WO2004025357A2 - Monolithic optical component - Google Patents
Monolithic optical component Download PDFInfo
- Publication number
- WO2004025357A2 WO2004025357A2 PCT/IB2003/004425 IB0304425W WO2004025357A2 WO 2004025357 A2 WO2004025357 A2 WO 2004025357A2 IB 0304425 W IB0304425 W IB 0304425W WO 2004025357 A2 WO2004025357 A2 WO 2004025357A2
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- waveguide
- photodiode
- layer
- light
- component
- Prior art date
Links
- 230000003287 optical effect Effects 0.000 title claims abstract description 33
- 230000008878 coupling Effects 0.000 abstract description 6
- 238000010168 coupling process Methods 0.000 abstract description 6
- 238000005859 coupling reaction Methods 0.000 abstract description 6
- 238000005286 illumination Methods 0.000 description 7
- 239000000463 material Substances 0.000 description 7
- 239000013307 optical fiber Substances 0.000 description 6
- 239000000758 substrate Substances 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 238000005530 etching Methods 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 238000001312 dry etching Methods 0.000 description 3
- 239000006185 dispersion Substances 0.000 description 2
- 238000000407 epitaxy Methods 0.000 description 2
- 239000000835 fiber Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000000873 masking effect Effects 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 238000001451 molecular beam epitaxy Methods 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 1
- 229910005091 Si3N Inorganic materials 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 125000002524 organometallic group Chemical group 0.000 description 1
- 238000005424 photoluminescence Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000011343 solid material Substances 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/24—Coupling light guides
- G02B6/42—Coupling light guides with opto-electronic elements
- G02B6/4201—Packages, e.g. shape, construction, internal or external details
- G02B6/4204—Packages, e.g. shape, construction, internal or external details the coupling comprising intermediate optical elements, e.g. lenses, holograms
- G02B6/4206—Optical features
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0232—Optical elements or arrangements associated with the device
- H01L31/02327—Optical elements or arrangements associated with the device the optical elements being integrated or being directly associated to the device, e.g. back reflectors
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/24—Coupling light guides
- G02B6/42—Coupling light guides with opto-electronic elements
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Optics & Photonics (AREA)
- Light Receiving Elements (AREA)
Abstract
Description
Claims
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/527,621 US7298943B2 (en) | 2002-09-12 | 2003-09-10 | Monolithic optical component |
AU2003264786A AU2003264786A1 (en) | 2002-09-12 | 2003-09-10 | Monolithic optical component |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR02/11308 | 2002-09-12 | ||
FR0211308 | 2002-09-12 |
Publications (2)
Publication Number | Publication Date |
---|---|
WO2004025357A2 true WO2004025357A2 (en) | 2004-03-25 |
WO2004025357A3 WO2004025357A3 (en) | 2004-05-21 |
Family
ID=31985233
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/IB2003/004425 WO2004025357A2 (en) | 2002-09-12 | 2003-09-10 | Monolithic optical component |
Country Status (3)
Country | Link |
---|---|
US (1) | US7298943B2 (en) |
AU (1) | AU2003264786A1 (en) |
WO (1) | WO2004025357A2 (en) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100670827B1 (en) * | 2005-12-10 | 2007-01-19 | 한국전자통신연구원 | Waveguide p-i-n photodiode having graded index distribution centering on optical absorption layer |
KR20090032674A (en) * | 2007-09-28 | 2009-04-01 | 삼성전기주식회사 | Optical coupler |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO1985000076A1 (en) * | 1983-06-17 | 1985-01-03 | Rca Corporation | Phase-locked semiconductor laser array and a method of making same |
US4815084A (en) * | 1987-05-20 | 1989-03-21 | Spectra Diode Laboratories, Inc. | Semiconductor laser with integrated optical elements |
US5354709A (en) * | 1986-11-10 | 1994-10-11 | The United States Of America As Represented By The Secretary Of The Air Force | Method of making a lattice mismatched heterostructure optical waveguide |
US5381023A (en) * | 1992-08-11 | 1995-01-10 | Nec Corporation | Semiconductor device for control of a signal light |
EP1233299A1 (en) * | 2001-02-15 | 2002-08-21 | Alcatel | Monolithically integrated optical component comprising a modulator and a heterojunction bipolar transistor |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4706235A (en) * | 1985-01-25 | 1987-11-10 | Storage Technology Partners 11 | Differential track recording |
US5513196A (en) * | 1995-02-14 | 1996-04-30 | Deacon Research | Optical source with mode reshaping |
JP4168437B2 (en) * | 2000-11-09 | 2008-10-22 | 日本電気株式会社 | Semiconductor photo detector |
-
2003
- 2003-09-10 AU AU2003264786A patent/AU2003264786A1/en not_active Abandoned
- 2003-09-10 WO PCT/IB2003/004425 patent/WO2004025357A2/en not_active Application Discontinuation
- 2003-09-10 US US10/527,621 patent/US7298943B2/en not_active Expired - Fee Related
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO1985000076A1 (en) * | 1983-06-17 | 1985-01-03 | Rca Corporation | Phase-locked semiconductor laser array and a method of making same |
US5354709A (en) * | 1986-11-10 | 1994-10-11 | The United States Of America As Represented By The Secretary Of The Air Force | Method of making a lattice mismatched heterostructure optical waveguide |
US4815084A (en) * | 1987-05-20 | 1989-03-21 | Spectra Diode Laboratories, Inc. | Semiconductor laser with integrated optical elements |
US5381023A (en) * | 1992-08-11 | 1995-01-10 | Nec Corporation | Semiconductor device for control of a signal light |
EP1233299A1 (en) * | 2001-02-15 | 2002-08-21 | Alcatel | Monolithically integrated optical component comprising a modulator and a heterojunction bipolar transistor |
Also Published As
Publication number | Publication date |
---|---|
AU2003264786A1 (en) | 2004-04-30 |
US7298943B2 (en) | 2007-11-20 |
US20060165349A1 (en) | 2006-07-27 |
WO2004025357A3 (en) | 2004-05-21 |
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