WO2003103020A3 - Layered components, materials, methods of production and uses thereof - Google Patents

Layered components, materials, methods of production and uses thereof Download PDF

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Publication number
WO2003103020A3
WO2003103020A3 PCT/US2003/017656 US0317656W WO03103020A3 WO 2003103020 A3 WO2003103020 A3 WO 2003103020A3 US 0317656 W US0317656 W US 0317656W WO 03103020 A3 WO03103020 A3 WO 03103020A3
Authority
WO
WIPO (PCT)
Prior art keywords
pores
diffusion blocking
pore diameter
methods
dielectric material
Prior art date
Application number
PCT/US2003/017656
Other languages
French (fr)
Other versions
WO2003103020A2 (en
Inventor
Nancy Iwamoto
Michael Thomas
Original Assignee
Honeywell Int Inc
Nancy Iwamoto
Michael Thomas
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to TW092114914A priority Critical patent/TW200416131A/en
Application filed by Honeywell Int Inc, Nancy Iwamoto, Michael Thomas filed Critical Honeywell Int Inc
Priority to AU2003273546A priority patent/AU2003273546A1/en
Publication of WO2003103020A2 publication Critical patent/WO2003103020A2/en
Publication of WO2003103020A3 publication Critical patent/WO2003103020A3/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02203—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being porous
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/7682—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing the dielectric comprising air gaps
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/76822—Modification of the material of dielectric layers, e.g. grading, after-treatment to improve the stability of the layers, to increase their density etc.
    • H01L21/76825—Modification of the material of dielectric layers, e.g. grading, after-treatment to improve the stability of the layers, to increase their density etc. by exposing the layer to particle radiation, e.g. ion implantation, irradiation with UV light or electrons etc.
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/76822—Modification of the material of dielectric layers, e.g. grading, after-treatment to improve the stability of the layers, to increase their density etc.
    • H01L21/76828—Modification of the material of dielectric layers, e.g. grading, after-treatment to improve the stability of the layers, to increase their density etc. thermal treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
    • H01L23/5329—Insulating materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/10—Applying interconnections to be used for carrying current between separate components within a device
    • H01L2221/1005—Formation and after-treatment of dielectrics
    • H01L2221/1042—Formation and after-treatment of dielectrics the dielectric comprising air gaps
    • H01L2221/1047—Formation and after-treatment of dielectrics the dielectric comprising air gaps the air gaps being formed by pores in the dielectric
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/095—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00 with a principal constituent of the material being a combination of two or more materials provided in the groups H01L2924/013 - H01L2924/0715
    • H01L2924/097—Glass-ceramics, e.g. devitrified glass
    • H01L2924/09701—Low temperature co-fired ceramic [LTCC]

Abstract

A layered component is described that includes: a substrate; a dielectric material having a plurality of pores, wherein the material is coupled to the substrate; and a diffusion blocking material coupled to the low k dielectric material, wherein the diffusion blocking material is attracted to the low k dielectric material. A layered material is also described that includes: a dielectric material having a plurality of pores, wherein each pore has a pore diameter; and a layer comprising a plurality of diffusion blocking particles, wherein the particles have a article size that is larger than the pore diameter. Methods of minimizing the diffusion of metal atoms into a material having a plurality of pores are further disclosed that include: providing a precursor material that comprises molecules having a molecule size that is larger than a pore diameter of any of the plurality of pores; providing a solvent carrier solution; combining the precursor material and the solvent carrier solution to form a diffusion blocking reactive solution; and applying the diffusion blocking reactive solution to a layer of porous material.
PCT/US2003/017656 2002-06-03 2003-06-03 Layered components, materials, methods of production and uses thereof WO2003103020A2 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
TW092114914A TW200416131A (en) 2002-06-03 2003-06-02 Layered components, materials, methods of production and uses thereof
AU2003273546A AU2003273546A1 (en) 2002-06-03 2003-06-03 Layered components, materials, methods of production and uses thereof

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US38548202P 2002-06-03 2002-06-03
US60/385,482 2002-06-03

Publications (2)

Publication Number Publication Date
WO2003103020A2 WO2003103020A2 (en) 2003-12-11
WO2003103020A3 true WO2003103020A3 (en) 2004-06-03

Family

ID=29712173

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2003/017656 WO2003103020A2 (en) 2002-06-03 2003-06-03 Layered components, materials, methods of production and uses thereof

Country Status (3)

Country Link
AU (1) AU2003273546A1 (en)
TW (1) TW200416131A (en)
WO (1) WO2003103020A2 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20110151266A1 (en) * 2009-12-03 2011-06-23 Basf Se Anticorrosion pigments with positive zeta potential

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5965202A (en) * 1996-05-02 1999-10-12 Lucent Technologies, Inc. Hybrid inorganic-organic composite for use as an interlayer dielectric
US6054379A (en) * 1998-02-11 2000-04-25 Applied Materials, Inc. Method of depositing a low k dielectric with organo silane
US6423811B1 (en) * 2000-07-19 2002-07-23 Honeywell International Inc. Low dielectric constant materials with polymeric networks
US6472705B1 (en) * 1998-11-18 2002-10-29 International Business Machines Corporation Molecular memory & logic

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5965202A (en) * 1996-05-02 1999-10-12 Lucent Technologies, Inc. Hybrid inorganic-organic composite for use as an interlayer dielectric
US6054379A (en) * 1998-02-11 2000-04-25 Applied Materials, Inc. Method of depositing a low k dielectric with organo silane
US6472705B1 (en) * 1998-11-18 2002-10-29 International Business Machines Corporation Molecular memory & logic
US6423811B1 (en) * 2000-07-19 2002-07-23 Honeywell International Inc. Low dielectric constant materials with polymeric networks

Also Published As

Publication number Publication date
AU2003273546A1 (en) 2003-12-19
WO2003103020A2 (en) 2003-12-11
TW200416131A (en) 2004-09-01
AU2003273546A8 (en) 2003-12-19

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