WO2003106952A2 - A micro-mechanical capacitive inductive sensor for wireless detection of relative or absolute pressure - Google Patents
A micro-mechanical capacitive inductive sensor for wireless detection of relative or absolute pressure Download PDFInfo
- Publication number
- WO2003106952A2 WO2003106952A2 PCT/US2003/019121 US0319121W WO03106952A2 WO 2003106952 A2 WO2003106952 A2 WO 2003106952A2 US 0319121 W US0319121 W US 0319121W WO 03106952 A2 WO03106952 A2 WO 03106952A2
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- substrate
- micro
- pressure sensor
- mechanical pressure
- diaphragm
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
- G01L9/0041—Transmitting or indicating the displacement of flexible diaphragms
- G01L9/0072—Transmitting or indicating the displacement of flexible diaphragms using variations in capacitance
- G01L9/0073—Transmitting or indicating the displacement of flexible diaphragms using variations in capacitance using a semiconductive diaphragm
Definitions
- the present invention pertains to the field of pressure sensors, and more specifically to capacitive pressure sensors, remote sensing, and to the fields of micro fabrication and micro electro mechanical systems (MEMS).
- MEMS micro electro mechanical systems
- Pressure sensors made by micro machining methods are well known and considered one of the most mature applications for MEMS technology. Since the early 1970's, pressure sensitive diaphragms have been formed from silicon substrates, the deflection of which have been detected by optical, piezoresistive, piezoelectric or capacitive means. So far, the most significant detection method used for commercial applications has been piezoresistive detection, which is convenient to implement since single crystal silicon is an inherently piezoresistive material. Examples of piezoresistive pressure sensors are disclosed in U.S. Patent Nos. 3,893,228, 3,916,365, 4,203,327, and 4,763,098.
- capacitive detection Another significant method is capacitive detection, which provides for lower transducer noise and better thermal stability, but requires more complex mechanical structures, since the capacitance between the movable diaphragm and a fixed counter electrode must be established. Examples of capacitive pressure transducers are disclosed in U.S. Patent Nos. 4,257,274, 4,881,410, 4,625,561 and 5,936,164.
- An important realization for remote sensing purposes is that capacitive transducer devices do not consume power, as is the case for piezoresistive devices in which a biasing resistor must be used to detect a change in voltage or current. In remote sensing it is desirable to minimize transducer power consumption to reduce the size of the required power source (i.e., battery). If a capacitive transducer is combined with a coil, an LC
- the resonance frequency of the LC circuit may be detected remotely by analyzing the coupling impedance of the LC circuit to a transmitter coil. A pressure induced change of capacitance C in the transducer then leads to a shift in the LC circuit's resonance frequency, which may be detected remotely.
- Wireless pressure transducers based on this approach are disclosed in L. Rosengren et ah, "A system for passive implantable pressure sensors", Sensors & Actuators, vol. A43 (1994), pp. 55-58 and in U.S. Patent No. 6,287,256.
- a prior art wireless pressure sensor 10 is shown in FIG. 1.
- a silicon substrate 2 is etched from both sides to form a recessed diaphragm 3 and cavities 6.
- a planar metal inductor coil 9 is formed with windings 7.
- a fixed counter electrode 5 is formed on glass substrate 1 .
- the silicon substrate 2 and glass substrate 1 are bonded together using anodic bonding methods to form the complete pressure sensor 10.
- the recess at the diaphragm 3 establishes an operational air gap 4 between the diaphragm 3 and the fixed counter electrode 5.
- Q Quality factor
- the quality factor directly influences the precision with which the resonance frequency can be determined by inductive coupling, and therefore, the resolution of the pressure sensor 10.
- the quality factor of the coil there are several limitations that affect the quality factor of the coil.
- the number of windings 7 that can be realized is restricted, since they are placed outside the diaphragm 3 and therefore, add to the overall dimensions of sensor 10.
- the materials used to form the windings 7 of the coil 9 are typically deposited by electroplating to achieve sufficient metal thickness. Electroplated metals are known to have inferior resistivity compared to metals deposited by other means, which therefore results in significant resistive losses in the coil 9.
- an object of the present invention to provide a complete capacitor/inductor pressure sensing structure which has an improved overall resonance quality factor compared to prior art devices.
- the present invention is a micro-mechanical pressure transducer in which a capacitive transducer structure is monolithically integrated with an inductor coil to form a LC tank circuit, the resonant frequency of which may be detected remotely by imposing an electromagnetic field on the transducer.
- the capacitive transducer structure is comprised of a conductive movable diaphragm, a fixed counter electrode, and a predetermined air gap between said diaphragm and electrode.
- the diaphragm deflects in response to an applied pressure differential, leading to a change of capacitance in the structure and hence a shift of resonance frequency of the LC tank circuit.
- the resonance frequency of the LC circuit can be remotely detected by measuring and determining the corresponding peak in electromagnetic impedance of the transducer.
- the present invention is based on the realizations that the physical limitation on the dimensions, and, hence inductance, of a coil is caused by having only one usable plane for the windings of the coil, that if several planes are utilized, the inductance can be scaled correspondingly, and that if the area occupied by a device's movable diaphragm can also be utilized for a coil, additional inductance could be realized.
- LTCC low-temperature co-fired ceramics
- This technology utilizes multi layer stacks of screen printed, or etched, conductors and dielectric foils, to realize complex interconnections of up to 20 layers or more.
- LTCC Low-density dielectric
- the LTTC material must be polished to provide a smooth surface on which thin films of sub-micron thickness can be deposited, and to which a second substrate containing the movable diaphragm can be bonded and hermetically sealed.
- the present invention is comprised of an LTCC substrate, in which a high quality inductor and fixed counter electrode have been formed, and a second substrate in which a pressure sensitive diaphragm has been formed.
- the diaphragm and fixed counter electrode form a pressure sensitive capacitor connected internally to a coil.
- the inductor coil is implemented in several layers in the LTTC substrate directly under the fixed counter electrode and movable diaphragm to reduce the overall size of the device.
- FIG. 1 is a cross-sectional view of a prior art capacitor/inductor pressure sensing structure.
- FIG. 2 is a perspective view of a capacitor/inductor pressure sensing structure according to the present invention.
- FIG. 3 is top plan view of the a capacitor/inductor pressure sensing structure according to the present invention.
- FIG. 4 is a cross-sectional view of a capacitor/inductor pressure sensing structure according to the present invention taken along the section line A-A in FIG.
- FIGS. 5 through FIG. 14 are cross-sectional views of a capacitor/inductor pressure sensing structure according the present invention at different stages of fabrication.
- FIG. 15 is a cross-sectional view of a capacitor/inductor pressure sensing structure according to the present invention with a port to form a differential pressure sensor.
- FIG. 16 is a cross-sectional view of a capacitor/inductor pressure sensing structure according to the present invention in which the air cavity has been sealed in a controlled environment to form an absolute reference pressure sensor.
- the pressure sensing structure 100 consists of a substrate 101, containing a thin diaphragm 106, and a second hybrid substrate 102, in which an electrical inductor 105 has been formed.
- the two substrates 101 and 102 are bonded together and hermetically sealed to form a cavity 109. Any deflection of the diaphragm 106 in response to a pressure differential between the sealed cavity and the exterior atmosphere results in a change of capacitance between a fixed counter electrode 107 and a conductive layer 110 on diaphragm 106.
- Inductor 105 is connected to the fixed electrode 107 by via 111, shown in FIG. 4, and to a conductive layer 110 on diaphragm 106 through via 112 and conductive layer 108.
- the inductor 105 is formed in multi layered hybrid substrate 102.
- a preferred technology for the implementation of inductor 105 is low-temperature co-fired ceramics (LTCC), in which twenty or more conductive layers may be formed. Since the conductors in LTCC technology are relatively thick, it is possible to realize inductors with large inductance values and quality factors (Q).
- LTCC low-temperature co-fired ceramics
- SBU sequentially-build-up
- PCB multi-layer printed circuit boards
- Hybrid substrate 102 consists of multiple layers with spiraling conductors 103 and insulating layers 104. A number of vias 111 and 112 are placed in each insulating layer 104 to connect the spiral conductors 103. Vias 111 and 112 are placed, such that when an electro-magnetic field is imposed perpendicular to the plane of the spiral conductors 103, a unidirectional current is induced in the conductors. This is important to maximize the overall sensitivity of the pressure sensing device 100.
- Device 100 shown in FIG. 2 is an absolute pressure transducer. Device 100 can also be implemented with a port 210, as shown in FIG. 15, to form a differential pressure transducer, or with a reference cavity 200, as shown in FIG. 16, to form an absolute reference pressure transducer.
- FIGS. 5-14 A preferred micro-fabrication process for forming pressure sensing structure 100 according to the present invention is shown in FIGS. 5-14. Fabrication of the first substrate 101 begins from a virgin substrate 101a on which a masking layer 130 is deposited, as shown in FIG. 5. Preferred materials for masking layer 130 include silicon dioxide, silicon nitride, and photoresist. A preferred material for substrate 101a is single crystal silicon. Another material for substrate 101a is silicon on insulator (SOI). Masking layer 130 is patterned on the front 128 of substrate 101a. As shown in FIG. 6, a cavity 109a is etched in substrate 101a. A preferred method for etching cavity 109a is immersion in potassium hydroxide (KOH), or other commonly used anisotropic silicon etchants. which include, but are not limited to, tetramethyl ammonium hydroxide (TMAH), cesium hydroxide (CsOH), and ethylenediamene pyrocatecol (EDP).
- KOH potassium hydroxide
- a second preferred method for the etching of cavity 109a is Deep Reactive Ion Etching (DR-E).
- DR-E Deep Reactive Ion Etching
- masking layer 130 is subsequently removed from the front 128 of substrate 101a and a bulk layer 106a is formed in substrate 101a.
- a preferred method for the formation of bulk layer 106a i ⁇ diffusion of boron into substrate 101a at an elevated temperature.
- a second preferred method for the formation of bulk layer 106a is the use of silicon on insulator (SOI) substrates, in which a bulk layer has been pre-formed.
- SOI silicon on insulator
- Preferred materials for the second masking layer 131 include silicon dioxide, silicon nitride, and photoresist. As seen in FIG. 8, masking layer 131 is patterned on the backside 129 of substrate 101a to form an opening 132a, and substrate 101a is etched to form cavity 132 shown in FIG. 9. The etchant is chosen, such that etching seizes upon exposure of the bulk layer 106a, thereby forming the diaphragm 106. Preferred methods for etching cavity 132 include chemical solutions of potassium hydroxide (KOH) and isopropylalcohol (IP A) and deep reactive ion etching (DRIE). As shown in FIG. 10.
- KOH potassium hydroxide
- IP A isopropylalcohol
- DRIE deep reactive ion etching
- a conductive layer 110 is deposited on the front 128 of substrate 101a to provide for a highly conductive diaphragm 106.
- Conductive layer 110 also serves as a bonding surface to the hybrid substrate 102 in the final device.
- Preferred materials for conductive layer 110 include aluminum, silver, tin, lead, copper, gold, platinum, palladium, nickel, chromium, titanium and alloys thereof.
- Hybrid substrate 102 is readily available with all dielectric layers 104, conductive layers 105, and vias 111 and 112 preformed from manufacturing sources using standard low-temperature co-fired ceramics (LTCC) technology.
- LTCC low-temperature co-fired ceramics
- the surface roughness of standard LTCC substrates is too great for micro-fabrication. Therefore, as shown in FIG. 12, the front 113 of ceramic substrate 102 is first polished to achieve a surface roughness of less than 0.1 micron. During the polishing process, the top ceramic layer and vias are partially removed. Subsequently a thin conductive layer is deposited and patterned on the front 113 of the ceramic substrate 102, forming the fixed counter electrode 107, and bonding area 108 shown in FIG. 13.
- the fixed counter electrode 107 is connected to the buried inductor 105 through polished via 111.
- the diaphragm conductor 110 is connected to the other end of the buried inductor 105 through bonding area 108 and another polished via 112.
- Preferred materials for the conductive layer 114 on the ceramic substrate 102 include aluminum, silver, tin, lead, copper, gold, platinum, palladium, nickel, chromium, titanium and alloys thereof.
- a preferred method for bonding substrates 101 and 102 is eutectic bonding.
- the bonding hermetically seals the cavity 109, thereby forming an absolute pressure sensing device 100.
- a differential pressure sensing structure can be formed by adding an opening in the substrate 101 to provide access to cavity 109. It is possible to form said opening with the same etch process used to form the initial cavity 109a.
- the bonding process can be performed in a controlled atmosphere, in terms of pressure and gas composition, to form a reference cavity for specialized applications.
Abstract
Description
Claims
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
AU2003253656A AU2003253656A1 (en) | 2002-06-18 | 2003-06-18 | A micro-mechanical capacitive inductive sensor for wireless detection of relative or absolute pressure |
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US38929202P | 2002-06-18 | 2002-06-18 | |
US60/389,292 | 2002-06-18 | ||
US10/462,811 US7024936B2 (en) | 2002-06-18 | 2003-06-17 | Micro-mechanical capacitive inductive sensor for wireless detection of relative or absolute pressure |
US10/462,811 | 2003-06-17 |
Publications (2)
Publication Number | Publication Date |
---|---|
WO2003106952A2 true WO2003106952A2 (en) | 2003-12-24 |
WO2003106952A3 WO2003106952A3 (en) | 2005-05-06 |
Family
ID=29740128
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US2003/019121 WO2003106952A2 (en) | 2002-06-18 | 2003-06-18 | A micro-mechanical capacitive inductive sensor for wireless detection of relative or absolute pressure |
Country Status (3)
Country | Link |
---|---|
US (3) | US7024936B2 (en) |
AU (1) | AU2003253656A1 (en) |
WO (1) | WO2003106952A2 (en) |
Cited By (33)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6968744B1 (en) | 2004-10-18 | 2005-11-29 | Silverbrook Research Pty Ltd | Capacitative pressure sensor with close electrodes |
WO2006042357A1 (en) | 2004-10-18 | 2006-04-27 | Silverbrook Research Pty Ltd | Micro-electromechanical pressure sensor |
US7089790B2 (en) | 2004-10-18 | 2006-08-15 | Silverbrook Research Pty Ltd | Pressure sensor with laminated membrane |
US7089797B2 (en) | 2004-10-18 | 2006-08-15 | Silverbrook Research Pty Ltd | Temperature insensitive pressure sensor |
US7089798B2 (en) | 2004-10-18 | 2006-08-15 | Silverbrook Research Pty Ltd | Pressure sensor with thin membrane |
US7093494B2 (en) | 2004-10-18 | 2006-08-22 | Silverbrook Research Pty Ltd | Micro-electromechanical pressure sensor |
US7121145B2 (en) | 2004-10-18 | 2006-10-17 | Silverbrook Research Pty Ltd | Capacitative pressure sensor |
US7124643B2 (en) | 2004-10-18 | 2006-10-24 | Silverbrook Research Pty Ltd | Pressure sensor with non-planar membrane |
US7143652B2 (en) | 2004-10-18 | 2006-12-05 | Silverbrook Research Pty Ltd | Pressure sensor for high acceleration environment |
US7159467B2 (en) | 2004-10-18 | 2007-01-09 | Silverbrook Research Pty Ltd | Pressure sensor with conductive ceramic membrane |
WO2007002225A3 (en) * | 2005-06-21 | 2007-03-22 | Cardiomems Inc | Implantable wireless sensor for in vivo pressure measurement |
US7194901B2 (en) | 2004-10-18 | 2007-03-27 | Silverbrook Research Pty Ltd | Pressure sensor with apertured membrane guard |
US7234357B2 (en) | 2004-10-18 | 2007-06-26 | Silverbrook Research Pty Ltd | Wafer bonded pressure sensor |
US7240560B2 (en) | 2004-10-18 | 2007-07-10 | Silverbrook Research Pty Ltd | Pressure sensor with remote power source |
WO2007002185A3 (en) * | 2005-06-21 | 2008-03-20 | Cardiomems Inc | Method of manufacturing implantable wireless sensor for in vivo pressure measurement |
US7662653B2 (en) | 2005-02-10 | 2010-02-16 | Cardiomems, Inc. | Method of manufacturing a hermetic chamber with electrical feedthroughs |
US8118748B2 (en) | 2005-04-28 | 2012-02-21 | Medtronic, Inc. | Implantable capacitive pressure sensor system and method |
AU2012247061B2 (en) * | 2005-06-21 | 2014-07-17 | Cardiomems, Inc. | Implantable wireless sensor for in vivo pressure measurement |
US8896324B2 (en) | 2003-09-16 | 2014-11-25 | Cardiomems, Inc. | System, apparatus, and method for in-vivo assessment of relative position of an implant |
GB2523266A (en) * | 2014-07-15 | 2015-08-19 | Univ Bristol | Wireless sensor |
DE202016101491U1 (en) | 2016-03-17 | 2016-04-04 | Endress + Hauser Gmbh + Co. Kg | Pressure measuring device |
DE102016104760A1 (en) | 2015-12-22 | 2017-06-22 | Endress + Hauser Gmbh + Co. Kg | Pressure measuring device |
US9717421B2 (en) | 2012-03-26 | 2017-08-01 | Medtronic, Inc. | Implantable medical device delivery catheter with tether |
US9719876B2 (en) | 2014-08-26 | 2017-08-01 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Fluid pressure sensor |
CN107076621A (en) * | 2014-10-30 | 2017-08-18 | 3M创新有限公司 | The capacitance temperature sensing of electric conductor |
DE102016105001A1 (en) | 2016-03-17 | 2017-09-21 | Endress + Hauser Gmbh + Co. Kg | Pressure measuring device |
US9844659B2 (en) | 2010-12-29 | 2017-12-19 | Medtronic, Inc. | Implantable medical device fixation |
CN108362406A (en) * | 2017-06-08 | 2018-08-03 | 深圳信息职业技术学院 | Inductance pressure transducer and pressure measurement circuitry |
WO2018171998A1 (en) | 2017-03-24 | 2018-09-27 | Zf Friedrichshafen Ag | Device for measuring pressure |
DE102017109183A1 (en) | 2017-04-28 | 2018-10-31 | Endress+Hauser SE+Co. KG | Pressure measuring device |
US10485435B2 (en) | 2012-03-26 | 2019-11-26 | Medtronic, Inc. | Pass-through implantable medical device delivery catheter with removeable distal tip |
DE102019111695A1 (en) * | 2019-05-06 | 2020-11-12 | Endress+Hauser SE+Co. KG | Measuring device |
US11708265B2 (en) | 2020-01-08 | 2023-07-25 | X-FAB Global Services GmbH | Method for manufacturing a membrane component and a membrane component |
Families Citing this family (62)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6665395B1 (en) * | 1998-12-11 | 2003-12-16 | Avaya Technology Corp. | Automatic call distribution system using computer network-based communication |
WO2004100363A2 (en) | 2003-05-01 | 2004-11-18 | United States Of America, As Represented By The Administrator Of The National Aeronautics And Space Administration | Magnetic field response sensor for conductive media |
WO2005027998A2 (en) * | 2003-09-16 | 2005-03-31 | Cardiomems, Inc. | Implantable wireless sensor |
US7112951B2 (en) * | 2004-06-07 | 2006-09-26 | General Electric Company | MEMS based current sensor using magnetic-to-mechanical conversion and reference components |
US7983785B2 (en) * | 2004-06-30 | 2011-07-19 | Instrumar Limited | Fibre monitoring apparatus and method |
US7426780B2 (en) * | 2004-11-10 | 2008-09-23 | Enpirion, Inc. | Method of manufacturing a power module |
US20060191351A1 (en) * | 2005-02-25 | 2006-08-31 | Meehan Peter G | Sealed capacitive sensor |
TWI320219B (en) * | 2005-07-22 | 2010-02-01 | Method for forming a double embossing structure | |
US7219021B2 (en) * | 2005-09-13 | 2007-05-15 | Honeywell International Inc. | Multiple wireless sensors for dialysis application |
US20070074579A1 (en) * | 2005-10-03 | 2007-04-05 | Honeywell International Inc. | Wireless pressure sensor and method of forming same |
US7466143B2 (en) * | 2005-09-16 | 2008-12-16 | General Electric Company | Clearance measurement systems and methods of operation |
US8631560B2 (en) * | 2005-10-05 | 2014-01-21 | Enpirion, Inc. | Method of forming a magnetic device having a conductive clip |
US7688172B2 (en) * | 2005-10-05 | 2010-03-30 | Enpirion, Inc. | Magnetic device having a conductive clip |
US8701272B2 (en) | 2005-10-05 | 2014-04-22 | Enpirion, Inc. | Method of forming a power module with a magnetic device having a conductive clip |
US7679162B2 (en) * | 2005-12-19 | 2010-03-16 | Silicon Laboratories Inc. | Integrated current sensor package |
EP1806569A1 (en) * | 2006-01-09 | 2007-07-11 | Infineon Technologies SensoNor AS | Inductive-capactive sensor |
US7638988B2 (en) * | 2006-02-21 | 2009-12-29 | Virginia Tech Intellectual Properties, Inc. | Co-fired ceramic inductors with variable inductance, and voltage regulator having same |
US7932800B2 (en) * | 2006-02-21 | 2011-04-26 | Virginia Tech Intellectual Properties, Inc. | Method and apparatus for three-dimensional integration of embedded power module |
US7990132B2 (en) * | 2006-06-30 | 2011-08-02 | Silicon Laboratories Inc. | Current sensor including an integrated circuit die including a first and second coil |
US7652586B2 (en) * | 2006-08-15 | 2010-01-26 | General Electric Company | Early fouling detection |
US7636053B2 (en) * | 2006-09-20 | 2009-12-22 | Toyota Motor Engineering & Manufacturing North America, Inc. | Article and method for monitoring temperature and pressure within a pressurized gas cylinder |
US7404331B2 (en) * | 2006-09-27 | 2008-07-29 | General Electric Company | Sensor assembly, transformers and methods of manufacture |
US8127618B1 (en) | 2007-05-18 | 2012-03-06 | Pacesetter, Inc. | Implantable micro-electromechanical system sensor |
US8177474B2 (en) * | 2007-06-26 | 2012-05-15 | General Electric Company | System and method for turbine engine clearance control with rub detection |
AU2008274151A1 (en) * | 2007-07-11 | 2009-01-15 | Marimils Oy | Method and device for capacitive detection of objects |
US7920042B2 (en) * | 2007-09-10 | 2011-04-05 | Enpirion, Inc. | Micromagnetic device and method of forming the same |
US7980145B2 (en) * | 2007-12-27 | 2011-07-19 | Y Point Capital, Inc | Microelectromechanical capacitive device |
US7829366B2 (en) * | 2008-02-29 | 2010-11-09 | Freescale Semiconductor, Inc. | Microelectromechanical systems component and method of making same |
US7728578B2 (en) * | 2008-05-15 | 2010-06-01 | Silicon Laboratories Inc. | Method and apparatus for high current measurement |
JP4843657B2 (en) * | 2008-09-30 | 2011-12-21 | アルプス電気株式会社 | Magnetic disk unit |
US8339802B2 (en) * | 2008-10-02 | 2012-12-25 | Enpirion, Inc. | Module having a stacked magnetic device and semiconductor device and method of forming the same |
US8266793B2 (en) * | 2008-10-02 | 2012-09-18 | Enpirion, Inc. | Module having a stacked magnetic device and semiconductor device and method of forming the same |
US9054086B2 (en) | 2008-10-02 | 2015-06-09 | Enpirion, Inc. | Module having a stacked passive element and method of forming the same |
US9126271B2 (en) * | 2008-10-07 | 2015-09-08 | Wisconsin Alumni Research Foundation | Method for embedding thin film sensor in a material |
US8467548B2 (en) * | 2009-04-07 | 2013-06-18 | The United States Of America As Represented By The Secretary Of The Navy | Miniature micro-electromechanical system (MEMS) based directional sound sensor |
FR2947629B1 (en) * | 2009-07-06 | 2012-03-30 | Tronic S Microsystems | PRESSURE MEASURING DEVICE AND METHOD FOR MANUFACTURING THE SAME |
EP2355138B1 (en) * | 2010-01-28 | 2016-08-24 | Canon Kabushiki Kaisha | Liquid composition, method of producing silicon substrate, and method of producing liquid discharge head substrate |
US20110188646A1 (en) * | 2010-02-02 | 2011-08-04 | Brian Taylor | Adaptive Communication Device with Telephonic Interface Capabilities |
DE102010022204B4 (en) * | 2010-05-20 | 2016-03-31 | Epcos Ag | Electric component with flat design and manufacturing process |
DE102010061795A1 (en) * | 2010-11-23 | 2012-05-24 | Robert Bosch Gmbh | Method for producing a micromechanical membrane structure and MEMS device |
US8578795B2 (en) | 2011-03-31 | 2013-11-12 | DePuy Synthes Products, LLC | Monitoring and recording implantable silicon active pressure transducer |
JP2013028155A (en) * | 2011-06-21 | 2013-02-07 | Canon Inc | Method for producing liquid-discharge-head substrate |
US20130152694A1 (en) * | 2011-11-01 | 2013-06-20 | Ilkka Urvas | Sensor with vacuum cavity and method of fabrication |
US20130160567A1 (en) * | 2011-12-21 | 2013-06-27 | Canon Kabushiki Kaisha | Force sensor |
DE102013001085A1 (en) * | 2013-01-23 | 2014-07-24 | Abb Technology Ag | Inductive pressure sensor for measuring pressure in e.g. gas, has membrane which is concentrically coated with thin coating which is formed of amorphous metal alloy having high magnetic permeability |
US9848775B2 (en) | 2013-05-22 | 2017-12-26 | The Board Of Trustees Of The Leland Stanford Junior University | Passive and wireless pressure sensor |
US9962084B2 (en) * | 2013-06-15 | 2018-05-08 | Purdue Research Foundation | Wireless interstitial fluid pressure sensor |
US9738511B2 (en) * | 2013-09-13 | 2017-08-22 | Invensense, Inc. | Reduction of chipping damage to MEMS structure |
DE102014200500A1 (en) * | 2014-01-14 | 2015-07-16 | Robert Bosch Gmbh | Micromechanical pressure sensor device and corresponding manufacturing method |
CN103926026A (en) * | 2014-05-04 | 2014-07-16 | 厦门大学 | Built-in high-temperature wireless pressure sensor |
US9939331B2 (en) | 2014-05-21 | 2018-04-10 | Infineon Technologies Ag | System and method for a capacitive thermometer |
KR101463429B1 (en) * | 2014-08-20 | 2014-11-20 | 한국지질자원연구원 | Apparatus of detecting infrasound |
KR101811214B1 (en) * | 2015-05-29 | 2017-12-22 | 고려대학교 세종산학협력단 | Flexible pressure sensor using an amorphous metal, and flexible bimodal sensor for simultaneously sensing pressure and temperature |
US9490620B1 (en) * | 2015-09-18 | 2016-11-08 | HGST Netherlands B.V. | Low permeability electrical feed-through |
KR101807062B1 (en) * | 2016-11-08 | 2018-01-18 | 현대자동차 주식회사 | Microphone and method manufacturing the same |
US10395694B1 (en) | 2017-08-09 | 2019-08-27 | Western Digital Technologies, Inc. | Low permeability electrical feed-through |
US10594100B1 (en) | 2018-06-11 | 2020-03-17 | Western Digital Technologies, Inc. | Flexible type electrical feed-through connector assembly |
US10424345B1 (en) | 2018-06-11 | 2019-09-24 | Western Digital Technologies, Inc. | Misalignment-tolerant flexible type electrical feed-through |
US11015994B2 (en) | 2018-08-22 | 2021-05-25 | Rosemount Aerospace Inc. | Differential MEMS pressure sensors with a ceramic header body and methods of making differential MEMS pressure sensors |
US10629244B1 (en) | 2018-11-07 | 2020-04-21 | Western Digital Technologies, Inc. | Sealed electrical feed-through having reduced leak rate |
CN112683428B (en) * | 2020-11-26 | 2022-07-01 | 南京高华科技股份有限公司 | MEMS inductive pressure sensor and preparation method thereof |
CN112683427B (en) * | 2020-11-26 | 2022-04-29 | 南京高华科技股份有限公司 | LC composite MEMS pressure sensor and preparation method thereof |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6532834B1 (en) * | 1999-08-06 | 2003-03-18 | Setra Systems, Inc. | Capacitive pressure sensor having encapsulated resonating components |
US20030230145A1 (en) * | 1999-08-06 | 2003-12-18 | Pinto Gino A. | Capacitive pressure sensor having encapsulated resonating components |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3916365A (en) | 1972-01-31 | 1975-10-28 | Bailey Motor Company | Integrated single crystal pressure transducer |
US3893228A (en) | 1972-10-02 | 1975-07-08 | Motorola Inc | Silicon pressure sensor |
US4203327A (en) | 1978-06-29 | 1980-05-20 | Honeywell Inc. | Piezoresistive silicon strain sensors and pressure transducers incorporating them |
JPS5516228A (en) | 1978-07-21 | 1980-02-04 | Hitachi Ltd | Capacity type sensor |
US4625561A (en) | 1984-12-06 | 1986-12-02 | Ford Motor Company | Silicon capacitive pressure sensor and method of making |
US4763098A (en) | 1985-04-08 | 1988-08-09 | Honeywell Inc. | Flip-chip pressure transducer |
US4881410A (en) | 1987-06-01 | 1989-11-21 | The Regents Of The University Of Michigan | Ultraminiature pressure sensor and method of making same |
US5936164A (en) | 1997-08-27 | 1999-08-10 | Delco Electronics Corporation | All-silicon capacitive pressure sensor |
KR100300527B1 (en) | 1998-09-03 | 2001-10-27 | 윤덕용 | Remote pressure monitoring device of sealed type and manufacture method for the same |
DE10226201A1 (en) | 2002-06-12 | 2003-12-24 | Ifac Gmbh & Co Kg Inst Fuer An | Ether alcohols as solvents and emulsions and dispersions containing them |
-
2003
- 2003-06-17 US US10/462,811 patent/US7024936B2/en not_active Expired - Lifetime
- 2003-06-18 WO PCT/US2003/019121 patent/WO2003106952A2/en not_active Application Discontinuation
- 2003-06-18 AU AU2003253656A patent/AU2003253656A1/en not_active Abandoned
-
2004
- 2004-08-31 US US10/929,446 patent/US7017419B2/en not_active Expired - Lifetime
- 2004-12-13 US US11/009,706 patent/US7188530B2/en not_active Expired - Lifetime
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6532834B1 (en) * | 1999-08-06 | 2003-03-18 | Setra Systems, Inc. | Capacitive pressure sensor having encapsulated resonating components |
US20030230145A1 (en) * | 1999-08-06 | 2003-12-18 | Pinto Gino A. | Capacitive pressure sensor having encapsulated resonating components |
US20040035211A1 (en) * | 1999-08-06 | 2004-02-26 | Pinto Gino A. | Capacitive pressure sensor having encapsulated resonating components |
US6789429B2 (en) * | 1999-08-06 | 2004-09-14 | Setra System, Inc. | Capacitive pressure sensor having encapsulated resonating components |
Cited By (79)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8896324B2 (en) | 2003-09-16 | 2014-11-25 | Cardiomems, Inc. | System, apparatus, and method for in-vivo assessment of relative position of an implant |
US7644621B2 (en) | 2004-10-18 | 2010-01-12 | Silverbrook Research Pty Ltd | Capped and chambered pressure sensor |
US7568395B2 (en) | 2004-10-18 | 2009-08-04 | Silverbrook Research Pty Ltd | Pressure sensor with dual chambers |
US7089797B2 (en) | 2004-10-18 | 2006-08-15 | Silverbrook Research Pty Ltd | Temperature insensitive pressure sensor |
US7089798B2 (en) | 2004-10-18 | 2006-08-15 | Silverbrook Research Pty Ltd | Pressure sensor with thin membrane |
US7093494B2 (en) | 2004-10-18 | 2006-08-22 | Silverbrook Research Pty Ltd | Micro-electromechanical pressure sensor |
US7121145B2 (en) | 2004-10-18 | 2006-10-17 | Silverbrook Research Pty Ltd | Capacitative pressure sensor |
US7124643B2 (en) | 2004-10-18 | 2006-10-24 | Silverbrook Research Pty Ltd | Pressure sensor with non-planar membrane |
US7137302B2 (en) | 2004-10-18 | 2006-11-21 | Silverbrook Research Pty Ltd | Capacitative pressure sensor with transition metal nitride electrode |
US7143652B2 (en) | 2004-10-18 | 2006-12-05 | Silverbrook Research Pty Ltd | Pressure sensor for high acceleration environment |
US7159467B2 (en) | 2004-10-18 | 2007-01-09 | Silverbrook Research Pty Ltd | Pressure sensor with conductive ceramic membrane |
US7165460B2 (en) | 2004-10-18 | 2007-01-23 | Silverbrook Research Pty Ltd | Temperature compensated pressure sensor |
US7171855B2 (en) | 2004-10-18 | 2007-02-06 | Silverbrook Research Pty Ltd | Sensor for sensing temperature adjusted fluid pressure |
US7194901B2 (en) | 2004-10-18 | 2007-03-27 | Silverbrook Research Pty Ltd | Pressure sensor with apertured membrane guard |
US7222538B2 (en) | 2004-10-18 | 2007-05-29 | Silverbrook Research Pty Ltd | Fluid permeable membrane sensor |
US7234357B2 (en) | 2004-10-18 | 2007-06-26 | Silverbrook Research Pty Ltd | Wafer bonded pressure sensor |
US7240560B2 (en) | 2004-10-18 | 2007-07-10 | Silverbrook Research Pty Ltd | Pressure sensor with remote power source |
US7258020B2 (en) | 2004-10-18 | 2007-08-21 | Silverbrook Research Pty Ltd | Pressure sensor with conductive ceramic membrane |
US7258019B2 (en) | 2004-10-18 | 2007-08-21 | Silverbrook Research Pty Ltd | Pressure sensor for high acceleration environments |
US7260993B2 (en) | 2004-10-18 | 2007-08-28 | Silverbrook Research Pty Ltd | Pressure sensor with low sensitivity to acceleration forces |
US7260995B2 (en) | 2004-10-18 | 2007-08-28 | Silverbrook Research Pty Ltd | Pressure sensor having thin pressure sensing membrane |
US7334480B2 (en) | 2004-10-18 | 2008-02-26 | Silverbrook Research Pty Ltd | Dual membrane sensor for temperature compensated pressure sensing |
US7350417B2 (en) | 2004-10-18 | 2008-04-01 | Silverbrook Research Pty Ltd | Pressure sensor with conductive laminate membrane |
US7367235B2 (en) | 2004-10-18 | 2008-05-06 | Silverbrook Research Pty Ltd | Thermal expansion compensated pressure sensor |
US7380460B2 (en) | 2004-10-18 | 2008-06-03 | Silverbrook Research Pty Ltd | Dual wafer pressure sensor |
AU2004324296B2 (en) * | 2004-10-18 | 2008-07-31 | Silverbrook Research Pty Ltd | Micro-electromechanical pressure sensor |
US7430919B2 (en) | 2004-10-18 | 2008-10-07 | Silverbrook Research Pty Ltd | Capacitive pressure sensor with reference chamber |
US7458272B2 (en) | 2004-10-18 | 2008-12-02 | Silverbrook Research Pty Ltd | Capacitative pressure sensor with ceramic membrane |
US7461558B2 (en) | 2004-10-18 | 2008-12-09 | Silverbrook Research Pty Ltd | Capacitive pressure sensor with sealed reference chamber |
US7464598B2 (en) | 2004-10-18 | 2008-12-16 | Silverbrook Research Pty Ltd | Method of pressure sensing with a pressure sensor having a sensor membrane and a compensation membrane |
US7739916B2 (en) | 2004-10-18 | 2010-06-22 | Silverbrook Research Pty Ltd | Gas pressure sensor with temperature compensation |
US7516669B2 (en) | 2004-10-18 | 2009-04-14 | Silverbrook Research Pty Ltd | Capacitance sensing circuit for a pressure sensor |
US7533573B2 (en) | 2004-10-18 | 2009-05-19 | Silverbrook Research Pty Ltd | Pressure sensor including temperature adjustment |
US7549328B2 (en) | 2004-10-18 | 2009-06-23 | Silverbrook Research Pty Ltd | Method of fabricating a pressure sensor |
US7549342B2 (en) | 2004-10-18 | 2009-06-23 | Silverbrook Research Pty Ltd | Capacitative pressure sensor for oxidative environments |
US7841238B2 (en) | 2004-10-18 | 2010-11-30 | Silverbrook Research Pty Ltd | Pressure sensor with temperature compensation |
US7581447B2 (en) | 2004-10-18 | 2009-09-01 | Silverbrook Research Pty Ltd | Temperature compensating pressure sensing arrangement |
US7617734B2 (en) | 2004-10-18 | 2009-11-17 | Silverbrook Research Pty Ltd | Pressure sensor with dual chamber cover |
US6968744B1 (en) | 2004-10-18 | 2005-11-29 | Silverbrook Research Pty Ltd | Capacitative pressure sensor with close electrodes |
US7464599B2 (en) | 2004-10-18 | 2008-12-16 | Silverbrook Research Pty Ltd | Temperature compensating pressure sensor having active and reference membranes |
US7770441B2 (en) | 2004-10-18 | 2010-08-10 | Silverbrook Research Pty Ltd | Acceleration insensitive pressure sensor |
US7089790B2 (en) | 2004-10-18 | 2006-08-15 | Silverbrook Research Pty Ltd | Pressure sensor with laminated membrane |
US7854170B2 (en) | 2004-10-18 | 2010-12-21 | Silverbrook Research Pty Ltd | Capacitance sensing circuit for membrane pressure sensor |
US7854171B2 (en) | 2004-10-18 | 2010-12-21 | Silverbrook Research Pty Ltd | Temperature compensated miniature pressure sensor |
US7878067B2 (en) | 2004-10-18 | 2011-02-01 | Silverbrook Research Pty Ltd | Temperature compensating pressure sensor |
US7913567B2 (en) | 2004-10-18 | 2011-03-29 | Silverbrook Research Pty Ltd | Temperature compensating pressure sensor having corrugated active membrane |
US7921725B2 (en) | 2004-10-18 | 2011-04-12 | Silverbrook Research Pty Ltd | Pressure sensor with dual chamber cover and corrugated membrane |
US7934427B2 (en) | 2004-10-18 | 2011-05-03 | Silverbrook Research Pty Ltd | Capacitative pressure sensor |
US7980139B2 (en) | 2004-10-18 | 2011-07-19 | Silverbrook Research Pty Ltd | Miniature pressure sensor assembly |
US8065918B2 (en) | 2004-10-18 | 2011-11-29 | Silverbrook Research Pty Ltd | Air pressure sensor with temperature compensation |
US8322205B2 (en) | 2004-10-18 | 2012-12-04 | Silverbrook Research Pty Ltd | Method of fabricating a integrated pressure sensor |
WO2006042357A1 (en) | 2004-10-18 | 2006-04-27 | Silverbrook Research Pty Ltd | Micro-electromechanical pressure sensor |
US7662653B2 (en) | 2005-02-10 | 2010-02-16 | Cardiomems, Inc. | Method of manufacturing a hermetic chamber with electrical feedthroughs |
US8118748B2 (en) | 2005-04-28 | 2012-02-21 | Medtronic, Inc. | Implantable capacitive pressure sensor system and method |
WO2007002225A3 (en) * | 2005-06-21 | 2007-03-22 | Cardiomems Inc | Implantable wireless sensor for in vivo pressure measurement |
WO2007002185A3 (en) * | 2005-06-21 | 2008-03-20 | Cardiomems Inc | Method of manufacturing implantable wireless sensor for in vivo pressure measurement |
AU2012247061B2 (en) * | 2005-06-21 | 2014-07-17 | Cardiomems, Inc. | Implantable wireless sensor for in vivo pressure measurement |
US9078563B2 (en) | 2005-06-21 | 2015-07-14 | St. Jude Medical Luxembourg Holdings II S.à.r.l. | Method of manufacturing implantable wireless sensor for in vivo pressure measurement |
US9844659B2 (en) | 2010-12-29 | 2017-12-19 | Medtronic, Inc. | Implantable medical device fixation |
US10835737B2 (en) | 2010-12-29 | 2020-11-17 | Medtronic, Inc. | Implantable medical device fixation |
US9717421B2 (en) | 2012-03-26 | 2017-08-01 | Medtronic, Inc. | Implantable medical device delivery catheter with tether |
US10485435B2 (en) | 2012-03-26 | 2019-11-26 | Medtronic, Inc. | Pass-through implantable medical device delivery catheter with removeable distal tip |
GB2523266A (en) * | 2014-07-15 | 2015-08-19 | Univ Bristol | Wireless sensor |
US10361587B2 (en) | 2014-07-15 | 2019-07-23 | The University Of Bristol | Wireless sensor |
GB2523266B (en) * | 2014-07-15 | 2016-09-21 | Univ Bristol | Wireless sensor |
US9719876B2 (en) | 2014-08-26 | 2017-08-01 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Fluid pressure sensor |
CN107076621A (en) * | 2014-10-30 | 2017-08-18 | 3M创新有限公司 | The capacitance temperature sensing of electric conductor |
CN107076621B (en) * | 2014-10-30 | 2020-12-04 | 3M创新有限公司 | Capacitive temperature sensing of electrical conductors |
DE102016104760A1 (en) | 2015-12-22 | 2017-06-22 | Endress + Hauser Gmbh + Co. Kg | Pressure measuring device |
DE102016105001A1 (en) | 2016-03-17 | 2017-09-21 | Endress + Hauser Gmbh + Co. Kg | Pressure measuring device |
DE202016101491U1 (en) | 2016-03-17 | 2016-04-04 | Endress + Hauser Gmbh + Co. Kg | Pressure measuring device |
DE102017205054A1 (en) | 2017-03-24 | 2018-10-18 | Zf Friedrichshafen Ag | Device for measuring pressure |
WO2018171998A1 (en) | 2017-03-24 | 2018-09-27 | Zf Friedrichshafen Ag | Device for measuring pressure |
CN110462359A (en) * | 2017-03-24 | 2019-11-15 | Zf腓德烈斯哈芬股份公司 | For measuring the device of pressure |
DE102017109183A1 (en) | 2017-04-28 | 2018-10-31 | Endress+Hauser SE+Co. KG | Pressure measuring device |
WO2018197128A1 (en) | 2017-04-28 | 2018-11-01 | Endress+Hauser SE+Co. KG | Pressure measuring device |
CN108362406A (en) * | 2017-06-08 | 2018-08-03 | 深圳信息职业技术学院 | Inductance pressure transducer and pressure measurement circuitry |
DE102019111695A1 (en) * | 2019-05-06 | 2020-11-12 | Endress+Hauser SE+Co. KG | Measuring device |
US11708265B2 (en) | 2020-01-08 | 2023-07-25 | X-FAB Global Services GmbH | Method for manufacturing a membrane component and a membrane component |
Also Published As
Publication number | Publication date |
---|---|
US20040057589A1 (en) | 2004-03-25 |
US7024936B2 (en) | 2006-04-11 |
US20050103112A1 (en) | 2005-05-19 |
US20050028601A1 (en) | 2005-02-10 |
US7188530B2 (en) | 2007-03-13 |
AU2003253656A8 (en) | 2003-12-31 |
WO2003106952A3 (en) | 2005-05-06 |
US7017419B2 (en) | 2006-03-28 |
AU2003253656A1 (en) | 2003-12-31 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US7017419B2 (en) | Micro-mechanical capacitive inductive sensor for wireless detection of relative or absolute pressure | |
US8025625B2 (en) | Sensor with electromagnetically coupled hermetic pressure reference | |
EP1920229B1 (en) | Pressure sensors and methods of making the same | |
US6431005B1 (en) | Microsystem with a flexible membrane pressure sensor | |
EP0619471B1 (en) | A method of manufacturing a motion sensor | |
KR20000057142A (en) | Micromechanical sensor | |
WO2006062275A1 (en) | Variable inductor type mems pressure sensor using magnetostrictive effect | |
EP0136249A2 (en) | Three plate, silicon-glass-silicon capacitive pressure transducer | |
JP2004505269A (en) | Micromachined absolute pressure sensor | |
EP1713399A2 (en) | Cmut devices and fabrication methods | |
JP2003522942A (en) | Oilless differential pressure sensor | |
CN112683348B (en) | MEMS capacitive flow sensor and preparation method thereof | |
EP1806569A1 (en) | Inductive-capactive sensor | |
CN114593846B (en) | Silicon resonant high-voltage sensor with high Q value and manufacturing method thereof | |
CN113340517B (en) | MEMS (micro-electromechanical system) capacitor pressure chip, preparation method thereof and capacitor pressure sensor | |
CN116242525A (en) | MEMS pressure sensor, preparation method thereof and electronic device | |
CN113447166B (en) | MEMS pressure sensor based on frequency detection principle and preparation method | |
CN113353883B (en) | MEMS pressure sensor based on phase detection principle and preparation method | |
CN112683427B (en) | LC composite MEMS pressure sensor and preparation method thereof | |
CN218381360U (en) | MEMS pressure sensor | |
Belavič et al. | Design of a capacitive LTCC-based pressure sensor | |
CN115507980A (en) | MEMS pressure sensor and preparation method thereof | |
CN117645271A (en) | Resonant pressure sensor based on through silicon via technology and preparation method thereof | |
Liu et al. | A Capacitive Pressure Sensor Based on LTCC/PDMS Bonding Technology | |
Allen et al. | Alternative micromachining approaches for the realization of robust MEMS |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
AK | Designated states |
Kind code of ref document: A2 Designated state(s): AE AG AL AM AT AU AZ BA BB BG BR BY BZ CA CH CN CO CR CU CZ DE DK DM DZ EC EE ES FI GB GD GE GH GM HR HU ID IL IN IS JP KE KG KP KR KZ LC LK LR LS LT LU LV MA MD MG MK MN MW MX MZ NO NZ PH PL PT RO RU SD SE SG SK SL TJ TM TR TT TZ UA UG US UZ VN YU ZA ZW |
|
AL | Designated countries for regional patents |
Kind code of ref document: A2 Designated state(s): GH GM KE LS MW MZ SD SL SZ TZ UG ZM ZW AM AZ BY KG KZ MD RU TJ TM AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IT LU MC NL PT RO SE SI SK TR BF BJ CF CG CI CM GA GN GQ GW ML MR NE SN TD TG |
|
121 | Ep: the epo has been informed by wipo that ep was designated in this application | ||
122 | Ep: pct application non-entry in european phase | ||
NENP | Non-entry into the national phase |
Ref country code: JP |
|
WWW | Wipo information: withdrawn in national office |
Country of ref document: JP |