WO2004015736A3 - Low loss rf bias electrode for a plasma reactor with enhanced wafer edge rf coupling and highly efficient wafer cooling - Google Patents

Low loss rf bias electrode for a plasma reactor with enhanced wafer edge rf coupling and highly efficient wafer cooling Download PDF

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Publication number
WO2004015736A3
WO2004015736A3 PCT/US2003/025268 US0325268W WO2004015736A3 WO 2004015736 A3 WO2004015736 A3 WO 2004015736A3 US 0325268 W US0325268 W US 0325268W WO 2004015736 A3 WO2004015736 A3 WO 2004015736A3
Authority
WO
WIPO (PCT)
Prior art keywords
wafer
diameter
inner conductor
vacuum chamber
hollow cylindrical
Prior art date
Application number
PCT/US2003/025268
Other languages
French (fr)
Other versions
WO2004015736A2 (en
Inventor
Hiroji Hanawa
Andrew Nguyen
Kartik Ramaswamy
Kenneth S Collins
Gonzalo Antonio Monroy
Bryan Y Pu
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Publication of WO2004015736A2 publication Critical patent/WO2004015736A2/en
Publication of WO2004015736A3 publication Critical patent/WO2004015736A3/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67109—Apparatus for thermal treatment mainly by convection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32697—Electrostatic control
    • H01J37/32706—Polarising the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H01J37/32724—Temperature
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67069—Apparatus for fluid treatment for etching for drying etching

Abstract

A plasma reactor for processing a semiconductor wafer (130) having a wafer diameter within a vacuum chamber (100) of the reactor has a wafer support (135) pedestal in the vacuum chamber extending upwardly from a floor (115) of the vacuum chamber. The wafer support pedestal includes a top layer (205) having a generally planar surface (205a) for supporting the wafer, the top layer having a diameter on the order of the wafer diameter. A conductive base (215, 220) underlies and supports the top layer, the conductive base having a diameter at least as great as the wafer diameter. An RF power output terminal below the floor of the vacuum chamber transmits power through an elongate inner conductor (230) within and generally parallel to an axis of the wafer support pedestal, the elongate inner conductor having a bottom end connected to the RF power output terminal and a top end terminated at the conductive base. A hollow cylindrical outer conductor (285) coaxial with the inner conductor has a diameter less than the diameter of the hollow cylindrical liner wall and is separated from the elongate inner conductor by a coaxial gap. A conductive upper ground plane annulus (290) is generally coaxial with the inner and outer conductors and located in a plane near the top end of the inner conductor, the conductive upper ground plane annulus having an inner edge connected to the hollow cylindrical outer conductor and an outer edge coupled to a ground potential.
PCT/US2003/025268 2002-08-12 2003-08-11 Low loss rf bias electrode for a plasma reactor with enhanced wafer edge rf coupling and highly efficient wafer cooling WO2004015736A2 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/218,179 2002-08-12
US10/218,179 US20040027781A1 (en) 2002-08-12 2002-08-12 Low loss RF bias electrode for a plasma reactor with enhanced wafer edge RF coupling and highly efficient wafer cooling

Publications (2)

Publication Number Publication Date
WO2004015736A2 WO2004015736A2 (en) 2004-02-19
WO2004015736A3 true WO2004015736A3 (en) 2004-10-14

Family

ID=31495257

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2003/025268 WO2004015736A2 (en) 2002-08-12 2003-08-11 Low loss rf bias electrode for a plasma reactor with enhanced wafer edge rf coupling and highly efficient wafer cooling

Country Status (3)

Country Link
US (1) US20040027781A1 (en)
TW (1) TW200408000A (en)
WO (1) WO2004015736A2 (en)

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KR102068853B1 (en) * 2011-11-23 2020-01-22 램 리써치 코포레이션 Peripheral rf feed and symmetric rf return with rf strap input
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CN103369810B (en) * 2012-03-31 2016-02-10 中微半导体设备(上海)有限公司 A kind of plasma reactor
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Also Published As

Publication number Publication date
WO2004015736A2 (en) 2004-02-19
TW200408000A (en) 2004-05-16
US20040027781A1 (en) 2004-02-12

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