WO2003096351A3 - Memories and memory circuits - Google Patents

Memories and memory circuits Download PDF

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Publication number
WO2003096351A3
WO2003096351A3 PCT/IB2003/001748 IB0301748W WO03096351A3 WO 2003096351 A3 WO2003096351 A3 WO 2003096351A3 IB 0301748 W IB0301748 W IB 0301748W WO 03096351 A3 WO03096351 A3 WO 03096351A3
Authority
WO
WIPO (PCT)
Prior art keywords
mram
memory circuits
memories
memory
mrams
Prior art date
Application number
PCT/IB2003/001748
Other languages
French (fr)
Other versions
WO2003096351A2 (en
WO2003096351A8 (en
Inventor
Der Zaag Pieter J Van
Martin J Edwards
Kars-Michiel H Lenssen
Original Assignee
Koninkl Philips Electronics Nv
Der Zaag Pieter J Van
Martin J Edwards
Kars-Michiel H Lenssen
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to KR10-2004-7019052A priority Critical patent/KR20050009714A/en
Priority to EP03715282A priority patent/EP1529290A2/en
Priority to US10/513,873 priority patent/US20050157539A1/en
Application filed by Koninkl Philips Electronics Nv, Der Zaag Pieter J Van, Martin J Edwards, Kars-Michiel H Lenssen filed Critical Koninkl Philips Electronics Nv
Priority to AU2003219470A priority patent/AU2003219470A1/en
Priority to JP2004504238A priority patent/JP2005525670A/en
Publication of WO2003096351A2 publication Critical patent/WO2003096351A2/en
Publication of WO2003096351A8 publication Critical patent/WO2003096351A8/en
Publication of WO2003096351A3 publication Critical patent/WO2003096351A3/en

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1673—Reading or sensing circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/161—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1659—Cell access
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C14/00—Digital stores characterised by arrangements of cells having volatile and non-volatile storage properties for back-up when the power is down
    • G11C14/0054—Digital stores characterised by arrangements of cells having volatile and non-volatile storage properties for back-up when the power is down in which the volatile element is a SRAM cell
    • G11C14/0081—Digital stores characterised by arrangements of cells having volatile and non-volatile storage properties for back-up when the power is down in which the volatile element is a SRAM cell and the nonvolatile element is a magnetic RAM [MRAM] element or ferromagnetic cell
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
    • G11C19/28—Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements

Abstract

Magnetoresistive random access memory (MRAM) is used to provide in-pixel memory circuits for display devices. A memory circuit (25) comprises two MRAMs (60, 62), each coupled to a respective input of a flip-flop circuit (64). A display device (1) is provided comprising a plurality of pixels (20) each associated with a memory circuit (25). One of the MRAMs is a switchable MRAM (60), the other MRAM is a reference MRAM (62) arranged to provide a reference by which the changed states of the switchable MRAM (60) may be readily observed and measured in the form of a differential.
PCT/IB2003/001748 2002-05-10 2003-04-29 Memories and memory circuits WO2003096351A2 (en)

Priority Applications (5)

Application Number Priority Date Filing Date Title
KR10-2004-7019052A KR20050009714A (en) 2002-05-10 2003-04-25 Memories and memory circuits
EP03715282A EP1529290A2 (en) 2002-05-10 2003-04-25 Memories and memory circuits
US10/513,873 US20050157539A1 (en) 2002-05-10 2003-04-25 Memories and memory circuits
AU2003219470A AU2003219470A1 (en) 2002-05-10 2003-04-29 Memories and memory circuits
JP2004504238A JP2005525670A (en) 2002-05-10 2003-04-29 Memory and memory circuit

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GBGB0210719.1A GB0210719D0 (en) 2002-05-10 2002-05-10 Memories and memory circuits
GB0210719.1 2002-05-10

Publications (3)

Publication Number Publication Date
WO2003096351A2 WO2003096351A2 (en) 2003-11-20
WO2003096351A8 WO2003096351A8 (en) 2004-12-23
WO2003096351A3 true WO2003096351A3 (en) 2005-03-17

Family

ID=9936417

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/IB2003/001748 WO2003096351A2 (en) 2002-05-10 2003-04-29 Memories and memory circuits

Country Status (8)

Country Link
EP (1) EP1529290A2 (en)
JP (1) JP2005525670A (en)
KR (1) KR20050009714A (en)
CN (1) CN1692447A (en)
AU (1) AU2003219470A1 (en)
GB (1) GB0210719D0 (en)
TW (1) TW200407887A (en)
WO (1) WO2003096351A2 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI427596B (en) * 2009-08-14 2014-02-21 Innolux Corp Display apparatus

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08321016A (en) * 1995-05-25 1996-12-03 Sanyo Electric Co Ltd Magnetoresistive film
US6191972B1 (en) * 1999-04-30 2001-02-20 Nec Corporation Magnetic random access memory circuit
EP1126468A2 (en) * 2000-02-04 2001-08-22 Hewlett-Packard Company, A Delaware Corporation MRAM device including differential sense amplifiers
US20020008987A1 (en) * 2000-06-19 2002-01-24 Nec Corporation Magnetic random access memory

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08321016A (en) * 1995-05-25 1996-12-03 Sanyo Electric Co Ltd Magnetoresistive film
US6191972B1 (en) * 1999-04-30 2001-02-20 Nec Corporation Magnetic random access memory circuit
EP1126468A2 (en) * 2000-02-04 2001-08-22 Hewlett-Packard Company, A Delaware Corporation MRAM device including differential sense amplifiers
US20020008987A1 (en) * 2000-06-19 2002-01-24 Nec Corporation Magnetic random access memory

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
PATENT ABSTRACTS OF JAPAN vol. 1997, no. 04 30 April 1997 (1997-04-30) *

Also Published As

Publication number Publication date
WO2003096351A2 (en) 2003-11-20
CN1692447A (en) 2005-11-02
TW200407887A (en) 2004-05-16
WO2003096351A8 (en) 2004-12-23
KR20050009714A (en) 2005-01-25
EP1529290A2 (en) 2005-05-11
GB0210719D0 (en) 2002-06-19
AU2003219470A8 (en) 2003-11-11
JP2005525670A (en) 2005-08-25
AU2003219470A1 (en) 2003-11-11

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