WO2003095701A8 - Volatile copper(ii) complexes for deposition of copper films by atomic layer deposition - Google Patents
Volatile copper(ii) complexes for deposition of copper films by atomic layer depositionInfo
- Publication number
- WO2003095701A8 WO2003095701A8 PCT/US2003/001846 US0301846W WO03095701A8 WO 2003095701 A8 WO2003095701 A8 WO 2003095701A8 US 0301846 W US0301846 W US 0301846W WO 03095701 A8 WO03095701 A8 WO 03095701A8
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- copper
- deposition
- complexes
- atomic layer
- volatile
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45553—Atomic layer deposition [ALD] characterized by the use of precursors specially adapted for ALD
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
- C07C251/00—Compounds containing nitrogen atoms doubly-bound to a carbon skeleton
- C07C251/02—Compounds containing nitrogen atoms doubly-bound to a carbon skeleton containing imino groups
- C07C251/04—Compounds containing nitrogen atoms doubly-bound to a carbon skeleton containing imino groups having carbon atoms of imino groups bound to hydrogen atoms or to acyclic carbon atoms
- C07C251/10—Compounds containing nitrogen atoms doubly-bound to a carbon skeleton containing imino groups having carbon atoms of imino groups bound to hydrogen atoms or to acyclic carbon atoms to carbon atoms of an unsaturated carbon skeleton
- C07C251/12—Compounds containing nitrogen atoms doubly-bound to a carbon skeleton containing imino groups having carbon atoms of imino groups bound to hydrogen atoms or to acyclic carbon atoms to carbon atoms of an unsaturated carbon skeleton being acyclic
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
- C07C251/00—Compounds containing nitrogen atoms doubly-bound to a carbon skeleton
- C07C251/02—Compounds containing nitrogen atoms doubly-bound to a carbon skeleton containing imino groups
- C07C251/04—Compounds containing nitrogen atoms doubly-bound to a carbon skeleton containing imino groups having carbon atoms of imino groups bound to hydrogen atoms or to acyclic carbon atoms
- C07C251/10—Compounds containing nitrogen atoms doubly-bound to a carbon skeleton containing imino groups having carbon atoms of imino groups bound to hydrogen atoms or to acyclic carbon atoms to carbon atoms of an unsaturated carbon skeleton
- C07C251/16—Compounds containing nitrogen atoms doubly-bound to a carbon skeleton containing imino groups having carbon atoms of imino groups bound to hydrogen atoms or to acyclic carbon atoms to carbon atoms of an unsaturated carbon skeleton containing six-membered aromatic rings
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07D—HETEROCYCLIC COMPOUNDS
- C07D213/00—Heterocyclic compounds containing six-membered rings, not condensed with other rings, with one nitrogen atom as the only ring hetero atom and three or more double bonds between ring members or between ring members and non-ring members
- C07D213/02—Heterocyclic compounds containing six-membered rings, not condensed with other rings, with one nitrogen atom as the only ring hetero atom and three or more double bonds between ring members or between ring members and non-ring members having three double bonds between ring members or between ring members and non-ring members
- C07D213/04—Heterocyclic compounds containing six-membered rings, not condensed with other rings, with one nitrogen atom as the only ring hetero atom and three or more double bonds between ring members or between ring members and non-ring members having three double bonds between ring members or between ring members and non-ring members having no bond between the ring nitrogen atom and a non-ring member or having only hydrogen or carbon atoms directly attached to the ring nitrogen atom
- C07D213/60—Heterocyclic compounds containing six-membered rings, not condensed with other rings, with one nitrogen atom as the only ring hetero atom and three or more double bonds between ring members or between ring members and non-ring members having three double bonds between ring members or between ring members and non-ring members having no bond between the ring nitrogen atom and a non-ring member or having only hydrogen or carbon atoms directly attached to the ring nitrogen atom with hetero atoms or with carbon atoms having three bonds to hetero atoms with at the most one bond to halogen, e.g. ester or nitrile radicals, directly attached to ring carbon atoms
- C07D213/72—Nitrogen atoms
- C07D213/74—Amino or imino radicals substituted by hydrocarbon or substituted hydrocarbon radicals
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
- C23C16/18—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metallo-organic compounds
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
- H01L21/0228—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition deposition by cyclic CVD, e.g. ALD, ALE, pulsed CVD
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/314—Inorganic layers
- H01L21/3141—Deposition using atomic layer deposition techniques [ALD]
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/31504—Composite [nonstructural laminate]
Abstract
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004503688A JP2005520053A (en) | 2002-01-18 | 2003-01-17 | Volatile copper (II) complexes for depositing copper thin films by atomic layer deposition |
KR10-2004-7011062A KR20040077733A (en) | 2002-01-18 | 2003-01-17 | Volatile copper(ii) complexes for deposition of copper films by atomic layer deposition |
EP20030750016 EP1466032A1 (en) | 2002-01-18 | 2003-01-21 | Volatile copper(ii) complexes for deposition of copper films by atomic layer deposition |
US10/499,934 US20050003075A1 (en) | 2002-01-18 | 2003-01-21 | Volatile copper(II) complexes for deposition of copper films by atomic layer deposition |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US34963902P | 2002-01-18 | 2002-01-18 | |
US60/349,639 | 2002-01-18 |
Publications (2)
Publication Number | Publication Date |
---|---|
WO2003095701A1 WO2003095701A1 (en) | 2003-11-20 |
WO2003095701A8 true WO2003095701A8 (en) | 2004-05-21 |
Family
ID=29420294
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US2003/001846 WO2003095701A1 (en) | 2002-01-18 | 2003-01-21 | Volatile copper(ii) complexes for deposition of copper films by atomic layer deposition |
Country Status (7)
Country | Link |
---|---|
US (6) | US6939578B2 (en) |
EP (1) | EP1466032A1 (en) |
JP (1) | JP2005520053A (en) |
KR (1) | KR20040077733A (en) |
CN (1) | CN100360709C (en) |
AU (1) | AU2003210599A1 (en) |
WO (1) | WO2003095701A1 (en) |
Families Citing this family (32)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7049226B2 (en) * | 2001-09-26 | 2006-05-23 | Applied Materials, Inc. | Integration of ALD tantalum nitride for copper metallization |
US7199255B2 (en) * | 2001-12-18 | 2007-04-03 | Univation Technologies, Llc | Imino-amide catalysts for olefin polymerization |
JP2005520053A (en) * | 2002-01-18 | 2005-07-07 | イー・アイ・デュポン・ドウ・ヌムール・アンド・カンパニー | Volatile copper (II) complexes for depositing copper thin films by atomic layer deposition |
US6911391B2 (en) * | 2002-01-26 | 2005-06-28 | Applied Materials, Inc. | Integration of titanium and titanium nitride layers |
US20040009665A1 (en) * | 2002-06-04 | 2004-01-15 | Applied Materials, Inc. | Deposition of copper films |
US20040247905A1 (en) * | 2003-04-16 | 2004-12-09 | Bradley Alexander Zak | Volatile copper(I) complexes for deposition of copper films by atomic layer deposition |
US20050227007A1 (en) * | 2004-04-08 | 2005-10-13 | Bradley Alexander Z | Volatile copper(I) complexes for deposition of copper films by atomic layer deposition |
WO2006015225A1 (en) * | 2004-07-30 | 2006-02-09 | E.I. Dupont De Nemours And Company | Copper (ii) complexes for deposition of copper films by atomic layer deposition |
US7604840B2 (en) * | 2004-08-16 | 2009-10-20 | E. I. Du Pont De Nemours And Company | Atomic layer deposition of copper using surface-activation agents |
EP1629902A1 (en) * | 2004-08-30 | 2006-03-01 | E.I. Dupont De Nemours And Company | Method of copper deposition from a supercritical fluid solution containing copper (1) complexes with a neutral ligand |
US7416994B2 (en) * | 2005-06-28 | 2008-08-26 | Micron Technology, Inc. | Atomic layer deposition systems and methods including metal beta-diketiminate compounds |
US7572731B2 (en) * | 2005-06-28 | 2009-08-11 | Micron Technology, Inc. | Unsymmetrical ligand sources, reduced symmetry metal-containing compounds, and systems and methods including same |
US7439338B2 (en) | 2005-06-28 | 2008-10-21 | Micron Technology, Inc. | Beta-diketiminate ligand sources and metal-containing compounds thereof, and systems and methods including same |
US7776394B2 (en) * | 2005-08-08 | 2010-08-17 | E.I. Du Pont De Nemours And Company | Atomic layer deposition of metal-containing films using surface-activating agents |
US7632351B2 (en) * | 2005-08-08 | 2009-12-15 | E. I. Du Pont De Nemours And Company | Atomic layer deposition processes for the formation of ruthenium films, and ruthenium precursors useful in such processes |
US20070191638A1 (en) * | 2006-02-10 | 2007-08-16 | Park Kyung-Ho | Processes for the synthesis of N,N'-substituted 1,3-diketimines |
WO2008018861A1 (en) * | 2006-08-07 | 2008-02-14 | E. I. Du Pont De Nemours And Company | Copper(i) complexes and processes for deposition of copper films by atomic layer deposition |
US7488435B2 (en) | 2006-08-07 | 2009-02-10 | E. I. Du Pont De Nemours And Company | Copper(I) complexes and processes for deposition of copper films by atomic layer deposition |
US7582757B2 (en) | 2006-09-06 | 2009-09-01 | E. I. Du Pont De Nemours And Company | Electroluminescent complexes of Ir(III) and devices |
US7692222B2 (en) * | 2006-11-07 | 2010-04-06 | Raytheon Company | Atomic layer deposition in the formation of gate structures for III-V semiconductor |
US20090130466A1 (en) * | 2007-11-16 | 2009-05-21 | Air Products And Chemicals, Inc. | Deposition Of Metal Films On Diffusion Layers By Atomic Layer Deposition And Organometallic Precursor Complexes Therefor |
JP5854839B2 (en) * | 2008-11-11 | 2016-02-09 | ユニバーサル ディスプレイ コーポレイション | Phosphorescent emitter |
US8076243B2 (en) * | 2009-01-26 | 2011-12-13 | L'air Liquide Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude | Metal precursors for deposition of metal-containing films |
JP2010192738A (en) * | 2009-02-19 | 2010-09-02 | Tokyo Electron Ltd | METHOD OF FORMING Cu FILM, AND STORAGE MEDIUM |
US9121093B2 (en) | 2009-07-10 | 2015-09-01 | American Air Liquide, Inc. | Bis-ketoiminate copper precursors for deposition of copper-containing films and methods thereof |
US8692010B1 (en) | 2012-07-13 | 2014-04-08 | American Air Liquide, Inc. | Synthesis method for copper compounds |
KR101644676B1 (en) * | 2013-06-20 | 2016-08-01 | 주식회사 엘지화학 | Metal particles of core-shell structure and method for manufacturing the same |
JP6775531B2 (en) * | 2015-06-11 | 2020-10-28 | ナショナル リサーチ カウンシル オブ カナダ | Preparation of highly conductive copper film |
TW201842088A (en) | 2017-02-08 | 2018-12-01 | 加拿大國家研究委員會 | Printable molecular ink |
TW201842087A (en) | 2017-02-08 | 2018-12-01 | 加拿大國家研究委員會 | Molecular ink with improved thermal stability |
TW201842085A (en) | 2017-02-08 | 2018-12-01 | 加拿大國家研究委員會 | Silver molecular ink with low viscosity and low processing temperature |
CN116791362A (en) * | 2023-05-17 | 2023-09-22 | 邵阳阳光发品有限公司 | Antibacterial wig with excellent fracture resistance and preparation method thereof |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3594216A (en) | 1969-06-19 | 1971-07-20 | Westinghouse Electric Corp | Vapor phase deposition of metal from a metal-organic beta-ketoamine chelate |
DE4202889C2 (en) | 1992-02-01 | 1994-12-15 | Solvay Deutschland | Process for the deposition of layers containing a metal of the first transition metal series or aluminum and 1,3-diketiminato metal compounds |
US5464666A (en) | 1995-02-06 | 1995-11-07 | Air Products And Chemicals, Inc. | Process for chemical vapor codeposition of copper and aluminum alloys |
US6620956B2 (en) * | 2001-11-16 | 2003-09-16 | Applied Materials, Inc. | Nitrogen analogs of copper II β-diketonates as source reagents for semiconductor processing |
US6821891B2 (en) * | 2001-11-16 | 2004-11-23 | Applied Materials, Inc. | Atomic layer deposition of copper using a reducing gas and non-fluorinated copper precursors |
US6484666B1 (en) | 2001-11-21 | 2002-11-26 | Allied Precision Industries Inc. | Bird bath |
JP2005520053A (en) * | 2002-01-18 | 2005-07-07 | イー・アイ・デュポン・ドウ・ヌムール・アンド・カンパニー | Volatile copper (II) complexes for depositing copper thin films by atomic layer deposition |
US20050227007A1 (en) * | 2004-04-08 | 2005-10-13 | Bradley Alexander Z | Volatile copper(I) complexes for deposition of copper films by atomic layer deposition |
US20040247905A1 (en) * | 2003-04-16 | 2004-12-09 | Bradley Alexander Zak | Volatile copper(I) complexes for deposition of copper films by atomic layer deposition |
-
2003
- 2003-01-17 JP JP2004503688A patent/JP2005520053A/en active Pending
- 2003-01-17 KR KR10-2004-7011062A patent/KR20040077733A/en not_active Application Discontinuation
- 2003-01-17 US US10/346,874 patent/US6939578B2/en not_active Expired - Fee Related
- 2003-01-21 US US10/499,934 patent/US20050003075A1/en not_active Abandoned
- 2003-01-21 EP EP20030750016 patent/EP1466032A1/en not_active Withdrawn
- 2003-01-21 WO PCT/US2003/001846 patent/WO2003095701A1/en active Application Filing
- 2003-01-21 CN CNB038023024A patent/CN100360709C/en not_active Expired - Fee Related
- 2003-01-21 AU AU2003210599A patent/AU2003210599A1/en not_active Abandoned
-
2004
- 2004-12-16 US US11/013,774 patent/US7388113B2/en not_active Expired - Fee Related
- 2004-12-20 US US11/017,166 patent/US7087774B2/en not_active Expired - Fee Related
- 2004-12-20 US US11/017,147 patent/US7186835B2/en not_active Expired - Fee Related
-
2006
- 2006-06-20 US US11/472,108 patent/US7268365B2/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
CN100360709C (en) | 2008-01-09 |
US7268365B2 (en) | 2007-09-11 |
CN1617948A (en) | 2005-05-18 |
US6939578B2 (en) | 2005-09-06 |
US20050107283A1 (en) | 2005-05-19 |
WO2003095701A1 (en) | 2003-11-20 |
US7186835B2 (en) | 2007-03-06 |
US20050267305A1 (en) | 2005-12-01 |
US20030232142A1 (en) | 2003-12-18 |
JP2005520053A (en) | 2005-07-07 |
US7388113B2 (en) | 2008-06-17 |
US20050158479A1 (en) | 2005-07-21 |
AU2003210599A1 (en) | 2003-11-11 |
US20050003075A1 (en) | 2005-01-06 |
KR20040077733A (en) | 2004-09-06 |
EP1466032A1 (en) | 2004-10-13 |
US20060237718A1 (en) | 2006-10-26 |
US7087774B2 (en) | 2006-08-08 |
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Free format text: IN PCT GAZETTE 47/2003 UNDER (22) REPLACE "17 JANUARY 2003 (17.01.2003)" BY "21 JANUARY 2003 (21.01.2003)" |
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