WO2004021359A3 - Software refreshed memory device and method - Google Patents
Software refreshed memory device and method Download PDFInfo
- Publication number
- WO2004021359A3 WO2004021359A3 PCT/US2003/027056 US0327056W WO2004021359A3 WO 2004021359 A3 WO2004021359 A3 WO 2004021359A3 US 0327056 W US0327056 W US 0327056W WO 2004021359 A3 WO2004021359 A3 WO 2004021359A3
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- memory
- refresh
- refreshed
- memory refresh
- memory device
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/406—Management or control of the refreshing or charge-regeneration cycles
- G11C11/40603—Arbitration, priority and concurrent access to memory cells for read/write or refresh operations
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C5/00—Details of stores covered by group G11C11/00
- G11C5/005—Circuit means for protection against loss of information of semiconductor storage devices
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/406—Management or control of the refreshing or charge-regeneration cycles
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/406—Management or control of the refreshing or charge-regeneration cycles
- G11C11/40622—Partial refresh of memory arrays
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
- G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
- G11C11/408—Address circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0004—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements comprising amorphous/crystalline phase transition cells
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0009—RRAM elements whose operation depends upon chemical change
- G11C13/0011—RRAM elements whose operation depends upon chemical change comprising conductive bridging RAM [CBRAM] or programming metallization cells [PMCs]
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0021—Auxiliary circuits
- G11C13/0033—Disturbance prevention or evaluation; Refreshing of disturbed memory data
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0021—Auxiliary circuits
- G11C13/0069—Writing or programming circuits or methods
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
- G11C16/3418—Disturbance prevention or evaluation; Refreshing of disturbed memory data
- G11C16/3431—Circuits or methods to detect disturbed nonvolatile memory cells, e.g. which still read as programmed but with threshold less than the program verify threshold or read as erased but with threshold greater than the erase verify threshold, and to reverse the disturbance via a refreshing programming or erasing step
Abstract
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
AU2003268251A AU2003268251A1 (en) | 2002-08-29 | 2003-08-28 | Software refreshed memory device and method |
AT03749204T ATE517417T1 (en) | 2002-08-29 | 2003-08-28 | STORAGE DEVICE AND METHODS UPDATED THROUGH SOFTWARE |
EP03749204A EP1540657B1 (en) | 2002-08-29 | 2003-08-28 | Software refreshed memory device and method |
JP2004531891A JP4891544B2 (en) | 2002-08-29 | 2003-08-28 | Software refresh memory device and method |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/234,001 | 2002-08-29 | ||
US10/234,001 US7010644B2 (en) | 2002-08-29 | 2002-08-29 | Software refreshed memory device and method |
Publications (2)
Publication Number | Publication Date |
---|---|
WO2004021359A2 WO2004021359A2 (en) | 2004-03-11 |
WO2004021359A3 true WO2004021359A3 (en) | 2005-02-24 |
Family
ID=31977345
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US2003/027056 WO2004021359A2 (en) | 2002-08-29 | 2003-08-28 | Software refreshed memory device and method |
Country Status (9)
Country | Link |
---|---|
US (5) | US7010644B2 (en) |
EP (2) | EP1540657B1 (en) |
JP (1) | JP4891544B2 (en) |
KR (1) | KR100626933B1 (en) |
CN (1) | CN100483546C (en) |
AT (2) | ATE517417T1 (en) |
AU (1) | AU2003268251A1 (en) |
TW (1) | TWI263221B (en) |
WO (1) | WO2004021359A2 (en) |
Families Citing this family (50)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6560155B1 (en) * | 2001-10-24 | 2003-05-06 | Micron Technology, Inc. | System and method for power saving memory refresh for dynamic random access memory devices after an extended interval |
US7010644B2 (en) | 2002-08-29 | 2006-03-07 | Micron Technology, Inc. | Software refreshed memory device and method |
DE102004018859B3 (en) * | 2004-04-19 | 2005-09-15 | Infineon Technologies Ag | Memory storage circuit e.g. for flip flop circuit for making available video or audio data for given length of time in terminal, has memory cell with PMC resistor having solid electrolyte material with write circuit |
US8531863B2 (en) | 2005-05-20 | 2013-09-10 | Adesto Technologies Corporation | Method for operating an integrated circuit having a resistivity changing memory cell |
JP4813264B2 (en) | 2006-06-14 | 2011-11-09 | 株式会社日立製作所 | Storage system |
KR100875292B1 (en) * | 2006-09-19 | 2008-12-23 | 삼성전자주식회사 | Flash memory device and its refresh method |
US7539050B2 (en) * | 2006-11-22 | 2009-05-26 | Qimonda North America Corp. | Resistive memory including refresh operation |
US8042022B2 (en) | 2007-03-08 | 2011-10-18 | Micron Technology, Inc. | Method, system, and apparatus for distributed decoding during prolonged refresh |
JP5159224B2 (en) | 2007-09-21 | 2013-03-06 | 株式会社東芝 | Resistance change memory device |
US8486552B2 (en) | 2008-06-30 | 2013-07-16 | Lg Chem, Ltd. | Battery module having cooling manifold with ported screws and method for cooling the battery module |
US9759495B2 (en) | 2008-06-30 | 2017-09-12 | Lg Chem, Ltd. | Battery cell assembly having heat exchanger with serpentine flow path |
JP5262402B2 (en) * | 2008-08-04 | 2013-08-14 | 富士通株式会社 | Storage device and data holding method |
US7825479B2 (en) * | 2008-08-06 | 2010-11-02 | International Business Machines Corporation | Electrical antifuse having a multi-thickness dielectric layer |
US9755705B2 (en) | 2008-08-07 | 2017-09-05 | Qualcomm Incorporated | Method and apparatus for supporting multi-user and single-user MIMO in a wireless communication system |
US9294160B2 (en) | 2008-08-11 | 2016-03-22 | Qualcomm Incorporated | Method and apparatus for supporting distributed MIMO in a wireless communication system |
US8663829B2 (en) | 2009-04-30 | 2014-03-04 | Lg Chem, Ltd. | Battery systems, battery modules, and method for cooling a battery module |
US8403030B2 (en) | 2009-04-30 | 2013-03-26 | Lg Chem, Ltd. | Cooling manifold |
EP2273365A1 (en) * | 2009-06-26 | 2011-01-12 | Thomson Licensing | Combined memory and storage device in an apparatus for data processing |
US8399118B2 (en) | 2009-07-29 | 2013-03-19 | Lg Chem, Ltd. | Battery module and method for cooling the battery module |
US8399119B2 (en) | 2009-08-28 | 2013-03-19 | Lg Chem, Ltd. | Battery module and method for cooling the battery module |
US9411674B2 (en) * | 2010-03-19 | 2016-08-09 | Microsoft Technology Licensing, Llc | Providing hardware resources having different reliabilities for use by an application |
US8412882B2 (en) | 2010-06-18 | 2013-04-02 | Microsoft Corporation | Leveraging chip variability |
US8662153B2 (en) | 2010-10-04 | 2014-03-04 | Lg Chem, Ltd. | Battery cell assembly, heat exchanger, and method for manufacturing the heat exchanger |
US8756474B2 (en) * | 2011-03-21 | 2014-06-17 | Denso International America, Inc. | Method for initiating a refresh operation in a solid-state nonvolatile memory device |
US9105950B2 (en) | 2012-03-29 | 2015-08-11 | Lg Chem, Ltd. | Battery system having an evaporative cooling member with a plate portion and a method for cooling the battery system |
US9605914B2 (en) | 2012-03-29 | 2017-03-28 | Lg Chem, Ltd. | Battery system and method of assembling the battery system |
US9379420B2 (en) | 2012-03-29 | 2016-06-28 | Lg Chem, Ltd. | Battery system and method for cooling the battery system |
US8852781B2 (en) | 2012-05-19 | 2014-10-07 | Lg Chem, Ltd. | Battery cell assembly and method for manufacturing a cooling fin for the battery cell assembly |
WO2013183155A1 (en) * | 2012-06-07 | 2013-12-12 | 富士通株式会社 | Control device that selectively refreshes memory |
US9306199B2 (en) | 2012-08-16 | 2016-04-05 | Lg Chem, Ltd. | Battery module and method for assembling the battery module |
KR102050473B1 (en) | 2012-09-24 | 2019-11-29 | 삼성전자주식회사 | Semiconductor memory device controlling refresh period and memory system |
US8972652B2 (en) | 2012-11-19 | 2015-03-03 | Spansion Llc | Data refresh in non-volatile memory |
US9083066B2 (en) | 2012-11-27 | 2015-07-14 | Lg Chem, Ltd. | Battery system and method for cooling a battery cell assembly |
US8852783B2 (en) | 2013-02-13 | 2014-10-07 | Lg Chem, Ltd. | Battery cell assembly and method for manufacturing the battery cell assembly |
US9647292B2 (en) | 2013-04-12 | 2017-05-09 | Lg Chem, Ltd. | Battery cell assembly and method for manufacturing a cooling fin for the battery cell assembly |
US9184424B2 (en) | 2013-07-08 | 2015-11-10 | Lg Chem, Ltd. | Battery assembly |
US9257732B2 (en) | 2013-10-22 | 2016-02-09 | Lg Chem, Ltd. | Battery cell assembly |
US9444124B2 (en) | 2014-01-23 | 2016-09-13 | Lg Chem, Ltd. | Battery cell assembly and method for coupling a cooling fin to first and second cooling manifolds |
US10770762B2 (en) | 2014-05-09 | 2020-09-08 | Lg Chem, Ltd. | Battery module and method of assembling the battery module |
US10084218B2 (en) | 2014-05-09 | 2018-09-25 | Lg Chem, Ltd. | Battery pack and method of assembling the battery pack |
US9484559B2 (en) | 2014-10-10 | 2016-11-01 | Lg Chem, Ltd. | Battery cell assembly |
US9412980B2 (en) | 2014-10-17 | 2016-08-09 | Lg Chem, Ltd. | Battery cell assembly |
US9786894B2 (en) | 2014-11-03 | 2017-10-10 | Lg Chem, Ltd. | Battery pack |
US9627724B2 (en) | 2014-12-04 | 2017-04-18 | Lg Chem, Ltd. | Battery pack having a cooling plate assembly |
JP6180450B2 (en) * | 2015-02-02 | 2017-08-16 | キヤノン株式会社 | Control device, control method and program for control device |
US9679632B2 (en) * | 2015-04-08 | 2017-06-13 | Khalifa University of Science and Technology | Volatile memory erasure by the randomization of data stored in memory cells |
KR102474937B1 (en) * | 2016-03-21 | 2022-12-07 | 에스케이하이닉스 주식회사 | Data storage device and operating method thereof |
US10622065B2 (en) * | 2018-09-12 | 2020-04-14 | Micron Technology, Inc. | Dedicated commands for memory operations |
US11456033B2 (en) | 2018-09-12 | 2022-09-27 | Micron Technology, Inc. | Dedicated commands for memory operations |
US10777297B2 (en) * | 2018-12-10 | 2020-09-15 | Micron Technology, Inc. | Age-based refresh of firmware |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0156722A1 (en) * | 1984-03-16 | 1985-10-02 | Artus, Société Anonyme | Microprocessor and dynamic RAM system with software refreshment, application to a disturbance recorder |
US4625296A (en) * | 1984-01-17 | 1986-11-25 | The Perkin-Elmer Corporation | Memory refresh circuit with varying system transparency |
US5148546A (en) * | 1991-04-22 | 1992-09-15 | Blodgett Greg A | Method and system for minimizing power demands on portable computers and the like by refreshing selected dram cells |
JPH0512094A (en) * | 1991-07-05 | 1993-01-22 | Shimadzu Corp | Transaction managing device |
US5574684A (en) * | 1995-01-09 | 1996-11-12 | Mitsubishi Electric Semiconductor Software Co., Ltd. | Flash memory having data refresh function and data refresh method of flash memory |
US6166959A (en) * | 1998-09-17 | 2000-12-26 | Atmel Corporation | Flash memory array with internal refresh |
WO2001086400A1 (en) * | 2000-05-10 | 2001-11-15 | Elan Research | Software control of dram refresh to reduce power consumption in a data processing system |
Family Cites Families (182)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4737A (en) * | 1846-09-03 | Window-sash fastener | ||
US3271591A (en) | 1963-09-20 | 1966-09-06 | Energy Conversion Devices Inc | Symmetrical current controlling device |
US3622319A (en) | 1966-10-20 | 1971-11-23 | Western Electric Co | Nonreflecting photomasks and methods of making same |
US3868651A (en) | 1970-08-13 | 1975-02-25 | Energy Conversion Devices Inc | Method and apparatus for storing and reading data in a memory having catalytic material to initiate amorphous to crystalline change in memory structure |
US3743847A (en) | 1971-06-01 | 1973-07-03 | Motorola Inc | Amorphous silicon film as a uv filter |
US4267261A (en) | 1971-07-15 | 1981-05-12 | Energy Conversion Devices, Inc. | Method for full format imaging |
US3961314A (en) | 1974-03-05 | 1976-06-01 | Energy Conversion Devices, Inc. | Structure and method for producing an image |
US3966317A (en) | 1974-04-08 | 1976-06-29 | Energy Conversion Devices, Inc. | Dry process production of archival microform records from hard copy |
US4177474A (en) | 1977-05-18 | 1979-12-04 | Energy Conversion Devices, Inc. | High temperature amorphous semiconductor member and method of making the same |
JPS5565365A (en) | 1978-11-07 | 1980-05-16 | Nippon Telegr & Teleph Corp <Ntt> | Pattern forming method |
DE2901303C2 (en) | 1979-01-15 | 1984-04-19 | Max Planck Gesellschaft Zur Foerderung Der Wissenschaften E.V., 3400 Goettingen | Solid ionic conductor material, its use and process for its manufacture |
US4317169A (en) | 1979-02-14 | 1982-02-23 | Honeywell Information Systems Inc. | Data processing system having centralized memory refresh |
US4312938A (en) | 1979-07-06 | 1982-01-26 | Drexler Technology Corporation | Method for making a broadband reflective laser recording and data storage medium with absorptive underlayer |
US4269935A (en) | 1979-07-13 | 1981-05-26 | Ionomet Company, Inc. | Process of doping silver image in chalcogenide layer |
FR2465269B1 (en) * | 1979-09-12 | 1985-12-27 | Cii Honeywell Bull | ASYNCHRONOUS REQUEST SELECTOR IN AN INFORMATION PROCESSING SYSTEM |
US4316946A (en) | 1979-12-03 | 1982-02-23 | Ionomet Company, Inc. | Surface sensitized chalcogenide product and process for making and using the same |
US4499557A (en) | 1980-10-28 | 1985-02-12 | Energy Conversion Devices, Inc. | Programmable cell for use in programmable electronic arrays |
US4459660A (en) | 1981-04-13 | 1984-07-10 | Texas Instruments Incorporated | Microcomputer with automatic refresh of on-chip dynamic RAM transparent to CPU |
US4405710A (en) | 1981-06-22 | 1983-09-20 | Cornell Research Foundation, Inc. | Ion beam exposure of (g-Gex -Se1-x) inorganic resists |
US4737379A (en) | 1982-09-24 | 1988-04-12 | Energy Conversion Devices, Inc. | Plasma deposited coatings, and low temperature plasma method of making same |
US4545111A (en) | 1983-01-18 | 1985-10-08 | Energy Conversion Devices, Inc. | Method for making, parallel preprogramming or field programming of electronic matrix arrays |
US4608296A (en) | 1983-12-06 | 1986-08-26 | Energy Conversion Devices, Inc. | Superconducting films and devices exhibiting AC to DC conversion |
GB8409022D0 (en) * | 1984-04-06 | 1984-05-16 | Qmc Ind Res | Information holding device |
US4795657A (en) | 1984-04-13 | 1989-01-03 | Energy Conversion Devices, Inc. | Method of fabricating a programmable array |
US4668968A (en) | 1984-05-14 | 1987-05-26 | Energy Conversion Devices, Inc. | Integrated circuit compatible thin film field effect transistor and method of making same |
US4843443A (en) | 1984-05-14 | 1989-06-27 | Energy Conversion Devices, Inc. | Thin film field effect transistor and method of making same |
US4670763A (en) | 1984-05-14 | 1987-06-02 | Energy Conversion Devices, Inc. | Thin film field effect transistor |
US4769338A (en) | 1984-05-14 | 1988-09-06 | Energy Conversion Devices, Inc. | Thin film field effect transistor and method of making same |
US4673957A (en) | 1984-05-14 | 1987-06-16 | Energy Conversion Devices, Inc. | Integrated circuit compatible thin film field effect transistor and method of making same |
US4678679A (en) | 1984-06-25 | 1987-07-07 | Energy Conversion Devices, Inc. | Continuous deposition of activated process gases |
US4646266A (en) | 1984-09-28 | 1987-02-24 | Energy Conversion Devices, Inc. | Programmable semiconductor structures and methods for using the same |
US4637895A (en) | 1985-04-01 | 1987-01-20 | Energy Conversion Devices, Inc. | Gas mixtures for the vapor deposition of semiconductor material |
US4664939A (en) | 1985-04-01 | 1987-05-12 | Energy Conversion Devices, Inc. | Vertical semiconductor processor |
US4710899A (en) | 1985-06-10 | 1987-12-01 | Energy Conversion Devices, Inc. | Data storage medium incorporating a transition metal for increased switching speed |
US4671618A (en) | 1986-05-22 | 1987-06-09 | Wu Bao Gang | Liquid crystalline-plastic material having submillisecond switch times and extended memory |
US4766471A (en) | 1986-01-23 | 1988-08-23 | Energy Conversion Devices, Inc. | Thin film electro-optical devices |
US4818717A (en) | 1986-06-27 | 1989-04-04 | Energy Conversion Devices, Inc. | Method for making electronic matrix arrays |
US4728406A (en) | 1986-08-18 | 1988-03-01 | Energy Conversion Devices, Inc. | Method for plasma - coating a semiconductor body |
US4809044A (en) | 1986-08-22 | 1989-02-28 | Energy Conversion Devices, Inc. | Thin film overvoltage protection devices |
US4845533A (en) | 1986-08-22 | 1989-07-04 | Energy Conversion Devices, Inc. | Thin film electrical devices with amorphous carbon electrodes and method of making same |
US4853785A (en) | 1986-10-15 | 1989-08-01 | Energy Conversion Devices, Inc. | Electronic camera including electronic signal storage cartridge |
US4788594A (en) | 1986-10-15 | 1988-11-29 | Energy Conversion Devices, Inc. | Solid state electronic camera including thin film matrix of photosensors |
US4847674A (en) | 1987-03-10 | 1989-07-11 | Advanced Micro Devices, Inc. | High speed interconnect system with refractory non-dogbone contacts and an active electromigration suppression mechanism |
US4800526A (en) | 1987-05-08 | 1989-01-24 | Gaf Corporation | Memory element for information storage and retrieval system and associated process |
US4891330A (en) | 1987-07-27 | 1990-01-02 | Energy Conversion Devices, Inc. | Method of fabricating n-type and p-type microcrystalline semiconductor alloy material including band gap widening elements |
US4775425A (en) | 1987-07-27 | 1988-10-04 | Energy Conversion Devices, Inc. | P and n-type microcrystalline semiconductor alloy material including band gap widening elements, devices utilizing same |
US5272359A (en) | 1988-04-07 | 1993-12-21 | California Institute Of Technology | Reversible non-volatile switch based on a TCNQ charge transfer complex |
GB8910854D0 (en) | 1989-05-11 | 1989-06-28 | British Petroleum Co Plc | Semiconductor device |
JP2913099B2 (en) * | 1989-10-06 | 1999-06-28 | 京セラ株式会社 | DRAM refresh device |
JP3225531B2 (en) * | 1990-05-15 | 2001-11-05 | セイコーエプソン株式会社 | Memory card |
JPH0453086A (en) * | 1990-06-20 | 1992-02-20 | Pfu Ltd | Refresh control system |
US5159661A (en) | 1990-10-05 | 1992-10-27 | Energy Conversion Devices, Inc. | Vertically interconnected parallel distributed processor |
US5314772A (en) | 1990-10-09 | 1994-05-24 | Arizona Board Of Regents | High resolution, multi-layer resist for microlithography and method therefor |
JPH0770731B2 (en) | 1990-11-22 | 1995-07-31 | 松下電器産業株式会社 | Electroplastic element |
US5414271A (en) | 1991-01-18 | 1995-05-09 | Energy Conversion Devices, Inc. | Electrically erasable memory elements having improved set resistance stability |
US5296716A (en) | 1991-01-18 | 1994-03-22 | Energy Conversion Devices, Inc. | Electrically erasable, directly overwritable, multibit single cell memory elements and arrays fabricated therefrom |
US5534711A (en) | 1991-01-18 | 1996-07-09 | Energy Conversion Devices, Inc. | Electrically erasable, directly overwritable, multibit single cell memory elements and arrays fabricated therefrom |
US5341328A (en) | 1991-01-18 | 1994-08-23 | Energy Conversion Devices, Inc. | Electrically erasable memory elements having reduced switching current requirements and increased write/erase cycle life |
US5166758A (en) | 1991-01-18 | 1992-11-24 | Energy Conversion Devices, Inc. | Electrically erasable phase change memory |
US5406509A (en) | 1991-01-18 | 1995-04-11 | Energy Conversion Devices, Inc. | Electrically erasable, directly overwritable, multibit single cell memory elements and arrays fabricated therefrom |
US5534712A (en) | 1991-01-18 | 1996-07-09 | Energy Conversion Devices, Inc. | Electrically erasable memory elements characterized by reduced current and improved thermal stability |
US5536947A (en) | 1991-01-18 | 1996-07-16 | Energy Conversion Devices, Inc. | Electrically erasable, directly overwritable, multibit single cell memory element and arrays fabricated therefrom |
US5596522A (en) | 1991-01-18 | 1997-01-21 | Energy Conversion Devices, Inc. | Homogeneous compositions of microcrystalline semiconductor material, semiconductor devices and directly overwritable memory elements fabricated therefrom, and arrays fabricated from the memory elements |
US5335219A (en) | 1991-01-18 | 1994-08-02 | Ovshinsky Stanford R | Homogeneous composition of microcrystalline semiconductor material, semiconductor devices and directly overwritable memory elements fabricated therefrom, and arrays fabricated from the memory elements |
US5128099A (en) | 1991-02-15 | 1992-07-07 | Energy Conversion Devices, Inc. | Congruent state changeable optical memory material and device |
US5219788A (en) | 1991-02-25 | 1993-06-15 | Ibm Corporation | Bilayer metallization cap for photolithography |
US5177567A (en) | 1991-07-19 | 1993-01-05 | Energy Conversion Devices, Inc. | Thin-film structure for chalcogenide electrical switching devices and process therefor |
US5359205A (en) | 1991-11-07 | 1994-10-25 | Energy Conversion Devices, Inc. | Electrically erasable memory elements characterized by reduced current and improved thermal stability |
US5238862A (en) | 1992-03-18 | 1993-08-24 | Micron Technology, Inc. | Method of forming a stacked capacitor with striated electrode |
US5497140A (en) * | 1992-08-12 | 1996-03-05 | Micron Technology, Inc. | Electrically powered postage stamp or mailing or shipping label operative with radio frequency (RF) communication |
US5512328A (en) | 1992-08-07 | 1996-04-30 | Hitachi, Ltd. | Method for forming a pattern and forming a thin film used in pattern formation |
US5350484A (en) | 1992-09-08 | 1994-09-27 | Intel Corporation | Method for the anisotropic etching of metal films in the fabrication of interconnects |
US5818749A (en) | 1993-08-20 | 1998-10-06 | Micron Technology, Inc. | Integrated circuit memory device |
BE1007902A3 (en) | 1993-12-23 | 1995-11-14 | Philips Electronics Nv | Switching element with memory with schottky barrier tunnel. |
JP2571018B2 (en) | 1994-05-31 | 1997-01-16 | 日本電気株式会社 | Method for manufacturing solid-state imaging device |
US5500532A (en) * | 1994-08-18 | 1996-03-19 | Arizona Board Of Regents | Personal electronic dosimeter |
JP2643870B2 (en) | 1994-11-29 | 1997-08-20 | 日本電気株式会社 | Method for manufacturing semiconductor memory device |
US5549762A (en) | 1995-01-13 | 1996-08-27 | International Rectifier Corporation | Photovoltaic generator with dielectric isolation and bonded, insulated wafer layers |
US5543737A (en) | 1995-02-10 | 1996-08-06 | Energy Conversion Devices, Inc. | Logical operation circuit employing two-terminal chalcogenide switches |
US5869843A (en) | 1995-06-07 | 1999-02-09 | Micron Technology, Inc. | Memory array having a multi-state element and method for forming such array or cells thereof |
US5789758A (en) | 1995-06-07 | 1998-08-04 | Micron Technology, Inc. | Chalcogenide memory cell with a plurality of chalcogenide electrodes |
JP3363154B2 (en) | 1995-06-07 | 2003-01-08 | ミクロン テクノロジー、インコーポレイテッド | Stack / trench diode for use with multi-state material in a non-volatile memory cell |
US6420725B1 (en) * | 1995-06-07 | 2002-07-16 | Micron Technology, Inc. | Method and apparatus for forming an integrated circuit electrode having a reduced contact area |
US5751012A (en) * | 1995-06-07 | 1998-05-12 | Micron Technology, Inc. | Polysilicon pillar diode for use in a non-volatile memory cell |
US5873114A (en) * | 1995-08-18 | 1999-02-16 | Advanced Micro Devices, Inc. | Integrated processor and memory control unit including refresh queue logic for refreshing DRAM during idle cycles |
US5714768A (en) | 1995-10-24 | 1998-02-03 | Energy Conversion Devices, Inc. | Second-layer phase change memory array on top of a logic device |
US5694054A (en) | 1995-11-28 | 1997-12-02 | Energy Conversion Devices, Inc. | Integrated drivers for flat panel displays employing chalcogenide logic elements |
US5591501A (en) | 1995-12-20 | 1997-01-07 | Energy Conversion Devices, Inc. | Optical recording medium having a plurality of discrete phase change data recording points |
US5777923A (en) * | 1996-06-17 | 1998-07-07 | Aplus Integrated Circuits, Inc. | Flash memory read/write controller |
US5687112A (en) * | 1996-04-19 | 1997-11-11 | Energy Conversion Devices, Inc. | Multibit single cell memory element having tapered contact |
US5851882A (en) | 1996-05-06 | 1998-12-22 | Micron Technology, Inc. | ZPROM manufacture and design and methods for forming thin structures using spacers as an etching mask |
JPH09312094A (en) * | 1996-05-23 | 1997-12-02 | Nec Eng Ltd | Refresh control system |
JPH09320289A (en) * | 1996-05-30 | 1997-12-12 | Toshiba Corp | Semiconductor nonvolatile memory |
US5761115A (en) * | 1996-05-30 | 1998-06-02 | Axon Technologies Corporation | Programmable metallization cell structure and method of making same |
US5789277A (en) * | 1996-07-22 | 1998-08-04 | Micron Technology, Inc. | Method of making chalogenide memory device |
US5814527A (en) | 1996-07-22 | 1998-09-29 | Micron Technology, Inc. | Method of making small pores defined by a disposable internal spacer for use in chalcogenide memories |
US6087674A (en) * | 1996-10-28 | 2000-07-11 | Energy Conversion Devices, Inc. | Memory element with memory material comprising phase-change material and dielectric material |
US5825046A (en) | 1996-10-28 | 1998-10-20 | Energy Conversion Devices, Inc. | Composite memory material comprising a mixture of phase-change memory material and dielectric material |
US5846889A (en) | 1997-03-14 | 1998-12-08 | The United States Of America As Represented By The Secretary Of The Navy | Infrared transparent selenide glasses |
US5998066A (en) | 1997-05-16 | 1999-12-07 | Aerial Imaging Corporation | Gray scale mask and depth pattern transfer technique using inorganic chalcogenide glass |
US6031287A (en) | 1997-06-18 | 2000-02-29 | Micron Technology, Inc. | Contact structure and memory element incorporating the same |
US5933365A (en) | 1997-06-19 | 1999-08-03 | Energy Conversion Devices, Inc. | Memory element with energy control mechanism |
US5822265A (en) * | 1997-07-29 | 1998-10-13 | Rockwell Semiconductor Systems, Inc. | DRAM controller with background refresh |
EP1044452B1 (en) * | 1997-12-04 | 2003-03-19 | Axon Technologies Corporation | Programmable sub-surface aggregating metallization structure and method of making same |
US6011757A (en) | 1998-01-27 | 2000-01-04 | Ovshinsky; Stanford R. | Optical recording media having increased erasability |
US6167484A (en) * | 1998-05-12 | 2000-12-26 | Motorola, Inc. | Method and apparatus for leveraging history bits to optimize memory refresh performance |
US5912839A (en) | 1998-06-23 | 1999-06-15 | Energy Conversion Devices, Inc. | Universal memory element and method of programming same |
US6141241A (en) | 1998-06-23 | 2000-10-31 | Energy Conversion Devices, Inc. | Universal memory element with systems employing same and apparatus and method for reading, writing and programming same |
US6388324B2 (en) * | 1998-08-31 | 2002-05-14 | Arizona Board Of Regents | Self-repairing interconnections for electrical circuits |
US6635914B2 (en) * | 2000-09-08 | 2003-10-21 | Axon Technologies Corp. | Microelectronic programmable device and methods of forming and programming the same |
JP2002536840A (en) * | 1999-02-11 | 2002-10-29 | アリゾナ ボード オブ リージェンツ | Programmable microelectronic device and method of forming and programming the same |
US6072716A (en) | 1999-04-14 | 2000-06-06 | Massachusetts Institute Of Technology | Memory structures and methods of making same |
DE60030828T2 (en) * | 1999-07-09 | 2007-02-08 | Bts Holding International Bv | OPTICAL SENSING DEVICE WITH SWITCHABLE RESOLUTION |
US6865117B2 (en) | 2000-02-11 | 2005-03-08 | Axon Technologies Corporation | Programming circuit for a programmable microelectronic device, system including the circuit, and method of forming the same |
US6914802B2 (en) * | 2000-02-11 | 2005-07-05 | Axon Technologies Corporation | Microelectronic photonic structure and device and method of forming the same |
US6396744B1 (en) * | 2000-04-25 | 2002-05-28 | Multi Level Memory Technology | Flash memory with dynamic refresh |
US6501111B1 (en) | 2000-06-30 | 2002-12-31 | Intel Corporation | Three-dimensional (3D) programmable device |
US6440837B1 (en) | 2000-07-14 | 2002-08-27 | Micron Technology, Inc. | Method of forming a contact structure in a semiconductor device |
US6563156B2 (en) | 2001-03-15 | 2003-05-13 | Micron Technology, Inc. | Memory elements and methods for making same |
US6567293B1 (en) * | 2000-09-29 | 2003-05-20 | Ovonyx, Inc. | Single level metal memory cell using chalcogenide cladding |
US6555860B2 (en) * | 2000-09-29 | 2003-04-29 | Intel Corporation | Compositionally modified resistive electrode |
US6339544B1 (en) | 2000-09-29 | 2002-01-15 | Intel Corporation | Method to enhance performance of thermal resistor device |
US6563164B2 (en) * | 2000-09-29 | 2003-05-13 | Ovonyx, Inc. | Compositionally modified resistive electrode |
US6429064B1 (en) | 2000-09-29 | 2002-08-06 | Intel Corporation | Reduced contact area of sidewall conductor |
US6404665B1 (en) * | 2000-09-29 | 2002-06-11 | Intel Corporation | Compositionally modified resistive electrode |
US6653193B2 (en) * | 2000-12-08 | 2003-11-25 | Micron Technology, Inc. | Resistance variable device |
US6649928B2 (en) | 2000-12-13 | 2003-11-18 | Intel Corporation | Method to selectively remove one side of a conductive bottom electrode of a phase-change memory cell and structure obtained thereby |
US6696355B2 (en) * | 2000-12-14 | 2004-02-24 | Ovonyx, Inc. | Method to selectively increase the top resistance of the lower programming electrode in a phase-change memory |
US6437383B1 (en) | 2000-12-21 | 2002-08-20 | Intel Corporation | Dual trench isolation for a phase-change memory cell and method of making same |
US6569705B2 (en) * | 2000-12-21 | 2003-05-27 | Intel Corporation | Metal structure for a phase-change memory device |
US6646297B2 (en) | 2000-12-26 | 2003-11-11 | Ovonyx, Inc. | Lower electrode isolation in a double-wide trench |
US6534781B2 (en) * | 2000-12-26 | 2003-03-18 | Ovonyx, Inc. | Phase-change memory bipolar array utilizing a single shallow trench isolation for creating an individual active area region for two memory array elements and one bipolar base contact |
US6531373B2 (en) * | 2000-12-27 | 2003-03-11 | Ovonyx, Inc. | Method of forming a phase-change memory cell using silicon on insulator low electrode in charcogenide elements |
US6687427B2 (en) * | 2000-12-29 | 2004-02-03 | Intel Corporation | Optic switch |
US6727192B2 (en) | 2001-03-01 | 2004-04-27 | Micron Technology, Inc. | Methods of metal doping a chalcogenide material |
US6348365B1 (en) * | 2001-03-02 | 2002-02-19 | Micron Technology, Inc. | PCRAM cell manufacturing |
US6734455B2 (en) * | 2001-03-15 | 2004-05-11 | Micron Technology, Inc. | Agglomeration elimination for metal sputter deposition of chalcogenides |
US6473332B1 (en) | 2001-04-04 | 2002-10-29 | The University Of Houston System | Electrically variable multi-state resistance computing |
US7102150B2 (en) | 2001-05-11 | 2006-09-05 | Harshfield Steven T | PCRAM memory cell and method of making same |
US6480438B1 (en) | 2001-06-12 | 2002-11-12 | Ovonyx, Inc. | Providing equal cell programming conditions across a large and high density array of phase-change memory cells |
US6613604B2 (en) | 2001-08-02 | 2003-09-02 | Ovonyx, Inc. | Method for making small pore for use in programmable resistance memory element |
US6589714B2 (en) * | 2001-06-26 | 2003-07-08 | Ovonyx, Inc. | Method for making programmable resistance memory element using silylated photoresist |
US6487113B1 (en) | 2001-06-29 | 2002-11-26 | Ovonyx, Inc. | Programming a phase-change memory with slow quench time |
US6462984B1 (en) | 2001-06-29 | 2002-10-08 | Intel Corporation | Biasing scheme of floating unselected wordlines and bitlines of a diode-based memory array |
US6570784B2 (en) * | 2001-06-29 | 2003-05-27 | Ovonyx, Inc. | Programming a phase-change material memory |
US6511862B2 (en) * | 2001-06-30 | 2003-01-28 | Ovonyx, Inc. | Modified contact for programmable devices |
US6605527B2 (en) | 2001-06-30 | 2003-08-12 | Intel Corporation | Reduced area intersection between electrode and programming element |
US6511867B2 (en) * | 2001-06-30 | 2003-01-28 | Ovonyx, Inc. | Utilizing atomic layer deposition for programmable device |
US6673700B2 (en) * | 2001-06-30 | 2004-01-06 | Ovonyx, Inc. | Reduced area intersection between electrode and programming element |
US6514805B2 (en) * | 2001-06-30 | 2003-02-04 | Intel Corporation | Trench sidewall profile for device isolation |
US6642102B2 (en) | 2001-06-30 | 2003-11-04 | Intel Corporation | Barrier material encapsulation of programmable material |
US6590807B2 (en) * | 2001-08-02 | 2003-07-08 | Intel Corporation | Method for reading a structural phase-change memory |
US6737312B2 (en) * | 2001-08-27 | 2004-05-18 | Micron Technology, Inc. | Method of fabricating dual PCRAM cells sharing a common electrode |
US6955940B2 (en) * | 2001-08-29 | 2005-10-18 | Micron Technology, Inc. | Method of forming chalcogenide comprising devices |
US6784018B2 (en) * | 2001-08-29 | 2004-08-31 | Micron Technology, Inc. | Method of forming chalcogenide comprising devices and method of forming a programmable memory cell of memory circuitry |
US6881623B2 (en) * | 2001-08-29 | 2005-04-19 | Micron Technology, Inc. | Method of forming chalcogenide comprising devices, method of forming a programmable memory cell of memory circuitry, and a chalcogenide comprising device |
US6646902B2 (en) * | 2001-08-30 | 2003-11-11 | Micron Technology, Inc. | Method of retaining memory state in a programmable conductor RAM |
US20030047765A1 (en) * | 2001-08-30 | 2003-03-13 | Campbell Kristy A. | Stoichiometry for chalcogenide glasses useful for memory devices and method of formation |
US6709958B2 (en) * | 2001-08-30 | 2004-03-23 | Micron Technology, Inc. | Integrated circuit device and fabrication using metal-doped chalcogenide materials |
US6507061B1 (en) * | 2001-08-31 | 2003-01-14 | Intel Corporation | Multiple layer phase-change memory |
JP4214055B2 (en) * | 2001-09-01 | 2009-01-28 | エナージー コンバーション デバイセス インコーポレイテッド | Enhanced data storage in optical data storage and retrieval systems using blue lasers and / or plasmon lenses |
US6545287B2 (en) * | 2001-09-07 | 2003-04-08 | Intel Corporation | Using selective deposition to form phase-change memory cells |
US6586761B2 (en) * | 2001-09-07 | 2003-07-01 | Intel Corporation | Phase change material memory device |
WO2003028098A2 (en) * | 2001-09-26 | 2003-04-03 | Axon Technologies Corporation | Programmable chip-to-substrate interconnect structure and device and method of forming same |
US6690026B2 (en) * | 2001-09-28 | 2004-02-10 | Intel Corporation | Method of fabricating a three-dimensional array of active media |
WO2003032392A2 (en) * | 2001-10-09 | 2003-04-17 | Axon Technologies Corporation | Programmable microelectronic device, structure, and system, and method of forming the same |
US6566700B2 (en) * | 2001-10-11 | 2003-05-20 | Ovonyx, Inc. | Carbon-containing interfacial layer for phase-change memory |
US6545907B1 (en) * | 2001-10-30 | 2003-04-08 | Ovonyx, Inc. | Technique and apparatus for performing write operations to a phase change material memory device |
US6576921B2 (en) * | 2001-11-08 | 2003-06-10 | Intel Corporation | Isolating phase change material memory cells |
US6815818B2 (en) * | 2001-11-19 | 2004-11-09 | Micron Technology, Inc. | Electrode structure for use in an integrated circuit |
US6791859B2 (en) * | 2001-11-20 | 2004-09-14 | Micron Technology, Inc. | Complementary bit PCRAM sense amplifier and method of operation |
US6873538B2 (en) * | 2001-12-20 | 2005-03-29 | Micron Technology, Inc. | Programmable conductor random access memory and a method for writing thereto |
US6667900B2 (en) | 2001-12-28 | 2003-12-23 | Ovonyx, Inc. | Method and apparatus to operate a memory cell |
US6625054B2 (en) | 2001-12-28 | 2003-09-23 | Intel Corporation | Method and apparatus to program a phase change memory |
US6512241B1 (en) * | 2001-12-31 | 2003-01-28 | Intel Corporation | Phase change material memory device |
US6909656B2 (en) * | 2002-01-04 | 2005-06-21 | Micron Technology, Inc. | PCRAM rewrite prevention |
US20030143782A1 (en) * | 2002-01-31 | 2003-07-31 | Gilton Terry L. | Methods of forming germanium selenide comprising devices and methods of forming silver selenide comprising structures |
US6791885B2 (en) | 2002-02-19 | 2004-09-14 | Micron Technology, Inc. | Programmable conductor random access memory and method for sensing same |
US6731528B2 (en) * | 2002-05-03 | 2004-05-04 | Micron Technology, Inc. | Dual write cycle programmable conductor memory system and method of operation |
US6671710B2 (en) | 2002-05-10 | 2003-12-30 | Energy Conversion Devices, Inc. | Methods of computing with digital multistate phase change materials |
US6918382B2 (en) * | 2002-08-26 | 2005-07-19 | Energy Conversion Devices, Inc. | Hydrogen powered scooter |
US7010644B2 (en) * | 2002-08-29 | 2006-03-07 | Micron Technology, Inc. | Software refreshed memory device and method |
-
2002
- 2002-08-29 US US10/234,001 patent/US7010644B2/en not_active Expired - Lifetime
-
2003
- 2003-08-28 AT AT03749204T patent/ATE517417T1/en not_active IP Right Cessation
- 2003-08-28 AT AT10075616T patent/ATE557398T1/en active
- 2003-08-28 EP EP03749204A patent/EP1540657B1/en not_active Expired - Lifetime
- 2003-08-28 JP JP2004531891A patent/JP4891544B2/en not_active Expired - Lifetime
- 2003-08-28 WO PCT/US2003/027056 patent/WO2004021359A2/en active Application Filing
- 2003-08-28 AU AU2003268251A patent/AU2003268251A1/en not_active Abandoned
- 2003-08-28 KR KR1020057003454A patent/KR100626933B1/en active IP Right Grant
- 2003-08-28 CN CNB038245078A patent/CN100483546C/en not_active Expired - Lifetime
- 2003-08-28 EP EP10075616A patent/EP2293305B1/en not_active Expired - Lifetime
- 2003-08-29 TW TW092123963A patent/TWI263221B/en not_active IP Right Cessation
-
2005
- 2005-11-28 US US11/287,488 patent/US7307908B2/en not_active Expired - Lifetime
-
2007
- 2007-05-30 US US11/806,216 patent/US7564731B2/en not_active Expired - Lifetime
-
2009
- 2009-06-22 US US12/488,817 patent/US7768861B2/en not_active Expired - Lifetime
-
2010
- 2010-06-28 US US12/824,931 patent/US7944768B2/en not_active Expired - Fee Related
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4625296A (en) * | 1984-01-17 | 1986-11-25 | The Perkin-Elmer Corporation | Memory refresh circuit with varying system transparency |
EP0156722A1 (en) * | 1984-03-16 | 1985-10-02 | Artus, Société Anonyme | Microprocessor and dynamic RAM system with software refreshment, application to a disturbance recorder |
US5148546A (en) * | 1991-04-22 | 1992-09-15 | Blodgett Greg A | Method and system for minimizing power demands on portable computers and the like by refreshing selected dram cells |
JPH0512094A (en) * | 1991-07-05 | 1993-01-22 | Shimadzu Corp | Transaction managing device |
US5574684A (en) * | 1995-01-09 | 1996-11-12 | Mitsubishi Electric Semiconductor Software Co., Ltd. | Flash memory having data refresh function and data refresh method of flash memory |
US6166959A (en) * | 1998-09-17 | 2000-12-26 | Atmel Corporation | Flash memory array with internal refresh |
WO2001086400A1 (en) * | 2000-05-10 | 2001-11-15 | Elan Research | Software control of dram refresh to reduce power consumption in a data processing system |
Non-Patent Citations (1)
Title |
---|
PATENT ABSTRACTS OF JAPAN vol. 1998, no. 04 31 March 1998 (1998-03-31) * |
Also Published As
Publication number | Publication date |
---|---|
EP1540657B1 (en) | 2011-07-20 |
US7768861B2 (en) | 2010-08-03 |
TW200416735A (en) | 2004-09-01 |
EP2293305A1 (en) | 2011-03-09 |
US7564731B2 (en) | 2009-07-21 |
US20100262791A1 (en) | 2010-10-14 |
US20040044841A1 (en) | 2004-03-04 |
US20070258308A1 (en) | 2007-11-08 |
CN100483546C (en) | 2009-04-29 |
JP4891544B2 (en) | 2012-03-07 |
ATE557398T1 (en) | 2012-05-15 |
US7307908B2 (en) | 2007-12-11 |
AU2003268251A1 (en) | 2004-03-19 |
EP2293305B1 (en) | 2012-05-09 |
TWI263221B (en) | 2006-10-01 |
KR20050057034A (en) | 2005-06-16 |
EP1540657A2 (en) | 2005-06-15 |
JP2005537598A (en) | 2005-12-08 |
US20090257299A1 (en) | 2009-10-15 |
ATE517417T1 (en) | 2011-08-15 |
WO2004021359A2 (en) | 2004-03-11 |
US7010644B2 (en) | 2006-03-07 |
US20060104142A1 (en) | 2006-05-18 |
US7944768B2 (en) | 2011-05-17 |
CN1689111A (en) | 2005-10-26 |
KR100626933B1 (en) | 2006-09-20 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
WO2004021359A3 (en) | Software refreshed memory device and method | |
JP6396515B2 (en) | Directed automatic refresh synchronization | |
US5262998A (en) | Dynamic random access memory with operational sleep mode | |
US6094705A (en) | Method and system for selective DRAM refresh to reduce power consumption | |
KR100870478B1 (en) | Method and system for providing independent bank refresh for volatile memories | |
US7712007B2 (en) | Semiconductor memory device having data holding mode using ECC function | |
US7586805B2 (en) | Method and system for providing directed bank refresh for volatile memories | |
JP2617779B2 (en) | Semiconductor memory device | |
US20040027900A1 (en) | Semiconductor memory device and system outputting refresh flag | |
TWI268509B (en) | Method of refreshing a memory device utilizing PASR and piled refresh schemes | |
WO2006058200A3 (en) | Micro-threaded memory | |
JP2006309935A (en) | Self-refresh circuit with optimized power consumption | |
JP2008090904A (en) | Semiconductor memory device and memory system | |
CN109767797A (en) | Pseudo sram and its method of refreshing | |
CN100409365C (en) | Pseudo-static DASD and its data refresh method | |
US7167407B2 (en) | Dynamic semiconductor memory device and power saving mode of operation method of the same | |
US6967886B2 (en) | Pseudo static random access memory and data refresh method thereof | |
KR20050086525A (en) | Information storage device, information storage method, and information storage program | |
US7042786B2 (en) | Memory with adjustable access time | |
JPH03102696A (en) | Refresh controller | |
US7423925B2 (en) | Memory | |
US7113439B2 (en) | Refresh methods for RAM cells featuring high speed access | |
JPS5845692A (en) | Refresh request controlling system | |
JP2001093278A (en) | Semiconductor memory | |
US20030043675A1 (en) | Memory system |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
AK | Designated states |
Kind code of ref document: A2 Designated state(s): AE AG AL AM AT AU AZ BA BB BG BR BY BZ CA CH CN CO CR CU CZ DE DK DM DZ EC EE ES FI GB GD GE GH GM HR HU ID IL IN IS JP KE KG KP KR KZ LC LK LR LS LT LU LV MA MD MG MK MN MW MX MZ NI NO NZ OM PG PH PL PT RO RU SC SD SE SG SK SL SY TJ TM TN TR TT TZ UA UG UZ VC VN YU ZA ZM ZW |
|
AL | Designated countries for regional patents |
Kind code of ref document: A2 Designated state(s): GH GM KE LS MW MZ SD SL SZ TZ UG ZM ZW AM AZ BY KG KZ MD RU TJ TM AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IT LU MC NL PT RO SE SI SK TR BF BJ CF CG CI CM GA GN GQ GW ML MR NE SN TD TG |
|
121 | Ep: the epo has been informed by wipo that ep was designated in this application | ||
WWE | Wipo information: entry into national phase |
Ref document number: 1020057003454 Country of ref document: KR Ref document number: 2004531891 Country of ref document: JP |
|
WWE | Wipo information: entry into national phase |
Ref document number: 2003749204 Country of ref document: EP |
|
WWE | Wipo information: entry into national phase |
Ref document number: 20038245078 Country of ref document: CN |
|
WWP | Wipo information: published in national office |
Ref document number: 2003749204 Country of ref document: EP |
|
WWP | Wipo information: published in national office |
Ref document number: 1020057003454 Country of ref document: KR |