WO2004032183A3 - Realisation d'un substrat semiconducteur demontable et obtention d'un element semiconducteur. - Google Patents
Realisation d'un substrat semiconducteur demontable et obtention d'un element semiconducteur. Download PDFInfo
- Publication number
- WO2004032183A3 WO2004032183A3 PCT/FR2003/050077 FR0350077W WO2004032183A3 WO 2004032183 A3 WO2004032183 A3 WO 2004032183A3 FR 0350077 W FR0350077 W FR 0350077W WO 2004032183 A3 WO2004032183 A3 WO 2004032183A3
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- substrate
- layer
- thin film
- making
- detachable
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
- H01L21/76251—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
- H01L21/76254—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques with separation/delamination along an ion implanted layer, e.g. Smart-cut, Unibond
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Recrystallisation Techniques (AREA)
- Semiconductor Integrated Circuits (AREA)
- Semiconductor Memories (AREA)
- Bipolar Transistors (AREA)
Abstract
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP03780289A EP1550158B1 (fr) | 2002-10-07 | 2003-10-03 | Realisation d un substrat semiconducteur demontable et obten tion d un element semiconducteur. |
JP2005500039A JP4777774B2 (ja) | 2002-10-07 | 2003-10-03 | 剥離可能な半導体基板を形成するための方法ならびに半導体素子を得るための方法 |
AT03780289T ATE539446T1 (de) | 2002-10-07 | 2003-10-03 | Herstellung von einem abnehmbaren halbleitersubstrat und einem halbleiterelement |
US10/530,640 US7238598B2 (en) | 2002-10-07 | 2003-10-03 | Formation of a semiconductor substrate that may be dismantled and obtaining a semiconductor element |
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR02/12443 | 2002-10-07 | ||
FR0212443A FR2845517B1 (fr) | 2002-10-07 | 2002-10-07 | Realisation d'un substrat semiconducteur demontable et obtention d'un element semiconducteur |
FR0350130A FR2845518B1 (fr) | 2002-10-07 | 2003-04-25 | Realisation d'un substrat semiconducteur demontable et obtention d'un element semiconducteur |
FR03/50130 | 2003-04-25 |
Publications (2)
Publication Number | Publication Date |
---|---|
WO2004032183A2 WO2004032183A2 (fr) | 2004-04-15 |
WO2004032183A3 true WO2004032183A3 (fr) | 2004-07-29 |
Family
ID=32031847
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/FR2003/050077 WO2004032183A2 (fr) | 2002-10-07 | 2003-10-03 | Realisation d'un substrat semiconducteur demontable et obtention d'un element semiconducteur. |
Country Status (6)
Country | Link |
---|---|
US (1) | US7238598B2 (fr) |
EP (1) | EP1550158B1 (fr) |
JP (1) | JP4777774B2 (fr) |
AT (1) | ATE539446T1 (fr) |
FR (1) | FR2845518B1 (fr) |
WO (1) | WO2004032183A2 (fr) |
Families Citing this family (23)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4277481B2 (ja) * | 2002-05-08 | 2009-06-10 | 日本電気株式会社 | 半導体基板の製造方法、半導体装置の製造方法 |
JP2006270000A (ja) * | 2005-03-25 | 2006-10-05 | Sumco Corp | 歪Si−SOI基板の製造方法および該方法により製造された歪Si−SOI基板 |
FR2898431B1 (fr) * | 2006-03-13 | 2008-07-25 | Soitec Silicon On Insulator | Procede de fabrication de film mince |
FR2913968B1 (fr) | 2007-03-23 | 2009-06-12 | Soitec Silicon On Insulator | Procede de realisation de membranes autoportees. |
US7856212B2 (en) * | 2007-08-07 | 2010-12-21 | Intel Corporation | Millimeter-wave phase-locked loop with injection-locked frequency divider using quarter-wavelength transmission line and method of calibration |
US7977221B2 (en) * | 2007-10-05 | 2011-07-12 | Sumco Corporation | Method for producing strained Si-SOI substrate and strained Si-SOI substrate produced by the same |
US20090124038A1 (en) * | 2007-11-14 | 2009-05-14 | Mark Ewing Tuttle | Imager device, camera, and method of manufacturing a back side illuminated imager |
US20090212397A1 (en) * | 2008-02-22 | 2009-08-27 | Mark Ewing Tuttle | Ultrathin integrated circuit and method of manufacturing an ultrathin integrated circuit |
JP5347345B2 (ja) * | 2008-06-16 | 2013-11-20 | 旭硝子株式会社 | 導電性マイエナイト型化合物の製造方法 |
WO2010062659A1 (fr) * | 2008-10-28 | 2010-06-03 | Athenaeum, Llc | Système et procédé pour l'assemblage d’un film épitaxial |
US7905197B2 (en) * | 2008-10-28 | 2011-03-15 | Athenaeum, Llc | Apparatus for making epitaxial film |
US20100102419A1 (en) * | 2008-10-28 | 2010-04-29 | Eric Ting-Shan Pan | Epitaxy-Level Packaging (ELP) System |
US7967936B2 (en) * | 2008-12-15 | 2011-06-28 | Twin Creeks Technologies, Inc. | Methods of transferring a lamina to a receiver element |
US7927975B2 (en) | 2009-02-04 | 2011-04-19 | Micron Technology, Inc. | Semiconductor material manufacture |
KR101963421B1 (ko) * | 2011-04-11 | 2019-03-28 | 엔디에스유 리서치 파운데이션 | 별개의 구성요소의 선택적인 레이저 보조 전사 |
US9023729B2 (en) * | 2011-12-23 | 2015-05-05 | Athenaeum, Llc | Epitaxy level packaging |
US9184094B1 (en) * | 2012-01-26 | 2015-11-10 | Skorpios Technologies, Inc. | Method and system for forming a membrane over a cavity |
WO2014020387A1 (fr) | 2012-07-31 | 2014-02-06 | Soitec | Procédés de formation de structures semi-conductrices incluant des dispositifs de microsystème électromécanique et des circuits intégrés sur les côtés opposés de substrats, et structures ainsi que dispositifs connexes |
JP6757953B2 (ja) * | 2016-08-09 | 2020-09-23 | 学校法人 名古屋電気学園 | 表面加工方法、構造体の製造方法 |
CN106896410B (zh) * | 2017-03-09 | 2019-08-23 | 成都理工大学 | 利用声波测井资料解释岩石的变形模量和脆性指数的方法 |
FR3073082B1 (fr) * | 2017-10-31 | 2019-10-11 | Soitec | Procede de fabrication d'un film sur un support presentant une surface non plane |
FR3073083B1 (fr) * | 2017-10-31 | 2019-10-11 | Soitec | Procede de fabrication d'un film sur un feuillet flexible |
FR3094559A1 (fr) * | 2019-03-29 | 2020-10-02 | Soitec | Procédé de transfert de paves d’un substrat donneur sur un substrat receveur |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2748851A1 (fr) * | 1996-05-15 | 1997-11-21 | Commissariat Energie Atomique | Procede de realisation d'une couche mince de materiau semiconducteur |
US5877070A (en) * | 1997-05-31 | 1999-03-02 | Max-Planck Society | Method for the transfer of thin layers of monocrystalline material to a desirable substrate |
EP0961312A2 (fr) * | 1998-05-15 | 1999-12-01 | Canon Kabushiki Kaisha | Substrat du type SOI fabriqué par collage |
FR2797347A1 (fr) * | 1999-08-04 | 2001-02-09 | Commissariat Energie Atomique | Procede de transfert d'une couche mince comportant une etape de surfragililisation |
FR2809867A1 (fr) * | 2000-05-30 | 2001-12-07 | Commissariat Energie Atomique | Substrat fragilise et procede de fabrication d'un tel substrat |
WO2002005344A1 (fr) * | 2000-07-12 | 2002-01-17 | Commissariat A L'energie Atomique | Procede de decoupage d'un bloc de materiau et de formation d'un film mince |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3412470B2 (ja) * | 1997-09-04 | 2003-06-03 | 三菱住友シリコン株式会社 | Soi基板の製造方法 |
EP0926709A3 (fr) * | 1997-12-26 | 2000-08-30 | Canon Kabushiki Kaisha | Méthode de fabrication d'une structure SOI |
JPH11233449A (ja) * | 1998-02-13 | 1999-08-27 | Denso Corp | 半導体基板の製造方法 |
US6291326B1 (en) * | 1998-06-23 | 2001-09-18 | Silicon Genesis Corporation | Pre-semiconductor process implant and post-process film separation |
FR2784795B1 (fr) * | 1998-10-16 | 2000-12-01 | Commissariat Energie Atomique | Structure comportant une couche mince de materiau composee de zones conductrices et de zones isolantes et procede de fabrication d'une telle structure |
US6255195B1 (en) * | 1999-02-22 | 2001-07-03 | Intersil Corporation | Method for forming a bonded substrate containing a planar intrinsic gettering zone and substrate formed by said method |
US6323108B1 (en) * | 1999-07-27 | 2001-11-27 | The United States Of America As Represented By The Secretary Of The Navy | Fabrication ultra-thin bonded semiconductor layers |
JP4450126B2 (ja) * | 2000-01-21 | 2010-04-14 | 日新電機株式会社 | シリコン系結晶薄膜の形成方法 |
TW452866B (en) * | 2000-02-25 | 2001-09-01 | Lee Tien Hsi | Manufacturing method of thin film on a substrate |
FR2816445B1 (fr) * | 2000-11-06 | 2003-07-25 | Commissariat Energie Atomique | Procede de fabrication d'une structure empilee comprenant une couche mince adherant a un substrat cible |
US20020187619A1 (en) * | 2001-05-04 | 2002-12-12 | International Business Machines Corporation | Gettering process for bonded SOI wafers |
-
2003
- 2003-04-25 FR FR0350130A patent/FR2845518B1/fr not_active Expired - Fee Related
- 2003-10-03 JP JP2005500039A patent/JP4777774B2/ja not_active Expired - Fee Related
- 2003-10-03 WO PCT/FR2003/050077 patent/WO2004032183A2/fr active Application Filing
- 2003-10-03 AT AT03780289T patent/ATE539446T1/de active
- 2003-10-03 EP EP03780289A patent/EP1550158B1/fr not_active Expired - Lifetime
- 2003-10-03 US US10/530,640 patent/US7238598B2/en not_active Expired - Fee Related
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2748851A1 (fr) * | 1996-05-15 | 1997-11-21 | Commissariat Energie Atomique | Procede de realisation d'une couche mince de materiau semiconducteur |
US5877070A (en) * | 1997-05-31 | 1999-03-02 | Max-Planck Society | Method for the transfer of thin layers of monocrystalline material to a desirable substrate |
EP0961312A2 (fr) * | 1998-05-15 | 1999-12-01 | Canon Kabushiki Kaisha | Substrat du type SOI fabriqué par collage |
FR2797347A1 (fr) * | 1999-08-04 | 2001-02-09 | Commissariat Energie Atomique | Procede de transfert d'une couche mince comportant une etape de surfragililisation |
FR2809867A1 (fr) * | 2000-05-30 | 2001-12-07 | Commissariat Energie Atomique | Substrat fragilise et procede de fabrication d'un tel substrat |
WO2002005344A1 (fr) * | 2000-07-12 | 2002-01-17 | Commissariat A L'energie Atomique | Procede de decoupage d'un bloc de materiau et de formation d'un film mince |
Also Published As
Publication number | Publication date |
---|---|
FR2845518B1 (fr) | 2005-10-14 |
WO2004032183A2 (fr) | 2004-04-15 |
EP1550158B1 (fr) | 2011-12-28 |
JP4777774B2 (ja) | 2011-09-21 |
EP1550158A2 (fr) | 2005-07-06 |
US20060019476A1 (en) | 2006-01-26 |
US7238598B2 (en) | 2007-07-03 |
FR2845518A1 (fr) | 2004-04-09 |
ATE539446T1 (de) | 2012-01-15 |
JP2006502593A (ja) | 2006-01-19 |
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