WO2003087867A3 - Extreme ultraviolet light source - Google Patents

Extreme ultraviolet light source Download PDF

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Publication number
WO2003087867A3
WO2003087867A3 PCT/US2003/011139 US0311139W WO03087867A3 WO 2003087867 A3 WO2003087867 A3 WO 2003087867A3 US 0311139 W US0311139 W US 0311139W WO 03087867 A3 WO03087867 A3 WO 03087867A3
Authority
WO
WIPO (PCT)
Prior art keywords
watts
excess
light source
extreme ultraviolet
pulse power
Prior art date
Application number
PCT/US2003/011139
Other languages
French (fr)
Other versions
WO2003087867A2 (en
Inventor
Stephen T Melnychuk
William N Partlo
Igor V Fomenkov
I Roger Oliver
Richard M Ness
Norbert Bowering
Oleh Khodykin
Curtis L Rettig
Gerry M Blumenstock
Timothy S Dyer
Rodney D Simmons
Jerzy R Hoffman
R Mark Johnson
Original Assignee
Cymer Inc
Stephen T Melnychuk
William N Partlo
Igor V Fomenkov
I Roger Oliver
Richard M Ness
Norbert Bowering
Oleh Khodykin
Curtis L Rettig
Gerry M Blumenstock
Timothy S Dyer
Rodney D Simmons
Jerzy R Hoffman
R Mark Johnson
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US10/120,655 external-priority patent/US6744060B2/en
Priority claimed from US10/189,824 external-priority patent/US6815700B2/en
Priority claimed from US10/384,967 external-priority patent/US6904073B2/en
Application filed by Cymer Inc, Stephen T Melnychuk, William N Partlo, Igor V Fomenkov, I Roger Oliver, Richard M Ness, Norbert Bowering, Oleh Khodykin, Curtis L Rettig, Gerry M Blumenstock, Timothy S Dyer, Rodney D Simmons, Jerzy R Hoffman, R Mark Johnson filed Critical Cymer Inc
Priority to JP2003584754A priority Critical patent/JP2005522839A/en
Priority to AU2003230870A priority patent/AU2003230870A1/en
Priority to EP03723976A priority patent/EP1493039A4/en
Priority to KR1020047016139A priority patent/KR101038479B1/en
Publication of WO2003087867A2 publication Critical patent/WO2003087867A2/en
Publication of WO2003087867A3 publication Critical patent/WO2003087867A3/en

Links

Classifications

    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05G—X-RAY TECHNIQUE
    • H05G2/00—Apparatus or processes specially adapted for producing X-rays, not involving X-ray tubes, e.g. involving generation of a plasma
    • H05G2/001—X-ray radiation generated from plasma
    • H05G2/003—X-ray radiation generated from plasma being produced from a liquid or gas
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05G—X-RAY TECHNIQUE
    • H05G2/00—Apparatus or processes specially adapted for producing X-rays, not involving X-ray tubes, e.g. involving generation of a plasma
    • H05G2/001—X-ray radiation generated from plasma
    • H05G2/003—X-ray radiation generated from plasma being produced from a liquid or gas
    • H05G2/005—X-ray radiation generated from plasma being produced from a liquid or gas containing a metal as principal radiation generating component
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70008—Production of exposure light, i.e. light sources
    • G03F7/70033—Production of exposure light, i.e. light sources by plasma extreme ultraviolet [EUV] sources
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/7015—Details of optical elements
    • G03F7/70166—Capillary or channel elements, e.g. nested extreme ultraviolet [EUV] mirrors or shells, optical fibers or light guides
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/7015—Details of optical elements
    • G03F7/70175—Lamphouse reflector arrangements or collector mirrors, i.e. collecting light from solid angle upstream of the light source
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
    • G03F7/70916—Pollution mitigation, i.e. mitigating effect of contamination or debris, e.g. foil traps
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/005—Optical devices external to the laser cavity, specially adapted for lasers, e.g. for homogenisation of the beam or for manipulating laser pulses, e.g. pulse shaping
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05G—X-RAY TECHNIQUE
    • H05G2/00—Apparatus or processes specially adapted for producing X-rays, not involving X-ray tubes, e.g. involving generation of a plasma
    • H05G2/001—X-ray radiation generated from plasma
    • H05G2/008—X-ray radiation generated from plasma involving a beam of energy, e.g. laser or electron beam in the process of exciting the plasma
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/02—Arrangements for confining plasma by electric or magnetic fields; Arrangements for heating plasma
    • H05H1/04—Arrangements for confining plasma by electric or magnetic fields; Arrangements for heating plasma using magnetic fields substantially generated by the discharge in the plasma
    • H05H1/06—Longitudinal pinch devices

Abstract

A reliable, high-repetition rate, production line compatible high energy photon source wherein hot plasma containing an atomic element having an emission line within a desired extreme ultraviolet (EUV) wavelength range is produced in a vacuum chamber. The EUV light source unit is integrated directly into a lithography unit such as a stepper machine. The integrated parts may include a commentator, and a compression head of a solid-state pulse power unit and a vacuum vessel all as shown at (120). Support equipment is located in a support equipment cabinet (122), and rough vacuum pumps and high-pressure water pumps are located in a third cabinet (124). The pulse power unit provides electrical pulses having sufficient energy and electrical potential sufficient to produce the EUV light at an intermediate focus at rates in excess of 5 Watts on a continuous basis and in excess of 20 Watts on a burst basis.
PCT/US2003/011139 2002-04-10 2003-04-09 Extreme ultraviolet light source WO2003087867A2 (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2003584754A JP2005522839A (en) 2002-04-10 2003-04-09 Extreme ultraviolet light source
AU2003230870A AU2003230870A1 (en) 2002-04-10 2003-04-09 Extreme ultraviolet light source
EP03723976A EP1493039A4 (en) 2002-04-10 2003-04-09 Extreme ultraviolet light source
KR1020047016139A KR101038479B1 (en) 2002-04-10 2003-04-09 Extreme ultraviolet light source

Applications Claiming Priority (12)

Application Number Priority Date Filing Date Title
US10/120,655 US6744060B2 (en) 1997-05-12 2002-04-10 Pulse power system for extreme ultraviolet and x-ray sources
US10/120,655 2002-04-10
US10/189,824 2002-07-03
US10/189,824 US6815700B2 (en) 1997-05-12 2002-07-03 Plasma focus light source with improved pulse power system
US41980502P 2002-10-18 2002-10-18
US60/419,805 2002-10-18
US42280802P 2002-10-31 2002-10-31
US60/422,808 2002-10-31
US10/384,967 2003-03-08
US10/384,967 US6904073B2 (en) 2001-01-29 2003-03-08 High power deep ultraviolet laser with long life optics
US10/409,254 US6972421B2 (en) 2000-06-09 2003-04-08 Extreme ultraviolet light source
US10/409,254 2003-04-08

Publications (2)

Publication Number Publication Date
WO2003087867A2 WO2003087867A2 (en) 2003-10-23
WO2003087867A3 true WO2003087867A3 (en) 2003-12-18

Family

ID=29741190

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2003/011139 WO2003087867A2 (en) 2002-04-10 2003-04-09 Extreme ultraviolet light source

Country Status (6)

Country Link
US (4) US6972421B2 (en)
EP (1) EP1493039A4 (en)
JP (2) JP2005522839A (en)
KR (1) KR101038479B1 (en)
AU (1) AU2003230870A1 (en)
WO (1) WO2003087867A2 (en)

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US20080023657A1 (en) 2008-01-31
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WO2003087867A2 (en) 2003-10-23
US7642533B2 (en) 2010-01-05
US20040108473A1 (en) 2004-06-10
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JP2005522839A (en) 2005-07-28
AU2003230870A8 (en) 2003-10-27
EP1493039A2 (en) 2005-01-05
US20050230645A1 (en) 2005-10-20
AU2003230870A1 (en) 2003-10-27
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EP1493039A4 (en) 2009-11-11
US7368741B2 (en) 2008-05-06

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