic silicon-germanium compounds, process of preparing same and their use for producing a si- and ge-containing solid |
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US7758697B2 (en) | 2010-07-20 |
JP2014027294A (en) | 2014-02-06 |
US7645339B2 (en) | 2010-01-12 |
AU2003301382A1 (en) | 2004-05-04 |
US7540920B2 (en) | 2009-06-02 |
KR101144366B1 (en) | 2012-05-21 |
WO2004036631A3 (en) | 2004-06-24 |
US20070240632A1 (en) | 2007-10-18 |
EP1563529A2 (en) | 2005-08-17 |
KR20050074965A (en) | 2005-07-19 |
EP1563529B1 (en) | 2013-12-18 |
JP2010232674A (en) | 2010-10-14 |
JP2006515955A (en) | 2006-06-08 |
US20080102218A1 (en) | 2008-05-01 |
JP5593129B2 (en) | 2014-09-17 |
AU2003301382A8 (en) | 2004-05-04 |
US20040224089A1 (en) | 2004-11-11 |
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