WO2004017388A3 - Lithographic template and method of formation - Google Patents

Lithographic template and method of formation Download PDF

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Publication number
WO2004017388A3
WO2004017388A3 PCT/US2003/022559 US0322559W WO2004017388A3 WO 2004017388 A3 WO2004017388 A3 WO 2004017388A3 US 0322559 W US0322559 W US 0322559W WO 2004017388 A3 WO2004017388 A3 WO 2004017388A3
Authority
WO
WIPO (PCT)
Prior art keywords
template
sensitive material
devices
radiation sensitive
pattern
Prior art date
Application number
PCT/US2003/022559
Other languages
French (fr)
Other versions
WO2004017388A2 (en
Inventor
Albert Alec Talin
Jeffrey H Baker
William J Dauksher
Andy Hooper
Douglas J Resnick
Original Assignee
Motorola Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Motorola Inc filed Critical Motorola Inc
Priority to AU2003256620A priority Critical patent/AU2003256620A1/en
Publication of WO2004017388A2 publication Critical patent/WO2004017388A2/en
Publication of WO2004017388A3 publication Critical patent/WO2004017388A3/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08—Oxides
    • C23C14/086—Oxides of zinc, germanium, cadmium, indium, tin, thallium or bismuth
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0002—Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0017—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor for the production of embossing, cutting or similar devices; for the production of casting means
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/093—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antistatic means, e.g. for charge depletion

Abstract

This invention relates to semiconductor devices, microelectronic devices, micro electro mechanical devices, microfluidic devices, photonic devices, and more particularly to a lithographic template having a substrate (12), a transparent conductive layer (16) formed on a surface (14) of the substrate (12) by low pressure sputtering to a thickness that allows for preferably 90% transmission of ultraviolet light therethrough, and a patterning layer (20) formed on a surface (18) of the transparent conductive layer (16). The template (10) is used in the fabrication of a semiconductor device (30) for affecting a pattern in device (30) by positioning the template (10) in close proximity to semiconductor device (30) having a radiation sensitive material formed thereon and applying a pressure to cause the radiation sensitive material to flow into the relief image present on the template. Radiation is then applied through the template so as to cure portions of the radiation sensitive material and define the pattern in the radiation sensitive material.
PCT/US2003/022559 2002-08-15 2003-07-18 Lithographic template and method of formation WO2004017388A2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
AU2003256620A AU2003256620A1 (en) 2002-08-15 2003-07-18 Lithographic template and method of formation

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/222,734 US7083880B2 (en) 2002-08-15 2002-08-15 Lithographic template and method of formation and use
US10/222,734 2002-08-15

Publications (2)

Publication Number Publication Date
WO2004017388A2 WO2004017388A2 (en) 2004-02-26
WO2004017388A3 true WO2004017388A3 (en) 2004-08-12

Family

ID=31715050

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2003/022559 WO2004017388A2 (en) 2002-08-15 2003-07-18 Lithographic template and method of formation

Country Status (3)

Country Link
US (2) US7083880B2 (en)
AU (1) AU2003256620A1 (en)
WO (1) WO2004017388A2 (en)

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US6852454B2 (en) * 2002-06-18 2005-02-08 Freescale Semiconductor, Inc. Multi-tiered lithographic template and method of formation and use
US20060193532A1 (en) * 2005-02-25 2006-08-31 William Roberts Optimizing focal plane fitting functions for an image field on a substrate
US7771917B2 (en) * 2005-06-17 2010-08-10 Micron Technology, Inc. Methods of making templates for use in imprint lithography
JP4262267B2 (en) * 2005-09-06 2009-05-13 キヤノン株式会社 MOLD, IMPRINT APPARATUS AND DEVICE MANUFACTURING METHOD
JP2009523312A (en) * 2005-09-07 2009-06-18 トッパン、フォウタマスクス、インク Photomask for manufacturing dual damascene structure and method of forming the same
US7968253B2 (en) 2006-06-20 2011-06-28 Samsung Electronics Co., Ltd. Nano imprint master and method of manufacturing the same
KR100785035B1 (en) 2006-12-11 2007-12-12 삼성전자주식회사 Nano imprint master and manufacturing method thereof
US7883835B2 (en) * 2006-09-22 2011-02-08 Tokyo Electron Limited Method for double patterning a thin film
US7811747B2 (en) * 2006-09-22 2010-10-12 Tokyo Electron Limited Method of patterning an anti-reflective coating by partial developing
US7858293B2 (en) * 2006-09-22 2010-12-28 Tokyo Electron Limited Method for double imaging a developable anti-reflective coating
US7862985B2 (en) * 2006-09-22 2011-01-04 Tokyo Electron Limited Method for double patterning a developable anti-reflective coating
JP2008091782A (en) * 2006-10-04 2008-04-17 Toshiba Corp Pattern forming template, pattern forming method and nano-imprinter
US7767386B2 (en) * 2007-01-15 2010-08-03 Tokyo Electron Limited Method of patterning an organic planarization layer
US7932017B2 (en) * 2007-01-15 2011-04-26 Tokyo Electron Limited Method of double patterning a thin film using a developable anti-reflective coating and a developable organic planarization layer
JP4982213B2 (en) * 2007-03-12 2012-07-25 株式会社日立ハイテクノロジーズ Defect inspection apparatus and defect inspection method
US20090004319A1 (en) * 2007-05-30 2009-01-01 Molecular Imprints, Inc. Template Having a Silicon Nitride, Silicon Carbide or Silicon Oxynitride Film
US7836420B2 (en) * 2007-10-22 2010-11-16 Chartered Semiconductor Manufacturing Ltd. Integrated circuit system with assist feature
US8114331B2 (en) * 2008-01-02 2012-02-14 International Business Machines Corporation Amorphous oxide release layers for imprint lithography, and method of use
US8029716B2 (en) * 2008-02-01 2011-10-04 International Business Machines Corporation Amorphous nitride release layers for imprint lithography, and method of use
US20090200266A1 (en) * 2008-02-08 2009-08-13 Molecular Imprints, Inc. Template Pillar Formation
DE102008019665A1 (en) * 2008-04-18 2009-10-22 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Transparent barrier layer system
JP2010027743A (en) * 2008-07-16 2010-02-04 Ebara Corp Glass substrate for imprint, resist pattern forming method, and method and apparatus for inspecting glass substrate for imprint
JP4609562B2 (en) * 2008-09-10 2011-01-12 日立電線株式会社 Stamper for fine structure transfer and manufacturing method thereof
KR101343570B1 (en) * 2008-12-18 2013-12-20 한국전자통신연구원 Thin Film Transistor Using Boron-Doped Oxide Semiconductor Thin Film and Method for Preparing the Same
CN101900936A (en) * 2009-05-26 2010-12-01 鸿富锦精密工业（深圳）有限公司 Impression mould and production method thereof
DE102010027070A1 (en) * 2010-07-13 2012-01-19 Eberhard-Karls-Universität Tübingen Gas sensor and method for its production
KR20140076357A (en) * 2012-12-12 2014-06-20 삼성전자주식회사 Nanoimprint stamp having high contrast alignment mark and method of fabricating the same
US9928727B2 (en) 2015-07-28 2018-03-27 Carrier Corporation Flame detectors
US9865766B2 (en) 2015-07-28 2018-01-09 Carrier Corporation Ultraviolet photodetectors and methods of making ultraviolet photodetectors
US9806125B2 (en) 2015-07-28 2017-10-31 Carrier Corporation Compositionally graded photodetectors
US10126165B2 (en) 2015-07-28 2018-11-13 Carrier Corporation Radiation sensors
CN106935668A (en) * 2015-12-30 2017-07-07 中国建材国际工程集团有限公司 Transparency conducting layer stacking and its manufacture method comprising pattern metal functional layer
CN109683445A (en) * 2019-01-10 2019-04-26 京东方科技集团股份有限公司 A kind of joining method of nano-pattern, nano impression plate, grating and production method
WO2021174426A1 (en) * 2020-03-03 2021-09-10 安徽精卓光显技术有限责任公司 Antenna and manufacturing method therefor, and electronic device
CN112301317B (en) * 2020-10-30 2021-05-18 连云港恒顺工业科技有限公司 Surface treatment process for claw type vacuum pump rotor

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US6004699A (en) * 1997-02-28 1999-12-21 Nec Corporation Photomask used for projection exposure with phase shifted auxiliary pattern
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Also Published As

Publication number Publication date
US20040033424A1 (en) 2004-02-19
AU2003256620A1 (en) 2004-03-03
AU2003256620A8 (en) 2004-03-03
WO2004017388A2 (en) 2004-02-26
US7432024B2 (en) 2008-10-07
US7083880B2 (en) 2006-08-01
US20060222968A1 (en) 2006-10-05

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