WO2004013661A3 - Methods and apparatus for preparing specimens for microscopy - Google Patents

Methods and apparatus for preparing specimens for microscopy Download PDF

Info

Publication number
WO2004013661A3
WO2004013661A3 PCT/US2003/024224 US0324224W WO2004013661A3 WO 2004013661 A3 WO2004013661 A3 WO 2004013661A3 US 0324224 W US0324224 W US 0324224W WO 2004013661 A3 WO2004013661 A3 WO 2004013661A3
Authority
WO
WIPO (PCT)
Prior art keywords
specimen
microscopy
methods
preparing specimens
ion beam
Prior art date
Application number
PCT/US2003/024224
Other languages
French (fr)
Other versions
WO2004013661A2 (en
Inventor
Paul E Fischione
Alan C Robins
David W Smith
Rocco R Cerchiara
Joseph M Matesa Jr
Original Assignee
E A Fischione Instr Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by E A Fischione Instr Inc filed Critical E A Fischione Instr Inc
Priority to EP03767095A priority Critical patent/EP1585999A4/en
Priority to AU2003261342A priority patent/AU2003261342A1/en
Priority to JP2004526344A priority patent/JP2006509999A/en
Publication of WO2004013661A2 publication Critical patent/WO2004013661A2/en
Publication of WO2004013661A3 publication Critical patent/WO2004013661A3/en

Links

Classifications

    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N1/00Sampling; Preparing specimens for investigation
    • G01N1/28Preparing specimens for investigation including physical details of (bio-)chemical methods covered elsewhere, e.g. G01N33/50, C12Q
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N1/00Sampling; Preparing specimens for investigation
    • G01N1/28Preparing specimens for investigation including physical details of (bio-)chemical methods covered elsewhere, e.g. G01N33/50, C12Q
    • G01N1/32Polishing; Etching
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01BMEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00Measuring arrangements characterised by the use of optical techniques
    • G01B11/14Measuring arrangements characterised by the use of optical techniques for measuring distance or clearance between spaced objects or spaced apertures
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02Details
    • H01J37/18Vacuum locks ; Means for obtaining or maintaining the desired pressure within the vessel
    • H01J37/185Means for transferring objects between different enclosures of different pressure or atmosphere
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02Details
    • H01J37/20Means for supporting or positioning the objects or the material; Means for adjusting diaphragms or lenses associated with the support
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/305Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating or etching
    • H01J37/3053Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating or etching for evaporating or etching
    • H01J37/3056Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating or etching for evaporating or etching for microworking, e.g. etching of gratings, trimming of electrical components
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32009Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082Radio frequency generated discharge
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/18Vacuum control means
    • H01J2237/182Obtaining or maintaining desired pressure
    • H01J2237/1825Evacuating means
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30Electron or ion beam tubes for processing objects
    • H01J2237/317Processing objects on a microscale
    • H01J2237/3174Etching microareas
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32Processing objects by plasma generation
    • H01J2237/33Processing objects by plasma generation characterised by the type of processing
    • H01J2237/335Cleaning

Abstract

An apparatus for preparing specimens for microscopy including equipment for providing two or more of each of the following specimen processing activities under continuous vacuum condition : plasma cleaning the specimen, ion beam or reactive ion beam etching the specimen, plasma etching the specimen and coating the specimen with a conductive material. Also, an apparatus and method for detecting a position of a surface of the specimen in a processing chamber, wherein the detected position is used to automatically move the specimen to appropriate locations for subsequent processing.
PCT/US2003/024224 2002-08-02 2003-08-01 Methods and apparatus for preparing specimens for microscopy WO2004013661A2 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
EP03767095A EP1585999A4 (en) 2002-08-02 2003-08-01 Methods and apparatus for preparing specimens for microscopy
AU2003261342A AU2003261342A1 (en) 2002-08-02 2003-08-01 Methods and apparatus for preparing specimens for microscopy
JP2004526344A JP2006509999A (en) 2002-08-02 2003-08-01 Microscope sample preparation method and apparatus

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US40093202P 2002-08-02 2002-08-02
US60/400,932 2002-08-02

Publications (2)

Publication Number Publication Date
WO2004013661A2 WO2004013661A2 (en) 2004-02-12
WO2004013661A3 true WO2004013661A3 (en) 2006-10-05

Family

ID=31495904

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2003/024224 WO2004013661A2 (en) 2002-08-02 2003-08-01 Methods and apparatus for preparing specimens for microscopy

Country Status (5)

Country Link
US (3) US8679307B2 (en)
EP (1) EP1585999A4 (en)
JP (1) JP2006509999A (en)
AU (1) AU2003261342A1 (en)
WO (1) WO2004013661A2 (en)

Families Citing this family (139)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6967340B2 (en) * 2003-08-19 2005-11-22 Alps Electric Co., Ltd. Ion beam irradiation device and operating method thereof
JP2005071543A (en) * 2003-08-27 2005-03-17 Tdk Corp Manufacturing method of magnetic recording medium
US7241361B2 (en) * 2004-02-20 2007-07-10 Fei Company Magnetically enhanced, inductively coupled plasma source for a focused ion beam system
JP4008420B2 (en) * 2004-02-23 2007-11-14 Tdk株式会社 Method for manufacturing magnetic recording medium
US7132673B2 (en) * 2004-07-30 2006-11-07 E.A. Fischione Instruments, Inc. Device and method for milling of material using ions
US20060175291A1 (en) * 2005-02-10 2006-08-10 Hunt John A Control of process gases in specimen surface treatment system
US20060175014A1 (en) * 2005-02-10 2006-08-10 Michael Cox Specimen surface treatment system
US20060175013A1 (en) * 2005-02-10 2006-08-10 Michael Cox Specimen surface treatment system
US8008633B2 (en) * 2007-03-30 2011-08-30 Jeol, Ltd. Specimen stage-moving device for charged-particle beam system
US8288737B1 (en) * 2007-04-23 2012-10-16 South Bay Technology, Inc. Ion sputter removal from thin microscopy samples with ions extracted from an RF generated plasma
EP3258536A1 (en) * 2007-09-19 2017-12-20 Qualcomm Incorporated Maximizing power yield from wireless power magnetic resonators
DE102007048559B4 (en) * 2007-10-09 2009-10-01 Ntg Neue Technologien Gmbh & Co Kg Device for beam machining of workpieces, ion beam machining system
JP2009267203A (en) * 2008-04-28 2009-11-12 Panasonic Corp Plasma doping apparatus
JP2010054272A (en) * 2008-08-27 2010-03-11 National Institute Of Advanced Industrial Science & Technology Spin polarization scanning electron microscope
US8844298B2 (en) 2008-11-18 2014-09-30 S2 Corporation Vibration reducing sample mount with thermal coupling
GB0904500D0 (en) 2009-03-16 2009-04-29 Oxford Instr Superconductivity Cryofree cooling apparatus and method
US8307666B2 (en) * 2009-03-27 2012-11-13 S2 Corporation Methods and apparatus for providing rotational movement and thermal stability to a cooled sample
US9460887B2 (en) * 2009-05-18 2016-10-04 Hermes Microvision, Inc. Discharging method for charged particle beam imaging
US8349125B2 (en) 2009-07-24 2013-01-08 Xei Scientific, Inc. Cleaning device for transmission electron microscopes
FR2953213B1 (en) * 2009-12-01 2013-03-29 Saint Gobain METHOD FOR ION ABRASION SURFACE STRUCTURING, STRUCTURED SURFACE AND USES
GB201002645D0 (en) * 2010-02-17 2010-03-31 Univ Lancaster Method and apparatus for ion beam polishing
CN102233698B (en) * 2010-04-23 2014-12-10 鸿富锦精密工业(深圳)有限公司 Surface strengthening matrix and preparation method thereof
US9324576B2 (en) 2010-05-27 2016-04-26 Applied Materials, Inc. Selective etch for silicon films
US8686379B1 (en) * 2010-09-07 2014-04-01 Joseph C. Robinson Method and apparatus for preparing serial planar cross sections
US10283321B2 (en) 2011-01-18 2019-05-07 Applied Materials, Inc. Semiconductor processing system and methods using capacitively coupled plasma
US8999856B2 (en) 2011-03-14 2015-04-07 Applied Materials, Inc. Methods for etch of sin films
US9064815B2 (en) 2011-03-14 2015-06-23 Applied Materials, Inc. Methods for etch of metal and metal-oxide films
EP2707893B1 (en) * 2011-05-13 2019-01-16 Fibics Incorporated Microscopy imaging method and system
US8716676B2 (en) 2011-08-04 2014-05-06 Xei Scientific, Inc. Device to load TEM sample holders into a vacuum chamber
JP5918999B2 (en) * 2012-01-06 2016-05-18 株式会社日立ハイテクノロジーズ Charged particle beam irradiation apparatus equipped with a vacuum vessel
US20130250293A1 (en) * 2012-03-20 2013-09-26 Fei Company Method and Apparatus for Actively Monitoring an Inductively-Coupled Plasma Ion Source using an Optical Spectrometer
EP2682760A1 (en) * 2012-07-05 2014-01-08 Imec Apparatus and method for atomic force microscopy in controlled atmosphere
US9267739B2 (en) 2012-07-18 2016-02-23 Applied Materials, Inc. Pedestal with multi-zone temperature control and multiple purge capabilities
US9373517B2 (en) 2012-08-02 2016-06-21 Applied Materials, Inc. Semiconductor processing with DC assisted RF power for improved control
US9132436B2 (en) 2012-09-21 2015-09-15 Applied Materials, Inc. Chemical control features in wafer process equipment
US10473558B2 (en) 2012-11-13 2019-11-12 Ues, Inc. Automated high speed metallographic system
US10256079B2 (en) 2013-02-08 2019-04-09 Applied Materials, Inc. Semiconductor processing systems having multiple plasma configurations
US9362130B2 (en) 2013-03-01 2016-06-07 Applied Materials, Inc. Enhanced etching processes using remote plasma sources
US9773648B2 (en) 2013-08-30 2017-09-26 Applied Materials, Inc. Dual discharge modes operation for remote plasma
US9520303B2 (en) 2013-11-12 2016-12-13 Applied Materials, Inc. Aluminum selective etch
CN103824741A (en) * 2014-03-14 2014-05-28 大连交通大学 High-energy electronic gun
US9299537B2 (en) 2014-03-20 2016-03-29 Applied Materials, Inc. Radial waveguide systems and methods for post-match control of microwaves
US9903020B2 (en) 2014-03-31 2018-02-27 Applied Materials, Inc. Generation of compact alumina passivation layers on aluminum plasma equipment components
US20150345029A1 (en) * 2014-05-28 2015-12-03 Applied Materials, Inc. Metal removal
US9309598B2 (en) 2014-05-28 2016-04-12 Applied Materials, Inc. Oxide and metal removal
US10731246B2 (en) 2014-07-28 2020-08-04 Gatan, Inc. Ion beam sample preparation and coating apparatus and methods
US9496167B2 (en) 2014-07-31 2016-11-15 Applied Materials, Inc. Integrated bit-line airgap formation and gate stack post clean
US9659753B2 (en) 2014-08-07 2017-05-23 Applied Materials, Inc. Grooved insulator to reduce leakage current
US9613822B2 (en) 2014-09-25 2017-04-04 Applied Materials, Inc. Oxide etch selectivity enhancement
US9355922B2 (en) 2014-10-14 2016-05-31 Applied Materials, Inc. Systems and methods for internal surface conditioning in plasma processing equipment
US9966240B2 (en) 2014-10-14 2018-05-08 Applied Materials, Inc. Systems and methods for internal surface conditioning assessment in plasma processing equipment
WO2016058112A1 (en) * 2014-10-16 2016-04-21 北京理加联合科技有限公司 Apparatus for full-automatic, ultra-low pressure, fractionation-free and non-destructive extraction of water
JP6331960B2 (en) * 2014-10-21 2018-05-30 住友金属鉱山株式会社 Thin film sample pretreatment method and analysis method
CN105628978B (en) * 2014-11-04 2018-09-28 中国科学院苏州纳米技术与纳米仿生研究所 Ultrahigh vacuum sample transfer equipment and transfer method
US11637002B2 (en) 2014-11-26 2023-04-25 Applied Materials, Inc. Methods and systems to enhance process uniformity
US10224210B2 (en) 2014-12-09 2019-03-05 Applied Materials, Inc. Plasma processing system with direct outlet toroidal plasma source
US10573496B2 (en) 2014-12-09 2020-02-25 Applied Materials, Inc. Direct outlet toroidal plasma source
US11257693B2 (en) 2015-01-09 2022-02-22 Applied Materials, Inc. Methods and systems to improve pedestal temperature control
JP2016143528A (en) * 2015-01-30 2016-08-08 株式会社日立ハイテクサイエンス Sample transfer mechanism and vacuum device
US20160225652A1 (en) 2015-02-03 2016-08-04 Applied Materials, Inc. Low temperature chuck for plasma processing systems
US9728437B2 (en) 2015-02-03 2017-08-08 Applied Materials, Inc. High temperature chuck for plasma processing systems
US9881805B2 (en) 2015-03-02 2018-01-30 Applied Materials, Inc. Silicon selective removal
US9691645B2 (en) 2015-08-06 2017-06-27 Applied Materials, Inc. Bolted wafer chuck thermal management systems and methods for wafer processing systems
US9741593B2 (en) 2015-08-06 2017-08-22 Applied Materials, Inc. Thermal management systems and methods for wafer processing systems
US9349605B1 (en) 2015-08-07 2016-05-24 Applied Materials, Inc. Oxide etch selectivity systems and methods
JP7296726B2 (en) * 2015-08-17 2023-06-23 アイコール・システムズ・インク Fluid control system
US10504700B2 (en) 2015-08-27 2019-12-10 Applied Materials, Inc. Plasma etching systems and methods with secondary plasma injection
US10504754B2 (en) 2016-05-19 2019-12-10 Applied Materials, Inc. Systems and methods for improved semiconductor etching and component protection
US10522371B2 (en) 2016-05-19 2019-12-31 Applied Materials, Inc. Systems and methods for improved semiconductor etching and component protection
EP3249676B1 (en) * 2016-05-27 2018-10-03 FEI Company Dual-beam charged-particle microscope with in situ deposition functionality
US9865484B1 (en) 2016-06-29 2018-01-09 Applied Materials, Inc. Selective etch using material modification and RF pulsing
US10629473B2 (en) 2016-09-09 2020-04-21 Applied Materials, Inc. Footing removal for nitride spacer
US10062575B2 (en) 2016-09-09 2018-08-28 Applied Materials, Inc. Poly directional etch by oxidation
US10546729B2 (en) 2016-10-04 2020-01-28 Applied Materials, Inc. Dual-channel showerhead with improved profile
US9721789B1 (en) 2016-10-04 2017-08-01 Applied Materials, Inc. Saving ion-damaged spacers
US10062585B2 (en) 2016-10-04 2018-08-28 Applied Materials, Inc. Oxygen compatible plasma source
US9934942B1 (en) 2016-10-04 2018-04-03 Applied Materials, Inc. Chamber with flow-through source
US10062579B2 (en) 2016-10-07 2018-08-28 Applied Materials, Inc. Selective SiN lateral recess
US9947549B1 (en) 2016-10-10 2018-04-17 Applied Materials, Inc. Cobalt-containing material removal
EP3535098B1 (en) * 2016-11-04 2024-03-20 UES, Inc. Automated high speed metallographic system
US10163696B2 (en) 2016-11-11 2018-12-25 Applied Materials, Inc. Selective cobalt removal for bottom up gapfill
US9768034B1 (en) 2016-11-11 2017-09-19 Applied Materials, Inc. Removal methods for high aspect ratio structures
US10242908B2 (en) 2016-11-14 2019-03-26 Applied Materials, Inc. Airgap formation with damage-free copper
US10026621B2 (en) 2016-11-14 2018-07-17 Applied Materials, Inc. SiN spacer profile patterning
US10566206B2 (en) 2016-12-27 2020-02-18 Applied Materials, Inc. Systems and methods for anisotropic material breakthrough
US10403507B2 (en) 2017-02-03 2019-09-03 Applied Materials, Inc. Shaped etch profile with oxidation
US10431429B2 (en) 2017-02-03 2019-10-01 Applied Materials, Inc. Systems and methods for radial and azimuthal control of plasma uniformity
US10043684B1 (en) 2017-02-06 2018-08-07 Applied Materials, Inc. Self-limiting atomic thermal etching systems and methods
US10319739B2 (en) 2017-02-08 2019-06-11 Applied Materials, Inc. Accommodating imperfectly aligned memory holes
US10943834B2 (en) 2017-03-13 2021-03-09 Applied Materials, Inc. Replacement contact process
US10319649B2 (en) 2017-04-11 2019-06-11 Applied Materials, Inc. Optical emission spectroscopy (OES) for remote plasma monitoring
US11276559B2 (en) 2017-05-17 2022-03-15 Applied Materials, Inc. Semiconductor processing chamber for multiple precursor flow
US11276590B2 (en) 2017-05-17 2022-03-15 Applied Materials, Inc. Multi-zone semiconductor substrate supports
US10497579B2 (en) 2017-05-31 2019-12-03 Applied Materials, Inc. Water-free etching methods
US10049891B1 (en) 2017-05-31 2018-08-14 Applied Materials, Inc. Selective in situ cobalt residue removal
US10920320B2 (en) 2017-06-16 2021-02-16 Applied Materials, Inc. Plasma health determination in semiconductor substrate processing reactors
JP6811860B2 (en) * 2017-06-21 2021-01-13 株式会社日立ハイテク Charged particle beam device and cleaning method
US10541246B2 (en) 2017-06-26 2020-01-21 Applied Materials, Inc. 3D flash memory cells which discourage cross-cell electrical tunneling
US10727080B2 (en) 2017-07-07 2020-07-28 Applied Materials, Inc. Tantalum-containing material removal
US10541184B2 (en) 2017-07-11 2020-01-21 Applied Materials, Inc. Optical emission spectroscopic techniques for monitoring etching
US10354889B2 (en) 2017-07-17 2019-07-16 Applied Materials, Inc. Non-halogen etching of silicon-containing materials
US10170336B1 (en) 2017-08-04 2019-01-01 Applied Materials, Inc. Methods for anisotropic control of selective silicon removal
US10043674B1 (en) 2017-08-04 2018-08-07 Applied Materials, Inc. Germanium etching systems and methods
US10297458B2 (en) 2017-08-07 2019-05-21 Applied Materials, Inc. Process window widening using coated parts in plasma etch processes
US10128086B1 (en) 2017-10-24 2018-11-13 Applied Materials, Inc. Silicon pretreatment for nitride removal
US10283324B1 (en) 2017-10-24 2019-05-07 Applied Materials, Inc. Oxygen treatment for nitride etching
US10256112B1 (en) 2017-12-08 2019-04-09 Applied Materials, Inc. Selective tungsten removal
US10903054B2 (en) 2017-12-19 2021-01-26 Applied Materials, Inc. Multi-zone gas distribution systems and methods
US11328909B2 (en) 2017-12-22 2022-05-10 Applied Materials, Inc. Chamber conditioning and removal processes
US10854426B2 (en) 2018-01-08 2020-12-01 Applied Materials, Inc. Metal recess for semiconductor structures
US10964512B2 (en) 2018-02-15 2021-03-30 Applied Materials, Inc. Semiconductor processing chamber multistage mixing apparatus and methods
US10679870B2 (en) 2018-02-15 2020-06-09 Applied Materials, Inc. Semiconductor processing chamber multistage mixing apparatus
TWI766433B (en) 2018-02-28 2022-06-01 美商應用材料股份有限公司 Systems and methods to form airgaps
US10593560B2 (en) 2018-03-01 2020-03-17 Applied Materials, Inc. Magnetic induction plasma source for semiconductor processes and equipment
US10319600B1 (en) 2018-03-12 2019-06-11 Applied Materials, Inc. Thermal silicon etch
US10497573B2 (en) 2018-03-13 2019-12-03 Applied Materials, Inc. Selective atomic layer etching of semiconductor materials
US10573527B2 (en) 2018-04-06 2020-02-25 Applied Materials, Inc. Gas-phase selective etching systems and methods
US10490406B2 (en) 2018-04-10 2019-11-26 Appled Materials, Inc. Systems and methods for material breakthrough
US10699879B2 (en) 2018-04-17 2020-06-30 Applied Materials, Inc. Two piece electrode assembly with gap for plasma control
US10886137B2 (en) 2018-04-30 2021-01-05 Applied Materials, Inc. Selective nitride removal
JP7011535B2 (en) * 2018-06-07 2022-01-26 株式会社日立ハイテク Stage device and charged particle beam device
US10872778B2 (en) 2018-07-06 2020-12-22 Applied Materials, Inc. Systems and methods utilizing solid-phase etchants
US10755941B2 (en) 2018-07-06 2020-08-25 Applied Materials, Inc. Self-limiting selective etching systems and methods
US10672642B2 (en) 2018-07-24 2020-06-02 Applied Materials, Inc. Systems and methods for pedestal configuration
US11049755B2 (en) 2018-09-14 2021-06-29 Applied Materials, Inc. Semiconductor substrate supports with embedded RF shield
US10892198B2 (en) 2018-09-14 2021-01-12 Applied Materials, Inc. Systems and methods for improved performance in semiconductor processing
US11062887B2 (en) 2018-09-17 2021-07-13 Applied Materials, Inc. High temperature RF heater pedestals
US11417534B2 (en) 2018-09-21 2022-08-16 Applied Materials, Inc. Selective material removal
US11682560B2 (en) 2018-10-11 2023-06-20 Applied Materials, Inc. Systems and methods for hafnium-containing film removal
US11121002B2 (en) 2018-10-24 2021-09-14 Applied Materials, Inc. Systems and methods for etching metals and metal derivatives
US11271452B2 (en) * 2018-11-01 2022-03-08 Amber Kinetics, Inc. Flywheel with bifurcated molecular pump
US11437242B2 (en) 2018-11-27 2022-09-06 Applied Materials, Inc. Selective removal of silicon-containing materials
US11721527B2 (en) 2019-01-07 2023-08-08 Applied Materials, Inc. Processing chamber mixing systems
US10920319B2 (en) 2019-01-11 2021-02-16 Applied Materials, Inc. Ceramic showerheads with conductive electrodes
US11170973B2 (en) * 2019-10-09 2021-11-09 Applied Materials, Inc. Temperature control for insertable target holder for solid dopant materials
CN111722263B (en) * 2020-06-15 2022-08-23 电子科技大学 Faraday cup design for high-power electron beam spot measurement
US11854760B2 (en) 2021-06-21 2023-12-26 Applied Materials, Inc. Crucible design for liquid metal in an ion source
CN113984821B (en) * 2021-12-29 2022-03-11 中国科学院地质与地球物理研究所 Nanostructure three-dimensional imaging system and method
US11658001B1 (en) * 2022-12-07 2023-05-23 Institute Of Geology And Geophysics, Chinese Academy Of Sciences Ion beam cutting calibration system and method

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6203620B1 (en) * 1996-07-10 2001-03-20 Cvc Products Inc Hermetically-sealed inductively-coupled plasma source structure and method of use
US6261406B1 (en) * 1999-01-11 2001-07-17 Lsi Logic Corporation Confinement device for use in dry etching of substrate surface and method of dry etching a wafer surface
US20020063054A1 (en) * 2000-07-27 2002-05-30 Marshall Michael L. Low temperature cathodic magnetron sputtering
US6434814B1 (en) * 1998-12-16 2002-08-20 International Business Machines Corporation Method of manufacturing a magnetic head including a read head with read track width defining layer that planarizes the write gap layer of a write head

Family Cites Families (36)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3756939A (en) * 1971-10-14 1973-09-04 Materials Research Corp Target mounting device for sequential sputtering
US3958124A (en) * 1973-09-17 1976-05-18 Etec Corporation Method and apparatus for sem specimen coating and transfer
JPS55500588A (en) * 1978-08-18 1980-09-04
DE3413001A1 (en) * 1984-04-06 1985-10-17 Leybold-Heraeus GmbH, 5000 Köln CATODENSION SYSTEM WITH STATIONS ADDED TOGETHER
JPH0328756Y2 (en) * 1986-06-17 1991-06-20
JPS6329507A (en) * 1986-07-23 1988-02-08 Hitachi Ltd Electron beam lithography equipment
US4858556A (en) * 1986-09-15 1989-08-22 Siebert Jerome F Method and apparatus for physical vapor deposition of thin films
JP2650930B2 (en) * 1987-11-24 1997-09-10 株式会社日立製作所 Superlattice device fabrication method
JPH02174046A (en) * 1988-12-27 1990-07-05 Hitachi Ltd Electron microscope and control method for sample fine mover used therefor
JPH0830260B2 (en) * 1990-08-22 1996-03-27 アネルバ株式会社 Vacuum processing equipment
US5683547A (en) * 1990-11-21 1997-11-04 Hitachi, Ltd. Processing method and apparatus using focused energy beam
JPH0541349A (en) * 1991-08-07 1993-02-19 Fujitsu Ltd Charged particle beam aligner and its adjusting method
JPH06341961A (en) * 1993-04-29 1994-12-13 Fujitsu Ltd Detection of fine hole of film and its analyzing method
JP2697753B2 (en) * 1993-05-24 1998-01-14 昭 田中 Deposition method of metal film by DC glow discharge
JPH08239765A (en) * 1995-02-28 1996-09-17 Hitachi Ltd Multichamber sputtering device
JPH08335449A (en) * 1995-06-06 1996-12-17 Kawasaki Steel Corp Pretreatment method for sample for scanning electron microscope and its device
JP3529063B2 (en) * 1995-07-28 2004-05-24 日本電子株式会社 Surface analysis device equipped with plasma etching device
US5633502A (en) * 1995-08-11 1997-05-27 E. A. Fischione Instruments, Inc. Plasma processing system for transmission electron microscopy specimens and specimen holders
JPH0980059A (en) * 1995-09-11 1997-03-28 Olympus Optical Co Ltd Scanner system
JPH09205122A (en) * 1996-01-29 1997-08-05 Matsushita Electron Corp Analytic method for semiconductor equipment and analytic equipment
US5922179A (en) * 1996-12-20 1999-07-13 Gatan, Inc. Apparatus for etching and coating sample specimens for microscopic analysis
US5834371A (en) * 1997-01-31 1998-11-10 Tokyo Electron Limited Method and apparatus for preparing and metallizing high aspect ratio silicon semiconductor device contacts to reduce the resistivity thereof
JP3677968B2 (en) * 1997-10-01 2005-08-03 株式会社日立製作所 Sample analysis method and apparatus
US6039000A (en) * 1998-02-11 2000-03-21 Micrion Corporation Focused particle beam systems and methods using a tilt column
US20010052392A1 (en) * 1998-02-25 2001-12-20 Masahiko Nakamura Multichamber substrate processing apparatus
JPH11304419A (en) * 1998-04-17 1999-11-05 Advantest Corp Adjusting method for sample inspecting device
US6051113A (en) * 1998-04-27 2000-04-18 Cvc Products, Inc. Apparatus and method for multi-target physical-vapor deposition of a multi-layer material structure using target indexing
JP3132489B2 (en) * 1998-11-05 2001-02-05 日本電気株式会社 Chemical vapor deposition apparatus and thin film deposition method
JP3517153B2 (en) * 1999-03-19 2004-04-05 株式会社真空デバイス Plasma ion metal deposition equipment
US6278203B1 (en) * 1999-11-22 2001-08-21 Nikon Corporation Cooling structure for a linear motor
WO2001082355A2 (en) * 2000-04-25 2001-11-01 Tokyo Electron Limited Method and apparatus for plasma cleaning of workpieces
US6190062B1 (en) * 2000-04-26 2001-02-20 Advanced Micro Devices, Inc. Cleaning chamber built into SEM for plasma or gaseous phase cleaning
JP2002090272A (en) * 2000-09-13 2002-03-27 Hitachi Instruments Service Co Ltd Pretreatment device for electron microscope
JP2002167661A (en) * 2000-11-30 2002-06-11 Anelva Corp Magnetic multilayered film deposition system
JP2002195965A (en) * 2000-12-27 2002-07-10 Matsushita Electric Ind Co Ltd Auger electron spectroscope analyzing apparatus and analyzing method using the same
US6419802B1 (en) * 2001-03-16 2002-07-16 David Alan Baldwin System and method for controlling deposition thickness by synchronously varying a sputtering rate of a target with respect to a position of a rotating substrate

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6203620B1 (en) * 1996-07-10 2001-03-20 Cvc Products Inc Hermetically-sealed inductively-coupled plasma source structure and method of use
US6434814B1 (en) * 1998-12-16 2002-08-20 International Business Machines Corporation Method of manufacturing a magnetic head including a read head with read track width defining layer that planarizes the write gap layer of a write head
US6261406B1 (en) * 1999-01-11 2001-07-17 Lsi Logic Corporation Confinement device for use in dry etching of substrate surface and method of dry etching a wafer surface
US20020063054A1 (en) * 2000-07-27 2002-05-30 Marshall Michael L. Low temperature cathodic magnetron sputtering

Also Published As

Publication number Publication date
US8679307B2 (en) 2014-03-25
EP1585999A4 (en) 2008-09-17
WO2004013661A2 (en) 2004-02-12
US20140098380A1 (en) 2014-04-10
EP1585999A2 (en) 2005-10-19
AU2003261342A8 (en) 2004-02-23
US20140157914A1 (en) 2014-06-12
JP2006509999A (en) 2006-03-23
US20040108067A1 (en) 2004-06-10
AU2003261342A1 (en) 2004-02-23

Similar Documents

Publication Publication Date Title
WO2004013661A3 (en) Methods and apparatus for preparing specimens for microscopy
WO2002062111A3 (en) Apparatus and method for atmospheric pressure reactive atom plasma processing for surface modification
WO2002082530A3 (en) In-situ thickness measurement for use in semiconductor processing
AU4047500A (en) Reactive ion beam etching method and a thin film head fabricated using the method
TW469534B (en) Plasma processing method and apparatus
GB2444463A (en) Real time target topography during laser processing
WO2006019565A3 (en) Method and system for coating internal surfaces of prefabricated process piping in the field
WO2003096383A3 (en) Cavity shapes for plasma-assisted processing
EP0392134A3 (en) Process for treatment of backside of semiconductor wafer
DE59904066D1 (en) Nanotomographie
WO2006036753A3 (en) Methods and apparatus for tuning a set of plasma processing steps
CA2194323A1 (en) Apparatus and method for plasma processing
WO2007038514A3 (en) Apparatus and method for substrate edge etching
WO2007111837A3 (en) Plasma dielectric etch process including in-situ backside polymer removal for low-dielectric constant material
AU2003260128A1 (en) Plasma apparatus with device for reducing polymer deposition on a substrate and method for reducing polymer deposition
Hubert et al. Etching processes of polytetrafluoroethylene surfaces exposed to He and He–O2 atmospheric post-discharges
WO2008008157A3 (en) Electron induced chemical etching for detecting defects
CN107227444A (en) The preparation method and anti-fingerprint protective film coated article of anti-fingerprint protective film plated film
EP1437424A3 (en) Method and apparatus for smoothing surfaces on an atomic scale
EP1047114A3 (en) A method of detecting the position of a wafer
TW200503062A (en) Surface processing apparatus and method for plasma treatment
Zhou et al. Automatic cell electrorotation measurements: studies of the biological effects of low-frequency magnetic fields and of heat shock
EP0905758A3 (en) Methods for performing planarization and recess etches and apparatus therefor
WO2005013310A3 (en) Method for balancing return currents in plasma processing apparatus
WO2003095941A3 (en) System and method for controlling tube thickness with ultrasound

Legal Events

Date Code Title Description
AK Designated states

Kind code of ref document: A2

Designated state(s): AE AG AL AM AT AU AZ BA BB BG BR BY BZ CA CH CN CO CR CU CZ DE DK DM DZ EC EE ES FI GB GD GE GH GM HR HU ID IL IN IS JP KE KG KP KR KZ LC LK LR LS LT LU LV MA MD MG MK MN MW MX MZ NI NO NZ OM PG PH PL PT RO RU SC SD SE SG SK SL SY TJ TM TN TR TT TZ UA UG UZ VC VN YU ZA ZM ZW

AL Designated countries for regional patents

Kind code of ref document: A2

Designated state(s): GH GM KE LS MW MZ SD SL SZ TZ UG ZM ZW AM AZ BY KG KZ MD RU TJ TM AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IT LU MC NL PT RO SE SI SK TR BF BJ CF CG CI CM GA GN GQ GW ML MR NE SN TD TG

121 Ep: the epo has been informed by wipo that ep was designated in this application
WWE Wipo information: entry into national phase

Ref document number: 2004526344

Country of ref document: JP

WWE Wipo information: entry into national phase

Ref document number: 2003767095

Country of ref document: EP

WWP Wipo information: published in national office

Ref document number: 2003767095

Country of ref document: EP