WO2004003984A1

WO2004003984A1 - Semiconductor producing apparatus

Info

Publication number: WO2004003984A1
Application number: PCT/JP2003/008125
Authority: WO
Inventors: Masahiro Shimizu; Yoshihide Tada; Minoru Yazawa
Original assignee: Tokyo Electron Limited
Priority date: 2002-06-27
Filing date: 2003-06-26
Publication date: 2004-01-08
Also published as: TW200417270A; AU2003243996A1

Abstract

An infrared-ray radiation lamp that is easy to produce and has high heating efficiency. A lamp (10) may be a single end-type halogen lamps, and a ceramic film (14) is formed on the outer surface of a bulb (12). When electric power is applied to the lamp, a filament (16) is conducted and an electromagnetic wave is radiated. The wave has visible light rays or near-infrared rays as a main spectral component at a normal heating temperature, or at a temperature in a range from about 2,000°C to about 3,000°C. The electromagnetic wave radiated from the filament (16) is applied to the ceramic film (14) on the outer surface through the bulb (12). The ceramic film (14) radiates an electromagnetic wave having, as a main spectral component, intermediate-infrared rays with a radiation temperature of several hundred degrees Celsius.

Description

Technical field

The present invention relates to a semiconductor manufacturing apparatus, and more particularly to an infrared radiation lamp mainly emitting mid-infrared radiation and a processing apparatus using mid-infrared radiation for processing a substrate to be processed.

Bright

Background fine technology

Conventionally, in the manufacturing process of semiconductor devices, LCDs (Liquid Crystal Display), etc., a lamp is used as one method of a heat source for heat treatment. The lamp heating method is considered to be particularly advantageous for rapid or short-term heat treatment, since the heating temperature of the lamp by radiant energy rises quickly (temperature rise) after energization and is easy to control.

The most frequently used lamps for such heat treatment are halogen lamps. A halogen lamp consists of a bulb (bulb) made of quartz glass, a tungsten filament housed inside the bulb, and a trace amount of halogen element enclosed with an inert gas, and a filament using a so-called halogen cycle In addition, the valve wall is prevented from blackening as well as being slowed down, and it is characterized by small, inexpensive, and high-quality radiation.

Radiation obtained by the conventional general halogen lamp, visible light having a wavelength of about 0. _38~2. 5 μ ια (about 0. 8 iim below) to near infrared (about 0. 8~2. 5 μαι) As the main spectral component, the spectral emissivity is very small in the mid-infrared wavelength range (about 2.5 to 25 μα) and the far-infrared wavelength range (about 25 m or more). However, in general, mid-infrared rays are more effective for heating a substance than visible or near-infrared rays. For example, glass substrates for LCDs absorb mid-infrared rays (especially 4.0 to 10 / zm) well while transmitting most visible and near infrared rays. In addition, silicon-on-insulator (SO I) substrates, which are recently attracting attention as a new wafer structure, are also visible when the characteristics of insulating films such as SiO ₂ layers become dominant. The absorptivity is larger in the mid-infrared wavelength region than light or near-infrared light. For this reason, it has been considered that the lamp heating method has lower heating efficiency and the resistance heating method is more advantageous for heat treatment of oxides on a glass substrate or an sOI substrate.

The present invention has been made in view of the problems of the prior art as described above, and it is an object of the present invention to provide an infrared radiation lamp having a simple heating and high heating efficiency and a lamp heating type processing apparatus.

Another object of the present invention is to provide a processing apparatus capable of efficiently removing undesired residual water in a processing chamber. Disclosure of the invention

In order to achieve the above object, according to the infrared radiation lamp of the present invention, there is provided a first thermal radiator which emits an electromagnetic wave having a visible light beam and a near infrared ray as a main spectral component by energization. A tube containing a heat radiator, and a coating formed on the outer surface of the tube, and emitting infrared rays whose main spectral component is mid-infrared radiation in response to the electromagnetic waves from the first heat radiator. And a second heat radiator.

In the infrared radiation lamp of the present invention, the energy of an electromagnetic wave whose main spectral component is visible light or near infrared light emitted from the first thermal radiator is given to the second radiator through the bulb, The emitter emits an infrared ray whose mid-infrared is the main spectral component. The peak wavelength and spectral distribution of the mid-infrared radiation can be adjusted by the radiation temperature of the second radiator, that is, the radiation temperature of the first thermal radiator.

In a preferred form of the infrared radiation lamp of the present invention, the first heat radiator is constituted by a filament consisting of tungsten, and an inert gas and a halogen element are enclosed in a tube, and It is possible to use a halogen lamp.

The second heat radiation member is preferably a ceramic, particularly preferably by configuring it ceramics containing oxide Ke I arsenide (Si_〇 ₂₎ and / or alumina (A1 ₂ 0 _3), cracks and contamination problems Emit mid-infrared radiation with high emissivity Can be

In order to achieve the above object, a first processing apparatus of the present invention comprises: a processing chamber for containing a substrate to be processed under a predetermined atmosphere for desired processing; and the substrate in the processing chamber. A support means for supporting the one surface in an exposed state; an infrared radiation lamp of the present invention arranged to irradiate the infrared light to one surface of the substrate supported by the support means; and the support supported by the support means It is provided so as to shut off the atmosphere between the substrate and the infrared radiation lamp, and has a window for transmitting middle infrared radiation.

In the first processing apparatus, the substrate can be heated with high efficiency by using the infrared radiation lamp of the present invention. In this processing apparatus, one form of a preferable lamp heating method is a configuration in which the infrared radiation lamp and the window are provided to face substantially the entire area of the substrate supported by the support means. Alternatively, a configuration used in combination with a resistance heating method, for example, an infrared radiation lamp and a window are provided opposite to the peripheral portion of the substrate supported by the support means, and an infrared radiation lamp or a resistance heating element is provided inside the window. Configuration is also possible.

Also preferably, the window is made of a crystalline material that is transparent to mid-infrared radiation.

It may be configured to have one or more plate-like window members. In this case, in order to improve the infrared transmittance, it is preferable to form a reflection preventing film against mid infrared rays on one side or both sides of the plate-like window member. In addition, it is also preferable that the window has a reticulated frame portion that transmits middle infrared rays, and a plate-like window member is provided at the reticulated opening of the frame portion.

According to a second processing apparatus of the present invention, there is provided a processing chamber for containing a substrate to be processed under a predetermined atmosphere for desired processing, an exhausting means for exhausting the gas in the processing chamber, and moisture in the chamber. The infrared radiation lamp of the present invention emits infrared radiation into the processing chamber for evaporation and removal.

According to a third processing apparatus of the present invention, there is provided a processing chamber for containing a substrate to be processed under a predetermined atmosphere for desired processing, an exhausting means for exhausting the gas in the processing chamber, and moisture in the chamber. And a ceramic heater for emitting an infrared ray mainly composed of mid infrared rays in the processing chamber for evaporation and removal. In the second or third processing apparatus, the residual moisture that is attached to the substrate, the inner wall of the processing chamber, or the like, or floats in the vicinity thereof can be absorbed by the mid-infrared rays and evaporated to be efficiently removed or exhausted. it can. Preferably, the infrared radiation lamp may be configured to emit infrared radiation whose main spectral component is mid infrared radiation toward the vicinity of the surface to be treated of the substrate. Brief description of the drawings

FIG. 1 is a partially sectional schematic front view showing the configuration of an infrared radiation lamp according to one embodiment.

FIG. 2 is a diagram showing the spectral emissivity of a ceramic coating material suitable for the lamp of the embodiment.

FIG. 3 is a diagram for explaining the shift of the spectral distribution in the lamp of the embodiment.

FIG. 4 is a diagram showing the spectral absorptivity of the glass substrate.

FIG. 5 is a diagram showing the spectral absorptivity of the SO O substrate and OPIP Si.

FIG. 6 is a view showing a step response characteristic of lamp temperature in the lamp of the embodiment.

FIG. 7 is a view showing the step response characteristic of the glass substrate temperature by the lamp of the embodiment.

FIG. 8 is a diagram showing voltage characteristics of the lamp of the embodiment.

FIG. 9 is a front view, partly in cross section, showing the configuration of the device according to one embodiment. FIG. 10 is a diagram showing the improvement of the infrared transmittance of the window by the anti-reflection coating in the embodiment of the device.

FIG. 11 is a diagram showing improvement of infrared transmittance of a window by an anti-reflection coating in the embodiment of the device.

FIG. 12 is a view showing an example of the window structure in the embodiment of the invention apparatus.

FIG. 13 is a view showing an example of the window structure in the example embodiment of the device. FIG. 14 is a partially sectional front view showing the configuration of the annealing apparatus according to one embodiment.

FIG. 15 is a view schematically showing a configuration of a CVD device according to an embodiment. FIG. 16 schematically illustrates the configuration of a C V D device according to one embodiment. FIG. 17 is a diagram showing spectral transmittance in the atmosphere. BEST MODE FOR CARRYING OUT THE INVENTION

Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the attached drawings.

FIG. 1 shows the configuration of an infrared radiation lamp according to an embodiment of the present invention. This lamp 10 may be, for example, one using an ordinary single-ended halogen lamp, and a ceramic film 14 is formed on the outer surface of the bulb 12. A small amount of halogen element is enclosed in the valve 12 together with the inert gas, and a filament 16 consisting of tungsten is accommodated. Both ends of the filament 16 are electrically connected to the base 30 via the inner lead wires 18 and 20, the metal foils 22 and 24 of the enclosed portion and the outer lead wires 26 and 28.

The ceramic coating 14 can be formed, for example, by plasma spraying or dipping. In the plasma spraying method, an arc is generated by a spraying apparatus, and an inert gas (A r, H ₂ , N _2, etc.) is supplied to the arc to send ceramic powder into a plasma flow created. By melt-spraying, the ceramic film 14 can be formed on the outer surface of the pulp 12. According to the dip method, the ceramic film 14 can be formed by immersing the pulp 12 in a solution in which the ceramic powder is dissolved in a solvent and pulling it up to dry and solidify the liquid film attached to the surface of the valve 12. Although the coating portion of the ceramic coating 14 on the surface of the valve 12 may normally be all or most of the surface of the valve, it may be limited to a portion of the pulp surface depending on the valve shape, irradiation direction, etc. It is.

Conditions to be possessed as the material of the ceramic coating 14 are that it has excellent bondability with the pulp 12 and that it exhibits high emissivity in the mid-infrared wavelength region. Moreover, in semiconductor manufacturing equipment, it is also desirable that contamination be as low as possible. By the way, the bulb of lamp is generally made of glass, and the bulb of halogen lamp is quartz It is made of glass. The present inventors have revealed that intensive studies by repeated experiments, Si 0 ₂ (oxidation Kei-containing) and / or A1 ₂ 0 ₃ MgO · Si_〇 ₂ For example was ceramics containing (alumina), [alpha] 1 ₂ Omicron ₃ · Cr _{It was found that 2} 0 ₃ , 1 ₂ _{3 3} · Ti 0 ₂ , Al ₂ O ₃ · Si 0 ₂ were coating materials in the direction satisfying the above conditions. That is, these coating materials do not contain alkali metals or heavy metals, and can reduce the problem of metal contamination. In addition, since Si OX ₂ and Al ₂ O ₃ which are also components of pulp 12 are included, they adhere easily to pulp 12 and the difference in coefficient of thermal expansion is small, and peeling and cracking hardly occur. Furthermore, as shown in Fig. 2, high emissivity can be obtained in the mid-infrared wavelength region (about 2.5 to 25 μm).

In FIG. 2, MgO · Si0 ₂ is 0.9 or more emissivity obtained in the wavelength range of from about 5 to 25 / zm, emissivity close to 1.0 in the vicinity of 8 mu m near you Yopi 17 mu m Is obtained. _{_{_{A1 2 0 3 · Cr 2 0}}} 3 is 0.9 or more emissivity obtained in a wavelength region of about 13 xm, 0. 95 or more radiation rate is obtained at a wavelength range of about 6 to 13 win.

A1 _₂ 0 ₃ · Ti0 ₂ is 0.9 or more emissivity obtained in a wavelength region of about 10 mu m, 0. 95 or more radiation rate is obtained in the vicinity of 8 to 9 / im. A1 ₂ 0 ₃ · Si ○ ₂ can achieve an emissivity of 0.95 or more in the wavelength range of about 7 to 10 // m, and even in the wavelength range of 6 to 7 μm or 10 to 25 m, around 0.9 The emissivity of

In the lamp 10 of this embodiment, when power is applied, the filament 16 is energized to have a peak wavelength of relative energy intensity at about 1 to 2 ytzm at a normal heat generation temperature, ie, about 2000 to 3000 ° C. It emits electromagnetic waves with a wavelength range of 38 to 2.5 / m, that is, visible light or near infrared light as the main spectral component. The electromagnetic wave emitted from the filament 16 is applied to the ceramic coating 14 on the outer surface through the pulp 12. In the case of a common halogen lamp, several hundred pipe walls of pulp 12 are used to maintain the halogen cycle. Designed to have a high temperature of C, the number of ceramic coatings 14 is several hundred. It emits electromagnetic waves at a temperature of C. The electromagnetic wave generated by the thermal radiation (secondary radiation) of the ceramic film 14 has, as shown in FIG. That is, according to the Vienna's displacement rule that the wavelength giving a peak of relative energy is inversely proportional to the absolute temperature, the spectral distribution characteristic of primary radiation having a peak wavelength around 1 to 2 / m is For example, when secondary radiation of the ceramic film 14 is performed at 300 ° C., it shifts to a spectral distribution characteristic with a peak wavelength of about 5.1α, and secondary radiation of the ceramic film 14 at 100 ° C., for example It shifts to a spectral distribution characteristic with a peak wavelength of approximately _{7.8 w} m. The peak wavelength is selected or set in the range of about 2.0 to 8.0 / zm according to the radiation temperature of the ceramic film 14 or the radiation temperature of the filament 16, and the wavelength with a relative energy intensity of 50% or more The region can be selected or set in the range of about 1.0 to 12.0 m.

As described above, the infrared rays emitted from the lamp 10 are suitable for use in the heat treatment of various objects to be treated, in particular, a glass substrate and an S O I substrate. As shown in FIGS. 4 and 5, the glass substrate S O I substrate has high absorptivity in the mid-infrared wavelength region, in particular in the wavelength range of 4.0 to 10 // m. Incidentally, in the case of the S O I substrate, as the substrate temperature is raised, the insulating film characteristics of the Box (Buried Oxide) layer appear, and the absorptivity for mid infrared rays becomes high.

However, according to Plank's radiation law, as the radiation temperature of the ceramic film 14 decreases, the absolute value of the radiation energy intensity also decreases, and the radiation emittance or radiation amount for all wavelengths also decreases. However, in the lamp 10 of this embodiment, since the intermediate infrared ray is emitted at a high emissivity as shown in FIG. As shown in FIG. 7, a heating temperature much higher (tens of percent or more) than that of a conventional general halogen lamp (without coating) can be obtained. As can be seen from FIGS. 6 and 7, the heating efficiency is higher when the ceramic film 14 is formed to a film thickness of 200 μm than when it is formed to a film thickness of 1 00 Az m. Become.

Thus, since the lamp 10 of this embodiment radiates mid-infrared rays with high efficiency, the number of lamps used and the power consumption can be reduced in the application to the heat treatment apparatus. In addition, the lamp life can be greatly extended by using the lamp voltage lower than the rated voltage. As shown in Fig. 8, the lamp life of a general halogen lamp is extended by about 2 times when the lamp voltage is used 5% lower than the rated voltage, and about 4 times when the lamp voltage is used 10% lower .

In FIG. 9, heat release is performed as an example of a heat treatment apparatus to which the lamp 10 of this embodiment is applied. Fig. 2 shows the configuration of a launch type device.

This annealing apparatus 32 has a processing chamber 34 which accommodates the substrate A to be taken in and out, and is capable of forming the desired atmosphere (gas, pressure, etc.) for the annealing in the room. In the processing chamber 34, a substrate support means 36 for supporting the substrate A almost horizontally with the back surface exposed is provided. On the side wall or other wall of the processing chamber 34, a gas inlet 38 for introducing a process gas for the funnel and an exhaust port 40 for exhausting the room are provided. A window 42 is airtightly attached to the bottom surface of the processing chamber 34 at such a position and size as to face the entire or entire area of the back surface of the substrate A supported by the substrate support means 36. The window 42 has a function of transmitting mid infrared rays with high transmittance while shielding the atmosphere in the processing chamber 34 from the outside air. The portion except the window 42 of the processing chamber 34 may be composed of, for example, S i C, SUS, A1.

As one example, the window 42 can be composed of only infrared transparent crystal material. Such infrared transparent crystal material, alkali halides (NaF, NaC 1, KC1, KBr, KI, CsBr, Csl), alkaline earth fluorides _{_{(CaF 2, SrF 2, BaF}} 2, MgF 2, PbF 2), the semiconductor (Ge, Si, GaAs, ZnS, ZnSe, CdTe) and infrared transmissive glass (chalcogenide glass such as Ge ₃₃ A s ₁₂ S ₅₅ , Corning 9754) are preferred.

Under the window 42, a large number of infrared radiation lamps 10 are disposed at positions and distribution densities facing the entire area of the substrate A in the processing chamber 34. In this configuration example, a conical reflector 44 is attached to the lamp 10 in order to improve radiation directivity to the substrate A in the processing chamber 34. The infrared ray emitted from the lamp 10 passes through the window 42 and is incident on the back surface of the substrate A to heat the substrate A to a predetermined processing temperature, for example, around 650.degree.

Since this annealing apparatus uses the lamp 10 according to this embodiment, the substrate A can be heated with high heating efficiency. In particular, when the substrate A is a glass substrate or an SOI substrate, lamp heating can be performed with the efficiency significantly improved as described above. When the window 42 is made of the above-described infrared transparent crystal material, the infrared transmittance of the window 42 is increased by applying an anti-reflection coating to one side or both sides thereof to further improve the heating efficiency. Can.

For example, as shown in Figure 10, the infrared transmittance of the ZnSe, Si, Ge substrate, which can be used as an infrared transparent crystal plate for window 42, is about 70% and about 50% respectively without the antireflective coating. If the reflection film coating made of ZnSe (ThF ₄ ), Ge (SiO), Ge (SiO) is applied to both sides of the substrate at about 45%, it is 70 in the wavelength range of about 3. O / zm. It improves to over 100%, especially to around 100% around 3.5 xm.

Also, as shown in Fig. 11, even if the antireflection coating on only one side does not reach the coating on both sides, each infrared transparent crystal plate (examples shown are ZnS, ZnSe, ZnS / ZnSe, Ge) The infrared transmittance of can be greatly improved. FIG. 12 shows another embodiment of the window 42. The window 42 of this embodiment is provided with a mesh frame portion 46 having an outer shell (an example shown is a circular shell corresponding to a semiconductor wafer or an SOI substrate) according to the shape and size of the substrate A to be treated. The infrared transparent crystal plate 48 is provided at the mesh opening of the frame portion 46. A groove 46a extending in the circumferential direction is formed on the inner wall surface forming each mesh opening of the frame 46, and the infrared transparent crystal plate 48 is fitted into the groove 46a through the seal member 50. . The frame portion 46 may be made of an infrared transmitting material excellent in bending stress resistance, for example, a transmitted light ceramic. Is the force mow transmitted light ceramic (sapphire or single crystal alumina) A1 ₂ 0 ₃ are preferred. The infrared transparent crystal plate 48 may be, for example, a BaF ₂ plate or a ZnSe plate coated on both sides with a ZnSe and ThF ₄ coating material as described above.

The shape of the mesh opening of the frame portion 46 can be arbitrarily selected. The example in FIG. 12 is square, but it may be hexagonal or circular as shown in, for example, (A) and (B) in FIG.

Referring to FIG. 14, another embodiment of the funnel device 32 will be described. In this embodiment, the lamp heating method and the resistance heating method are used in combination. For example, the resistive heating method is used as the main heating source, and the lamp heating method is used as the auxiliary heating source. The main heating source is the treatment room 3 The radiation heat is applied to the substrate A from the upper and lower sides by a resistance heating heater 52 having a planar shape slightly smaller than the substrate A provided on the upper side of the substrate 4. The auxiliary heating source has a window 42 attached around the resistance heating heater 52 at the bottom of the processing chamber 34, and an infrared ray from a lamp 10 disposed immediately below the window 42 operates the peripheral portion of the substrate A. Is heated to compensate for the cooling of the peripheral portion of the substrate in the resistance heating method. By adjusting the balance between the resistance heating value of the resistance heating heater 52 and the infrared radiation amount of the lamp 10, the whole or each part of the substrate A can be heated at a uniform temperature.

FIG. 15 schematically shows the configuration of a chemical vapor deposition (CVD) apparatus for depositing a nitride film as another example of a processing apparatus to which the lamp 10 of this embodiment is applied. The CVD apparatus has a mounting table 5 6 for horizontally mounting and supporting the substrate A in a processing chamber 54 configured to be able to put in and out the substrate A and to be sealed, and the mounting table 5 6 A single head 60 is provided to supply a process gas from above the substrate 6 to the substrate A. For example, if you deposited S iN ₄ (silicon nitride film), NH ₃ (ammonia) and S iH ₄ (Monoshira down) is selected as the process gas. Inside the mounting table 56, for example, a resistance heating heater 58 for heating the substrate A is provided. The inside of the processing chamber 54 is evacuated by a vacuum pump (not shown) via the exhaust port 62.

This CVD apparatus comprises an infrared radiation lamp 10 according to the present invention, and preferably emits an intermediate infrared ray from the lamp 10 towards the substrate A on the mounting table 56, preferably in the processing chamber 54. I have to. In the illustrated configuration example, one or more lamps 10 are mounted inward in a substantially horizontal position on the side wall of the processing chamber 54 at a position somewhat higher than the upper surface of the mounting table 56. The emitted infrared radiation irradiates the upper surface (surface to be processed) of the substrate A, and crosses the upper side.

In the strong configuration, the residual moisture near the substrate A generated in the film forming process and further the residual moisture adhering to the inner wall of the processing chamber 54 and the like are effectively evaporated by the action of mid-infrared rays, and It can be removed (discharged). As shown in Fig.17, the moisture in the atmosphere has almost zero transmittance for the wavelength range of about 5.5 to 7.5 / zm, and absorbs mid-infrared rays in such wavelength range well, It has the property of being clean and exhibits similar spectral characteristics in the processing chamber 54 as well. Therefore, the lamp radiation temperature is set so that mid-infrared rays of a large wavelength range (about 5.5 to 7. 3 / zm) of such moisture evaporation (removal) action are emitted from lamp 10 Good.

FIG. 16 shows a modification in which the lamp 10 is replaced with a ceramic heater 64 in the above-mentioned C V D device. Although the ceramic heater 64 is inferior in heating temperature rising speed and radiation directivity after the power is turned on as compared with the lamp 10, it is about 3.0 to 7 at a radiation temperature of 100 ° C. to 600 ° C. Mid-infrared radiation can be emitted with peak wavelength within the 8 μ ι wavelength range. Thus, the same water removing action as described above can be exerted on the substrate 基 and other parts in the processing chamber 54. The moisture removal function according to the present invention is also effective for processes other than nitride film processes, for example, Cu (copper) wiring process.

The present invention is not limited to the above-described embodiment, and various modifications can be made within the scope of the technical idea thereof. For example, although the infrared radiation lamp of the above-described embodiment uses a square lamp, it is also possible to use another type of incandescent lamp. Further, the annealing device and the CVD device in the above-described embodiment are one example, and can be applied to a heat treatment device of any other type or type of the present invention, and further, the object to be processed has a peak wavelength in the mid-infrared wavelength region. It is applicable to any heat treatment to the treatment body. Industrial Applicability

As described above, the present invention is applicable to an infrared radiation lamp that mainly emits mid-infrared radiation and a processing apparatus that uses infrared radiation to process a substrate to be processed, and is suitable for use in manufacturing processes for semiconductor devices, LCDs, etc. It is a thing.

Claims

The scope of the claims

(1) A first thermal radiator that emits an electromagnetic wave whose main spectral component is visible light or near infrared light when energized;

A tube containing the first heat radiator;

A second thermal radiator formed as a film on the outer surface of the tube, and emitting infrared radiation whose main spectral component is mid infrared radiation according to the electromagnetic wave from the first thermal radiator;

Having an infrared radiation lamp.

(2) The infrared radiation lamp according to claim 1, wherein the first heat radiator is made of a filament made of tungsten, and an inert gas and a halogen element are enclosed in the bulb.

(3) The infrared radiation lamp according to claim 1 or 2, wherein the second heat radiator is made of ceramic.

(4) the second infrared radiation lamp according to any one of claims 1 to 3 heat radiator comprises oxidizing Kei element (S i0 _2).

(5) The infrared radiation lamp according to any one of claims 1 to 4, wherein the second heat radiator includes alumina (A1 ₂ 0 ₃ ).

(6) A processing chamber for containing a substrate to be processed under a predetermined atmosphere for desired processing, a supporting means for supporting the substrate with the one surface exposed in the processing chamber, supported by the supporting means The infrared radiation lamp according to any one of claims 1 to 5, arranged to irradiate the infrared radiation on one surface of the substrate, the substrate supported by the supporting means, and the infrared radiation lamp And a window that transmits mid-infrared Processing apparatus having:

(7) The processing apparatus according to claim 6, wherein the infrared radiation lamp and the window are provided to face substantially the entire area of the substrate supported by the support means.

(8) The infrared radiation lamp and the window are provided opposite to the peripheral portion of the substrate supported by the support means, and a resistance heating element is provided inside the infrared radiation lamp or the window. Processing device for recording.

(9) The processing apparatus according to any one of claims 6 to 8, wherein the window has one or a plurality of plate-like window members made of a crystal material that transmits middle infrared rays.

(10) The processing apparatus according to any one of claims 6 to 9, wherein an anti-reflection film for middle infrared rays is formed on one side or both sides of the plate-like window member.

(11) The processing apparatus according to claim 9 or 10, wherein the window has a reticulated frame portion through which mid-infrared rays are filtered, and the plate-like window member is provided in a reticulated opening of the frame portion.

(12) A processing chamber for containing a substrate to be processed under a predetermined atmosphere for desired processing, an exhausting means for exhausting the gas in the processing chamber, and

The infrared radiation lamp according to any one of claims 1 to 5, wherein the infrared radiation is radiated into the processing chamber to evaporate and remove moisture in the chamber.

Processing apparatus having:

(13) The processing apparatus according to claim 12, wherein the infrared radiation lamp emits the infrared radiation toward the vicinity of the processing surface of the substrate.

(14) A processing chamber for containing a substrate to be processed under a predetermined atmosphere for desired processing, an exhausting means for exhausting the gas in the processing chamber, and

A ceramic heater that emits infrared radiation, which mainly contains mid-infrared radiation, into the processing chamber to evaporate and remove moisture in the chamber;

Processing apparatus having:

(15) The processing apparatus according to claim 14, wherein the ceramic heater emits the infrared light toward the vicinity of the processing surface of the substrate.