WO2004030013A2 - Baffle plate in a plasma processing system - Google Patents
Baffle plate in a plasma processing system Download PDFInfo
- Publication number
- WO2004030013A2 WO2004030013A2 PCT/IB2003/004943 IB0304943W WO2004030013A2 WO 2004030013 A2 WO2004030013 A2 WO 2004030013A2 IB 0304943 W IB0304943 W IB 0304943W WO 2004030013 A2 WO2004030013 A2 WO 2004030013A2
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- baffle plate
- recited
- entrant
- exposed surfaces
- protective barrier
- Prior art date
Links
- 238000012545 processing Methods 0.000 title claims abstract description 79
- 238000000034 method Methods 0.000 claims abstract description 88
- 230000013011 mating Effects 0.000 claims description 48
- 230000004888 barrier function Effects 0.000 claims description 47
- 230000001681 protective effect Effects 0.000 claims description 47
- 238000002048 anodisation reaction Methods 0.000 claims description 23
- 238000003754 machining Methods 0.000 claims description 22
- RUDFQVOCFDJEEF-UHFFFAOYSA-N yttrium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[Y+3].[Y+3] RUDFQVOCFDJEEF-UHFFFAOYSA-N 0.000 claims description 14
- 229910052782 aluminium Inorganic materials 0.000 claims description 11
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 11
- 238000005498 polishing Methods 0.000 claims description 11
- 238000007743 anodising Methods 0.000 claims description 10
- 230000000873 masking effect Effects 0.000 claims description 8
- 230000015572 biosynthetic process Effects 0.000 claims description 7
- 150000001875 compounds Chemical class 0.000 claims description 7
- 229910052684 Cerium Inorganic materials 0.000 claims description 5
- 229910052692 Dysprosium Inorganic materials 0.000 claims description 5
- 229910052693 Europium Inorganic materials 0.000 claims description 5
- 229910009527 YF3 Inorganic materials 0.000 claims description 5
- CETPSERCERDGAM-UHFFFAOYSA-N ceric oxide Chemical compound O=[Ce]=O CETPSERCERDGAM-UHFFFAOYSA-N 0.000 claims description 5
- ZMIGMASIKSOYAM-UHFFFAOYSA-N cerium Chemical compound [Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce] ZMIGMASIKSOYAM-UHFFFAOYSA-N 0.000 claims description 5
- 229910000422 cerium(IV) oxide Inorganic materials 0.000 claims description 5
- KBQHZAAAGSGFKK-UHFFFAOYSA-N dysprosium atom Chemical compound [Dy] KBQHZAAAGSGFKK-UHFFFAOYSA-N 0.000 claims description 5
- OGPBJKLSAFTDLK-UHFFFAOYSA-N europium atom Chemical compound [Eu] OGPBJKLSAFTDLK-UHFFFAOYSA-N 0.000 claims description 5
- RSEIMSPAXMNYFJ-UHFFFAOYSA-N europium(III) oxide Inorganic materials O=[Eu]O[Eu]=O RSEIMSPAXMNYFJ-UHFFFAOYSA-N 0.000 claims description 5
- 229910052746 lanthanum Inorganic materials 0.000 claims description 5
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 claims description 5
- MRELNEQAGSRDBK-UHFFFAOYSA-N lanthanum oxide Inorganic materials [O-2].[O-2].[O-2].[La+3].[La+3] MRELNEQAGSRDBK-UHFFFAOYSA-N 0.000 claims description 5
- 229910052751 metal Inorganic materials 0.000 claims description 5
- 239000002184 metal Substances 0.000 claims description 5
- 229910052706 scandium Inorganic materials 0.000 claims description 5
- SIXSYDAISGFNSX-UHFFFAOYSA-N scandium atom Chemical compound [Sc] SIXSYDAISGFNSX-UHFFFAOYSA-N 0.000 claims description 5
- 229910052727 yttrium Inorganic materials 0.000 claims description 5
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 claims description 5
- -1 SC2F3 Inorganic materials 0.000 claims description 4
- 238000005266 casting Methods 0.000 claims description 4
- 238000005242 forging Methods 0.000 claims description 4
- 238000000227 grinding Methods 0.000 claims description 4
- HYXGAEYDKFCVMU-UHFFFAOYSA-N scandium(III) oxide Inorganic materials O=[Sc]O[Sc]=O HYXGAEYDKFCVMU-UHFFFAOYSA-N 0.000 claims description 4
- KTUFCUMIWABKDW-UHFFFAOYSA-N oxo(oxolanthaniooxy)lanthanum Chemical compound O=[La]O[La]=O KTUFCUMIWABKDW-UHFFFAOYSA-N 0.000 claims 4
- 238000004519 manufacturing process Methods 0.000 abstract description 4
- 238000013461 design Methods 0.000 abstract description 2
- 230000003628 erosive effect Effects 0.000 abstract description 2
- 239000000758 substrate Substances 0.000 description 36
- 230000003287 optical effect Effects 0.000 description 15
- 230000008021 deposition Effects 0.000 description 12
- 239000010410 layer Substances 0.000 description 12
- 238000005507 spraying Methods 0.000 description 12
- 239000007789 gas Substances 0.000 description 9
- 239000000463 material Substances 0.000 description 7
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 7
- 238000010586 diagram Methods 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 4
- 238000012546 transfer Methods 0.000 description 4
- 244000137852 Petrea volubilis Species 0.000 description 3
- 239000000919 ceramic Substances 0.000 description 3
- 238000007796 conventional method Methods 0.000 description 3
- 238000000576 coating method Methods 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 238000012423 maintenance Methods 0.000 description 2
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- 230000004048 modification Effects 0.000 description 2
- BSYNRYMUTXBXSQ-UHFFFAOYSA-N Aspirin Chemical compound CC(=O)OC1=CC=CC=C1C(O)=O BSYNRYMUTXBXSQ-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 239000002826 coolant Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000009616 inductively coupled plasma Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 230000001902 propagating effect Effects 0.000 description 1
- 239000011253 protective coating Substances 0.000 description 1
- 238000005086 pumping Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 230000002459 sustained effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32623—Mechanical discharge control means
- H01J37/32633—Baffles
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32623—Mechanical discharge control means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
- H01J37/32816—Pressure
- H01J37/32834—Exhausting
Definitions
- the present invention relates to an improved component for a plasma processing system and, more particularly, to a baffle plate employed in a plasma processing system surrounding a substrate holder.
- IC integrated circuits
- plasma is formed within the plasma reactor under vacuum conditions by heating electrons to energies sufficient to sustain ionizing collisions with a supplied process gas.
- the heated electrons can have energy sufficient to sustain dissociative collisions and, therefore, a specific set of gases under predetermined conditions (e.g., chamber pressure, gas flow rate, etc.) are chosen to produce a population of charged species and chemically reactive species suitable to the particular process being performed within the chamber (e.g., etching processes where materials are removed from the substrate or deposition processes where materials are added to the substrate).
- components of the plasma processing system are coated with a protective barrier.
- a protective barrier For example, components fabricated from aluminum can be anodized to produce a surface layer of aluminum oxide, which is more resistant to the plasma.
- a consumable or replaceable component such as one fabricated from silicon, quartz, alumina, carbon, or silicon carbide, can be inserted within the processing chamber to protect the surfaces of more valuable components that would impose greater costs during frequent replacement.
- the present invention provides an improved baffle plate for a plasma processing system, wherein the design and fabrication of the baffle plate advantageously addresses the above-identified shortcomings.
- the upper surface can further comprise a first mating surface proximate the outer radial edge.
- the lower surface can further comprise a second mating surface proximate the outer radial edge and a plurality of fastener mating surfaces proximate the inner radial edge.
- the baffle plate can further comprise at least one passageway coupled to the upper surface and to the lower surface, and configured to permit the flow of gas therethrough, wherein the at least one passageway can comprise an inner passageway surface.
- Each fastening receptor can comprise an entrant cavity, an exit through-hole, and an inner receptor surface.
- baffle plate comprising a plurality of mounting through-holes, each mounting through-hole coupled to the upper surface and the lower surface, and configured to receive fastening devices to couple the baffle plate to the plasma processing system.
- the baffle plate further comprises a protective barrier formed on exposed surfaces of the baffle plate facing the processing plasma.
- the exposed surfaces of the baffle plate comprise the upper surface of the baffle plate excluding the first mating surface; the lower surface of the baffle plate excluding the plurality of fastener mating surfaces and the second mating surface; and the inner passageway surface contiguous with the upper surface and the lower surface.
- the present invention optionally can include also identifying the first entrant surface of each of the plurality of fastening receptors and the first lip surface of each of the plurality of fastening receptors as exposed surfaces.
- the present invention further provides a method of producing the baffle plate in the plasma processing system comprising the steps: fabricating the baffle plate; anodizing the baffle plate to form a surface anodization layer on the baffle plate; machining exposed surfaces on the baffle plate to remove the surface anodization layer; and forming a protective barrier on the exposed surfaces.
- the present invention provides another method of producing the baffle plate in the plasma processing system comprising the steps: fabricating the baffle plate; masking exposed surfaces on the baffle plate to prevent formation of a surface anodization layer; anodizing the baffle plate to form the surface anodization layer on the baffle plate; unmasking the exposed surfaces; and forming a protective barrier on the exposed surfaces.
- the present invention provides another method of producing the baffle plate in the plasma processing system comprising the steps: fabricating the baffle plate; and forming a protective barrier on a plurality of exposed surfaces.
- the present invention may also include a process of combining machining and masking to prepare the exposed surfaces to receive the protective barrier, and then forming the protective barrier on the exposed surfaces. For example, two of the exposed surfaces can be masked prior to anodizing, and two of the surfaces can be machined after anodizing to create four exposed surfaces on which the protective barrier can be formed.
- Any of the above methods may also optionally include machining anodized (or otherwise coated) surfaces that are not exposed surfaces (e.g., to obtain a bare metal connection where the machined surface will mate with another part).
- FIG. 1 shows a simplified block diagram of a plasma processing system comprising a baffle plate according to an embodiment of the present invention
- FIG. 2 shows a plan view of a baffle plate for a plasma processing system according to an embodiment of the present invention
- FIG. 3 shows a cross sectional view of a baffle plate for a plasma processing system according to an embodiment of the present invention
- FIG. 4 shows an expanded cross sectional view taken along a minor axis of one passageway formed within a baffle plate for a plasma processing system according to an embodiment of the present invention
- FIG. 5A shows an expanded view of one passageway formed within an upper surface of a baffle plate for a plasma processing system according to an embodiment of the present invention
- FIG. 5B shows an expanded cross sectional view taken along a major axis of one passageway formed within a baffle plate for a plasma processing system according to an embodiment of the present invention
- FIG. 5C shows an expanded view of one passageway formed within a lower surface of a baffle plate for a plasma processing system according to an embodiment of the present invention
- FIG. 6 presents an expanded view of an inner radial edge of a baffle plate for a plasma processing system according to an embodiment of the present invention
- FIG. 7 presents an expanded view of an outer radial edge of a baffle plate for a plasma processing system according to an embodiment of the present invention
- FIG. 8 presents a method of producing a baffle plate for a plasma processing system according to an embodiment of the present invention
- FIG. 9 presents a method of producing a baffle plate for a plasma processing system according to another embodiment of the present invention.
- FIG. 10 presents a method of producing a baffle plate for a plasma processing system according to another embodiment of the present invention.
- a plasma processing system 1 is depicted in FIG. 1 comprising a plasma processing chamber 10, an upper assembly 20, an upper electrode 22, a substrate holder 30 for supporting a substrate 35, and a pumping duct 40 coupled to a vacuum pump (not shown) for providing a reduced pressure atmosphere 11 in plasma processing chamber 10.
- Plasma processing chamber 10 can facilitate the formation of a processing plasma in process space 12 adjacent substrate 35.
- the plasma processing system 1 can be configured to process 200 mm substrates, 300 mm substrates, or larger.
- upper electrode 22 comprises an electrode plate 24 (FIG. 1) with a deposition shield 26 (FIG. 1).
- upper assembly 20 can comprise at least one of a cover, a gas injection assembly, and an upper electrode impedance match network.
- the upper electrode 22 can be coupled to an RF source.
- the upper assembly 20 comprises a cover coupled to the upper electrode 22, wherein the upper electrode 22 is maintained at an electrical potential equivalent to that of the plasma processing chamber 10.
- the plasma processing chamber 10, the upper assembly 20, and the upper electrode 22 can be electrically connected to ground potential.
- Plasma processing chamber 10 can, for example, further comprise an optical viewport 16 coupled to the deposition shield 26 of upper electrode 22.
- Optical viewport 16 can comprise an optical window 17 coupled to the backside of an optical window deposition shield 18, and an optical window flange 19 can be configured to couple optical window 17 to the optical window deposition shield 18. Sealing members, such as O-rings, can be provided between the optical window flange 19 and the optical window 17, between the optical window 17 and the optical window deposition shield 18, and between the optical window deposition shield 18 and the plasma processing chamber 10. Optical viewport 16 can, for example, permit monitoring of optical emission from the processing plasma in process space 12.
- Substrate holder 30 can, for example, further comprise a vertical translational device 50 surrounded by a bellows 52 coupled to the substrate holder 30 and the plasma processing chamber 10, and configured to seal the vertical translational device 50 from the reduced pressure atmosphere 11 in plasma processing chamber 10.
- a bellows shield 54 can, for example, be coupled to the substrate holder 30 and configured to protect the bellows 52 from the processing plasma.
- Substrate holder 10 can, for example, further be coupled to at least one of a focus ring 60, and a shield ring 62.
- a baffle plate 64 can extend about a periphery of the substrate holder 30.
- Substrate 35 can be, for example, transferred into and out of plasma processing chamber 10 through a slot valve (not shown) and chamber feed- through (not shown) via robotic substrate transfer system where it is received by substrate lift pins (not shown) housed within substrate holder 30 and mechanically translated by devices housed therein. Once substrate 35 is received from substrate transfer system, it is lowered to an upper surface of substrate holder 30. [0036] Substrate 35 can be, for example, affixed to the substrate holder 30 via an electrostatic clamping system.
- substrate holder 30 can, for example, further include a cooling system including a re-circulating coolant flow that receives heat from substrate holder 30 and transfers heat to a heat exchanger system (not shown), or when heating, transfers heat from the heat exchanger system.
- gas can, for example, be delivered to the back-side of substrate 35 via a backside gas system to improve the gas-gap thermal conductance between substrate 35 and substrate holder 30.
- a cooling system including a re-circulating coolant flow that receives heat from substrate holder 30 and transfers heat to a heat exchanger system (not shown), or when heating, transfers heat from the heat exchanger system.
- gas can, for example, be delivered to the back-side of substrate 35 via a backside gas system to improve the gas-gap thermal conductance between substrate 35 and substrate holder 30.
- Such a system can be utilized when temperature control of the substrate is required at elevated or reduced temperatures.
- heating elements such as resistive heating elements, or thermo-electric heaters/coolers can be included.
- substrate holder 30 can comprise an electrode through which RF power is coupled to the processing plasma in process space 12.
- substrate holder 30 can be electrically biased at a RF voltage via the transmission of RF power from a RF generator (not shown) through an impedance match network (not shown) to substrate holder 30.
- the RF bias can serve to heat electrons to form and maintain plasma.
- the system can operate as a reactive ion etch (RIE) reactor, wherein the chamber and upper gas injection electrode serve as ground surfaces.
- RIE reactive ion etch
- a typical frequency for the RF bias can range from 1 MHz to 100 MHz and is preferably 13.56 MHz.
- RF systems for plasma processing are well known to those skilled in the art.
- the processing plasma formed in process space 12 can be formed using a parallel-plate, capacitively coupled plasma (CCP) source, an inductively coupled plasma (ICP) source, any combination thereof, and with and without magnet systems.
- the processing plasma in process space 12 can be formed using electron cyclotron resonance (ECR).
- ECR electron cyclotron resonance
- the processing plasma in process space 12 is formed from the launching of a Helicon wave.
- the processing plasma in process space 12 is formed from a propagating surface wave.
- baffle plate 64 can form a ring comprising an upper surface 82, a lower surface 84, an inner radial edge 86, and an outer radial edge 88.
- the baffle plate 64 can further comprise at least one passageway 90 coupled to the upper surface 82 and to the lower surface 84, and configured to permit the flow of gas therethrough.
- FIG. 4 provides an expanded view of one of the passageways 90, wherein the expanded view provides a transverse cross sectional view taken along a minor axis of the passageway 90.
- Each passageway 90 comprises an inner passageway surface 92 contiguous with the upper surface 82 and the lower surface 84 of the baffle plate 64.
- At least one passageway 90 can comprise a length, dictated by the distance between the upper surface 82 and the lower surface 84 proximate each passageway 90, having a dimensional range from 1 to 50 mm. Desirably, the length comprises a dimensional range from 1 to 10 mm, and preferably the length is at least 5 mm.
- FIGs. 5A, 5B, and 5C provide an exemplary cross-sectional view of passageway 90 at the upper surface 82 of baffle plate 64, an additional expanded cross-sectional view of passageway 90 taken along a major axis of the passageway 90, and an exemplary cross-sectional view of passageway 90 at the lower surface 84 of baffle plate 64, respectively.
- the at least one passageway 90 can comprise slots aligned in a radial direction. In an alternate embodiment of the present invention, the slots can be aligned in an azimuthal direction.
- the slots can be slanted and, therefore, aligned partially in a radial direction and an azimuthal direction.
- the passageways 90 can comprise a combination of alignment methodologies thereof.
- the passageways can include at least one orifice.
- the cross sectional view of the passageway 90 at the upper surface 82 comprises a cross sectional entrance area 91a that is greater than the respective cross sectional exit area 91b depicted in the cross sectional view of the passageway 90 at the lower surface 84.
- the cross sectional area can be, for example, constant along the length of the passageway from the upper surface 82 to the lower surface 84.
- the cross-sectional exit area 91b of the passageway 90 at the lower surface 84 can, for example, comprise a cross-sectional area greater than the respective cross-sectional entrance area 91a of the passageway 90 at the upper surface 82.
- baffle plate 64 can, for example, further comprise a plurality of fastening receptors 100.
- Each fastening receptor 100 can be coupled to the upper surface 82 and the lower surface 84, and configured to receive fastening devices (not shown) (such as bolts) to couple baffle plate 64 to substrate holder 30.
- the fastening receptors 100 can comprise a first entrant cavity 102, a second entrant cavity 103, and an exit through-hole 104. Alternately, second entrant cavity 103 is not required.
- the number of fastening receptors 100 formed within baffle plate 64 can range from 0 to 100. Desirably, the number of fastening receptors 100 ranges from 5 to 20; and, preferably, the number of fastening receptors 100 equals 12 fastening receptors.
- FIG. 6 depicts an expanded cross sectional view of the inner radial edge 86 of baffle plate 64 comprising one of the plurality of fastening receptors 100.
- the inner radial edge 86 can further comprise an inner edge surface 112 and a plurality of fastener mating surfaces 113.
- the inner edge surface 112 can be coupled to the upper surface 82 and the lower surface 84 of baffle plate 64.
- At _ ⁇ least one of the fastener mating surfaces 113 can be coupled to and coincident with the lower surface 84 of baffle plate 64 and configured to mate the baffle plate 64 with substrate holder 30.
- FIG. 1 depicts an expanded cross sectional view of the inner radial edge 86 of baffle plate 64 comprising one of the plurality of fastening receptors 100.
- the inner radial edge 86 can further comprise an inner edge surface 112 and a plurality of fastener mating surfaces 113.
- the inner edge surface 112 can be coupled to the upper surface 82 and the lower surface
- the fastening receptor 100 can include an inner receptor surface 106 that can further comprise a first entrant surface 107, a first lip surface 108, a second entrant surface 109, a second lip surface 110, and an exit surface 111.
- the inner radial edge 86 can comprise a minimum thickness, dictated by a distance between the upper surface 82 and the lower surface 84 proximate the inner radial edge 86, having a dimensional range from 1 to 50 mm. Desirably, the minimum thickness comprises a dimensional range from 1 to 10 mm, and preferably the minimum thickness is at least 2 mm.
- FIG. 7 provides an expanded cross sectional view of the outer radial edge 88 of baffle plate 64.
- the outer radial edge 88 can further comprise an outer edge surface 114, a first mating surface 116, and a second mating surface 118.
- the outer edge surface 114 can be coupled to the upper surface 82 and the lower surface 84 of baffle plate 64.
- the first mating surface 116 can be coupled to and coincident with a portion of the upper surface 82, and configured to mate with plasma processing system 1.
- the second mating surface 118 can be coupled to and coincident with a portion of the lower surface 84, and configured to mate with plasma processing system 1.
- first and second mating surfaces can be used to mate baffle plate 64 with at least one of a deposition shield 14 and a plasma processing chamber 10.
- the outer radial edge 88 can comprise a thickness, dictated by the distance between the first mating surface 116 and the second mating surface 118 proximate the outer radial edge 88, having a dimensional range from 1 to 50 mm. Desirably, the thickness comprises a dimensional range from 1 to 10 mm, and preferably the thickness is at least 7 mm.
- baffle plate 64 can, for example, further comprise a plurality of mounting through-holes 101.
- Each mounting through-hole 101 can be coupled to the upper surface 82 and the lower surface 84, and configured to receive fastening devices (not shown) (such as bolts) to couple baffle plate 64 to at least one of the plasma processing chamber 10 and the deposition shield 26 of the upper electrode 22.
- the number of mounting through-holes 101 formed within baffle plate 64 can range from 0 to 100. Desirably, the number of mounting through-holes 101 ranges from 5 to 20; and, preferably, the number of mounting through-holes 101 is at least 10.
- the baffle plate 64 further comprises a protective barrier 150 formed on a plurality of exposed surfaces 145 of the baffle plate 64.
- the exposed surfaces 145 can comprise the upper surface 82 of baffle plate 64 excluding the first mating surface 116; the lower surface 84 of baffle plate 64 excluding the plurality of fastener mating surfaces 113 and the second mating surface 118; and the inner passageway surface 92 contiguous with the upper surface 82 and the lower surface 84.
- the exposed surfaces 145 can comprise the first entrant surface 107 of each of the plurality of fastening receptors 100; and the first lip surface 108 of each of the plurality of fastening receptors 100.
- the exposed surfaces comprise all surfaces on the baffle plate 64.
- the protective barrier 150 can comprise a compound including an oxide of aluminum such as AI 2 O 3 .
- the protective barrier 150 can comprise a mixture of AI 2 O 3 and Y 2 O 3 .
- the protective barrier 150 can comprise at least one of a Ill-column element (column III of periodic table) and a Lanthanon element.
- the Ill-column element can comprise at least one of Yttrium, Scandium, and Lanthanum.
- the Lanthanon element can comprise at least one of Cerium, Dysprosium, and Europium.
- the compound forming protective barrier 150 can comprise at least one of Yttria (Y 2 O 3 ), Sc 2 O 3 , Sc 2 F 3 , YF 3 , La 2 0 3 , CeO 2 , Eu 2 O 3 , and DyO 3 .
- the protective barrier 150 formed on baffle plate 64 comprises a thermal sprayed coating having a minimum thickness, wherein the minimum thickness can be allowed to vary across the , plurality of exposed surfaces 145.
- the specified thickness can be variable across the exposed surfaces 145.
- the minimum thickness can be constant over a first portion of the exposed surfaces 145 and variable over a second portion of the exposed surfaces 145.
- a variable thickness can occur on a curved surface, on a corner, or in a hole.
- the minimum thickness ranges from 0 micron to 550 micron. Desirably, the minimum thickness ranges from 50 micron to 250 micron; and, preferably, the minimum thickness ranges from 150 micron to 250 micron.
- FIG. 8 presents a method of producing the baffle plate 64 in the plasma processing system described in FIG. 1 according to an embodiment of the present invention.
- a flow diagram 300 begins in 310 with fabricating the baffle plate 64 (e.g., a baffle plate having the characteristics of the plate described with reference to FIGs. 2-7).
- Fabricating the baffle plate can comprise at least one of machining, casting, polishing, forging, and grinding.
- each of the elements described above can be machined according to specifications set forth on a mechanical drawing, using conventional techniques including a mill, a lathe, etc.
- the techniques for machining a component using, for example, a mill or a lathe are well known to those skilled in the art of machining.
- the baffle plate can, for example, be fabricated from aluminum.
- the baffle plate is anodized to form a surface anodization layer.
- the surface anodization layer comprises aluminum oxide (AI 2 O 3 ).
- AI 2 O 3 aluminum oxide
- Methods of anodizing aluminum components are well known to those skilled in the art of surface anodization.
- the surface anodization layer is removed from the exposed surfaces 145 using standard machining techniques. During the same machining step, or during a separate machining step, other surfaces (e.g., the first mating surface of the upper surface, the second mating surface of the lower surface, and the plurality of fastener mating surfaces of the lower surface) may also be machined (e.g., to produce a flat or bare surface that provides at least one of a good mechanical or electrical contact at the machined surface).
- the protective barrier 150 is formed on the exposed surfaces 145.
- a protective barrier 150 comprising, for example Yttria, can be formed using (thermal) spray coating techniques that are well known to those skilled in the art of ceramic spray coatings.
- forming the protective barrier can further comprise polishing the thermal spray coating.
- polishing the thermal spray coating can comprise the application of sand paper to the sprayed surfaces.
- FIG. 9 presents a method of producing the baffle plate in the plasma processing system described in FIG. 1 according to another embodiment of the present invention.
- a flow diagram 400 begins in 410 with fabricating the baffle plate 64 (e.g., a baffle plate having the characteristics of the plate described with reference to FIGs. 2-7).
- Fabricating the baffle plate can comprise at least one of machining, casting, polishing, forging, and grinding.
- each of the elements described above can be machined according to specifications set forth on a mechanical drawing, using conventional techniques including a mill, a lathe, etc.
- the techniques for machining a component using, for example, a mill or a lathe are well known to those skilled in the art of machining.
- the baffle plate can, for example, be fabricated from aluminum.
- exposed surfaces 145 are masked to prevent the formation of a surface anodization layer thereon.
- Techniques for surface masking and unmasking are well known to those skilled in the art of surface coatings and surface anodization.
- other surfaces e.g., the first mating surface of the upper surface, the second mating surface of the lower surface, and the plurality of fastener mating surfaces of the lower surface
- may also be masked e.g., to maintain a flat or bare surface that provides at least one of a good mechanical or electrical contact at the machined surface).
- the baffle plate is anodized to form a surface anodization layer on the remaining unmasked surfaces.
- the surface anodization layer can comprise aluminum oxide (AI 2 O 3 ). Methods of anodizing aluminum components are well known to those skilled in the art of surface anodization.
- the protective barrier 150 is formed on the exposed surfaces.
- a protective barrier comprising, for example Yttria, can be formed using (thermal) spray coating techniques that are well known to those skilled in the art of ceramic spray coatings.
- forming the protective barrier can further comprise polishing the thermal spray coating.
- polishing the thermal spray coating can comprise the application of sand paper to the sprayed surfaces.
- FIG. 10 presents a method of producing the baffle plate in the plasma processing system described in FIG. 1 according to another embodiment of the present invention.
- a flow diagram 500 begins in 510 with fabricating the baffle plate 64 (e.g., a baffle plate having the characteristics of the plate described with reference to FIGs. 2-7).
- Fabricating the baffle plate can comprise at least one of machining, casting, polishing, forging, and grinding.
- each of the elements described above can be machined according to specifications set forth on a mechanical drawing, using conventional techniques including a mill, a lathe, etc.
- the techniques for machining a component using, for example, a mill or a lathe are well known to those skilled in the art of machining.
- the baffle plate can, for example, be fabricated from aluminum.
- a protective barrier 150 is formed on exposed surfaces 145 of the baffle plate 64.
- a protective barrier comprising, for example Yttria, can be formed using (thermal) spray coating techniques that are well known to those skilled in the art of ceramic spray coatings.
- forming the protective barrier can further comprise polishing the thermal spray coating.
- polishing the thermal spray coating can comprise the application of sand paper to the sprayed surfaces.
- the processes of forming a protective barrier 150 on the exposed surfaces 145, described with reference to FIGs. 8-10 can be modified to utilize a combination of machining and masking.
- at least one exposed surface is masked to prevent formation of the anodization layer thereon while other exposed surfaces are anodized.
- the exposed surfaces that are unmasked are then machined, and the exposed surfaces that were masked are unmasked.
- the protective barrier 150 can then be formed on all the exposed surfaces.
- additional surfaces that are not exposed surfaces may also be machined during the method (e.g., in order to provide a better mechanical or electrical contact than would be formed with the anodization layer thereon.
Abstract
Description
Claims
Priority Applications (2)
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JP2004539388A JP4627660B2 (en) | 2002-09-30 | 2003-09-29 | Apparatus for improved baffle plates in plasma processing systems. |
AU2003274581A AU2003274581A1 (en) | 2002-09-30 | 2003-09-29 | Baffle plate in a plasma processing system |
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US10/259,382 US6837966B2 (en) | 2002-09-30 | 2002-09-30 | Method and apparatus for an improved baffle plate in a plasma processing system |
US10/259,382 | 2002-09-30 |
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WO2004030013A2 true WO2004030013A2 (en) | 2004-04-08 |
WO2004030013A3 WO2004030013A3 (en) | 2004-09-16 |
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US (3) | US6837966B2 (en) |
JP (1) | JP4627660B2 (en) |
KR (1) | KR100733167B1 (en) |
CN (1) | CN100380564C (en) |
AU (1) | AU2003274581A1 (en) |
WO (1) | WO2004030013A2 (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2008523613A (en) * | 2004-12-08 | 2008-07-03 | 東京エレクトロン株式会社 | Method and apparatus for improved baffle plate |
US8012305B2 (en) | 2006-08-11 | 2011-09-06 | Tokyo Electron Limited | Exhaust assembly for a plasma processing system |
Families Citing this family (58)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3510993B2 (en) * | 1999-12-10 | 2004-03-29 | トーカロ株式会社 | Plasma processing container inner member and method for manufacturing the same |
TW514996B (en) * | 1999-12-10 | 2002-12-21 | Tokyo Electron Ltd | Processing apparatus with a chamber having therein a high-corrosion-resistant sprayed film |
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JP2002198355A (en) * | 2000-12-26 | 2002-07-12 | Tokyo Electron Ltd | Plasma treatment apparatus |
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US20040129218A1 (en) * | 2001-12-07 | 2004-07-08 | Toshiki Takahashi | Exhaust ring mechanism and plasma processing apparatus using the same |
US7147749B2 (en) | 2002-09-30 | 2006-12-12 | Tokyo Electron Limited | Method and apparatus for an improved upper electrode plate with deposition shield in a plasma processing system |
US7166166B2 (en) * | 2002-09-30 | 2007-01-23 | Tokyo Electron Limited | Method and apparatus for an improved baffle plate in a plasma processing system |
US6798519B2 (en) * | 2002-09-30 | 2004-09-28 | Tokyo Electron Limited | Method and apparatus for an improved optical window deposition shield in a plasma processing system |
US7166200B2 (en) * | 2002-09-30 | 2007-01-23 | Tokyo Electron Limited | Method and apparatus for an improved upper electrode plate in a plasma processing system |
US7204912B2 (en) * | 2002-09-30 | 2007-04-17 | Tokyo Electron Limited | Method and apparatus for an improved bellows shield in a plasma processing system |
US7137353B2 (en) * | 2002-09-30 | 2006-11-21 | Tokyo Electron Limited | Method and apparatus for an improved deposition shield in a plasma processing system |
US6837966B2 (en) * | 2002-09-30 | 2005-01-04 | Tokyo Electron Limeted | Method and apparatus for an improved baffle plate in a plasma processing system |
US7780786B2 (en) | 2002-11-28 | 2010-08-24 | Tokyo Electron Limited | Internal member of a plasma processing vessel |
US6844260B2 (en) * | 2003-01-30 | 2005-01-18 | Micron Technology, Inc. | Insitu post atomic layer deposition destruction of active species |
JP4532479B2 (en) * | 2003-03-31 | 2010-08-25 | 東京エレクトロン株式会社 | A barrier layer for a processing member and a method of forming the same. |
US20050011447A1 (en) * | 2003-07-14 | 2005-01-20 | Tokyo Electron Limited | Method and apparatus for delivering process gas to a process chamber |
US7001482B2 (en) * | 2003-11-12 | 2006-02-21 | Tokyo Electron Limited | Method and apparatus for improved focus ring |
US7461614B2 (en) * | 2003-11-12 | 2008-12-09 | Tokyo Electron Limited | Method and apparatus for improved baffle plate |
US8349128B2 (en) * | 2004-06-30 | 2013-01-08 | Applied Materials, Inc. | Method and apparatus for stable plasma processing |
US20060000802A1 (en) * | 2004-06-30 | 2006-01-05 | Ajay Kumar | Method and apparatus for photomask plasma etching |
US20060037702A1 (en) * | 2004-08-20 | 2006-02-23 | Tokyo Electron Limited | Plasma processing apparatus |
US7601242B2 (en) * | 2005-01-11 | 2009-10-13 | Tokyo Electron Limited | Plasma processing system and baffle assembly for use in plasma processing system |
JP4409459B2 (en) * | 2005-02-17 | 2010-02-03 | 東京エレクトロン株式会社 | Plasma processing apparatus and its component and component life detection method |
US7198677B2 (en) * | 2005-03-09 | 2007-04-03 | Wafermasters, Inc. | Low temperature wafer backside cleaning |
US20060225654A1 (en) * | 2005-03-29 | 2006-10-12 | Fink Steven T | Disposable plasma reactor materials and methods |
US7313310B2 (en) * | 2005-05-25 | 2007-12-25 | Honeywell International Inc. | Plasma directing baffle and method of use |
US7462845B2 (en) * | 2005-12-09 | 2008-12-09 | International Business Machines Corporation | Removable liners for charged particle beam systems |
US7943005B2 (en) * | 2006-10-30 | 2011-05-17 | Applied Materials, Inc. | Method and apparatus for photomask plasma etching |
US7909961B2 (en) * | 2006-10-30 | 2011-03-22 | Applied Materials, Inc. | Method and apparatus for photomask plasma etching |
US8034410B2 (en) | 2007-07-17 | 2011-10-11 | Asm International N.V. | Protective inserts to line holes in parts for semiconductor process equipment |
CN101355009B (en) * | 2007-07-23 | 2011-11-02 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Etching device |
US7807222B2 (en) * | 2007-09-17 | 2010-10-05 | Asm International N.V. | Semiconductor processing parts having apertures with deposited coatings and methods for forming the same |
TWI471961B (en) * | 2007-10-26 | 2015-02-01 | Sosul Co Ltd | Baffle, substrate supporting apparatus and plasma processing apparatus and plasma processing method |
US20090178763A1 (en) * | 2008-01-10 | 2009-07-16 | Applied Materials, Inc. | Showerhead insulator and etch chamber liner |
JP2009200184A (en) * | 2008-02-20 | 2009-09-03 | Tokyo Electron Ltd | Plasma processing apparatus, and baffle plate of plasma processing apparatus |
US7987814B2 (en) * | 2008-04-07 | 2011-08-02 | Applied Materials, Inc. | Lower liner with integrated flow equalizer and improved conductance |
JP5102706B2 (en) * | 2008-06-23 | 2012-12-19 | 東京エレクトロン株式会社 | Baffle plate and substrate processing apparatus |
JP5424744B2 (en) * | 2009-07-01 | 2014-02-26 | 株式会社フェローテック | Divided annular rib plasma processing equipment |
JP5302813B2 (en) * | 2009-07-28 | 2013-10-02 | 東京エレクトロン株式会社 | Deposit control cover and plasma processing apparatus |
US8617347B2 (en) * | 2009-08-06 | 2013-12-31 | Applied Materials, Inc. | Vacuum processing chambers incorporating a moveable flow equalizer |
JP5443096B2 (en) * | 2009-08-12 | 2014-03-19 | 株式会社ニューフレアテクノロジー | Semiconductor manufacturing apparatus and semiconductor manufacturing method |
US20110220285A1 (en) * | 2010-02-12 | 2011-09-15 | Morgan Advanced Ceramics, Inc. | Methods and systems for texturing ceramic components |
KR20120065841A (en) * | 2010-12-13 | 2012-06-21 | 삼성전자주식회사 | Substrate support unit, and apparatus for depositing thin layer using the same |
JP5808012B2 (en) * | 2011-12-27 | 2015-11-10 | 東京エレクトロン株式会社 | Plasma processing equipment |
US20140051253A1 (en) * | 2012-08-14 | 2014-02-20 | Lam Research Corporation | Plasma baffle ring for a plasma processing apparatus and method of use |
US10777387B2 (en) * | 2012-09-28 | 2020-09-15 | Semes Co., Ltd. | Apparatus for treating substrate |
US10316409B2 (en) * | 2012-12-21 | 2019-06-11 | Novellus Systems, Inc. | Radical source design for remote plasma atomic layer deposition |
JP6544902B2 (en) * | 2014-09-18 | 2019-07-17 | 東京エレクトロン株式会社 | Plasma processing system |
US20160362782A1 (en) * | 2015-06-15 | 2016-12-15 | Taiwan Semiconductor Manufacturing Co., Ltd. | Gas dispenser and deposition apparatus using the same |
JP6994502B2 (en) * | 2016-08-26 | 2022-01-14 | アプライド マテリアルズ インコーポレイテッド | Plasma screen for plasma processing chamber |
US10604841B2 (en) | 2016-12-14 | 2020-03-31 | Lam Research Corporation | Integrated showerhead with thermal control for delivering radical and precursor gas to a downstream chamber to enable remote plasma film deposition |
US10276340B1 (en) | 2017-12-20 | 2019-04-30 | Varian Semiconductor Equipment Associates, Inc. | Low particle capacitively coupled components for workpiece processing |
CN111383884B (en) * | 2018-12-27 | 2023-03-10 | 中微半导体设备(上海)股份有限公司 | Plasma confinement system and method |
US20210066051A1 (en) * | 2019-08-28 | 2021-03-04 | Applied Materials, Inc. | High conductance lower shield for process chamber |
CN113745083B (en) * | 2020-05-28 | 2023-09-29 | 中微半导体设备(上海)股份有限公司 | Plasma processing device |
JP2022107392A (en) * | 2021-01-08 | 2022-07-21 | 東京エレクトロン株式会社 | Exhaust ring assembly and plasma processing machine |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5919332A (en) * | 1995-06-07 | 1999-07-06 | Tokyo Electron Limited | Plasma processing apparatus |
US6176969B1 (en) * | 1998-04-22 | 2001-01-23 | Samsung Electronics Co., Ltd. | Baffle plate of dry etching apparatus for manufacturing semiconductor devices |
WO2002039495A1 (en) * | 2000-11-13 | 2002-05-16 | Tokyo Electron Limited | Plasma processing device and method of assembling the plasma processing device |
Family Cites Families (181)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4310390A (en) | 1977-08-10 | 1982-01-12 | Lockheed Corporation | Protective coating process for aluminum and aluminum alloys |
US4357387A (en) | 1981-08-20 | 1982-11-02 | Subtex, Inc. | Flame resistant insulating fabric compositions prepared by plasma spraying |
JPS5857491A (en) | 1981-09-30 | 1983-04-05 | Sony Corp | Preparation of green fluorescent material |
JPH065155B2 (en) | 1984-10-12 | 1994-01-19 | 住友金属工業株式会社 | Furnace wall repair device for kiln |
US4593007A (en) | 1984-12-06 | 1986-06-03 | The Perkin-Elmer Corporation | Aluminum and silica clad refractory oxide thermal spray powder |
US4612077A (en) | 1985-07-29 | 1986-09-16 | The Perkin-Elmer Corporation | Electrode for plasma etching system |
US5000113A (en) | 1986-12-19 | 1991-03-19 | Applied Materials, Inc. | Thermal CVD/PECVD reactor and use for thermal chemical vapor deposition of silicon dioxide and in-situ multi-step planarized process |
US4842683A (en) * | 1986-12-19 | 1989-06-27 | Applied Materials, Inc. | Magnetic field-enhanced plasma etch reactor |
US4877757A (en) | 1987-07-16 | 1989-10-31 | Texas Instruments Incorporated | Method of sequential cleaning and passivating a GaAs substrate using remote oxygen plasma |
NO163412B (en) | 1988-01-25 | 1990-02-12 | Elkem Technology | The plasma torch. |
DE69015715T2 (en) | 1989-07-11 | 1995-08-17 | Sony Corp | Method of heat treating an optical oxide crystal and heat treatment apparatus therefor. |
US5334462A (en) | 1989-09-08 | 1994-08-02 | United Technologies Corporation | Ceramic material and insulating coating made thereof |
US5556501A (en) | 1989-10-03 | 1996-09-17 | Applied Materials, Inc. | Silicon scavenger in an inductively coupled RF plasma reactor |
US5126102A (en) * | 1990-03-15 | 1992-06-30 | Kabushiki Kaisha Toshiba | Fabricating method of composite material |
DE4109979C2 (en) * | 1990-03-28 | 2000-03-30 | Nisshin Flour Milling Co | Process for the production of coated particles from inorganic or metallic materials |
US5180467A (en) * | 1990-08-08 | 1993-01-19 | Vlsi Technology, Inc. | Etching system having simplified diffuser element removal |
US5074456A (en) | 1990-09-18 | 1991-12-24 | Lam Research Corporation | Composite electrode for plasma processes |
DE4103994A1 (en) | 1991-02-11 | 1992-08-13 | Inst Elektroswarki Patona | PROTECTIVE COVER OF THE METAL-CERAMIC TYPE FOR ITEMS OF HEAT-RESISTANT ALLOYS |
EP0508731B1 (en) | 1991-04-09 | 1996-09-18 | The Tokyo Electric Power Co., Inc. | Use of an oxide coating to enhance the resistance to oxidation and corrosion of a silicon nitride based gas turbine blade |
JP3175189B2 (en) | 1991-05-13 | 2001-06-11 | ソニー株式会社 | Low pressure CVD equipment |
WO1993024275A1 (en) | 1992-06-01 | 1993-12-09 | Ice Blast International Ltd. | Particle blasting utilizing crystalline ice |
EP0573057A1 (en) | 1992-06-05 | 1993-12-08 | Applied Materials, Inc. | Integrated circuit structure processing apparatus with chemically corrosion-resistant Al2O3 protective coating on surface of quartz window exposed to corrosive chemicals |
KR100276093B1 (en) | 1992-10-19 | 2000-12-15 | 히가시 데쓰로 | Plasma etching system |
US5302465A (en) * | 1992-10-26 | 1994-04-12 | The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration | Plasma sprayed ceramic thermal barrier coating for NiAl-based intermetallic alloys |
DE69330719T2 (en) | 1992-12-28 | 2002-07-04 | Nippon Zeon Co | OBJECT WITH A HARD COATING AND METHOD FOR THE PRODUCTION THEREOF |
US5366585A (en) * | 1993-01-28 | 1994-11-22 | Applied Materials, Inc. | Method and apparatus for protection of conductive surfaces in a plasma processing reactor |
US5362335A (en) | 1993-03-25 | 1994-11-08 | General Motors Corporation | Rare earth coating process for aluminum alloys |
KR100324792B1 (en) * | 1993-03-31 | 2002-06-20 | 히가시 데쓰로 | Plasma processing apparatus |
US5891253A (en) | 1993-05-14 | 1999-04-06 | Applied Materials, Inc. | Corrosion resistant apparatus |
US5551190A (en) | 1993-05-19 | 1996-09-03 | Ohi Seisakusho Co., Ltd. | Slide door driving system |
US5614055A (en) | 1993-08-27 | 1997-03-25 | Applied Materials, Inc. | High density plasma CVD and etching reactor |
US5484752A (en) | 1993-11-12 | 1996-01-16 | Ube Industries, Ltd. | Ceramic composite material |
JP3308091B2 (en) | 1994-02-03 | 2002-07-29 | 東京エレクトロン株式会社 | Surface treatment method and plasma treatment device |
US5798016A (en) | 1994-03-08 | 1998-08-25 | International Business Machines Corporation | Apparatus for hot wall reactive ion etching using a dielectric or metallic liner with temperature control to achieve process stability |
US5680013A (en) | 1994-03-15 | 1997-10-21 | Applied Materials, Inc. | Ceramic protection for heated metal surfaces of plasma processing chamber exposed to chemically aggressive gaseous environment therein and method of protecting such heated metal surfaces |
US5900103A (en) * | 1994-04-20 | 1999-05-04 | Tokyo Electron Limited | Plasma treatment method and apparatus |
US5651723A (en) | 1994-04-13 | 1997-07-29 | Viratec Thin Films, Inc. | Method and apparatus for cleaning substrates in preparation for deposition of thin film coatings |
US5521790A (en) | 1994-05-12 | 1996-05-28 | International Business Machines Corporation | Electrostatic chuck having relatively thick and thin areas and means for uniformly cooling said thick and thin areas during chuck anodization |
KR100331053B1 (en) | 1994-05-17 | 2002-06-20 | 가나이 쓰도무 | Plasma processing appartus and plasma processing method |
US5641375A (en) | 1994-08-15 | 1997-06-24 | Applied Materials, Inc. | Plasma etching reactor with surface protection means against erosion of walls |
DE9421671U1 (en) | 1994-08-26 | 1996-07-11 | Siemens Ag | Discharge chamber for a plasma etching system in semiconductor production |
US5885356A (en) | 1994-11-30 | 1999-03-23 | Applied Materials, Inc. | Method of reducing residue accumulation in CVD chamber using ceramic lining |
US5716534A (en) * | 1994-12-05 | 1998-02-10 | Tokyo Electron Limited | Plasma processing method and plasma etching method |
US5891350A (en) * | 1994-12-15 | 1999-04-06 | Applied Materials, Inc. | Adjusting DC bias voltage in plasma chambers |
US5902763A (en) | 1995-01-19 | 1999-05-11 | Ube Industries, Inc. | Fused ceramic composite |
US5759360A (en) | 1995-03-13 | 1998-06-02 | Applied Materials, Inc. | Wafer clean sputtering process |
US6296740B1 (en) | 1995-04-24 | 2001-10-02 | Si Diamond Technology, Inc. | Pretreatment process for a surface texturing process |
US5534356A (en) | 1995-04-26 | 1996-07-09 | Olin Corporation | Anodized aluminum substrate having increased breakdown voltage |
JP3595608B2 (en) | 1995-05-30 | 2004-12-02 | アネルバ株式会社 | Vacuum processing apparatus, method for removing deposited film on inner surface of vacuum vessel in vacuum processing apparatus, and method for uniforming film deposition on inner surface of vacuum vessel in vacuum processing apparatus |
JP3208044B2 (en) * | 1995-06-07 | 2001-09-10 | 東京エレクトロン株式会社 | Plasma processing apparatus and plasma processing method |
JP3164200B2 (en) | 1995-06-15 | 2001-05-08 | 住友金属工業株式会社 | Microwave plasma processing equipment |
DE19529627C1 (en) | 1995-08-11 | 1997-01-16 | Siemens Ag | Thermally conductive, electrically insulating connection and method for its production |
EP0777258A3 (en) | 1995-11-29 | 1997-09-17 | Applied Materials Inc | Self-cleaning plasma processing reactor |
US5894887A (en) | 1995-11-30 | 1999-04-20 | Applied Materials, Inc. | Ceramic dome temperature control using heat pipe structure and method |
US6373573B1 (en) | 2000-03-13 | 2002-04-16 | Lj Laboratories L.L.C. | Apparatus for measuring optical characteristics of a substrate and pigments applied thereto |
US5985102A (en) | 1996-01-29 | 1999-11-16 | Micron Technology, Inc. | Kit for electrically isolating collimator of PVD chamber, chamber so modified, and method of using |
US5955182A (en) | 1996-02-05 | 1999-09-21 | Kabushiki Kaisha Toshiba | Heat resisting member and its production method |
JPH09235662A (en) | 1996-02-28 | 1997-09-09 | Nittetsu Hard Kk | Formation of thermally sprayed coating |
CN1074689C (en) | 1996-04-04 | 2001-11-14 | E·O·帕通电子焊接研究院电子束工艺国际中心 | Method of producing on substrate of protective coatings with chemical composition and structure gradient across thickness and with top ceramic layer |
US6108189A (en) | 1996-04-26 | 2000-08-22 | Applied Materials, Inc. | Electrostatic chuck having improved gas conduits |
US5968377A (en) | 1996-05-24 | 1999-10-19 | Sekisui Chemical Co., Ltd. | Treatment method in glow-discharge plasma and apparatus thereof |
US5892278A (en) | 1996-05-24 | 1999-04-06 | Dai Nippon Printingco., Ltd. | Aluminum and aluminum alloy radiator for semiconductor device and process for producing the same |
JP3050124B2 (en) | 1996-05-27 | 2000-06-12 | 住友金属工業株式会社 | Plasma processing equipment |
US5820723A (en) | 1996-06-05 | 1998-10-13 | Lam Research Corporation | Universal vacuum chamber including equipment modules such as a plasma generating source, vacuum pumping arrangement and/or cantilevered substrate support |
US5952060A (en) | 1996-06-14 | 1999-09-14 | Applied Materials, Inc. | Use of carbon-based films in extending the lifetime of substrate processing system components |
JP3241270B2 (en) | 1996-06-25 | 2001-12-25 | 日本政策投資銀行 | Thermoelectric converter |
US5885402A (en) | 1996-07-17 | 1999-03-23 | Applied Materials | Diagnostic head assembly for plasma chamber |
EP0821395A3 (en) * | 1996-07-19 | 1998-03-25 | Tokyo Electron Limited | Plasma processing apparatus |
US5904778A (en) * | 1996-07-26 | 1999-05-18 | Applied Materials, Inc. | Silicon carbide composite article particularly useful for plasma reactors |
US5882411A (en) * | 1996-10-21 | 1999-03-16 | Applied Materials, Inc. | Faceplate thermal choke in a CVD plasma reactor |
US6120640A (en) | 1996-12-19 | 2000-09-19 | Applied Materials, Inc. | Boron carbide parts and coatings in a plasma reactor |
US6301004B1 (en) | 2000-05-31 | 2001-10-09 | Lj Laboratories, L.L.C. | Apparatus and method for measuring optical characteristics of an object |
US5925228A (en) | 1997-01-09 | 1999-07-20 | Sandia Corporation | Electrophoretically active sol-gel processes to backfill, seal, and/or densify porous, flawed, and/or cracked coatings on electrically conductive material |
US5800621A (en) | 1997-02-10 | 1998-09-01 | Applied Materials, Inc. | Plasma source for HDP-CVD chamber |
JP2981184B2 (en) | 1997-02-21 | 1999-11-22 | トーカロ株式会社 | Boiler heat transfer tube and method for producing boiler heat transfer tube with excellent effect of suppressing deposit adhesion on inner surface of tube |
US5843239A (en) | 1997-03-03 | 1998-12-01 | Applied Materials, Inc. | Two-step process for cleaning a substrate processing chamber |
US5900064A (en) | 1997-05-01 | 1999-05-04 | Applied Materials, Inc. | Plasma process chamber |
US5851343A (en) | 1997-05-16 | 1998-12-22 | Taiwan Semiconductor Manufacturing Company, Ltd. | Protective shield around the inner edge of endpoint window in a plasma etching chamber |
US5994662A (en) | 1997-05-29 | 1999-11-30 | Applied Materials, Inc. | Unique baffle to deflect remote plasma clean gases |
US6143646A (en) | 1997-06-03 | 2000-11-07 | Motorola Inc. | Dual in-laid integrated circuit structure with selectively positioned low-K dielectric isolation and method of formation |
JP3707229B2 (en) | 1997-06-27 | 2005-10-19 | コニカミノルタビジネステクノロジーズ株式会社 | Electrophotographic photosensitive member and electrophotographic image forming apparatus using the same |
JP3362113B2 (en) | 1997-07-15 | 2003-01-07 | 日本碍子株式会社 | Corrosion-resistant member, wafer mounting member, and method of manufacturing corrosion-resistant member |
JPH1136076A (en) | 1997-07-16 | 1999-02-09 | Tokyo Electron Ltd | Cvd deposition apparatus and cvd deposition method |
JPH1154496A (en) * | 1997-08-07 | 1999-02-26 | Tokyo Electron Ltd | Heat treatment system and gas processing system |
KR19990008937U (en) | 1997-08-13 | 1999-03-05 | 이문세 | Soundproof wall assembly |
US6161500A (en) | 1997-09-30 | 2000-12-19 | Tokyo Electron Limited | Apparatus and method for preventing the premature mixture of reactant gases in CVD and PECVD reactions |
US6106625A (en) | 1997-12-02 | 2000-08-22 | Applied Materials, Inc. | Reactor useful for chemical vapor deposition of titanium nitride |
US6079356A (en) * | 1997-12-02 | 2000-06-27 | Applied Materials, Inc. | Reactor optimized for chemical vapor deposition of titanium |
KR100258984B1 (en) | 1997-12-24 | 2000-08-01 | 윤종용 | Dry etching apparatus |
JP4217299B2 (en) * | 1998-03-06 | 2009-01-28 | 東京エレクトロン株式会社 | Processing equipment |
US6129808A (en) * | 1998-03-31 | 2000-10-10 | Lam Research Corporation | Low contamination high density plasma etch chambers and methods for making the same |
JP4037956B2 (en) | 1998-04-28 | 2008-01-23 | 東海カーボン株式会社 | Chamber inner wall protection member |
JP3810039B2 (en) | 1998-05-06 | 2006-08-16 | キヤノン株式会社 | Stage equipment |
US6246479B1 (en) | 1998-06-08 | 2001-06-12 | Lj Laboratories, L.L.C. | Integrated spectrometer assembly and methods |
US6962649B2 (en) * | 1998-07-10 | 2005-11-08 | Semitool, Inc. | Contact assemblies, methods for making contact assemblies, and machines with contact assemblies for electrochemical processing of microelectronic workpieces |
US6335293B1 (en) | 1998-07-13 | 2002-01-01 | Mattson Technology, Inc. | Systems and methods for two-sided etch of a semiconductor substrate |
US6182603B1 (en) | 1998-07-13 | 2001-02-06 | Applied Komatsu Technology, Inc. | Surface-treated shower head for use in a substrate processing chamber |
US6123791A (en) | 1998-07-29 | 2000-09-26 | Applied Materials, Inc. | Ceramic composition for an apparatus and method for processing a substrate |
US6389506B1 (en) | 1998-08-07 | 2002-05-14 | Cisco Technology, Inc. | Block mask ternary cam |
JP4162773B2 (en) | 1998-08-31 | 2008-10-08 | 東京エレクトロン株式会社 | Plasma processing apparatus and detection window |
US6170429B1 (en) | 1998-09-30 | 2001-01-09 | Lam Research Corporation | Chamber liner for semiconductor process chambers |
JP3030287B1 (en) | 1998-10-09 | 2000-04-10 | 株式会社協同インターナショナル | Method for cleaning film forming apparatus, method for cleaning sputtering target, and cleaning apparatus used for these |
JP2000124197A (en) | 1998-10-16 | 2000-04-28 | Hitachi Ltd | Plasma treatment apparatus |
US6383964B1 (en) | 1998-11-27 | 2002-05-07 | Kyocera Corporation | Ceramic member resistant to halogen-plasma corrosion |
US6178919B1 (en) * | 1998-12-28 | 2001-01-30 | Lam Research Corporation | Perforated plasma confinement ring in plasma reactors |
US6123804A (en) | 1999-02-22 | 2000-09-26 | Applied Materials, Inc. | Sectional clamp ring |
US6221202B1 (en) * | 1999-04-01 | 2001-04-24 | International Business Machines Corporation | Efficient plasma containment structure |
TW465017B (en) | 1999-04-13 | 2001-11-21 | Applied Materials Inc | A corrosion-resistant protective coating for an apparatus and method for processing a substrate |
JP3911902B2 (en) * | 1999-04-16 | 2007-05-09 | 東京エレクトロン株式会社 | Processing apparatus and surface treatment method for metal parts |
US6444083B1 (en) * | 1999-06-30 | 2002-09-03 | Lam Research Corporation | Corrosion resistant component of semiconductor processing equipment and method of manufacturing thereof |
JP2001023959A (en) | 1999-07-05 | 2001-01-26 | Mitsubishi Electric Corp | Plasma processing apparatus |
JP2001031484A (en) | 1999-07-22 | 2001-02-06 | Nihon Ceratec Co Ltd | Corrosion-resistant composite member |
US6387817B1 (en) * | 1999-09-07 | 2002-05-14 | Agere Systems Guardian Corp. | Plasma confinement shield |
JP4285853B2 (en) * | 1999-09-08 | 2009-06-24 | 東京エレクトロン株式会社 | Processing method |
US6408786B1 (en) * | 1999-09-23 | 2002-06-25 | Lam Research Corporation | Semiconductor processing equipment having tiled ceramic liner |
US6618478B1 (en) * | 1999-09-27 | 2003-09-09 | Ameritech Corporation | Telephone set having a help key and methods and systems for use therewith |
US6296716B1 (en) | 1999-10-01 | 2001-10-02 | Saint-Gobain Ceramics And Plastics, Inc. | Process for cleaning ceramic articles |
US6364949B1 (en) | 1999-10-19 | 2002-04-02 | Applied Materials, Inc. | 300 mm CVD chamber design for metal-organic thin film deposition |
US6265757B1 (en) | 1999-11-09 | 2001-07-24 | Agere Systems Guardian Corp. | Forming attached features on a semiconductor substrate |
JP2001152307A (en) | 1999-11-29 | 2001-06-05 | Nippon Steel Hardfacing Co Ltd | Method of forming corrosion resisting combined coating standing long use, and member having the composite coating |
TW514996B (en) | 1999-12-10 | 2002-12-21 | Tokyo Electron Ltd | Processing apparatus with a chamber having therein a high-corrosion-resistant sprayed film |
JP3510993B2 (en) * | 1999-12-10 | 2004-03-29 | トーカロ株式会社 | Plasma processing container inner member and method for manufacturing the same |
US6362888B1 (en) | 1999-12-23 | 2002-03-26 | Lj Laboratories, L.L.C. | Spectrometer assembly |
US6519037B2 (en) | 1999-12-23 | 2003-02-11 | Lj Laboratories, Llc | Spectrometer having optical unit including a randomized fiber optic implement |
JP3567855B2 (en) | 2000-01-20 | 2004-09-22 | 住友電気工業株式会社 | Wafer holder for semiconductor manufacturing equipment |
JP4272786B2 (en) | 2000-01-21 | 2009-06-03 | トーカロ株式会社 | Electrostatic chuck member and manufacturing method thereof |
DE50100469D1 (en) * | 2000-03-15 | 2003-09-11 | Paul-Eric Preising | CLEANING METHOD AND DEVICE FOR HIGH-VOLTAGE SYSTEM PARTS |
TW503449B (en) * | 2000-04-18 | 2002-09-21 | Ngk Insulators Ltd | Halogen gas plasma-resistive members and method for producing the same, laminates, and corrosion-resistant members |
JP4422295B2 (en) * | 2000-05-17 | 2010-02-24 | キヤノンアネルバ株式会社 | CVD equipment |
JP3578398B2 (en) * | 2000-06-22 | 2004-10-20 | 古河スカイ株式会社 | Gas dispersion plate for film formation and method of manufacturing the same |
TWI290589B (en) * | 2000-10-02 | 2007-12-01 | Tokyo Electron Ltd | Vacuum processing device |
US6413578B1 (en) | 2000-10-12 | 2002-07-02 | General Electric Company | Method for repairing a thermal barrier coating and repaired coating formed thereby |
JP2002134481A (en) | 2000-10-25 | 2002-05-10 | Taiheiyo Cement Corp | Member for vacuum treating apparatus |
US20020090464A1 (en) * | 2000-11-28 | 2002-07-11 | Mingwei Jiang | Sputter chamber shield |
US20040081746A1 (en) * | 2000-12-12 | 2004-04-29 | Kosuke Imafuku | Method for regenerating container for plasma treatment, member inside container for plasma treatment, method for preparing member inside container for plasma treatment, and apparatus for plasma treatment |
US6630201B2 (en) * | 2001-04-05 | 2003-10-07 | Angstron Systems, Inc. | Adsorption process for atomic layer deposition |
US6790242B2 (en) * | 2000-12-29 | 2004-09-14 | Lam Research Corporation | Fullerene coated component of semiconductor processing equipment and method of manufacturing thereof |
US6537429B2 (en) * | 2000-12-29 | 2003-03-25 | Lam Research Corporation | Diamond coatings on reactor wall and method of manufacturing thereof |
US7128804B2 (en) * | 2000-12-29 | 2006-10-31 | Lam Research Corporation | Corrosion resistant component of semiconductor processing equipment and method of manufacture thereof |
US6533910B2 (en) * | 2000-12-29 | 2003-03-18 | Lam Research Corporation | Carbonitride coated component of semiconductor processing equipment and method of manufacturing thereof |
US6805952B2 (en) * | 2000-12-29 | 2004-10-19 | Lam Research Corporation | Low contamination plasma chamber components and methods for making the same |
US6620520B2 (en) * | 2000-12-29 | 2003-09-16 | Lam Research Corporation | Zirconia toughened ceramic components and coatings in semiconductor processing equipment and method of manufacture thereof |
US6613442B2 (en) | 2000-12-29 | 2003-09-02 | Lam Research Corporation | Boron nitride/yttria composite components of semiconductor processing equipment and method of manufacturing thereof |
DE60228198D1 (en) | 2001-02-07 | 2008-09-25 | Hitachi Metals Ltd | METHOD FOR PRODUCING A METAL ALLOY FOR AN IRON BASE RARE MAGNET |
US6830622B2 (en) * | 2001-03-30 | 2004-12-14 | Lam Research Corporation | Cerium oxide containing ceramic components and coatings in semiconductor processing equipment and methods of manufacture thereof |
WO2002080952A2 (en) * | 2001-04-09 | 2002-10-17 | Lorantis Limited | Therapeutic use and identification of modulators of a hedgehog signalling pathway or one of its target pathways |
TW541586B (en) | 2001-05-25 | 2003-07-11 | Tokyo Electron Ltd | Substrate table, production method therefor and plasma treating device |
US6811651B2 (en) * | 2001-06-22 | 2004-11-02 | Tokyo Electron Limited | Gas temperature control for a plasma process |
US6527911B1 (en) * | 2001-06-29 | 2003-03-04 | Lam Research Corporation | Configurable plasma volume etch chamber |
KR100431660B1 (en) * | 2001-07-24 | 2004-05-17 | 삼성전자주식회사 | Dry Etching Apparatus for Manufacturing Semiconductor Devices |
US20030029563A1 (en) * | 2001-08-10 | 2003-02-13 | Applied Materials, Inc. | Corrosion resistant coating for semiconductor processing chamber |
US6849306B2 (en) * | 2001-08-23 | 2005-02-01 | Konica Corporation | Plasma treatment method at atmospheric pressure |
EP1296384B1 (en) * | 2001-09-21 | 2008-09-03 | FUJIFILM Corporation | Organic light-emitting device |
KR100440500B1 (en) | 2001-12-07 | 2004-07-15 | 주식회사 코미코 | Ceramic parts production and repair for semiconductor fabrication by plasma spray process |
GB2383833A (en) | 2001-12-27 | 2003-07-09 | Perkins Engines Co Ltd | Piston with a ceramic reinforced ring groove |
US6514911B1 (en) * | 2002-01-16 | 2003-02-04 | Uniroyal Chemical Company, Inc. | Substituted oxadiazines useful as pesticides |
US6793733B2 (en) * | 2002-01-25 | 2004-09-21 | Applied Materials Inc. | Gas distribution showerhead |
US6776873B1 (en) * | 2002-02-14 | 2004-08-17 | Jennifer Y Sun | Yttrium oxide based surface coating for semiconductor IC processing vacuum chambers |
GB2386907B (en) * | 2002-03-27 | 2005-10-26 | Isle Coat Ltd | Process and device for forming ceramic coatings on metals and alloys, and coatings produced by this process |
US7311797B2 (en) * | 2002-06-27 | 2007-12-25 | Lam Research Corporation | Productivity enhancing thermal sprayed yttria-containing coating for plasma reactor |
US6852433B2 (en) * | 2002-07-19 | 2005-02-08 | Shin-Etsu Chemical Co., Ltd. | Rare-earth oxide thermal spray coated articles and powders for thermal spraying |
KR100460143B1 (en) * | 2002-08-02 | 2004-12-03 | 삼성전자주식회사 | Process chamber for using semiconductor fabricating equipment |
JP3776856B2 (en) * | 2002-09-13 | 2006-05-17 | 株式会社日立ハイテクノロジーズ | Plasma processing apparatus and plasma processing method |
US7147749B2 (en) * | 2002-09-30 | 2006-12-12 | Tokyo Electron Limited | Method and apparatus for an improved upper electrode plate with deposition shield in a plasma processing system |
US6798519B2 (en) | 2002-09-30 | 2004-09-28 | Tokyo Electron Limited | Method and apparatus for an improved optical window deposition shield in a plasma processing system |
US7204912B2 (en) * | 2002-09-30 | 2007-04-17 | Tokyo Electron Limited | Method and apparatus for an improved bellows shield in a plasma processing system |
US7137353B2 (en) * | 2002-09-30 | 2006-11-21 | Tokyo Electron Limited | Method and apparatus for an improved deposition shield in a plasma processing system |
US6837966B2 (en) * | 2002-09-30 | 2005-01-04 | Tokyo Electron Limeted | Method and apparatus for an improved baffle plate in a plasma processing system |
US7166166B2 (en) | 2002-09-30 | 2007-01-23 | Tokyo Electron Limited | Method and apparatus for an improved baffle plate in a plasma processing system |
US7166200B2 (en) * | 2002-09-30 | 2007-01-23 | Tokyo Electron Limited | Method and apparatus for an improved upper electrode plate in a plasma processing system |
US20040060779A1 (en) * | 2002-10-01 | 2004-04-01 | Charles Kreger | Distance compensating shim for clutch/brake and method of determining same |
US7780786B2 (en) | 2002-11-28 | 2010-08-24 | Tokyo Electron Limited | Internal member of a plasma processing vessel |
US6894769B2 (en) * | 2002-12-31 | 2005-05-17 | Tokyo Electron Limited | Monitoring erosion of system components by optical emission |
US6806949B2 (en) * | 2002-12-31 | 2004-10-19 | Tokyo Electron Limited | Monitoring material buildup on system components by optical emission |
JP2004241203A (en) * | 2003-02-04 | 2004-08-26 | Hitachi High-Technologies Corp | Treatment method of plasma treatment chamber wall |
CN100418187C (en) * | 2003-02-07 | 2008-09-10 | 东京毅力科创株式会社 | Plasma processing device, annular element and plasma processing method |
US7029536B2 (en) | 2003-03-17 | 2006-04-18 | Tokyo Electron Limited | Processing system and method for treating a substrate |
JP4597972B2 (en) | 2003-03-31 | 2010-12-15 | 東京エレクトロン株式会社 | A method of bonding adjacent coatings on a processing member. |
JP4532479B2 (en) | 2003-03-31 | 2010-08-25 | 東京エレクトロン株式会社 | A barrier layer for a processing member and a method of forming the same. |
EP1780298A4 (en) * | 2005-07-29 | 2009-01-07 | Tocalo Co Ltd | Y2o3 thermal sprayed film coated member and process for producing the same |
JP4238882B2 (en) | 2006-06-09 | 2009-03-18 | トヨタ自動車株式会社 | Ejector system for vehicles |
-
2002
- 2002-09-30 US US10/259,382 patent/US6837966B2/en not_active Expired - Lifetime
-
2003
- 2003-09-29 CN CNB03822206XA patent/CN100380564C/en not_active Expired - Lifetime
- 2003-09-29 AU AU2003274581A patent/AU2003274581A1/en not_active Abandoned
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- 2003-09-29 JP JP2004539388A patent/JP4627660B2/en not_active Expired - Fee Related
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2004
- 2004-12-14 US US11/010,373 patent/US7282112B2/en not_active Expired - Lifetime
-
2007
- 2007-05-07 US US11/745,185 patent/US8057600B2/en not_active Expired - Fee Related
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5919332A (en) * | 1995-06-07 | 1999-07-06 | Tokyo Electron Limited | Plasma processing apparatus |
US6176969B1 (en) * | 1998-04-22 | 2001-01-23 | Samsung Electronics Co., Ltd. | Baffle plate of dry etching apparatus for manufacturing semiconductor devices |
WO2002039495A1 (en) * | 2000-11-13 | 2002-05-16 | Tokyo Electron Limited | Plasma processing device and method of assembling the plasma processing device |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2008523613A (en) * | 2004-12-08 | 2008-07-03 | 東京エレクトロン株式会社 | Method and apparatus for improved baffle plate |
US8012305B2 (en) | 2006-08-11 | 2011-09-06 | Tokyo Electron Limited | Exhaust assembly for a plasma processing system |
Also Published As
Publication number | Publication date |
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US8057600B2 (en) | 2011-11-15 |
WO2004030013A3 (en) | 2004-09-16 |
CN100380564C (en) | 2008-04-09 |
US6837966B2 (en) | 2005-01-04 |
KR20050067405A (en) | 2005-07-01 |
CN1682341A (en) | 2005-10-12 |
WO2004030013A8 (en) | 2004-10-07 |
US7282112B2 (en) | 2007-10-16 |
KR100733167B1 (en) | 2007-06-27 |
AU2003274581A8 (en) | 2004-04-19 |
US20040060658A1 (en) | 2004-04-01 |
JP4627660B2 (en) | 2011-02-09 |
JP2006501647A (en) | 2006-01-12 |
AU2003274581A1 (en) | 2004-04-19 |
US20070204794A1 (en) | 2007-09-06 |
US20050103268A1 (en) | 2005-05-19 |
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