WO2004001860A1 - Transistor a base permeable en nanotubes et methodes de production - Google Patents

Transistor a base permeable en nanotubes et methodes de production Download PDF

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Publication number
WO2004001860A1
WO2004001860A1 PCT/US2003/019144 US0319144W WO2004001860A1 WO 2004001860 A1 WO2004001860 A1 WO 2004001860A1 US 0319144 W US0319144 W US 0319144W WO 2004001860 A1 WO2004001860 A1 WO 2004001860A1
Authority
WO
WIPO (PCT)
Prior art keywords
nanotube
nanotubes
base
layer
base layer
Prior art date
Application number
PCT/US2003/019144
Other languages
English (en)
Inventor
Bernhard Vogeli
Thomas Rueckes
Brent M. Segal
Original Assignee
Nantero, Inc.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US10/175,586 external-priority patent/US6759693B2/en
Priority claimed from US10/174,889 external-priority patent/US6774052B2/en
Application filed by Nantero, Inc. filed Critical Nantero, Inc.
Priority to EP03761093A priority Critical patent/EP1537605A4/fr
Priority to CA002489827A priority patent/CA2489827A1/fr
Priority to AU2003248713A priority patent/AU2003248713A1/en
Publication of WO2004001860A1 publication Critical patent/WO2004001860A1/fr

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/7722—Field effect transistors using static field induced regions, e.g. SIT, PBT
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having a potential-jump barrier or a surface barrier
    • H10K10/20—Organic diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having a potential-jump barrier or a surface barrier
    • H10K10/40—Organic transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/20—Carbon compounds, e.g. carbon nanotubes or fullerenes
    • H10K85/221—Carbon nanotubes

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Materials Engineering (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Theoretical Computer Science (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Mathematical Physics (AREA)
  • Computer Hardware Design (AREA)
  • Bipolar Transistors (AREA)

Abstract

L'invention concerne un transistor à base perméable (PBT) avec une couche de base (112) comprenant des nanotubes métalliques (110) imbriqués dans un matériau cristallin semi-conducteur. La couche de base à nanotubes sépare les couches d'émetteur (104E) et de collecteur (104C) du matériau semi-conducteur. L'invention concerne aussi un procédé de fabrication d'un transistor à base perméable (PBT). Selon ce procédé, on met en oeuvre un substrat semi-conducteur, que l'on recouvre d'une couche de base sur laquelle on fait croître une couche semi-conductrice. La couche de base comporte des nanotubes métalliques, apportés par croissance ou par dépôt sur le substrat semi-conducteur. La couche de base à nanotubes sépare les couches d'émetteur et de collecteur du matériau semi-conducteur.
PCT/US2003/019144 2002-06-19 2003-06-17 Transistor a base permeable en nanotubes et methodes de production WO2004001860A1 (fr)

Priority Applications (3)

Application Number Priority Date Filing Date Title
EP03761093A EP1537605A4 (fr) 2002-06-19 2003-06-17 Transistor a base permeable en nanotubes et methodes de production
CA002489827A CA2489827A1 (fr) 2002-06-19 2003-06-17 Transistor a base permeable en nanotubes et methodes de production
AU2003248713A AU2003248713A1 (en) 2002-06-19 2003-06-17 Nanotube permeable base transistor and method of making same

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US10/175,586 US6759693B2 (en) 2002-06-19 2002-06-19 Nanotube permeable base transistor
US10/174,889 2002-06-19
US10/174,889 US6774052B2 (en) 2002-06-19 2002-06-19 Method of making nanotube permeable base transistor
US10/175,586 2002-06-19

Publications (1)

Publication Number Publication Date
WO2004001860A1 true WO2004001860A1 (fr) 2003-12-31

Family

ID=30002640

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2003/019144 WO2004001860A1 (fr) 2002-06-19 2003-06-17 Transistor a base permeable en nanotubes et methodes de production

Country Status (4)

Country Link
EP (1) EP1537605A4 (fr)
AU (1) AU2003248713A1 (fr)
CA (1) CA2489827A1 (fr)
WO (1) WO2004001860A1 (fr)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2007089322A2 (fr) * 2005-11-23 2007-08-09 William Marsh Rice University Préparation de transistors en minces films (tft) ou d'étiquettes d'identification par radiofréquence (rfid) ou autres électroniques imprimables à l'aide d'une imprimante à jet d'encre et encres pour nanotubes de carbone
EP1964188A2 (fr) * 2005-09-06 2008-09-03 Nantero, Inc. Nanotubes de carbone pour le transfert sélectif de chaleur à partir d'éléments électroniques

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4378629A (en) 1979-08-10 1983-04-05 Massachusetts Institute Of Technology Semiconductor embedded layer technology including permeable base transistor, fabrication method
WO2001003208A1 (fr) 1999-07-02 2001-01-11 President And Fellows Of Harvard College Dispositifs s nanoscopiques a base de fils, ensembles ainsi formes et procedes de fabrication y relatifs
US6325909B1 (en) 1999-09-24 2001-12-04 The Governing Council Of The University Of Toronto Method of growth of branched carbon nanotubes and devices produced from the branched nanotubes
US6465813B2 (en) * 1998-06-16 2002-10-15 Hyundai Electronics Industries Co., Ltd. Carbon nanotube device
US20030198812A1 (en) 2001-07-25 2003-10-23 Thomas Rueckes Nanotube films and articles
US20030199172A1 (en) 2001-07-25 2003-10-23 Thomas Rueckes Methods of nanotube films and articles

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4378629A (en) 1979-08-10 1983-04-05 Massachusetts Institute Of Technology Semiconductor embedded layer technology including permeable base transistor, fabrication method
US6465813B2 (en) * 1998-06-16 2002-10-15 Hyundai Electronics Industries Co., Ltd. Carbon nanotube device
WO2001003208A1 (fr) 1999-07-02 2001-01-11 President And Fellows Of Harvard College Dispositifs s nanoscopiques a base de fils, ensembles ainsi formes et procedes de fabrication y relatifs
US6325909B1 (en) 1999-09-24 2001-12-04 The Governing Council Of The University Of Toronto Method of growth of branched carbon nanotubes and devices produced from the branched nanotubes
US20030198812A1 (en) 2001-07-25 2003-10-23 Thomas Rueckes Nanotube films and articles
US20030199172A1 (en) 2001-07-25 2003-10-23 Thomas Rueckes Methods of nanotube films and articles

Non-Patent Citations (9)

* Cited by examiner, † Cited by third party
Title
CHICO L ET AL., PHYSICAL REVIEW LETTERS, vol. 76, no. 6, February 1996 (1996-02-01), pages 971 - 974
HSU ET AL., J. APP. PHYS., vol. 69, pages 4282 - 4285
MIYAO ET AL., J. CRYST. GROWTH, vol. 111, 1991, pages 957 - 960
NILSSON ET AL., SOLID STATE ELEC., vol. 42, 1998, pages 297 - 305
PISCH ET AL., J. APP. PHYS., vol. 80, 1996, pages 2742 - 2748
See also references of EP1537605A4
VON KANEL, MAT. SCI. REP., vol. 8, 1992, pages 193 - 269
WERNERSSON ET AL., MAT. SCI.& ENG., vol. B 51, 1998, pages 76 - 80
ZARING ET AL., REP. PROGRESS PHYS., vol. 56, 1993, pages 1397 - 1467

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1964188A2 (fr) * 2005-09-06 2008-09-03 Nantero, Inc. Nanotubes de carbone pour le transfert sélectif de chaleur à partir d'éléments électroniques
EP1964188A4 (fr) * 2005-09-06 2010-06-16 Nantero Inc Nanotubes de carbone pour le transfert sélectif de chaleur à partir d'éléments électroniques
WO2007089322A2 (fr) * 2005-11-23 2007-08-09 William Marsh Rice University Préparation de transistors en minces films (tft) ou d'étiquettes d'identification par radiofréquence (rfid) ou autres électroniques imprimables à l'aide d'une imprimante à jet d'encre et encres pour nanotubes de carbone
WO2007089322A3 (fr) * 2005-11-23 2008-03-06 Univ Rice William M Préparation de transistors en minces films (tft) ou d'étiquettes d'identification par radiofréquence (rfid) ou autres électroniques imprimables à l'aide d'une imprimante à jet d'encre et encres pour nanotubes de carbone
US7821079B2 (en) 2005-11-23 2010-10-26 William Marsh Rice University Preparation of thin film transistors (TFTs) or radio frequency identification (RFID) tags or other printable electronics using ink-jet printer and carbon nanotube inks
US8106430B2 (en) * 2005-11-23 2012-01-31 William Marsh Rice University Preparation of thin film transistors (TFTs) or radio frequency identification (RFID) tags or other printable electronics using ink-jet printer and carbon nanotube inks

Also Published As

Publication number Publication date
CA2489827A1 (fr) 2003-12-31
EP1537605A4 (fr) 2008-03-05
EP1537605A1 (fr) 2005-06-08
AU2003248713A1 (en) 2004-01-06

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