WO2004013661A3 - Methods and apparatus for preparing specimens for microscopy - Google Patents
Methods and apparatus for preparing specimens for microscopy Download PDFInfo
- Publication number
- WO2004013661A3 WO2004013661A3 PCT/US2003/024224 US0324224W WO2004013661A3 WO 2004013661 A3 WO2004013661 A3 WO 2004013661A3 US 0324224 W US0324224 W US 0324224W WO 2004013661 A3 WO2004013661 A3 WO 2004013661A3
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- specimen
- microscopy
- methods
- preparing specimens
- ion beam
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N1/00—Sampling; Preparing specimens for investigation
- G01N1/28—Preparing specimens for investigation including physical details of (bio-)chemical methods covered elsewhere, e.g. G01N33/50, C12Q
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N1/00—Sampling; Preparing specimens for investigation
- G01N1/28—Preparing specimens for investigation including physical details of (bio-)chemical methods covered elsewhere, e.g. G01N33/50, C12Q
- G01N1/32—Polishing; Etching
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B11/00—Measuring arrangements characterised by the use of optical techniques
- G01B11/14—Measuring arrangements characterised by the use of optical techniques for measuring distance or clearance between spaced objects or spaced apertures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/18—Vacuum locks ; Means for obtaining or maintaining the desired pressure within the vessel
- H01J37/185—Means for transferring objects between different enclosures of different pressure or atmosphere
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/20—Means for supporting or positioning the objects or the material; Means for adjusting diaphragms or lenses associated with the support
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/305—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating or etching
- H01J37/3053—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating or etching for evaporating or etching
- H01J37/3056—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating or etching for evaporating or etching for microworking, e.g. etching of gratings, trimming of electrical components
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/18—Vacuum control means
- H01J2237/182—Obtaining or maintaining desired pressure
- H01J2237/1825—Evacuating means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/30—Electron or ion beam tubes for processing objects
- H01J2237/317—Processing objects on a microscale
- H01J2237/3174—Etching microareas
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/335—Cleaning
Abstract
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP03767095A EP1585999A4 (en) | 2002-08-02 | 2003-08-01 | Methods and apparatus for preparing specimens for microscopy |
AU2003261342A AU2003261342A1 (en) | 2002-08-02 | 2003-08-01 | Methods and apparatus for preparing specimens for microscopy |
JP2004526344A JP2006509999A (en) | 2002-08-02 | 2003-08-01 | Microscope sample preparation method and apparatus |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US40093202P | 2002-08-02 | 2002-08-02 | |
US60/400,932 | 2002-08-02 |
Publications (2)
Publication Number | Publication Date |
---|---|
WO2004013661A2 WO2004013661A2 (en) | 2004-02-12 |
WO2004013661A3 true WO2004013661A3 (en) | 2006-10-05 |
Family
ID=31495904
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US2003/024224 WO2004013661A2 (en) | 2002-08-02 | 2003-08-01 | Methods and apparatus for preparing specimens for microscopy |
Country Status (5)
Country | Link |
---|---|
US (3) | US8679307B2 (en) |
EP (1) | EP1585999A4 (en) |
JP (1) | JP2006509999A (en) |
AU (1) | AU2003261342A1 (en) |
WO (1) | WO2004013661A2 (en) |
Families Citing this family (139)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6967340B2 (en) * | 2003-08-19 | 2005-11-22 | Alps Electric Co., Ltd. | Ion beam irradiation device and operating method thereof |
JP2005071543A (en) * | 2003-08-27 | 2005-03-17 | Tdk Corp | Manufacturing method of magnetic recording medium |
US7241361B2 (en) * | 2004-02-20 | 2007-07-10 | Fei Company | Magnetically enhanced, inductively coupled plasma source for a focused ion beam system |
JP4008420B2 (en) * | 2004-02-23 | 2007-11-14 | Tdk株式会社 | Method for manufacturing magnetic recording medium |
US7132673B2 (en) * | 2004-07-30 | 2006-11-07 | E.A. Fischione Instruments, Inc. | Device and method for milling of material using ions |
US20060175291A1 (en) * | 2005-02-10 | 2006-08-10 | Hunt John A | Control of process gases in specimen surface treatment system |
US20060175014A1 (en) * | 2005-02-10 | 2006-08-10 | Michael Cox | Specimen surface treatment system |
US20060175013A1 (en) * | 2005-02-10 | 2006-08-10 | Michael Cox | Specimen surface treatment system |
US8008633B2 (en) * | 2007-03-30 | 2011-08-30 | Jeol, Ltd. | Specimen stage-moving device for charged-particle beam system |
US8288737B1 (en) * | 2007-04-23 | 2012-10-16 | South Bay Technology, Inc. | Ion sputter removal from thin microscopy samples with ions extracted from an RF generated plasma |
EP3258536A1 (en) * | 2007-09-19 | 2017-12-20 | Qualcomm Incorporated | Maximizing power yield from wireless power magnetic resonators |
DE102007048559B4 (en) * | 2007-10-09 | 2009-10-01 | Ntg Neue Technologien Gmbh & Co Kg | Device for beam machining of workpieces, ion beam machining system |
JP2009267203A (en) * | 2008-04-28 | 2009-11-12 | Panasonic Corp | Plasma doping apparatus |
JP2010054272A (en) * | 2008-08-27 | 2010-03-11 | National Institute Of Advanced Industrial Science & Technology | Spin polarization scanning electron microscope |
US8844298B2 (en) | 2008-11-18 | 2014-09-30 | S2 Corporation | Vibration reducing sample mount with thermal coupling |
GB0904500D0 (en) | 2009-03-16 | 2009-04-29 | Oxford Instr Superconductivity | Cryofree cooling apparatus and method |
US8307666B2 (en) * | 2009-03-27 | 2012-11-13 | S2 Corporation | Methods and apparatus for providing rotational movement and thermal stability to a cooled sample |
US9460887B2 (en) * | 2009-05-18 | 2016-10-04 | Hermes Microvision, Inc. | Discharging method for charged particle beam imaging |
US8349125B2 (en) | 2009-07-24 | 2013-01-08 | Xei Scientific, Inc. | Cleaning device for transmission electron microscopes |
FR2953213B1 (en) * | 2009-12-01 | 2013-03-29 | Saint Gobain | METHOD FOR ION ABRASION SURFACE STRUCTURING, STRUCTURED SURFACE AND USES |
GB201002645D0 (en) * | 2010-02-17 | 2010-03-31 | Univ Lancaster | Method and apparatus for ion beam polishing |
CN102233698B (en) * | 2010-04-23 | 2014-12-10 | 鸿富锦精密工业(深圳)有限公司 | Surface strengthening matrix and preparation method thereof |
US9324576B2 (en) | 2010-05-27 | 2016-04-26 | Applied Materials, Inc. | Selective etch for silicon films |
US8686379B1 (en) * | 2010-09-07 | 2014-04-01 | Joseph C. Robinson | Method and apparatus for preparing serial planar cross sections |
US10283321B2 (en) | 2011-01-18 | 2019-05-07 | Applied Materials, Inc. | Semiconductor processing system and methods using capacitively coupled plasma |
US8999856B2 (en) | 2011-03-14 | 2015-04-07 | Applied Materials, Inc. | Methods for etch of sin films |
US9064815B2 (en) | 2011-03-14 | 2015-06-23 | Applied Materials, Inc. | Methods for etch of metal and metal-oxide films |
EP2707893B1 (en) * | 2011-05-13 | 2019-01-16 | Fibics Incorporated | Microscopy imaging method and system |
US8716676B2 (en) | 2011-08-04 | 2014-05-06 | Xei Scientific, Inc. | Device to load TEM sample holders into a vacuum chamber |
JP5918999B2 (en) * | 2012-01-06 | 2016-05-18 | 株式会社日立ハイテクノロジーズ | Charged particle beam irradiation apparatus equipped with a vacuum vessel |
US20130250293A1 (en) * | 2012-03-20 | 2013-09-26 | Fei Company | Method and Apparatus for Actively Monitoring an Inductively-Coupled Plasma Ion Source using an Optical Spectrometer |
EP2682760A1 (en) * | 2012-07-05 | 2014-01-08 | Imec | Apparatus and method for atomic force microscopy in controlled atmosphere |
US9267739B2 (en) | 2012-07-18 | 2016-02-23 | Applied Materials, Inc. | Pedestal with multi-zone temperature control and multiple purge capabilities |
US9373517B2 (en) | 2012-08-02 | 2016-06-21 | Applied Materials, Inc. | Semiconductor processing with DC assisted RF power for improved control |
US9132436B2 (en) | 2012-09-21 | 2015-09-15 | Applied Materials, Inc. | Chemical control features in wafer process equipment |
US10473558B2 (en) | 2012-11-13 | 2019-11-12 | Ues, Inc. | Automated high speed metallographic system |
US10256079B2 (en) | 2013-02-08 | 2019-04-09 | Applied Materials, Inc. | Semiconductor processing systems having multiple plasma configurations |
US9362130B2 (en) | 2013-03-01 | 2016-06-07 | Applied Materials, Inc. | Enhanced etching processes using remote plasma sources |
US9773648B2 (en) | 2013-08-30 | 2017-09-26 | Applied Materials, Inc. | Dual discharge modes operation for remote plasma |
US9520303B2 (en) | 2013-11-12 | 2016-12-13 | Applied Materials, Inc. | Aluminum selective etch |
CN103824741A (en) * | 2014-03-14 | 2014-05-28 | 大连交通大学 | High-energy electronic gun |
US9299537B2 (en) | 2014-03-20 | 2016-03-29 | Applied Materials, Inc. | Radial waveguide systems and methods for post-match control of microwaves |
US9903020B2 (en) | 2014-03-31 | 2018-02-27 | Applied Materials, Inc. | Generation of compact alumina passivation layers on aluminum plasma equipment components |
US20150345029A1 (en) * | 2014-05-28 | 2015-12-03 | Applied Materials, Inc. | Metal removal |
US9309598B2 (en) | 2014-05-28 | 2016-04-12 | Applied Materials, Inc. | Oxide and metal removal |
US10731246B2 (en) | 2014-07-28 | 2020-08-04 | Gatan, Inc. | Ion beam sample preparation and coating apparatus and methods |
US9496167B2 (en) | 2014-07-31 | 2016-11-15 | Applied Materials, Inc. | Integrated bit-line airgap formation and gate stack post clean |
US9659753B2 (en) | 2014-08-07 | 2017-05-23 | Applied Materials, Inc. | Grooved insulator to reduce leakage current |
US9613822B2 (en) | 2014-09-25 | 2017-04-04 | Applied Materials, Inc. | Oxide etch selectivity enhancement |
US9355922B2 (en) | 2014-10-14 | 2016-05-31 | Applied Materials, Inc. | Systems and methods for internal surface conditioning in plasma processing equipment |
US9966240B2 (en) | 2014-10-14 | 2018-05-08 | Applied Materials, Inc. | Systems and methods for internal surface conditioning assessment in plasma processing equipment |
WO2016058112A1 (en) * | 2014-10-16 | 2016-04-21 | 北京理加联合科技有限公司 | Apparatus for full-automatic, ultra-low pressure, fractionation-free and non-destructive extraction of water |
JP6331960B2 (en) * | 2014-10-21 | 2018-05-30 | 住友金属鉱山株式会社 | Thin film sample pretreatment method and analysis method |
CN105628978B (en) * | 2014-11-04 | 2018-09-28 | 中国科学院苏州纳米技术与纳米仿生研究所 | Ultrahigh vacuum sample transfer equipment and transfer method |
US11637002B2 (en) | 2014-11-26 | 2023-04-25 | Applied Materials, Inc. | Methods and systems to enhance process uniformity |
US10224210B2 (en) | 2014-12-09 | 2019-03-05 | Applied Materials, Inc. | Plasma processing system with direct outlet toroidal plasma source |
US10573496B2 (en) | 2014-12-09 | 2020-02-25 | Applied Materials, Inc. | Direct outlet toroidal plasma source |
US11257693B2 (en) | 2015-01-09 | 2022-02-22 | Applied Materials, Inc. | Methods and systems to improve pedestal temperature control |
JP2016143528A (en) * | 2015-01-30 | 2016-08-08 | 株式会社日立ハイテクサイエンス | Sample transfer mechanism and vacuum device |
US20160225652A1 (en) | 2015-02-03 | 2016-08-04 | Applied Materials, Inc. | Low temperature chuck for plasma processing systems |
US9728437B2 (en) | 2015-02-03 | 2017-08-08 | Applied Materials, Inc. | High temperature chuck for plasma processing systems |
US9881805B2 (en) | 2015-03-02 | 2018-01-30 | Applied Materials, Inc. | Silicon selective removal |
US9691645B2 (en) | 2015-08-06 | 2017-06-27 | Applied Materials, Inc. | Bolted wafer chuck thermal management systems and methods for wafer processing systems |
US9741593B2 (en) | 2015-08-06 | 2017-08-22 | Applied Materials, Inc. | Thermal management systems and methods for wafer processing systems |
US9349605B1 (en) | 2015-08-07 | 2016-05-24 | Applied Materials, Inc. | Oxide etch selectivity systems and methods |
JP7296726B2 (en) * | 2015-08-17 | 2023-06-23 | アイコール・システムズ・インク | Fluid control system |
US10504700B2 (en) | 2015-08-27 | 2019-12-10 | Applied Materials, Inc. | Plasma etching systems and methods with secondary plasma injection |
US10504754B2 (en) | 2016-05-19 | 2019-12-10 | Applied Materials, Inc. | Systems and methods for improved semiconductor etching and component protection |
US10522371B2 (en) | 2016-05-19 | 2019-12-31 | Applied Materials, Inc. | Systems and methods for improved semiconductor etching and component protection |
EP3249676B1 (en) * | 2016-05-27 | 2018-10-03 | FEI Company | Dual-beam charged-particle microscope with in situ deposition functionality |
US9865484B1 (en) | 2016-06-29 | 2018-01-09 | Applied Materials, Inc. | Selective etch using material modification and RF pulsing |
US10629473B2 (en) | 2016-09-09 | 2020-04-21 | Applied Materials, Inc. | Footing removal for nitride spacer |
US10062575B2 (en) | 2016-09-09 | 2018-08-28 | Applied Materials, Inc. | Poly directional etch by oxidation |
US10546729B2 (en) | 2016-10-04 | 2020-01-28 | Applied Materials, Inc. | Dual-channel showerhead with improved profile |
US9721789B1 (en) | 2016-10-04 | 2017-08-01 | Applied Materials, Inc. | Saving ion-damaged spacers |
US10062585B2 (en) | 2016-10-04 | 2018-08-28 | Applied Materials, Inc. | Oxygen compatible plasma source |
US9934942B1 (en) | 2016-10-04 | 2018-04-03 | Applied Materials, Inc. | Chamber with flow-through source |
US10062579B2 (en) | 2016-10-07 | 2018-08-28 | Applied Materials, Inc. | Selective SiN lateral recess |
US9947549B1 (en) | 2016-10-10 | 2018-04-17 | Applied Materials, Inc. | Cobalt-containing material removal |
EP3535098B1 (en) * | 2016-11-04 | 2024-03-20 | UES, Inc. | Automated high speed metallographic system |
US10163696B2 (en) | 2016-11-11 | 2018-12-25 | Applied Materials, Inc. | Selective cobalt removal for bottom up gapfill |
US9768034B1 (en) | 2016-11-11 | 2017-09-19 | Applied Materials, Inc. | Removal methods for high aspect ratio structures |
US10242908B2 (en) | 2016-11-14 | 2019-03-26 | Applied Materials, Inc. | Airgap formation with damage-free copper |
US10026621B2 (en) | 2016-11-14 | 2018-07-17 | Applied Materials, Inc. | SiN spacer profile patterning |
US10566206B2 (en) | 2016-12-27 | 2020-02-18 | Applied Materials, Inc. | Systems and methods for anisotropic material breakthrough |
US10403507B2 (en) | 2017-02-03 | 2019-09-03 | Applied Materials, Inc. | Shaped etch profile with oxidation |
US10431429B2 (en) | 2017-02-03 | 2019-10-01 | Applied Materials, Inc. | Systems and methods for radial and azimuthal control of plasma uniformity |
US10043684B1 (en) | 2017-02-06 | 2018-08-07 | Applied Materials, Inc. | Self-limiting atomic thermal etching systems and methods |
US10319739B2 (en) | 2017-02-08 | 2019-06-11 | Applied Materials, Inc. | Accommodating imperfectly aligned memory holes |
US10943834B2 (en) | 2017-03-13 | 2021-03-09 | Applied Materials, Inc. | Replacement contact process |
US10319649B2 (en) | 2017-04-11 | 2019-06-11 | Applied Materials, Inc. | Optical emission spectroscopy (OES) for remote plasma monitoring |
US11276559B2 (en) | 2017-05-17 | 2022-03-15 | Applied Materials, Inc. | Semiconductor processing chamber for multiple precursor flow |
US11276590B2 (en) | 2017-05-17 | 2022-03-15 | Applied Materials, Inc. | Multi-zone semiconductor substrate supports |
US10497579B2 (en) | 2017-05-31 | 2019-12-03 | Applied Materials, Inc. | Water-free etching methods |
US10049891B1 (en) | 2017-05-31 | 2018-08-14 | Applied Materials, Inc. | Selective in situ cobalt residue removal |
US10920320B2 (en) | 2017-06-16 | 2021-02-16 | Applied Materials, Inc. | Plasma health determination in semiconductor substrate processing reactors |
JP6811860B2 (en) * | 2017-06-21 | 2021-01-13 | 株式会社日立ハイテク | Charged particle beam device and cleaning method |
US10541246B2 (en) | 2017-06-26 | 2020-01-21 | Applied Materials, Inc. | 3D flash memory cells which discourage cross-cell electrical tunneling |
US10727080B2 (en) | 2017-07-07 | 2020-07-28 | Applied Materials, Inc. | Tantalum-containing material removal |
US10541184B2 (en) | 2017-07-11 | 2020-01-21 | Applied Materials, Inc. | Optical emission spectroscopic techniques for monitoring etching |
US10354889B2 (en) | 2017-07-17 | 2019-07-16 | Applied Materials, Inc. | Non-halogen etching of silicon-containing materials |
US10170336B1 (en) | 2017-08-04 | 2019-01-01 | Applied Materials, Inc. | Methods for anisotropic control of selective silicon removal |
US10043674B1 (en) | 2017-08-04 | 2018-08-07 | Applied Materials, Inc. | Germanium etching systems and methods |
US10297458B2 (en) | 2017-08-07 | 2019-05-21 | Applied Materials, Inc. | Process window widening using coated parts in plasma etch processes |
US10128086B1 (en) | 2017-10-24 | 2018-11-13 | Applied Materials, Inc. | Silicon pretreatment for nitride removal |
US10283324B1 (en) | 2017-10-24 | 2019-05-07 | Applied Materials, Inc. | Oxygen treatment for nitride etching |
US10256112B1 (en) | 2017-12-08 | 2019-04-09 | Applied Materials, Inc. | Selective tungsten removal |
US10903054B2 (en) | 2017-12-19 | 2021-01-26 | Applied Materials, Inc. | Multi-zone gas distribution systems and methods |
US11328909B2 (en) | 2017-12-22 | 2022-05-10 | Applied Materials, Inc. | Chamber conditioning and removal processes |
US10854426B2 (en) | 2018-01-08 | 2020-12-01 | Applied Materials, Inc. | Metal recess for semiconductor structures |
US10964512B2 (en) | 2018-02-15 | 2021-03-30 | Applied Materials, Inc. | Semiconductor processing chamber multistage mixing apparatus and methods |
US10679870B2 (en) | 2018-02-15 | 2020-06-09 | Applied Materials, Inc. | Semiconductor processing chamber multistage mixing apparatus |
TWI766433B (en) | 2018-02-28 | 2022-06-01 | 美商應用材料股份有限公司 | Systems and methods to form airgaps |
US10593560B2 (en) | 2018-03-01 | 2020-03-17 | Applied Materials, Inc. | Magnetic induction plasma source for semiconductor processes and equipment |
US10319600B1 (en) | 2018-03-12 | 2019-06-11 | Applied Materials, Inc. | Thermal silicon etch |
US10497573B2 (en) | 2018-03-13 | 2019-12-03 | Applied Materials, Inc. | Selective atomic layer etching of semiconductor materials |
US10573527B2 (en) | 2018-04-06 | 2020-02-25 | Applied Materials, Inc. | Gas-phase selective etching systems and methods |
US10490406B2 (en) | 2018-04-10 | 2019-11-26 | Appled Materials, Inc. | Systems and methods for material breakthrough |
US10699879B2 (en) | 2018-04-17 | 2020-06-30 | Applied Materials, Inc. | Two piece electrode assembly with gap for plasma control |
US10886137B2 (en) | 2018-04-30 | 2021-01-05 | Applied Materials, Inc. | Selective nitride removal |
JP7011535B2 (en) * | 2018-06-07 | 2022-01-26 | 株式会社日立ハイテク | Stage device and charged particle beam device |
US10872778B2 (en) | 2018-07-06 | 2020-12-22 | Applied Materials, Inc. | Systems and methods utilizing solid-phase etchants |
US10755941B2 (en) | 2018-07-06 | 2020-08-25 | Applied Materials, Inc. | Self-limiting selective etching systems and methods |
US10672642B2 (en) | 2018-07-24 | 2020-06-02 | Applied Materials, Inc. | Systems and methods for pedestal configuration |
US11049755B2 (en) | 2018-09-14 | 2021-06-29 | Applied Materials, Inc. | Semiconductor substrate supports with embedded RF shield |
US10892198B2 (en) | 2018-09-14 | 2021-01-12 | Applied Materials, Inc. | Systems and methods for improved performance in semiconductor processing |
US11062887B2 (en) | 2018-09-17 | 2021-07-13 | Applied Materials, Inc. | High temperature RF heater pedestals |
US11417534B2 (en) | 2018-09-21 | 2022-08-16 | Applied Materials, Inc. | Selective material removal |
US11682560B2 (en) | 2018-10-11 | 2023-06-20 | Applied Materials, Inc. | Systems and methods for hafnium-containing film removal |
US11121002B2 (en) | 2018-10-24 | 2021-09-14 | Applied Materials, Inc. | Systems and methods for etching metals and metal derivatives |
US11271452B2 (en) * | 2018-11-01 | 2022-03-08 | Amber Kinetics, Inc. | Flywheel with bifurcated molecular pump |
US11437242B2 (en) | 2018-11-27 | 2022-09-06 | Applied Materials, Inc. | Selective removal of silicon-containing materials |
US11721527B2 (en) | 2019-01-07 | 2023-08-08 | Applied Materials, Inc. | Processing chamber mixing systems |
US10920319B2 (en) | 2019-01-11 | 2021-02-16 | Applied Materials, Inc. | Ceramic showerheads with conductive electrodes |
US11170973B2 (en) * | 2019-10-09 | 2021-11-09 | Applied Materials, Inc. | Temperature control for insertable target holder for solid dopant materials |
CN111722263B (en) * | 2020-06-15 | 2022-08-23 | 电子科技大学 | Faraday cup design for high-power electron beam spot measurement |
US11854760B2 (en) | 2021-06-21 | 2023-12-26 | Applied Materials, Inc. | Crucible design for liquid metal in an ion source |
CN113984821B (en) * | 2021-12-29 | 2022-03-11 | 中国科学院地质与地球物理研究所 | Nanostructure three-dimensional imaging system and method |
US11658001B1 (en) * | 2022-12-07 | 2023-05-23 | Institute Of Geology And Geophysics, Chinese Academy Of Sciences | Ion beam cutting calibration system and method |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6203620B1 (en) * | 1996-07-10 | 2001-03-20 | Cvc Products Inc | Hermetically-sealed inductively-coupled plasma source structure and method of use |
US6261406B1 (en) * | 1999-01-11 | 2001-07-17 | Lsi Logic Corporation | Confinement device for use in dry etching of substrate surface and method of dry etching a wafer surface |
US20020063054A1 (en) * | 2000-07-27 | 2002-05-30 | Marshall Michael L. | Low temperature cathodic magnetron sputtering |
US6434814B1 (en) * | 1998-12-16 | 2002-08-20 | International Business Machines Corporation | Method of manufacturing a magnetic head including a read head with read track width defining layer that planarizes the write gap layer of a write head |
Family Cites Families (36)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3756939A (en) * | 1971-10-14 | 1973-09-04 | Materials Research Corp | Target mounting device for sequential sputtering |
US3958124A (en) * | 1973-09-17 | 1976-05-18 | Etec Corporation | Method and apparatus for sem specimen coating and transfer |
JPS55500588A (en) * | 1978-08-18 | 1980-09-04 | ||
DE3413001A1 (en) * | 1984-04-06 | 1985-10-17 | Leybold-Heraeus GmbH, 5000 Köln | CATODENSION SYSTEM WITH STATIONS ADDED TOGETHER |
JPH0328756Y2 (en) * | 1986-06-17 | 1991-06-20 | ||
JPS6329507A (en) * | 1986-07-23 | 1988-02-08 | Hitachi Ltd | Electron beam lithography equipment |
US4858556A (en) * | 1986-09-15 | 1989-08-22 | Siebert Jerome F | Method and apparatus for physical vapor deposition of thin films |
JP2650930B2 (en) * | 1987-11-24 | 1997-09-10 | 株式会社日立製作所 | Superlattice device fabrication method |
JPH02174046A (en) * | 1988-12-27 | 1990-07-05 | Hitachi Ltd | Electron microscope and control method for sample fine mover used therefor |
JPH0830260B2 (en) * | 1990-08-22 | 1996-03-27 | アネルバ株式会社 | Vacuum processing equipment |
US5683547A (en) * | 1990-11-21 | 1997-11-04 | Hitachi, Ltd. | Processing method and apparatus using focused energy beam |
JPH0541349A (en) * | 1991-08-07 | 1993-02-19 | Fujitsu Ltd | Charged particle beam aligner and its adjusting method |
JPH06341961A (en) * | 1993-04-29 | 1994-12-13 | Fujitsu Ltd | Detection of fine hole of film and its analyzing method |
JP2697753B2 (en) * | 1993-05-24 | 1998-01-14 | 昭 田中 | Deposition method of metal film by DC glow discharge |
JPH08239765A (en) * | 1995-02-28 | 1996-09-17 | Hitachi Ltd | Multichamber sputtering device |
JPH08335449A (en) * | 1995-06-06 | 1996-12-17 | Kawasaki Steel Corp | Pretreatment method for sample for scanning electron microscope and its device |
JP3529063B2 (en) * | 1995-07-28 | 2004-05-24 | 日本電子株式会社 | Surface analysis device equipped with plasma etching device |
US5633502A (en) * | 1995-08-11 | 1997-05-27 | E. A. Fischione Instruments, Inc. | Plasma processing system for transmission electron microscopy specimens and specimen holders |
JPH0980059A (en) * | 1995-09-11 | 1997-03-28 | Olympus Optical Co Ltd | Scanner system |
JPH09205122A (en) * | 1996-01-29 | 1997-08-05 | Matsushita Electron Corp | Analytic method for semiconductor equipment and analytic equipment |
US5922179A (en) * | 1996-12-20 | 1999-07-13 | Gatan, Inc. | Apparatus for etching and coating sample specimens for microscopic analysis |
US5834371A (en) * | 1997-01-31 | 1998-11-10 | Tokyo Electron Limited | Method and apparatus for preparing and metallizing high aspect ratio silicon semiconductor device contacts to reduce the resistivity thereof |
JP3677968B2 (en) * | 1997-10-01 | 2005-08-03 | 株式会社日立製作所 | Sample analysis method and apparatus |
US6039000A (en) * | 1998-02-11 | 2000-03-21 | Micrion Corporation | Focused particle beam systems and methods using a tilt column |
US20010052392A1 (en) * | 1998-02-25 | 2001-12-20 | Masahiko Nakamura | Multichamber substrate processing apparatus |
JPH11304419A (en) * | 1998-04-17 | 1999-11-05 | Advantest Corp | Adjusting method for sample inspecting device |
US6051113A (en) * | 1998-04-27 | 2000-04-18 | Cvc Products, Inc. | Apparatus and method for multi-target physical-vapor deposition of a multi-layer material structure using target indexing |
JP3132489B2 (en) * | 1998-11-05 | 2001-02-05 | 日本電気株式会社 | Chemical vapor deposition apparatus and thin film deposition method |
JP3517153B2 (en) * | 1999-03-19 | 2004-04-05 | 株式会社真空デバイス | Plasma ion metal deposition equipment |
US6278203B1 (en) * | 1999-11-22 | 2001-08-21 | Nikon Corporation | Cooling structure for a linear motor |
WO2001082355A2 (en) * | 2000-04-25 | 2001-11-01 | Tokyo Electron Limited | Method and apparatus for plasma cleaning of workpieces |
US6190062B1 (en) * | 2000-04-26 | 2001-02-20 | Advanced Micro Devices, Inc. | Cleaning chamber built into SEM for plasma or gaseous phase cleaning |
JP2002090272A (en) * | 2000-09-13 | 2002-03-27 | Hitachi Instruments Service Co Ltd | Pretreatment device for electron microscope |
JP2002167661A (en) * | 2000-11-30 | 2002-06-11 | Anelva Corp | Magnetic multilayered film deposition system |
JP2002195965A (en) * | 2000-12-27 | 2002-07-10 | Matsushita Electric Ind Co Ltd | Auger electron spectroscope analyzing apparatus and analyzing method using the same |
US6419802B1 (en) * | 2001-03-16 | 2002-07-16 | David Alan Baldwin | System and method for controlling deposition thickness by synchronously varying a sputtering rate of a target with respect to a position of a rotating substrate |
-
2003
- 2003-08-01 WO PCT/US2003/024224 patent/WO2004013661A2/en active Application Filing
- 2003-08-01 JP JP2004526344A patent/JP2006509999A/en active Pending
- 2003-08-01 US US10/633,130 patent/US8679307B2/en active Active
- 2003-08-01 EP EP03767095A patent/EP1585999A4/en not_active Withdrawn
- 2003-08-01 AU AU2003261342A patent/AU2003261342A1/en not_active Abandoned
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2013
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-
2014
- 2014-02-18 US US14/183,195 patent/US20140157914A1/en not_active Abandoned
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6203620B1 (en) * | 1996-07-10 | 2001-03-20 | Cvc Products Inc | Hermetically-sealed inductively-coupled plasma source structure and method of use |
US6434814B1 (en) * | 1998-12-16 | 2002-08-20 | International Business Machines Corporation | Method of manufacturing a magnetic head including a read head with read track width defining layer that planarizes the write gap layer of a write head |
US6261406B1 (en) * | 1999-01-11 | 2001-07-17 | Lsi Logic Corporation | Confinement device for use in dry etching of substrate surface and method of dry etching a wafer surface |
US20020063054A1 (en) * | 2000-07-27 | 2002-05-30 | Marshall Michael L. | Low temperature cathodic magnetron sputtering |
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US8679307B2 (en) | 2014-03-25 |
EP1585999A4 (en) | 2008-09-17 |
WO2004013661A2 (en) | 2004-02-12 |
US20140098380A1 (en) | 2014-04-10 |
EP1585999A2 (en) | 2005-10-19 |
AU2003261342A8 (en) | 2004-02-23 |
US20140157914A1 (en) | 2014-06-12 |
JP2006509999A (en) | 2006-03-23 |
US20040108067A1 (en) | 2004-06-10 |
AU2003261342A1 (en) | 2004-02-23 |
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