WO2004027846A1

WO2004027846A1 - Substrate processing apparatus and method of manufacturing semiconductor device

Info

Publication number: WO2004027846A1
Application number: PCT/JP2003/011904
Authority: WO
Inventors: Takatomo Yamaguchi; Tomoyuki Matsuda; Tatsuhisa Matsunaga; Kenji Shirako; Rui Nomura; Kouichi Noto
Original assignee: Hitachi Kokusai Electric Inc.
Priority date: 2002-09-20
Filing date: 2003-09-18
Publication date: 2004-04-01

Abstract

A substrate processing apparatus, wherein an inner tube (2) forming a process tube (1) in association with an outer tube (3) forms a processing chamber (4) for carrying a boat (11) holding a plurality of wafers (10) thereinto, an exhaust port (7) is provided in a manifold (6) sealing air-tight the lower end parts of the inner tube (2) and the outer tube (3), an gas inlet nozzle (22) for leading material gas (30) is installed in the inner tube (2), an exhaust slit (25) is opened in the inner tube (2) on the opposite side of the gas inlet nozzle (22), and an exhaust duct (26) covering the exhaust slit (25) is projectedly provided on the outer peripheral surface of the inner tube (2), whereby since it can be prevented by flowing the process gas exhausted from the exhaust slit to an exhaust duct that process gas generates foreign matter on the outer peripheral surface of the inner tube, it can be prevented that the generated and adhered foreign matter flows reversely into the processing chamber and becomes particles.

Description

FIELD OF THE INVENTION

The present invention relates to a substrate processing technique. For example, in a method of manufacturing a semiconductor integrated circuit device (hereinafter, referred to as an IC), a semiconductor wafer (hereinafter, referred to as a wafer) in which a semiconductor integrated circuit is manufactured is made of polysilicon or silicon. Fields that are useful for depositing silicon nitride films. Background art

2. Description of the Related Art In a method of manufacturing an IC, a batch-type vertical hot-wall type low-pressure CVD apparatus (hereinafter, referred to as a CVD apparatus) is widely used for depositing a CVD film such as polysilicon or silicon nitride film on a wafer. . A conventional CVD apparatus of this type includes, for example, an inner tube and an outer tube surrounding the inner tube as disclosed in Japanese Patent Application Laid-Open No. 2000-311862. A vertically installed process tube, a boat that holds multiple wafers and carries them into the inner tube, a gas introduction nozzle that introduces source gas into the inner tube, and exhausts the process tube. It has an exhaust port for reducing pressure, and a heater unit laid outside the process tube to heat the inside of the process tube. The gas inlet nozzle has a plurality of outlets opened corresponding to each wafer held in the port. Some of the inner tubes have vents on the side wall.

In this CVD apparatus, a plurality of enanos are loaded into the inner tube from the furnace port at the lower end (port opening padding) while being held long and aligned by a bottle, and the raw material gas is introduced into the inner tube. The CVD film is deposited on the wafer by being introduced by the introduction nozzle and heating the inside of the process tube by the heater unit. At this time, the raw material gas horizontally ejected from the plurality of ejection ports of the gas introduction nozzle flows between the upper and lower wafers that are horizontally held in the port, contacts the wafer surface, and is opened in the inner tube. From the exhaust vent The air is exhausted to the outside of the tube by the exhaust force of the exhaust port.

However, in the above-described CVD apparatus, when a part of the raw material gas exhausted from the exhaust hole flows between the inner tube and the outer tube and local stagnation occurs, foreign matter adheres to the outer peripheral surface of the inner tube and particles are generated. There is a problem that it easily occurs. For example, when forming a polysilicon film, if the residence time of monosilane (SiH ₄ ) in the high-temperature region becomes longer, the decomposition reaction in the gas phase proceeds excessively, so that silicon becomes powdery. It was confirmed that a brown by-product had adhered to the outer peripheral surface of the aluminum tube. The by-products which silylene intermediate product of the silane are polymerized bound _{[(S i H 4) n} ] are suspect to be. Then, when the foreign matter adhering to the outer peripheral surface of the inner tube peels off and flows back into the processing chamber, it becomes particles that contaminate the surface of the wafer.

An object of the present invention is to provide a substrate processing technique that can prevent foreign substances from adhering to an outer peripheral surface of a side wall of a processing chamber. Disclosure of the invention

A substrate processing apparatus according to the present invention includes an initiative having a processing chamber for processing a substrate, a boat holding the substrate and carrying the processing chamber, and a gas inlet for introducing a processing gas into the processing chamber. An outer tube located outside the inner tube; and a side wall of the inner tube having at least a vertical length longer than a horizontal length with respect to a main surface of the substrate held by the boat, and A length of which is formed over the plurality of substrates, and an exhaust slit that exhausts the processing chamber.

In the above means, the gas is introduced into the processing chamber through the gas inlet. Since the gas introduced into the processing chamber is exhausted from the exhaust slit formed in the side wall of the processing chamber, the gas flowing in the processing chamber flows in parallel to each substrate. By flowing in parallel to each substrate, the gas comes into uniform contact with the entire surface of each substrate, so that the processing state in each substrate becomes uniform. Since the processing gas exhausted from the exhaust slit does not flow along the outer peripheral surface of the side wall of the processing chamber by flowing through the exhaust duct, it is necessary to prevent the processing gas from contacting the outer peripheral surface of the side wall of the processing chamber. But Yes ₍ Brief description of drawings.

FIG. 1 is a front sectional view showing a CVD apparatus according to an embodiment of the present invention. 2 (a) is a plan sectional view taken along line aa of FIG. 1, and FIG. 2 (b) is a plan sectional view taken along line bb of FIG.

FIG. 3 is a side sectional view taken along the line cc of FIG.

FIG. 4 is a graph showing the relationship between D / S and gas flow uniformity.

FIG. 5 is a schematic diagram showing a control system of the CVD device.

FIG. 6 is a front sectional view showing a CVD apparatus according to a second embodiment of the present invention. FIG. 7 (a) is a plan sectional view taken along line a--a of FIG. 6, and FIG. FIG. 7 is a cross-sectional plan view taken along line bb in FIG.

FIG. 8 is a front sectional view showing a CVD apparatus according to a third embodiment of the present invention. FIG. 9 (a) is a plan sectional view taken along line a--a of FIG. 8, and FIG. FIG. 9 is a plan sectional view taken along the line b_b in FIG.

FIG. 10 is a side sectional view taken along line c-c in FIG.

FIG. 11 is a front sectional view showing a CVD apparatus according to a fourth embodiment of the present invention.

FIG. 12 is a side sectional view taken along the line XU—XII in FIG.

FIG. 13 is a front sectional view showing a CVD apparatus according to a fifth embodiment of the present invention.

FIG. 14 is a side sectional view taken along line XIV-XIV in FIG.

FIG. 15 is a plan sectional view showing a CVD apparatus according to a sixth embodiment of the present invention.

FIG. 16 is a plan sectional view showing a CVD apparatus according to a seventh embodiment of the present invention. BEST MODE FOR CARRYING OUT THE INVENTION Hereinafter, an embodiment of the present invention will be described with reference to the drawings.

In the present embodiment, as shown in FIG. 1, the substrate processing apparatus according to the present invention is configured as a CVD apparatus (batch type vertical hot wall type decompression CVD apparatus).

The CVD apparatus shown in FIG. 1 is provided with a vertical process tube 1 which is arranged vertically so that the center line is vertical and fixedly supported, and the process tube 1 is an inner tube 2 and a fan tube. Tube 3. Each of the inner tube 2 and the outer tube 3 is made of a material having high heat resistance such as quartz glass or silicon carbide (SiC), and is integrally formed into a cylindrical shape. The inner tube 1 is formed in a cylindrical shape having a closed upper end and an open lower end. The hollow portion of the cylindrical portion of the inner tube 1 is provided with a plurality of gaps which are held long by a boat. A processing chamber 4 into which the transfer chambers 8 are carried is formed. The inner diameter of the inner tube 2 is set to be larger than the maximum outer diameter of the wafer 10 to be handled. The fan tube 3 is similar to the inner tube 2, is formed in a cylindrical shape having a closed upper end and an opened lower end, and is concentrically covered so as to surround the outer side of the inner tube 2. A gap 5 is formed between the inner tube 2 and the outer tube 3 in a circular ring shape having a constant width.

The lower end between the inner tube 2 and the outer tube 3 is hermetically sealed by a manifold 6 formed in a circular ring shape, and the manifold 6 is connected to the inner tube 2 and the outer tube 3. It is detachably attached to the inner tube 2 and the outer tube 3 for maintenance inspection work and cleaning work. Since the manifold 6 is supported by the housing of the CVD device, the process tube 1 is in a vertically installed state. An exhaust port 7 is provided in a part of the side wall of the manifold 6, and the exhaust port 7 is connected to an exhaust device so that the inside of the processing chamber 4 can be depressurized to a predetermined degree of vacuum. . As shown in FIG. 2 (b), an exhaust duct section 8 is connected to the exhaust port 7, and the exhaust duct section 8 is formed in an exhaust duct 6 formed in the air tube 3 and described later. It is configured to be connected.

The manifold 6 has a seal cap 9 that closes the lower end opening from below in the vertical direction. It is coming into contact. The seal cap 9 is formed in a disk shape substantially equal to the outer diameter of the outer tube 3, and is configured to be vertically moved up and down by a port elevator installed vertically outside the process tube 1. . A boat 11 for holding a wafer 10 as an object to be processed is vertically supported on the center line of the seal cap 9. The boat 11 is provided with a pair of upper and lower end plates 1 1 ヽ 1 3 and a plurality of holding members 14 which are installed vertically between the end plates 1 2 and 1 3. A large number of holding grooves (holding portions) 15 are arranged in the holding member 14 at equal intervals in the longitudinal direction, and are submerged so as to face each other and open. By inserting the circumference of the wafer 10 between the holding grooves 15 of the same step of the plurality of holding members 14, the plurality of wafers 10 are aligned in a horizontal and centered state. Is held. A pair of upper and lower auxiliary end plates 16 and 17 are disposed between the boat 11 and the seal cap 9 and supported by a plurality of auxiliary holding members 18. Has a number of holding grooves 19 submerged. A desired number of heat insulating plates 50 are laid in the holding grooves 19 to prevent heat from escaping below the processing chamber 4.

Outside the outer tube 3, a heater unit 10 for heating the inside of the process tube 1 uniformly or at a predetermined temperature distribution is provided concentrically around the outer tube 3, and the heater unit 20 is a CVD unit. It is installed vertically by being supported by the housing of the device.

As shown in FIG. 1 and FIG. 2, a channel-shaped spare chamber 2 is located at a position 180 ° opposite to the exhaust port 7 on the side wall of the inner tube 2 which is the side wall of the processing chamber 4. 1 is formed so as to bulge outward in the radial direction and extend in the vertical direction, and a gas introduction nozzle 22 is piped inside the preliminary chamber 21 so as to extend in the vertical direction. ing. The inlet 3 of the gas introduction nozzle 2 2 penetrates the side wall of the manifold 6 radially outward and protrudes out of the process tube 1. Devices and the like are connected. The gas inlet nozzle 22 has a plurality of outlets 14 serving as gas inlets arranged in a vertical direction, and the number of the outlets 24 is equal to the number of wafers 10 held in the port 11. The height position of each spout 24 is vertically aligned with the upper and lower sides held by port 11. C are set to face the space between 10 and 10 respectively.

As shown in FIGS. 1 and 3, the exhaust slit 15 is vertically located at a position 180 degrees opposite to the preparatory chamber 21 on the side wall of the inner tube 1, that is, at a position on the exhaust port 7 side. The exhaust slit 25 is set to be longer than the entire length of the wafer group 10 held by the boat 11. An exhaust duct 26 covering the exhaust slit 25 projects from the outer periphery of the side wall of the inner tube 2. The exhaust duct 26 is formed in a trough shape having a substantially rectangular cross section, and the radial dimension of the exhaust duct 26 is set to be equal to or less than the radial dimension of the gap 5 between the inner tube 2 and the outer tube 3. I have. The ratio of the circumferential width D of the exhaust duct 16 to the circumferential width S of the exhaust slit 25 shown in FIG. 2 (a) is "70", that is, "D / S = 70". Is set. The lower end surface of the exhaust duct 16 is in contact with the upper surface of the exhaust duct portion 8 of the manifold 6, and the inside of the exhaust duct 16 is exhausted by the exhaust port 7 through the exhaust duct portion 8. . Further, as shown in FIG. 2 (b), a nitrogen gas supply pipe 27 for supplying nitrogen gas to the gap 5 is connected to the side wall of the manifold 6.

As shown in FIG. 5, the CVD apparatus includes a control system 40 composed of a main controller 41 and a plurality of sub-controllers 42 to 45. The main controller 41 has a display / input unit 41a, a CPU (central processing unit) 41b, a memory 41c, and a recording unit 41d. The recording unit 41d is a recording unit. It can exchange data with body 4 1 e. The sub-controllers 42 to 45 have the same configuration as the main controller 41. A temperature-related unit such as a heater unit 20 is connected to the temperature control sub-controller 42, and an exhaust device 46 connected to the exhaust port 7 and a pressure gauge 47 are connected to the pressure control sub-controller 43. A unit related to gas supply is connected to the gas control sub-controller 44, and a unit related to gas supply such as a gas supply device 48 is connected to the gas control sub-controller 44. A machine of 49 mag was connected overnight. The main controller 41 instructs these sub-controllers 42 to 45 to perform temperature control, pressure control, flow rate control, and machine control based on the recipe showing the control sequence of the film forming process on the time axis. Composed I have.

Next, the operation and effect of the CVD apparatus according to the above configuration will be described with reference to a film forming process in an IC manufacturing method according to an embodiment of the present invention.

In the wafer charging step, the wafers 10 are inserted into the boat 11 so as to be engaged with the holding grooves 15 of the holding member 14 at a plurality of locations where the circumferential edges of the wafers 10 face each other. The peripheral edge of the location is engaged with each holding groove 15 and is loaded (charged) and held so as to support its own weight. The plurality of wafers 10 are aligned parallel to each other and horizontally in the charging state of the boat 11 with their centers aligned.

In the port loading step, the boat 11 holding a plurality of wafers 10 aligned and held by the boat elevator 49 is loaded into the processing chamber 4 of the in-tube 2 (port loading). And is placed in the processing chamber 4 as shown in FIGS. 1 and 3. In this state, the seal cap 9 seals the processing chamber 4.

Subsequently, in the depressurizing step, the inside of the process tube 1 is depressurized to a predetermined degree of vacuum (for example, 20 OP a) by an exhaust force acting on the exhaust port 7, and in the heating step, Is heated to a predetermined temperature (for example, 400 ° C.) by the heater unit 20.

Next, in a film forming step, when a predetermined source gas 30 is supplied to the inlet 23 of the gas introduction nozzle 22 at normal pressure (atmospheric pressure), the source gas 30 is supplied through the gas introduction nozzle 22. It is circulated and introduced into the processing chamber 4 of the inner tube 2 from the plurality of ejection ports 24. For example, when doped polysilicon is diffused, monosilane (SiH ₄ ) and phosphine (FH ₃ ) are introduced into the processing chamber 4 as the source gas 30. Further, as shown in FIG. 2 (b), nitrogen gas 31 is supplied to the gap 5 by a nitrogen gas supply pipe 27.

The raw material gas 30 introduced into the processing chamber 4 flows out from the exhaust slit 25 vertically elongated on the side wall of the inner tube 2 to the exhaust duct 16 and is manifolded through the exhaust duct section 8. It is exhausted from the exhaust port 7 opened in 6. At this time, the gas inlet nozzle 2 and the exhaust slit 25 face 180 ° apart from each other. _{g Due to the} arrangement of each, the source gas 30 ejected from each ejection port 24 of the gas introduction nozzle 22 flows horizontally through the processing chamber 4 toward the exhaust slit 25 on the opposite side. , Flows parallel to each wafer 10. In addition, since each of the plurality of ejection ports 24 is disposed so as to face each other between the vertically adjacent wafers 10 and 10, the raw material ejected from each ejection port 24 is respectively provided. The gas 30 flows into each of the spaces between the vertically adjacent wafers 10 and 10 and reliably flows in parallel. A CVD film is formed on the surface of the wafer 1.0 by the CVD reaction of the raw material gas 30 flowing in parallel in the space between the vertically adjacent wafers 10 while being in contact with the surface of the wafer 10. accumulate. For example, when monosilane and phosphine are introduced, a doped polysilicon film is deposited on the wafer 10. At this time, since the source gas 30 is uniformly contacted over the entire surface of each wafer 10, the deposition state of the CVD film is uniform in both the film thickness and the film quality throughout each wafer 10.

In the present embodiment, the exhaust hole is constituted by an elongated exhaust slit 25, and the ratio of the circumferential width D of the exhaust duct 26 to the circumferential width S of the exhaust slit 25 is “70”. That is, "D / S = 70 J is set, so that a constant flow rate can be generated over the entire length of the exhaust slit 5, so that each of the wafers 10 held by the port 1 i The thickness and quality of the film formed on the wafer 10 are uniform over the entire length of the port 11 in the group of wafers 10. 'Here, the circumferential width D of the exhaust duct 26 and the circumference of the exhaust slit 25 are determined. The ratio of the width to the direction S (hereinafter, referred to as D / S) is shown as ノ, and the flow rate of gas above and below the exhaust slit 25 is simulated as a lame, and the graph shown in Fig. 4 is obtained. In Fig. 4, D / S is plotted on the horizontal axis. The vertical axis shows the uniformity of the flow represented by the ratio of the gas flow rate A at the upper part of the exhaust slit 25 to the gas flow rate B at the lower part (hereinafter referred to as A / B). The processing conditions in the simulation are as follows: The radial dimension of the exhaust duct 16 is 15 mm, and the length of the exhaust slit 25 is a boat 11. The pressure in the processing chamber is 300 OPa, the flow rate of the gas introduction nozzle 22 is 400 cc, Z minute (cubic centimeters per minute), 800 cc. / Min, 1 2 PT / JP2003 / 011904

9

0 0 c c / min.

According to FIG. 4, the gas flows uniformly in the exhaust slit 25 at any flow rate of 400 cc / min, 800 cc / min, and 1200 cc / min. When A / B becomes "1"! It is understood that) / S is “70”. Therefore, when “D / S. = 70” is set, the source gas 30 flows through the exhaust slit 25 at a constant flow rate over the entire length above and below it.

It should be noted that the D / S is not limited to D / S−70. For example, if A / B = 1 ± 5%, D / S = 60 or more may be set. Further, the circumferential width S of the exhaust hole constituted by the exhaust slot, the soto and the plurality of holes is not limited to being set to be the same over the entire length, and may be reduced. The width D in the circumferential direction and the depth in the radial direction of the exhaust duct are not limited to the same value over the entire length, but may be increased or decreased.

In the present embodiment, since the exhaust slit 25 is covered with the exhaust duct 16, the raw material gas 30 exhausted from the exhaust slit 25 is supplied between the inner tube 2 and the gas tube 3. No silane by-product adheres to the outer peripheral surface of the inner tube because it does not flow out into the gap 5 of the inner tube. Therefore, the phenomenon that by-products adhering to the outer peripheral surface of the inner tube 1 peel off and flow back to the processing chamber 4 does not occur, and the risk of contamination of the surface of the wafer 10 due to the scattering of the particles does not occur. Can be eliminated. Further, leakage of the source gas 30 from the exhaust duct 26 is reliably prevented by the nitrogen gas 31 supplied from the nitrogen gas supply pipe 27 to the gap 5.

After the desired CVD film (for example, a doped polysilicon film) is deposited as described above, the supply of the source gas 30 is stopped in the port opening opening step, and the process is performed by the inert gas. After the inside of the tube 1 is returned to the atmospheric pressure, the processing chamber 4 is opened by lowering the seal cap 9 and the processed wafer group 10 is processed while being held by the boat 11. It is carried out of the process tube 1 from the chamber 4 (port unloading).

Next, a CVD apparatus according to a second embodiment of the present invention shown in FIGS. 6 and 7 will be described.

In the CVD apparatus according to the second embodiment, the exhaust duct unit 8 and the exhaust duct The exhaust port 7 for reducing the pressure inside the processing chamber 4 to a predetermined degree of vacuum is connected to a part of the side wall of the manifold 6. Further, a nitrogen gas supply nozzle 28 as an inert gas supply means is provided at the position of the preliminary chamber 21 in the gap 5 between the inner tube 1 and the outer tube 3 so as to extend in a vertical direction, The inlet 28 a of the nitrogen gas supply nozzle 28 projects radially outward through the side wall of the manifold 6 and protrudes to the outside, and a nitrogen gas supply device is connected to the inlet 28 a Have been. The nitrogen gas supply nozzle 28 is provided with a plurality of pairs of jet ports 29, 29 for jetting nitrogen gas in opposite directions 180 degrees in the circumferential direction, which are arranged at equal intervals in the vertical direction. .

In the film forming step in the film forming step of the IC manufacturing method using the CVD apparatus having this configuration, a predetermined source gas 30 is supplied to the inlet 23 of the gas introduction nozzle 22 at normal pressure (atmospheric pressure). Then, the nitrogen gas 31 is supplied to the gap 5 between the inner tube 2 and the outer tube 3 in the circumferential direction from the group of ejection ports 29 of the nitrogen gas supply nozzles 28. The nitrogen gas 31 supplied to the gap 5 is diffused throughout the gap 5 by the exhaust force of the exhaust port 7. The raw material gas 30 introduced into the processing chamber 4 flows out of the exhaust slit 25 vertically elongated on the side wall of the inner tube 2 into the gap 5 between the inner tube 2 and the fan tube 3. The gas is exhausted from the exhaust port 7 connected to the manifold 6. In the present embodiment, since the nitrogen gas 31 is jetted into the gap 5 from the jet port 29 of the nitrogen gas supply nozzle 28 in the circumferential direction to fill the gap 5, the exhaust slit 15 The raw material gas 30 flowing out of the gap 5 is prevented from diffusing into the gap 5 as a whole, so that by-products of silane do not adhere to the outer peripheral surface of the inner tube 2. Accordingly, there is no occurrence of a phenomenon in which by-products adhered to the outer peripheral surface of the inner tube 2 are separated and flow back to the processing chamber 4, and the risk of contamination of the surface of the wafer 10 due to scattering of the particles is eliminated. can do.

The nitrogen gas is not limited to be supplied by the nitrogen gas supply nozzle vertically provided in the gap between the inner tube and the gas tube, but is connected to the lower end of the gap. It may be configured to supply by a nitrogen gas supply pipe. The inert gas is not limited to nitrogen gas, but may be an inert gas other than nitrogen gas, such as argon gas or helium gas. „~ _TO

PCT / JP2003 / 011904

11 Next, a description will be given of a CVD apparatus according to a third embodiment of the present invention shown in FIGS. 8, 9, and 10. FIG.

This embodiment is different from the first embodiment in that the exhaust duct section 8 is omitted and one end of the exhaust port 7 is connected to a part of the side wall of the manifold 6. The exhaust holes 26 a are arranged along the exhaust slits 25 on the rear wall of the exhaust duct 26, and the cleaning liquid after cleaning the inner tube 2 is supplied from inside the exhaust duct 26. The point is that a drain hole 26 b for draining is provided in the lower end wall of the exhaust duct 16. The opening area of each exhaust hole 26a is set such that the exhaust pressure of each exhaust hole 26a is substantially equal to each other.

In the film forming step in the film forming step of the IC manufacturing method using the CVD apparatus according to the present embodiment, the source gas 30 introduced into the processing chamber 4 from each of the jet ports 24 of the gas introduction nozzle 22 is exhausted. The air flows out of the slits 25 into the exhaust duct 26, flows out of the exhaust holes 26a in the rear wall of the exhaust duct 16 into the gaps 5, and into the gaps 5, respectively. It is exhausted from. At this time, since the opening area of each exhaust hole 26a is set so that the exhaust pressure of each exhaust hole 26a is substantially equal to each other, the raw material gas 30 flows in the vertical direction of the processing chamber 4. It will flow evenly over the entire length. Therefore, the source gas 30 is uniformly contacted between the wafers 10 over the entire length of the boat 11, so that the deposited state of the CVD film is uniform between the wafers 10 in both film thickness and film quality. become.

When the length of the exhaust slit 25 is set within the holding range of the wafer 10 including the dummy wafer of the port 11, the gas in the space between the upper end of the port 11 and the inner tube 2 is set. In order to prevent the generation of flow and the flow of gas from the periphery of the auxiliary holding members 16 and 17 at the lower end of the boat 11 and the uneven gas flow above and below the port 11 1 The size of the exhaust slit 25 in the vertical direction may extend above and below the holding range of the wafer 10. By-products are deposited on the inner surface of the inner tube 2. To accumulate each time, the inner tube 2 is periodically or irregularly cleaned by a jet treatment. If the cleaning liquid is left inside the exhaust duct 26 of the inner tube 2 during the jet cleaning, the inner tube 2 may be contaminated. However, in this embodiment, the exhaust Since the cleaning liquid can be discharged through the drain hole 26 b formed at the lower end of the duct 26, it is possible to prevent the cleaning liquid from being left inside the exhaust duct 26.

Next, a fourth embodiment C of the present invention shown in FIG. 11 and FIG.

The VD device will be described.

This embodiment is different from the above-described first embodiment in that, in addition to the third embodiment, a plurality of partition walls 26 c are disposed between adjacent exhaust holes 26 a. 26a and 26a, which protrude so as to partition between the spaces.

According to the present embodiment, since the space facing each exhaust hole 26a is partitioned and partitioned by each partition 26c, the exhaust port 7 is arranged below the exhaust duct 26. However, since the exhaust pressures of the exhaust ports 7 respectively applied to the vertically arranged exhaust holes 26 a are substantially equal to each other, the raw material gas 30 is located above and below the exhaust slit 25. In the direction, the state is drawn out uniformly from the processing chamber 4 over the entire length. In addition, the partition wall 26c prevents the source gas 30 from stagnating in the divided sections. Accordingly, the raw material gas 30 flows uniformly over the entire length of the processing chamber 4 in the vertical direction, and the wafers 10 contact each other evenly over the entire length of the boat 11, so that the CVD film is formed. Is uniform in both film thickness and film quality among the wafers 10.

When the partition wall 26c is inclined so that the exhaust slit 15 side is lowered, the cleaning liquid after the jet cleaning can be reliably drained. Further, the partition wall 26c may be provided with a drain hole 16b, and may be inclined so that the cleaning liquid collects in the 7K drain hole 26b.

Next, a CVD apparatus according to a fifth embodiment of the present invention shown in FIGS. 13 and 14 will be described.

This embodiment is different from the first embodiment in that the exhaust duct 8 is omitted and one end of the exhaust port 7 is connected to a part of the side wall of the manifold 6. Several exhaust holes 26 a are arranged on the side wall of the exhaust duct 26, and drain holes for draining the cleaning liquid after cleaning the inner tube 2 from inside the exhaust duct 26. 26 b is opened at the lower end wall of exhaust duct 26, multiple bulkheads 26c is protruded so as to partition the space between adjacent exhaust holes 26a, 26a between the exhaust holes 26a.

According to the present embodiment, since each exhaust hole 26 a is opened on the side wall of the exhaust duct 26, the raw material gas 30 blown out from the exhaust slit 25 flows through each exhaust hole 26 a. Since it is possible to prevent blow-through, the source gas 30 flows evenly over the entire length of the processing chamber 4 in the vertical direction. Therefore, since the source gas 30 is in uniform contact with each of the wafers 10 over the entire length of the port 11, the deposition state of the CVD film is mutually constant between the wafers 10 and the film quality. Both become even.

In such a form, particularly when the distance between the exhaust duct 26 and the exhaust slit 25 is short, it is difficult to flow evenly because the distance between the exhaust hole 26 a and the exhaust slit 25 is short. Can correct what can happen.

Note that the exhaust duct is not limited to being laid symmetrically with respect to the exhaust slit, but may be shifted left and right. In particular, by displacing the exhaust duct from the exhaust slit so that the exhaust hole formed in the side wall is as far away from the exhaust slit as possible, disturbance of the flow of the source gas can be prevented.

Next, a CVD apparatus according to a sixth embodiment of the present invention shown in FIG. 15 will be described.

This embodiment is different from the above-described first embodiment in that a pair of exhaust slits 25.25 are formed at the center of the gas introduction nozzle 22 or the gas injection port 24 as a gas introduction port. These are referred to as gas supply units.) And are arranged in line symmetry in the radial direction of the wafer 10 with respect to a line connecting the center of the main surface of the wafer 10. According to the present embodiment, the pair of exhaust slits 25 and 25 are arranged in line symmetry with respect to the ejection port 1, so that the gas is injected from each of the ejection ports 24 of the gas introduction nozzle 22. The raw material gas 30 divides the processing chamber 4 evenly toward the pair of exhaust slits 25, 25 on the opposite side and flows horizontally, so that the raw material gas 30 uniformly contacts the entire surface of the wafer 10. State. Therefore, the deposited state of the CVD film formed on the surface of the wafer 10 by the CVD reaction of the J source gas 30 becomes more uniform in both the film thickness and the film quality over the entire surface of the wafer 10. You. In addition, the exhaust holes 26a are positioned at approximately the same distance as the exhaust slits 25, 25 with respect to the exhaust slits 25, 25, thereby preventing direct gas blow-through in the P direction. be able to. In this description, a pair of exhaust slits 25, 25 is used, but any number of pairs may be used as long as they are line-symmetric.

Next, a CVD apparatus according to a seventh embodiment of the present invention shown in FIG. 16 will be described.

This embodiment is different from the first embodiment in that a pair of gas introduction nozzles 22 and 22 are located at the center of the preliminary chamber 21 or between the gas introduction nozzles 22.2. g A line connecting the center of the giant separation or the center of the giant separation between the gas outlets 24 and 24 (these are referred to as gas supply units) and the center of the main surface of the wafer 10 A pair of exhaust slits 25, 25 are laid in a line symmetrical manner with respect to the line, and the pair of exhaust slits 25, 25 are connected to the line connecting the center of the gas introduction nozzle 22 and the center of the main surface of the wafer 10. 10 in that they are arranged symmetrically in the radial direction, and a pair of exhaust ducts 26, 26 are laid so as to cover both exhaust slits 25, 25, respectively.

According to the present embodiment, the raw material gas 30 ejected from each of the ejection ports 24 of the pair of gas introduction nozzles 21 and 12 respectively passes the processing chamber 4 through the pair of exhaust slits 25 and 25 on the opposite side. To a uniform flow over the entire surface of the wafer 10 in order to diverge evenly toward each other and flow horizontally, and to be evenly sucked into the pair of exhaust ducts 26.26. Become. Therefore, the deposited state of the CVD film formed on the surface of the wafer 10 by the CVD reaction of the source gas 30 is more uniform over the entire surface of the wafer 10 in both film thickness and film quality. become. In addition, the exhaust holes 26a are positioned at approximately the same distance from the exhaust slits 25, 25 with respect to the exhaust slits 25, 25 to prevent direct gas blow-through. Can be. In the present description, a pair of exhaust slits 25, 25, an exhaust duct 26, and an exhaust hole 26a are described.

Note that the present invention is not limited to the above-described embodiment, and it goes without saying that various changes can be made without departing from the scope of the invention.

For example, the size of the plurality of exhaust holes formed in the exhaust duct is not limited to the same size, and the size of the exhaust hole at a position close to the size of the exhaust hole at a position different from the exhaust port is not limited. The gap may be configured to be large. That is, it is desirable to set the flow rate of the exhaust duct to be as constant as possible in the vertical direction. For example, it is preferable to set the size and position of each hole so that VXA = Q (V: velocity, A area, Q = flow rate) is constant for each hole.

The partition for dividing the inside of the exhaust duct into a plurality of sections is not limited to being arranged between adjacent exhaust holes, but may be arranged one by one for a plurality of exhaust holes. In other words, a plurality of exhaust holes may be arranged in a section inside the exhaust duct.

Preferably, the wall directly facing the wafer is of a fixed size. With a fixed size, the flow of the raw material gas is constant in the upper and lower parts.Therefore, when a vertically long exhaust slit is opened, it is divided by a partition inside the exhaust duct compared to when a horizontally long exhaust slit is opened. Since the stagnation disappears as much as there is no block, the effect can be further improved.

The number of spouts opened in the gas introduction nozzle is not limited to be equal to the number of wafers to be processed, but can be increased or decreased according to the number of wafers to be processed. For example, the spouts are not limited to being arranged between the vertically adjacent wafers, but may be arranged every two or three wafers. The number of gas introduction nozzles is not limited to one, and two or more gas introduction nozzles may be provided.

The gas introduction nozzle is not limited to being laid in the spare chamber bulging out of the inn tube, but may be laid along the inner periphery of the side wall of the processing chamber. The gas inlet is not limited to the gas inlet nozzle, but may be opened in a manifold or processing room.

In the above embodiment, the case where the processing is performed on the wafer has been described, but the processing target may be a photomask, a printed wiring board, a liquid crystal panel, a compact disk, a magnetic disk, or the like.

In the above embodiment, the deposition of a doped polysilicon film has been described. However, the present invention can be applied to a general method of forming a CVD film such as a doped polysilicon oxide film or a silicon nitride film.

Further, the method for manufacturing a semiconductor device according to the present invention can be applied to all thermal treatment steps in a method for manufacturing a semiconductor device, such as an oxide film forming step and a diffusion step. . In the above-described embodiment, the case where the present invention is applied to a batch type vertical hot wall type low pressure CVD apparatus has been described. However, the present invention is not limited to this. It can be applied to all substrate processing apparatuses such as a heat treatment apparatus (furnace).

Claims

Scope of Claim Inner tube forming a processing chamber for processing a substrate, a boat holding the substrate and carrying the processing chamber into the processing chamber, a gas inlet for introducing a processing gas into the processing chamber, An outer tube positioned outside the inner tube; and a side wall of the inner tube having a length in a vertical direction longer than a horizontal length of at least a main surface of the substrate held by the boat, and A substrate processing apparatus, comprising: an exhaust slit formed over a plurality of the substrates in a direction and exhausting the processing chamber.

An inner tube having a processing chamber for processing a substrate, a boat for holding the substrate and carrying the substrate into the processing chamber, a gas inlet for introducing a processing gas into the processing chamber, The outer tube is located outside the side wall, and the length of the inner tube in the direction perpendicular to the substrate is formed longer than the holding portion capable of holding the substrate of the port, and the processing chamber is evacuated. A substrate processing apparatus, comprising: an exhaust slit;

2. The substrate processing apparatus according to claim 1, wherein an exhaust duct surrounding the exhaust slit is laid outside the processing chamber.

3. The substrate processing apparatus according to claim 2, wherein an exhaust duct surrounding the exhaust slit is laid outside the processing chamber.

4. The substrate processing apparatus according to claim 3, wherein a plurality of exhaust holes are opened in the exhaust duct.

5. The substrate processing apparatus according to claim 4, wherein a plurality of exhaust holes are opened in the exhaust duct.

4. The substrate processing apparatus according to claim 3, wherein the inside of the exhaust duct is divided into a plurality of sections by partition walls.

5. The substrate processing apparatus according to claim 4, wherein the inside of the exhaust duct is divided into a plurality of sections by partition walls.

The substrate processing apparatus according to claim 7, wherein the partition wall is provided in parallel with a radial direction of the substrate.

9. The substrate processing apparatus according to claim 8, wherein the partition is provided in parallel with a radial direction of the substrate.

8. The substrate processing apparatus according to claim 7, wherein the exhaust holes are respectively provided in the divided sections of the exhaust duct. 9. The substrate processing apparatus according to claim 8, wherein the exhaust holes are respectively provided in the divided sections of the exhaust duct. 8. The substrate processing apparatus according to claim 7, wherein a drain hole is provided in the exhaust duct or the partition.

9. The substrate processing apparatus according to claim 8, wherein a drain hole is provided in the exhaust duct or the partition.

The substrate according to claim 1, wherein the exhaust slit is disposed symmetrically with respect to a straight line passing through a gas supply unit and a center of the main surface of the substrate. 3. The substrate according to claim 1, wherein the substrate is disposed symmetrically with respect to a straight line passing through a gas supply unit and a center of the main surface of the substrate. A tube, a boat holding the substrate, and carrying the substrate into the processing chamber, a gas inlet for introducing a processing gas into the processing chamber, an outer tube located outside the inner tube, and a side wall of the processing chamber. A substrate processing apparatus, comprising: an exhaust slit configured to exhaust the processing chamber; and a supply unit configured to supply an inert gas to a space between the inner tube and the outer tube.

A step of carrying a boat holding a plurality of substrates into the processing chamber; a step of evacuating the inside of the au- totube; and a step of introducing a processing gas into the processing chamber in parallel with the main surface of the substrate. A length in a vertical direction is longer than a length in a horizontal direction with respect to a main surface of the substrate held on the boat at least on a side wall of the processing chamber, and the vertical length is formed over a plurality of the substrates. Exhausting the processing chamber from the exhaust slit, stopping supplying the processing gas, and carrying out the port from the processing chamber. 1 * A method of manufacturing a semiconductor, characterized in that:

Loading a port holding a plurality of substrates into the processing chamber; evacuating the vacuum chamber; and introducing a processing gas into the processing chamber in parallel with the main surface of the substrate. And a step perpendicular to the substrate on the side wall of the processing chamber is formed to be longer than a holding portion capable of holding the substrate of the boat, and the processing chamber is formed through an exhaust slit for exhausting the processing chamber. A method for manufacturing a semiconductor, comprising: evacuating; stopping supply of the processing gas; and carrying out the port from the processing chamber.